Revealing molecular conformation-induced stress at embedded interfaces of organic optoelectronic devices by sum frequency generation spectroscopy

Improving both performance and stability of n-type organic semiconductors by vitamin C

Organic semiconductors (OSCs) are one of the most promising candidates for flexible, wearable and large-area electronics. However, the development of n-type OSCs has been severely held back due to the poor stability of their most candidates, that is, the intrinsically high reactivity of negatively charged polarons to oxygen and water. Here we demonstrate a general strategy based on vitamin C to stabilize n-type OSCs, remarkably improving the performance and stability of their device, for example, organic field-effect transistors. Vitamin C scavenges reactive oxygen species and inhibits their generation by sacrificial oxidation and non-sacrificial triplet quenching in a cascade process, which not only lastingly prevents molecular structure from oxidation damage but also passivates the latent electron traps to stabilize electron transport. This study presents a way to overcome the long-standing stability problem of n-type OSCs and devices.

The Surface of Colloidal Metal-Organic Framework Nanoparticles Revealed by Vibrational Sum Frequency Scattering Spectroscopy

Solvation shells strongly influence the interfacial chemistry of colloidal systems, from the activity of proteins to the colloidal stability and catalysis of nanoparticles. Despite their fundamental and practical importance, solvation shells have remained largely undetected by spectroscopy. Furthermore, their ability to assemble at complex but realistic interfaces with heterogeneous and rough surfaces remains an open question. Here, we apply vibrational sum frequency scattering spectroscopy (VSFSS), an interface-specific technique, to colloidal nanocrystals with porous metal-organic frameworks (MOFs) as a case study. Due to the porous nature of the solvent-particle boundary, MOF particles challenge conventional models of colloidal and interfacial chemistry. Their multiweek colloidal stability in the absence of conventional surface ligands suggests that stability may arise in part from solvation forces. Spectra of colloidally stable Zn(2-methylimidazolate)2 (ZIF-8) in polar solvents indicate the presence of ordered solvation shells, solvent-metal binding, and spontaneous ordering of organic bridging linkers within the MOF. These findings help explain the unexpected colloidal stability of MOF colloids, while providing a roadmap for applying VSFSS to wide-ranging colloidal nanocrystals in general.

Triphenylphosphonium-Functionalized Gold Nanorod/Zinc Oxide Core-Shell Nanocomposites for Mitochondrial-Targeted Phototherapy

Phototherapies, such as photothermal therapy (PTT) and photodynamic therapy (PDT), combined with novel all-in-one light-responsive nanocomposites have recently emerged as new therapeutic modalities for the treatment of cancer. Herein, we developed novel all-in-one triphenylphosphonium-functionalized gold nanorod/zinc oxide core-shell nanocomposites (CTPP-GNR@ZnO) for mitochondrial-targeted PTT/PDT owing to their good biocompatibility, tunable and high optical absorption, photothermal conversion efficiency, highest reactive oxygen species (ROS) generation, and high mitochondrial-targeting capability. Under laser irradiation of 780 nm, the CTPP-GNR@ZnO core-shell nanocomposites effectively produced heat in addition to generating ROS to induce cell death, implying a synergistic effect of mild PTT and PDT in combating cancer. Notably, the in vitro PTT/PDT effect of CTPP-GNR@ZnO core-shell nanocomposites exhibited effective cell ablation (95%) and induced significant intracellular ROS after the 780 nm laser irradiation for 50 min, indicating that CTPP in CTPP-GNR@ZnO core-shell nanocomposites can specifically target the mitochondria of CT-26 cells, as well as generate heat and ROS to completely kill cancer cells. Overall, this light-responsive nanocomposite-based phototherapy provides a new approach for cancer synergistic therapy.

Self-Assembled Monolayer-Based Hole-Transporting Materials for Perovskite Solar Cells

Ever since self-assembled monolayers (SAMs) were adopted as hole-transporting layers (HTL) for perovskite solar cells (PSCs), numerous SAMs for HTL have been synthesized and reported. SAMs offer several unique advantages including relatively simple synthesis, straightforward molecular engineering, effective surface modification using small amounts of molecules, and suitability for large-area device fabrication. In this review, we discuss recent developments of SAM-based hole-transporting materials (HTMs) for PSCs. Notably, in this article, SAM-based HTMs have been categorized by similarity of synthesis to provide general information for building a SAM structure. SAMs are composed of head, linker, and anchoring groups, and the selection of anchoring groups is key to design the synthetic procedure of SAM-based HTMs. In addition, the working mechanism of SAM-based HTMs has been visualized and explained to provide inspiration for finding new head and anchoring groups that have not yet been explored. Furthermore, both photovoltaic properties and device stabilities have been discussed and summarized, expanding reader's understanding of the relationship between the structure and performance of SAMs-based PSCs.

Enhancing the Uniformity of Organic Field-Effect Transistors by a Single-Crystalline Layer-Controlled Active Channel

Despite remarkable improvement in the mobility of the organic field-effect transistors (OFETs) being achieved in past decades, the uniformity in electrical performance remains ambiguous, impeding their implantation in organic integrated circuits. The coefficient of variance (CV) in mobility of reported OFETs is typically larger than 8%, which is not adequate for building medium-to-large scale integrated circuits. In this work, it is shown that utilizing single-domain molecular monolayer crystals as the active channel can largely enhance the uniformity of OFETs. Benefiting from the sole molecular layer with long-range ordering, the OFETs exhibit uniformities in both channel transport and charge injection, thereby giving rise to a high average mobility of 11.64 cm2 V-1 s-1 and CV of only 2.57%. Statistical transmission length method evaluation is conducted, covering channel length from 3 to 21 µm, channel width from 90 to 170 µm, and a total OFET number of 370. The low contact resistance of 79.00 ± 7.00 Ω cm and high intrinsic mobility of 12.36 ± 0.45 cm2 V-1 s-1 are acquired with very high accuracy and reliability. As such, this work provides a practical way to enhance the uniformity of OFETs by a single-crystalline layer-controlled active channel toward their applications in integrated circuits.

Recent Advances in Field Effect Transistor Biosensors: Designing Strategies and Applications for Sensitive Assay

In comparison with traditional clinical diagnosis methods, field-effect transistor (FET)-based biosensors have the advantages of fast response, easy miniaturization and integration for high-throughput screening, which demonstrates their great technical potential in the biomarker detection platform. This mini review mainly summarizes recent advances in FET biosensors. Firstly, the review gives an overview of the design strategies of biosensors for sensitive assay, including the structures of devices, functionalization methods and semiconductor materials used. Having established this background, the review then focuses on the following aspects: immunoassay based on a single biosensor for disease diagnosis; the efficient integration of FET biosensors into a large-area array, where multiplexing provides valuable insights for high-throughput testing options; and the integration of FET biosensors into microfluidics, which contributes to the rapid development of lab-on-chip (LOC) sensing platforms and the integration of biosensors with other types of sensors for multifunctional applications. Finally, we summarize the long-term prospects for the commercialization of FET sensing systems.

Determination of protein conformation and orientation at buried solid/liquid interfaces

Protein structures at solid/liquid interfaces mediate interfacial protein functions, which are important for many applications. It is difficult to probe interfacial protein structures at buried solid/liquid interfaces in situ at the molecular level. Here, a systematic methodology to determine protein molecular structures (orientation and conformation) at buried solid/liquid interfaces in situ was successfully developed with a combined approach using a nonlinear optical spectroscopic technique - sum frequency generation (SFG) vibrational spectroscopy, isotope labeling, spectra calculation, and computer simulation. With this approach, molecular structures of protein GB1 and its mutant (with two amino acids mutated) were investigated at the polymer/solution interface. Markedly different orientations and similar (but not identical) conformations of the wild-type protein GB1 and its mutant at the interface were detected, due to the varied molecular interfacial interactions. This systematic strategy is general and can be widely used to elucidate protein structures at buried interfaces in situ.

Charge Transport Manipulation via Interface Doping: Achieving Ultrasensitive Organic Semiconductor Gas Sensors

Organic semiconductor (OSC) gas sensors are receiving tremendous attention with the rise of wearable devices. Due to the complicated charge transport characteristics of OSCs, it is usually difficult to optimize their gas sensitivity by directly tailoring the original signals, as in many other kinds of sensors. Instead, device engineering strategies are frequently centered on enhancing the gas-film interaction. Herein, by introducing interface doping between self-assembled monolayers and triisopropylsilylethynyl-substituted pentacene films, we report a wide tuning of OSC gas sensitivity via charge transport manipulation and achieve an ultrahigh sensitivity of nearly 2000%/ppm to NO₂, simultaneously resulting in a fast square-wave-like response feature. In addition, this sensor demonstrates good humidity stability and operates well in flexible devices. More importantly, we identify that charge transport manipulation tailors the gas sensibility of OSCs by means of electronic structure instead of original signal values: compared to shallow traps, the presence of proper deep traps is conducive to gaining high sensitivity and ultrafast response/recovery speeds. This approach is also effective for tuning the sensitivity to reductive gases, verifying its generality for promoting the performance of OSC gas sensors, as well as a promising strategy for other types of sensors or detectors.

Organic Phase-Change Memory Transistor Based on an Organic Semiconductor with Reversible Molecular Conformation Transition

Phase-change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase-changeable and high-mobility organic semiconductor (3,6-DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6-DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high-performance organic phase-change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications.

A Sub-20 nm Organic/Inorganic Hybrid Dielectric for Ultralow-Power Organic Thin-Film Transistor (OTFT) With Enhanced Operational Stability

Organic/inorganic hybrid materials are utilized extensively as gate dielectric layers in organic thin-film transistors (OTFTs). However, inherently low dielectric constant of organic materials and lack of a reliable deposition process for organic layers hamper the broad application of hybrid dielectric materials. Here, a universal strategy to synthesize high-k hybrid dielectric materials by incorporating a high-k polymer layer on top of various inorganic layers generated by different fabrication methods, including AlO_x and HfO_x , is presented. Those hybrid dielectrics commonly exhibit high capacitance (>300 nF·cm^-2 ) as well as excellent insulating properties. A vapor-phase deposition method is employed for precise control of the polymer film thickness. The ultralow-voltage (<3 V) OTFTs are demonstrated based on the hybrid dielectric layer with 100% yield and uniform electrical characteristics. Moreover, the exceptionally high stability of OTFTs for long-term operation (current change less than 5% even under 30 h of voltage stress at 2.0 MV·cm^-1 ) is achieved. The hybrid dielectric is fully compatible with various substrates, which allows for the demonstration of intrinsically flexible OTFTs on the plastic substrate. It is believed that this approach for fabricating hybrid dielectrics by introducing the high-k organic material can be a promising strategy for future low-power, flexible electronics.

Balancing the film strain of organic semiconductors for ultrastable organic transistors with a five-year lifetime

The instability of organic field-effect transistors (OFETs) is one key obstacle to practical application and is closely related to the unstable aggregate state of organic semiconductors (OSCs). However, the underlying reason for this instability remains unclear, and no effective solution has been developed. Herein, we find that the intrinsic tensile and compressive strains that exist in OSC films are the key origins for aggregate state instability and device degradation. We further report a strain balance strategy to stabilize the aggregate state by regulating film thickness, which is based on the unique transition from tensile strain to compressive strain with increasing film thickness. Consequently, a strain-free and ultrastable OSC film is obtained by regulating the film thickness, with which an ultrastable OFET with a five-year lifetime is realized. This work provides a deeper understanding of and a solution to the instability of OFETs and sheds light on their industrialization.

Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics

Scarcity of the antisolvent polymer dielectrics and their poor stability have significantly prevented solution-processed ultraflexible organic transistors from low-temperature, large-scale production for applications in low-cost skin-inspired electronics. Here, we present a novel low-temperature solution-processed PEI-EP polymer dielectric with dramatically enhanced thermal stability, humidity stability, and frequency stability compared with the conventional PVA/c-PVA and c-PVP dielectrics, by incorporating polyethyleneimine PEI as crosslinking sites in nonhydroxyl epoxy EP. The PEI-EP dielectric requires a very low process temperature as low as 70°C and simultaneously possesses the high initial decomposition temperature (340°C) and glass transition temperature (230°C), humidity-resistant dielectric properties, and frequency-independent capacitance. Integrated into the solution-processed C8-BTBT thin-film transistors, the PEI-EP dielectric enables the device stable operation in air within 2 months and in high-humidity environment from 20 to 100% without significant performance degradation. The PEI-EP dielectric transistor array also presents weak hysteresis transfer characteristics, excellent electrical performance with 100% operation rate, high mobility up to 7.98 cm² V^-1 s^-1 (1 Hz) and average mobility as high as 5.3 cm² V^-1 s^-1 (1 Hz), excellent flexibility with the normal operation at the bending radius down to 0.003 mm, and foldable and crumpling-resistant capability. These results reveal the great potential of PEI-EP polymer as dielectric of low-temperature solution-processed ultraflexible organic transistors and open a new strategy for the development and applications of next-generation low-cost skin electronics.