1
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Lebedev D, Gish JT, Garvey ES, Song TW, Zhou Q, Wang L, Watanabe K, Taniguchi T, Chan MK, Darancet P, Stern NP, Sangwan VK, Hersam MC. Photocurrent Spectroscopy of Dark Magnetic Excitons in 2D Multiferroic NiI 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2407862. [PMID: 39120494 PMCID: PMC11481216 DOI: 10.1002/advs.202407862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2024] [Indexed: 08/10/2024]
Abstract
Two-dimensional (2D) antiferromagnetic (AFM) semiconductors are promising components of opto-spintronic devices due to terahertz operation frequencies and minimal interactions with stray fields. However, the lack of net magnetization significantly limits the number of experimental techniques available to study the relationship between magnetic order and semiconducting properties. Here, they demonstrate conditions under which photocurrent spectroscopy can be employed to study many-body magnetic excitons in the 2D AFM semiconductor NiI2. The use of photocurrent spectroscopy enables the detection of optically dark magnetic excitons down to bilayer thickness, revealing a high degree of linear polarization that is coupled to the underlying helical AFM order of NiI2. In addition to probing the coupling between magnetic order and dark excitons, this work provides strong evidence for the multiferroicity of NiI2 down to bilayer thickness, thus demonstrating the utility of photocurrent spectroscopy for revealing subtle opto-spintronic phenomena in the atomically thin limit.
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Affiliation(s)
- Dmitry Lebedev
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - J. Tyler Gish
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - Ethan S. Garvey
- Department of Physics and AstronomyNorthwestern UniversityEvanstonIL60208USA
| | - Thomas W. Song
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - Qunfei Zhou
- Center for Nanoscale MaterialsArgonne National Laboratory9700 South Cass AvenueLemontIL60439USA
- Northwestern‐Argonne Institute of Science and Engineering2205 Tech DriveEvanstonIL60208USA
| | - Luqing Wang
- Center for Nanoscale MaterialsArgonne National Laboratory9700 South Cass AvenueLemontIL60439USA
- Northwestern‐Argonne Institute of Science and Engineering2205 Tech DriveEvanstonIL60208USA
| | - Kenji Watanabe
- Research Center for Functional MaterialsNational Institute for Materials Science1‐1 NamikiTsukuba305‐0044Japan
| | - Takashi Taniguchi
- International Center for Materials NanoarchitectonicsNational Institute for Materials Science1‐1 NamikiTsukuba305‐0044Japan
| | - Maria K. Chan
- Center for Nanoscale MaterialsArgonne National Laboratory9700 South Cass AvenueLemontIL60439USA
- Northwestern‐Argonne Institute of Science and Engineering2205 Tech DriveEvanstonIL60208USA
| | - Pierre Darancet
- Center for Nanoscale MaterialsArgonne National Laboratory9700 South Cass AvenueLemontIL60439USA
- Northwestern‐Argonne Institute of Science and Engineering2205 Tech DriveEvanstonIL60208USA
| | - Nathaniel P. Stern
- Department of Physics and AstronomyNorthwestern UniversityEvanstonIL60208USA
| | - Vinod K. Sangwan
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - Mark C. Hersam
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
- Department of ChemistryNorthwestern UniversityEvanstonIL60208USA
- Department of Electrical and Computer EngineeringNorthwestern UniversityEvanstonIL60208USA
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2
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Chen J, Cheng Z, Chen J, Li M, Jia X, Ran Y, Zhang Y, Li Y, Yu T, Dai L. Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe 2-CrI 3 p-n Heterojunction. ACS NANO 2024. [PMID: 39267593 DOI: 10.1021/acsnano.4c08185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/17/2024]
Abstract
Two-dimensional (2D) magnetic semiconductors offer an intriguing platform for investigating magneto-optoelectronic properties and hold immense potential in developing prospective devices when they are combined with valley electronic materials like 2D transition-metal dichalcogenides. Herein, we report various magneto-optoelectronic response features of the vertical hBN-FLG-CrI3-WSe2-FLG-hBN van der Waals heterostructure. Through a sensible layout and exquisite manipulation, an hBN-FLG-CrI3-FLG-hBN heterostructure was also fabricated on identical CrI3 and FLGs for better comparison. Our results show that the WSe2-CrI3 heterostructure, acting as a p-n heterojunction, has advantageous capability in light detection, especially in self-powered light helicity detecting. In the WSe2-CrI3 heterojunction, the absolute value of photocurrent IPH exhibits obvious asymmetry with respect to the bias V, with the IPH of reversely biased WSe2-CrI3 p-n heterojunction being larger. When the CrI3 is fully spin-polarized under a 3 T magnetic field, the reversely biased WSe2-CrI3 heterojunction exhibits advantageous capability in light helicity detecting. Both the short-circuit currents ISC and IPH show one-cycle fluctuation behaviors when the quarter-wave plate rotates 180°, and the corresponding photoresponsivity helicities can be as high as 18.0% and 20.1%, respectively. We attribute the spin-enhanced photovoltaic effect in the WSe2-CrI3 heterojunction and its contribution to circularly polarized light detection to the coordination function of the spin-filter CrI3, the valley electronic monolayer WSe2, and the spin-dependent charge transfer between them. Our work helps us understand the interplay between the magnetic and optoelectronic properties of WSe2-CrI3 heterojunctions and promotes the developing progress of prospective 2D spin optoelectronic devices.
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Affiliation(s)
- Jiamin Chen
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Zhixuan Cheng
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Jiahao Chen
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Minglai Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Xionghui Jia
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Yuqia Ran
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yi Zhang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Yanping Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Tongjun Yu
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China
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3
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Du L, Huang Z, Zhang J, Ye F, Dai Q, Deng H, Zhang G, Sun Z. Nonlinear physics of moiré superlattices. NATURE MATERIALS 2024; 23:1179-1192. [PMID: 39215154 DOI: 10.1038/s41563-024-01951-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 06/13/2024] [Indexed: 09/04/2024]
Abstract
Nonlinear physics is one of the most important research fields in modern physics and materials science. It offers an unprecedented paradigm for exploring many fascinating physical phenomena and realizing diverse cutting-edge applications inconceivable in the framework of linear processes. Here we review the recent theoretical and experimental progress concerning the nonlinear physics of synthetic quantum moiré superlattices. We focus on the emerging nonlinear electronic, optical and optoelectronic properties of moiré superlattices, including but not limited to the nonlinear anomalous Hall effect, dynamically twistable harmonic generation, nonlinear optical chirality, ultralow-power-threshold optical solitons and spontaneous photogalvanic effect. We also present our perspectives on the future opportunities and challenges in this rapidly progressing field, and highlight the implications for advances in both fundamental physics and technological innovations.
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Affiliation(s)
- Luojun Du
- Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Jin Zhang
- QTF Centre of Excellence, Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Fangwei Ye
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
| | - Hui Deng
- Physics Department, University of Michigan, Ann Arbor, MI, USA
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
- Songshan-Lake Materials Laboratory, Dongguan, China.
| | - Zhipei Sun
- QTF Centre of Excellence, Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland.
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Wang H, Yang L. Manipulating Photogalvanic Effects in Two-Dimensional Multiferroic Breathing Kagome Materials. J Phys Chem Lett 2024; 15:8689-8696. [PMID: 39159421 DOI: 10.1021/acs.jpclett.4c01844] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
Multiferroic materials, known for their multiple tunable orders, present an exceptional opportunity to manipulate nonlinear optical responses that are sensitive to symmetry. In this study, we propose leveraging electric and magnetic fields to selectively control and switch specific types of photogalvanic effects in two-dimensional multiferroic breathing kagome materials. Taking monolayer Nb3I8 as an example, we demonstrate that the shift current, characterized by the real-space shift of electrons and holes, is predominantly unaffected by magnetic order. In contrast, injection current, featured by quantum metric dipole in momentum space, is closely related to valley polarization, which can be controlled by a magnetic field. Furthermore, both photocurrents can be reversed by an out-of-plane electric field via lattice breathing. Our findings reveal the potential of multiferroic breathing kagome structures for multifunctional optoelectronic applications and sensors.
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Affiliation(s)
- Haonan Wang
- Department of Physics, Washington University, St. Louis, Missouri 63130, United States
| | - Li Yang
- Department of Physics, Washington University, St. Louis, Missouri 63130, United States
- Department of Physics and Institute of Materials Science and Engineering, Washington University, St. Louis, Missouri 63130, United States
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5
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Zhu W, Sun J, Wang Y, Li Y, Bai H, Wang Q, Han L, Zhang Q, Wu H, Song C, Pan F. Room-Temperature Magneto-Photoresponse in All-2D Optoelectronic Devices for In-Sensor Vision Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403624. [PMID: 39129355 DOI: 10.1002/adma.202403624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 07/22/2024] [Indexed: 08/13/2024]
Abstract
Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto-photoresponse. It enriches the application scenarios and shows potential to construct in-sensor vision systems for artificial intelligence with gate-free architecture. However, achieving a simultaneous existence of room-temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room-temperature magneto-photoresponse is accomplished in all-2D optoelectronic devices, employing 2D ferromagnet Fe3GaTe2 as the source and drain, with WSe2 forming the channel. The interplay between room-temperature magnetism and photoelectric properties is realized by introducing the unique magneto-band structure effect from 2D interface, resulting in magneto-tunable charge transfer between Fe3GaTe2 and WSe2. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto-photoresponse, traditional gate-controlled phototransistors are replaced and a prototype in-sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low-contrast environments is established. These findings pave a way for achieving high-temperature magneto-photoresponse, thereby guiding the construction of robust in-sensor vision systems toward high performance and broad applications.
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Affiliation(s)
- Wenxuan Zhu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Jiacheng Sun
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Yuyan Wang
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Yuankun Li
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Hua Bai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Qingtian Zhang
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Huaqiang Wu
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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6
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Watanabe H, Yanase Y. Magnetic parity violation and parity-time-reversal-symmetric magnets. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:373001. [PMID: 38899401 DOI: 10.1088/1361-648x/ad52dd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Accepted: 05/31/2024] [Indexed: 06/21/2024]
Abstract
Parity-time-reversal symmetry (PTsymmetry), a symmetry for the combined operations of space inversion (P) and time reversal (T), is a fundamental concept of physics and characterizes the functionality of materials as well asPandTsymmetries. In particular, thePT-symmetric systems can be found in the centrosymmetric crystals undergoing the parity-violating magnetic order which we call the odd-parity magnetic multipole order. While this spontaneous order leavesPTsymmetry intact, the simultaneous violation ofPandTsymmetries gives rise to various emergent responses that are qualitatively different from those allowed by the nonmagneticP-symmetry breaking or by the ferromagnetic order. In this review, we introduce candidates hosting the intriguing spontaneous order and overview the characteristic physical responses. Various off-diagonal and/or nonreciprocal responses are identified, which are closely related to the unusual electronic structures such as hidden spin-momentum locking and asymmetric band dispersion.
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Affiliation(s)
- Hikaru Watanabe
- Research Center for Advanced Science and Technology, University of Tokyo, Meguro-ku, Tokyo 153-8904, Japan
| | - Youichi Yanase
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
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7
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Yang B, Patel T, Cheng M, Pichugin K, Tian L, Sherlekar N, Yan S, Fu Y, Tian S, Lei H, Reimer ME, Okamoto J, Tsen AW. Macroscopic tunneling probe of Moiré spin textures in twisted CrI 3. Nat Commun 2024; 15:4982. [PMID: 38862504 PMCID: PMC11167019 DOI: 10.1038/s41467-024-49261-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2024] [Accepted: 05/30/2024] [Indexed: 06/13/2024] Open
Abstract
Various noncollinear spin textures and magnetic phases have been predicted in twisted two-dimensional CrI3 due to competing ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange from moiré stacking-with potential spintronic applications even when the underlying material possesses a negligible Dzyaloshinskii-Moriya or dipole-dipole interaction. Recent measurements have shown evidence of coexisting FM and AFM layer order in small-twist-angle CrI3 bilayers and double bilayers. Yet, the nature of the magnetic textures remains unresolved and possibilities for their manipulation and electrical readout are unexplored. Here, we use tunneling magnetoresistance to investigate the collective spin states of twisted double-bilayer CrI3 under both out-of-plane and in-plane magnetic fields together with detailed micromagnetic simulations of domain dynamics based on magnetic circular dichroism. Our results capture hysteretic and anisotropic field evolutions of the magnetic states and we further uncover two distinct non-volatile spin textures (out-of-plane and in-plane domains) at ≈1° twist angle, with a different global tunneling resistance that can be switched by magnetic field.
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Affiliation(s)
- Bowen Yang
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Physics and Astronomy, University of Waterloo, Waterloo, ON, Canada
| | - Tarun Patel
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Physics and Astronomy, University of Waterloo, Waterloo, ON, Canada
| | - Meixin Cheng
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Chemistry, University of Waterloo, Waterloo, ON, Canada
| | | | - Lin Tian
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Canada
| | - Nachiket Sherlekar
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Physics and Astronomy, University of Waterloo, Waterloo, ON, Canada
| | - Shaohua Yan
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
| | - Yang Fu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
| | - Shangjie Tian
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
- School of Materials Science and Engineering, Anhui University, Hefei, China
| | - Hechang Lei
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
| | - Michael E Reimer
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Canada
| | - Junichi Okamoto
- Institute of Physics, University of Freiburg, Freiburg, Germany
- EUCOR Centre for Quantum Science and Quantum Computing, University of Freiburg, Freiburg, Germany
| | - Adam W Tsen
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada.
- Department of Chemistry, University of Waterloo, Waterloo, ON, Canada.
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8
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Aoki S, Dong Y, Wang Z, Huang XSW, Itahashi YM, Ogawa N, Ideue T, Iwasa Y. Giant Modulation of the Second Harmonic Generation by Magnetoelectricity in Two-Dimensional Multiferroic CuCrP 2S 6. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312781. [PMID: 38533684 DOI: 10.1002/adma.202312781] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 03/22/2024] [Indexed: 03/28/2024]
Abstract
Multiferroic materials have attracted considerable attention owing to their unique magnetoelectric or magnetooptical properties. The recent discovery of few-layer van der Waals multiferroic crystals provides a new research direction for controlling the multiferroic properties in the atomic layer limit. However, research on few-layer multiferroic crystals is limited and the effect of thickness-dependent symmetries on those properties is less explored. In this study, the symmetries and magnetoelectric responses of van der Waals multiferroic CuCrP2S6 are investigated by optical second harmonic generation (SHG). Structural and magnetic phase transitions are successfully probed by the temperature-dependent SHG signals, revealing significant changes by applying the magnetic field reflecting the magnetoelectric effect. Moreover, it is found that symmetries and resultant magnetoelectric responses can be modulated by the number of layers. These results offer a new principle of controlling the multiferroicity and indicate that 2D van der Waals multiferroic material is a promising building block for functional nanodevices.
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Affiliation(s)
- Shunta Aoki
- Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Yu Dong
- Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Ziqian Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Xiang S W Huang
- Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Yuki M Itahashi
- Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Naoki Ogawa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Toshiya Ideue
- Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
- The Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, 277-8581, Japan
| | - Yoshihiro Iwasa
- Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
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9
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Guo L, Hu S, Gu X, Zhang R, Wang K, Yan W, Sun X. Emerging Spintronic Materials and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301854. [PMID: 37309258 DOI: 10.1002/adma.202301854] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 06/01/2023] [Indexed: 06/14/2023]
Abstract
The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.
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Affiliation(s)
- Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Shunhua Hu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xianrong Gu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Rui Zhang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Wenjing Yan
- School of Physics and Astronomy, University of Nottingham, University Park, Nottingham, NG9 2RD, UK
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Material Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
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10
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Fang N, Wu C, Zhang Y, Li Z, Zhou Z. Perspectives: Light Control of Magnetism and Device Development. ACS NANO 2024; 18:8600-8625. [PMID: 38469753 DOI: 10.1021/acsnano.3c13002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.
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Affiliation(s)
- Ning Fang
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
| | - Changqing Wu
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Yuzhe Zhang
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Zhongyu Li
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Ziyao Zhou
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
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11
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Liu X, Wang H, Chen Z, Zhu W, Li Z, Hu W, Xiao H, Zeng XC. Enhanced Direct Exchange Interaction and Hybridization by Single-Atom Linkers for High Curie Temperature and Superior Visible-Light Harvesting in Cr 3(CN 3) 2. NANO LETTERS 2024; 24:35-42. [PMID: 38117034 DOI: 10.1021/acs.nanolett.3c03044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Designing two-dimensional (2D) ferromagnetic (FM) semiconductors with elevated Curie temperature, high carrier mobility, and strong light harvesting is challenging but crucial to the development of spintronics with multifunctionalities. Herein, we show first-principles computation evidence of the 2D metal-organic framework Kagome ferromagnet Cr3(CN3)2. Monolayer Cr3(CN3)2 is predicted to be an FM semiconductor with a record-high Curie temperature of 943 K owing to the use of a single-atom linker (N), which results in strong direct d-p exchange interaction and hybridization between dyz/xz and pz of Cr and N, as well as excellent matching characteristics in energy and symmetry. The single-atom linker structural feature also leads to notable band dispersion and a relatively high carrier mobility of 420 cm2 V-1 s-1. Moreover, under the in-plane strain, 2D Cr3(CN3)2 can be tuned to possess a strong visible-light-harvesting functionality. These novel properties render monolayer Cr3(CN3)2 a distinct 2D ferromagnet with high potential for the development of multifunctional spintronics.
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Affiliation(s)
- Xiaofeng Liu
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Haidi Wang
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Zhao Chen
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Weiduo Zhu
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Zhongjun Li
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Wei Hu
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Haixiao Xiao
- School of Physics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Xiao Cheng Zeng
- Department of Materials Science & Engineering, City University of Hong Kong, Hong Kong 999077, People's Republic of China
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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13
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Duan S, Qin F, Chen P, Yang X, Qiu C, Huang J, Liu G, Li Z, Bi X, Meng F, Xi X, Yao J, Ideue T, Lian B, Iwasa Y, Yuan H. Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces. NATURE NANOTECHNOLOGY 2023; 18:867-874. [PMID: 37322146 DOI: 10.1038/s41565-023-01417-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 05/14/2023] [Indexed: 06/17/2023]
Abstract
The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The theoretical rationale is that the BCD can be generated at certain symmetry-mismatched van der Waals heterointerfaces even though each material has no BCD in its band structure. However, experimental confirmation of such a BCD induced via breaking of the interfacial symmetry remains elusive. Here we demonstrate a universal strategy for BCD generation and observe BCD-induced gate-tunable spin-polarized photocurrent at WSe2/SiP interfaces. Although the rotational symmetry of each material prohibits the generation of spin photocurrent under normal incidence of light, we surprisingly observe a direction-selective spin photocurrent at the WSe2/SiP heterointerface with a twist angle of 0°, whose amplitude is electrically tunable with the BCD magnitude. Our results highlight a BCD-spin-valley correlation and provide a universal approach for engineering the geometric features of twisted heterointerfaces.
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Affiliation(s)
- Siyu Duan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xupeng Yang
- Institute of Physics, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Gan Liu
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fanhao Meng
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
| | - Jie Yao
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Toshiya Ideue
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, Japan.
- Institute for Solid State Physics, The University of Tokyo, Chiba, Japan.
| | - Biao Lian
- Department of Physics, Princeton University, Princeton, NJ, USA.
| | - Yoshihiro Iwasa
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- RIKEN Center for Emergent Matter Science, Wako, Japan
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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14
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Jiang J, Mi W. Two-dimensional magnetic Janus monolayers and their van der Waals heterostructures: a review on recent progress. MATERIALS HORIZONS 2023; 10:788-807. [PMID: 36594899 DOI: 10.1039/d2mh01362b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
A magnetic Janus monolayer, a special type of material which has asymmetric arrangements of its surface at the nanoscale, has been shown to present rather exotic properties for applications in spintronics and its intersections. This review aims to offer a comprehensive review of the emergent physical properties of magnetic Janus monolayers and their van der Waals heterostructures from a theoretical point of view. The review starts by introducing the theoretical methodologies composed of the state-of-the-art methods and the challenges and limitations in validations for the descriptions of the magnetic ground states and thermodynamic properties in magnetic materials. The built-in polarization field induced physical phenomena of magnetic Janus monolayers are then presented. The tunable electronic and magnetic properties of magnetic Janus monolayer-based van der Waals heterostructures are discussed. Finally, the conclusions and future challenges in this field are prospected. This review serves as a complete summary of the two-dimensional magnetic Janus library and emergent electronic and magnetic properties in magnetic Janus monolayers and their heterostructures, and provides guidelines for the design of electronic and spintronic devices based on Janus materials.
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Affiliation(s)
- Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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15
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All-optical control of spin in a 2D van der Waals magnet. Nat Commun 2022; 13:5976. [PMID: 36216796 PMCID: PMC9551086 DOI: 10.1038/s41467-022-33343-4] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2022] [Accepted: 09/13/2022] [Indexed: 11/25/2022] Open
Abstract
Two-dimensional (2D) van der Waals magnets provide new opportunities for control of magnetism at the nanometre scale via mechanisms such as strain, voltage and the photovoltaic effect. Ultrafast laser pulses promise the fastest and most energy efficient means of manipulating electron spin and can be utilized for information storage. However, little is known about how laser pulses influence the spins in 2D magnets. Here we demonstrate laser-induced magnetic domain formation and all-optical switching in the recently discovered 2D van der Waals ferromagnet CrI3. While the magnetism of bare CrI3 layers can be manipulated with single laser pulses through thermal demagnetization processes, all-optical switching is achieved in nanostructures that combine ultrathin CrI3 with a monolayer of WSe2. The out-of-plane magnetization is switched with multiple femtosecond pulses of either circular or linear polarization, while single pulses result in less reproducible and partial switching. Our results imply that spin-dependent interfacial charge transfer between the WSe2 and CrI3 is the underpinning mechanism for the switching, paving the way towards ultrafast optical control of 2D van der Waals magnets for future photomagnetic recording and device technology. The use of light in driving the magnetization of materials has great technological potential, as well as allowing for insights into the fast dynamics of magnetic systems. Here, the authors combine CrI3, a van der Waals magnet, with WSe2, and demonstrate all optical switching of the resulting heterostructure.
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