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Delord T, Monge R, Meriles CA. Correlated Spectroscopy of Electric Noise with Color Center Clusters. NANO LETTERS 2024; 24:6474-6479. [PMID: 38767585 PMCID: PMC11157654 DOI: 10.1021/acs.nanolett.4c00222] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 05/11/2024] [Accepted: 05/13/2024] [Indexed: 05/22/2024]
Abstract
Experimental noise often contains information about the interactions of a system with its environment, but establishing a relation between the measured time fluctuations and the underlying physical observables is rarely apparent. Here, we leverage a multidimensional and multisensor analysis of spectral diffusion to investigate the dynamics of trapped carriers near subdiffraction clusters of nitrogen-vacancy (NV) centers in diamond. We establish statistical correlations in the spectral fluctuations we measure as we recursively probe the cluster optical resonances, which we then exploit to reveal proximal traps. Further, we deterministically induce Stark shifts in the cluster spectrum, ultimately allowing us to pinpoint the relative three-dimensional positions of interacting NVs as well as the location and charge sign of surrounding traps. Our results can be generalized to other color centers and provide opportunities for the characterization of photocarrier dynamics in semiconductors and the manipulation of nanoscale spin-qubit clusters connected via electric fields.
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Affiliation(s)
- Tom Delord
- Department
of Physics, CUNY-City College of New York, New York, New York 10031, United States
| | - Richard Monge
- Department
of Physics, CUNY-City College of New York, New York, New York 10031, United States
| | - Carlos A. Meriles
- Department
of Physics, CUNY-City College of New York, New York, New York 10031, United States
- CUNY-Graduate
Center, New York, New York 10016, United States
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2
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Rieger M, Villafañe V, Todenhagen LM, Matthies S, Appel S, Brandt MS, Müller K, Finley JJ. Fast optoelectronic charge state conversion of silicon vacancies in diamond. SCIENCE ADVANCES 2024; 10:eadl4265. [PMID: 38381816 PMCID: PMC10881026 DOI: 10.1126/sciadv.adl4265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 01/19/2024] [Indexed: 02/23/2024]
Abstract
Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications in photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multiqubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photocurrent spectroscopy. We controllably convert the charge state between the optically active SiV- and dark SiV2- with megahertz rates and >90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV- photoluminescence under hole capture, measure the intrinsic conversion time from the dark SiV2- to the bright SiV- to be 36.4(67) ms, and demonstrate how it can be enhanced by a factor of 105 via optical pumping. Moreover, we obtain previously unknown information on the defects that contribute to photoconductivity, indicating the presence of substitutional nitrogen and divacancies.
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Affiliation(s)
- Manuel Rieger
- Walter Schottky Institute, School of Natural Sciences and MCQST, Technical University of Munich, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institute, School of Natural Sciences and MCQST, Technical University of Munich, 85748 Garching, Germany
- Walter Schottky Institute, School of Computation, Information and Technology and MCQST, Technical University of Munich, 85748 Garching, Germany
| | - Lina M. Todenhagen
- Walter Schottky Institute, School of Natural Sciences and MCQST, Technical University of Munich, 85748 Garching, Germany
| | - Stephan Matthies
- Walter Schottky Institute, School of Computation, Information and Technology and MCQST, Technical University of Munich, 85748 Garching, Germany
| | - Stefan Appel
- Walter Schottky Institute, School of Computation, Information and Technology and MCQST, Technical University of Munich, 85748 Garching, Germany
| | - Martin S. Brandt
- Walter Schottky Institute, School of Natural Sciences and MCQST, Technical University of Munich, 85748 Garching, Germany
| | - Kai Müller
- Walter Schottky Institute, School of Computation, Information and Technology and MCQST, Technical University of Munich, 85748 Garching, Germany
| | - Jonathan J. Finley
- Walter Schottky Institute, School of Natural Sciences and MCQST, Technical University of Munich, 85748 Garching, Germany
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3
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Monge R, Delord T, Meriles CA. Reversible optical data storage below the diffraction limit. NATURE NANOTECHNOLOGY 2024; 19:202-207. [PMID: 38049596 DOI: 10.1038/s41565-023-01542-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 09/18/2023] [Indexed: 12/06/2023]
Abstract
Colour centres in wide-bandgap semiconductors feature metastable charge states that can be interconverted with the help of optical excitation at select wavelengths. The distinct fluorescence and spin properties in each of these states have been exploited to show storage of classical information in three dimensions, but the memory capacity of these platforms has been thus far limited by optical diffraction. Here we leverage local heterogeneity in the optical transitions of colour centres in diamond (nitrogen vacancies) to demonstrate selective charge state control of individual point defects sharing the same diffraction-limited volume. Further, we apply this approach to dense colour centre ensembles, and show rewritable, multiplexed data storage with an areal density of 21 Gb inch-2 at cryogenic temperatures. These results highlight the advantages for developing alternative optical storage device concepts that can lead to increased storage capacity and reduced energy consumption per operation.
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Affiliation(s)
- Richard Monge
- Department of Physics, City College of New York, CUNY, New York, NY, USA
- Graduate Center, CUNY, New York, NY, USA
| | - Tom Delord
- Department of Physics, City College of New York, CUNY, New York, NY, USA
| | - Carlos A Meriles
- Department of Physics, City College of New York, CUNY, New York, NY, USA.
- Graduate Center, CUNY, New York, NY, USA.
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4
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Wang G, Li C, Tang H, Li B, Madonini F, Alsallom FF, Calvin Sun WK, Peng P, Villa F, Li J, Cappellaro P. Manipulating solid-state spin concentration through charge transport. Proc Natl Acad Sci U S A 2023; 120:e2305621120. [PMID: 37527342 PMCID: PMC10410760 DOI: 10.1073/pnas.2305621120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/06/2023] [Accepted: 06/30/2023] [Indexed: 08/03/2023] Open
Abstract
Solid-state defects are attractive platforms for quantum sensing and simulation, e.g., in exploring many-body physics and quantum hydrodynamics. However, many interesting properties can be revealed only upon changes in the density of defects, which instead is usually fixed in material systems. Increasing the interaction strength by creating denser defect ensembles also brings more decoherence. Ideally one would like to control the spin concentration at will while keeping fixed decoherence effects. Here, we show that by exploiting charge transport, we can take some steps in this direction, while at the same time characterizing charge transport and its capture by defects. By exploiting the cycling process of ionization and recombination of NV centers in diamond, we pump electrons from the valence band to the conduction band. These charges are then transported to modulate the spin concentration by changing the charge state of material defects. By developing a wide-field imaging setup integrated with a fast single photon detector array, we achieve a direct and efficient characterization of the charge redistribution process by measuring the complete spectrum of the spin bath with micrometer-scale spatial resolution. We demonstrate a two-fold concentration increase of the dominant spin defects while keeping the T2 of the NV center relatively unchanged, which also provides a potential experimental demonstration of the suppression of spin flip-flops via hyperfine interactions. Our work paves the way to studying many-body dynamics with temporally and spatially tunable interaction strengths in hybrid charge-spin systems.
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Affiliation(s)
- Guoqing Wang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Changhao Li
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Hao Tang
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Boning Li
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Francesca Madonini
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano20133, Italy
| | - Faisal F. Alsallom
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Won Kyu Calvin Sun
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Pai Peng
- Department of Electrical Engineering, Princeton University, Princeton, NJ08544
| | - Federica Villa
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano20133, Italy
| | - Ju Li
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Paola Cappellaro
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA02139
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Lozovoi A, Chen Y, Vizkelethy G, Bielejec E, Flick J, Doherty MW, Meriles CA. Detection and Modeling of Hole Capture by Single Point Defects under Variable Electric Fields. NANO LETTERS 2023; 23:4495-4501. [PMID: 37141536 DOI: 10.1021/acs.nanolett.3c00860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Understanding carrier trapping in solids has proven key to semiconductor technologies, but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photogenerated holes by an individual negatively charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semiclassical Monte Carlo simulations modeling carrier trapping through a cascade process of phonon emission and obtain electric-field-dependent capture probabilities in good agreement with experiment. Because the mechanisms at play are insensitive to the characteristics of the trap, we anticipate the capture cross sections we observe─largely exceeding those derived from ensemble measurements─may also be present in materials platforms other than diamond.
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Affiliation(s)
- Artur Lozovoi
- Department. of Physics, CUNY-City College of New York, New York, New York 10031, United States
| | - YunHeng Chen
- Department of Quantum Science and Technology, Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Gyorgy Vizkelethy
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Edward Bielejec
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Johannes Flick
- Department. of Physics, CUNY-City College of New York, New York, New York 10031, United States
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States
- CUNY-Graduate Center, New York, New York 10016, United States
| | - Marcus W Doherty
- Department of Quantum Science and Technology, Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Carlos A Meriles
- Department. of Physics, CUNY-City College of New York, New York, New York 10031, United States
- CUNY-Graduate Center, New York, New York 10016, United States
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Wood A, Lozovoi A, Zhang ZH, Sharma S, López-Morales GI, Jayakumar H, de Leon NP, Meriles CA. Room-Temperature Photochromism of Silicon Vacancy Centers in CVD Diamond. NANO LETTERS 2023; 23:1017-1022. [PMID: 36668997 DOI: 10.1021/acs.nanolett.2c04514] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The silicon vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV-, and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photoluminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photogenerated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. In addition, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV- and then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.
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Affiliation(s)
- Alexander Wood
- Department. of Physics, CUNY-City College of New York, New York, New York 10031, United States
- University of Melbourne, Parkville VIC 3010, Australia
| | - Artur Lozovoi
- Department. of Physics, CUNY-City College of New York, New York, New York 10031, United States
| | - Zi-Huai Zhang
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Sachin Sharma
- Department. of Physics, CUNY-City College of New York, New York, New York 10031, United States
| | - Gabriel I López-Morales
- Department. of Physics, CUNY-City College of New York, New York, New York 10031, United States
| | - Harishankar Jayakumar
- Department. of Physics, CUNY-City College of New York, New York, New York 10031, United States
- University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Nathalie P de Leon
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Carlos A Meriles
- Department. of Physics, CUNY-City College of New York, New York, New York 10031, United States
- CUNY-Graduate Center, New York, New York 10016, United States
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