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Duan S, Zhang X, Xi Y, Liu D, Zhang X, Li C, Jiang L, Li L, Chen H, Ren X, Hu W. Solution-Processed Ultralow Voltage Organic Transistors With Sharp Switching for Adaptive Visual Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405030. [PMID: 38808576 DOI: 10.1002/adma.202405030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/26/2024] [Indexed: 05/30/2024]
Abstract
Neuromorphic visual systems can emulate biological retinal systems to perceive visual information under different levels of illumination, making them have considerable potential for future intelligent vehicles and vision automation. However, the complex circuits and high operating voltages of conventional artificial vision systems present great challenges for device integration and power consumption. Here, bioinspired synaptic transistors based on organic single crystal phototransistors are reported, which exhibit excitation and inhibition synaptic plasticity with time-varying. By manipulating the charge dynamics of the trapping centers of organic crystal-electret vertical stacks, organic transistors can operate below 1 V with record high on/off ratios close to 108 and sharp switching with a subthreshold swing of 59.8 mV dec-1. Moreover, the approach offers visual adaptation with highly localized modulation and over 98.2% recognition accuracy under different illumination levels. These bioinspired visual adaptation transistors offer great potential for simplifying the circuitry of artificial vision systems and will contribute to the development of machine vision applications.
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Affiliation(s)
- Shuming Duan
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
| | - Xianghong Zhang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
| | - Yue Xi
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Di Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
| | - Xiaotao Zhang
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Chunlei Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Liqiang Li
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
| | - Xiaochen Ren
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
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2
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Guo X, Wang D, Zhang D, Ma J, Wang X, Chen X, Tong L, Zhang X, Zhu J, Yang P, Gou S, Yue X, Sheng C, Xu Z, An Z, Qiu Z, Cong C, Zhou P, Fang Z, Bao W. Large-scale and stacked transfer of bilayers MoS 2devices on a flexible polyimide substrate. NANOTECHNOLOGY 2023; 35:045201. [PMID: 37669634 DOI: 10.1088/1361-6528/acf6c2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 09/04/2023] [Indexed: 09/07/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs), as flexible and stretchable materials, have attracted considerable attention in the field of novel flexible electronics due to their excellent mechanical, optical, and electronic properties. Among the various TMD materials, atomically thin MoS2has become the most widely used material due to its advantageous properties, such as its adjustable bandgap, excellent performance, and ease of preparation. In this work, we demonstrated the practicality of a stacked wafer-scale two-layer MoS2film obtained by transferring multiple single-layer films grown using chemical vapor deposition. The MoS2field-effect transistor cell had a top-gated device structure with a (PI) film as the substrate, which exhibited a high on/off ratio (108), large average mobility (∼8.56 cm2V-1s-1), and exceptional uniformity. Furthermore, a range of flexible integrated logic devices, including inverters, NOR gates, and NAND gates, were successfully implemented via traditional lithography. These results highlight the immense potential of TMD materials, particularly MoS2, in enabling advanced flexible electronic and optoelectronic devices, which pave the way for transformative applications in future-generation electronics.
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Affiliation(s)
- Xiaojiao Guo
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Center for Integrated Quantum Information Technologies (IQIT), School of Physics and Astronomy and State Key Laboratory of Advanced Optical Communication Systems and Network, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Chip Hub for Integrated Photonics Xplore (CHIPX), Shanghai Jiao Tong University, Wuxi 214000, People's Republic of China
| | - Die Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Dejian Zhang
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, People's Republic of China
| | - Jingyi Ma
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xinyu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xinyu Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Ling Tong
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xinzhi Zhang
- Department of Physics, State Key Laboratory of Surface Physics, Institute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of Micro, Fudan University, Shanghai 200433, People's Republic of China
| | - Junqiang Zhu
- State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, People's Republic of China
| | - Saifei Gou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xiaofei Yue
- State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
| | - Chuming Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Zihan Xu
- Shenzhen Six Carbon Technology, Shenzhen 518055, People's Republic of China
| | - Zhenghua An
- Department of Physics, State Key Laboratory of Surface Physics, Institute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of Micro, Fudan University, Shanghai 200433, People's Republic of China
| | - Zhijun Qiu
- State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
| | - Chunxiao Cong
- State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Zhiqiang Fang
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, People's Republic of China
| | - Wenzhong Bao
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
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Liang Z, Wu W, Fu X, Ning H, Xu W, Xiong X, Qiu T, Luo C, Yao R, Peng J. Flexible High-Entropy Poly(vinyl alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor. J Phys Chem Lett 2023; 14:9245-9249. [PMID: 37812073 DOI: 10.1021/acs.jpclett.3c02462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/10/2023]
Abstract
In recent years, more and more attention has been paid to flexible thin-film transistors (TFTs). Therefore, we combined HfMgTiYZrOx high-entropy metal oxide and poly(vinyl alcohol) (PVA) organic material to prepare a flexible dielectric layer. We fabricated metal-insulator-metal (MIM) and TFT devices and carried out flexible tests. The test results show that the mixed dielectric layer attains a leakage current of 3.6 × 10-11 A under the bending radius of 5 mm. In the application of the TFT, the device still has good performance after 10 000 bends with a mobility of 3.1 cm2 V-1 s-1, an Ion/Ioff of 1.4 × 107, a threshold voltage of 3.3 V, and a threshold swing of 0.20 V/decade. In addition, the average transmittance of the hybrid dielectric layer in the visible range is 90.8%. Therefore, high-entropy PVA hybrid films have high transparency, low leakage current, and good bending resistance and have broad application prospects in transparent and flexible devices.
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Affiliation(s)
- Zhihao Liang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Weijing Wu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Xiao Fu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Honglong Ning
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Wei Xu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Xin Xiong
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Tian Qiu
- Department of Intelligent Manufacturing, Wuyi University, Jiangmen, Guangdong 529020, People's Republic of China
| | - Cheng Luo
- School of Materials Science and Engineering, Hubei University of Automotive Technology, Shiyan, Hubei 442002, People's Republic of China
| | - Rihui Yao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Junbiao Peng
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
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4
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Stella GM, Lettieri S, Piloni D, Ferrarotti I, Perrotta F, Corsico AG, Bortolotto C. Smart Sensors and Microtechnologies in the Precision Medicine Approach against Lung Cancer. Pharmaceuticals (Basel) 2023; 16:1042. [PMID: 37513953 PMCID: PMC10385174 DOI: 10.3390/ph16071042] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 06/23/2023] [Accepted: 07/07/2023] [Indexed: 07/30/2023] Open
Abstract
BACKGROUND AND RATIONALE The therapeutic interventions against lung cancer are currently based on a fully personalized approach to the disease with considerable improvement of patients' outcome. Alongside continuous scientific progresses and research investments, massive technologic efforts, innovative challenges, and consolidated achievements together with research investments are at the bases of the engineering and manufacturing revolution that allows a significant gain in clinical setting. AIM AND METHODS The scope of this review is thus to focus, rather than on the biologic traits, on the analysis of the precision sensors and novel generation materials, as semiconductors, which are below the clinical development of personalized diagnosis and treatment. In this perspective, a careful revision and analysis of the state of the art of the literature and experimental knowledge is presented. RESULTS Novel materials are being used in the development of personalized diagnosis and treatment for lung cancer. Among them, semiconductors are used to analyze volatile cancer compounds and allow early disease diagnosis. Moreover, they can be used to generate MEMS which have found an application in advanced imaging techniques as well as in drug delivery devices. CONCLUSIONS Overall, these issues represent critical issues only partially known and generally underestimated by the clinical community. These novel micro-technology-based biosensing devices, based on the use of molecules at atomic concentrations, are crucial for clinical innovation since they have allowed the recent significant advances in cancer biology deciphering as well as in disease detection and therapy. There is an urgent need to create a stronger dialogue between technologists, basic researchers, and clinicians to address all scientific and manufacturing efforts towards a real improvement in patients' outcome. Here, great attention is focused on their application against lung cancer, from their exploitations in translational research to their application in diagnosis and treatment development, to ensure early diagnosis and better clinical outcomes.
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Affiliation(s)
- Giulia Maria Stella
- Department of Internal Medicine and Medical Therapeutics, University of Pavia Medical School, 27100 Pavia, Italy
- Cardiothoracic and Vascular Department, Unit of Respiratory Diseases, IRCCS Policlinico San Matteo, 27100 Pavia, Italy
| | - Sara Lettieri
- Department of Internal Medicine and Medical Therapeutics, University of Pavia Medical School, 27100 Pavia, Italy
- Cardiothoracic and Vascular Department, Unit of Respiratory Diseases, IRCCS Policlinico San Matteo, 27100 Pavia, Italy
| | - Davide Piloni
- Department of Internal Medicine and Medical Therapeutics, University of Pavia Medical School, 27100 Pavia, Italy
- Cardiothoracic and Vascular Department, Unit of Respiratory Diseases, IRCCS Policlinico San Matteo, 27100 Pavia, Italy
| | - Ilaria Ferrarotti
- Department of Internal Medicine and Medical Therapeutics, University of Pavia Medical School, 27100 Pavia, Italy
- Cardiothoracic and Vascular Department, Unit of Respiratory Diseases, IRCCS Policlinico San Matteo, 27100 Pavia, Italy
| | - Fabio Perrotta
- Department of Translational Medical Sciences, University of Campania "L. Vanvitelli", 80131 Napoli, Italy
- U.O.C. Clinica Pneumologica "L. Vanvitelli", A.O. dei Colli, Ospedale Monaldi, 80131 Napoli, Italy
| | - Angelo Guido Corsico
- Department of Internal Medicine and Medical Therapeutics, University of Pavia Medical School, 27100 Pavia, Italy
- Cardiothoracic and Vascular Department, Unit of Respiratory Diseases, IRCCS Policlinico San Matteo, 27100 Pavia, Italy
| | - Chandra Bortolotto
- Department of Clinical-Surgical, Diagnostic and Paediatric Sciences, University of Pavia Medical School, 27100 Pavia, Italy
- Department of Diagnostic Services and Imaging, Unit of Radiology, Fondazione IRCCS Policlinico San Matteo, 27100 Pavia, Italy
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5
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Ye H, Ryu KY, Kwon HJ, Lee H, Wang R, Hong J, Choi HH, Nam SY, Lee J, Kong H, Kim SH. Amorphous Fluorinated Acrylate Polymer Dielectrics for Flexible Transistors and Logic Gates with High Operational Stability. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37376772 DOI: 10.1021/acsami.3c02010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
Fluorinated amorphous polymeric gate-insulating materials for organic thin-film transistors (OTFTs) not only form hydrophobic surfaces but also significantly reduce traps at the interface between the organic semiconductor and gate insulator. Therefore, these polymeric materials can enhance the OTFT's operation stability. In this study, we synthesized a new polymeric insulating material series composed of acrylate and fluorinated functional groups (with different ratios) named MBHCa-F and used them as gate insulators for OTFTs and in other applications. The insulating features of the MBHCa-F polymers, including surface energy, surface atomic content properties, dielectric constant, and leakage current, were clearly analyzed with respect to the content of the fluorinated functional groups. At higher fluorine-based functional group content, the polymeric series exhibited higher fluorine-based contents at the surface and superior electrical properties, such as field-effect mobility and driving stability, at OTFTs. Therefore, we believe that this study provides a substantial method for synthesizing polymeric insulating materials to enhance the operational stability and electrical performance of OTFTs.
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Affiliation(s)
- Heqing Ye
- Department of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Ka Yeon Ryu
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
- Department of Chemistry and Research Institute of Nature Science, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Hyunji Lee
- Research Center for Advanced Specialty Chemicals, Korea Research Institute of Chemical Technology, Ulsan 44412 Republic of Korea
| | - Rixuan Wang
- Department of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Jisu Hong
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Hyun Ho Choi
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Sang Yong Nam
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Jihoon Lee
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Hoyoul Kong
- Department of Chemistry and Research Institute of Nature Science, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Se Hyun Kim
- School of Chemical Engineering, Konkuk University, Seoul 05029, Korea
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6
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Lee C, Lee C, Lee S, Choi J, Yoo H, Im SG. A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors. Nat Commun 2023; 14:3757. [PMID: 37353504 DOI: 10.1038/s41467-023-39394-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Accepted: 06/06/2023] [Indexed: 06/25/2023] Open
Abstract
A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable transition between N-shaped transfer curves with distinct NTC and monolithically current-increasing transfer curves without apparent NTC can be accomplished through programming operation. Based on the H-MTR, a binary/ternary reconfigurable logic inverter (R-inverter) has been successfully implemented, which showed an unprecedentedly high static noise margin of 85% for binary logic operation and 59% for ternary logic operation, as well as long-term stability and outstanding cycle endurance. Furthermore, a ternary/binary dynamic logic conversion-in-memory has been demonstrated using a serially-connected R-inverter chain. The ternary/binary dynamic logic conversion-in-memory could generate three different output logic sequences for the same input signal in three logic levels, which is a new logic computing method that has never been presented before.
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Affiliation(s)
- Chungryeol Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea
| | - Seungmin Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea
| | - Junhwan Choi
- Department of Chemical Engineering, Dankook University, 152, Jukjeon-ro, Suji-gu, Yongin, 16890, South Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Korea.
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea.
- KAIST Institute for NanoCentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea.
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7
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Lee H, Kim YE, Bae J, Jung S, Sporea RA, Kim CH. High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide-Diketopyrrolopyrrole Polymer Interface. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10918-10925. [PMID: 36799771 DOI: 10.1021/acsami.2c22350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Source-gated transistors are a new driver of low-power high-gain thin-film electronics. However, source-gated transistors based on organic semiconductors are not widely investigated yet despite their potential for future display and sensor technologies. We report on the fabrication and modeling of high-performance organic source-gated transistors utilizing a critical junction formed between indium-tin oxide and diketopyrrolopyrrole polymer. This partially blocked hole-injection interface is shown to offer both a sufficient level of drain currents and a strong depletion effect necessary for source pinch-off. As a result, our transistors exhibit a set of outstanding metrics, including an intrinsic gain of 160 V/V, an output resistance of 4.6 GΩ, and a saturation coefficient of 0.2 at an operating voltage of 5 V. Drift-diffusion simulation is employed to reproduce and rationalize the experimental data. The modeling reveals that the effective contact length is significantly reduced in an interdigitated electrode geometry, eventually contributing to the realization of low-voltage saturation.
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Affiliation(s)
- Hyuna Lee
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Yeo Eun Kim
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Jisuk Bae
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Sungyeop Jung
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
| | - Radu A Sporea
- Advanced Technology Institute, School of Computer Science and Electronic Engineering, University of Surrey, Guildford GU2 7XH, Surrey, U.K
| | - Chang-Hyun Kim
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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8
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Yang L, Hu H, Scholz A, Feist F, Cadilha Marques G, Kraus S, Bojanowski NM, Blasco E, Barner-Kowollik C, Aghassi-Hagmann J, Wegener M. Laser printed microelectronics. Nat Commun 2023; 14:1103. [PMID: 36843156 PMCID: PMC9968718 DOI: 10.1038/s41467-023-36722-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 02/13/2023] [Indexed: 02/28/2023] Open
Abstract
Printed organic and inorganic electronics continue to be of large interest for sensors, bioelectronics, and security applications. Many printing techniques have been investigated, albeit often with typical minimum feature sizes in the tens of micrometer range and requiring post-processing procedures at elevated temperatures to enhance the performance of functional materials. Herein, we introduce laser printing with three different inks, for the semiconductor ZnO and the metals Pt and Ag, as a facile process for fabricating printed functional electronic devices with minimum feature sizes below 1 µm. The ZnO printing is based on laser-induced hydrothermal synthesis. Importantly, no sintering of any sort needs to be performed after laser printing for any of the three materials. To demonstrate the versatility of our approach, we show functional diodes, memristors, and a physically unclonable function based on a 6 × 6 memristor crossbar architecture. In addition, we realize functional transistors by combining laser printing and inkjet printing.
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Affiliation(s)
- Liang Yang
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany.
- Institute of Applied Physics (APH), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany.
- Suzhou Institute for Advanced Research, University of Science and Technology of China (USTC), 215127, Suzhou, China.
| | - Hongrong Hu
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany
| | - Alexander Scholz
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany
| | - Florian Feist
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany
| | - Gabriel Cadilha Marques
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany
| | - Steven Kraus
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany
- Institute of Applied Physics (APH), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany
| | | | - Eva Blasco
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany
- Institut für Organische Chemie, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
- Institute for Molecular Systems Engineering and Advanced Materials (IMSEAM), Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 225 and 270, 69120, Heidelberg, Germany
| | - Christopher Barner-Kowollik
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany
- School of Chemistry and Physics, Queensland University of Technology (QUT), 2 George Street, Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology (QUT), 2 George Street, Brisbane, QLD, 4000, Australia
| | - Jasmin Aghassi-Hagmann
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany
| | - Martin Wegener
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany.
- Institute of Applied Physics (APH), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany.
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9
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Haldar T, Wollandt T, Weis J, Zschieschang U, Klauk H, Weitz RT, Burghartz JN, Geiger M. High-gain, low-voltage unipolar logic circuits based on nanoscale flexible organic thin-film transistors with small signal delays. SCIENCE ADVANCES 2023; 9:eadd3669. [PMID: 36608119 PMCID: PMC9821857 DOI: 10.1126/sciadv.add3669] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Accepted: 12/08/2022] [Indexed: 06/17/2023]
Abstract
One of the circuit topologies for the implementation of unipolar integrated circuits (circuits that use either p-channel or n-channel transistors, but not both) is the zero-VGS architecture. Zero-VGS circuits often provide excellent static performance (large small-signal gain and large noise margins), but they suffer from the large signal delay imposed by the load transistor. To address this limitation, we have used electron-beam lithography to fabricate zero-VGS circuits based on organic transistors with channel lengths as small as 120 nm on flexible polymeric substrates. For a supply voltage of 3 V, these circuits have characteristic signal-delay time constants of 14 ns for the low-to-high transition and 560 ns for the high-to-low transition of the circuit's output voltage. These signal delays represent the best dynamic performance reported to date for organic transistor-based zero-VGS circuits. The signal-delay time constant of 14 ns is also the smallest signal delay reported to date for flexible organic transistors.
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Affiliation(s)
- Tanumita Haldar
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Tobias Wollandt
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Jürgen Weis
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Ute Zschieschang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Hagen Klauk
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - R Thomas Weitz
- First Institute of Physics, Georg August University of Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany
| | - Joachim N Burghartz
- Institute for Microelectronics (IMS CHIPS), Allmandring 30a, Stuttgart 70569, Germany
| | - Michael Geiger
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
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Liu Z, Kong J, Qu M, Zhao G, Zhang C. Progress in Data Acquisition of Wearable Sensors. BIOSENSORS 2022; 12:889. [PMID: 36291026 PMCID: PMC9599646 DOI: 10.3390/bios12100889] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Revised: 10/10/2022] [Accepted: 10/13/2022] [Indexed: 06/16/2023]
Abstract
Wearable sensors have demonstrated wide applications from medical treatment, health monitoring to real-time tracking, human-machine interface, smart home, and motion capture because of the capability of in situ and online monitoring. Data acquisition is extremely important for wearable sensors, including modules of probes, signal conditioning, and analog-to-digital conversion. However, signal conditioning, analog-to-digital conversion, and data transmission have received less attention than probes, especially flexible sensing materials, in research on wearable sensors. Here, as a supplement, this paper systematically reviews the recent progress of characteristics, applications, and optimizations of transistor amplifiers and typical filters in signal conditioning, and mainstream analog-to-digital conversion strategies. Moreover, possible research directions on the data acquisition of wearable sensors are discussed at the end of the paper.
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11
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Choi J, Lee C, Kang J, Lee C, Lee SM, Oh J, Choi SY, Im SG. A Sub-20 nm Organic/Inorganic Hybrid Dielectric for Ultralow-Power Organic Thin-Film Transistor (OTFT) With Enhanced Operational Stability. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203165. [PMID: 36026583 DOI: 10.1002/smll.202203165] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Revised: 07/15/2022] [Indexed: 06/15/2023]
Abstract
Organic/inorganic hybrid materials are utilized extensively as gate dielectric layers in organic thin-film transistors (OTFTs). However, inherently low dielectric constant of organic materials and lack of a reliable deposition process for organic layers hamper the broad application of hybrid dielectric materials. Here, a universal strategy to synthesize high-k hybrid dielectric materials by incorporating a high-k polymer layer on top of various inorganic layers generated by different fabrication methods, including AlOx and HfOx , is presented. Those hybrid dielectrics commonly exhibit high capacitance (>300 nF·cm-2 ) as well as excellent insulating properties. A vapor-phase deposition method is employed for precise control of the polymer film thickness. The ultralow-voltage (<3 V) OTFTs are demonstrated based on the hybrid dielectric layer with 100% yield and uniform electrical characteristics. Moreover, the exceptionally high stability of OTFTs for long-term operation (current change less than 5% even under 30 h of voltage stress at 2.0 MV·cm-1 ) is achieved. The hybrid dielectric is fully compatible with various substrates, which allows for the demonstration of intrinsically flexible OTFTs on the plastic substrate. It is believed that this approach for fabricating hybrid dielectrics by introducing the high-k organic material can be a promising strategy for future low-power, flexible electronics.
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Affiliation(s)
- Junhwan Choi
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Chungryeol Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Juyeon Kang
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seung Min Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jungyeop Oh
- School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
- KAIST Institute for NanoCentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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