Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor

Bidirectional Photovoltage-Driven Oxide Transistors for Neuromorphic Visual Sensors

Biological vision is one of the most important parts of the human perception system. However, emulating biological visuals is challenging because it requires complementary photoexcitation and photoinhibition. Here, the study presents a bidirectional photovoltage-driven neuromorphic visual sensor (BPNVS) that is constructed by monolithically integrating two perovskite solar cells (PSCs) with dual-gate ion-gel-gated oxide transistors. PSCs act as photoreceptors, converting external visual stimuli into electrical signals, whereas oxide transistors generate neuromorphic signal outputs that can be adjusted to produce positive and negative photoresponses. This device mimics the human vision system's ability to recognize colored and color-mixed patterns. The device achieves a static color recognition accuracy of 96% by utilizing the reservoir computing system for feature extraction. The BPNVS mem-reservoir chip is also proposed for handing object movement and dynamic color recognition. This work is a significant step forward in neuromorphic sensing and complex pattern recognition.

Photovoltage-Driven Photoconductor Based on Horizontal p-n-p Junction

The photoconductive gain theory demonstrates that the photoconductive gain is related to the ratio of carrier lifetime to carrier transit time. Theoretically, to achieve higher gain, one can either prolong the carrier lifetime or select materials with high mobility to shorten the transit time. However, the former slows the response speed of the device, while the latter increases the dark current and degrades device sensitivity. To address this challenge, a horizontal p-n-p junction-based photoconductor is proposed in this work. This device utilizes the n-region as the charge transport channel, with the charge transport direction perpendicular to the p-n-p junction. This design offers two advantages: (i) the channel is depleted by the space charge layer generated by the p and n regions, enabling the device to maintain a low dark current. (ii) The photovoltage generated in the p-n junction upon light absorption can compress the space charge layer and expand the conductive path in the n-region, enabling the device to achieve high gain and responsivity without relying on long carrier lifetimes. By adopting this device structure design, a balance between responsivity, dark current, and response speed is achieved, offering a new approach to designing high-performance photodetectors based on both traditional materials and emerging nanomaterials.

Superior AlGaN/GaN-Based Phototransistors and Arrays with Reconfigurable Triple-Mode Functionalities Enabled by Voltage-Programmed Two-Dimensional Electron Gas for High-Quality Imaging

High-quality imaging units are indispensable in modern optoelectronic systems for accurate recognition and processing of optical information. To fulfill massive and complex imaging tasks in the digital age, devices with remarkable photoresponsive characteristics and versatile reconfigurable functions on a single-device platform are in demand but remain challenging to fabricate. Herein, an AlGaN/GaN-based double-heterostructure is reported, incorporated with a unique compositionally graded AlGaN structure to generate a channel of polarization-induced two-dimensional electron gas (2DEGs). Owing to the programmable feature of the 2DEGs by the combined gate and drain voltage inputs, with a particular capability of electron separation, collection and storage under different light illumination, the phototransistor shows reconfigurable multifunctional photoresponsive behaviors with superior characteristics. A self-powered mode with a responsivity over 100 A W-1 and a photoconductive mode with a responsivity of ≈108 A W-1 are achieved, with the ultimate demonstration of a 10 × 10 device array for imaging. More intriguingly, the device can be switched to photoelectric synapse mode, emulating synaptic functions to denoise the imaging process while prolonging the image storage ability. The demonstration of three-in-one operational characteristics in a single device offers a new path toward future integrated and multifunctional imaging units.

Surface Energy-Assisted Patterning of Vapor Deposited All-Inorganic Perovskite Arrays for Wearable Optoelectronics

Solution-based methods for fabricating all-inorganic perovskite film arrays often suffer from limited control over nucleation and crystallization, resulting in poor homogeneity and coverage. To improve film quality, advanced vapor deposition techniques are employed for continuous film. Here, the vapor deposition strategy to the all-inorganic perovskite films array, enabling area-selective deposition of perovskite through substrate modulation is expanded. It can yield a high-quality perovskite film array with different pixel shapes, various perovskite compositions, and a high resolution of 423 dpi. The resulting photodetector arrays exhibit remarkable optoelectronic performance with an on/off ratio of 13 887 and responsivity of 47.5 A W-1. The device also displays long-term stability in a damp condition for up to 12 h. Moreover, a pulse monitoring sensor based on the perovskite films array demonstrates stable monitoring for pulse signals after being worn for 12 h and with a low illumination of 0.055 mW cm-2, highlighting the potential application in wearable optoelectronic devices.

Emission characteristics of pulse CNT cold cathode X-ray source combined with channel electron multiplier

Carbon nanotube (CNT)-based field emission X-ray source with the advantage of fast start-up response offers the chance to achieve high-frequency X-ray emission. In this study, a high-frequency random pulse X-ray source of CNT cold cathode combined with a channel electron multiplier (CEM) was built, and its direct current (DC) and pulse emission characteristics were tested. The DC measurement results were used for parameter selection for performing pulse experiments. During the DC test, with the conditions of 2.2 kV CEM bias voltage and 25 kV anode voltage, the anode currents are 141, 250, and 300 μA at grid voltages of 290, 387.6, and 432.2 V, respectively; the corresponding grid field values are 1.45, 1.94, and 2.16 V/μm. During the pulse test, the amplitude-frequency response of the X-ray source reaches 3.58 MHz at 3 dB. The developed pulse X-ray source was introduced into the X-ray communication (XCOM), and the experimental communication rate reached 6 Mbps with the bit-error-rate of 1.1 × 10-3. The developed high-frequency pulse CNT-CEM X-ray source has potential applications in XCOM, high-speed X-ray imaging, and other fields.

Retinomorphic Motion Detector Fabricated with Organic Infrared Semiconductors

Organic retinomorphic sensors offer the advantage of in-sensor processing to filter out redundant static backgrounds and are well suited for motion detection. To improve this promising structure, here, the key role of interfacial energetics in promoting charge accumulation to raise the inherent photoresponse of the light-sensitive capacitor is studied. Specifically, incorporating appropriate interfacial layers around the photoactive layer is crucial to extend the carrier lifetime, as confirmed by intensity-modulated photovoltage spectroscopy. Compared to its photodiode counterpart, the retinomorphic sensor shows better detectivity and response speed due to the additional insulating layer, which reduces the dark current and the RC time constant. Lastly, three retinomorphic sensors are integrated into a line array to demonstrate the detection of movement speed and direction, showing the potential of retinomorphic designs for efficient motion tracking.