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Qin B, Ma C, Guo Q, Li X, Wei W, Ma C, Wang Q, Liu F, Zhao M, Xue G, Qi J, Wu M, Hong H, Du L, Zhao Q, Gao P, Wang X, Wang E, Zhang G, Liu C, Liu K. Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals. Science 2024; 385:99-104. [PMID: 38963849 DOI: 10.1126/science.ado6038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Accepted: 05/17/2024] [Indexed: 07/06/2024]
Abstract
Rhombohedral-stacked transition-metal dichalcogenides (3R-TMDs), which are distinct from their hexagonal counterparts, exhibit higher carrier mobility, sliding ferroelectricity, and coherently enhanced nonlinear optical responses. However, surface epitaxial growth of large multilayer 3R-TMD single crystals is difficult. We report an interfacial epitaxy methodology for their growth of several compositions, including molybdenum disulfide (MoS2), molybdenum diselenide, tungsten disulfide, tungsten diselenide, niobium disulfide, niobium diselenide, and molybdenum sulfoselenide. Feeding of metals and chalcogens continuously to the interface between a single-crystal Ni substrate and grown layers ensured consistent 3R stacking sequence and controlled thickness from a few to 15,000 layers. Comprehensive characterizations confirmed the large-scale uniformity, high crystallinity, and phase purity of these films. The as-grown 3R-MoS2 exhibited room-temperature mobilities up to 155 and 190 square centimeters per volt second for bi- and trilayers, respectively. Optical difference frequency generation with thick 3R-MoS2 showed markedly enhanced nonlinear response under a quasi-phase matching condition (five orders of magnitude greater than monolayers).
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Affiliation(s)
- Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Wenya Wei
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Chenjun Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Qinghe Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Fang Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Mengze Zhao
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Jiajie Qi
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Muhong Wu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qing Zhao
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Peng Gao
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Enge Wang
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
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Zeng Z, Tian Z, Wang Y, Ge C, Strauß F, Braun K, Michel P, Huang L, Liu G, Li D, Scheele M, Chen M, Pan A, Wang X. Dual polarization-enabled ultrafast bulk photovoltaic response in van der Waals heterostructures. Nat Commun 2024; 15:5355. [PMID: 38918419 PMCID: PMC11199638 DOI: 10.1038/s41467-024-49760-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Accepted: 06/19/2024] [Indexed: 06/27/2024] Open
Abstract
The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide the ideal platform for BPVE due to interfacial interactions naturally breaking the crystal symmetries of the individual constituents and thus inducing charge polarizations. Here, we show an approach to obtain ultrafast BPVE by taking advantage of dual interfacial polarizations in vdW heterostructures. While the in-plane polarization gives rise to the BPVE in the overlayer, the charge carrier transfer assisted by the out-of-plane polarization further accelerates the interlayer electronic transport and enhances the BPVE. We illustrate the concept in MoS2/black phosphorus heterostructures, where the experimentally observed intrinsic BPVE response time achieves 26 ps, orders of magnitude faster than that of conventional non-centrosymmetric materials. Moreover, the heterostructure device possesses an extrinsic response time of approximately 2.2 ns and a bulk photovoltaic coefficient of 0.6 V-1, which is among the highest values for vdW BPV devices reported so far. Our study thus points to an effective way of designing ultrafast BPVE for high-speed photodetection.
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Grants
- the National Key Research and Development Program of Ministry of Science and Technology (Nos. 2022YFA1204300), the National Natural Science Foundation of China (Nos. 52022029, 52302175, 52221001, U23A20570, 92263107, 62090035, 12174098), the Hunan Provincial Natural Science Foundation of China (Nos. 2023JJ40138, 2022JJ30142),
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Affiliation(s)
- Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Zhiqiang Tian
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Yufan Wang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Cuihuan Ge
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Fabian Strauß
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Patrick Michel
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Lanyu Huang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guixian Liu
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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Strauß F, Zeng Z, Braun K, Scheele M. Toward Gigahertz Photodetection with Transition Metal Dichalcogenides. Acc Chem Res 2024; 57:1488-1499. [PMID: 38713448 DOI: 10.1021/acs.accounts.4c00088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
ConspectusTransition metal dichalcogenides (TMDCs) exhibit favorable properties for optical communication in the gigahertz (GHz) regime, such as large mobilities, high extinction coefficients, cheap fabrication, and silicon compatibility. While impressive improvements in their sensitivity have been realized over the past decade, the bandwidths of these devices have been mostly limited to a few megahertz. We argue that this shortcoming originates in the relatively large RC constants of TMDC-based photodetectors, which suffer from high surface defect densities, inefficient charge carrier injection at the electrode/TMDC interface, and long charging times. However, we show in a series of papers that rather simple adjustments in the device architecture afford TMDC-based photodetectors with bandwidths of several hundreds of megahertz. We rationalize the success of these adjustments in terms of the specific physical-chemical properties of TMDCs, namely their anisotropic in-plane/out-of-plane carrier behavior, large optical absorption, and chalcogenide-dependent surface chemistry. Just one surprisingly simple yet effective pathway to fast TMDC photodetection is the reduction of the photoresistance by using light-focusing optics, which enables bandwidths of 0.23 GHz with an energy consumption of only 27 fJ/bit.By reflecting on the ultrafast intrinsic photoresponse times of a few picoseconds in TMDC heterostructures, we motivate the application of more demanding chemical strategies to exploit such ultrafast intrinsic properties for true GHz operation in real devices. A key aspect in this regard is the management of surface defects, which we discuss in terms of its dependence on the layer thickness, its tunability by molecular adlayers, and the prospects of replacing thermally evaporated metal contacts by laser-printed electrodes fabricated with inks of metalloid clusters. We highlight the benefits of combining TMDCs with graphene to heterostructures that exhibit the ultrafast photoresponse and large spectral range of Dirac materials with the low dark currents and high responsivities of semiconductors. We introduce the bulk photovoltaic effect in TMDC-based materials with broken inversion symmetry as well as a combination of TMDCs with plasmonic nanostructures as means for increasing the bandwidth and responsivity simultaneously. Finally, we describe the prospects of embedding TMDC photodetectors into optical cavities with the objective of tuning the lifetime of the photoexcited state and increasing the carrier mobility in the photoactive layer.The findings and concepts detailed in this Account demonstrate that GHz photodetection with TMDCs is feasible, and we hope that these bright prospects for their application as next-generation optoelectronic materials motivate more chemists and material scientists to actively pursue the development of the more complicated material combinations outlined here.
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Affiliation(s)
- Fabian Strauß
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, Universität Tübingen, Auf der Morgenstelle 15, D-72076 Tübingen, Germany
| | - Zhouxiaosong Zeng
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, Universität Tübingen, Auf der Morgenstelle 15, D-72076 Tübingen, Germany
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, Universität Tübingen, Auf der Morgenstelle 15, D-72076 Tübingen, Germany
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Fox C, Mao Y, Zhang X, Wang Y, Xiao J. Stacking Order Engineering of Two-Dimensional Materials and Device Applications. Chem Rev 2024; 124:1862-1898. [PMID: 38150266 DOI: 10.1021/acs.chemrev.3c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
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Affiliation(s)
- Carter Fox
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Xiang Zhang
- Faculty of Science, University of Hong Kong, Hong Kong, China
- Faculty of Engineering, University of Hong Kong, Hong Kong, China
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
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5
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Yang D, Liang J, Wu J, Xiao Y, Dadap JI, Watanabe K, Taniguchi T, Ye Z. Non-volatile electrical polarization switching via domain wall release in 3R-MoS 2 bilayer. Nat Commun 2024; 15:1389. [PMID: 38360848 PMCID: PMC10869714 DOI: 10.1038/s41467-024-45709-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 02/02/2024] [Indexed: 02/17/2024] Open
Abstract
Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS2 with natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response.
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Affiliation(s)
- Dongyang Yang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jing Liang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jingda Wu
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Yunhuan Xiao
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jerry I Dadap
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Ziliang Ye
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada.
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada.
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Wang J, Han N, Lin Z, Hu S, Tian R, Zhang M, Zhang Y, Zhao J, Gan X. A giant intrinsic photovoltaic effect in atomically thin ReS 2. NANOSCALE 2024; 16:3101-3106. [PMID: 38250820 DOI: 10.1039/d3nr05355e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
The photovoltaic (PV) effect in non-centrosymmetric materials consisting of a single component under homogeneous illumination can exceed the fundamental Shockley-Queisser limit compared to the traditional p-n junctions. Two-dimensional (2D) materials with a reduced dimensionality and smaller bandgap were predicated to be better candidates for the PV effect with high efficiency exceeding that of traditional ferroelectric perovskite oxides. Here, we report the giant intrinsic PV effect in atomically thin rhenium disulfide (ReS2) with centrosymmetry breaking. In graphene/ReS2/graphene sandwich structures, significant short-circuit currents (Isc) were observed with illumination over the visible spectral range, presenting the highest responsivity (110 mA W-1) and external quantum efficiency (25.7%) among those reported PV effects in 2D materials. This giant PV effect could be ascribed to the spontaneous-polarization induced depolarization field in even-number-layered ReS2 flakes benefiting from the distorted 1T lattice structure. Our results provide a new potential candidate material for the development of novel high-efficiency, miniaturized and easily integrated photodetectors and solar cells.
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Affiliation(s)
- Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China.
| | - Zhihua Lin
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China.
| | - Siqi Hu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Yu Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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Liang J, Yang D, Xiao Y, Chen S, Dadap JI, Rottler J, Ye Z. Shear Strain-Induced Two-Dimensional Slip Avalanches in Rhombohedral MoS 2. NANO LETTERS 2023; 23:7228-7235. [PMID: 37358360 DOI: 10.1021/acs.nanolett.3c01487] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2023]
Abstract
Slip avalanches are ubiquitous phenomena occurring in three-dimensional materials under shear strain, and their study contributes immensely to our understanding of plastic deformation, fragmentation, and earthquakes. So far, little is known about the role of shear strain in two-dimensional (2D) materials. Here we show some evidence of 2D slip avalanches in exfoliated rhombohedral MoS2, triggered by shear strain near the threshold level. Utilizing interfacial polarization in 3R-MoS2, we directly probe the stacking order in multilayer flakes and discover a wide variety of polarization domains with sizes following a power-law distribution. These findings suggest that slip avalanches can occur during the exfoliation of 2D materials, and the stacking orders can be changed via shear strain. Our observation has far-reaching implications for the development of new materials and technologies, where precise control over the atomic structure of these materials is essential for optimizing their properties as well as for our understanding of fundamental physical phenomena.
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Affiliation(s)
- Jing Liang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Dongyang Yang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Yunhuan Xiao
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Sean Chen
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Jerry I Dadap
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Joerg Rottler
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Ziliang Ye
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
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