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Guo L, Yang X, Liang Y, Wu Z, San X, Wang Z, Li L, Liu Z, Chen J, Wang S, Zhang X, Pan C, Yang Z. Synergistic Effect of Ionic Liquid and Embedded QDs on 2D Ferroelectric Perovskite Films with Narrow Phase Distribution for Self-Powered and Broad-Band Photodetectors. NANO LETTERS 2024; 24:11599-11606. [PMID: 39229905 DOI: 10.1021/acs.nanolett.4c03143] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2024]
Abstract
2D layered metal halide perovskites (MHPs) are a potential material for fabricating self-powered photodetectors (PDs). Nevertheless, 2D MHPs produced via solution techniques frequently exhibit multiple quantum wells, leading to notable degradation in the device performance. Besides, the wide band gap in 2D perovskites limits their potential for broad-band photodetection. Integrating narrow-band gap materials with perovskite matrices is a viable strategy for broad-band PDs. In this study, the use of methylamine acetate (MAAc) as an additive in 2D perovskite precursors can effectively control the width of the quantum wells (QWs). The amount of MAAc greatly affects the phase purity. Subsequently, PbSe QDs were embedded into the 2D perovskite matrix with a broadened absorption spectrum and no negative effects on ferroelectric properties. PM6:Y6 was combined with the hybrid ferroelectric perovskite films to create a self-powered and broad-band PD with enhanced performance due to a ferro-pyro-phototronic effect, reaching a peak responsivity of 2.4 A W-1 at 940 nm.
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Affiliation(s)
- Linjuan Guo
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Xiaoran Yang
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Yu Liang
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Zihao Wu
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Xingyuan San
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Zhenguang Wang
- Key Laboratory of Chemical Biology of Hebei Province, Key Laboratory of Medicinal Chemistry and Molecular Diagnosis, Ministry of Education, College of Chemistry and Materials Science, Hebei University, Baoding 071002, P. R. China
| | - Leipeng Li
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
- Institute of Life Science and Green Development, Hebei University, Baoding 071002, P. R. China
| | - Zhenyang Liu
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Jianhui Chen
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Shufang Wang
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Xuning Zhang
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Caofeng Pan
- Institute of Atomic Manufacturing, Beihang University, Beijing 100191, P. R. China
| | - Zheng Yang
- Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
- Institute of Life Science and Green Development, Hebei University, Baoding 071002, P. R. China
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2
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Nodari D, Hart LJF, Sandberg OJ, Furlan F, Angela E, Panidi J, Qiao Z, McLachlan MA, Barnes PRF, Durrant JR, Ardalan A, Gasparini N. Dark Current in Broadband Perovskite-Organic Heterojunction Photodetectors Controlled by Interfacial Energy Band Offset. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401206. [PMID: 38888509 DOI: 10.1002/adma.202401206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 06/07/2024] [Indexed: 06/20/2024]
Abstract
Lead halide perovskite and organic semiconductors are promising classes of materials for photodetector (PD) applications. State-of-the-art perovskite PDs have performance metrics exceeding silicon PDs in the visible. While organic semiconductors offer bandgap tunability due to their chemical design with detection extended into the near-infrared (NIR), perovskites are limited to the visible band and the first fraction of the NIR spectrum. In this work, perovskite-organic heterojunction (POH) PDs with absorption up to 950 nm are designed by the dual contribution of perovskite and the donor:acceptor bulk-heterojunction (BHJ), without any intermediate layer. The effect of the energetics of the donor materials is systematically studied on the dark current (Jd) of the device by using the PBDB-T polymer family. Combining the experimental results with drift-diffusion simulations, it is shown that Jd in POH devices is limited by thermal generation via deep trap states in the BHJ. Thus, the best performance is obtained for the PM7-based POH, which delivers an ultra-low noise current of 2 × 10-14 A Hz-1/2 and high specific detectivity of 4.7 × 1012 Jones in the NIR. Last, the application of the PM7-based POH devices as NIR pulse oximeter with high-accuracy heartbeat monitoring at long-distance of 2 meters is demonstrated.
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Affiliation(s)
- Davide Nodari
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, 82 Wood Lane, London, W12 0BZ, UK
| | - Lucy J F Hart
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, 82 Wood Lane, London, W12 0BZ, UK
| | - Oskar J Sandberg
- Sustainable Advanced Materials (Sêr-SAM), Department of Physics, Swansea University, Singleton Park, Swansea, Wales, SA2 8PP, UK
- Physics, Faculty of Science and Engineering, Åbo Akademi University, Henrikinkatu 2, Turku, 20500, Finland
| | - Francesco Furlan
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, 82 Wood Lane, London, W12 0BZ, UK
| | - Edoardo Angela
- Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK
| | - Julianna Panidi
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, 82 Wood Lane, London, W12 0BZ, UK
| | - Zhuoran Qiao
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, 82 Wood Lane, London, W12 0BZ, UK
| | - Martyn A McLachlan
- Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK
| | - Piers R F Barnes
- Department of Physics, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK
| | - James R Durrant
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, 82 Wood Lane, London, W12 0BZ, UK
- Department of Materials Science and Engineering and SPECIFIC IKC, Swansea University, Bay Campus, Fabian Way, Swansea, Wales, SA1 8EN, UK
| | - Armin Ardalan
- Sustainable Advanced Materials (Sêr-SAM), Department of Physics, Swansea University, Singleton Park, Swansea, Wales, SA2 8PP, UK
| | - Nicola Gasparini
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, 82 Wood Lane, London, W12 0BZ, UK
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3
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Du B, Xiong S, Sun L, Tagawa Y, Inoue D, Hashizume D, Wang W, Guo R, Yokota T, Wang S, Ishida Y, Lee S, Fukuda K, Someya T. A water-resistant, ultrathin, conformable organic photodetector for vital sign monitoring. SCIENCE ADVANCES 2024; 10:eadp2679. [PMID: 39047100 PMCID: PMC11268404 DOI: 10.1126/sciadv.adp2679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Accepted: 06/20/2024] [Indexed: 07/27/2024]
Abstract
Ultrathin flexible photodetectors can be conformably integrated with the human body, offering promising advancements for emerging skin-interfaced sensors. However, the susceptibility to degradation in ambient and particularly in aqueous environments hinders their practical application. Here, we report a 3.2-micrometer-thick water-resistant organic photodetector capable of reliably monitoring vital sign while submerged underwater. Embedding the organic photoactive layer in an adhesive elastomer matrix induces multidimensional hybrid phase separation, enabling high adhesiveness of the photoactive layer on both the top and bottom surfaces with maintained charge transport. This improves the water-immersion stability of the photoactive layer and ensures the robust sealing of interfaces within the device, notably suppressing fluid ingression in aqueous environments. Consequently, our fabricated ultrathin organic photodetector demonstrates stability in deionized water or cell nutrient media over extended periods, high detectivity, and resilience to cyclic mechanical deformation. We also showcase its potential for vital sign monitoring while submerged underwater.
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Affiliation(s)
- Baocai Du
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Sixing Xiong
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Lulu Sun
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Yusaku Tagawa
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Daishi Inoue
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Daisuke Hashizume
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Wenqing Wang
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Ruiqi Guo
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Tomoyuki Yokota
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Shuxu Wang
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Yasuhiro Ishida
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Sunghoon Lee
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Kenjiro Fukuda
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Takao Someya
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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4
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He Y, Hu Y, Peng M, Fu L, Gao E, Liu Z, Dong C, Li S, Ge C, Yuan C, Bao X, Li K, Chen C, Tang J. One-Dimensional Crystal-Structure Te-Se Alloy for Flexible Shortwave Infrared Photodetector and Imaging. NANO LETTERS 2024; 24:5774-5782. [PMID: 38709116 DOI: 10.1021/acs.nanolett.4c00881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2024]
Abstract
Flexible shortwave infrared detectors play a crucial role in wearable devices, bioimaging, automatic control, etc. Commercial shortwave infrared detectors face challenges in achieving flexibility due to the high fabrication temperature and rigid material properties. Herein, we develop a high-performance flexible Te0.7Se0.3 photodetector, resulting from the unique 1D crystal structure and small elastic modulus of Te-Se alloying. The flexible photodetector exhibits a broad-spectrum response ranging from 365 to 1650 nm, a fast response time of 6 μs, a broad linear dynamic range of 76 dB, and a specific detectivity of 4.8 × 1010 Jones at room temperature. The responsivity of the flexible detector remains at 93% of its initial value after bending with a small curvature of 3 mm. Based on the optimized flexible detector, we demonstrate its application in shortwave infrared imaging. These results showcase the great potential of Te0.7Se0.3 photodetectors for flexible electronics.
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Affiliation(s)
- Yuming He
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Yuxuan Hu
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Liuchong Fu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Ertan Gao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Zunyu Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Chong Dong
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Sen Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Ciyu Ge
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Can Yuan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xiaoqing Bao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Optics Valley Laboratory, Hubei 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Optics Valley Laboratory, Hubei 430074, China
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5
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Zhao Z, Sun M, Ji Y, Mao K, Huang Z, Yuan C, Yang Y, Ding H, Yang Y, Li Y, Chen W, Zhu J, Wei J, Xu J, Paritmongkol W, Abate A, Xiao Z, He L, Hu Q. Efficient Homojunction Tin Perovskite Solar Cells Enabled by Gradient Germanium Doping. NANO LETTERS 2024; 24:5513-5520. [PMID: 38634689 DOI: 10.1021/acs.nanolett.4c00646] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
P-type self-doping is known to hamper tin-based perovskites for developing high-performance solar cells by increasing the background current density and carrier recombination processes. In this work, we propose a gradient homojunction structure with germanium doping that generates an internal electric field across the perovskite film to deplete the charge carriers. This structure reduces the dark current density of perovskite by over 2 orders of magnitude and trap density by an order of magnitude. The resultant tin-based perovskite solar cells exhibit a higher power conversion efficiency of 13.3% and excellent stability, maintaining 95% and 85% of their initial efficiencies after 250 min of continuous illumination and 3800 h of storage, respectively. We reveal the homojunction formation mechanism using density functional theory calculations and molecular level characterizations. Our work provides a reliable strategy for controlling the spatial energy levels in tin perovskite films and offers insights into designing intriguing lead-free perovskite optoelectronics.
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Affiliation(s)
- Zhenzhu Zhao
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Mulin Sun
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Yuyang Ji
- Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
| | - Kaitian Mao
- Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Zongming Huang
- Department of Physics, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Chengjian Yuan
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Yuqian Yang
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Honghe Ding
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Yingguo Yang
- Shanghai Synchrotron Radiation Facility, Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
| | - Yu Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
- 3rd Institute of Physics, University of Stuttgart, Stuttgart 70569, Germany
| | - Wenjing Chen
- Department of Physics, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Junfa Zhu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Jing Wei
- Beijing Key Laboratory of Construction-Tailorable Advanced Functional Materials and Green Applications, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jixian Xu
- Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Watcharaphol Paritmongkol
- Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Wangchan Valley, Rayong 21210, Thailand
| | - Antonio Abate
- Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, Berlin 12489, Germany
| | - Zhengguo Xiao
- Department of Physics, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Lixin He
- Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- Institute of Artificial Intelligence, Hefei Comprehensive National Science Center, Hefei 230026, China
| | - Qin Hu
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
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6
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Yin B, Zhou X, Li Y, Hu G, Wei W, Yang M, Jeong S, Deng W, Wu B, Cao Y, Huang B, Pan L, Yang X, Fu Z, Fang Y, Shen L, Yang C, Wu H, Lan L, Huang F, Cao Y, Duan C. Sensitive Organic Photodetectors With Spectral Response up to 1.3 µm Using a Quinoidal Molecular Semiconductor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310811. [PMID: 38358297 DOI: 10.1002/adma.202310811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 02/09/2024] [Indexed: 02/16/2024]
Abstract
Detecting short-wavelength infrared (SWIR) light has underpinned several emerging technologies. However, the development of highly sensitive organic photodetectors (OPDs) operating in the SWIR region is hindered by their poor external quantum efficiencies (EQEs) and high dark currents. Herein, the development of high-sensitivity SWIR-OPDs with an efficient photoelectric response extending up to 1.3 µm is reported. These OPDs utilize a new ultralow-bandgap molecular semiconductor featuring a quinoidal tricyclic electron-deficient central unit and multiple non-covalent conformation locks. The SWIR-OPD achieves an unprecedented EQE of 26% under zero bias and an even more impressive EQE of up to 41% under a -4 V bias at 1.10 µm, effectively pushing the detection limit of silicon photodetectors. Additionally, the low energetic disorder and trap density in the active layer lead to significant suppression of thermal-generation carriers and dark current, resulting in excellent detectivity (Dsh *) exceeding 1013 Jones from 0.50 to 1.21 µm and surpassing 1012 Jones even at 1.30 µm under zero bias, marking the highest achievements for OPDs beyond the silicon limit to date. Validation with photoplethysmography measurements, a spectrometer prototype in the 0.35-1.25 µm range, and image capture under 1.20 µm irradiation demonstrate the extensive applications of this SWIR-OPD.
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Affiliation(s)
- Bingyan Yin
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Xia Zhou
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
- School of New Energy, Ningbo University of Technology, Ningbo, 315336, P. R. China
| | - Yuyang Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, P. R. China
| | - Gangjian Hu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130015, P. R. China
| | - Wenkui Wei
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Mingqun Yang
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Seonghun Jeong
- Department of Energy Engineering, School of Energy and Chemical Engineering, Low Dimensional Carbon Materials Center, Perovtronics Research Center, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Wanyuan Deng
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Baoqi Wu
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Yunhao Cao
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Bo Huang
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Langheng Pan
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Xiaoru Yang
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Zhenyu Fu
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Yanjun Fang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, P. R. China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130015, P. R. China
| | - Changduk Yang
- Department of Energy Engineering, School of Energy and Chemical Engineering, Low Dimensional Carbon Materials Center, Perovtronics Research Center, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Hongbin Wu
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Linfeng Lan
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Fei Huang
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Yong Cao
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Chunhui Duan
- Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
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7
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Zhao D, Wang Y, Sun X, Wu X, Li B, Zhang S, Gao D, Liu B, Gong S, Li Z, Zhang C, Chen X, Xiao S, Yang S, Li Z, Zhu Z. Charge Management Enables Efficient Spontaneous Chromatic Adaptation Bipolar Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309827. [PMID: 38084461 DOI: 10.1002/smll.202309827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2023] [Revised: 11/28/2023] [Indexed: 05/18/2024]
Abstract
Solution-processed photodetectors have emerged as promising candidates for next-generation of visible-near infrared (vis-NIR) photodetectors. This is attributed to their ease of processing, compatibility with flexible substrates, and the ability to tune their detection properties by integrating complementary photoresponsive semiconductors. However, the limited performance continues to hinder their further development, primarily influenced by the difference of charge transport properties between perovskite and organic semiconductors. In this work, a perovskite-organic bipolar photodetectors (PDs) is introduced with multispectral responsivity, achieved by effectively managing charges in perovskite and a ternary organic heterojunction. The ternary heterojunction, incorporating a designed NIR guest acceptor, exhibits a faster charge transfer rate and longer carrier diffusion length than the binary heterojunction. By achieving a more balanced carrier dynamic between the perovskite and organic components, the PD achieves a low dark current of 3.74 nA cm-2 at -0.2 V, a fast response speed of <10 µs, and a detectivity of exceeding 1012 Jones. Furthermore, a bioinspired retinotopic system for spontaneous chromatic adaptation is achieved without any optical filter. This charge management strategy opens up possibilities for surpassing the limitations of photodetection and enables the realization of high-purity, compact image sensors with exceptional spatial resolution and accurate color reproduction.
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Affiliation(s)
- Dan Zhao
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yan Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Xianglang Sun
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
- Key Laboratory for Material Chemistry of Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xin Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Bo Li
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Shoufeng Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
- Department of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, P. R. China
| | - Danpeng Gao
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Baoze Liu
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Shaokuan Gong
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Zhen Li
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Chunlei Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Xihan Chen
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Shuang Xiao
- Center for Advanced Material Diagnostic Technology and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, P. R. China
| | - Shangfeng Yang
- Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhong'an Li
- Key Laboratory for Material Chemistry of Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zonglong Zhu
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, Guangdong, 518057, P. R. China
- Hong Kong Institute of Clean Energy, City University of Hong Kong, Kowloon, 999077, Hong Kong
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8
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Kim TH, Choi YK, Lee GM, Saeed MA, Jung BK, Lee MJ, Choi HJ, Oh SJ, Shim JW. Ultra-Low Noise Level Infrared Quantum Dot Photodiodes with Self-Screenable Polymeric Optical Window. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309028. [PMID: 37991324 DOI: 10.1002/adma.202309028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 11/20/2023] [Indexed: 11/23/2023]
Abstract
Quantum dot photodiodes (QPDs) have garnered significant attention because of their unparalleled near-infrared (NIR) detection capabilities, primarily attributable to their size-dependent bandgap tunability. Nevertheless, the broadband absorption spectrum of QPD engenders substantial noise floor within superfluous visible light regions, notably hindering their use in several emerging applications necessitating the detection of faint micro-light signals. To overcome these hurdles, a self-screenable NIR QPD featuring an internal optical filter with a thick polymeric interlayer to reduce electronic noise is demonstrated. This effectively screens out undesirable visible light regions while reducing the ionized defect owing to decreased density of state, yielding an extremely low dark current (≈1010 A cm-2 at V = -1 V). Consequently, the electronic noise spectral density is attained at levels below ≈10-27 -10-28 A2 Hz-1 , and responsivity (R) dropped to 92% within the visible light spectrum.
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Affiliation(s)
- Tae Hyuk Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Young Kyun Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Gyeong Min Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Muhammad Ahsan Saeed
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Min Jong Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Hyung Jin Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Jae Won Shim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
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9
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Xu M, Cui Y, Zhang T, Lu M, Yu Y. PbS QD-Coated Si Micro-Hole Array/Graphene vdW Schottky Near-Infrared Photodiode for PPG Heart Rate Measurement. SENSORS (BASEL, SWITZERLAND) 2023; 23:7214. [PMID: 37631750 PMCID: PMC10458064 DOI: 10.3390/s23167214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2023] [Revised: 08/09/2023] [Accepted: 08/14/2023] [Indexed: 08/27/2023]
Abstract
Near-infrared (NIR) photodetectors (PDs) have attracted much attention for use in noninvasive medical diagnosis and treatments. In particular, self-filtered NIR PDs are in high demand for a wide range of biomedical applications due to their ability for wavelength discrimination. In this work, we designed and then fabricated a Si micro-hole array/Graphene (Si MHA/Gr) van der Waals (vdW) Schottky NIR photodiode using a PbS quantum dot (QD) coating. The device exhibited a unique self-filtered NIR response with a responsivity of 0.7 A/W at -1 V and a response speed of 61 μs, which is higher than that seen without PbS QD coating and even in most previous Si/Gr Schottky photodiodes. The light trapping of the Si MHA and the PbS QD coating could be attributed to the high responsivity of the vdW photodiode. Furthermore, the presented NIR photodiode could also be integrated in photoplethysmography (PPG) for real-time heart rate (HR) monitoring. The extracted HR was in good accord with the values measured with the patient monitor-determined by analyzing the Fourier transform of the stable and reliable fingertip PPG waveform-suggesting its potential for practical applications.
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Affiliation(s)
- Mingyuan Xu
- School of Advanced Manufacturing, Nanchang University, Nanchang 330031, China;
| | - Yinghao Cui
- School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei 230009, China; (Y.C.); (T.Z.); (M.L.)
| | - Tao Zhang
- School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei 230009, China; (Y.C.); (T.Z.); (M.L.)
| | - Mengxue Lu
- School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei 230009, China; (Y.C.); (T.Z.); (M.L.)
| | - Yongqiang Yu
- School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei 230009, China; (Y.C.); (T.Z.); (M.L.)
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10
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Malinowski PE, Pejović V, Lieberman I, Kim JH, Siddik AB, Georgitzikis E, Lim MJ, Moreno Hagelsieb L, Hermans Y, Pintor Monroy I, Song W, Basak S, Gehlhaar R, De Roose F, Siskos A, Papadopoulos N, Thijs S, Vershooten T, Chandrasekaran N, Li Y, Soussan P, Genoe J, Heremans P, Lee J, Cheyns D. Image sensors using thin-film absorbers. APPLIED OPTICS 2023; 62:F21-F30. [PMID: 37707127 DOI: 10.1364/ao.485552] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Accepted: 02/26/2023] [Indexed: 09/15/2023]
Abstract
Image sensors are must-have components of most consumer electronics devices. They enable portable camera systems, which find their way into billions of devices annually. Such high volumes are possible thanks to the complementary metal-oxide semiconductor (CMOS) platform, leveraging wafer-scale manufacturing. Silicon photodiodes, at the core of CMOS image sensors, are perfectly suited to replicate human vision. Thin-film absorbers are an alternative family of photoactive materials, distinguished by the layer thickness comparable with or smaller than the wavelength of interest. They allow design of imagers with functionalities beyond Si-based sensors, such as transparency or detectivity at wavelengths above Si cutoff (e.g., short-wave infrared). Thin-film image sensors are an emerging device category. While intensive research is ongoing to achieve sufficient performance of thin-film photodetectors, to our best knowledge, there have been few complete studies on their integration into advanced systems. In this paper, we will describe several types of image sensors being developed at imec, based on organic, quantum dot, and perovskite photodiode and show their figures of merit. We also discuss the methodology for selecting the most appropriate sensor architecture (integration with thin-film transistor or CMOS). Application examples based on imec proof-of-concept sensors are demonstrated to showcase emerging use cases.
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Jacoutot P, Scaccabarozzi AD, Nodari D, Panidi J, Qiao Z, Schiza A, Nega AD, Dimitrakopoulou-Strauss A, Gregoriou VG, Heeney M, Chochos CL, Bakulin AA, Gasparini N. Enhanced sub-1 eV detection in organic photodetectors through tuning polymer energetics and microstructure. SCIENCE ADVANCES 2023; 9:eadh2694. [PMID: 37285428 DOI: 10.1126/sciadv.adh2694] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2023] [Accepted: 05/04/2023] [Indexed: 06/09/2023]
Abstract
One of the key challenges facing organic photodiodes (OPDs) is increasing the detection into the infrared region. Organic semiconductor polymers provide a platform for tuning the bandgap and optoelectronic response to go beyond the traditional 1000-nanometer benchmark. In this work, we present a near-infrared (NIR) polymer with absorption up to 1500 nanometers. The polymer-based OPD delivers a high specific detectivity D* of 1.03 × 1010 Jones (-2 volts) at 1200 nanometers and a dark current Jd of just 2.3 × 10-6 ampere per square centimeter at -2 volts. We demonstrate a strong improvement of all OPD metrics in the NIR region compared to previously reported NIR OPD due to the enhanced crystallinity and optimized energy alignment, which leads to reduced charge recombination. The high D* value in the 1100-to-1300-nanometer region is particularly promising for biosensing applications. We demonstrate the OPD as a pulse oximeter under NIR illumination, delivering heart rate and blood oxygen saturation readings in real time without signal amplification.
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Affiliation(s)
- Polina Jacoutot
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Alberto D Scaccabarozzi
- Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, via Raffaele Rubattino 81, Milano 20134, Italy
| | - Davide Nodari
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Julianna Panidi
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Zhuoran Qiao
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Andriana Schiza
- Institute of Chemical Biology, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens 11635, Greece
| | - Alkmini D Nega
- Clinical Cooperation Unit Nuclear Medicine, German Cancer Research Center, 69120 Heidelberg, Germany
| | | | - Vasilis G Gregoriou
- Institute of Chemical Biology, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens 11635, Greece
- Advent Technologies SA, Stadiou Street, Platani, Rio, Patras 26504, Greece
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Christos L Chochos
- Institute of Chemical Biology, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens 11635, Greece
- Advent Technologies SA, Stadiou Street, Platani, Rio, Patras 26504, Greece
| | - Artem A Bakulin
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Nicola Gasparini
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
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