Giant Fluctuations of Coulomb Drag in a Bilayer System

Signature of quantum interference effect in inter-layer Coulomb drag in graphene-based electronic double-layer systems

The distinguishing feature of a quantum system is interference arising from the wave mechanical nature of particles which is clearly central to macroscopic electronic properties. Here, we report the signature of quantum interference effect in inter-layer transport process. Via systematic magneto-drag experiments on graphene-based electronic double-layer systems, we observe low-field correction to the Coulomb-scattering-dominated inter-layer drag resistance in a wide range of temperature and carrier density, with its characteristics sensitive to the band topology of graphene layers. These observations can be attributed to a new type of quantum interference between drag processes, with the interference pathway comprising different carrier diffusion paths in the two constituent conductors. The emergence of such effect relies on the formation of superimposing planar diffusion paths, among which the impurity potentials from intermediate insulating spacer play an essential role. Our findings establish an ideal platform where the interplay between quantum interference and many-body interaction is essential.

Drag Voltages in a Superconductor/Insulator/Ferromagnet Trilayer

The interaction between two spatially separated systems is of strong interest in order to study a wide class of unconventional effects at cryogenic temperatures. Here we report on drag transverse voltage effects in multilayered systems containing superconducting and ferromagnetic materials. The sample under test is a conventional superconductor/insulator/ferromagnet (S/I/F) trilayer in a cross configuration. S/F as well as S/N (here N stands for normal metal) bilayers in the same geometry are also analyzed for comparison. Current-voltage (I-V) characteristics measured at T = 4.2 K in the presence of a perpendicular magnetic field show strong peculiarities related to the interaction between the layers. The results are interpreted in terms of interaction effects between the layers.

Room-Temperature Mesoscopic Fluctuations and Coulomb Drag in Multilayer WSe2

Mesoscopic fluctuations, manifesting the quantum interference (QI) of electrons, have been theoretically proposed in bilayer Coulomb drag systems. Unfortunately, these phenomena are usually observed at cryogenic temperatures, which severely limits their novel physics for pragmatic applications. In this paper, observation of room-temperature QI and Coulomb drag in a multilayer WSe₂ transistor is reported via graphene contacts separately at its top and bottom layers. The central layers of WSe₂ act as an insulating region with a width of few nanometers, which spatially separates the top and bottom conducting channels and provides a strong Coulomb interaction between them, leading to large conductance oscillations at room temperature. The gradual suppression of the oscillations with the increase in the applied magnetic field and/or injected current further confirms the QI phenomenon. With the decrease in temperature, the Coulomb drag effect is exhibited in the system owing to the increased thickness of the insulating region. This study reveals a novel approach for realization of advanced quantum electronics operating at high temperatures.

Quantum Transport Detected by Strong Proximity Interaction at a Graphene-WS2 van der Waals Interface

Magnetotransport measurements demonstrate that graphene in a van der Waals heterostructure is a sensitive probe of quantum transport in an adjacent WS2 layer via strong Coulomb interactions. We observe a large low-field magnetoresistance (≫ e(2)/h) and a -ln T temperature dependence of the resistance. In-plane magnetic field resistance indicates the origin is orbital and nonclassical. We demonstrate a strong electron-hole asymmetry in the mobility and coherence length of graphene demonstrating the presence of localized Coulomb interactions with ionized donors in the WS2 substrate, which ultimately leads to screening as the Fermi level of graphene is tuned toward the conduction band of WS2. This leads us to conclude that graphene couples to quantum localization processes in WS2 via the Coulomb interaction and results in the observed signatures of quantum transport. Our results show that theoretical descriptions of the van der Waals interface should not ignore localized strong correlations.

Theory for electric dipole superconductivity with an application for bilayer excitons

Exciton superfluid is a macroscopic quantum phenomenon in which large quantities of excitons undergo the Bose-Einstein condensation. Recently, exciton superfluid has been widely studied in various bilayer systems. However, experimental measurements only provide indirect evidence for the existence of exciton superfluid. In this article, by viewing the exciton in a bilayer system as an electric dipole, we derive the London-type and Ginzburg-Landau-type equations for the electric dipole superconductors. By using these equations, we discover the Meissner-type effect and the electric dipole current Josephson effect. These effects can provide direct evidence for the formation of the exciton superfluid state in bilayer systems and pave new ways to drive an electric dipole current.

Influences of Surface and Ionic Properties on Electricity Generation of an Active Transducer Driven by Water Motion

In this Letter, we discuss the surface, ionic properties, and scale-up potential of an active transducer that generated electricity from natural water motion. When a liquid contacts a solid surface, an electrical double layer (EDL) is always formed at the solid/liquid interface. By modulating the EDL, the active transducer could generate a peak voltage of ∼3 V and a peak power of ∼5 μW. Interestingly, there were specific salinities of solution droplets that showed maximum performance and different characteristics according to the ions' nature. Analyzing the results macroscopically, we tried to figure out the origins of the active transducing precipitated by ions dynamics. Also, we demonstrated the scale-up potential for practical usage by multiple electrode design.

Generating electricity by moving a droplet of ionic liquid along graphene

Since the early nineteenth century, it has been known that an electric potential can be generated by driving an ionic liquid through fine channels or holes under a pressure gradient. More recently, it has been reported that carbon nanotubes can generate a voltage when immersed in flowing liquids, but the exact origin of these observations is unclear, and generating electricity without a pressure gradient remains a challenge. Here, we show that a voltage of a few millivolts can be produced by moving a droplet of sea water or ionic solution over a strip of monolayer graphene under ambient conditions. Through experiments and density functional theory calculations, we find that a pseudocapacitor is formed at the droplet/graphene interface, which is driven forward by the moving droplet, charging and discharging at the front and rear of the droplet. This gives rise to an electric potential that is proportional to the velocity and number of droplets. The potential is also found to be dependent on the concentration and ionic species of the droplet, and decreases sharply with an increasing number of graphene layers. We illustrate the potential of this electrokinetic phenomenon by using it to create a handwriting sensor and an energy-harvesting device.

Coulomb drag in graphene near the Dirac point

We study Coulomb drag in graphene near the Dirac point, focusing on the regime of interaction-dominated transport. We establish a novel, graphene-specific mechanism of Coulomb drag based on fast interlayer thermalization, inaccessible by standard perturbative approaches. Using the quantum kinetic equation framework, we derive a hydrodynamic description of transport in double-layer graphene in terms of electric and energy currents. In the clean limit the drag becomes temperature independent. In the presence of disorder the drag coefficient at the Dirac point remains nonzero due to higher-order scattering processes and interlayer disorder correlations. At low temperatures (diffusive regime) these contributions manifest themselves in the peak in the drag coefficient centered at the neutrality point with a magnitude that grows with lowering temperature.

Transition between electron localization and antilocalization in graphene

We show that quantum interference in graphene can result in antilocalization of charge carriers--an increase of the conductance, which is detected by a negative magnetoconductance. We demonstrate that depending on experimental conditions one can observe either weak localization or antilocalization of carriers in graphene. A transition from localization to antilocalization occurs when the carrier density is decreased and the temperature is increased. We show that quantum interference in graphene can survive at high temperatures, up to T approximately 200 K, due to weak electron-phonon scattering.

Coulomb drag in the exciton regime in electron-hole bilayers

Electron-hole bilayers are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the barrier between the layers is reduced. Coulomb drag measurements on devices with a 30 nm barrier are consistent with two weakly coupled 2D Fermi systems where the drag decreases with temperature. For a 20 nm barrier, however, we observe an increase in the drag resistance as the temperature is reduced when a current is driven in the electron layer and voltage measured in the hole layer. These results indicate the onset of strong coupling possibly due to exciton formation or phenomena related to exciton condensation.

Coulomb drag in quantum circuits

We study the drag effect in a system of two electrically isolated quantum point contacts, coupled by Coulomb interactions. Drag current exhibits maxima as a function of quantum point contacts gate voltages when the latter are tuned to the transitions between quantized conductance plateaus. In the linear regime this behavior is due to enhanced electron-hole asymmetry near an opening of a new conductance channel. In the nonlinear regime the drag current is proportional to the shot noise of the driving circuit, suggesting that the Coulomb drag experiments may be a convenient way to measure the quantum shot noise. Remarkably, the transition to the nonlinear regime may occur at driving voltages substantially smaller than the temperature.

Coulomb drag at zero temperature

We show that the Coulomb drag effect exhibits saturation at small temperatures, when calculated to the third order in the interlayer interactions. The zero-temperature transresistance is of the order h/(e2g3), where g is the dimensionless sheet conductance. The effect is therefore the strongest in low mobility samples. This behavior should be contrasted with the conventional (second order) prediction that the transresistance scales as a certain power of temperature and is (almost) mobility independent. The result demonstrates that the zero-temperature drag is not an unambiguous signature of a strongly coupled state in double-layer systems.