Materials science. How nanowires grow

Chemical vapor deposition of germanium-rich CrGe x nanowires

Chemical vapor deposition was applied to synthetize nanostructured deposits containing several sorts of nanoobjects (i.e., nanoballs, irregular particles, and nanowires). Analytical techniques, that is, high-resolution transmission electron microscopy, scanning electron microscopy, electron dispersive X-ray analysis, selected area electron diffraction, and X-ray photoelectron spectroscopy, showed that unlike nanoballs and particles composed of crystalline germanium, the layer was made of chromium germanide CrGe _x . The nanowires possessed a complex structure, namely a thin crystalline germanium core and amorphous CrGe _x coating. The composition of the nanowire coating was [Cr]/[Ge] = 1:(6-7). The resistance of the nanowire-deposit system was estimated to be 2.7 kΩ·cm using an unique vacuum contacting system.

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200⁻600 nm variable periodicity), with high quality (~2 Å surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions' spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.

Single-crystal TiO2 nanowires by seed assisted thermal oxidation of Ti foil: synthesis and photocatalytic properties

TiO₂ nanowires growth was investigated varying the synthesis parameters. Nanowires demonstrated improved photocatalytic activity, especially when treated in forming gas.

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect

The physical origin of the strong emission line at 3.45 eV and broadening yellow luminescence (YL) band centered at 2.2 eV in GaN nanowire (NW) has been debated for many years. Here, we solve these two notable issues by using state-of-the-art first-principles calculations based on many-body perturbation theory combined with polarization-resolved experiments. We demonstrate that the ubiquitous surface "microwires" with amazing characteristics, i.e., the outgrowth nanocrystal along the NW side wall, are vital and offer a new perspective to provide insight into some puzzles in epitaxy materials. Furthermore, inversion of the top valence bands, in the decreasing order of crystal-field split-off hole (CH) and heavy/light hole, results in the optical transition polarized along the NW axis due to quantum confinement. The optical emission from bound excitons localized around the surface microwire to CH band is responsible for the 3.45 eV line with E∥c polarization. Both gallium vacancy and carbon-related defects tend to assemble at the NW surface layer, determining the broadening YL band.

Step-flow kinetics model for the vapor-solid-solid Si nanowires growth

Vapor-solid-solid (VSS) process has recently received continued attention as an alternative to grow Si nanowire. In comparison with common vapor-liquid-solid (VLS) growth with liquid catalyst, VSS growth can prevent the catalyst species from incorporating into nanowires with deep-level impurity, and achieve the compositionally abrupt interfaces by restraining the so-called "reservoir effect". However, despite the huge advances in experimental observations with in situ electron microscopy, VSS growth still remains much less understood in theory. Here, we developed a general mass-transport-limited kinetic model to describe the VSS growth process of Si nanowires by considering three surface diffusion processes and a slow interface diffusion process, where the former determines the atoms supplies way, while the latter dominates the growth of nanowires. The present model is not only well consistent with the available experimental data of Si nanowire, but also gives a clear physical image for the successive side-to-side ledge flow VSS growth.

From the nucleation of wiggling Au nanostructures to the dome-shaped Au droplets on GaAs (111)A, (110), (100), and (111)B

In this paper, the systematic evolution process of self-assembled Au droplets is successfully demonstrated on GaAs (111)A, (110), (100), and (111)B. On various GaAs substrates, self-assembled Au clusters begin to nucleate at around 300°C, and then, they develop into wiggly Au nanostructures at 350°C. Between 400°C and 550°C, the self-assembled dome-shaped Au droplets with fine uniformity are fabricated with various sizes and densities based on the Volmer-Weber growth mode. Depending on the annealing temperature, the size including the average height and lateral diameter and the density of Au droplets show the opposite trend of increased size with correspondingly decreased density as a function of the annealing temperature due to the difference in the diffusion length of adatoms at varied activation energy. Under an identical growth condition, depending on the surface index, the size and density of Au droplets show a clear distinction, observed throughout the temperature range. The results are systematically analyzed and discussed in terms of atomic force microscopy (AFM) images, cross-sectional line profiles, and Fourier filter transform (FFT) power spectra as well as the summary plots of the size and density.

Improvement of crystallization of borazine-derived boron nitride using small amounts of Fe or Ni nanoparticles

Homogenously dispersed Fe and Ni nanoparticles (NPs) are introduced into boron nitride (BN) by pyrolysis of cured borazine containing soluble ferrocene or nickelocene. The crystallization of the borazine-derived BN is significantly improved by using no more than 1 wt% NPs. X-ray diffraction (XRD) suggests that the improved BN obtained at 1200 °C exhibits a higher degree of crystallization close to that obtained at 1600 °C without additives. Transmission electron microscopy (TEM) indicates the formation of Fe or Ni NP-core multilayer BN spheres embedded in amorphous BN, and a corresponding core-shell model is suggested. The Ni NPs exhibit a higher crystallization than Fe NPs, possibly due to the higher solubility of boron in Ni NPs at elevated temperatures. In addition, we discuss the mechanisms by which Fe and Ni NPs improve the crystallization of BN from borazine.

Solution-based synthesis of wurtzite Cu2ZnSnS4 nanoleaves introduced by α-Cu2S nanocrystals as a catalyst

Cu2ZnSnS4 is a promising solar absorbing material in solar cells due to its high absorption coefficient and abundance on earth. We have demonstrated that wurtzite Cu2ZnSnS4 nanoleaves could be synthesized through a facile solution-based method. Detailed investigation of the growth process indicates that α-Cu2S nanocrystals are first formed and then serve as a catalyst to introduce the Cu, Zn, and Sn species into the nanoleaf growth for fast ionic conduction. The structure of the as-synthesized nanoleaves is characterized by powder X-ray diffraction, high-resolution transmission electron microscopy, fast Fourier transform, and energy dispersive X-ray spectroscopy mapping. Photoresponses of Cu2ZnSnS4 nanoleaves are evaluated by I-V curves of a Cu2ZnSnS4 nanoleaf film. It is believed that the enhancement of the photoresponse current of the Cu2ZnSnS4 nanoleaf film can be attributed to fast carrier transport due to the single crystalline nature and enhanced light absorption resulting from larger absorption areas of the Cu2ZnSnS4 nanoleaves.

Controlled synthesis of ultrathin ZnO nanowires using micellar gold nanoparticles as catalyst templates

We demonstrate a simple and effective approach to control the diameter of ultrathin ZnO nanowires with high aspect ratios and high densities over large areas. Diblock copolymer-based nanoparticle arrays exhibiting a high degree of hexagonal order and offering easy control of particle size (typically 1-10 nm) and interparticle spacing (25-150 nm) are utilized as nanocatalysts for the subsequent growth of semiconductor nanowires. The as-grown ZnO nanowires exhibit a single crystal hexagonal wurtzite structure and grow along the [0002] direction. Facetted catalyst particles were observed at the tip of the nanowires after synthesis, thus suggesting a catalyst-assisted vapor-solid-solid (VSS) rather than a vapor-liquid-solid (VLS) growth mechanism, the latter being frequently used in semiconductor nanowire production. Such a growth process allows us to easily prepare ultrathin ZnO nanowires with tunable diameters well below 10 nm by taking advantage of the inherent size control of the micellar method during deposition of the catalyst nanoparticles. Raman spectroscopy reveals a phonon confinement effect as the diameter of nanowires decreases. Photoluminescence spectra of these ultrathin nanowires indicate a blue shift of the free excitons and their phonon replicas by 37 meV induced by quantum confinement.

Wurtzite CuInS₂ and CuInxGa₁-xS₂ nanoribbons: synthesis, optical and photoelectrical properties

Single crystalline wurtzite ternary and quaternary semiconductor nanoribbons (CuInS(2), CuIn(x)Ga(1-x)S(2)) were synthesized through a solution-based method. The structure and composition of the nanoribbons were characterized by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), the corresponding fast Fourier transform (FFT) and nanoscale-resolved elemental mapping. Detailed investigation of the growth mechanism by monitoring the structures and morphologies of the nanoribbons during the growth indicates that Cu(1.75)S nanocrystals are formed first and act as a catalyst for the further growth of the nanoribbons. The high mobility of Cu(+) promotes the generation of Cu(+) vacancies in Cu(1.75)S, which will facilitate the diffusion of Cu, In or Ga species from solution into Cu(1.75)S to reach supersaturated states. The supersaturated species in the Cu(1.75)S catalyst, Cu-In-S and Cu-In-Ga-S species, start to condense and crystallize to form wurtzite CuInS(2) or CuIn(x)Ga(1-x)S(2) phases, firstly resulting in two-sided nanoparticles. Successive crystallizations gradually impel the Cu(1.75)S catalyst head forward and prolong the length of the CuInS(2) or CuIn(x)Ga(1-x)S(2) body, forming heterostructured nanorods and thus nanoribbons. The optical band gaps of CuIn(x)Ga(1-x)S(2) nanoribbons can be continuously adjusted between 1.44 eV and 1.91 eV, depending on the Ga concentration in nanoribbons. The successful preparation of those ternary and quaternary semiconductor nanoribbons provide us an opportunity to study their photovoltaic properties. The primary photoresponsive current measurements demonstrate that wurtzite CuIn(x)Ga(1-x)S(2) nanoribbons are excellent photoactive materials. Furthermore, this facile method could open a new way to synthesize other various nano-structured ternary and quaternary semiconductors, such as CuInSe(2) and CuIn(x)Ga(1-x)Se(2), for applications in solar cells and other fields.

Sandwich-like Cu(1.94)S-ZnS-Cu(1.94)S nanoheterostructure: structure, formation mechanism and localized surface plasmon resonance behavior

In this communication, a thermolysis route is developed to synthesize novel Cu(1.94)S-ZnS-Cu(1.94)S nanoheterostructures with interesting sandwich-like architectures, taking Cu(1.94)S nanoplates as precursors. Evidently, the trimeric nanostructure is formed by a three-stage process, which includes the Zn-oleate induced assembling of Cu(1.94)S nanoplate couples, the heteronucleation and growth of a ZnS layer between two Cu(1.94)S plates dominated by interfacial diffusion, and the catalyst assisted axial growth of ZnS nanorod following the solution-liquid-solid mechanism. With epitaxial growth of ZnS nanocrystal between two Cu(1.94)S nanoplates, the localized surface plasmon resonance frequency of Cu(1.94)S shifts from 1875 to 1323 nm, indicating that this new material is potentially applicable as a light absorbing agent in laser photothermal therapy. The reported growth mechanism may provide new strategies for designing and fabricating various technologically important polymeric nanoheterostructures.

Bulk metallic glass nanowire architecture for electrochemical applications

Electrochemical devices have the potential to pose powerful solutions in addressing rising energy demands and counteracting environmental problems. However, currently, these devices suffer from meager performance due to poor efficiency and durability of the catalysts. These suboptimal characteristics have hampered widespread commercialization. Here we report on Pt(57.5)Cu(14.7)Ni(5.3)P(22.5) bulk metallic glass (Pt-BMG) nanowires, whose novel architecture and outstanding durability circumvent the performance problems of electrochemical devices. We fabricate Pt-BMG nanowires using a facile and scalable nanoimprinting approach to create dealloyed high surface area nanowire catalysts with high conductivity and activity for methanol and ethanol oxidation. After 1000 cycles, these nanowires maintain 96% of their performance-2.4 times as much as conventional Pt/C catalysts. Their properties make them ideal candidates for widespread commercial use such as for energy conversion/storage and sensors.

Vapor-liquid-solid grown silica nanowire based electrochemical glucose biosensor

Vapor-liquid-solid (VLS) grown silica nanowires (SiO(2)NWs) have been deposited electrophoretically on a gold electrode and utilized for covalent immobilization of glucose oxidase (GOx). Covalent binding has been achieved via 3-aminopropyltriethoxysilane (APTES) modification and N-ethyl-N'-(3-dimethylaminopropyl) carbodiimide and N-hydroxysuccinimide chemistry. Scanning electron microscopy, transmission electron microscopy and cyclic voltammetry techniques have been used to characterize SiO(2)NW and GOx/APTES/SiO(2)NW/Au bioelectrode. Electrochemical studies reveal that SiO(2)NW increases the effective electro-active surface area thus resulting in higher loading of enzyme. Response characteristics show linearity in the range of interest 25-300 mg dl(-1), with a detection limit of 11 mg dl(-1), sensitivity: 0.463 µA (mg dl(-1))(-1) and regression coefficient of 0.992.

From shelled Ge nanowires to SiC nanotubes

Shelled germanium nanowires up to 100 nm in diameter and several micrometers in length were prepared by low pressure chemical vapor deposition (LPCVD) of tris(trimethylsilyl)germane (SiMe(3))(3)GeH. Vapors of the precursor were deposited on tantalum substrates in an oven at 365 degrees C. Subsequently, the products were annealed at 700 degrees C in vacuum. The wires consist of a crystalline Ge core surrounded by a two-layer jacket. The presence of hexagonal Ge in the core was documented in some of the nanowires. The inner jacket is formed by amorphous germanium, the outer part by an Si/C material. By annealing at 900 degrees C, germanium in the core is expelled and nanotubes formed by the Si/C material remain. The samples were studied by SEM, HRTEM, EDX, FTIR and Raman spectroscopy, and the XRD technique.

Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties

We report the nanocluster-catalyzed growth of ultralong and highly uniform single-crystalline silicon nanowires (SiNWs) with millimeter-scale lengths and aspect ratios up to approximately 100,000. The average SiNW growth rate using disilane (Si 2H 6) at 400 degrees C was 31 microm/min, while the growth rate determined for silane (SiH 4) reactant under similar growth conditions was 130 times lower. Transmission electron microscopy studies of millimeter-long SiNWs with diameters of 20-80 nm show that the nanowires grow preferentially along the 110 direction independent of diameter. In addition, ultralong SiNWs were used as building blocks to fabricate one-dimensional arrays of field-effect transistors (FETs) consisting of approximately 100 independent devices per nanowire. Significantly, electrical transport measurements demonstrated that the millimeter-long SiNWs had uniform electrical properties along the entire length of wires, and each device can behave as a reliable FET with an on-state current, threshold voltage, and transconductance values (average +/-1 standard deviation) of 1.8 +/- 0.3 microA, 6.0 +/- 1.1 V, 210 +/- 60 nS, respectively. Electronically uniform millimeter-long SiNWs were also functionalized with monoclonal antibody receptors and used to demonstrate multiplexed detection of cancer marker proteins with a single nanowire. The synthesis of structurally and electronically uniform ultralong SiNWs may open up new opportunities for integrated nanoelectronics and could serve as unique building blocks linking integrated structures from the nanometer through millimeter length scales.

The growth of small diameter silicon nanowires to nanotrees

In this work we have studied a way to control the growth of small diameter silicon nanowires by the vapour-liquid-solid (VLS) mode. We have developed a method to deposit colloids with good density control, which is a key point for control of the nanowire (NW) diameter. We also show the high dependence of the allowed growth diameter on the growth conditions, opening the door to the realization of as-grown 2 nm silicon NWs. Finally we have developed a smart way to realize nanotrees in the same run, by tuning the growth conditions and using gold on the sidewall of nanowires, without the need for two catalyst deposition steps.