Small Feature-Size Transistors Based on Low-Dimensional Materials: From Structure Design to Nanofabrication Techniques

For several decades after Moore's Law is proposed, there is a continuous effort to reduce the feature-size of transistors. However, as the size of transistors continues to decrease, numerous challenges and obstacles including severe short channel effects (SCEs) are emerging. Recently, low-dimensional materials have provided new opportunities for constructing small feature-size transistors due to their superior electrical properties compared to silicon. Here, state-of-the-art low-dimensional materials-based transistors with small feature-sizes are reviewed. Different from other works that mainly focus on material characteristics of a specific device structure, the discussed topics are utilizing device structure design including vertical structure and nano-gate structure, and nanofabrication techniques to achieve small feature-sizes of transistors. A comprehensive summary of these small feature-size transistors is presented by illustrating their operation mechanism, relevant fabrication processes, and corresponding performance parameters. Besides, the role of small feature-size transistors based on low-dimensional materials in further reducing the small footprint is also clarified and their cutting-edge applications are highlighted. Finally, a comparison and analysis between state-of-art transistors is made, as well as a glimpse into the future research trajectory of low dimensional materials-based small feature-size transistors is briefly outlined.

Enhanced Thermal Conductivity of Single-Walled Carbon Nanotube with Axial Tensile Strain Enabled by Boron Nitride Nanotube Anchoring

Thermal conductivity measurements are conducted by optothermal Raman technique before and after the introduction of an axial tensile strain in a suspended single-walled carbon nanotube (SWCNT) through end-anchoring by boron nitride nanotubes (BNNTs). Surprisingly, the axial tensile strain (<0.4 %) in SWCNT results in a considerable enhancement of its thermal conductivity, and the larger the strain, the higher the enhancement. Furthermore, the thermal conductivity reduction with temperature is much alleviated for the strained nanotube compared to previously reported unstrained cases. The thermal conductivity of SWCNT increases with its length is also observed.

Aligned carbon nanotube-based electronics on glass wafer

Carbon nanotubes (CNTs), due to excellent electronic properties, are emerging as a promising semiconductor for diverse electronic applications with superiority over silicon. However, until now, the supposed superiority of CNTs by "head-to-head" comparison within a well-defined voltage range remains unrealized. Here, we report aligned CNT (ACNT)-based electronics on a glass wafer and successfully develop a 250-nm gate length ACNT-based field-effect transistor (FET) with an almost identical transfer curve to a "90-nm" node silicon device, indicating a three- to four-generation superiority. Moreover, a record gate delay of 9.86 ps is achieved by our ring oscillator, which exceeds silicon even at a lower supply voltage. Furthermore, the fabrication of basic logic gates indicates the potential for further digital integrated circuits. All of these results highlight ACNT-based FETs on the glass wafer as an effective solution/platform for further development of CNT-based electronics.

Creating covalent bonds between Cu and C at the interface of metal/open-ended carbon nanotubes

The unique electrical properties of carbon nanotubes (CNTs) are highly desired in many technological applications. Unfortunately, in practice, the electrical conductivity of most CNTs and their assemblies has fallen short of expectations. One reason for this poor performance is that electrical resistance develops at the interface between carbon nanomaterials and metal surfaces when traditional metal-metal type contacts are employed. Here, a method for overcoming this resistance using covalent bond formation between open-ended CNTs and Cu surfaces is investigated experimentally and supported by theoretical calculations. The open-ended CNTs are vertically oriented compared to the substrate and have carboxylic functional groups that react with aminophenyl groups (linkers) grafted on metal surfaces. The covalent bond formation, crosslinking carboxylic and amine, via amide bond formation occurs at 120 °C. The covalent bonding nature of the aminophenyl linker is demonstrated theoretically using (100), (110), and (111) Cu surfaces, and bridge-like bond formation between carbon and two adjacent Cu atoms is revealed. The electrical conductivity calculated for a single intramolecular-type junction supports covalent bond formation between Cu and CNTs. Experimentally, the robustness of the covalent bonding between vertically oriented CNTs is tested by exposing CNTs on Cu to sonication, which reveals that CNTs remain fixed to the Cu supports. Since bonding CNTs to metals was performed at low temperatures, the reported method of covalent bond formation is expected to facilitate the application of CNTs in multiple fields, including electronics.

Direct Writing of Aligned Carbon Nanotubes across a Trench

Aligned and suspended carbon nanotubes can outperform randomly oriented networks in electronic biosensing and thin-film electronics. However, carbon nanotubes tend to bundle and form random networks. Here, we show that carbon nanotubes spontaneously align in an ammonium deoxycholate surfactant gel even under low shear forces, allowing direct writing and printing of nanotubes into electrically conducting wires and aligned thin layers across trenches. To demonstrate its application potential, we directly printed arrays of disposable electrical biosensors, which show femtomolar sensitivity in the detection of DNA and SARS-CoV-2 RNA.

Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors

Carbon nanotube (CNT) transistors demonstrate high mobility but also experience off-state leakage due to the small effective mass and band gap. The lower limit of off-current (IMIN) was measured in electrostatically doped CNT metal-oxide-semiconductor field-effect transistors (MOSFETs) across a range of band gaps (0.37 to 1.19 eV), supply voltages (0.5 to 0.7 V), and extension doping levels (0.2 to 0.8 carriers/nm). A nonequilibrium Green's function (NEGF) model confirms the dependence of IMIN on CNT band gap, supply voltage, and extension doping level. A leakage current design space across CNT band gap, supply voltage, and extension doping is projected based on the validated NEGF model for long-channel CNT MOSFETs to identify the appropriate device design choices. The optimal extension doping and CNT band gap design choice for a target off-current density are identified by including on-current projection in the leakage current design space. An extension doping level >0.5 carrier/nm is required for optimized on-current.

Parameters Affecting Interfacial Assembly and Alignment of Nanotubes

Tangential flow interfacial self-assembly (TaFISA) is a promising scalable technique enabling uniformly aligned carbon nanotubes for high-performance semiconductor electronics. In this process, flow is utilized to induce global alignment in two-dimensional nematic carbon nanotube assemblies trapped at a liquid/liquid interface, and these assemblies are subsequently deposited on target substrates. Here, we present an observational study of experimental parameters that affect the interfacial assembly and subsequent aligned nanotube deposition. We specifically study the water contact angle (WCA) of the substrate, nanotube ink composition, and water subphase and examine their effects on liquid crystal defects, overall and local alignment, and nanotube bunching or crowding. By varying the substrate chemical functionalization, we determine that highly aligned, densely packed, individualized nanotubes deposit only at relatively small WCA between 35 and 65°. At WCA (< 10°), high nanotube bunching or crowding occurs, and the film is nonuniform, while aligned deposition ceases to occur at higher WCA (>65°). We find that the best alignment, with minimal liquid crystal defects, occurs when the polymer-wrapped nanotubes are dispersed in chloroform at a low (0.6:1) wrapper polymer to nanotube ratio. We also demonstrate that modifying the water subphase through the addition of glycerol not only improves overall alignment and reduces liquid crystal defects but also increases local nanotube bunching. These observations provide important guidance for the implementation of TaFISA and its use toward creating technologies based on aligned semiconducting carbon nanotubes.

Biotemplated precise assembly approach toward ultra-scaled high-performance electronics

Structural DNA nanotechnology can be programmed into complex designer structures with molecular precision for directing a wide range of inorganic and biological materials. However, the use of DNA-templated approaches for the fabrication and performance requirements of ultra-scaled semiconductor electronics is limited by its assembly disorder and destructive interface composition. In this protocol, using carbon nanotubes (CNTs) as model semiconductors, we provide a stepwise process to build ultra-scaled, high-performance field-effect transistors (FETs) from micron-scale three-dimensional DNA templates. We apply the approach to assemble CNT arrays with uniform pitches scaled between 24.1 and 10.4 nm with yields of more than 95%, which exceeds the resolution limits of conventional lithography. To achieve highly clean CNT interfaces, we detail a rinsing-after-fixing step to remove residual DNA template and salt contaminations present around the contact and the channel regions, without modifying the alignment of the CNT arrays. The DNA-templated CNT FETs display both high on-state current (4-15 μA per CNT) and small subthreshold swing (60-100 mV per decade), which are superior to previous examples of biotemplated electronics and match the performance metrics of high-performance, silicon-based electronics. The scalable assembly of defect-free three-dimensional DNA templates requires 1 week and the CNT arrays can be synthesized within half a day. The interface engineering requires 1-2 d, while the fabrication of high-performance FET and logic gate circuits requires 2-4 d. The structural and performance characterizations of molecular-precise DNA self-assembly and high-performance electronics requires 1-2 d. The protocol is suited for users with expertise in DNA nanotechnology and semiconductor electronics.

High-Density Vertical Transistors with Pitch Size Down to 20 nm

Vertical field effect transistors (VFETs) have attracted considerable interest for developing ultra-scaled devices. In particular, individual VFET can be stacked on top of another and does not consume additional chip footprint beyond what is needed for a single device at the bottom, representing another dimension for high-density transistors. However, high-density VFETs with small pitch size are difficult to fabricate and is largely limited by the trade-offs between drain thickness and its conductivity. Here, a simple approach is reported to scale the drain to sub-10 nm. By combining 7 nm thick Au with monolayer graphene, the hybrid drain demonstrates metallic behavior with low sheet resistance of ≈100 Ω sq-1 . By van der Waals laminating the hybrid drain on top of 3 nm thick channel and scaling gate stack, the total VFET pitch size down to 20 nm and demonstrates a higher on-state current of 730 A cm-2 . Furthermore, three individual VFETs together are vertically stacked within a vertical distance of 59 nm, representing the record low pitch size for vertical transistors. The method pushes the scaling limit and pitch size limit of VFET, opening up a new pathway for high-density vertical transistors and integrated circuits.

The future transistors

The metal-oxide-semiconductor field-effect transistor (MOSFET), a core element of complementary metal-oxide-semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past six decades the physical gate length of MOSFETs has been scaled to sub-20 nanometres. However, the downscaling of transistors while keeping the power consumption low is increasingly challenging, even for the state-of-the-art fin field-effect transistors. Here we present a comprehensive assessment of the existing and future CMOS technologies, and discuss the challenges and opportunities for the design of FETs with sub-10-nanometre gate length based on a hierarchical framework established for FET scaling. We focus our evaluation on identifying the most promising sub-10-nanometre-gate-length MOSFETs based on the knowledge derived from previous scaling efforts, as well as the research efforts needed to make the transistors relevant to future logic integrated-circuit products. We also detail our vision of beyond-MOSFET future transistors and potential innovation opportunities. We anticipate that innovations in transistor technologies will continue to have a central role in driving future materials, device physics and topology, heterogeneous vertical and lateral integration, and computing technologies.

Buried graphene heterostructures for electrostatic doping of low-dimensional materials

The fabrication and characterization of steep slope transistor devices based on low-dimensional materials requires precise electrostatic doping profiles with steep spatial gradients in order to maintain maximum control over the channel. In this proof-of-concept study we present a versatile graphene heterostructure platform with three buried individually addressable gate electrodes. The platform is based on a vertical stack of embedded titanium and graphene separated by an intermediate oxide to provide an almost planar surface. We demonstrate the functionality and advantages of the platform by exploring transfer and output characteristics at different temperatures of carbon nanotube field-effect transistors with different electrostatic doping configurations. Furthermore, we back up the concept with finite element simulations to investigate the surface potential. The presented heterostructure is an ideal platform for analysis of electrostatic doping of low-dimensional materials for novel low-power transistor devices.

High-Performance Shortwave Infrared Detector Based on Multilayer Carbon Nanotube Films

Carbon nanotube (CNT) is an ideal candidate material for shortwave infrared (SWIR) detectors due to its large band gap tunability, strong infrared light absorption, and high mobility. Furthermore, the photodetectors based on CNT can be prepared on any substrate using a low-temperature process, which is conducive to three-dimensional (3D) integration. However, owing to the absorption limitation (<2%) of a single-layer network CNT film with low density, the photodetectors of CNT film show low photocurrent responsivity and detectivity. In this paper, we optimize the thickness of the high-purity semiconducting network CNT films to increase the photocurrent responsivity of the photodetectors. When the thickness of network CNT film is about 5 nm, the responsivity of the zero-bias voltage can reach 32 mA/W at 1800 nm wavelength. Then, using stacked CNT films and contact electrode design, the photodetectors exhibit a maximum responsivity of 120 mA/W at 1800 nm wavelength. The photodetectors with stacked CNT films and local n-type channel doping demonstrated a wide response spectral range of 1200-2100 nm, a peak detectivity of 3.94 × 10⁹ Jones at room temperature, and a linear dynamic range over 118 dB. Moreover, the peak detectivity is over 2.27 × 10¹¹ Jones when the temperature is 180 K. Our work demonstrates the potential of the CNT film for future SWIR imaging at a low cost.

Controlled Preparation of Single-Walled Carbon Nanotubes as Materials for Electronics

Single-walled carbon nanotubes (SWCNTs) are of particular interest as channel materials for field-effect transistors due to their unique structure and excellent properties. The controlled preparation of SWCNTs that meet the requirement of semiconducting and chiral purity, high density, and good alignment for high-performance electronics has become a key challenge in this field. In this Outlook, we outline the efforts in the preparation of SWCNTs for electronics from three main aspects, structure-controlled growth, selective sorting, and solution assembly, and discuss the remaining challenges and opportunities. We expect that this Outlook can provide some ideas for addressing the existing challenges and inspire the development of SWCNT-based high-performance electronics.

Carbon nanotube transistors: Making electronics from molecules

Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in conjunction with silicon electronics, and can potentially be used as a platform for high-performance digital electronics as well as radio-frequency and sensing applications. Recent progress in the materials, devices, and technologies related to carbon nanotube transistors is briefly reviewed. Emphasis is placed on the most broadly impactful advancements that have evolved from single-nanotube devices to implementations with aligned nanotubes and even nanotube thin films. There are obstacles that remain to be addressed, including material synthesis and processing control, device structure design and transport considerations, and further integration demonstrations with improved reproducibility and reliability; however, the integration of more than 10,000 devices in single functional chips has already been realized.

On-surface synthesis of hydroxy-functionalized graphene nanoribbons through deprotection of methylenedioxy groups

We demonstrate on-surface deprotection of methylenedioxy groups which yielded graphene nanoribbons (GNRs) with edges functionalized by hydroxy groups. While anthracene trimer precursors functionalized with hydroxy groups did not yield GNRs, it was found that hydroxy groups are first protected as methylenedioxy groups and then deprotected during the cyclo-dehydrogenation process to form GNRs with hydroxy groups. The X-ray photoemission spectroscopy and non-contact atomic force microscopy studies revealed that ∼20% of the methylenedioxy turned into hydroxy groups, while the others were hydrogen-terminated. The first-principles density functional theory (DFT) study on the cyclo-dehydrogenation process was performed to investigate the deprotection mechanism, which indicates that hydrogen atoms emerging during the cyclo-dehydrogenation process trigger the deprotection of methylenedioxy groups. The scanning tunneling spectroscopy study and DFT revealed a significant charge transfer from hydroxy to the Au substrate, causing an interface dipole and the HOMO being closer to the Fermi level when compared with hydrogen-terminated GNR/Au(111). This result demonstrates on-surface deprotection and indicates a possible new route to obtain GNRs with desired edge functionalization, which can be a critical component for high-performance devices.

Can armchair nanotubes host organic color centers?

We use time-dependent density functional theory to investigate the possibility of hosting organic color centers in (6, 6) armchair single-walled carbon nanotubes, which are known to be metallic. Our calculations show that in short segments of (6, 6) nanotubes∼5nm in length there is a dipole-allowed singlet transition related to the quantum confinement of charge carriers in the smaller segments. The introduction ofsp3defects to the surface of (6, 6) nanotubes results in new dipole-allowed excited states. Some of these states are redshifted from the native confinement state of the defect-free (6, 6) segments; this is similar behavior to what is observed withsp3defects to exciton transitions in semiconducting carbon nanotubes. This result suggests the possibility of electrically wiring organic color centers directly through armchair carbon nanotube hosts.

Hybrid Platforms of Silicon Nanowires and Carbon Nanotubes in an Ionic Liquid Bucky Gel

Silicon nanowires (NWs) are appealing building blocks for low-cost novel concept devices with improved performances. In this research paper, we realized a hybrid platform combining an array of vertically oriented Si NWs with different types of bucky gels, obtained from carbon nanotubes (CNT) dispersed into an ionic liquid (IL) matrix. Three types of CNT bucky gels were obtained from imidazolium-based ionic liquids (BMIM-I, BIMI-BF₄, and BMIM-Tf₂N) and semiconductive CNTs, whose structural and optical responses to the hybrid platforms were analyzed and compared. We investigated the electrical response of the IL-CNT/NW hybrid junctions in dark and under illumination for each platform and its correlation to the ionic liquid characteristics and charge mobility. The reported results confirm the attractiveness of such IL-CNT/NW hybrid platforms as novel light-responsive materials for photovoltaic applications. In particular, our best performing cell reported a short-circuit current density of 5.6 mA/cm² and an open-circuit voltage of 0.53 V.

Recent progress of fiber-based transistors: materials, structures and applications

Wearable electronics on fibers or fabrics assembled with electronic functions provide a platform for sensors, displays, circuitry, and computation. These new conceptual devices are human-friendly and programmable, which makes them indispensable for modern electronics. Their unique properties such as being adaptable in daily life, as well as being lightweight and flexible, have enabled many promising applications in robotics, healthcare, and the Internet of Things (IoT). Transistors, one of the fundamental blocks in electronic systems, allow for signal processing and computing. Therefore, study leading to integration of transistors with fabrics has become intensive. Here, several aspects of fiber-based transistors are addressed, including materials, system structures, and their functional devices such as sensory, logical circuitry, memory devices as well as neuromorphic computation. Recently reported advances in development and challenges to realizing fully integrated electronic textile (e-textile) systems are also discussed.

Use of Ambipolar Dual-Gate Carbon Nanotube Field-Effect Transistor to Configure Exclusive-OR Gate

As the physical scaling limit of silicon-based integrated circuits is approached, new materials and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate performed as a building block for digital adder and encrypted circuits. Here, we suggest that using the ambipolar property of carbon nanotubes and the threshold modulation ability of dual-gate field-effect transistors, an XOR gate can be constructed in only one transistor. For a traditional XOR gate, 4 to 6 transistors are needed, and this low-footprint topology could be employed in the future for hyperscaling and three-dimensional logic and memory transistor integration.

Vertical MoS2 transistors with sub-1-nm gate lengths

Ultra-scaled transistors are of interest in the development of next-generation electronic devices^1-3. Although atomically thin molybdenum disulfide (MoS₂) transistors have been reported⁴, the fabrication of devices with gate lengths below 1 nm has been challenging⁵. Here we demonstrate side-wall MoS₂ transistors with an atomically thin channel and a physical gate length of sub-1 nm using the edge of a graphene layer as the gate electrode. The approach uses large-area graphene and MoS₂ films grown by chemical vapour deposition for the fabrication of side-wall transistors on a 2-inch wafer. These devices have On/Off ratios up to 1.02 × 10⁵ and subthreshold swing values down to 117 mV dec^-1. Simulation results indicate that the MoS₂ side-wall effective channel length approaches 0.34 nm in the On state and 4.54 nm in the Off state. This work can promote Moore's law of the scaling down of transistors for next-generation electronics.

Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts

The assembly of single-walled carbon nanotubes (CNTs) into high-density horizontal arrays is strongly desired for practical applications, but challenges remain despite myriads of research efforts. Herein, we developed a non-destructive soft-lock drawing method to achieve ultraclean single-walled CNT arrays with a very high degree of alignment (angle standard deviation of ~0.03°). These arrays contained a large portion of nanometre-sized CNT bundles, yielding a high packing density (~400 µm^-1) and high current carrying capacity (∼1.8 × 10⁸ A cm^-2). This alignment strategy can be generally extended to diverse substrates or sources of raw single-walled CNTs. Significantly, the assembled CNT bundles were used as nanometre electrical contacts of high-density monolayer molybdenum disulfide (MoS₂) transistors, exhibiting high current density (~38 µA µm^-1), low contact resistance (~1.6 kΩ µm), excellent device-to-device uniformity and highly reduced device areas (0.06 µm² per device), demonstrating their potential for future electronic devices and advanced integration technologies.

Gel Chromatography for Separation of Single-Walled Carbon Nanotubes

Carbon nanotubes (CNTs), having either metallic or semiconducting properties depending on their chirality, are advanced materials that can be used for different devices and materials (e.g., fuel cells, transistors, solar cells, reinforced materials, and medical materials) due to their excellent electrical conductivity, mechanical strength, and thermal conductivity. Single-walled CNTs (SWNTs) have received special attention due to their outstanding electrical and optical properties; however, the inability to selectively synthesize specific types of CNTs has been a major obstacle for their commercialization. Therefore, researchers have studied different methods for the separation of SWNTs based on their electrical and optical properties. Gel chromatography methods enable the large-scale separation of metallic/semiconducting (m/s) SWNTs and single-chirality SWNTs with specific bandgaps. The core principle of gel chromatography-based SWNT separation is the interaction between the SWNTs and gels, which depends on the unique electrical properties of the former. Controlled pore glass, silica gel, agarose-based gel, and allyl dextran-based gel have been exploited as mediums for gel chromatography. In this paper, the interaction between SWNTs and gels and the different gel chromatography-based SWNT separation technologies are introduced. This paper can serve as a reference for researchers who plan to separate SWNTs with gel chromatography.

Selective separation of single-walled carbon nanotubes in aqueous solution by assembling redox nanoclusters

The selective separation of soluble and individual single-walled carbon nanotubes (SWCNTs) in aqueous solution is a key step for harnessing the extraordinary properties of these materials. Manipulating the strong van der Waals intertube interactions between the SWCNT bundles is very important in selective separation, which is a long-standing challenge. Here we reported the ability of redox polyoxometalate clusters to modulate the intertube π-π stacking interaction through electron transfer and achieved the diameter-selective separation of SWCNTs in a surfactant aqueous solution. The large-diameter SWCNTs concentrated at ∼1.3-1.4 nm were selectively separated when ∼1 nm clusters encapsulated within the tube cavity, and the dispersion of subnanometer ∼0.7-0.9 nm SWCNTs was boosted when clusters were adsorbed on the outer surface of small-diameter nanotubes. The mechanism of diameter-selective separation of SWCNTs associated with the size-dependent interaction between cluster-tubes and the steric hindrance effect of clusters was revealed by optical absorption and Raman spectroscopy. This simple method thus enables the selective separation of individual high-quality SWCNTs in aqueous solutions without harsh sonication with the potential for other separation applications.

The Realization of ZnO Nanowires Interconnection through Femtosecond Laser Irradiation of Ag Nanoparticles Solder

Nanowire interconnection is the basis for the construction and integration of micro-nano functional devices. But so far, it is still difficult to achieve a reliable interconnection of metal oxide nanowires. This letter proposes an approach for soldering ZnO nanowires through femtosecond laser irradiation of Ag nanoparticles solder. In this paper, the effect of femtosecond laser fluence and irradiation time on the morphology of Ag solders and the interconnection state of ZnO nanowires are studied, respectively. The I-V electrical characterization of nanowire interconnection before and after soldering is completed. The results demonstrate that ZnO nanowires achieve better interconnection. The UV light response of the ZnO-Ag-ZnO interconnection structure after soldering is investigated. The approach confirms the effectiveness of a femtosecond irradiated metal nanoparticles solder to achieve metal oxide interconnection, offering the prospect of more metal oxide nanowires interconnection and device development.

Dip-Coating Self-Assembly Fabrication and Polarization Sensitive Photoresponse of Aligned Single-Walled Carbon Nanotube Film

It is challenging to obtain wafer-scaled aligned films for completely exploiting the promising properties of semiconducting single-walled carbon nanotubes (s-SWCNTs). Aligned s-SWCNTs with a large area can be obtained by combining water evaporation and slow withdrawal-induced self-assembly in a dip-coating process. Moreover, the tunability of deposition morphology parameters such as stripe width and spacing is examined. The polarized Raman results show that s-SWCNTs can be aligned in ±8.6°. The derived two terminal photodetector shows both a high negative responsivity of 41 A/W at 520 nm and high polarization sensitivity. Our results indicate that aligned films with a large area may be useful to electronics- and optoelectronics-related applications.

Semiconductor nanochannels in metallic carbon nanotubes by thermomechanical chirality alteration

[Figure: see text].

Advances and Frontiers in Single-Walled Carbon Nanotube Electronics

Single-walled carbon nanotubes (SWCNTs) have been considered as one of the most promising electronic materials for the next-generation electronics in the more Moore era. Sub-10 nm SWCNT-field effect transistors (FETs) have been realized with several performances exceeding those of Si-based FETs at the same feature size. Several industrial initiatives have attempted to implement SWCNT electronics in integrated circuit (IC) chips. Here, the recent advances in SWCNT electronics are reviewed from in-depth understanding of the fundamental electronic structures, the carrier transport mechanisms, and the metal/SWCNT contact properties. In particular, the subthreshold switching properties are highlighted for low-power, energy-efficient device operations. State-of-the-art low-power SWCNT-based electronics and the key strategies to realize low-voltage and low-power operations are outlined. Finally, the essential challenges and prospects from the material preparation, device fabrication, and large-scale ICs integration for future SWCNT-based electronics are foregrounded.

Carbon Nanotube (CNT)-Based Biosensors

This review focuses on recent advances in the application of carbon nanotubes (CNTs) for the development of sensors and biosensors. The paper discusses various configurations of these devices, including their integration in analytical devices. Carbon nanotube-based sensors have been developed for a broad range of applications including electrochemical sensors for food safety, optical sensors for heavy metal detection, and field-effect devices for virus detection. However, as yet there are only a few examples of carbon nanotube-based sensors that have reached the marketplace. Challenges still hamper the real-world application of carbon nanotube-based sensors, primarily, the integration of carbon nanotube sensing elements into analytical devices and fabrication on an industrial scale.

Building a Bridge for Carbon Nanotubes from Nanoscale Structure to Macroscopic Application

Through 30 years of research, researchers have gained a deep understanding of the synthesis, characteristics, and applications of carbon nanotubes (CNTs). However, up to now, there are still few industries using CNT as the leading material. The difficulty of CNTs to be applied in industry is the gap between the properties of CNT-based aggregates and those of a single carbon nanotube. Therefore, how to maintain the intrinsic properties of CNTs when they are assembled into aggregates is of great significance. Herein, we summarize and analyze the research status of CNT materials applied in different fields from proven techniques to potential industries, including energy storage, electronics, mechanical and other applications. For each application, the intrinsic properties of CNTs and the real performances of their aggregates are compared to figure out the key problems in CNT synthesis. Finally, we give an outlook for building a bridge for CNTs from nanoscale structure to macroscopic application, giving inspiration to researchers making efforts toward the real application of carbon nanotubes.

Integrated Iontronic Circuits Based on Single Nanochannels

This article presents an invention of iontronic circuits to achieve effective electronic signal manipulation base on paralleled single polydimethylsiloxane (PDMS) nanochannels. The regulation of ion transport through the designed device is achieved by the asymmetrical decoration of charged polyelectrolytes on nanochannels. This circuit can serve as either a bipolar junction transistor or an ionic rectifier. The functionalities of the circuit are demonstrated and confirmed in different operation modes. The fabrication of this device is relatively simple. High accuracy in signal rectification can be obtained through the circuit because of the significant consistency of integrated ionic diodes. The iontronic integrated circuits presented in this paper provide new possibilities in the fabrication of iontronic devices with various functionalities on PDMS chips, toward improved biological computing and sensing.

A surface charge governed nanofluidic diode based on a single polydimethylsiloxane (PDMS) nanochannel

HYPOTHESIS

Nanofluidic diodes have attracted intense attention recently. Commonly used materials to design these devices are membrane-based short nanopores and aligned Carbon nanotube bundles. It is highly desirable and very challenging to develop a nanofluidic diode based on a single PDMS nanochannel which is easier to be introduced into an integrated electronic system on a chip. Layer-by-layer (LBL) deposition of charged polyelectrolytes can change the size and surface properties of PDMS nanochannels that provides new possibilities to develop high-performance nanofluidic based on PDMS nanochannels.

EXPERIMENTS

A novel design of nanofluidic diode is presented by controlling the surface charges and sizes of single PDMS nanochannels by surface modification using polyelectrolytes. Polybrene (PB) and Dextran sulfate (DS) are used to reduce the PDMS nanochannel size to meet the requirement of ion gating by LBL method and generate opposite surface charges at the ends of nanochannels. The parameters of such a nanofluidic diode are investigated systematically.

FINDINGS

This nanofluidic diode developed in this work has high effective current rectification performance. The rectification ratio can be as high as 218 which is the best ever reported in PB/DS modified nanochannels. This rectification ratio reduces with high voltage frequency and ionic concentration whereas increases in shorter nanochannels.

Host-Guest Molecular Interaction Enabled Separation of Large-Diameter Semiconducting Single-Walled Carbon Nanotubes

Semiconducting single-walled carbon nanotubes (s-SWCNTs) with a diameter of around 1.0-1.5 nm, which present bandgaps comparable to silicon, are highly desired for electronic applications. Therefore, the preparation of s-SWCNTs of such diameters has been attracting great attention. The inner surface of SWCNTs has a suitable curvature and large contacting area, which is attractive in host-guest chemistry triggered by electron transfer. Here we reported a strategy of host-guest molecular interaction between SWCNTs and inner clusters with designed size, thus selectively separating s-SWCNTs of expected diameters. When polyoxometalate clusters of ∼1 nm in size were filled in the inner cavities of SWCNTs, s-SWCNTs with diameters concentrated at ∼1.3-1.4 nm were selectively extracted with the purity of ∼98% by a commercially available polyfluorene derivative. The field-effect transistors built from the sorted s-SWCNTs showed a typical behavior of semiconductors. The sorting mechanisms associated with size-dependent electron transfer from nanotubes to inner polyoxometalate were revealed by the spectroscopic and in situ electron microscopic evidence as well as the theoretical calculation. The polyoxometalates with designable size and redox property enable the flexible regulation of interaction between the nanotubes and the clusters, thus tuning the diameter of sorted s-SWCNTs. The present sorting strategy is simple and should be generally feasible in other SWCNT sorting techniques, bringing both great easiness in dispersant design and improved selectivity.

Integration of Gold Nanoparticle-Carbon Nanotube Composite for Enhanced Contact Lifetime of Microelectromechanical Switches with Very Low Contact Resistance

Electrical circuits require ideal switches with low power consumption for future electronic applications. However, transistors, the most developed electrical switches available currently, have certain fundamental limitations such as increased leakage current and limited subthreshold swing. To overcome these limitations, micromechanical switches have been extensively studied; however, it is challenging to develop micromechanical switches with high endurance and low contact resistance. This study demonstrates highly reliable microelectromechanical switches using nanocomposites. Nanocomposites consisting of gold nanoparticles (Au NPs) and carbon nanotubes (CNTs) are coated on contact electrodes as contact surfaces through a scalable and solution-based fabrication process. While deformable CNTs in the nanocomposite increase the effective contact area under mechanical loads, highly conductive Au NPs provide current paths with low contact resistance between CNTs. Given these advantages, the switches exhibit robust switching operations over 5 × 10⁶ cycles under hot-switching conditions in air. The switches also show low contact resistance without subthreshold region, an extremely small leakage current, and a high on/off ratio.

Materials Science Challenges to Graphene Nanoribbon Electronics

Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness. However, the adoption of GNRs in commercial technologies is currently hampered by materials science and integration challenges pertaining to synthesis and devices. In this Review, we present an overview of the current status of challenges, recent breakthroughs toward overcoming these challenges, and possible future directions for the field of GNR electronics. We motivate the need for exploration of scalable synthetic techniques that yield atomically precise, placed, registered, and oriented GNRs on CMOS-compatible substrates and stimulate ideas for contact and dielectric engineering to realize experimental performance close to theoretically predicted metrics. We also briefly discuss unconventional device architectures that could be experimentally investigated to harness the maximum potential of GNRs in future spintronic and quantum information technologies.

Critical challenges and advances in the carbon nanotube-metal interface for next-generation electronics

Next-generation electronics can no longer solely rely on conventional materials; miniaturization of portable electronics is pushing Si-based semiconductors and metallic conductors to their operational limits, flexible displays will make common conductive metal oxide materials obsolete, and weight reduction requirement in the aerospace industry demands scientists to seek reliable low-density conductors. Excellent electrical and mechanical properties, coupled with low density, make carbon nanotubes (CNTs) attractive candidates for future electronics. However, translating these remarkable properties into commercial macroscale applications has been disappointing. To fully realize their great potential, CNTs need to be seamlessly incorporated into metallic structures or have to synergistically work alongside them which is still challenging. Here, we review the major challenges in CNT-metal systems that impede their application in electronic devices and highlight significant breakthroughs. A few key applications that can capitalize on CNT-metal structures are also discussed. We specifically focus on the interfacial interaction and materials science aspects of CNT-metal structures.

Toward nanobioelectronic medicine: Unlocking new applications using nanotechnology

Bioelectronic medicine aims to interface electronic technology with biological components and design more effective therapeutic and diagnostic tools. Advances in nanotechnology have moved the field forward improving the seamless interaction between biological and electronic components. In the lab many of these nanobioelectronic devices have the potential to improve current treatment approaches, including those for cancer, cardiovascular disorders, and disease underpinned by malfunctions in neuronal electrical communication. While promising, many of these devices and technologies require further development before they can be successfully applied in a clinical setting. Here, we highlight recent work which is close to achieving this goal, including discussion of nanoparticles, carbon nanotubes, and nanowires for medical applications. We also look forward toward the next decade to determine how current developments in nanotechnology could shape the growing field of bioelectronic medicine. This article is categorized under: Therapeutic Approaches and Drug Discovery > Emerging Technologies Nanotechnology Approaches to Biology > Nanoscale Systems in Biology Diagnostic Tools > Biosensing.

Carboxylic acids as anchoring components on aluminum oxide for the alignment relay technique of single-walled carbon nanotubes

We illustrate using a carboxylic acid anchoring component in the Alignment Relay Technique on silica and alumina surfaces. We present theoretical calculations on the interactions between the iptycenes' various pockets and the carbon nanotubes.

Synthesis of a Sidewall Fragment of a (12,0) Carbon Nanotube

Synthesis of a carbon nanobelt (CNB) is a very challenging task in organic chemistry. Herein, we report the successful synthesis of an octabenzo[12]cyclacene based CNB (6), which can be regarded as a sidewall fragment of a (12,0) carbon nanotube. The key intermediate compound, a tetraepoxy nanobelt (5), was first synthesized by Diels-Alder reaction, and subsequent reductive aromatization gave the fully conjugated CNB 6. X-ray crystallographic analysis unambiguously confirmed the belt-shaped structure of 6. ¹ H NMR spectrum and theoretical calculations (ACID, NICS, and 2D/3D ICSS) revealed localized aromaticity and stronger shielding chemical environment in the inner region of the belt. The optical properties (absorption and emission) of 6 were studied and correlated to its electronic structure. Strain analysis indicates that the phenyl substituents at the zigzag edges are crucial to the successful synthesis of 6. This report presents a new strategy towards highly strained CNBs.

Surface passivation dictated site-selective growth of aligned carbon nanotubes

Surface defects play a significant role in the nucleation and growth of metal particles. Site-selective nucleation of metal catalyst particles, and the subsequent growth of nanostructures, could thus be accomplished by defect engineering. This paper demonstrates the switching of growth sites of vertically aligned multiwall carbon nanotubes (MW-CNTs) by manipulation of surface passivation of the substrate and discusses the possible mechanism behind this selectivity. A complementary growth pattern of CNTs is observed for pre-treatment of identically patterned SiO2/Si substrates under a reducing and non-reducing atmosphere. Variation in the number density of oxygen vacancies on the silicon dioxide surface and the presence of native oxide on the silicon face are believed to dictate the observed selectivity. The CNT architectures mimic the substrate pattern meticulously, exhibiting sharp edges, illustrating a high degree of site selectivity. The chemical state of the substrate surface and catalyst particles has been studied using Auger electron spectroscopy. Electron microscopy and Raman spectroscopy were employed to characterize the synthesized CNTs. The Hermans orientation factor was calculated to quantify the degree of alignment of the MWCNTs. Such facile control over the growth site of aligned carbon nanotubes on a substrate is a desirable aspect of synthesis for easy integration with existing silicon fabrication technology.

Horizontal Single-Walled Carbon Nanotube Arrays: Controlled Synthesis, Characterizations, and Applications

Single-walled carbon nanotubes (SWNTs) emerge as a promising material to advance carbon nanoelectronics. However, synthesizing or assembling pure metallic/semiconducting SWNTs required for interconnects/integrated circuits, respectively, by a conventional chemical vapor deposition method or by an assembly technique remains challenging. Recent studies have shown significant scientific breakthroughs in controlled SWNT synthesis/assembly and applications in scaled field effect transistors, which are a critical component in functional nanodevices, thereby rendering the horizontal SWNT array an important candidate for innovating nanotechnology. This review provides a comprehensive analysis of the controlled synthesis, surface assembly, characterization techniques, and potential applications of horizontally aligned SWNT arrays. This review begins with the discussion of synthesis of horizontally aligned SWNTs with regulated direction, density, structure, and theoretical models applied to understand the growth results. Several traditional procedures applied for assembling SWNTs on target surface are also briefly discussed. It then discusses the techniques adopted to characterize SWNTs, ranging from electron/probe microscopy to various optical spectroscopy methods. Prototype applications based on the horizontally aligned SWNTs, such as interconnects, field effect transistors, integrated circuits, and even computers, are subsequently described. Finally, this review concludes with challenges and a brief outlook of the future development in this research field.

Dynamic Covalent Formation of Concave Disulfide Macrocycles Mechanically Interlocked with Single-Walled Carbon Nanotubes

The formation of discrete macrocycles wrapped around single-walled carbon nanotubes (SWCNTs) has recently emerged as an appealing strategy to functionalize these carbon nanomaterials and modify their properties. Here, we demonstrate that the reversible disulfide exchange reaction, which proceeds under mild conditions, can install relatively large amounts of mechanically interlocked disulfide macrocycles on the one-dimensional nanotubes. Size-selective functionalization of a mixture of SWCNTs of different diameters were observed, presumably arising from error correction and the presence of relatively rigid, curved π-systems in the key building blocks. A combination of UV/Vis/NIR, Raman, photoluminescence excitation, and transient absorption spectroscopy indicated that the small (6,4)-SWCNTs were predominantly functionalized by the small macrocycles 1₂ , whereas the larger (6,5)-SWCNTs were an ideal match for the larger macrocycles 2₂ . This size selectivity, which was rationalized computationally, could prove useful for the purification of nanotube mixtures, since the disulfide macrocycles can be removed quantitatively under mild reductive conditions.

Chirality-Enriched Carbon Nanotubes for Next-Generation Computing

For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and low-power portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary field-effect transistors, optoelectronic integrated circuits, and enantiomer-recognition sensors. Here, recent progress in SWCNT-based computing devices is reviewed, with an emphasis on the relationship between chirality enrichment and electronic functionality. In particular, after highlighting chirality-dependent SWCNT properties and chirality enrichment methods, the range of computing applications that have been demonstrated using chirality-enriched SWCNTs are summarized. By identifying remaining challenges and opportunities, this work provides a roadmap for next-generation SWCNT-based computing.

Study of Dispersions of Carbon Nanotubes Modified by the Method of Rapid Expansion of Supercritical Suspensions

The effectiveness of carbon nanotubes (CNT) deagglomeration by rapid expansion of supercritical suspensions (RESS) in nitrogen and carbon dioxide fluids was studied in this work. Two different mechanisms of deagglomeration were proposed for these two fluids at various temperature and pressure conditions. Ultrasound attenuation spectroscopy was applied as an express method of determining median diameter and aspect ratio of CNTs. At least twofold reduction of the diameter was shown for CNT bundles processed by RESS technique. Aspect ratio of processed CNTs, calculated from acoustic attenuation spectra, increased to 340. These results were in a good agreement with atomic force microscopy data.

Effects of Water and Different Solutes on Carbon-Nanotube Low-Voltage Field-Effect Transistors

Semiconducting single-walled carbon nanotubes (swCNTs) are a promising class of materials for emerging applications. In particular, they are demonstrated to possess excellent biosensing capabilities, and are poised to address existing challenges in sensor reliability, sensitivity, and selectivity. This work focuses on swCNT field-effect transistors (FETs) employing rubbery double-layer capacitive dielectric poly(vinylidene fluoride-co-hexafluoropropylene). These devices exhibit small device-to-device variation as well as high current output at low voltages (<0.5 V), making them compatible with most physiological liquids. Using this platform, the swCNT devices are directly exposed to aqueous solutions containing different solutes to characterize their effects on FET current-voltage (FET I-V) characteristics. Clear deviation from ideal characteristics is observed when swCNTs are directly contacted by water. Such changes are attributed to strong interactions between water molecules and sp² -hybridized carbon structures. Selective response to Hg²⁺ is discussed along with reversible pH effect using two distinct device geometries. Additionally, the influence of aqueous ammonium/ammonia in direct contact with the swCNTs is investigated. Understanding the FET I-V characteristics of low-voltage swCNT FETs may provide insights for future development of stable, reliable, and selective biosensor systems.

Separation of Semiconducting Carbon Nanotubes Using Conjugated Polymer Wrapping

In the past two decades, single-walled carbon nanotubes (SWNTs) have been explored for electronic applications because of their high charge carrier mobility, low-temperature solution processability and mechanical flexibility. Semiconducting SWNTs (s-SWNTs) are also considered an alternative to traditional silicon-based semiconductors. However, large-scale, as-produced SWNTs have poor solubility, and they are mixtures of metallic SWNTs (m-SWNTs) and s-SWNTs, which limits their practical applications. Conjugated polymer wrapping is a promising method to disperse and separate s-SWNTs, due to its high selectivity, high separation yield and simplicity of operation. In this review, we summarize the recent progress of the conjugated polymer wrapping method, and discuss possible separation mechanisms for s-SWNTs. We also discuss various parameters that may affect the selectivity and sorting yield. Finally, some electronic applications of polymer-sorted s-SWNTs are introduced. The aim of this review is to provide polymer chemist a basic concept of polymer based SWNT separation, as well as some polymer design strategies, influential factors and potential applications.

Neuromorphic nanoelectronic materials

Memristive and nanoionic devices have recently emerged as leading candidates for neuromorphic computing architectures. While top-down fabrication based on conventional bulk materials has enabled many early neuromorphic devices and circuits, bottom-up approaches based on low-dimensional nanomaterials have shown novel device functionality that often better mimics a biological neuron. In addition, the chemical, structural and compositional tunability of low-dimensional nanomaterials coupled with the permutational flexibility enabled by van der Waals heterostructures offers significant opportunities for artificial neural networks. In this Review, we present a critical survey of emerging neuromorphic devices and architectures enabled by quantum dots, metal nanoparticles, polymers, nanotubes, nanowires, two-dimensional layered materials and van der Waals heterojunctions with a particular emphasis on bio-inspired device responses that are uniquely enabled by low-dimensional topology, quantum confinement and interfaces. We also provide a forward-looking perspective on the opportunities and challenges of neuromorphic nanoelectronic materials in comparison with more mature technologies based on traditional bulk electronic materials.