Advancing high thermal conductivity: novel theories, innovative materials, and applications in thermal management technologies

Effective thermal management is crucial for the performance and stability of modern electronics, emphasizing the demand for high thermal conductivity (κ). This review summarizes the latest development in highκ, discussing the emerging theories, innovative materials and practical applications for interfacial heat dissipation. Unique phononic thermal transport behaviors are discussed, including four phonon-phonon scattering, hydrodynamic phonons, surface phonon-polaritons, and more. The review also highlights innovative materials with highκ, such as two-dimensional pentagonal structures, boron carbon nitrogen structures, hexagonal boron arsenide andθ-phase tantalum nitride. In addition, the potential of polymer composites reinforced with highκfillers and surface engineering for advanced electronic applications are also discussed. By integrating these theoretical approaches and material innovations, this review offers comprehensive strategies for enhancing thermal management in modern electronic devices.

The effect of optical-acoustic phonon coupling on the thermal conductivity of 2D MgI2

2D MgI2 has a large phonon band gap and strong coupling of optical and acoustic phonons, and it is difficult to accurately predict thermal conductivity by considering only three-phonon scattering. Thus, in this study, the effect of four-phonon scattering on the thermal conductivity of a 2D MgI2 lattice was investigated using first-principles calculations combined with Boltzmann transport theory. The results show that with increasing temperature, four-phonon scattering induces an increase in the scattering of phonons at the optical and acoustic phonon coupling (2 THz), as well as in the vicinity of the optical phonon branch (4.5 THz), which leads to the enhancement of the anharmonicity of phonon transport and results in a decrease in the thermal conductivity of the 2D material. At 700 K, the thermal conductivity of MgI2 decreases by over half, from 0.47 W m-1 K-1 to 0.23 W m-1 K-1, when considering both three- and four-phonon scattering, compared to considering only three-phonon scattering. This study confirms the need to consider the role of four-phonon scattering to enhance optical and acoustic phonon coupling to accurately predict the thermal conductivity of 2D materials with larger phonon band gaps.

Machine-Learning-Based Interatomic Potentials for Group IIB to VIA Semiconductors: Toward a Universal Model

Rapid advancements in machine-learning methods have led to the emergence of machine-learning-based interatomic potentials as a new cutting-edge tool for simulating large systems with ab initio accuracy. Still, the community awaits universal interatomic models that can be applied to a wide range of materials without tuning neural network parameters. We develop a unified deep-learning interatomic potential (the DPA-Semi model) for 19 semiconductors ranging from group IIB to VIA, including Si, Ge, SiC, BAs, BN, AlN, AlP, AlAs, InP, InAs, InSb, GaN, GaP, GaAs, CdTe, InTe, CdSe, ZnS, and CdS. In addition, independent deep potential models for each semiconductor are prepared for detailed comparison. The training data are obtained by performing density functional theory calculations with numerical atomic orbitals basis sets to reduce the computational costs. We systematically compare various properties of the solid and liquid phases of semiconductors between different machine-learning models. We conclude that the DPA-Semi model achieves GGA exchange-correlation functional quality accuracy and can be regarded as a pretrained model toward a universal model to study group IIB to VIA semiconductors.

Comparison of lattice thermal conductivity usingab-initioDFT, machine learning interatomic potentials, and temperature dependent effective potential: a case study of hexagonal BN and BP bilayer

Discovering high thermal conductivity materials is essential for various practical applications, particularly in electronic cooling. The significance of two-dimensional (2D) materials lies in their unique properties that emerge due to their reduced dimensionality, making them highly promising for a wide range of applications. Hexagonal boron nitride (BN), both monolayer and bilayer forms, has garnered attention for its fascinating properties. In this work, we focus on bilayer boron phosphide (BP), which is isostructural to its BN analogue. The lattice thermal conductivity of both bilayer BN and BP have been calculated usingab-initiodensity functional theory, machine learning with the moment tensor potential method, and the temperature-dependent effective-potential method (TDEP). The TDEP approach gives more accurate results for both BN and BP materials. The lattice thermal conductivity of bilayer BP is lower than that of bilayer BN at room temperature, attributed to increased phonon anharmonicity. This study highlights the importance of understanding phonon scattering mechanisms in determining the thermal conductivity of 2D materials, contributing to the broader understanding and potential applications of these materials in future technologies.

Evidence of Higher Order Phonon Anharmonicity in Gray Arsenic Crystal

Phonons play a key role in the heat transport process of quantum materials. The understanding of thermal behaviors of phonons will be beneficial for designing modern electronic devices. In this study, we utilize specific heat, Raman spectroscopy, and first-principles calculations combined with the phonon Boltzmann transport equation to explore the thermal transport of gray arsenic. Our specific heat data indicate the presence of the phonon anharmonicity at high temperature. This is further supported by temperature-dependent Raman data showing evident phonon softening and line width broadening. More interestingly, from the analysis of temperature-dependent Raman modes, we found that the four-phonon scattering process is indispensable for interpreting the line width broadening at high temperatures. Moreover, we evaluate the importance of the four-phonon scattering process in the heat transport of gray arsenic using the moment tensor potential method. Our work sheds light on the importance of a higher order phonon scattering process in heat transport of the materials with moderate thermal conductivity.

Insight into Interfacial Heat Transfer of β-Ga2O3/Diamond Heterostructures via the Machine Learning Potential

β-Ga2O3 is an ultrawide-band gap semiconductor with excellent potential for high-power and ultraviolet optoelectronic device applications. Low thermal conductivity is one of the major obstacles to enable the full performance of β-Ga2O3-based devices. A promising solution for this problem is to integrate β-Ga2O3 with a diamond heat sink. However, the thermal properties of the β-Ga2O3/diamond heterostructures after the interfacial bonding have not been studied extensively, which are influenced by the crystal orientations and interfacial atoms for the β-Ga2O3 and diamond interfaces. In this work, molecular dynamics simulations based on machine learning potential have been adopted to investigate the crystal-orientation-dependent and interfacial-atom-dependent thermal boundary resistance (TBR) of the β-Ga2O3/diamond heterostructure after interfacial bonding. The differences in TBR at different interfaces are explained in detail through the explorations of thermal conductivity value, thermal conductivity spectra, vibration density of states, and interfacial structures. Based on the above explorations, a further understanding of the influence of different crystal orientations and interfacial atoms on the β-Ga2O3/diamond heterostructure was achieved. Finally, insightful optimization strategies have been proposed in the study, which could pave the way for better thermal design and management of β-Ga2O3/diamond heterostructures according to guidance in the selection of the crystal orientations and interfacial atoms of the β-Ga2O3 and diamond interfaces.

Modulating Thermal Conductivity via Targeted Phonon Excitation

Thermal conductivity is a critical material property in numerous applications, such as those related to thermoelectric devices and heat dissipation. Effectively modulating thermal conductivity has become a great concern in the field of heat conduction. Here, a quantum modulation strategy is proposed to modulate the thermal conductivity/heat flux by exciting targeted phonons. It shows that the thermal conductivity of graphene can be tailored in the range of 1559 W m-1 K-1 (decreased to 49%) to 4093 W m-1 K-1 (increased to 128%), compared with the intrinsic value of 3189 W m-1 K-1. The effects are also observed for graphene nanoribbons and bulk silicon. The results are obtained through both density functional theory calculations and molecular dynamics simulations. This novel modulation strategy may pave the way for quantum heat conduction.

Unusually high thermal conductivity in suspended monolayer MoSi2N4

Two-dimensional semiconductors with high thermal conductivity and charge carrier mobility are of great importance for next-generation electronic and optoelectronic devices. However, constrained by the long-held Slack's criteria, the reported two-dimensional semiconductors such as monolayers of MoS2, WS2, MoSe2, WSe2 and black phosphorus suffer from much lower thermal conductivity than silicon (~142 W·m-1·K-1) because of the complex crystal structure, large average atomic mass and relatively weak chemical bonds. Despite the more complex crystal structure, the recently emerging monolayer MoSi2N4 semiconductor has been predicted to have high thermal conductivity and charge carrier mobility simultaneously. In this work, using a noncontact optothermal Raman technique, we experimentally measure a high thermal conductivity of ~173 W·m-1·K-1 at room temperature for suspended monolayer MoSi2N4 grown by chemical vapor deposition. First-principles calculations reveal that such unusually high thermal conductivity benefits from the high Debye temperature and small Grüneisen parameter of MoSi2N4, both of which are strongly dependent on the high Young's modulus induced by the outmost Si-N bilayers. Our study not only establishes monolayer MoSi2N4 as a benchmark 2D semiconductor for next-generation electronic and optoelectronic devices, but also provides an insight into the design of 2D materials for efficient heat conduction.

3D-Networks Based Polymer Composites for Multifunctional Thermal Management and Electromagnetic Protection: A Mini Review

The rapid development of miniaturized, high-frequency, and highly integrated microelectronic devices has brought about critical issues in electromagnetic compatibility and thermal management. In recent years, there has been significant interest in lightweight polymer-based composites that offer both electromagnetic interference (EMI) shielding and thermal conductivity. One promising approach involves constructing three-dimensional (3D) interconnection networks using functional fillers in the polymer matrix. These networks have been proven effective in enhancing the thermal and electrical conductivity of the composites. This mini-review focuses on the preparation and properties of 3D network-reinforced polymer composites, specifically those incorporating metal, carbon, ceramic, and hybrid networks. By comparing the effects of different filler types and distribution on the composite materials, the advantages of 3D interconnected conductive networks in polymer composites are highlighted. Additionally, this review addresses the challenges faced in the field of multifunctional thermal management and electromagnetic protection materials and provides insights into future development trends and application prospects of 3D structured composites.

Thermally Conductive Elastomer Composites with High Toughness, Softness, and Resilience Enabled by Regulating Interfacial Structure and Dynamics

The emerging applications of thermally conductive elastomer composites in modern electronic devices for heat dissipation require them to maintain both high toughness and resilience under thermomechanical stresses. However, such a combination of thermal conductivity and desired mechanical characteristics is extremely challenging to achieve in elastomer composites. Here this long-standing mismatch is resolved via regulating interfacial structure and dynamics response. This regulation is realized both by tuning the molecular weight of the dangling chains in the polymer networks and by silane grafting of the fillers, thereby creating a broad dynamic-gradient interfacial region comprising of entanglements. These entanglements can provide the slipping topological constraint that allows for tension equalization between and along the chains, while also tightening into rigid knots to prevent chain disentanglement upon stretching. Combined with ultrahigh loading of aluminum-fillers (90 wt%), this design provides a low Young's modulus (350.0 kPa), high fracture toughness (831.5 J m-2), excellent resilience (79%) and enhanced thermal conductivity (3.20 W m-1 k-1). This work presents a generalizable preparation strategy toward engineering soft, tough, and resilient high-filled elastomer composites, suitable for complex environments, such as automotive electronics, and wearable devices.

Four-Phonon Enhanced the Thermoelectric Properties of ScSX (X = Cl, Br, and I) Monolayers

Recently, the FeOCl-type two-dimensional materials have attracted significant attention owing to their versatile applications in fields such as thermoelectricity and photocatalysis. This study aims to systematically investigate the thermoelectric properties of ScSX (X = Cl, Br, and I) monolayers by a combination of the first-principles calculations and the machine-learning interatomic potential approach. These monolayers are indirect semiconductors with band gaps of 3.22 (ScSCl), 3.27 (ScSBr), and 2.87 eV (ScSI), respectively. The lattice thermal conductivity is decreased by 25.72% (20.90%), 44.05% (40.00%), and 30.96% (34.76%) for ScSCl, ScSBr, and ScSI along the x-axis (y-axis) when the four-phonon scattering is introduced, indicating its important role in phonon transport. Anharmonic phonon scattering yields high Grüneisen parameter and scattering rate values, hence causing these low lattice thermal conductivities. Additionally, the large Seebeck coefficients and electrical conductivities of n-type doped ScSX monolayers contribute to their excellent power factors (24.69, 25.66, and 24.99 mW/K2·m for ScSCl, ScSBr and ScSI at 300 K, respectively). Based on the excellent power factor and low thermal conductivity, the maximum values of the figure of merit are calculated to be 2.68, 3.39, and 3.21 for ScSCl, ScSBr, and ScSI monolayers at 700 K, respectively. Our research provides valuable insights into the phonon thermal transport of ScSX monolayers and suggests a promising approach to address high-order anharmonicity.

Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates

High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of gallium nitride (GaN) devices has been realized. However, the lack of systematic analysis on the heat transfer across the GaN-BAs interface hampers the practical applications. In this study, by constructing the accurate and high-efficient machine learning interatomic potentials, we perform multiscale simulations of the GaN-BAs heterostructures. Ultrahigh interfacial thermal conductance of 260 MW m-2K-1 is achieved, which lies in the well-matched lattice vibrations of BAs and GaN. The strong temperature dependence of interfacial thermal conductance is found between 300 to 450 K. Moreover, the competition between grain size and boundary resistance is revealed with size increasing from 1 nm to 1000 μm. Such deep-potential equipped multiscale simulations not only promote the practical applications of BAs cooling substrates in electronics, but also offer approach for designing advanced thermal management systems.

Fillers and methods to improve the effective (out-plane) thermal conductivity of polymeric thermal interface materials - A review

The internet of things and growing demand for smaller and more advanced devices has created the problem of high heat production in electronic equipment, which greatly reduces the work performance and life of the electronic instruments. Thermal interface material (TIM) is placed in between heat generating micro-chip and the heat dissipater to conduct all the produced heat to the heat sink. The development of suitable TIM with excellent thermal conductivity (TC) in both in-plane and through-plane directions is a very important need at present. For efficient thermal management, polymer composites are potential candidates. But in general, their thermal conductivity is low compared to that of metals. The filler integration into the polymer matrix is one of the two approaches used to increase the thermal conductivity of polymer composites and is also easy to scale up for industrial production. Another way to achieve this is to change the structure of polymer chains, which fall out of the scope of this work. In this review, considering the first approach, the authors have summarized recent developments in many types of fillers with different scenarios by providing multiple cases with successful strategies to improve through-plane thermal conductivity (TPTC) (k⊥). For a better understanding of TC, a comprehensive background is presented. Several methods to improve the effective (out-plane) thermal conductivity of polymer composites and different theoretical models for the calculation of TC are also discussed. In the end, it is given a detailed conclusion that provides drawbacks of some fillers, multiple significant routes recommended by other researchers to build thermally conductive polymer composites, future aspects along with direction so that the researchers can get a guideline to design an effective polymer-based thermal interface material.

Effect of atomic substitution and structure on thermal conductivity in monolayers H-MN and T-MN (M = B, Al, Ga)

Finding materials with suitable thermal conductivity (κ) is crucial for improving energy efficiency, reducing carbon emissions, and achieving sustainability. Atomic substitution and structural adjustments are commonly used methods. By comparing the κ of two different structures of two-dimensional (2D) IIIA-nitrides and their corresponding carbides, we explored whether atomic substitution has the same impact on κ in different structures. All eight materials exhibit normal temperature dependence, with κ decreasing as the temperature rises. Both structures are single atomic layers of 2D materials, forming M-N bonds, with the difference being that H-MN consists of hexagonal rings, while T-MN consists of tetragonal and octagonal rings. 2D IIIA-nitrides provide a good illustration of the impact of atomic substitution and structure on κ. On a logarithmic scale of κ, it approximates two parallel lines, indicating that different structures exhibit similar trends of κ reduction under the same conditions of atomic substitution. We analyzed the mechanisms behind the decreasing trend in κ from a phonon mode perspective. The main reason for the decrease in κ is that heavier atoms lower lattice vibrations, reducing phonon frequencies. Electronegativity increases, altering bonding characteristics and increasing anharmonicity. Reduced symmetry in complex structures decreases phonon group velocities and enhances phonon anharmonicity, leading to decreased phonon lifetimes. It's noteworthy that we found that atomic substitution and structure significantly affect hydrodynamic phonon transport as well. Both complex structures and atomic substitution simultaneously reduce the effects of hydrodynamic phonon transport. By comparing the impact of κ on two different structures of 2D IIIA-nitrides and their corresponding carbides, we have deepened our understanding of phonon transport in 2D materials. Heavier atomic substitution and more complex structures result in reduced κ and decreased hydrodynamic phonon transport effects. This research is likely to have a significant impact on the study of micro- and nanoscale heat transfer, including the design of materials with specific heat transfer properties for future applications.

Enhanced Thermal Conductivity of High-Density Polyethylene Composites with Hybrid Fillers of Flaky and Spherical Boron Nitride Particles

The synergistic effect between different fillers plays a crucial role in determining the performance of composites. In this work, spherical boron nitride (BN) and flaky BN are used as hybrid fillers to improve the thermal conductivity (TC) of high-density polyethylene (HDPE) composites. A series of HDPE composites were prepared by adjusting the mass ratio (1:0, 4:1, 2:1, 1:1, 1:2, 1:4, and 0:1) of spherical BN and flaky BN. The SEM results indicate that the spherical BN (with a particle size of 3 μm) effectively filled the gaps between the flaky BN (with a particle size of 30 μm), leading to the formation of more continuous heat conduction paths with the composite. Remarkably, when the mass ratio of spherical BN to flaky BN was set to 1:4 (with a total BN filling amount of 30 wt%), the TC of the composite could reach up to 1.648 Wm-1K-1, which is obviously higher than that of the composite containing a single filler, realizing the synergistic effect of the hybrid fillers. In addition, the synergistic effect of fillers also affects the thermal stability and crystallization behavior of composites. This work is of great significance for optimizing the application of hybrid BN fillers in the field of thermal management.

Giant thermal rectification efficiency by geometrically enhanced asymmetric non-linear radiation

Thermal rectification is an asymmetric heat transport phenomenon where thermal conductance changes depending on the temperature gradient direction. The experimentally reported efficiency of thermal rectification materials and devices, which are applicable for a wide range of temperatures, is relatively low. Here we report a giant thermal rectification efficiency of 218% by maximizing asymmetry in parameters of the Stefan-Boltzmann law for highly non-linear thermal radiation. The asymmetry in emissivity is realized by sputter-depositing manganese (ε = ∼0.38) on the top right half surface of a polyurethane specimen (ε = ∼0.98). The surface area of the polyurethane side is also dramatically increased (1302%) by 3D printing to realize asymmetry in geometry. There is an excellent agreement between the experimentally measured temperature profiles and finite element simulation results, demonstrating the reliability of the analysis. Machine learning analysis reveals that the surface area is a dominant factor for thermal rectification and suggests novel light-weight designs with high efficiencies. This work may find applications in energy efficient thermal rectification management of electronic devices and housings.

Extremely Large Response of Phonon Coherence in Twisted Penta-NiN2 Bilayer

Twisting has recently been demonstrated as an effective strategy for tuning the interactions between particles or quasi-particles in layered materials. Motivated by the recent experimental synthesis of pentagonal NiN2 sheet [ACS Nano 2021, 15, 13539], for the first time, the response of phonon coherence to twisting in bilayer penta-NiN2 , going beyond the particle-like phonon transport is studied. By using the unified theory of phonon transport and high order lattice anharmonicity, together with the self-consistent phonon theory, it is found that the lattice thermal conductivity is reduced by 80.6% from 33.35 to 6.47 W m-1 K-1 at 300 K when the layers are twisted. In particular, the contribution of phonon coherence is increased sharply by an order of magnitude, from 0.21 to 2.40 W m-1 K-1 , due to the reduced differences between the phonon frequencies and enhanced anharmonicity after the introduction of twist. The work provides a fundamental understanding of the phonon interaction in twisted pentagonal sheets.

Complex role of strain engineering of lattice thermal conductivity in hydrogenated graphene-like borophene induced by high-order phonon anharmonicity

Strain engineering has been used as a versatile tool for regulating the thermal transport in various materials as a result of the phonon frequency shift. On the other hand, the phononic bandgap can be simultaneously tuned by the strain, which can play a critical role in wide phononic bandgap materials due to the high-order phonon anharmonicity. In this work, we investigate the complex role of uniaxial tensile strain on the lattice thermal conductivity of hydrogenated graphene-like borophene, by using molecular dynamics simulations with a machine learning potential. Our findings highlight a novel and intriguing phenomenon that the thermal conductivity in the armchair direction is non-monotonically dependent on the uniaxial armchair strain. Specifically, we uncover that the increase of phonon group velocity and the decrease of three-phonon scattering compete with the enhancement of four-phonon scattering under armchair strain, leading to the non-monotonic dependence. The enhanced four-phonon scattering originates from the unique bridged B-H bond that can sensitively control the phononic bandgap under armchair strain. This anomalous non-monotonic strain-dependence highlights the complex interplay between different mechanisms governing thermal transport in 2D materials with large phononic bandgaps. Our study offers valuable insights for designing innovative thermal management strategies based on strain.

Non-Perturbative Determination of Isotope-induced Anomalous Vibrational Physics

In general, vibrational physics has been well described by quantum perturbation theory to provide footprint characteristics for common crystals. However, despite weak phonon anharmonicity, the recently discovered cubic crystals have shown anomalous vibrational dynamics with elusive fundamental origin. Here, we developed a non-perturbative ab initio approach, in together with spectroscopy and high-pressure experiments, to successfully determine the exact dynamic evolutions of the vibrational physics for the first time. We found that the local fluctuation and coupling isotopes significantly dictate the vibrational spectra, through the Brillouin zone folding that has been previously ignored in literature. By decomposing vibrational spectra into individual isotope eigenvectors, we observed both positive and negative contributions to Raman intensity from constitutional atoms (10B, 11B, 75As or 31P). Importantly, our non-perturbative theory predicts that a novel vibrational resonance appears at high hydrostatic pressure due to broken translational symmetry, which was indeed verified by experimental measurement under a pressure up to 31.5 GPa. Our study develops fundamental understandings for the anomalous lattice physics under the failure of quantum perturbation theory and provides a new approach in exploring novel transport phenomena for materials of extreme properties.

Heat transfer mechanism in graphene reinforced PEEK nanocomposites

The thermal conductivity of graphene is in the range of 3000-5000 W m-1 K-1, showing great potential in high thermal conductivity devices. However, the thermal conductivity of graphene-reinforced polymer is typically lower than 10 W m-1 K-1, which is far from theoretical expectations. To understand the mechanisms of heat transfer in graphene-reinforced polymers, this work investigated the effect of graphene addition on the thermal conductive performance of polyetheretherketone (PEEK) matrix. The study examined the number of layers, deflection angles, and interlayer distances using molecular dynamics (MD) simulations. The results showed that the improvement of thermal conductivity of PEEK nanocomposite was not only related to the content of graphene but also to the angle between the benzene ring in the molecular chain of PEEK and the transfer direction of heat flow. Increasing the number of graphene layers is more beneficial to the enhancement of thermal conductivity. In particular, the enhancement of thermal conductivity is most significant when the number of graphene layers is the same, and the interlayer distance is less than the truncation radius.

Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with Ultraviolet-Visible Spectroscopy: A Case Study for Cubic Boron Arsenide

The Tauc plot is widely used to determine the bandgap of semiconductors, but the actual plot often exhibits significant baseline absorption below the expected bandgap, leading to bandgap discrepancies from two different extrapolations. In this work, we first discuss the origin of baseline absorption and show that both extrapolation methods can produce significant errors by simulating Tauc plots with varying levels of baseline absorption. We then propose and experimentally verify a new method that idealizes the absorption spectrum by removing its baseline before constructing the Tauc plot. Finally, we apply this new method to cubic boron arsenide (c-BAs), resolve its bandgap discrepancies, and obtain a converging bandgap of 1.835 eV based on both previous and new transmission spectra. The method is applicable to both indirect and direct bandgap semiconductors with absorption spectrum measured via transmission or diffuse reflectance, which will become essential to obtain accurate values of their bandgaps.

Electronic and valleytronic properties of crystalline boron-arsenide tuned by strain and disorder

Ab initio density functional theory (DFT) and DFT plus coherent potential approximation (DFT + CPA) are employed to reveal, respectively, the effect of in-plane strain and site-diagonal disorder on the electronic structure of cubic boron arsenide (BAs). It is demonstrated that tensile strain and static diagonal disorder both reduce the semiconducting one-particle band gap of BAs, and a V-shaped p-band electronic state emerges - enabling advanced valleytronics based on strained and disordered semiconducting bulk crystals. At biaxial tensile strains close to 15% the valence band lineshape relevant for optoelectronics is shown to coincide with one reported for GaAs at low energies. The role played by static disorder on the As sites is to promote p-type conductivity in the unstrained BAs bulk crystal, consistent with experimental observations. These findings illuminate the intricate and interdependent changes in crystal structure and lattice disorder on the electronic degrees of freedom of semiconductors and semimetals.

Vertical Array of Graphite Oxide Liquid Crystal by Microwire Shearing for Highly Thermally Conductive Composites

Excellent through-plane thermally conductive composites are highly demanded for efficient heat dissipation. Giant sheets have large crystalline domain and significantly reduce interface phonon scattering, making them promising to build highly thermally conductive composites. However, realizing vertical orientation of giant sheets remains challenging due to their enormous mass and huge hydrodynamic drag force. Here, we achieve highly vertically ordered liquid crystals of giant graphite oxide (more than 100 µm in lateral dimension) by microwire shearing, which endows the composite with a recorded through-plane thermal conductivity of 94 W m^-1 K^-1 . Microscale shearing fields induced by vertical motion of microwires conquer huge hydrodynamic energy barrier and vertically reorient giant sheets. The resulting liquid crystals exhibit extremely retarded relaxation and impart large-scale vertical array with bidirectional ordering degree as high as 0.82. The graphite array-based composites demonstrate an ultrahigh thermal enhancement efficiency of over 35 times per unit volume. Furthermore, the composites improve cooling efficiency by 93% for thermal management tests compared to commercial thermal interface materials. This work offers a novel methodology to precisely manipulate the orientation of giant particles and promote large-scale fabrication of vertical array with advanced functionalities.

Intervalley scattering induced significant reduction in lattice thermal conductivities for phosphorene

The thermal transport properties of buckled phosphorene (β-P) and antimonene (β-Sb) are investigated using first-principles methods. The large acoustic-optical phonon gaps of 3.8 THz and 2.2 THz enable the four-phonon interaction to play an important role in phonon scattering for both β-P and β-Sb. Considering the electron-phonon coupling, the lattice thermal conductivity can further undergo 84% decrease to 4.9 W mK^-1 for p-type β-P at n = 5 × 10¹³ cm^-2. By quantitatively describing the scattering probability of electrons in different paths combined with electron-phonon coupling matrix element analysis, it is found that multi-valley features of electronic band structure and strong electron-phonon coupling strength make electrons have strong intervalley scattering behavior in β-P. The former plays an important role in the energy conservation condition of the scattering process, and the latter determines the selection rule. Our work elucidates the contribution of higher-order phonon interactions as well as electron-phonon coupling effects to lattice thermal conductivity, and provides a new idea for finding materials with low lattice thermal conductivity induced by intervalley scattering.

Lattice Thermal Conductivity of Monolayer InSe Calculated by Machine Learning Potential

The two-dimensional post-transition-metal chalcogenides, particularly indium selenide (InSe), exhibit salient carrier transport properties and evince extensive interest for broad applications. A comprehensive understanding of thermal transport is indispensable for thermal management. However, theoretical predictions on thermal transport in the InSe system are found in disagreement with experimental measurements. In this work, we utilize both the Green-Kubo approach with deep potential (GK-DP), together with the phonon Boltzmann transport equation with density functional theory (BTE-DFT) to investigate the thermal conductivity (κ) of InSe monolayer. The κ calculated by GK-DP is 9.52 W/mK at 300 K, which is in good agreement with the experimental value, while the κ predicted by BTE-DFT is 13.08 W/mK. After analyzing the scattering phase space and cumulative κ by mode-decomposed method, we found that, due to the large energy gap between lower and upper optical branches, the exclusion of four-phonon scattering in BTE-DFT underestimates the scattering phase space of lower optical branches due to large group velocities, and thus would overestimate their contribution to κ. The temperature dependence of κ calculated by GK-DP also demonstrates the effect of higher-order phonon scattering, especially at high temperatures. Our results emphasize the significant role of four-phonon scattering in InSe monolayer, suggesting that combining molecular dynamics with machine learning potential is an accurate and efficient approach to predict thermal transport.

Spin-Orbit-Coupling-Induced Topological Transition and Anomalously Strong Intervalley Scattering in Two-Dimensional Bismuth Allotropes with Enhanced Thermoelectric Performances

The convergence of multivalley bands is originally believed to be beneficial for thermoelectric performance by enhancing the charge conductivity while preserving the Seebeck coefficients, based on the assumption that electron interband or intervalley scattering effects are totally negligible. In this work, we demonstrate that β-Bi with a buckled honeycomb structure experiences a topological transition from a normal insulator to a Z₂ topological insulator induced by spin-orbit coupling, which subsequently increases the band degeneracy and is probably beneficial for enhancement of the thermoelectric power factor for holes. Therefore, strong intervalley scattering can be observed in both band-convergent β- and aw-Bi monolayers. Compared to β-Bi, aw-Bi with a puckered black-phosphorus-like structure possesses high carrier mobilities with 318 cm²/(V s) for electrons and 568 cm²/(V s) for holes at room temperature. We also unveil extraordinarily strong fourth phonon-phonon interactions in these bismuth monolayers, significantly reducing their lattice thermal conductivities at room temperature, which is generally anomalous in conventional semiconductors. Finally, a high thermoelectric figure of merit (zT) can be achieved in both bismuth monolayers, especially for aw-Bi with an n-type zT value of 2.2 at room temperature. Our results suggest that strong fourth phonon-phonon interactions are crucial to a high thermoelectric performance in these materials, and two-dimensional bismuth is probably a promising thermoelectric material due to its enhanced band convergence induced by the topological transition.

Solid-state thermal rectification of bilayers by asymmetric elastic modulus

A highly efficient thermal rectification applicable to large panels still needs to be developed. Here, we experimentally achieve a high thermal rectification efficiency of 33% by carefully engineering elastic modulus asymmetry in a centimeter-scale bilayered silver-graphene oxide sponge. The thermal conduction primarily occurs in the out-of-plane direction, and the forward heat flow direction is from the hard silver to the soft graphene oxide. Surprisingly, the forward heat flow direction is reversed when a silver layer is formed on a harder polystyrene foam. The forward direction is always from the harder side to the softer side, and the asymmetry in elastic modulus is suggested as a possible mechanism based on the one-dimensional Frenkel-Kontorova (FK) model. The finite element analysis indicates that other mechanisms such as temperature-dependent thermal conductivity and radiation asymmetry cannot explain the high rectification efficiency. This scalable work over a wide temperature range may find immediate industrial applications.

Enhanced thermal properties of epoxy composites by constructing thermal conduction networks with low content of three-dimensional graphene

Micro/nano electronic devices heat dissipation depends heavily on the thermal interface materials (TIMs). Despite notable progress, it is hard to efficaciously enhance the thermal properties of the hybrid TIMs with high-load additives due to an absence of effective heat transfer routes. Herein, the low content of three-dimensional (3D) graphene with interconnected networks is adopted as the additive to improve the thermal properties of epoxy composite TIMs. The thermal diffusivity and thermal conductivity of the as-prepared hybrids were dramatically improved by constructing thermal conduction networks after adding 3D graphene as fillers. The 3D graphene/epoxy hybrid's optimal thermal characteristics were observed at 1.5 wt% of 3D graphene content, corresponding to a maximum enhancement of 683%. Besides, heat transfer experiments were further performed to determine the superb heat dissipation potential of the 3D graphene/epoxy hybrids. Moreover, the 3D graphene/epoxy composite TIM was also applied to high-power LED to improve heat dissipation. It effectively reduced the maximum temperature from 79.8 °C to 74.3 °C. These results are beneficial for the better cooling performance of electronic devices and provide useful guidelines for advancing the next-generation TIMs.

Activated Lone-Pair Electrons Lead to Low Lattice Thermal Conductivity: A Case Study of Boron Arsenide

Reducing thermal conductivity (κ) is of great significance to lots of applications, such as thermal insulation, thermoelectrics, etc. In this study, we propose an effective approach for realizing low κ by introducing lone-pair electrons or making the lone-pair electrons stereochemically active through bond nanodesigning. By cutting at the (111) cross section of the three-dimensional cubic boron arsenide (c-BAs), the κ is lowered by more than 1 order of magnitude in the resultant two-dimensional graphene-like BAs (g-BAs). The underlying mechanism of activating lone-pair electrons is analyzed based on the comparative study on the thermal transport properties and electronic structures of g-BAs, c-BAs, graphene, and diamond (c-BAs → g-BAs vs diamond → graphene). The proposed approach for realizing low κ and the underlying mechanism uncovered in this study would largely benefit the design of advanced thermal functional materials, especially in future research involving novel materials for energy applications.

Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction

Developing advanced thermal interface materials (TIMs) to bridge heat-generating chip and heat sink for constructing an efficient heat transfer interface is the key technology to solve the thermal management issue of high-power semiconductor devices. Based on the ultra-high basal-plane thermal conductivity, graphene is an ideal candidate for preparing high-performance TIMs, preferably to form a vertically aligned structure so that the basal-plane of graphene is consistent with the heat transfer direction of TIM. However, the actual interfacial heat transfer efficiency of currently reported vertically aligned graphene TIMs is far from satisfactory. In addition to the fact that the thermal conductivity of the vertically aligned TIMs can be further improved, another critical factor is the limited actual contact area leading to relatively high contact thermal resistance (20-30 K mm2 W-1) of the "solid-solid" mating interface formed by the vertical graphene and the rough chip/heat sink. To solve this common problem faced by vertically aligned graphene, in this work, we combined mechanical orientation and surface modification strategy to construct a three-tiered TIM composed of mainly vertically aligned graphene in the middle and micrometer-thick liquid metal as a cap layer on upper and lower surfaces. Based on rational graphene orientation regulation in the middle tier, the resultant graphene-based TIM exhibited an ultra-high thermal conductivity of 176 W m-1 K-1. Additionally, we demonstrated that the liquid metal cap layer in contact with the chip/heat sink forms a "liquid-solid" mating interface, significantly increasing the effective heat transfer area and giving a low contact thermal conductivity of 4-6 K mm2 W-1 under packaging conditions. This finding provides valuable guidance for the design of high-performance TIMs based on two-dimensional materials and improves the possibility of their practical application in electronic thermal management.

Anomalous thermal transport under high pressure in boron arsenide

High pressure represents extreme environments and provides opportunities for materials discovery^1-8. Thermal transport under high hydrostatic pressure has been investigated for more than 100 years and all measurements of crystals so far have indicated a monotonically increasing lattice thermal conductivity. Here we report in situ thermal transport measurements in the newly discovered semiconductor crystal boron arsenide, and observe an anomalous pressure dependence of the thermal conductivity. We use ultrafast optics, Raman spectroscopy and inelastic X-ray scattering measurements to examine the phonon bandstructure evolution of the optical and acoustic branches, as well as thermal conductivity under varied temperatures and pressures up to 32 gigapascals. Using atomistic theory, we attribute the anomalous high-pressure behaviour to competitive heat conduction channels from interactive high-order anharmonicity physics inherent to the unique phonon bandstructure. Our study verifies ab initio theory calculations and we show that the phonon dynamics-resulting from competing three-phonon and four-phonon scattering processes-are beyond those expected from classical models and seen in common materials. This work uses high-pressure spectroscopy combined with atomistic theory as a powerful approach to probe complex phonon physics and provide fundamental insights for understanding microscopic energy transport in materials of extreme properties.

High thermal conductivity in wafer-scale cubic silicon carbide crystals

High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m^-1K^-1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.

Direct Evidence on Effect of Oxygen Dissolution on Thermal and Electrical Conductivity of AlN Ceramics Using Al Solid-State NMR Analysis

Aluminum nitride, with its high thermal conductivity and insulating properties, is a promising candidate as a thermal dissipation material in optoelectronics and high-power logic devices. In this work, we have shown that the thermal conductivity and electrical resistivity of AlN ceramics are primarily governed by ionic defects created by oxygen dissolved in AlN grains, which are directly probed using ²⁷Al NMR spectroscopy. We find that a 4-coordinated AlN₃O defect (O_N) in the AlN lattice is changed to intermediate AlNO₃, and further to 6-coordinated AlO₆ with decreasing oxygen concentration. As the aluminum vacancy (V_Al) defect, which is detrimental to thermal conductivity, is removed, the overall thermal conductivity is improved from 120 to 160 W/mK because of the relatively minor effect of the AlO₆ defect on thermal conductivity. With the same total oxygen content, as the AlN₃O defect concentration decreases, thermal conductivity increases. The electrical resistivity of our AlN ceramics also increases with the removal of oxygen because the major ionic carrier is V_Al. Our results show that to enhance the thermal conductivity and electrical resistivity of AlN ceramics, the dissolved oxygen in AlN grains should be removed first. This understanding of the local structure of Al-related defects enables us to design new thermal dissipation materials.

Machine Learning for Harnessing Thermal Energy: From Materials Discovery to System Optimization

Recent advances in machine learning (ML) have impacted research communities based on statistical perspectives and uncovered invisibles from conventional standpoints. Though the field is still in the early stage, this progress has driven the thermal science and engineering communities to apply such cutting-edge toolsets for analyzing complex data, unraveling abstruse patterns, and discovering non-intuitive principles. In this work, we present a holistic overview of the applications and future opportunities of ML methods on crucial topics in thermal energy research, from bottom-up materials discovery to top-down system design across atomistic levels to multi-scales. In particular, we focus on a spectrum of impressive ML endeavors investigating the state-of-the-art thermal transport modeling (density functional theory, molecular dynamics, and Boltzmann transport equation), different families of materials (semiconductors, polymers, alloys, and composites), assorted aspects of thermal properties (conductivity, emissivity, stability, and thermoelectricity), and engineering prediction and optimization (devices and systems). We discuss the promises and challenges of current ML approaches and provide perspectives for future directions and new algorithms that could make further impacts on thermal energy research.

Enhancing the anti-oxidation stability of vapor-crystallized arsenic crystals via introducing iodine

The oxidation of arsenic restricts its application in high-performance electronic devices and functional materials. Herein, a removable iodine-regulation method was proposed for the first time to enhance the anti-oxidation behavior of arsenic. In a gradient of 500-650 ℃, the introduction of 0.6-5.0 at% iodine into arsenic vapor could regulate an arsenic crystal. The oxygen content on the regulated arsenic crystal surface was lowered below 2.5 at% after exposure to ambient conditions for 96 h, reducing over 90% compared with the control group. The residual iodine barrier, which was mainly in the As-I₂ state, suppressed the long-term oxidation of arsenic. First-principles calculation suggested that the adsorbed I₂ weakened the delocalization of lone-pair electrons and inhibited charge transfer from the arsenic surface. Iodine regulation stabilized arsenic surface, which preferred (003) or (012) facets. Their surface energies were 22.4 meV and 47.6 meV, respectively. The synergistic effect of surface stabilization and I₂ passivation lowered the surface energy and continuously slowed the oxidation of arsenic. Therefore, iodine regulation comprehensively enhanced the anti-oxidation properties of arsenic. Moreover, heating at 200 ℃ left the arsenic surface iodine content below 0.1 at% with little variation in structure. The improved anti-oxidation property of arsenic preserves resources for further advanced applications.

Four-phonon and electron-phonon scattering effects on thermal properties in two-dimensional 2H-TaS2

Thermal transport characteristics of monolayer trigonal prismatic tantalum disulfide (2H-TaS₂) are investigated using first-principles calculations combined with the Boltzmann transport equation. Due to a large acoustic-optical phonon gap of 1.85 THz, the four-phonon (4ph) scattering significantly reduces the room-temperature phononic thermal conductivity (κ_ph). With the further inclusion of phonon-electron scattering, κ_ph reduces to 1.78 W mK^-1. Nevertheless, the total thermal conductivity (κ_total) of 7.82 W mK^-1 is dominated by the electronic thermal conductivity (κ_e) of 6.04 W mK^-1. Due to the electron-phonon coupling, κ_e differs from the typical estimation based on the Wiedemann-Franz law with a constant Sommerfeld value. This work provides new insights into the physical mechanisms for thermal transport in metallic 2D systems with strong anharmonic and electron-phonon coupling effects. The phonon scattering beyond three-phonon (3ph) scattering and even κ_e are typically overlooked in computations, and the constant Sommerfeld value is widely used for separating κ_e and κ_ph from the experimental thermal conductivity. These conclusions have implications for both the computational and experimental measurements of the thermal properties of transition metal dichalcogenides.

High ambipolar mobility in cubic boron arsenide

Semiconductors with high thermal conductivity and electron-hole mobility are of great importance for electronic and photonic devices as well as for fundamental studies. Among the ultrahigh-thermal conductivity materials, cubic boron arsenide (c-BAs) is predicted to exhibit simultaneously high electron and hole mobilities of >1000 centimeters squared per volt per second. Using the optical transient grating technique, we experimentally measured thermal conductivity of 1200 watts per meter per kelvin and ambipolar mobility of 1600 centimeters squared per volt per second at the same locations on c-BAs samples at room temperature despite spatial variations. Ab initio calculations show that lowering ionized and neutral impurity concentrations is key to achieving high mobility and high thermal conductivity, respectively. The high ambipolar mobilities combined with the ultrahigh thermal conductivity make c-BAs a promising candidate for next-generation electronics.

High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy

Semiconducting cubic boron arsenide (c-BAs) has been predicted to have carrier mobility of 1400 square centimeters per volt-second for electrons and 2100 square centimeters per volt-second for holes at room temperature. Using pump-probe transient reflectivity microscopy, we monitored the diffusion of photoexcited carriers in single-crystal c-BAs to obtain their mobility. With near-bandgap 600-nanometer pump pulses, we found a high ambipolar mobility of 1550 ± 120 square centimeters per volt-second, in good agreement with theoretical prediction. Additional experiments with 400-nanometer pumps on the same spot revealed a mobility of >3000 square centimeters per volt-second, which we attribute to hot electrons. The observation of high carrier mobility, in conjunction with high thermal conductivity, enables an enormous number of device applications for c-BAs in high-performance electronics and optoelectronics.

Heat Conductor-Insulator Transition in Electrochemically Controlled Hybrid Superlattices

Designing materials with ultralow thermal conductivity has broad technological impact, from thermal protection to energy harvesting. Low thermal conductivity is commonly observed in anharmonic and strongly disordered materials, yet a microscopic understanding of the correlation to atomic motion is often lacking. Here we report that molecular insertion into an existing two-dimensional layered lattice structure creates a hybrid superlattice with extremely low thermal conductivity. Vibrational characterization and ab initio molecular dynamics simulations reveal strong damping of transverse acoustic waves and significant softening of longitudinal vibrations. Together with spectral correlation analysis, we demonstrate that the molecular insertion creates liquid-like atomic motion in the existing lattice framework, causing a large suppression of heat conduction. The hybrid materials can be transformed into solution-processable coatings and used for thermal protection in wearable electronics. Our work provides a generic mechanism for the design of heat insulators and may further facilitate the engineering of heat conduction based on understanding atomic correlations.

Recent advances in thermally conductive polymer composites

Polymer matrix composites (PMCs) with high thermal conductivity (TC) play an important role in improving the heat dissipation capacity of a new generation of electronic devices, particularly for 5G and aviation applications. Over the last few decades, considerable efforts have been made in the fabrication of highly thermally conductive PMCs. Advances in the thermal conduction mechanism of polymer composites are induced to, and then commonly used thermally conductive fillers are presented. In the following, the factors affecting the TC of polymer composites are discussed in detail, including fillers, interfaces, polymer matrices and processing technologies. Special attention is paid to the thermally conductive fillers. Then, some application areas of thermally conductive polymer composites are introduced. Finally, the deficiencies and future development trends in this research field are put forward. It is expected that this review will provide some beneficial inspiration in improving the TC of PMCs.

Finite-momentum excitons and the role of electron-phonon couplings in the electronic and phonon transport properties of boron arsenide

The emerging semiconductor boron arsenide (BAs) with high thermal conductivity has attracted much attention recently, due to its promising application to overcome the bottleneck of high-density heat generated in power electronics and optoelectronic devices. In this work, based on first-principles calculations, we find that cubic BAs possesses high intrinsic electron/hole mobilities and the ionized impurity scattering plays a more important role in carrier scattering, compared with other scattering processes. The mobilities can be significantly enhanced by 14.9% and 76.2% for electrons and holes, respectively, by strain engineering. The investigation of the optoelectronic properties of indirect semiconductor cubic BAs by considering the many-body excitonic effects reveals that the contribution from finite-momentum excitons to optical properties is larger for photon energy ranging from 2.25 eV to 3.50 eV, compared with that from zero-momentum excitons. Finally, we observe that the phonon-electron couplings to total lattice thermal conductivities are non-trivial at low temperatures. These findings provide new insight into the transport and optoelectronic properties of cubic BAs, which are beneficial for the acceleration of the application of this revolutionary thermal management material.

A van der Waals Ferroelectric Tunnel Junction for Ultrahigh-Temperature Operation Memory

Facing the constant scaling down and thus increasingly severe self-heating effect, developing ultrathin and heat-insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable for high-temperature operation due to their low Curie temperature. Here, by using few-layer α-In₂ Se₃ , a special 2DFM with high Curie temperature, van der Waals (vdW) ferroelectric tunnel junction (FTJ) memories that deliver outstanding and reliable performance at both room and high temperatures are constructed. The vdW FTJs offer a large on/off ratio of 10⁴ at room temperature and still reveal excellent on/off ratio at an ultrahigh temperature of 470 K, which will fail down other 2DFMs. Moreover, long retention and reliable cyclic endurance at high temperature are achieved, showing robust thermal stability of the vdW FTJ memory. The observations of this work demonstrate an exciting promise of α-In₂ Se₃ for reliable service in high temperature either from self-heating or harsh environments.

Improved Thermal and Electromagnetic Shielding of PEEK Composites by Hydroxylating PEK-C Grafted MWCNTs

With the rapid rise of new technologies such as 5G and artificial intelligence, electronic products are becoming smaller and higher power, and there is an increasing demand for electromagnetic interference shielding and thermal conductivity of electronic devices. In this work, hydroxyphenolphthalein type polyetherketone grafted carboxy carbon nanotube (PEK-C-OH-g-MWCNTs-COOH) composites were prepared by esterification reaction. The composites exhibited good thermal conductivity, and compared with (MWCNTs-COOH/PEEK) with randomly distributed fillers, (PEK-C-OH-g-MWCNTs-COOH) composites showed a significant advantage, with the same carbon nanotube content, the thermal conductivity of PEK-C-OH-g-MWCNTs-COOH/PEEK (30 wt%) was 0. 71 W/(m-K), which was 206% higher than that of PEEK and 0.52 W/(m-K) higher than that of MWCNTs-COOH/PEEK (26.1 wt%). In addition, the PEK-C-OH-g-MWCNTs-COOH) composite exhibited excellent electrical conductivity and electromagnetic shielding (SE). The SE of 30 wt% PEK-C-OH-g-MWCNTs-COOH/PEEK is higher than the commercially used standard whose value is 22.9 dB (8.2 GHz). Thus, this work provides ideas for the development of thermally conductive functionalized composites.

Four-Phonon Scattering Effect and Two-Channel Thermal Transport in Two-Dimensional Paraelectric SnSe

In recent years, increased attention has been paid to the study of four-phonon interactions and diffusion transport in three-dimensional (3D) thermoelectric materials because they play an essential role in understanding the thermal transport process. In this work, we study four-phonon scattering and diffusion transport in two-dimensional (2D) thermoelectric materials using the paraelectric phase of 2D SnSe as an example. The inherent soft phonon modes are treated by the self-consistent phonon theory, which considers the temperature-induced renormalization of the phonons. Based on density functional theory and the Peierls-Boltzmann transport equation for phonons, we show that the four-phonon interactions can reduce the thermal conductivity of the 2D SnSe sheet by nearly 40% due to the collapse of soft optical modes, and the contribution of diffusion transport to the total thermal conductivity accounts for 14% at a high temperature of 800 K due to the short phonon mean free path approaching the Ioffe-Regel limit, suggesting the two-channel transport in this system. The results are further confirmed by using the machine learning-assisted molecular dynamics simulations. This work provides a new insight into the physical mechanisms for thermal transport in 2D systems with strong anharmonic effects.

Giant Isotope Effect of Thermal Conductivity in Silicon Nanowires

Isotopically purified semiconductors potentially dissipate heat better than their natural, isotopically mixed counterparts as they have higher thermal conductivity (κ). But the benefit is low for Si at room temperature, amounting to only ∼10% higher κ for bulk ^{28}Si than for bulk natural Si (^{nat}Si). We show that in stark contrast to this bulk behavior, ^{28}Si (99.92% enriched) nanowires have up to 150% higher κ than ^{nat}Si nanowires with similar diameters and surface morphology. Using a first-principles phonon dispersion model, this giant isotope effect is attributed to a mutual enhancement of isotope scattering and surface scattering of phonons in ^{nat}Si nanowires, correlated via transmission of phonons to the native amorphous SiO_{2} shell. The Letter discovers the strongest isotope effect of κ at room temperature among all materials reported to date and inspires potential applications of isotopically enriched semiconductors in microelectronics.

Atomic-scale probing of heterointerface phonon bridges in nitride semiconductor

Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and light-emitting diodes. Here we measure the local phonon spectra across AlN/Si and AlN/Al interfaces using atomically resolved vibrational electron energy-loss spectroscopy in a scanning transmission electron microscope. At the AlN/Si interface, we observe various interface phonon modes, of which the extended and localized modes act as bridges to connect the bulk AlN modes and bulk Si modes and are expected to boost the phonon transport, thus substantially contributing to interface thermal conductance. In comparison, no such phonon bridge is observed at the AlN/Al interface, for which partially extended modes dominate the interface thermal conductivity. This work provides valuable insights into understanding the interfacial thermal transport in nitride semiconductors and useful guidance for thermal management via interface engineering.