Synthesis of LaWN3 nitride perovskite with polar symmetry

High-pressure synthesis of Ruddlesden-Popper nitrides

Layered perovskites with Ruddlesden-Popper-type structures are fundamentally important for low-dimensional properties, for example, photovoltaic hybrid iodides and superconducting copper oxides. Many such halides and oxides are known, but analogous nitrides are difficult to stabilize due to the high cation oxidation states required to balance the anion charges. Here we report the high-pressure synthesis of three single-layer Ruddlesden-Popper (K2NiF4 type) nitrides-Pr2ReN4, Nd2ReN4 and Ce2TaN4-along with their structural characterization and properties. The R2ReN4 materials (R = Pr and Nd) are metallic, and Nd2ReN4 has a ferromagnetic Nd3+ spin order below 15 K. Thermal decomposition gives R2ReN3 with a Peierls-type distortion and chains of Re-Re multiply bonded dimers. Ce2TaN4 has a structural transition driven by octahedral tilting, with local distortions and canted magnetic Ce3+ order evidencing two-dimensional Ce3+/Ce4+ charge ordering correlations. Our work demonstrates that Ruddlesden-Popper nitrides with varied structural, electronic and magnetic properties can be prepared from high-pressure synthesis, opening the door to related layered nitride materials.

Syntropic spin alignment at the interface between ferromagnetic and superconducting nitrides

The magnetic correlations at the superconductor/ferromagnet (S/F) interfaces play a crucial role in realizing dissipation-less spin-based logic and memory technologies, such as triplet-supercurrent spin-valves and 'π' Josephson junctions. Here we report the observation of an induced large magnetic moment at high-quality nitride S/F interfaces. Using polarized neutron reflectometry and DC SQUID measurements, we quantitatively determined the magnetization profile of the S/F bilayer and confirmed that the induced magnetic moment in the adjacent superconductor only exists below T C. Interestingly, the direction of the induced moment in the superconductors was unexpectedly parallel to that in the ferromagnet, which contrasts with earlier findings in S/F heterostructures based on metals or oxides. First-principles calculations verified that the unusual interfacial spin texture observed in our study was caused by the Heisenberg direct exchange coupling with constant J∼4.28 meV through d-orbital overlapping and severe charge transfer across the interfaces. Our work establishes an incisive experimental probe for understanding the magnetic proximity behavior at S/F interfaces and provides a prototype epitaxial 'building block' for superconducting spintronics.

A New Family of High Oxidation State Antiperovskite Nitrides: La3MN5 (M=Cr, Mn and Mo)

Three new nitrides La3MN5 (M=Cr, Mn, and Mo) have been synthesized using a high pressure azide route. These are the first examples of ternary Cs3CoCl5-type nitrides, and show that this (MN4)NLa3 antiperovskite structure type may be used to stabilise high oxidation-state transition metals in tetrahedral molecular [MN4]n- nitridometallate anions. Magnetic measurements confirm that Cr and Mo are in the M6+ state, but the M=Mn phase has an anomalously small paramagnetic moment and large cell volume. Neutron powder diffraction data are fitted using an anion-excess La3MnN5.30 model (space group I4/mcm, a=6.81587(9) Å and c=11.22664(18) Å at 200 K) in which Mn is close to the +7 state. Excess-anion incorporation into Cs3CoCl5-type materials has not been previously reported, and this or other substitution mechanisms may enable many other high oxidation state transition metal nitrides to be prepared.

Nitrogen-Rich Molybdenum Nitride Synthesized in a Crucible under Air

The triple bond in N2 is significantly stronger than the double bond in O2, meaning that synthesizing nitrogen-rich nitrides typically requires activated nitrogen precursors, such as ammonia, plasma-cracked atomic nitrogen, or high-pressure N2. Here, we report a synthesis of nitrogen-rich nitrides under ambient pressure and atmosphere. Using Na2MoO4 and dicyandiamide precursors, we synthesized nitrogen-rich γ-Mo2N3 in an alumina crucible under an ambient atmosphere, heated in a box furnace between 500 and 600 °C. Byproducts of this metathesis reaction include volatile gases and solid Na(OCN), which can be washed away with water. X-ray diffraction and neutron diffraction showed Mo2N3 with a rock salt structure having cation vacancies, with no oxygen incorporation, in contrast to the more common nitrogen-poor rock salt Mo2N with anion vacancies. Moreover, an increase in temperature to 700 °C resulted in molybdenum oxynitride, Mo0.84N0.72O0.27. This work illustrates the potential for dicyandiamide as an ambient-temperature metathesis precursor for an increased effective nitrogen chemical potential under ambient conditions. The classical experimental setting often used for solid-state oxide synthesis, therefore, has the potential to expand the nitride chemistry.

Predicting band gaps of ABN3 perovskites: an account from machine learning and first-principle DFT studies

The present paper is primarily focused on predicting the band gaps of nitride perovskites from machine learning (ML) models. The ML models have been framed from the feature descriptors and band gap values of 1563 inorganic nitride perovskites having formation energies <-0.026 eV and band gaps ranging from ∼1.0 to 3.1 eV. Four supervised ML models such as multi-layer perceptron (MLP), gradient boosted decision tree (GBDT), support vector regression (SVR) and random forest regression (RFR) have been considered to predict the band gaps of the said systems. The accuracy of each model has been tested from mean absolute error, root-mean-square error and determination coefficient R2 values. The bivariate plots between the predicted and input band gaps of the compounds for both the training and test datasets have also been estimated. Additionally, two ABN3-type nitride perovskites CeBN3 (B = Mo, W) have been selected and their electronic band structures and optoelectronic properties have been studied from density functional theory (DFT) calculations. The band gap values of the said compounds have been estimated from DFT calculations at PBE, HSE06, G0W0@PBE, G0W0@HSE06 level of theories. The present study will be helpful in exploring the ML models in predicting the band gaps of nitride perovskites which in turn may bear potential applications in photovoltaic cells and optical luminescent devices.

Tunable and parabolic piezoelectricity in hafnia under epitaxial strain

Piezoelectrics are a class of functional materials that have been extensively used for application in modern electro-mechanical and mechatronics technologies. The sign of longitudinal piezoelectric coefficients is typically positive but recently a few ferroelectrics, such as ferroelectric polymer poly(vinylidene fluoride) and van der Waals ferroelectric CuInP2S6, were experimentally found to have negative piezoelectricity. Here, using first-principles calculation and measurements, we show that the sign of the longitudinal linear piezoelectric coefficient of HfO2 can be tuned from positive to negative via epitaxial strain. Nonlinear and even parabolic piezoelectric behaviors are further found at tensile epitaxial strain. This parabolic piezoelectric behavior implies that the polarization decreases when increasing the magnitude of either compressive or tensile longitudinal strain, or, equivalently, that the strain increases when increasing the magnitude of electric field being either parallel or antiparallel to the direction of polarization. The unusual piezoelectric effects are from the chemical coordination of the active oxygen atoms. These striking piezoelectric features of positive and negative sign, as well as linear and parabolical behaviors, expand the current knowledge in piezoelectricity and broaden the potential of piezoelectric applications towards electro-mechanical and communications technology.

A promising perovskite primary explosive

A primary explosive is an ideal chemical substance for performing ignition in military and commercial applications. For over 150 years, nearly all of the developed primary explosives have suffered from various issues, such as troublesome syntheses, high toxicity, poor stability or/and weak ignition performance. Now we report an interesting example of a primary explosive with double perovskite framework, {(C6H14N2)2[Na(NH4)(IO4)6]}n (DPPE-1), which was synthesized using a simple green one-pot method in an aqueous solution at room temperature. DPPE-1 is free of heavy metals, toxic organic components, and doesn't involve any explosive precursors. It exhibits good stability towards air, moisture, sunlight, and heat and has acceptable mechanical sensitivities. It affords ignition performance on par with the most powerful primary explosives reported to date. DPPE-1 promises to meet the challenges existing with current primary explosives, and this work could trigger more extensive applications of perovskite.

Accessible chemical space for metal nitride perovskites

Building on the extensive exploration of metal oxide and metal halide perovskites, metal nitride perovskites represent a largely unexplored class of materials. We report a multi-tier computational screening of this chemical space. From a pool of 3660 ABN3 compositions covering I-VIII, II-VII, III-VI and IV-V oxidation state combinations, 279 are predicted to be chemically feasible. The ground-state structures of the 25 most promising candidate compositions were explored through enumeration over octahedral tilt systems and global optimisation. We predict 12 dynamically and thermodynamically stable nitride perovskite materials, including YMoN3, YWN3, ZrTaN3, and LaMoN3. These feature significant electric polarisation and low predicted switching electric field, showing similarities with metal oxide perovskites and making them attractive for ferroelectric memory devices.

Polar Nitride Perovskite LaWN3-δ with Orthorhombic Structure

Nitride perovskite LaWN3 has been predicted to be a promising ferroelectric material with unique properties for diverse applications. However, due to the challenging sample preparation at ambient pressure, the crystal structure of this nitride remains unsolved, which results in many ambiguities in its properties. Here, the authors report a comprehensive study of LaWN3 based on high-quality samples synthesized by a high-pressure method, leading to a definitive resolution of its crystal structure involving nitrogen deficiency. Combined with theoretical calculations, these results show that LaWN3 adopts an orthorhombic Pna21 structure with a polar symmetry, possessing a unique atomic polarization along the c-axis. The associated atomic polar distortions in LaWN3 are driven by covalent hybridization of W: 5d and N: 2p orbitals, opening a direct bandgap that explains its semiconducting behaviors. The structural stability and electronic properties of this nitride are also revealed to be closely associated with its nitrogen deficiency. The success in unraveling the structural and electronic ambiguities of LaWN3 would provide important insights into the structures and properties of the family of nitride perovskites.

Predicting the Lattice Thermal Conductivity in Nitride Perovskite LaWN3 from ab initio Lattice Dynamics

Using a density functional theory-based thermal transport model, which includes the effects of temperature (T)-dependent potential energy surface, lattice thermal expansion, force constant renormalization, and higher-order quartic phonon scattering processes, it is found that the recently synthesized nitride perovskite LaWN₃ displays strong anharmonic lattice dynamics manifested into a low lattice thermal conductivity (κ_L ) and a non-standard κ_L ∝T^-0.491 dependence. At high T, the departure from the standard κ_L ∝T^-1 law originates in the dual particle-wave behavior of the heat carrying phonons, which includes vibrations tied to the N atoms. While the room temperature κ_L =2.98 W mK^-1 arises mainly from the conventional particle-like propagation of phonons, there is also a significant atypical wave-like phonon tunneling effect, leading to a 20% glass-like heat transport contribution. The phonon broadening effect lowers the particle-like contribution but increases the glass-like one. Upon T increase, the glass-like contribution increases and dominates above T = 850 K. Overall, the low κ_L with a weak T-dependence points to a new utility for LaWN₃ in energy technology applications, and motivates synthesis and exploration of nitride perovskites.

Recent Development of Halide Perovskite Materials and Devices for Ionizing Radiation Detection

Ionizing radiation such as X-rays and γ-rays has been extensively studied and used in various fields such as medical imaging, radiographic nondestructive testing, nuclear defense, homeland security, and scientific research. Therefore, the detection of such high-energy radiation with high-sensitivity and low-cost-based materials and devices is highly important and desirable. Halide perovskites have emerged as promising candidates for radiation detection due to the large light absorption coefficient, large resistivity, low leakage current, high mobility, and simplicity in synthesis and processing as compared with commercial silicon (Si) and amorphous selenium (a-Se). In this review, we provide an extensive overview of current progress in terms of materials development and corresponding device architectures for radiation detection. We discuss the properties of a plethora of reported compounds involving organic-inorganic hybrid, all-inorganic, all-organic perovskite and antiperovskite structures, as well as the continuous breakthroughs in device architectures, performance, and environmental stability. We focus on the critical advancements of the field in the past few years and we provide valuable insight for the development of next-generation materials and devices for radiation detection and imaging applications.

Theoretical study on ferroelectric nitrides with super-wurtzite structures for solar energy conversion applications

Polarized structured nitride semiconductors are attractive due to their unique and environment-friendly electronic properties. The stability, ferroelectricity and photocatalytic and photovoltaic properties of super-wurtzite Mg₂XN₃ (X = Bi, Mo, Nb, Sb, Ta, Tc and W) were determined based on first principles calculations in this study. The calculated results indicate that Mg₂XN₃ (X = Sb, Ta, Bi and Nb) are stable polar nitrides by phonon frequencies, elastic coefficients and ferroelectric analysis. Mg₂XN₃ (X = Sb, Ta and Nb) with large ferroelectric polarization strength could absorb ultraviolet light to promote photocatalytic water splitting for hydrogen production. Mg₂BiN₃ is a new excellent photovoltaic candidate due to its ideal energy band, high electron mobility, high absorption coefficient and large ferroelectric polarization strength.

Robust Piezoelectricity with Spontaneous Polarization in Monolayer Tellurene and Multilayer Tellurium Film at Room Temperature for Reliable Memory

Robust neuromorphic computing in the Big Data era calls for long-term stable crossbar-array memory cells; however, the elemental segregation in the switch unit and memory unit that inevitably occurs upon cycling breaks the compositional and structural stability, making the whole memory cell a failure. Searching for a novel material without segregation that can be used for both switch and memory units is the major concern to fabricate robust and reliable nonvolatile cross-array memory cells. Tellurium (Te) is found recently to be the only peculiar material without segregation for switching, but the memory function has not been demonstrated yet. Herein, apparent piezoelectricity is experimentally confirmed with spontaneous polarization behaviors in elementary 2D Te, even in monolayer tellurene (0.4 nm), due to the highly oriented polarization of the molecular structure and the non-centrosymmetric lattice structure. A large memory window of 7000, a low working voltage of 2 V, and high on switching current up to 36.6 µA µm^-1 are achieved in the as-fabricated Te-based memory device, revealing the great promise of Te for both switching and memory units in one cell without segregation. The piezoelectric Te with spontaneous polarization provides a platform to build robust, reliable, and high-density logic-in-memory chips in neuromorphic computing.

High-Throughput Selection and Experimental Realization of Two New Ce-Based Nitride Perovskites: CeMoN3 and CeWN3

Nitride perovskites have only been experimentally realized in very few cases despite the widespread existence and commercial importance of perovskite materials. From oxide perovskites used in ultrasonics to halide perovskites that have revolutionized the photovoltaics industry, the discovery of new perovskite materials has historically impacted a wide number of fields. Here, we add two new perovskites, CeWN₃ and CeMoN₃, to the list of experimentally realized perovskite nitrides using high-throughput computational screening and subsequent high-throughput thin film growth techniques. Candidate compositions are first down-selected using a tolerance factor and then thermochemical stability. A novel competing fluorite-family phase is identified for both material systems, which we hypothesize is a transient intermediate phase that crystallizes during the evolution from an amorphous material to a stable perovskite. Different processing routes to overcome the competing fluorite phase and obtain phase-pure nitride perovskites are demonstrated for the CeMoN_3-x and CeWN_3-x material systems, which provide a starting point for the development of future nitride perovskites. Additionally, we find that these new perovskite phases have interesting low-temperature magnetic behavior: CeMoN_3-x orders antiferromagnetically below T _N ≈ 8 K with indications of strong magnetic frustration, while CeWN_3-x exhibits no long-range order down to T = 2 K but has strong antiferromagnetic correlations. This work demonstrates the importance and effectiveness of using high-throughput techniques, both computational and experimental: they are integral to optimize the process of realizing two entirely novel nitride perovskites.

Nanostructured perovskites for nonvolatile memory devices

Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.

Nitride perovskite becomes polar

[Figure: see text].