Atomic to nanoscale chemical fluctuations: The catalyst for enhanced thermoelectric performance in high-entropy materials

High-entropy materials have expanded the frontier for discovering uncharted physicochemical properties. The phenomenon of chemical fluctuation is ubiquitous in high-entropy materials, yet its role in the thermoelectric field is often overlooked. Herein, we designed and synthesized a series of (Mg0.94-nYb0.26Sr0.26Znm)(MgnCd0.69Zn0.69-mNax)(Sb1.74Ca0.26) samples characterized by ultrahigh configurational entropy. These samples exhibit a homogeneous single-phase structure at macroscopic and microscopic scales, yet display notable chemical fluctuations at the atomic to nanoscale. These fluctuations, along with the unusual atomic occupations, lead to an exceptionally low lattice thermal conductivity akin to that of amorphous materials. Combining the optimized carrier concentration and well-maintained carrier mobility, we ultimately achieved a high zT value of 1.2 at 750 kelvin, outperforming most previously reported AB2Sb2-type Zintls. This study underscores that the atomic to nanoscale chemical fluctuations are the crucial catalyst for the enhanced thermoelectric performance in high-entropy materials.

Crystal symmetry modification enables high-ranged in-plane thermoelectric performance in n-type SnSe crystals

SnSe crystal has witnessed significant advancements as a promising thermoelectric material over the past decade. Its in-plane direction shows robust mechanical strength for practical thermoelectric applications. Herein, we optimize the in-plane thermoelectric performance of n-type SnSe by crystal symmetry modification. In particular, we find that Te and Mo alloying continuously enhances the crystal symmetry, thereby increasing the carrier mobility to ~ 422 cm2 V-1 s-1. Simultaneously, the conduction bands converge with the symmetry modification, further improving the electrical transport. Additionally, the lattice thermal conductivity is limited to ~ 1.1 W m-1 K-1 due to the softness of both acoustic and optical branches. Consequently, we achieve a power factor of ~ 28 μW cm-1 K-2 and ZT of ~ 0.6 in n-type SnSe at 300 K. The average ZT reaches ~ 0.89 at 300-723 K. The single-leg device based on the obtained n-type SnSe shows a remarkable efficiency of ~ 5.3% under the ΔT of ~ 300 K, which is the highest reported in n-type SnSe. This work demonstrates the substantial potential of SnSe for practical applications of power generation and waste heat recovery.

Mechanical Alloying: An Advantageous Method for the Development of Mg2Si0.8Sn0.2 and Mg2Si Thermoelectrics Using Commercial and Recyclable Silicon

A comparative study of Bi-doped Si-rich silicide phases, Mg2Si0.8Sn0.2 and Mg2Si, is reported, investigating in parallel two different synthetic routes: the solid-state reaction (SSR) and mechanical alloying (MA). Both synthetic routes produce the desired silicide phases. However, powder XRD Rietveld refinements reveal appreciable Mg and Sn losses for the SSR-developed Mg2Si0.8Sn2, while EDS measurements also confirm Sn losses together with a decrease in the Bi content. This has a strong impact in electrical transport properties, indicating a severe electron doping deficiency. In contrast, the EDS results for MA-based phases are in a good agreement with the nominal values, indicating an effective Bi doping. Moreover, considering the Rietveld refinement results and SEM analysis, notable changes in the content of Mg interstitial atoms at the 4b crystallographic site seem to be correlated with the microstructure features of the two MA compounds. Electrical conductivity and Seebeck coefficient measurements confirm the aforementioned results. In addition, a small reduction in lattice thermal conductivity is observed for the two MA systems due to the nanostructuring effect. At 773 K, ZT values of 0.85 and 0.6 are exhibited for Mg2Si0.8Sn0.2 and Mg2Si, respectively. MA is proven to be an advantageous route for the development of Si-rich phases since it provides a better control of doping and higher precision of produced stoichiometric compositions, while in parallel it is a straightforward and scalable method. The replacement of commercial Si by two types of recycled Si-kerf is also attempted here. The kerf-based materials exhibit small reductions in ZT, giving prominence to the efforts to utilize more effectively recyclable Si.

Synergistic Entropy Engineering with Oxygen Vacancy: Modulating Microstructure for Extraordinary Thermosensitive Property in ReNbO4 Materials

The pursuit of high precision and stability simultaneously in high-temperature thermistor fields is longstanding. However, most spinel or perovskite-structured thermosensitive materials struggle to tolerate prolonged high-temperature environments at the expense of sensitivity and stability. Here, a novel entropy engineering strategy involving vacancies is proposed to balance sensitivity and stability for fergusonite-structured ReNbO4 (Re is a rare earth element) material in extreme environments. The synergistic effect of entropy stabilization and allovalent substitution on the A-site generates unusually high concentrations of oxygen vacancy that improves the electronic structure and structural stability. Moreover, entropy engineering involving oxygen vacancies introduces potent and stable microstructural features including twinned domains, lattice distortion, and lattice reconfigurations, which facilitate stability and accuracy at a wide temperature range, thereby synergistically contributing to excellent thermosensitive properties. As-prepared high-entropy ceramics show low aging drift rates and high-temperature measurement accuracy over the extended temperature range of 223-1423 K, exhibiting a competitive temperature coefficient of resistivity of 0.223%/K at 1423 K. This work not only provides valuable insights into the design of high-temperature thermosensitive sensors but also establishes an effective paradigm for entropy engineering involving vacancies.

s-d Coupling-Induced Dynamic Off-Centering of Cu Drives High Thermoelectric Performance in TlCuS

Seeking new and efficient thermoelectric materials requires a detailed comprehension of chemical bonding and structure in solids at microscopic levels, which dictates their intriguing physical and chemical properties. Herein, we investigate the influence of local structural distortion on the thermoelectric properties of TlCuS, a layered metal sulfide featuring edge-shared Cu-S tetrahedra within Cu2S2 layers. While powder X-ray diffraction suggests average crystallographic symmetry with no distortion in CuS4 tetrahedra, the synchrotron X-ray pair distribution function experiment exposes concealed local symmetry breaking, with dynamic off-centering distortions of the CuS4 tetrahedra. The Cu off-centering is driven by the on-site coupling of filled 3d and unoccupied 4s orbitals (s-d) of Cu through a second-order Jahn-Teller mechanism. Bond softening by the p-d* (S-3p and Cu-3d) antibonding interaction coupled with dynamic off-centering distortions causes significant anharmonicity in the lattice, which acts as a phonon-blocking mechanism conducive to ultralow lattice thermal conductivity (κlat) (∼0.35-0.23 W m-1 K-1 in the ∼296-573 K temperature range) in TlCuS. The synergy between low κlat and multiband electronic structure leads to thermoelectric figure-of-merits (zT) of ∼1 and ∼1.3 at 573 K for pristine TlCuS and TlCu0.98S, respectively, underscoring the potential of metal sulfides as promising high-performance thermoelectrics.

Chemical modulation and defect engineering in high-performance GeTe-based thermoelectrics

Thermoelectric technology plays an important role in developing sustainable clean energy and reducing carbon emissions, offering new opportunities to alleviate current energy and environmental crises. Nowadays, GeTe has emerged as a highly promising thermoelectric candidate for mid-temperature applications, due to its remarkable thermoelectric figure of merit (ZT) of 2.7. This review presents a thorough overview of the advancements in GeTe thermoelectric materials, meticulously detailing the crystal structure, chemical bonding characteristics, band structure, and phonon dynamics to elucidate the underlying mechanisms that contribute to their exceptional performance. Moreover, the phase transition in GeTe introduces unique degrees of freedom that enable multiple pathways for property optimization. In terms of electrical properties, noticeable enhancement can be realized through strategies such as band structure modulation, carrier concentration engineering, and vacancy engineering. For phonon transport properties, by incorporating defect structures with varying dimensions and constructing multi-scale hierarchical architectures, phonons can be effectively scattered across different wavelengths. Additionally, we provide a summary of current research on devices and modules of GeTe. This review encapsulates historical progress while projecting future development trends that will facilitate the practical application of GeTe in alignment with environmentally sustainable objectives.

Achieving Superior Thermoelectric Performance in Methoxy-Functionalized MXenes: The Role of Organic Functionalization

Thermoelectric technology enables the direct and reversible conversion of heat into electrical energy without air pollution. Herein, the stability, electronic structure, and thermoelectric properties of methoxy-functionalized M2C(OMe)2 (M = Sc, Ti, V, Cr, Y, Zr, Nb, Mo, Hf, Ta, and W) were systematically investigated using first-principles calculations and semiclassical Boltzmann transport theory. All MXenes, except those with M = Cr, Mo, and W, can be synthesized by substituting Cl- and Br-functionalized MXenes with deprotonated methanol, with stability governed by the M-O bond strength. Notably, semiconductors Sc2C(OMe)2 and Y2C(OMe)2 exhibit exceptionally high peak ZT values of 15.02 and 12.11 under n-type doping at 900 K, achieving a remarkable thermoelectric conversion efficiency of 53% at a temperature difference of 600 K, outperforming current high-performance thermoelectric materials. This superior performance is attributed to the weak electron-withdrawing nature of the methoxy group, which enhances nonbonding d electrons, combined with flat and degenerate band edges, and strong coupling between acoustic and optical phonons. Together, these features sustain a high Seebeck coefficient, improve electrical conductivity, and suppress lattice thermal conductivity. These findings present an effective organic functionalization strategy for designing high-performance MXenes for industrial applications and offer valuable insights for developing next-generation thermoelectric materials.

Large-area radiation-modulated thermoelectric fabrics for high-performance thermal management and electricity generation

Flexible thermoelectric systems capable of converting human body heat or solar heat into sustainable electricity are crucial for the development of self-powered wearable electronics. However, challenges persist in maintaining a stable temperature gradient and enabling scalable fabrication for their commercialization. Herein, we present a facile approach involving the screen printing of large-scale carbon nanotube (CNT)-based thermoelectric arrays on conventional textile. These arrays were integrated with the radiation-modulated thermoelectric fabrics of electrospun poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) membranes for the low-cost and high-performance wearable self-power application. Combined with the excellent photothermal properties of CNTs, the resulting thermoelectric fabric (0.2 square meters) achieves a substantial ΔT of 37 kelvin under a solar intensity of ~800 watt per square meter, yielding a peak power density of 0.20 milliwatt per square meter. This study offers a pragmatic pathway to simultaneously address thermal management and electricity generation in self-powered wearable applications by efficiently harvesting solar energy.

Helical dislocation-driven plasticity and flexible high-performance thermoelectric generator in α-Mg3Bi2 single crystals

Inorganic plastic semiconductors play a crucial role in the realm of flexible electronics. In this study, we present a cost-effective plastic thermoelectric semimetal magnesium bismuthide (α-Mg3Bi2), exhibiting remarkable thermoelectric performance. Bulk single-crystalline α-Mg3Bi2 exhibits considerable plastic deformation at room temperature, allowing for the fabrication of intricate shapes such as the letters "SUSTECH" and a flexible chain. Transmission electron microscopy, time-of-flight neutron diffraction, and chemical bonding theoretic analyses elucidate that the plasticity of α-Mg3Bi2 stems from the helical dislocation-driven interlayer slip, small-sized Mg atoms induced weak interlayer Mg-Bi bonds, and low modulus of intralayer Mg2Bi22- networks. Moreover, we achieve a power factor value of up to 26.2 µW cm-1 K-2 along the c-axis at room temperature in an n-type α-Mg3Bi2 crystal. Our out-of-plane flexible thermoelectric generator exhibit a normalized power density of 8.1 μW cm-2 K-2 with a temperature difference of 7.3 K. This high-performance plastic thermoelectric semimetal promises to advance the field of flexible and deformable electronics.

Multipocket synergy towards high thermoelectric performance in topological semimetal TaAs2

Charge-carrier compensation in topological semimetals amplifies the Nernst signal and simultaneously degrades the Seebeck coefficient. In this study, we report the simultaneous achievement of both a large Nernst signal and an unsaturating magneto-Seebeck coefficient in a topological nodal-line semimetal TaAs2 single crystal. The unique dual-high transverse and longitudinal thermopowers are attributed to multipocket synergy effects: the combination of a strong phonon-drag effect and the two overlapping highly dispersive conduction and valence bands with electron-hole compensation and high mobility, promising a large Nernst effect; the third Dirac band causes a large magneto-Seebeck effect. High transverse and longitudinal power factors of ~3100 and ~50 μW cm-1 K-2, respectively, are achieved, surpassing those of other topological semimetals and mainstream semiconductors. Our study presents a feasible approach for optimizing the longitudinal and transverse thermopowers in topological semimetals simultaneously and demonstrates the potential of TaAs2 for low temperature solid-state cooling.

Lattice Regularization by Manipulating Over-Stoichiometric Defects Yields High-Performance (Bi,Sb)2Te3 Thermoelectrics

Bi2Te3-based alloys have historically dominated the commercial sector of near-ambient-temperature thermoelectric technology. However, the massive intrinsic defects form the "donor-like" effect and affect the transport properties of Bi2-xSbxTe3 significantly. Here, it is demonstrated that the over-stoichiometric Sb fills Te vacancies and weakens the defect scattering, resulting in a desirable carrier mobility. The boost-generatedSb Te ' ${\mathrm{Sb}}_{{\mathrm{Te}}}^{\mathrm{^{\prime}}}$ antisite defects also compensate for the extra hole carries. Combined with dilute Cu doping, the global microstructural modulation is synergistically promoted, characterized by Sb coherent nanoprecipitates and high-density twins. Benefitting from the decoupled electrical-thermal transport, the peak ZT is improved to ≈1.50 at 350 K, with an average ZT of 1.25 from 300 to 500 K. The further designed and integrated 17-pair power generators exhibit ultrahigh conversion efficiency, reaching 6.7% under a 200 K temperature gradient, and show excellent operational stability. These achievements hold great potential for advancing Bi2Te3-based power generators in low-grade waste heat recovery.

Ultralow Lattice Thermal Conductivity and High ZT Beyond 1 Realized in Bi2S3 Nanocomposites via Bottom-Up Structure Design

Bismuth sulfides (Bi2S3), an n-type thermoelectric material, in expensive, and environmentally friendly. However, it has poor electrical conductivity due to its low electron concentration, and its thermoelectric properties need improvement. By adjusting the properties of microstructural units and then designing and preparing bulk materials, the transport properties are modulated to optimize thermoelectric properties. The textured structure and metal Bi dispersed in grain boundaries improved the carrier mobility, the Cl dopingimproved carrier concentration. The textured structure and metalBi dispersed in grain boundaries improved the carrier mobility, the Cl dopingimproved carrier concentration. The Bi2S3-Cl samples reduce using N2H4·H2O for 5 min at 673 K have a peak power factor (PF) reaching 676.6 µWm-1K-2, more than 6 times that of pristine Bi2S3. Furthermore, the point defects, dislocations, and the micropores caused by a part of Bivolatilization contribute to the strong phonon scattering, resulting in a low lattice thermal conductivity of 0.28 Wm-1K-1 at 623K. Due to the synergistically optimized electrical and thermal transport properties, the values of the maximum thermoelectric figure of merit (ZTmax) and the average thermoelectric figure of merit (ZTave) for the Bi2S3-Cl samples reduce using N2H4·H2O for 5 min are 1.01 at ≈673 K and 0.63 (323-673 K), respectively. This study demonstrates that bottom-up structure design can effectively strategize the improvement of thermoelectric performance.

Local Proton-Mediated Synthesis of a High-Entropy Borate Library

High-entropy compounds (HECs) provide extensive possibilities for exploring distinctive properties and potential applications. However, most HECs reported so far are synthesized by an arduous high-temperature treatment and special equipment, which is clearly not scalable for practical application. Here a scalable room-temperature solution synthetic strategy is reported for a library of high-entropy borates with arbitrary metal component numbers from 5 to 12 up to 3302 kinds in total and more than a hundred grams per operation within one minute. In conjunction with theoretical and in situ investigations, it is uncovered that the highly local concentration of protons at ethanol/aqueous interface is favorable to the creation of a stable thermodynamic microenvironment and a desirable kinetic miscibility reservoir, thus enabling a formation of single-phase borates. With the FeCoNiMoCu high-entropy borate, it is further shows that it functions as a highly active catalyst for catalytic oxygen evolution reaction. The work opens up opportunities for the scalable synthesis of HECs for energy storage and conversion applications.

Atomic-Level Electric Polarization in Entropy-Driven Perovskites for Boosting Dielectric Response

Dielectric oxides with robust relaxation responses are fundamental for electronic devices utilized in energy absorption, conversion, and storage. However, the structural origins governing the dielectric response remain elusive due to the involvement of atomically complex compositional and structural environments. Herein, configurational entropy is introduced as a regulatory factor to precisely control the structural heterogeneity in representative perovskite dielectric oxides. Through advanced structural and electric field visualization studies, a novel quantitative relationship is established between atomic-level structural disorder-induced electric field polarization and macroscopic dielectric properties. The results indicate that the degree of atomic delocalization in perovskite oxides exhibits a near-parabolic trend with increasing entropy, reaching a maximum in medium-entropy perovskite. Correspondingly, the atomic electric field vectors display significant asymmetrical distribution, thus greatly enhancing angstrom-scale electric field polarization. Then, it is experimentally proven that entropy-driven electric polarization can improve the dielectric relaxation behavior characterized by broader frequency and stronger intensity of electromagnetic energy absorption, with improvements of approximately 160% and 413% compared to structurally homogeneous control. This study unveils the quantitative correlation between angstrom-scale electric field polarization and dielectric response in perovskite oxides, offering a novel perspective for exploring the structure-property relationship in dielectric materials.

Entropy-Boosting Intrinsic Elemental Disorder for Advanced Thermoelectric Performance in MoSSe

Entropy design, facilitated by disorder, emerges as a crucial strategy for the performance enhancement of thermoelectric materials. The characteristic average multielement composition of Janus MoSSe offers an opportunity to introduce intrinsic elemental disorder by altering the positions of different atoms, thereby boosting entropy. Here, we explored the thermoelectric performance of the initial MoSSe and various constructed disordered structures through first-principles calculations. The results demonstrated that the intrinsic elemental disorder enables simultaneous optimization of power factor and reduction of thermal conductivity, with the optimal disordered structure achieving a ZT of 2.89 at 700 K, approximately 10 times greater than the initial structure. Atomic disorder directly induces charge disorder, decreasing the polarity and enhancing the charge density of the valence band maximum (VBM) to optimize conductivity. This leads to local atomic energy level resonances, which significantly increase the electronic density of states, enhancing the Seebeck coefficient. Moreover, the disorder considerably intensifies phonon scattering through the compression of phonon bandgap and the increased number of peaks for phonon density of states. The lowest thermal conductivity of the disordered structures reaches 1.02 W·m-1·K-1 at 700 K. Comprehensive analyses were carried out through the examination of phonon lifetime, phonon group velocity, and specific heat. Finally, we quantified structural disorder utilizing entropy and derived thermoelectric performance optimization based on the intrinsic elemental disorder of the Janus materials. Our results demonstrate how control over intrinsic elemental disorder offers an effective avenue for tuning the performance of thermoelectric materials.

Thermoelectric Cooling-Oriented Large Power Factor Realized in N-Type Bi2Te3 Via Deformation Potential Modulation and Giant Deformation

Thermoelectric refrigeration, utilizing Peltier effect, has great potential in all-solid-state active cooling field near room temperature. The performance of a thermoelectric cooling device is highly determined by the power factor of consisting materials besides the figure of merit. In this work, it is demonstrated that successive addition of Cu and Nd can realize non-trivial modulation of deformation potential in n-type room temperature thermoelectric material Bi2Te2.7Se0.3 and result in a significant increment of electron mobility and remarkably enhanced power factor. Following giant hot deformation process improves grain texturing and strengthens inter-layer interaction in Bi2Te2.7Se0.3 lattice, further pushing the power factor to ≈47 µW cm-1 K-2 at 300 K and maximal figure of merit ZTmax to ≈1.34 at 423 K with average ZTave of ≈1.27 at 300-473 K. Moreover, robust compressive strength is enhanced to ≈146.6 MPa. The corresponding finite element simulations demonstrate large temperature differences ΔT of ≈70 K and a maximal coefficient of performance COP ≈ 10.6 (hot end temperature at 300 K), which can be achieved in a ten-pair thermoelectric cooling virtual module. The strategies and results as shown in this work can further advance the application of n-type Bi2Te3 for thermoelectric cooling.

Robustly Boosting Thermoelectric Performance of N-Type PbSe via Lattice Plainification and Dynamic Doping

Ideal thermoelectrics shall possess a high average ZT, which relies on high carrier mobility and appropriate carrier density at operating temperature. However, conventional doping usually results in a temperature-independent carrier concentration, making performance optimization over a wide temperature range be challenging. This work demonstrates the combination of lattice plainification and dynamic doping strategies is an effective route to boost the average ZT of N-type PbSe. Because Sn and Pb have similar ionic radii and electronegativity, this allows Sn to fill the intrinsic Pb vacancies and effectively improves the carrier mobility of PbSe to 1300 cm2 V-1 s-1. Furthermore, a trace amount of Cu is introduced into the Sn-filled PbSe to optimize the carrier concentration. The extra Cu is situated in the interstitial sides of the lattice, which undergoes a dissolution-precipitation process with temperature, leading to a strongly temperature-dependent carrier density in the material. This dynamic doping effectively improves the electrical transport properties and is also valid to suppress the lattice thermal conductivity. Ultimately, the resulting PbSn0.004Se+3‰Cu obtains a maximum ZT of ≈1.7 at 800 K and an average ZT of ≈1.0, with a 7.7% power generation efficiency in a single-arm device, showing significant potential for commercial application.

Decoupled electron-phonon transport in Ag2Se thermoelectric materials through constructing TiO2/MoS2 co-decorated cell-membrane-mimic grain boundaries

Ag2Se has emerged as a promising n-type thermoelectric material; however, its application is limited mainly due to the strongly coupled charge carrier and phonon transport. Enhancing phonon scattering by constructing interfacial complexes often results in low carrier mobility due to its strong carrier scattering resulting from the high energy barrier at the multiphase interface. Inspired by the cell membrane with selective permeability, we construct bio-mimic grain boundaries with TiO2 and MoS2 co-decoration in Ag2Se to decouple electron scattering from strong phonon scattering. The nanostructured TiO2 with a high dielectric constant screens the interfacial Coulomb potential, ensuring efficient carrier transport and reducing the grain boundary barriers, while the few-layer MoS2 provides significant phonon scattering to further reduce the thermal conductivity. This method effectively enhances the zT value of Ag2Se by as much as 60% and also can significantly enhance the theoretical output performance of the thermoelectric device, which highlights the effectiveness of the bio-mimic grain boundary engineering strategy.

Defect Engineering Advances Thermoelectric Materials

Defect engineering is an effective method for tuning the performance of thermoelectric materials and shows significant promise in advancing thermoelectric performance. Given the rapid progress in this research field, this Review summarizes recent advances in the application of defect engineering in thermoelectric materials, offering insights into how defect engineering can enhance thermoelectric performance. By manipulating the micro/nanostructure and chemical composition to introduce defects at various scales, the physical impacts of diverse types of defects on band structure, carrier and phonon transport behaviors, and the improvement of mechanical stability are comprehensively discussed. These findings provide more reliable and efficient solutions for practical applications of thermoelectric materials. Additionally, the development of relevant defect characterization techniques and theoretical models are explored to help identify the optimal types and densities of defects for a given thermoelectric material. Finally, the challenges faced in the conversion efficiency and stability of thermoelectric materials are highlighted and a look ahead to the prospects of defect engineering strategies in this field is presented.

Synergistic Suppression of Bipolar Effect and Lattice Thermal Conductivity Leading to High Average Figure of Merit in Bi0.4Sb1.6Te3 Materials through Alloying with AgSbTe2

Bismuth telluride-based materials have been widely used in commercial thermoelectric applications due to their excellent thermoelectric performance in the near-room-temperature range, yet further improvement of their thermoelectric properties is still necessary. Moreover, the narrow band gap of these materials results in a bipolar effect at elevated temperatures, which causes severe degradation of the thermoelectric performance. In this work, the commercial Bi0.4Sb1.6Te3 was alloyed with AgSbTe2 by using high-energy ball milling method combined with spark plasma sintering. It was found that ball milling can effectively reduce the lattice thermal conductivity of the samples. The alloying of AgSbTe2 leads to a gradual increase in hole carrier concentration, resulting in an enhanced electrical conductivity and optimized power factor. Additionally, the bipolar effect is also weakened due to the increased hole carrier concentration. Furthermore, the substitution of Ag in the Bi/Sb sublattice causes further reduction in the lattice thermal conductivity. Ultimately, the sample alloyed with 0.15 wt % AgSbTe2 demonstrates its best thermoelectric performance with a maximum zT of 1.35 at 393 K, showing a 20.5% improvement compared to the commercial sample. Besides, its average zT reaches a high value of 1.25 between 303 and 483 K, with a 27.6% improvement compared to that of the commercial sample.

Enhancing the Thermoelectric Performance of n-Type Mg3.2Sb1.5Bi0.5 by Reducing Lattice Thermal Conductivity through the Incorporation of Chlorine-Containing Compounds

Mg3Sb2-based thermoelectric materials are characterized by their economic efficiency, nontoxicity, and environmental friendliness and represent a highly promising and eco-friendly functional material for midtemperature applications. To achieve a higher thermoelectric performance, we introduced two compounds, LaCl3 and CeCl3, into Mg3.2Sb1.5Bi0.5 under the guidance of first-principles calculations. The Mg3.2Sb1.5Bi0.5 + 0.03CeCl3 sample reached a maximum ZT value of approximately 1.6 at 723 K. The calculations indicate that two n-type dopants, LaCl3 and CeCl3, can adequately improve the band structure of Mg3Sb2, and the introduction of Cl atoms will also lead to lattice distortion and reduce the lattice thermal conductivity (κL). Experimental results demonstrate that the introduction of Cl atoms efficiently reduces the thermal conductivity while improving the electrical transport properties. Specifically, the Mg3.2Sb1.5Bi0.5 + 0.03CeCl3 sample achieved an exceptionally low κL of 0.3 W m-1 K-1 at 723 K, thereby validating the effectiveness of LaCl3 and CeCl3 doping. This work provides valuable insights into achieving thermoelectric decoupling in Mg3Sb2-based thermoelectric materials.

Impact of valley degeneracy on the thermoelectric properties of zig-zag graphene nanoribbons with staggered sublattice potentials and transverse electric fields

This study investigates the band inversion of flat bands in zig-zag graphene nanoribbons (ZGNRs) using a tight-binding model. The band inversion results from symmetry breaking in the transverse direction, achievable through deposition on specific substrates such as separated silicon carbide or hexagonal boron nitride sheets. Upon band inversion, ZGNRs exhibit electronic structures characterized by valley degeneracy and band gap properties, which can be modulated by transverse electric fields. To explore the impact of this level degeneracy on thermoelectric properties, we employ Green's function techniques to calculate thermoelectric quantities in ZGNR segments with staggered sublattice potentials and transverse electric fields. Two carrier transport scenarios are considered: the chemical potential is positioned above and below the highest occupied molecular orbital. We analyze thermionic-assisted transport (TAT) and direct ballistic transport (DBT). Level degeneracy enhances the electric power factors of ZGNRs by increasing electrical conductance, while the Seebeck coefficient remains robust in the TAT scenario. Conversely, in DBT, the enhancement of the power factor primarily stems from improvements in the Seebeck coefficient at elevated temperatures.

High-Entropy Magnet Enabling Distinctive Thermal Expansions in Intermetallic Compounds

The high-entropy strategy has gained increasing popularity in the design of functional materials due to its four core effects. In this study, we introduce the concept of a "high-entropy magnet (HEM)", which integrates diverse magnetic compounds within a single phase and is anticipated to demonstrate unique magnetism-related properties beyond that of its individual components. This concept is exemplified in AB2-type layered Kagome intermetallic compounds (Ti,Zr,Hf,Nb,Fe)Fe2. It is revealed that the competition among individual magnetic states and the presence of magnetic Fe in originally nonmagnetic high-entropy sites lead to intricate magnetic transitions with temperature. Consequently, unusual transformations in thermal expansion property (from positive to zero, negative, and back to near zero) are observed. Specifically, a near-zero thermal expansion is achieved over a wide temperature range (10-360 K, αv = -0.62 × 10-6 K-1) in the A-site equal-atomic ratio (Ti1/5Zr1/5Hf1/5Nb1/5Fe1/5)Fe2 compound, which is associated with successive deflection of average Fe moments. The HEM strategy holds promise for discovering new functionalities in solid materials.

Thermoelectric properties of XX- and XY-stacked GeS/GeSe van der Waals heterostructures from DFT and BTP calculations

This study utilizes density functional theory (DFT) and the Boltzmann transport equation (BTE) to investigate the structural, electronic, and thermoelectric properties of germanium sulfide (GeS) and germanium selenide (GeSe) monolayers, along with their van der Waals (vdW) heterostructures. We analyzed XX-stacked and XY-stacked configurations, where the XX configuration features direct atomic stacking, while the XY configuration exhibits staggered stacking. Our first-principles calculations indicate that the formation of GeS/GeSe heterostructures results in a reduction of bandgaps compared to their bulk and monolayer counterparts, yielding bandgap values of 0.91 eV for the XX configuration and 0.84 eV for the XY configuration. Stability assessments reveal that the XY configuration is more stable, demonstrating a lattice thermal conductivity of 15.21 W/mK compared to 17.95 W/mK for the XX configuration T 300 K. The thermoelectric properties were systematically evaluated across a temperature range of 300-800 K, revealing high Seebeck coefficients of 1.51 mV/K for the XX heterostructure and 1.39 mV/K for the XY heterostructure. reflecting their excellent charge transport capabilities. Notably, the figure of merit (ZT) at 800 K was calculated to be 0.90 for the XX configuration and 1.01 for the XY configuration, underscoring the superior thermoelectric performance of the XY heterostructure. These findings contribute to a comprehensive understanding of 2D GeS/GeSe heterostructures for thermoelectric applications and provide a solid foundation for future research and technological advancements in this domain.

Synergistic Performance of Thermoelectric and Mechanical in Nanotwinned High-Entropy Semiconductors AgMnGePbSbTe5

Introducing nanotwins in thermoelectric materials represents a promising approach to achieving such a synergistic combination of thermoelectric properties and mechanical properties. By increasing configurational entropy, a sharply reduced stacking fault energy in a new nanotwinned high-entropy semiconductor AgMnGePbSbTe5 is reached. Dense coherent nanotwin boundaries in this system provide an efficient phonon scattering barrier, leading to a high figure of merit ZT of ≈2.46 at 750 K and a high average ZT of ≈1.54 (300-823 K) with the presence of Ag2Te nanoprecipitate in the sample. More importantly, owing to the dislocation pinning caused by coherent nanotwin boundaries and the chemical short-range disorder caused by the high configurational entropy effect, AgMnGePbSbTe5 also exhibits robust mechanical properties, with flexural strength of 82 MPa and Vickers hardness of 210 HV.

High-Performance AgSbTe2 Thermoelectrics: Advances, Challenges, and Perspectives

Environmental-friendless and high-performance thermoelectrics play a significant role in exploring sustainable clean energy. Among them, AgSbTe2 thermoelectrics, benefiting from the disorder in the cation sublattice and interface scattering from secondary phases of Ag2Te and Sb2Te3, exhibit low thermal conductivity and a maximum figure-of-merit ZT of 2.6 at 573 K via optimizing electrical properties and addressing phase transition issues. Therefore, AgSbTe2 shows considerable potential as a promising medium-temperature thermoelectric material. Additionally, with the increasing demands for device integration and portability in the information age, the research on flexible and wearable AgSbTe2 thermoelectrics aligns with contemporary development needs, leading to a growing number of research findings. This work provides a detailed and timely review of AgSbTe2-based thermoelectrics from materials to devices. Principles and performance optimization strategies are highlighted for the thermoelectric performance enhancement in AgSbTe2. The current challenges and future research directions of AgSbTe2-based thermoelectrics are pointed out. This review will guide the development of high-performance AgSbTe2-based thermoelectrics for practical applications.

High-Entropy Materials for Prospective Biomedical Applications: Challenges and Opportunities

With their unique structural characteristics, customizable chemical composition, and adjustable functional characteristics, high-entropy materials (HEMs) have triggered a wide range of interdisciplinary research, especially in the biomedical field. In this paper, the basic concept, core properties, and preparation methods of HEMs are first summarized, and then the application and development of HEMs in the field of biomedical are briefly described. Subsequently, based on the diverse and comprehensive properties of HEMs and a few reported cases, the possible application scenarios of HEMs in biological fields such as biosensors, antibacterial materials, therapeutics, bioimaging, and tissue engineering are prospectively predicted and discussed. Finally, their potential advantages and major challenges is summarized, which may provide useful guidance and principles for researchers to develop and optimize novel HEMs.

Interface kinetic manipulation enabling efficient and reliable Mg3Sb2 thermoelectrics

Development of efficient and reliable thermoelectric generators is vital for the sustainable utilization of energy, yet interfacial losses and failures between the thermoelectric materials and the electrodes pose a significant obstacle. Existing approaches typically rely on thermodynamic equilibrium to obtain effective interfacial barrier layers, which underestimates the critical factors of interfacial reaction and diffusion kinetics. Here, we develop a desirable barrier layer by leveraging the distinct chemical reaction activities and diffusion behaviors during sintering and operation. Titanium foil is identified as a suitable barrier layer for Mg3Sb2-based thermoelectric materials due to the creation of a highly reactive ternary MgTiSb metastable phase during sintering, which then transforms to stable binary Ti-Sb alloys during operation. Additionally, titanium foil is advantageous due to its dense structure, affordability, and ease of manufacturing. The interfacial contact resistivity reaches below 5 μΩ·cm2, resulting in a Mg3Sb2-based module efficiency of up to 11% at a temperature difference of 440 K, which exceeds that of most state-of-the-art medium-temperature thermoelectric modules. Furthermore, the robust Ti foil/Mg3(Sb,Bi)2 joints endow Mg3Sb2-based single-legs as well as modules with negligible degradation over long-term thermal cycles, thereby paving the way for efficient and sustainable waste heat recovery applications.

Boosting the Thermoelectric Properties of Ge0.94Sb0.06Te via Trojan Doping for High Output Power

GeTe stands as a promising lead-free medium-temperature thermoelectric material that has garnered considerable attention in recent years. Suppressing carrier concentration by aliovalent doping in GeTe-based thermoelectrics is the most common optimization strategy due to the intrinsically high Ge vacancy concentration. However, it inevitably results in a significant deterioration of carrier mobility, which limits further improvement of the zT value. Thus, an effective Trojan doping strategy via CuScTe2 alloying is utilized to optimize carrier concentration without intensifying charge carrier scattering by increasing the solubility of Sc in the GeTe system. Because of the high doping efficiency of the Trojan doping strategy, optimized hole concentration and high mobility are obtained. Furthermore, CuScTe2 alloying leads to band convergence in GeTe, increasing the effective mass m* in (Ge0.84Sb0.06Te0.9)(CuScTe2)0.05 and thus significantly improving the Seebeck coefficient throughout the measured temperature range. Meanwhile, the achievement of the ultralow lattice thermal conductivity (κL ∼ 0.34 W m-1 K-1) at 623 K is attributed to dense point defects with mass/strain-field fluctuations. Ultimately, the (Ge0.84Sb0.06Te0.9)(CuScTe2)0.05 sample exhibits a desirable thermoelectric performance of zTmax ∼ 1.81 at 623 K and zTave ∼ 1.01 between 300 and 723 K. This study showcases an effective doping strategy for enhancing the thermoelectric properties of GeTe-based materials by decoupling phonon and carrier scattering.

The development and impact of tin selenide on thermoelectrics

Thermoelectric technology experienced rapid development over the past 20 years, with the most promising applications being in both power generation and active cooling. Among existing thermoelectrics, tin selenide (SnSe) has had particularly rapid development owing to the unexpectedly high thermoelectric efficiency that has been continuously established over the past decade. Several transport mechanisms and strategies used to interpret and improve the thermoelectric performance of SnSe have been important for understanding and developing other material systems with SnSe-like characteristics. Similar to other thermoelectrics, building commercially viable SnSe-based devices requires advances in device efficiency and service stability. Further optimization across all material systems should enable thermoelectric technology to play a critical role in the future global energy landscape.

Achieving ZT > 1 in Cu and Ga Co-doped Ag6Ge10P12 with Superior Mechanical Performance and Its Fundamental Physical Properties toward Practical Thermoelectric Device Applications

Recently, phosphorus-based compounds have emerged as potential candidates for thermoelectric materials. One of the key challenges facing this field is to achieve ZT > 1, which is the benchmark for thermoelectric device applications. In this study, it is demonstrated that the thermoelectric performance of environmentally friendly Ag6Ge10P12 is enhanced by co-doping Cu and Ga. The mechanical properties, coefficient of linear thermal expansion, work function, and compatibility factor are comprehensively clarified to provide guidelines for reliable device applications. The peak and average dimensionless figures of merit of Ag5.85Cu0.15Ge9.875Ga0.125P12 reach 1.04 at 723 K and 0.63 at 300-723 K, respectively, which are the highest values for phosphorus-based thermoelectric materials. The Young's modulus, Vickers microhardness, fracture toughness, and compressive strength of Ag5.85Cu0.15Ge9.875Ga0.125P12 are 132 GPa, 589, 1.23 MPa m1/2, and 219 MPa, respectively, which are superior to those of typical state-of-the-art thermoelectric materials. The remarkable thermoelectric and mechanical performance of Ag5.85Cu0.15Ge9.875Ga0.125P12 mean that it is a promising candidate for medium-temperature thermoelectric conversion. Ti, V, Rh, and Pt are suitable for electrodes without exfoliation under thermal expansion and with ohmic contacts to Ag5.85Cu0.15Ge9.875Ga0.125P12 in terms of the coefficient of linear thermal expansion and work function. Considering that the compatibility factor of Ag5.85Cu0.15Ge9.875Ga0.125P12 is approximately 2.8, half-Heusler, skutterudite, and magnesium silicide-stannide compounds are suitable n-type thermoelectric counterpart materials in thermoelectric devices. These insights will lead to the development of phosphorus-based thermoelectric materials toward practical thermoelectric device applications.

High-Performance SnTe Thermoelectric Materials Enabled by the Synergy of Band Convergence and Phonon Scattering

SnTe, an environmentally friendly thermoelectric material, has garnered widespread scholarly interest owing to its lead-free nature; however, its intrinsic thermoelectric performance is constrained by a relatively low Seebeck coefficient and an extremely high lattice thermal conductivity. In this investigation, we employ the alloying of Ge and AgSbTe2 to enhance the zT value of SnTe. The study found that Ge, Ag, and Sb can effectively enhance the Seebeck coefficient and power factor of SnTe by utilizing band convergence. At the same time, a multitude of point defects induce phonon scattering, consequently decreasing the lattice thermal conductivity of SnTe. Collectively, these synergistic effects result in Sn0.75Ge0.25Te-15% AgSbTe2 achieving its highest zT value of 1.28 at 823 K, with an average zT value of 0.77 between 400 and 823 K. Such high zT values of the SnTe-based thermoelectric material provide the potential for applications in high-performance solid-state thermoelectric devices.

Enhanced Thermoelectric Performance of p-type AgSbTe2 via Cu Doping

Recently, the p-type semiconductor AgSbTe2 has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300-700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of Ag2Te impurities. Herein, we synthesized AgSb1-xCuxTe2 (x = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe2. Our results indicate that Cu doping suppresses the Ag2Te impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of Ag2Te impurities and the phonon softening of the AgSb1-xCuxTe2. Overall, Cu doping improves the ZT of AgSb1-xCuxTe2. Among all samples, AgSb0.96Cu0.04Te2 has a maximum ZT of ∼1.45 at 498 K and an average ZT of ∼1.11 from 298 to 573 K.

Boosting Thermoelectric Performance via Weakening Carrier-Phonon Coupling in BiCuSeO-Graphene Composites

BiCuSeO is a promising oxygen-containing thermoelectric material due to its intrinsically low lattice thermal conductivity and excellent service stability. However, the low electrical conductivity limits its thermoelectric performance. Aliovalent element doping can significantly improve their carrier concentration, but it may also impact carrier mobility and thermal transport properties. Considering the influence of graphene on carrier-phonon decoupling, Bi0.88Pb0.06Ca0.06CuSeO (BPCCSO)-graphene composites are designed. For further practical application, a rapid preparation method is employed, taking less than 1 h, which combines self-propagating high-temperature synthesis with spark plasma sintering. The incorporation of graphene simultaneously optimizes the electrical properties and thermal conductivity, yielding a high ratio of weighted mobility to lattice thermal conductivity (144 at 300 K and 95 at 923 K). Ultimately, BPCCSO-graphene composites achieve exceptional thermoelectric performance with a ZT value of 1.6 at 923 K, bringing a ≈40% improvement over BPCCSO without graphene. This work further promotes the practical application of BiCuSeO-based materials and this facile and effective strategy can also be extended to other thermoelectric systems.

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Metavalent bonding is a unique bonding mechanism responsible for exceptional properties of materials used in thermoelectric, phase-change, and optoelectronic devices. For thermoelectrics, the desired performance of metavalently bonded materials can be tuned by doping foreign atoms. Incorporating dopants to form solid solutions or second phases is a crucial route to tailor the charge and phonon transport. Yet, it is difficult to predict if dopants will form a secondary phase or a solid solution, which hinders the tailoring of microstructures and material properties. Here, we propose that the solid solution is more easily formed between metavalently bonded solids, while precipitates prefer to exist in systems mixed by metavalently bonded and other bonding mechanisms. We demonstrate this in a metavalently bonded GeTe compound alloyed with different sulfides. We find that S can dissolve in the GeTe matrix when alloyed with metavalently bonded PbS. In contrast, S-rich second phases are omnipresent via alloying with covalently bonded GeS and SnS. Benefiting from the reduced phonon propagation and the optimized electrical transport properties upon doping PbS in GeTe, a high figure-of-merit ZT of 2.2 at 773 K in (Ge0.84Sb0.06Te0.9)(PbSe)0.05(PbS)0.05 is realized. This strategy can be applied to other metavalently bonded materials to design properties beyond thermoelectrics.

Enhanced High-Temperature Thermoelectric Performance in Te-Doped Electronegative Element-Filled Skutterudites via Suppressing Bipolar Effects and Enhanced Phonon Scattering

CoSb3-based skutterudites have great potential as midtemperature thermoelectric (TE) materials due to their low cost and excellent electrical and mechanical properties. Their application, however, is limited by the high thermal conductivity and the degradation of TE performance at elevated temperatures, attributed to the adverse effects of bipolar diffusion. Herein, a series of SeyCo4Sb12-xTex compounds were successfully synthesized by combining a solid-state reaction and spark plasma sintering techniques to mitigate these challenges. It was found that doping Te at the Sb sites effectively enhanced the carrier concentration and suppressed the bipolar effect to obtain a superior power factor of ∼43 μW cm-1 K-2. Furthermore, due to the low resonant frequency of Se, filling voids of CoSb3 with Se achieved a low lattice thermal conductivity of 1.55 W m-1 K-1. Nevertheless, Se filling introduced additional holes, reducing the carrier concentration without a significant detriment of the carrier mobility. As a result, a maximum figure of merit of 1.23 was achieved for Se0.1Co4Sb11.55Te0.45 at 773 K. This work provides a valuable guidance for selecting appropriate filling and doping components to achieve synergistic optimization of the acoustics and electronics of CoSb3-based skutterudites.

Advancing flexible thermoelectrics for integrated electronics

With the increasing demand for energy and the climate challenges caused by the consumption of traditional fuels, there is an urgent need to accelerate the adoption of green and sustainable energy conversion and storage technologies. The integration of flexible thermoelectrics with other various energy conversion technologies plays a crucial role, enabling the conversion of multiple forms of energy such as temperature differentials, solar energy, mechanical force, and humidity into electricity. The development of these technologies lays the foundation for sustainable power solutions and promotes research progress in energy conversion. Given the complexity and rapid development of this field, this review provides a detailed overview of the progress of multifunctional integrated energy conversion and storage technologies based on thermoelectric conversion. The focus is on improving material performance, optimizing the design of integrated device structures, and achieving device flexibility to expand their application scenarios, particularly the integration and multi-functionalization of wearable energy conversion technologies. Additionally, we discuss the current development bottlenecks and future directions to facilitate the continuous advancement of this field.

Nanostructured Ferecrystal Intergrowths with TaSe2 Unveiled High Thermoelectric Performance in n-Type SnSe

Ferecrystals, a distinctive class of misfit layered compounds, hold significant promise in manipulating the phonon transport owing to their two-dimensional (2D) natural superlattice-type structure and turbostratic (rotational) disorder present between the constituent layers. Integrating these 2D intergrowth structures as nanodomains embedded in a bulk thermoelectric matrix is a formidable challenge in synthetic chemistry, yet offers groundbreaking opportunities for efficient thermoelectrics. Here, we have achieved an exceptionally high thermoelectric figure of merit, zT ∼ 2.2, at 823 K in n-type Ta and Br-codoped SnSe, by successfully incorporating [(SnSe)1.15]7(TaSe2)1 ferecrystals with [110] SnSe//[100] TaSe2 orientation, as nanostructures with modulations in few nm in bulk SnSe solid-state matrix. While the presence of ferecrystal nanostructures induces strong scattering of heat-carrying phonons resulting in an ultralow lattice thermal conductivity (κL) of ∼0.18 W m-1 K-1 at 773 K, the Ta and Br codoping strategy increases the concentration of n-type charge carriers for enhanced electrical conductivity. Our approach provides a new pathway for damping the phonon transport and enhancing the thermoelectric performance in 2D layered materials.

Lattice Softening and Band Convergence in GeTe-Based Alloys for High Thermoelectric Performance

GeTe-based alloys have been studied as promising TE materials in the midtemperature range as a lead-free alternate to PbTe due to their nontoxicity. Our previous study on GeTe1-xIx revealed that I-doping increases lattice anharmonicity and decreases the structural phase transition temperature, consequently enhancing the thermoelectric performance. Our current work elucidates the synergistic interplay between band convergence and lattice softening, resulting in an enhanced thermoelectric performance for Ge1-ySbyTe0.9I0.1 (y = 0.10, 0.12, 0.14, and 0.16). Sb doping in GeTe0.9I0.1 serves a double role: first, it leads to lattice softening, thereby reducing lattice thermal conductivity; second, it promotes a band convergence, thus a higher valley degeneracy. The presence of lattice softening is corroborated by an increase in the internal strain ratio observed in X-ray diffraction patterns. Doping also introduces phonon scattering centers, further diminishing lattice thermal conductivity. Additionally, variations in the electronic band structure are indicated by an increase in density of state effective mass and a decrease in carrier mobility with Sb concentration. Besides, Sb doping optimizes the carrier concentration efficiently. Through a two-band modeling and electronic band structure calculations, the valence band convergence due to Sb doping can be confirmed. Specifically, the energy difference between valence bands progressively narrows upon Sb doping in Ge1-ySbyTe0.9I0.1 (y = 0, 0.02, 0.05, 0.10, 0.12, 0.14, and 0.16). As a culmination of these effects, we have achieved a significant enhancement in zT for Ge1-ySbyTe0.9I0.1 (y = 0.10, 0.12, 0.14, and 0.16) across the entire range of measured temperatures. Notably, the sample with y = 0.12 exhibits the highest zT value of 1.70 at 723 K.

Improving the Long-Term Stability of PbTe-Based Thermoelectric Modules: From Nanostructures to Packaged Module Architecture

Nanostructured lead telluride PbTe is among the best-performing thermoelectric materials, for both p- and n-types, for intermediate temperature applications. However, the fabrication of power-generating modules based on nanostructured PbTe still faces challenges related to the stability of the materials, especially nanoprecipitates, and the bonding of electric contacts. In this study, in situ high-temperature transmission electron microscopy observation confirmed the stability of nanoprecipitates in p-type Pb0.973Na0.02Ge0.007Te up to at least ∼786 K. Then, a new architecture for a packaged module was developed for improving durability, preventing unwanted interaction between thermoelectric materials and electrodes, and for reducing thermal stress-induced crack formation. Finite element method simulations of thermal stresses and power generation characteristics were utilized to optimize the new module architecture. Legs of nanostructured p-type Pb0.973Na0.02Ge0.007Te (maximum zT ∼ 2.2 at 795 K) and nanostructured n-type Pb0.98Ga0.02Te (maximum zT ∼ 1.5 at 748 K) were stacked with flexible Fe-foil diffusion barrier layers and Ag-foil-interconnecting electrodes forming stable interfaces between electrodes and PbTe in the packaged module. For the bare module, a maximum conversion efficiency of ∼6.8% was obtained for a temperature difference of ∼480 K. Only ∼3% reduction in output power and efficiency was found after long-term operation of the bare module for ∼740 h (∼31 days) at a hot-side temperature of ∼673 K, demonstrating good long-term stability.

Carrier-phonon decoupling in perovskite thermoelectrics via entropy engineering

Thermoelectrics converting heat and electricity directly attract broad attentions. To enhance the thermoelectric figure of merit, zT, one of the key points is to decouple the carrier-phonon transport. Here, we propose an entropy engineering strategy to realize the carrier-phonon decoupling in the typical SrTiO3-based perovskite thermoelectrics. By high-entropy design, the lattice thermal conductivity could be reduced nearly to the amorphous limit, 1.25 W m-1 K-1. Simultaneously, entropy engineering can tune the Ti displacement, improving the weighted mobility to 65 cm2 V-1 s-1. Such carrier-phonon decoupling behaviors enable the greatly enhanced μW/κL of ~5.2 × 103 cm3 K J-1 V-1. The measured maximum zT of 0.24 at 488 K and the estimated zT of ~0.8 at 1173 K in (Sr0.2Ba0.2Ca0.2Pb0.2La0.2)TiO3 film are among the best of n-type thermoelectric oxides. These results reveal that the entropy engineering may be a promising strategy to decouple the carrier-phonon transport and achieve higher zT in thermoelectrics.

Half-metallization Atom-Fingerprints Achieved at Ultrafast Oxygen-Evaporated Pyrochlores for Acidic Water Oxidation

The stability and catalytic activity of acidic oxygen evolution reaction (OER) are strongly determined by the coordination states and spatial symmetry among metal sites at catalysts. Herein, an ultrafast oxygen evaporation technology to rapidly soften the intrinsic covalent bonds using ultrahigh electrical pulses is suggested, in which prospective charged excited states at this extreme avalanche condition can generate a strong electron-phonon coupling to rapidly evaporate some coordinated oxygen (O) atoms, finally leading to a controllable half-metallization feature. Simultaneously, the relative metal (M) site arrays can be orderly locked to delineate some intriguing atom-fingerprints at pyrochlore catalysts, where the coexistence of metallic bonds (M─M) and covalent bonds (M─O) at this symmetry-breaking configuration can partially restrain crystal field effect to generate a particular high-spin occupied state. This half-metallization catalyst can effectively optimize the spin-related reaction kinetics in acidic OER, giving rise to 10.3 times (at 188 mV overpotential) reactive activity than pristine pyrochlores. This work provides a new understanding of half-metallization atom-fingerprints at catalyst surfaces to accelerate acidic water oxidation.

High-performance Mg3Sb2-based thermoelectrics with reduced structural disorder and microstructure evolution

Mg3Sb2-based thermoelectrics show great promise for next-generation thermoelectric power generators and coolers owing to their excellent figure of merit (zT) and earth-abundant composition elements. However, the complexity of the defect microstructure hinders the advancement of high performance. Here, the defect microstructure is modified via In doping and prolonged sintering time to realize the reduced structural disorder and microstructural evolution, synergistically optimizing electron and phonon transport via a delocalization effect. As a result, an excellent carrier mobility of ~174 cm2 V-1 s-1 and an ultralowκ l a t of ~0.42 W m-1 K-1 are realized in this system, leading to an ultrahigh zT of ~2.0 at 723 K. The corresponding single-leg module demonstrates a high conversion efficiency of ~12.6% with a 425 K temperature difference, and the two-pair module of Mg3Sb2/MgAgSb displays ~7.1% conversion efficiency with a 276 K temperature difference. This work paves a pathway to improve the thermoelectric performance of Mg3Sb2-based materials, and represents a significant step forward for the practical application of Mg3Sb2-based devices.

Approaching crystal's limit of thermoelectrics by nano-sintering-aid at grain boundaries

Grain boundary plays a vital role in thermoelectric transports, leading to distinct properties between single crystals and polycrystals. Manipulating the grain boundary to realize good thermoelectric properties in polycrystals similar as those of single crystals is a long-standing task, but it is quite challenging. Herein, we develop a liquid-phase sintering strategy to successfully introduce Mg2Cu nano-sintering-aid into the grain boundaries of Mg3(Bi, Sb)2-based materials. The nano-aid helps to enlarge the average grain size to 23.7 μm and effectively scatter phonons, leading to excellent electrical transports similar as those of single crystals and ultralow lattice thermal conductivity as well as exceptional thermoelectric figure of merit (1.5 at 500 K) and conversion efficiency (7.4% under temperature difference of 207 K). This work provides a simple but effective strategy for the fabrication of high-performance polycrystals for large-scale applications.

Multi-heterojunctioned plastics with high thermoelectric figure of merit

Conjugated polymers promise inherently flexible and low-cost thermoelectrics for powering the Internet of Things from waste heat1,2. Their valuable applications, however, have been hitherto hindered by the low dimensionless figure of merit (ZT)3-6. Here we report high-ZT thermoelectric plastics, which were achieved by creating a polymeric multi-heterojunction with periodic dual-heterojunction features, where each period is composed of two polymers with a sub-ten-nanometre layered heterojunction structure and an interpenetrating bulk-heterojunction interface. This geometry produces significantly enhanced interfacial phonon-like scattering while maintaining efficient charge transport. We observed a significant suppression of thermal conductivity by over 60 per cent and an enhanced power factor when compared with individual polymers, resulting in a ZT of up to 1.28 at 368 kelvin. This polymeric thermoelectric performance surpasses that of commercial thermoelectric materials and existing flexible thermoelectric candidates. Importantly, we demonstrated the compatibility of the polymeric multi-heterojunction structure with solution coating techniques for satisfying the demand for large-area plastic thermoelectrics, which paves the way for polymeric multi-heterojunctions towards cost-effective wearable thermoelectric technologies.

Realization of Fine-Tuning the Lattice Thermal Conductivity and Anharmonicity in Layered Semiconductors via Entropy Engineering

Entropy engineering is widely proven to be effective in achieving ultra-low thermal conductivity for well-performed thermoelectric and heat management applications. However, no strong correlation between entropy and lattice thermal conductivity is found until now, and the fine-tuning of thermal conductivity continuously via entropy-engineering in a wide entropy range is still lacking. Here, a series of high-entropy layered semiconductors, Ni1- x(Fe0.25Co0.25Mn0.25Zn0.25)xPS3, where 0 ≤ x < 1, with low mass/size disorder is designed. High-purity samples with mixing configuration entropy of metal atomic site in a wide range of 0-1.61R are achieved. Umklapp phonon-phonon scattering is found to be the dominating phonon scattering mechanism, as revealed by the linear T-1 dependence of thermal conductivity. Meanwhile, fine tuning of the lattice thermal conductivity via continuous entropy engineering at metal atomic sites is achieved, in an almost linear dependence in middle-/high- entropy range. Moreover, the slope of the κ - T-1 curve reduces with the increase in entropy, and a linear response of the reduced Grüneisen parameter is revealed. This work provides an entropy engineering strategy by choosing multiple metal elements with low mass/size disorder to achieve the fine tuning of the lattice thermal conductivity and the anharmonic effect.

Exceptional figure of merit achieved in boron-dispersed GeTe-based thermoelectric composites

GeTe is a promising p-type material with increasingly enhanced thermoelectric properties reported in recent years, demonstrating its superiority for mid-temperature applications. In this work, the thermoelectric performance of GeTe is improved by a facile composite approach. We find that incorporating a small amount of boron particles into the Bi-doped GeTe leads to significant enhancement in power factor and simultaneous reduction in thermal conductivity, through which the synergistic modulation of electrical and thermal transport properties is realized. The thermal mismatch between the boron particles and the matrix induces high-density dislocations that effectively scatter the mid-frequency phonons, accounting for a minimum lattice thermal conductivity of 0.43 Wm-1K-1 at 613 K. Furthermore, the presence of boron/GeTe interfaces modifies the interfacial potential barriers, resulting in increased Seebeck coefficient and hence enhanced power factor (25.4 μWcm-1K-2 at 300 K). Consequently, we obtain a maximum figure of merit Zmax of 4.0 × 10-3 K-1 at 613 K in the GeTe-based composites, which is the record-high value in GeTe-based thermoelectric materials and also superior to most of thermoelectric systems for mid-temperature applications. This work provides an effective way to further enhance the performance of GeTe-based thermoelectrics.

Realizing a Superior Conversion Efficiency of ≈11.3% in the Group IV-VI Thermoelectric Module

GeTe-based materials exhibit superior thermoelectric performance, while the development of power generation devices has mainly been limited by the challenge of designing the interface due to the phase transition in GeTe. In this work, via utilizing the low-temperature nano-Ag sintering technique and screening suitable Ti-Al alloys, a reliable interface with excellent connection performance has been realized. The Ti-Al intermetallic compounds effectively inhibit the diffusion process at Ti-34Al/Ge0.9Sb0.1Te interface. Thus, the thickness of the interfacial reaction layer only increases by ≈2.08 µm, and the interfacial electrical contact resistivity remains as low as ≈15.2 µΩ cm2 even after 30 days of isothermal aging at 773 K. A high conversion efficiency of ≈11.3% has been achieved in the GeTe/PbTe module at a hot-side temperature of 773 K and a cold-side temperature of 300 K. More importantly, the module's performance and the reliability of the interface remain consistently stable throughout 50 thermal cycles and long-term aging. This work promotes the application of high-performance GeTe materials for thermoelectric power generation.

Tailoring local chemical fluctuation of high-entropy structures in thermoelectric materials

In high-entropy materials, local chemical fluctuation from multiple elements inhabiting the same crystallographic site plays a crucial role in their unique properties. Using atomic-resolution chemical mapping, we identified the respective contributions of different element characteristics on the local chemical fluctuation of high-entropy structures in thermoelectric materials. Electronegativity and mass had a comparable influence on the fluctuations of constituent elements, while the radius made a slight contribution. The local chemical fluctuation was further tailored by selecting specific elements to induce large lattice distortion and strong strain fluctuation to lower lattice thermal conductivity independent of increased entropy. The chemical bond fluctuation induced by the electronegativity difference had a noticeable contribution to the composition-dependent lattice thermal conductivity in addition to the known fluctuations of mass and strain field. Our findings provide a fundamental principle for tuning local chemical fluctuation and lattice thermal conductivity in high-entropy thermoelectric materials.

Screening Weldable Metal Electrodes for Ag2Se Thermoelectric Devices below 300 °C

Thermoelectricity has been considered as the most important solution of generating electricity, particularly from low-grade heat below 300 °C. Despite efforts in recent years on exploring alternative materials to only commercialized Bi2Te3, the practical implementation of these new materials has been hindered by inadequate investigation into device design. Given that the utilization of weldable electrodes offers advantages in technical compatibility for a large-scale assembly of thermoelectric elements into modules, a thorough investigation into the potential of weldable metal electrodes at T < 300 °C is imperative. In this work, the diffusion of 11 kinds of thermoelectric materials in common weldable metals (Ni, Fe, Cu, and Ag) was screened. Ag is sorted out as a promising weldable electrode that can directly bond to thermoelectric Ag2Se in this temperature range, leading to a minimization of an interfacial contact resistivity down to 11 μΩ cm2 in a design of the Ag/Ag2Se/Ag structure. The conversion efficiency of ∼3% at ΔT of 95 K with an excellent stability indicates Ag2Se as a top alternative to n-type Bi2Te3 for low-grade heat recovery.