Impact of valley degeneracy on the thermoelectric properties of zig-zag graphene nanoribbons with staggered sublattice potentials and transverse electric fields

This study investigates the band inversion of flat bands in zig-zag graphene nanoribbons (ZGNRs) using a tight-binding model. The band inversion results from symmetry breaking in the transverse direction, achievable through deposition on specific substrates such as separated silicon carbide or hexagonal boron nitride sheets. Upon band inversion, ZGNRs exhibit electronic structures characterized by valley degeneracy and band gap properties, which can be modulated by transverse electric fields. To explore the impact of this level degeneracy on thermoelectric properties, we employ Green's function techniques to calculate thermoelectric quantities in ZGNR segments with staggered sublattice potentials and transverse electric fields. Two carrier transport scenarios are considered: the chemical potential is positioned above and below the highest occupied molecular orbital. We analyze thermionic-assisted transport (TAT) and direct ballistic transport (DBT). Level degeneracy enhances the electric power factors of ZGNRs by increasing electrical conductance, while the Seebeck coefficient remains robust in the TAT scenario. Conversely, in DBT, the enhancement of the power factor primarily stems from improvements in the Seebeck coefficient at elevated temperatures.

High-Entropy Magnet Enabling Distinctive Thermal Expansions in Intermetallic Compounds

The high-entropy strategy has gained increasing popularity in the design of functional materials due to its four core effects. In this study, we introduce the concept of a "high-entropy magnet (HEM)", which integrates diverse magnetic compounds within a single phase and is anticipated to demonstrate unique magnetism-related properties beyond that of its individual components. This concept is exemplified in AB2-type layered Kagome intermetallic compounds (Ti,Zr,Hf,Nb,Fe)Fe2. It is revealed that the competition among individual magnetic states and the presence of magnetic Fe in originally nonmagnetic high-entropy sites lead to intricate magnetic transitions with temperature. Consequently, unusual transformations in thermal expansion property (from positive to zero, negative, and back to near zero) are observed. Specifically, a near-zero thermal expansion is achieved over a wide temperature range (10-360 K, αv = -0.62 × 10-6 K-1) in the A-site equal-atomic ratio (Ti1/5Zr1/5Hf1/5Nb1/5Fe1/5)Fe2 compound, which is associated with successive deflection of average Fe moments. The HEM strategy holds promise for discovering new functionalities in solid materials.

Defect Engineering Advances Thermoelectric Materials

Defect engineering is an effective method for tuning the performance of thermoelectric materials and shows significant promise in advancing thermoelectric performance. Given the rapid progress in this research field, this Review summarizes recent advances in the application of defect engineering in thermoelectric materials, offering insights into how defect engineering can enhance thermoelectric performance. By manipulating the micro/nanostructure and chemical composition to introduce defects at various scales, the physical impacts of diverse types of defects on band structure, carrier and phonon transport behaviors, and the improvement of mechanical stability are comprehensively discussed. These findings provide more reliable and efficient solutions for practical applications of thermoelectric materials. Additionally, the development of relevant defect characterization techniques and theoretical models are explored to help identify the optimal types and densities of defects for a given thermoelectric material. Finally, the challenges faced in the conversion efficiency and stability of thermoelectric materials are highlighted and a look ahead to the prospects of defect engineering strategies in this field is presented.

Thermoelectric properties of XX- and XY-stacked GeS/GeSe van der Waals heterostructures from DFT and BTP calculations

This study utilizes density functional theory (DFT) and the Boltzmann transport equation (BTE) to investigate the structural, electronic, and thermoelectric properties of germanium sulfide (GeS) and germanium selenide (GeSe) monolayers, along with their van der Waals (vdW) heterostructures. We analyzed XX-stacked and XY-stacked configurations, where the XX configuration features direct atomic stacking, while the XY configuration exhibits staggered stacking. Our first-principles calculations indicate that the formation of GeS/GeSe heterostructures results in a reduction of bandgaps compared to their bulk and monolayer counterparts, yielding bandgap values of 0.91 eV for the XX configuration and 0.84 eV for the XY configuration. Stability assessments reveal that the XY configuration is more stable, demonstrating a lattice thermal conductivity of 15.21 W/mK compared to 17.95 W/mK for the XX configuration T 300 K. The thermoelectric properties were systematically evaluated across a temperature range of 300-800 K, revealing high Seebeck coefficients of 1.51 mV/K for the XX heterostructure and 1.39 mV/K for the XY heterostructure. reflecting their excellent charge transport capabilities. Notably, the figure of merit (ZT) at 800 K was calculated to be 0.90 for the XX configuration and 1.01 for the XY configuration, underscoring the superior thermoelectric performance of the XY heterostructure. These findings contribute to a comprehensive understanding of 2D GeS/GeSe heterostructures for thermoelectric applications and provide a solid foundation for future research and technological advancements in this domain.

Synergistic Suppression of Bipolar Effect and Lattice Thermal Conductivity Leading to High Average Figure of Merit in Bi0.4Sb1.6Te3 Materials through Alloying with AgSbTe2

Bismuth telluride-based materials have been widely used in commercial thermoelectric applications due to their excellent thermoelectric performance in the near-room-temperature range, yet further improvement of their thermoelectric properties is still necessary. Moreover, the narrow band gap of these materials results in a bipolar effect at elevated temperatures, which causes severe degradation of the thermoelectric performance. In this work, the commercial Bi0.4Sb1.6Te3 was alloyed with AgSbTe2 by using high-energy ball milling method combined with spark plasma sintering. It was found that ball milling can effectively reduce the lattice thermal conductivity of the samples. The alloying of AgSbTe2 leads to a gradual increase in hole carrier concentration, resulting in an enhanced electrical conductivity and optimized power factor. Additionally, the bipolar effect is also weakened due to the increased hole carrier concentration. Furthermore, the substitution of Ag in the Bi/Sb sublattice causes further reduction in the lattice thermal conductivity. Ultimately, the sample alloyed with 0.15 wt % AgSbTe2 demonstrates its best thermoelectric performance with a maximum zT of 1.35 at 393 K, showing a 20.5% improvement compared to the commercial sample. Besides, its average zT reaches a high value of 1.25 between 303 and 483 K, with a 27.6% improvement compared to that of the commercial sample.

Synergistic Performance of Thermoelectric and Mechanical in Nanotwinned High-Entropy Semiconductors AgMnGePbSbTe5

Introducing nanotwins in thermoelectric materials represents a promising approach to achieving such a synergistic combination of thermoelectric properties and mechanical properties. By increasing configurational entropy, a sharply reduced stacking fault energy in a new nanotwinned high-entropy semiconductor AgMnGePbSbTe5 is reached. Dense coherent nanotwin boundaries in this system provide an efficient phonon scattering barrier, leading to a high figure of merit ZT of ≈2.46 at 750 K and a high average ZT of ≈1.54 (300-823 K) with the presence of Ag2Te nanoprecipitate in the sample. More importantly, owing to the dislocation pinning caused by coherent nanotwin boundaries and the chemical short-range disorder caused by the high configurational entropy effect, AgMnGePbSbTe5 also exhibits robust mechanical properties, with flexural strength of 82 MPa and Vickers hardness of 210 HV.

High-Performance AgSbTe2 Thermoelectrics: Advances, Challenges, and Perspectives

Environmental-friendless and high-performance thermoelectrics play a significant role in exploring sustainable clean energy. Among them, AgSbTe2 thermoelectrics, benefiting from the disorder in the cation sublattice and interface scattering from secondary phases of Ag2Te and Sb2Te3, exhibit low thermal conductivity and a maximum figure-of-merit ZT of 2.6 at 573 K via optimizing electrical properties and addressing phase transition issues. Therefore, AgSbTe2 shows considerable potential as a promising medium-temperature thermoelectric material. Additionally, with the increasing demands for device integration and portability in the information age, the research on flexible and wearable AgSbTe2 thermoelectrics aligns with contemporary development needs, leading to a growing number of research findings. This work provides a detailed and timely review of AgSbTe2-based thermoelectrics from materials to devices. Principles and performance optimization strategies are highlighted for the thermoelectric performance enhancement in AgSbTe2. The current challenges and future research directions of AgSbTe2-based thermoelectrics are pointed out. This review will guide the development of high-performance AgSbTe2-based thermoelectrics for practical applications.

Enhancing the Thermoelectric Performance of n-Type Mg3.2Sb1.5Bi0.5 by Reducing Lattice Thermal Conductivity through the Incorporation of Chlorine-Containing Compounds

Mg3Sb2-based thermoelectric materials are characterized by their economic efficiency, nontoxicity, and environmental friendliness and represent a highly promising and eco-friendly functional material for midtemperature applications. To achieve a higher thermoelectric performance, we introduced two compounds, LaCl3 and CeCl3, into Mg3.2Sb1.5Bi0.5 under the guidance of first-principles calculations. The Mg3.2Sb1.5Bi0.5 + 0.03CeCl3 sample reached a maximum ZT value of approximately 1.6 at 723 K. The calculations indicate that two n-type dopants, LaCl3 and CeCl3, can adequately improve the band structure of Mg3Sb2, and the introduction of Cl atoms will also lead to lattice distortion and reduce the lattice thermal conductivity (κL). Experimental results demonstrate that the introduction of Cl atoms efficiently reduces the thermal conductivity while improving the electrical transport properties. Specifically, the Mg3.2Sb1.5Bi0.5 + 0.03CeCl3 sample achieved an exceptionally low κL of 0.3 W m-1 K-1 at 723 K, thereby validating the effectiveness of LaCl3 and CeCl3 doping. This work provides valuable insights into achieving thermoelectric decoupling in Mg3Sb2-based thermoelectric materials.

Interface kinetic manipulation enabling efficient and reliable Mg3Sb2 thermoelectrics

Development of efficient and reliable thermoelectric generators is vital for the sustainable utilization of energy, yet interfacial losses and failures between the thermoelectric materials and the electrodes pose a significant obstacle. Existing approaches typically rely on thermodynamic equilibrium to obtain effective interfacial barrier layers, which underestimates the critical factors of interfacial reaction and diffusion kinetics. Here, we develop a desirable barrier layer by leveraging the distinct chemical reaction activities and diffusion behaviors during sintering and operation. Titanium foil is identified as a suitable barrier layer for Mg3Sb2-based thermoelectric materials due to the creation of a highly reactive ternary MgTiSb metastable phase during sintering, which then transforms to stable binary Ti-Sb alloys during operation. Additionally, titanium foil is advantageous due to its dense structure, affordability, and ease of manufacturing. The interfacial contact resistivity reaches below 5 μΩ·cm2, resulting in a Mg3Sb2-based module efficiency of up to 11% at a temperature difference of 440 K, which exceeds that of most state-of-the-art medium-temperature thermoelectric modules. Furthermore, the robust Ti foil/Mg3(Sb,Bi)2 joints endow Mg3Sb2-based single-legs as well as modules with negligible degradation over long-term thermal cycles, thereby paving the way for efficient and sustainable waste heat recovery applications.

Decoupled electron-phonon transport in Ag2Se thermoelectric materials through constructing TiO2/MoS2 co-decorated cell-membrane-mimic grain boundaries

Ag2Se has emerged as a promising n-type thermoelectric material; however, its application is limited mainly due to the strongly coupled charge carrier and phonon transport. Enhancing phonon scattering by constructing interfacial complexes often results in low carrier mobility due to its strong carrier scattering resulting from the high energy barrier at the multiphase interface. Inspired by the cell membrane with selective permeability, we construct bio-mimic grain boundaries with TiO2 and MoS2 co-decoration in Ag2Se to decouple electron scattering from strong phonon scattering. The nanostructured TiO2 with a high dielectric constant screens the interfacial Coulomb potential, ensuring efficient carrier transport and reducing the grain boundary barriers, while the few-layer MoS2 provides significant phonon scattering to further reduce the thermal conductivity. This method effectively enhances the zT value of Ag2Se by as much as 60% and also can significantly enhance the theoretical output performance of the thermoelectric device, which highlights the effectiveness of the bio-mimic grain boundary engineering strategy.

Boosting the Thermoelectric Properties of Ge0.94Sb0.06Te via Trojan Doping for High Output Power

GeTe stands as a promising lead-free medium-temperature thermoelectric material that has garnered considerable attention in recent years. Suppressing carrier concentration by aliovalent doping in GeTe-based thermoelectrics is the most common optimization strategy due to the intrinsically high Ge vacancy concentration. However, it inevitably results in a significant deterioration of carrier mobility, which limits further improvement of the zT value. Thus, an effective Trojan doping strategy via CuScTe2 alloying is utilized to optimize carrier concentration without intensifying charge carrier scattering by increasing the solubility of Sc in the GeTe system. Because of the high doping efficiency of the Trojan doping strategy, optimized hole concentration and high mobility are obtained. Furthermore, CuScTe2 alloying leads to band convergence in GeTe, increasing the effective mass m* in (Ge0.84Sb0.06Te0.9)(CuScTe2)0.05 and thus significantly improving the Seebeck coefficient throughout the measured temperature range. Meanwhile, the achievement of the ultralow lattice thermal conductivity (κL ∼ 0.34 W m-1 K-1) at 623 K is attributed to dense point defects with mass/strain-field fluctuations. Ultimately, the (Ge0.84Sb0.06Te0.9)(CuScTe2)0.05 sample exhibits a desirable thermoelectric performance of zTmax ∼ 1.81 at 623 K and zTave ∼ 1.01 between 300 and 723 K. This study showcases an effective doping strategy for enhancing the thermoelectric properties of GeTe-based materials by decoupling phonon and carrier scattering.

The development and impact of tin selenide on thermoelectrics

Thermoelectric technology experienced rapid development over the past 20 years, with the most promising applications being in both power generation and active cooling. Among existing thermoelectrics, tin selenide (SnSe) has had particularly rapid development owing to the unexpectedly high thermoelectric efficiency that has been continuously established over the past decade. Several transport mechanisms and strategies used to interpret and improve the thermoelectric performance of SnSe have been important for understanding and developing other material systems with SnSe-like characteristics. Similar to other thermoelectrics, building commercially viable SnSe-based devices requires advances in device efficiency and service stability. Further optimization across all material systems should enable thermoelectric technology to play a critical role in the future global energy landscape.

Achieving ZT > 1 in Cu and Ga Co-doped Ag6Ge10P12 with Superior Mechanical Performance and Its Fundamental Physical Properties toward Practical Thermoelectric Device Applications

Recently, phosphorus-based compounds have emerged as potential candidates for thermoelectric materials. One of the key challenges facing this field is to achieve ZT > 1, which is the benchmark for thermoelectric device applications. In this study, it is demonstrated that the thermoelectric performance of environmentally friendly Ag6Ge10P12 is enhanced by co-doping Cu and Ga. The mechanical properties, coefficient of linear thermal expansion, work function, and compatibility factor are comprehensively clarified to provide guidelines for reliable device applications. The peak and average dimensionless figures of merit of Ag5.85Cu0.15Ge9.875Ga0.125P12 reach 1.04 at 723 K and 0.63 at 300-723 K, respectively, which are the highest values for phosphorus-based thermoelectric materials. The Young's modulus, Vickers microhardness, fracture toughness, and compressive strength of Ag5.85Cu0.15Ge9.875Ga0.125P12 are 132 GPa, 589, 1.23 MPa m1/2, and 219 MPa, respectively, which are superior to those of typical state-of-the-art thermoelectric materials. The remarkable thermoelectric and mechanical performance of Ag5.85Cu0.15Ge9.875Ga0.125P12 mean that it is a promising candidate for medium-temperature thermoelectric conversion. Ti, V, Rh, and Pt are suitable for electrodes without exfoliation under thermal expansion and with ohmic contacts to Ag5.85Cu0.15Ge9.875Ga0.125P12 in terms of the coefficient of linear thermal expansion and work function. Considering that the compatibility factor of Ag5.85Cu0.15Ge9.875Ga0.125P12 is approximately 2.8, half-Heusler, skutterudite, and magnesium silicide-stannide compounds are suitable n-type thermoelectric counterpart materials in thermoelectric devices. These insights will lead to the development of phosphorus-based thermoelectric materials toward practical thermoelectric device applications.

High-Performance SnTe Thermoelectric Materials Enabled by the Synergy of Band Convergence and Phonon Scattering

SnTe, an environmentally friendly thermoelectric material, has garnered widespread scholarly interest owing to its lead-free nature; however, its intrinsic thermoelectric performance is constrained by a relatively low Seebeck coefficient and an extremely high lattice thermal conductivity. In this investigation, we employ the alloying of Ge and AgSbTe2 to enhance the zT value of SnTe. The study found that Ge, Ag, and Sb can effectively enhance the Seebeck coefficient and power factor of SnTe by utilizing band convergence. At the same time, a multitude of point defects induce phonon scattering, consequently decreasing the lattice thermal conductivity of SnTe. Collectively, these synergistic effects result in Sn0.75Ge0.25Te-15% AgSbTe2 achieving its highest zT value of 1.28 at 823 K, with an average zT value of 0.77 between 400 and 823 K. Such high zT values of the SnTe-based thermoelectric material provide the potential for applications in high-performance solid-state thermoelectric devices.

Enhanced Thermoelectric Performance of p-type AgSbTe2 via Cu Doping

Recently, the p-type semiconductor AgSbTe2 has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300-700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of Ag2Te impurities. Herein, we synthesized AgSb1-xCuxTe2 (x = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe2. Our results indicate that Cu doping suppresses the Ag2Te impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of Ag2Te impurities and the phonon softening of the AgSb1-xCuxTe2. Overall, Cu doping improves the ZT of AgSb1-xCuxTe2. Among all samples, AgSb0.96Cu0.04Te2 has a maximum ZT of ∼1.45 at 498 K and an average ZT of ∼1.11 from 298 to 573 K.

Boosting Thermoelectric Performance via Weakening Carrier-Phonon Coupling in BiCuSeO-Graphene Composites

BiCuSeO is a promising oxygen-containing thermoelectric material due to its intrinsically low lattice thermal conductivity and excellent service stability. However, the low electrical conductivity limits its thermoelectric performance. Aliovalent element doping can significantly improve their carrier concentration, but it may also impact carrier mobility and thermal transport properties. Considering the influence of graphene on carrier-phonon decoupling, Bi0.88Pb0.06Ca0.06CuSeO (BPCCSO)-graphene composites are designed. For further practical application, a rapid preparation method is employed, taking less than 1 h, which combines self-propagating high-temperature synthesis with spark plasma sintering. The incorporation of graphene simultaneously optimizes the electrical properties and thermal conductivity, yielding a high ratio of weighted mobility to lattice thermal conductivity (144 at 300 K and 95 at 923 K). Ultimately, BPCCSO-graphene composites achieve exceptional thermoelectric performance with a ZT value of 1.6 at 923 K, bringing a ≈40% improvement over BPCCSO without graphene. This work further promotes the practical application of BiCuSeO-based materials and this facile and effective strategy can also be extended to other thermoelectric systems.

Robustly Boosting Thermoelectric Performance of N-Type PbSe via Lattice Plainification and Dynamic Doping

Ideal thermoelectrics shall possess a high average ZT, which relies on high carrier mobility and appropriate carrier density at operating temperature. However, conventional doping usually results in a temperature-independent carrier concentration, making performance optimization over a wide temperature range be challenging. This work demonstrates the combination of lattice plainification and dynamic doping strategies is an effective route to boost the average ZT of N-type PbSe. Because Sn and Pb have similar ionic radii and electronegativity, this allows Sn to fill the intrinsic Pb vacancies and effectively improves the carrier mobility of PbSe to 1300 cm2 V-1 s-1. Furthermore, a trace amount of Cu is introduced into the Sn-filled PbSe to optimize the carrier concentration. The extra Cu is situated in the interstitial sides of the lattice, which undergoes a dissolution-precipitation process with temperature, leading to a strongly temperature-dependent carrier density in the material. This dynamic doping effectively improves the electrical transport properties and is also valid to suppress the lattice thermal conductivity. Ultimately, the resulting PbSn0.004Se+3‰Cu obtains a maximum ZT of ≈1.7 at 800 K and an average ZT of ≈1.0, with a 7.7% power generation efficiency in a single-arm device, showing significant potential for commercial application.

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Metavalent bonding is a unique bonding mechanism responsible for exceptional properties of materials used in thermoelectric, phase-change, and optoelectronic devices. For thermoelectrics, the desired performance of metavalently bonded materials can be tuned by doping foreign atoms. Incorporating dopants to form solid solutions or second phases is a crucial route to tailor the charge and phonon transport. Yet, it is difficult to predict if dopants will form a secondary phase or a solid solution, which hinders the tailoring of microstructures and material properties. Here, we propose that the solid solution is more easily formed between metavalently bonded solids, while precipitates prefer to exist in systems mixed by metavalently bonded and other bonding mechanisms. We demonstrate this in a metavalently bonded GeTe compound alloyed with different sulfides. We find that S can dissolve in the GeTe matrix when alloyed with metavalently bonded PbS. In contrast, S-rich second phases are omnipresent via alloying with covalently bonded GeS and SnS. Benefiting from the reduced phonon propagation and the optimized electrical transport properties upon doping PbS in GeTe, a high figure-of-merit ZT of 2.2 at 773 K in (Ge0.84Sb0.06Te0.9)(PbSe)0.05(PbS)0.05 is realized. This strategy can be applied to other metavalently bonded materials to design properties beyond thermoelectrics.

Enhanced High-Temperature Thermoelectric Performance in Te-Doped Electronegative Element-Filled Skutterudites via Suppressing Bipolar Effects and Enhanced Phonon Scattering

CoSb3-based skutterudites have great potential as midtemperature thermoelectric (TE) materials due to their low cost and excellent electrical and mechanical properties. Their application, however, is limited by the high thermal conductivity and the degradation of TE performance at elevated temperatures, attributed to the adverse effects of bipolar diffusion. Herein, a series of SeyCo4Sb12-xTex compounds were successfully synthesized by combining a solid-state reaction and spark plasma sintering techniques to mitigate these challenges. It was found that doping Te at the Sb sites effectively enhanced the carrier concentration and suppressed the bipolar effect to obtain a superior power factor of ∼43 μW cm-1 K-2. Furthermore, due to the low resonant frequency of Se, filling voids of CoSb3 with Se achieved a low lattice thermal conductivity of 1.55 W m-1 K-1. Nevertheless, Se filling introduced additional holes, reducing the carrier concentration without a significant detriment of the carrier mobility. As a result, a maximum figure of merit of 1.23 was achieved for Se0.1Co4Sb11.55Te0.45 at 773 K. This work provides a valuable guidance for selecting appropriate filling and doping components to achieve synergistic optimization of the acoustics and electronics of CoSb3-based skutterudites.

Thermoelectric Cooling-Oriented Large Power Factor Realized in N-Type Bi2Te3 Via Deformation Potential Modulation and Giant Deformation

Thermoelectric refrigeration, utilizing Peltier effect, has great potential in all-solid-state active cooling field near room temperature. The performance of a thermoelectric cooling device is highly determined by the power factor of consisting materials besides the figure of merit. In this work, it is demonstrated that successive addition of Cu and Nd can realize non-trivial modulation of deformation potential in n-type room temperature thermoelectric material Bi2Te2.7Se0.3 and result in a significant increment of electron mobility and remarkably enhanced power factor. Following giant hot deformation process improves grain texturing and strengthens inter-layer interaction in Bi2Te2.7Se0.3 lattice, further pushing the power factor to ≈47 µW cm-1 K-2 at 300 K and maximal figure of merit ZTmax to ≈1.34 at 423 K with average ZTave of ≈1.27 at 300-473 K. Moreover, robust compressive strength is enhanced to ≈146.6 MPa. The corresponding finite element simulations demonstrate large temperature differences ΔT of ≈70 K and a maximal coefficient of performance COP ≈ 10.6 (hot end temperature at 300 K), which can be achieved in a ten-pair thermoelectric cooling virtual module. The strategies and results as shown in this work can further advance the application of n-type Bi2Te3 for thermoelectric cooling.

Advancing flexible thermoelectrics for integrated electronics

With the increasing demand for energy and the climate challenges caused by the consumption of traditional fuels, there is an urgent need to accelerate the adoption of green and sustainable energy conversion and storage technologies. The integration of flexible thermoelectrics with other various energy conversion technologies plays a crucial role, enabling the conversion of multiple forms of energy such as temperature differentials, solar energy, mechanical force, and humidity into electricity. The development of these technologies lays the foundation for sustainable power solutions and promotes research progress in energy conversion. Given the complexity and rapid development of this field, this review provides a detailed overview of the progress of multifunctional integrated energy conversion and storage technologies based on thermoelectric conversion. The focus is on improving material performance, optimizing the design of integrated device structures, and achieving device flexibility to expand their application scenarios, particularly the integration and multi-functionalization of wearable energy conversion technologies. Additionally, we discuss the current development bottlenecks and future directions to facilitate the continuous advancement of this field.

High-Entropy Materials for Prospective Biomedical Applications: Challenges and Opportunities

With their unique structural characteristics, customizable chemical composition, and adjustable functional characteristics, high-entropy materials (HEMs) have triggered a wide range of interdisciplinary research, especially in the biomedical field. In this paper, the basic concept, core properties, and preparation methods of HEMs are first summarized, and then the application and development of HEMs in the field of biomedical are briefly described. Subsequently, based on the diverse and comprehensive properties of HEMs and a few reported cases, the possible application scenarios of HEMs in biological fields such as biosensors, antibacterial materials, therapeutics, bioimaging, and tissue engineering are prospectively predicted and discussed. Finally, their potential advantages and major challenges is summarized, which may provide useful guidance and principles for researchers to develop and optimize novel HEMs.

Nanostructured Ferecrystal Intergrowths with TaSe2 Unveiled High Thermoelectric Performance in n-Type SnSe

Ferecrystals, a distinctive class of misfit layered compounds, hold significant promise in manipulating the phonon transport owing to their two-dimensional (2D) natural superlattice-type structure and turbostratic (rotational) disorder present between the constituent layers. Integrating these 2D intergrowth structures as nanodomains embedded in a bulk thermoelectric matrix is a formidable challenge in synthetic chemistry, yet offers groundbreaking opportunities for efficient thermoelectrics. Here, we have achieved an exceptionally high thermoelectric figure of merit, zT ∼ 2.2, at 823 K in n-type Ta and Br-codoped SnSe, by successfully incorporating [(SnSe)1.15]7(TaSe2)1 ferecrystals with [110] SnSe//[100] TaSe2 orientation, as nanostructures with modulations in few nm in bulk SnSe solid-state matrix. While the presence of ferecrystal nanostructures induces strong scattering of heat-carrying phonons resulting in an ultralow lattice thermal conductivity (κL) of ∼0.18 W m-1 K-1 at 773 K, the Ta and Br codoping strategy increases the concentration of n-type charge carriers for enhanced electrical conductivity. Our approach provides a new pathway for damping the phonon transport and enhancing the thermoelectric performance in 2D layered materials.

Lattice Softening and Band Convergence in GeTe-Based Alloys for High Thermoelectric Performance

GeTe-based alloys have been studied as promising TE materials in the midtemperature range as a lead-free alternate to PbTe due to their nontoxicity. Our previous study on GeTe1-xIx revealed that I-doping increases lattice anharmonicity and decreases the structural phase transition temperature, consequently enhancing the thermoelectric performance. Our current work elucidates the synergistic interplay between band convergence and lattice softening, resulting in an enhanced thermoelectric performance for Ge1-ySbyTe0.9I0.1 (y = 0.10, 0.12, 0.14, and 0.16). Sb doping in GeTe0.9I0.1 serves a double role: first, it leads to lattice softening, thereby reducing lattice thermal conductivity; second, it promotes a band convergence, thus a higher valley degeneracy. The presence of lattice softening is corroborated by an increase in the internal strain ratio observed in X-ray diffraction patterns. Doping also introduces phonon scattering centers, further diminishing lattice thermal conductivity. Additionally, variations in the electronic band structure are indicated by an increase in density of state effective mass and a decrease in carrier mobility with Sb concentration. Besides, Sb doping optimizes the carrier concentration efficiently. Through a two-band modeling and electronic band structure calculations, the valence band convergence due to Sb doping can be confirmed. Specifically, the energy difference between valence bands progressively narrows upon Sb doping in Ge1-ySbyTe0.9I0.1 (y = 0, 0.02, 0.05, 0.10, 0.12, 0.14, and 0.16). As a culmination of these effects, we have achieved a significant enhancement in zT for Ge1-ySbyTe0.9I0.1 (y = 0.10, 0.12, 0.14, and 0.16) across the entire range of measured temperatures. Notably, the sample with y = 0.12 exhibits the highest zT value of 1.70 at 723 K.

Improving the Long-Term Stability of PbTe-Based Thermoelectric Modules: From Nanostructures to Packaged Module Architecture

Nanostructured lead telluride PbTe is among the best-performing thermoelectric materials, for both p- and n-types, for intermediate temperature applications. However, the fabrication of power-generating modules based on nanostructured PbTe still faces challenges related to the stability of the materials, especially nanoprecipitates, and the bonding of electric contacts. In this study, in situ high-temperature transmission electron microscopy observation confirmed the stability of nanoprecipitates in p-type Pb0.973Na0.02Ge0.007Te up to at least ∼786 K. Then, a new architecture for a packaged module was developed for improving durability, preventing unwanted interaction between thermoelectric materials and electrodes, and for reducing thermal stress-induced crack formation. Finite element method simulations of thermal stresses and power generation characteristics were utilized to optimize the new module architecture. Legs of nanostructured p-type Pb0.973Na0.02Ge0.007Te (maximum zT ∼ 2.2 at 795 K) and nanostructured n-type Pb0.98Ga0.02Te (maximum zT ∼ 1.5 at 748 K) were stacked with flexible Fe-foil diffusion barrier layers and Ag-foil-interconnecting electrodes forming stable interfaces between electrodes and PbTe in the packaged module. For the bare module, a maximum conversion efficiency of ∼6.8% was obtained for a temperature difference of ∼480 K. Only ∼3% reduction in output power and efficiency was found after long-term operation of the bare module for ∼740 h (∼31 days) at a hot-side temperature of ∼673 K, demonstrating good long-term stability.

Carrier-phonon decoupling in perovskite thermoelectrics via entropy engineering

Thermoelectrics converting heat and electricity directly attract broad attentions. To enhance the thermoelectric figure of merit, zT, one of the key points is to decouple the carrier-phonon transport. Here, we propose an entropy engineering strategy to realize the carrier-phonon decoupling in the typical SrTiO3-based perovskite thermoelectrics. By high-entropy design, the lattice thermal conductivity could be reduced nearly to the amorphous limit, 1.25 W m-1 K-1. Simultaneously, entropy engineering can tune the Ti displacement, improving the weighted mobility to 65 cm2 V-1 s-1. Such carrier-phonon decoupling behaviors enable the greatly enhanced μW/κL of ~5.2 × 103 cm3 K J-1 V-1. The measured maximum zT of 0.24 at 488 K and the estimated zT of ~0.8 at 1173 K in (Sr0.2Ba0.2Ca0.2Pb0.2La0.2)TiO3 film are among the best of n-type thermoelectric oxides. These results reveal that the entropy engineering may be a promising strategy to decouple the carrier-phonon transport and achieve higher zT in thermoelectrics.

Half-metallization Atom-Fingerprints Achieved at Ultrafast Oxygen-Evaporated Pyrochlores for Acidic Water Oxidation

The stability and catalytic activity of acidic oxygen evolution reaction (OER) are strongly determined by the coordination states and spatial symmetry among metal sites at catalysts. Herein, an ultrafast oxygen evaporation technology to rapidly soften the intrinsic covalent bonds using ultrahigh electrical pulses is suggested, in which prospective charged excited states at this extreme avalanche condition can generate a strong electron-phonon coupling to rapidly evaporate some coordinated oxygen (O) atoms, finally leading to a controllable half-metallization feature. Simultaneously, the relative metal (M) site arrays can be orderly locked to delineate some intriguing atom-fingerprints at pyrochlore catalysts, where the coexistence of metallic bonds (M─M) and covalent bonds (M─O) at this symmetry-breaking configuration can partially restrain crystal field effect to generate a particular high-spin occupied state. This half-metallization catalyst can effectively optimize the spin-related reaction kinetics in acidic OER, giving rise to 10.3 times (at 188 mV overpotential) reactive activity than pristine pyrochlores. This work provides a new understanding of half-metallization atom-fingerprints at catalyst surfaces to accelerate acidic water oxidation.

High-performance Mg3Sb2-based thermoelectrics with reduced structural disorder and microstructure evolution

Mg3Sb2-based thermoelectrics show great promise for next-generation thermoelectric power generators and coolers owing to their excellent figure of merit (zT) and earth-abundant composition elements. However, the complexity of the defect microstructure hinders the advancement of high performance. Here, the defect microstructure is modified via In doping and prolonged sintering time to realize the reduced structural disorder and microstructural evolution, synergistically optimizing electron and phonon transport via a delocalization effect. As a result, an excellent carrier mobility of ~174 cm2 V-1 s-1 and an ultralowκ l a t of ~0.42 W m-1 K-1 are realized in this system, leading to an ultrahigh zT of ~2.0 at 723 K. The corresponding single-leg module demonstrates a high conversion efficiency of ~12.6% with a 425 K temperature difference, and the two-pair module of Mg3Sb2/MgAgSb displays ~7.1% conversion efficiency with a 276 K temperature difference. This work paves a pathway to improve the thermoelectric performance of Mg3Sb2-based materials, and represents a significant step forward for the practical application of Mg3Sb2-based devices.

Approaching crystal's limit of thermoelectrics by nano-sintering-aid at grain boundaries

Grain boundary plays a vital role in thermoelectric transports, leading to distinct properties between single crystals and polycrystals. Manipulating the grain boundary to realize good thermoelectric properties in polycrystals similar as those of single crystals is a long-standing task, but it is quite challenging. Herein, we develop a liquid-phase sintering strategy to successfully introduce Mg2Cu nano-sintering-aid into the grain boundaries of Mg3(Bi, Sb)2-based materials. The nano-aid helps to enlarge the average grain size to 23.7 μm and effectively scatter phonons, leading to excellent electrical transports similar as those of single crystals and ultralow lattice thermal conductivity as well as exceptional thermoelectric figure of merit (1.5 at 500 K) and conversion efficiency (7.4% under temperature difference of 207 K). This work provides a simple but effective strategy for the fabrication of high-performance polycrystals for large-scale applications.

Multi-heterojunctioned plastics with high thermoelectric figure of merit

Conjugated polymers promise inherently flexible and low-cost thermoelectrics for powering the Internet of Things from waste heat1,2. Their valuable applications, however, have been hitherto hindered by the low dimensionless figure of merit (ZT)3-6. Here we report high-ZT thermoelectric plastics, which were achieved by creating a polymeric multi-heterojunction with periodic dual-heterojunction features, where each period is composed of two polymers with a sub-ten-nanometre layered heterojunction structure and an interpenetrating bulk-heterojunction interface. This geometry produces significantly enhanced interfacial phonon-like scattering while maintaining efficient charge transport. We observed a significant suppression of thermal conductivity by over 60 per cent and an enhanced power factor when compared with individual polymers, resulting in a ZT of up to 1.28 at 368 kelvin. This polymeric thermoelectric performance surpasses that of commercial thermoelectric materials and existing flexible thermoelectric candidates. Importantly, we demonstrated the compatibility of the polymeric multi-heterojunction structure with solution coating techniques for satisfying the demand for large-area plastic thermoelectrics, which paves the way for polymeric multi-heterojunctions towards cost-effective wearable thermoelectric technologies.

Realization of Fine-Tuning the Lattice Thermal Conductivity and Anharmonicity in Layered Semiconductors via Entropy Engineering

Entropy engineering is widely proven to be effective in achieving ultra-low thermal conductivity for well-performed thermoelectric and heat management applications. However, no strong correlation between entropy and lattice thermal conductivity is found until now, and the fine-tuning of thermal conductivity continuously via entropy-engineering in a wide entropy range is still lacking. Here, a series of high-entropy layered semiconductors, Ni1- x(Fe0.25Co0.25Mn0.25Zn0.25)xPS3, where 0 ≤ x < 1, with low mass/size disorder is designed. High-purity samples with mixing configuration entropy of metal atomic site in a wide range of 0-1.61R are achieved. Umklapp phonon-phonon scattering is found to be the dominating phonon scattering mechanism, as revealed by the linear T-1 dependence of thermal conductivity. Meanwhile, fine tuning of the lattice thermal conductivity via continuous entropy engineering at metal atomic sites is achieved, in an almost linear dependence in middle-/high- entropy range. Moreover, the slope of the κ - T-1 curve reduces with the increase in entropy, and a linear response of the reduced Grüneisen parameter is revealed. This work provides an entropy engineering strategy by choosing multiple metal elements with low mass/size disorder to achieve the fine tuning of the lattice thermal conductivity and the anharmonic effect.

Exceptional figure of merit achieved in boron-dispersed GeTe-based thermoelectric composites

GeTe is a promising p-type material with increasingly enhanced thermoelectric properties reported in recent years, demonstrating its superiority for mid-temperature applications. In this work, the thermoelectric performance of GeTe is improved by a facile composite approach. We find that incorporating a small amount of boron particles into the Bi-doped GeTe leads to significant enhancement in power factor and simultaneous reduction in thermal conductivity, through which the synergistic modulation of electrical and thermal transport properties is realized. The thermal mismatch between the boron particles and the matrix induces high-density dislocations that effectively scatter the mid-frequency phonons, accounting for a minimum lattice thermal conductivity of 0.43 Wm-1K-1 at 613 K. Furthermore, the presence of boron/GeTe interfaces modifies the interfacial potential barriers, resulting in increased Seebeck coefficient and hence enhanced power factor (25.4 μWcm-1K-2 at 300 K). Consequently, we obtain a maximum figure of merit Zmax of 4.0 × 10-3 K-1 at 613 K in the GeTe-based composites, which is the record-high value in GeTe-based thermoelectric materials and also superior to most of thermoelectric systems for mid-temperature applications. This work provides an effective way to further enhance the performance of GeTe-based thermoelectrics.

Realizing a Superior Conversion Efficiency of ≈11.3% in the Group IV-VI Thermoelectric Module

GeTe-based materials exhibit superior thermoelectric performance, while the development of power generation devices has mainly been limited by the challenge of designing the interface due to the phase transition in GeTe. In this work, via utilizing the low-temperature nano-Ag sintering technique and screening suitable Ti-Al alloys, a reliable interface with excellent connection performance has been realized. The Ti-Al intermetallic compounds effectively inhibit the diffusion process at Ti-34Al/Ge0.9Sb0.1Te interface. Thus, the thickness of the interfacial reaction layer only increases by ≈2.08 µm, and the interfacial electrical contact resistivity remains as low as ≈15.2 µΩ cm2 even after 30 days of isothermal aging at 773 K. A high conversion efficiency of ≈11.3% has been achieved in the GeTe/PbTe module at a hot-side temperature of 773 K and a cold-side temperature of 300 K. More importantly, the module's performance and the reliability of the interface remain consistently stable throughout 50 thermal cycles and long-term aging. This work promotes the application of high-performance GeTe materials for thermoelectric power generation.

Tailoring local chemical fluctuation of high-entropy structures in thermoelectric materials

In high-entropy materials, local chemical fluctuation from multiple elements inhabiting the same crystallographic site plays a crucial role in their unique properties. Using atomic-resolution chemical mapping, we identified the respective contributions of different element characteristics on the local chemical fluctuation of high-entropy structures in thermoelectric materials. Electronegativity and mass had a comparable influence on the fluctuations of constituent elements, while the radius made a slight contribution. The local chemical fluctuation was further tailored by selecting specific elements to induce large lattice distortion and strong strain fluctuation to lower lattice thermal conductivity independent of increased entropy. The chemical bond fluctuation induced by the electronegativity difference had a noticeable contribution to the composition-dependent lattice thermal conductivity in addition to the known fluctuations of mass and strain field. Our findings provide a fundamental principle for tuning local chemical fluctuation and lattice thermal conductivity in high-entropy thermoelectric materials.

Screening Weldable Metal Electrodes for Ag2Se Thermoelectric Devices below 300 °C

Thermoelectricity has been considered as the most important solution of generating electricity, particularly from low-grade heat below 300 °C. Despite efforts in recent years on exploring alternative materials to only commercialized Bi2Te3, the practical implementation of these new materials has been hindered by inadequate investigation into device design. Given that the utilization of weldable electrodes offers advantages in technical compatibility for a large-scale assembly of thermoelectric elements into modules, a thorough investigation into the potential of weldable metal electrodes at T < 300 °C is imperative. In this work, the diffusion of 11 kinds of thermoelectric materials in common weldable metals (Ni, Fe, Cu, and Ag) was screened. Ag is sorted out as a promising weldable electrode that can directly bond to thermoelectric Ag2Se in this temperature range, leading to a minimization of an interfacial contact resistivity down to 11 μΩ cm2 in a design of the Ag/Ag2Se/Ag structure. The conversion efficiency of ∼3% at ΔT of 95 K with an excellent stability indicates Ag2Se as a top alternative to n-type Bi2Te3 for low-grade heat recovery.

Realizing high-efficiency thermoelectric module by suppressing donor-like effect and improving preferred orientation in n-type Bi2(Te, Se)3

Thermoelectric materials have a wide range of application because they can be directly used in refrigeration and power generation. And the Bi2Te3 stand out because of its excellent thermoelectric performance and are used in commercial thermoelectric devices. However, n-type Bi2Te3 has seriously hindered the development of Bi2Te3-based thermoelectric devices due to its weak mechanical properties and inferior thermoelectric performance. Therefore, it is urgent to develop a high-performance n-type Bi2Te3 polycrystalline. In this work, we employed interstitial Cu and the hot deformation process to optimize the thermoelectric properties of Bi2Te2.7Se0.3, and a high-performance thermoelectric module was fabricated based on this material. Our combined theoretical and experimental effort indicates that the interstitial Cu reduce the defect density in the matrix and suppresses the donor-like effect, leading to a lattice plainification effect in the material. In addition, the two-step hot deformation process significantly improves the preferred orientation of the material and boosts the mobility. As a result, a maximum ZT of 1.27 at 373 K and a remarkable high ZTave of 1.22 across the temperature range of 300-425 K are obtained. The thermoelectric generator (TEG, 7-pair) and thermoelectric cooling (TEC, 127-pair) modules were fabricated with our n-type textured Cu0.01Bi2Te2.7Se0.3 coupled with commercial p-type Bi2Te3. The TEC module demonstrates superior cooling efficiency compared with the commercial Bi2Te3 device, achieving a ΔT of 65 and 83.4 K when the hot end temperature at 300 and 350 K, respectively. In addition, the TEG module attains an impressive conversion efficiency of 6.5% at a ΔT of 225 K, which is almost the highest value among the reported Bi2Te3-based TEG modules.

Tailoring thermoelectric performance ofn-type Bi2Te3through defect engineering and conduction band convergence

Bi2Te3, an archetypical tetradymite, is recognised as a thermoelectric (TE) material of potential application around room temperature. However, large energy gap (ΔEc) between the light and heavy conduction bands results in inferior TE performance in pristine bulkn-type Bi2Te3. Herein, we propose enhancement in TE performance of pristinen-type Bi2Te3through purposefully manipulating defect profile and conduction band convergence mechanism. Twon-type Bi2Te3samples, S1 and S2, are prepared by melting method under different synthesis condition. The structural as well as microstructural evidence of the samples are obtained through powder x-ray diffraction and transmission electron microscopic study. Optothermal Raman spectroscopy is utilized for comprehensive study of temperature dependent phonon vibrational modes and total thermal conductivity (κ) of the samples which further validates the experimentally measured thermal conductivity. The Seebeck coefficient value is significantly increased from 235 μVK-1(sample S1) to 310 μVK-1(sample S2). This is further justified by conduction band convergence, where ΔEcis reduced from 0.10 eV to 0.05 eV, respectively. To verify the band convergence, the double band Pisarenko model is employed. Large power factor (PF) of 2190 μWm-1K-2and lowerκvalue leading toZTof 0.56 at 300 K is gained in S2. The obtainedPFandZTvalue are among the highest values reported for pristinen-type bulk Bi2Te3. In addition, appreciable value of TE quality factor and compatibility factor (2.7 V-1) at room temperature are also achieved, indicating the usefulness of the material in TE module.

Synergistic Combination of Sb2Si2Te6 Additives for Enhanced Average ZT and Single-Leg Device Efficiency of Bi0.4Sb1.6Te3-based Composites

Thermoelectric materials are highly promising for waste heat harvesting. Although thermoelectric materials research has expanded over the years, bismuth telluride-based alloys are still the best for near-room-temperature applications. In this work, a ≈38% enhancement of the average ZT (300-473 K) to 1.21 is achieved by mixing Bi0.4Sb1.6Te3 with an emerging thermoelectric material Sb2Si2Te6, which is significantly higher than that of most BiySb2-yTe3-based composites. This enhancement is facilitated by the unique interface region between the Bi0.4Sb1.6Te3 matrix and Sb2Si2Te6-based precipitates with an orderly atomic arrangement, which promotes the transport of charge carriers with minimal scattering, overcoming a common factor that is limiting ZT enhancement in such composites. At the same time, high-density dislocations in the same region can effectively scatter the phonons, decoupling the electron-phonon transport. This results in a ≈56% enhancement of the thermoelectric quality factor at 373 K, from 0.41 for the pristine sample to 0.64 for the composite sample. A single-leg device is fabricated with a high efficiency of 5.4% at ΔT = 164 K further demonstrating the efficacy of the Sb2Si2Te6 compositing strategy and the importance of the precipitate-matrix interface microstructure in improving the performance of materials for relatively low-temperature applications.

Complete miscibility of immiscible elements at the nanometre scale

Understanding the mixing behaviour of elements in a multielement material is important to control its structure and property. When the size of a multielement material is decreased to the nanoscale, the miscibility of elements in the nanomaterial often changes from its bulk counterpart. However, there is a lack of comprehensive and quantitative experimental insight into this process. Here we explored how the miscibility of Au and Rh evolves in nanoparticles of sizes varying from 4 to 1 nm and composition changing from 15% Au to 85% Au. We found that the two immiscible elements exhibit a phase-separation-to-alloy transition in nanoparticles with decreased size and become completely miscible in sub-2 nm particles across the entire compositional range. Quantitative electron microscopy analysis and theoretical calculations were used to show that the observed immiscibility-to-miscibility transition is dictated by particle size, composition and possible surface adsorbates present under the synthesis conditions.

Clarifying the four core effects of high-entropy materials

High-entropy materials emerged as a field of research in 2004, when the first research on high-entropy alloys was published. The scope was soon expanded from high-entropy alloys to medium-entropy alloys, as well as to ceramics, polymers and composite materials. A fundamental understanding on high-entropy materials was proposed in 2006 by the 'four core effects' - high-entropy, severe-lattice-distortion, sluggish-diffusion and cocktail effects - which are often used to describe and explain the mechanisms of various peculiar phenomena associated with high-entropy materials. Throughout the years, the effects have been examined rigorously, and their validity has been affirmed. This Perspective discusses the fundamental understanding of the four core effects in high-entropy materials and gives further insights to strengthen the understanding for these effects. All these clarifications are believed to be helpful in understanding low-to-high-entropy materials as well as to aid the design of materials when studying new compositions or pursuing their use in applications.

Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb)2Te3

P-type Bi2-xSbxTe3 compounds are crucial for thermoelectric applications at room temperature, with Bi0.5Sb1.5Te3 demonstrating superior performance, attributed to its maximum density-of-states effective mass (m*). However, the underlying electronic origin remains obscure, impeding further performance optimization. Herein, we synthesized high-quality Bi2-xSbxTe3 (00 l) films and performed comprehensive angle-resolved photoemission spectroscopy (ARPES) measurements and band structure calculations to shed light on the electronic structures. ARPES results directly evidenced that the band convergence along the [Formula: see text]-[Formula: see text] direction contributes to the maximum m* of Bi0.5Sb1.5Te3. Moreover, strategic manipulation of intrinsic defects optimized the hole density of Bi0.5Sb1.5Te3, allowing the extra valence band along [Formula: see text]-[Formula: see text] to contribute to the electrical transport. The synergy of the above two aspects documented the electronic origins of the Bi0.5Sb1.5Te3's superior performance that resulted in an extraordinary power factor of ~5.5 milliwatts per meter per square kelvin. The study offers valuable guidance for further performance optimization of p-type Bi2-xSbxTe3.

High-Entropy Strategy to Achieve Electronic Band Convergence for High-Performance Thermoelectrics

Multiband convergence has attracted significant interest due to its positive effects on further improving thermoelectric performance. However, the current research mainly focuses on two- or three-band convergence in lead chalcogenides through doping and alloying. Therefore, exploring a new strategy to facilitate more-band convergence has instructive significance and practical value in thermoelectric research. Herein, we first propose a high-entropy strategy to achieve four-band convergence for optimizing thermoelectric performance. Taking high-entropy AgSbPbSnGeTe5 as an example, we found that the emergence of more-band convergence occurs as the configuration entropy increases; in particular, the four-band convergence occurs in high-entropy AgSbPbSnGeTe5. The overlap of multiatom orbitals in the high-entropy sample contributes to the convergence of four valence bands, promoting the improvement of electrical performance. Meanwhile, due to large lattice distortion and disordered atoms, the phonon mean free path is effectively compressed, resulting in low lattice thermal conductivity of high-entropy AgSbPbSnGeTe5. Consequently, AgSbPbSnGeTe5 achieved an intrinsically high ZT value of 1.22 at 673 K, providing a cornerstone for further optimizing thermoelectric performance. For example, by generally optimizing the carrier concentration, a peak ZT value of ∼1.75 at 723 K is achieved. These insights offer a comprehensive understanding of the band structure affected by unique structures of high-entropy materials and also shed useful light on innovation mechanisms and functionalities for future improvement of thermoelectric performance.

Nanostructured High Entropy Alloys as Structural and Functional Materials

Since their introduction in 2004, high entropy alloys (HEAs) have attracted significant attention due to their exceptional mechanical and functional properties. Advances in our understanding of atomic-scale ordering and phase formation in HEAs have facilitated the development of fabrication techniques for synthesizing nanostructured HEAs. These materials hold immense potential for applications in various fields including automobile industries, aerospace engineering, microelectronics, and clean energy, where they serve as either structural or functional materials. In this comprehensive Review, we conduct an in-depth analysis of the mechanical and functional properties of nanostructured HEAs, with a particular emphasis on the roles of different nanostructures in modulating these properties. To begin, we explore the intrinsic and extrinsic factors that influence the formation and stability of nanostructures in HEAs. Subsequently, we delve into an examination of the mechanical and electrocatalytic properties exhibited by bulk or three-dimensional (3D) nanostructured HEAs, as well as nanosized HEAs in the form of zero-dimensional (0D) nanoparticles, one-dimensional (1D) nanowires, or two-dimensional (2D) nanosheets. Finally, we present an outlook on the current research landscape, highlighting the challenges and opportunities associated with nanostructure design and the understanding of structure-property relationships in nanostructured HEAs.

High-entropy materials for thermoelectric applications: towards performance and reliability

High-entropy materials (HEMs), including alloys, ceramics and other entropy-stabilized compounds, have attracted considerable attention in different application fields. This is due to their intrinsically unique concept and properties, such as innovative chemical composition, structural characteristics, and correspondingly improved functional properties. By establishing an environment with different chemical compositions, HEMs as novel materials possessing superior attributes present unparalleled prospects when compared with their conventional counterparts. Notably, great attention has been paid to investigating HEMs such as thermoelectrics (TE), especially for application in energy-related fields. In this review, we started with the basic definitions of TE fundamentals, the existing thermoelectric materials (TEMs), and the strategies adopted for their improvement. Moreover, we introduced HEMs, summarized the core effects of high-entropy (HE), and emphasized how HE will open up new avenues for designing high-entropy thermoelectric materials (HETEMs) with promising performance and high reliability. Through selecting and analyzing recent scientific publications, this review outlines recent scientific breakthroughs and the associated challenges in the field of HEMs for TE applications. Finally, we classified the different types of HETEMs based on their structure and properties and discussed recent advances in the literature.

Zinc Doping Induces Enhanced Thermoelectric Performance of Solvothermal SnTe

The creation of hierarchical nanostructures can effectively strengthen phonon scattering to reduce lattice thermal conductivity for improving thermoelectric properties in inorganic solids. Here, we use Zn doping to induce a remarkable reduction in the lattice thermal conductivity in SnTe, approaching the theoretical minimum limit. Microstructure analysis reveals that ZnTe nanoprecipitates can embed within SnTe grains beyond the solubility limit of Zn in the Zn alloyed SnTe. These nanoprecipitates result in a substantial decrease of the lattice thermal conductivity in SnTe, leading to an ultralow lattice thermal conductivity of 0.50 W m-1 K-1 at 773 K and a peak ZT of ~0.48 at 773 K, marking an approximately 45 % enhancement compared to pristine SnTe. This study underscores the effectiveness of incorporating ZnTe nanoprecipitates in boosting the thermoelectric performance of SnTe-based materials.

Global band convergence design for high-performance thermoelectric power generation in Zintls

Electronic band convergence can have a beneficial impact on thermoelectric performance, but finding the right band-converged compositions is still time-consuming. We propose a method for designing a series of compositions with simultaneous band convergence in the high-entropy YbxCa1-xMgyZn2-ySb2 material by zeroing the weighted sum of crystal-field splitting energies of the parent compounds. We found that so-designed compositions have both larger power factors and lower thermal conductivities and that one of these compositions exhibits a large thermoelectric figure of merit value in comparison with to other p-type Zintls. Our material shows high stability both thermally and temporally. We then assembled an all-Zintl single-stage module, nontoxic and free of tellurium, that demonstrates an exceptional heat-to-electricity conversion efficiency exceeding 10% at a temperature difference of 475 kelvin.

Implications and Optimization of Domain Structures in IV-VI High-Entropy Thermoelectric Materials

High-entropy semiconductors are now an important class of materials widely investigated for thermoelectric applications. Understanding the impact of chemical and structural heterogeneity on transport properties in these compositionally complex systems is essential for thermoelectric design. In this work, we uncover the polar domain structures in the high-entropy PbGeSnSe1.5Te1.5 system and assess their impact on thermoelectric properties. We found that polar domains induced by crystal symmetry breaking give rise to well-structured alternating strain fields. These fields effectively disrupt phonon propagation and suppress the thermal conductivity. We demonstrate that the polar domain structures can be modulated by tuning crystal symmetry through entropy engineering in PbGeSnAgxSbxSe1.5+xTe1.5+x. Incremental increases in the entropy enhance the crystal symmetry of the system, which suppresses domain formation and loses its efficacy in suppressing phonon propagation. As a result, the room-temperature lattice thermal conductivity increases from κL = 0.63 Wm-1 K-1 (x = 0) to 0.79 Wm-1 K-1 (x = 0.10). In the meantime, the increase in crystal symmetry, however, leads to enhanced valley degeneracy and improves the weighted mobility from μw = 29.6 cm2 V-1 s-1 (x = 0) to 35.8 cm2 V-1 s-1 (x = 0.10). As such, optimal thermoelectric performance can be achieved through entropy engineering by balancing weighted mobility and lattice thermal conductivity. This work, for the first time, studies the impact of polar domain structures on thermoelectric properties, and the developed understanding of the intricate interplay between crystal symmetry, polar domains, and transport properties, along with the impact of entropy control, provides valuable insights into designing GeTe-based high-entropy thermoelectrics.

Enhancing the thermopower of single-molecule junctions by edge substitution effects

Heteroatom substitution and anchoring groups have an important impact on the thermoelectric properties of single-molecule junctions. Herein, thermoelectric properties of several anthracene derivative based single-molecule junctions are studied by means of first-principles calculations. In particular, we pay great attention to the edge substitution effects and find that edge substitution with nitrogen can induce a transmission peak near the Fermi energy, leading to large transmission coefficients and electrical conductance at the Fermi energy. Additionally, the steep shape of the transmission function gives rise to a high Seebeck coefficient. Therefore, an enhanced power factor can be expected. The robustness of this edge substitution effect has been examined by altering the electrode distance and introducing heteroatoms at different positions. The enhancement of the power factor due to edge substitution makes the studied single-molecule junction a promising candidate for efficient thermoelectric devices.

Pseudo-nanostructure and trapped-hole release induce high thermoelectric performance in PbTe

Thermoelectric materials can realize direct and mutual conversion between electricity and heat. However, developing a strategy to improve high thermoelectric performance is challenging because of strongly entangled electrical and thermal transport properties. We demonstrate a case in which both pseudo-nanostructures of vacancy clusters and dynamic charge-carrier regulation of trapped-hole release have been achieved in p-type lead telluride-based materials, enabling the simultaneous regulations of phonon and charge carrier transports. We realized a peak zT value up to 2.8 at 850 kelvin and an average zT value of 1.65 at 300 to 850 kelvin. We also achieved an energy conversion efficiency of ~15.5% at a temperature difference of 554 kelvin in a segmented module. Our demonstration shows promise for mid-temperature thermoelectrics across a range of different applications.

Chaotropic Effect-Boosted Thermogalvanic Ionogel Thermocells for All-Weather Power Generation

Ionic thermocells convert heat into electricity and are promising power sources for electronic devices. However, discontinuous and small electricity output limits practical use under varying environmental conditions. Here, a thermogalvanic ionogel with a high Seebeck coefficient (32.4 mV K-1) is designed. Thermocells that combine thermogalvanic ionogel-based thermocells, which realize all-weather power generation via passive radiative cooling, are also developed. These thermocells generate electricity continuously under varying weather conditions and over a wide temperature range (-40 to 90 °C), with a normalized power density of 25.84 mW m-2 K-2. Advanced characterization shows that the chaotropic effect enhances the Seebeck coefficient, while the self-supplying temperature difference given the radiative cooling structure enables all-weather power generation. These results provide an effective strategy for developing practical thermocells suitable for diverse daily and seasonal variations.