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Stone G, Shi Y, Jerry M, Stoica V, Paik H, Cai Z, Schlom DG, Engel-Herbert R, Datta S, Wen H, Chen LQ, Gopalan V. In-Operando Spatiotemporal Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312673. [PMID: 38441355 DOI: 10.1002/adma.202312673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Revised: 01/31/2024] [Indexed: 03/19/2024]
Abstract
The drive toward non-von Neumann device architectures has led to an intense focus on insulator-to-metal (IMT) and the converse metal-to-insulator (MIT) transitions. Studies of electric field-driven IMT in the prototypical VO2 thin-film channel devices are largely focused on the electrical and elastic responses of the films, but the response of the corresponding TiO2 substrate is often overlooked, since it is nominally expected to be electrically passive and elastically rigid. Here, in-operando spatiotemporal imaging of the coupled elastodynamics using X-ray diffraction microscopy of a VO2 film channel device on TiO2 substrate reveals two new surprises. First, the film channel bulges during the IMT, the opposite of the expected shrinking in the film undergoing IMT. Second, a microns thick proximal layer in the substrate also coherently bulges accompanying the IMT in the film, which is completely unexpected. Phase-field simulations of coupled IMT, oxygen vacancy electronic dynamics, and electronic carrier diffusion incorporating thermal and strain effects suggest that the observed elastodynamics can be explained by the known naturally occurring oxygen vacancies that rapidly ionize (and deionize) in concert with the IMT (MIT). Fast electrical-triggering of the IMT via ionizing defects and an active "IMT-like" substrate layer are critical aspects to consider in device applications.
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Affiliation(s)
- Greg Stone
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Yin Shi
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Matthew Jerry
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Vladimir Stoica
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Zhonghou Cai
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Roman Engel-Herbert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, Hausvogteiplatz 5, 10117, Berlin, Germany
| | - Suman Datta
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Haidan Wen
- Materials Science Division and Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
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Shabalin AG, Del Valle J, Hua N, Cherukara MJ, Holt MV, Schuller IK, Shpyrko OG. Nanoscale Imaging and Control of Volatile and Non-Volatile Resistive Switching in VO 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2005439. [PMID: 33230936 DOI: 10.1002/smll.202005439] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Revised: 10/26/2020] [Indexed: 06/11/2023]
Abstract
Control of the metal-insulator phase transition is vital for emerging neuromorphic and memristive technologies. The ability to alter the electrically driven transition between volatile and non-volatile states is particularly important for quantum-materials-based emulation of neurons and synapses. The major challenge of this implementation is to understand and control the nanoscale mechanisms behind these two fundamental switching modalities. Here, in situ X-ray nanoimaging is used to follow the evolution of the nanostructure and disorder in the archetypal Mott insulator VO2 during an electrically driven transition. Our findings demonstrate selective and reversible stabilization of either the insulating or metallic phases achieved by manipulating the defect concentration. This mechanism enables us to alter the local switching response between volatile and persistent regimes and demonstrates a new possibility for nanoscale control of the resistive switching in Mott materials.
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Affiliation(s)
- Anatoly G Shabalin
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Javier Del Valle
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Nelson Hua
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Mathew J Cherukara
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Martin V Holt
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Ivan K Schuller
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Oleg G Shpyrko
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
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Aliev AR, Akhmedov IR, Kakagasanov MG, Aliev ZA. Pre-Transition Phenomena in the Temperature Range of Structural Phase Transitions in Perchlorate Crystals. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A 2020. [DOI: 10.1134/s0036024420070055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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