Ultrafast Photocarrier Dynamics in Vertically Aligned SnS2 Nanoflakes Probing with Transient Terahertz Spectroscopy

By employing optical pump Terahertz (THz) probe spectroscopy, ultrafast photocarrier dynamics of a two-dimensional (2D) semiconductor, SnS2 nanoflake film, has been investigated systematically at room temperature. The dynamics of photoexcitation is strongly related to the density of edge sites and defects in the SnS2 nanoflakes, which is controllable by adjusting the height of vertically aligned SnS2 during chemical vapor deposition growth. After photoexcitation at 400 nm, the transient THz photoconductivity response of the films can be well fitted with bi-exponential decay function. The fast and slow processes are shorter in the thinner film than in the thicker sample, and both components are independent on the pump fluence. Hereby, we propose that edge-site trapping as well as defect-assisted electron-hole recombination are responsible for the fast and slow decay progress, respectively. Our experimental results demonstrate that the edge sites and defects in SnS2 nanoflakes play a dominant role in photocarrier relaxation, which is crucial in understanding the photoelectrochemical performance of SnS2 nanoflakes.

Enhancing Reverse Saturable Absorption in SnS2 Nanosheets by Plasma Treatment

The knowledge concerning the influence of defects on the nonlinear optical response of materials remains scarce so far. In this work, we have successfully introduced defects into SnS₂ nanosheets by plasma treatment and shown that a defect generation is an effective approach to significantly improve the reverse saturable absorption of SnS₂. The SnS₂ nanosheets treated with Ar plasma for 40 s exhibit a nonlinear absorption coefficient (β₀) as large as (2.9 ± 0.12) × 10⁴ cm GW^-1, which is nearly 9 times that of the untreated sample. The influence of Ar-plasma-treatment time, defect type, and defect number on the nonlinear absorption of SnS₂ nanosheets are also studied. Structure and spectroscopy characterization confirms the introduction of S and Sn vacancies with Ar-plasma etching. Surface photovoltage spectroscopy and density functional theory calculation indicate that S vacancies can induce in-gap states in the band gap. These in-gap states act as intermediate states for the successive absorption of photons during femtosecond laser excitation (namely, excited-state absorption). In contrast, Sn defects cannot lead to in-gap states and have a limited contribution to nonlinear absorption. Our result would provide a promising way to improve optical nonlinearities.