Controlling Hot Charge Carrier Transfer in Monolithic AlSiAl Heterostructures for Plasmonic On-Chip Energy Harvesting

The generation of hot carriers by Landau damping or chemical interface damping of plasmons is of particular interest to the fundamental aspects of extreme light-matter interactions. Hot charge carriers can be transferred to an attached acceptor for photochemical or photovoltaic energy conversion. However, these lose their excess energy and relax to thermal equilibrium within picoseconds and it is difficult to extract useful work thereof with thermodynamic efficiencies that are of interest for practical devices. Without a detailed understanding of the underlying plasmon decay processes and transfer mechanisms, proper material matching and design considerations for novel plasmonic devices are extremely challenging. Here, a multifunctional AlSiAl heterostructure device with tunable Schottky barriers is presented to control plasmon-induced hot carrier injection at an abrupt metal-semiconductor interface. Light absorption, surface plasmon generation, and separation of hot carriers arising from the non-radiative decay of surface plasmons are realized in a monolithic Schottky barrier field effect transistor. Aside from barrier modulation, a virtual p-n junction can be emulated in the semiconductor channel with the distinct merit that carrier concentration and polarity are tunable by electrostatic gating. The investigations are carried out with a view to possible use for CMOS-compatible plasmonic photovoltaics, with versatile implementations for autonomous nanosystems.

High-Throughput Area-Selective Spatial Atomic Layer Deposition of SiO2 with Interleaved Small Molecule Inhibitors and Integrated Back-Etch Correction for Low Defectivity

A first-of-its-kind area-selective deposition process for SiO₂  is developed consisting of film deposition with interleaved exposures to small molecule inhibitors (SMIs) and back-etch correction steps, within the same spatial atomic layer deposition (ALD) tool. The synergy of these aspects results in selective SiO₂  deposition up to ~23 nm with high selectivity and throughput, with SiO₂  growth area and ZnO nongrowth area. The selectivity is corroborated by both X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering spectroscopy (LEIS). The selectivity conferred by two different SMIs, ethylbutyric acid, and pivalic acid has been compared experimentally and theoretically. Density Functional Theory (DFT) calculations reveal that selective surface functionalization using both SMIs is predominantly controlled thermodynamically, while the better selectivity achieved when using trimethylacetic acid can be explained by its higher packing density compared to ethylbutyric acid. By employing the trimethylacetic acid as SMI on other starting surfaces (Ta₂ O₅ , ZrO₂ , etc.) and probing the selectivity, a broader use of carboxylic acid inhibitors for different substrates is demonstrated. It is believed that the current results highlight the subtleties in SMI properties such as size, geometry, and packing, as well as interleaved back-etch steps, which are key in developing ever more effective strategies for highly selective deposition processes.

Optical rectification and thermal currents in optical tunneling gap antennas

Electrically-contacted optical gap antennas are nanoscale interface devices enabling the transduction between photons and electrons. This new generation of device, usually constituted of metal elements (e.g. gold), captures visible to near infrared electromagnetic radiation and rectifies the incident energy in a direct-current (DC) electrical signal. However, light absorption by the metal may lead to additional thermal effects which need to be taken into account to understand the complete photo-response of the devices. The purpose of this communication is to discriminate the contribution of laser-induced thermo-electric effects in the photo-assisted electronic transport. We show case our analysis with the help of electromigrated devices.

Recent Progress of Nanogenerators for Green Energy Harvesting: Performance, Applications, and Challenges

Natural sources of green energy include sunshine, water, biomass, geothermal heat, and wind. These energies are alternate forms of electrical energy that do not rely on fossil fuels. Green energy is environmentally benign, as it avoids the generation of greenhouse gases and pollutants. Various systems and equipment have been utilized to gather natural energy. However, most technologies need a huge amount of infrastructure and expensive equipment in order to power electronic gadgets, smart sensors, and wearable devices. Nanogenerators have recently emerged as an alternative technique for collecting energy from both natural and artificial sources, with significant benefits such as light weight, low-cost production, simple operation, easy signal processing, and low-cost materials. These nanogenerators might power electronic components and wearable devices used in a variety of applications such as telecommunications, the medical sector, the military and automotive industries, and internet of things (IoT) devices. We describe new research on the performance of nanogenerators employing several green energy acquisition processes such as piezoelectric, electromagnetic, thermoelectric, and triboelectric. Furthermore, the materials, applications, challenges, and future prospects of several nanogenerators are discussed.

Dark Noise Suppression of NIR Response Enhanced Si-CMOS Sensor

We studied the effect of laser fluence on the dark noise performance of a laser-microstructured Si-based CMOS image sensor. The absorption characteristics and crystal properties of the microstructured sensor fabricated under different process conditions were investigated. Furthermore, a short-time etching method capable of improving the electrical performance of the laser-microstructured sensor was proposed. By removing amorphous silicon (a-Si) containing a large number of defects in the photosensitive surface of the microstructured Si-based CMOS image sensor, the etching method can effectively suppress the dark noise of the laser-microstructured Si-photodetector while maintaining the near-infrared response enhancement effect of the Si-photodetector irradiated by fs-laser. The results of the near-infrared imaging test show that on the basis of imaging brightness enhancement, the contrast ratio of the image formed by the CMOS image sensor in the microstructured region etched by RIE under short exposure time is significantly improved.

Quantum Tunneling Induced Optical Rectification and Plasmon-Enhanced Photocurrent in Nanocavity Molecular Junctions

Molecular junctions offer the opportunity for downscaling optoelectronic devices. Separating two electrodes with a single layer of molecules accesses the quantum-tunneling regime at low voltages (<1 V), where tunneling currents become highly sensitive to local nanometer-scale geometric features of the electrodes. These features generate asymmetries in the electrical response of the junction which combine with the incident oscillating optical fields to produce optical rectification and photocurrents. Maximizing photocurrents requires accurate control of the overall junction geometry and a large confined optical field in the optimal location. Plasmonic nanostructures such as metallic nanoparticles are prime candidates for this application, because their size and shape dictate a consistent junction geometry while strongly enhancing the optical field from incident light. Here we demonstrate a robust lithography-free molecular optoelectronic device geometry, where a metallic nanoparticle on a self-assembled molecular monolayer is sandwiched between planar bottom and semitransparent top electrodes, to create molecular junctions with reproducible morphology and electrical response. The well-defined geometry enables predictable and intense plasmonic localization, which we show creates optical-frequency voltages ∼ 30 mV in the molecular junction from 100 μW incident light, generating photocurrent by optical rectification (>10 μA/W) from only a few hundred molecules. Quantitative agreement is thus obtained between DC- and optical-frequency quantum-tunneling currents, predicted by a simple analytic equation. By measuring the degree of junction asymmetry for different molecular monolayers, we find that molecules with a large DC rectification ratio also boost zero-bias electrical asymmetry, making them good candidates for sensing and energy harvesting applications in combination with plasmonic nanomaterials.

Two-dimensional mapping of the electric field distribution inside vacuum microgaps observed in a scanning electron microscope

In this paper, we present an in-situ measurement method to directly observe the distribution of the local electric field between vacuum microgaps. The measurement was performed in-situ inside a high resolution scanning electron microscope (SEM), and the nature of the local electric field was characterized through secondary electron contrast images with the aid of Rutherford scattering theory. Based on the regular fringes in these contrast images, the distribution of the local electric field could be extracted from the contour lines of the fringes while the magnitude of the local electric field could be evaluated qualitatively by the gradient of the contour lines. The finite element method (FEM) simulation and the three-electrodes imaging experiment were also conducted, and the obtained two-dimensional electric field distribution agreed well with the FEM simulation, suggesting that the in-situ visualization technique could be useful for determining the local field enhancement behavior for various geometrical configurations and microscale structures. A physical mechanism for the local electric field mapping is suggested. This study demonstrates the potential of SEM imaging for obtaining information about the local electric field within microelectronic structures and devices.

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

Background: Electrically controlled optical metal antennas are an emerging class of nanodevices enabling a bilateral transduction between electrons and photons. At the heart of the device is a tunnel junction that may either emit light upon injection of electrons or generate an electrical current when excited by a light wave. The current study explores a technological route for producing these functional units based upon the electromigration of metal constrictions. Results: We combine multiple nanofabrication steps to realize in-plane tunneling junctions made of two gold electrodes, separated by a sub-nanometer gap acting as the feedgap of an optical antenna. We electrically characterize the transport properties of the junctions in the light of the Fowler-Nordheim representation and the Simmons model for electron tunneling. We demonstrate light emission from the feedgap upon electron injection and show examples of how this nanoscale light source can be coupled to waveguiding structures. Conclusion: Electromigrated in-plane tunneling optical antennas feature interesting properties with their unique functionality enabling interfacing electrons and photons at the atomic scale and with the same device. This technology may open new routes for device-to-device communication and for interconnecting an electronic control layer to a photonic architecture.

Optical wireless link between a nanoscale antenna and a transducing rectenna

Initiated as a cable-replacement solution, short-range wireless power transfer has rapidly become ubiquitous in the development of modern high-data throughput networking in centimeter to meter accessibility range. Wireless technology is now penetrating a higher level of system integration for chip-to-chip and on-chip radiofrequency interconnects. However, standard CMOS integrated millimeter-wave antennas have typical size commensurable with the operating wavelength, and are thus an unrealistic solution for downsizing transmitters and receivers to the micrometer and nanometer scale. Herein, we demonstrate a light-in and electrical signal-out, on-chip wireless near-infrared link between a 220 nm optical antenna and a sub-nanometer rectifying antenna converting the transmitted optical energy into direct electrical current. The co-integration of subwavelength optical functional devices with electronic transduction offers a disruptive solution to interface photons and electrons at the nanoscale for on-chip wireless optical interconnects.

Integrating optical and electrical components for communication systems is challenging due to the differences of scale. The authors have developed an on-chip light-to-electrical wireless link between a nanoantenna and an optical rectifier, envisioned as a solution for future integrated wireless interconnects.

Nonlinear photon-assisted tunneling transport in optical gap antennas

We introduce strongly coupled optical gap antennas to interface optical radiation with current-carrying electrons at the nanoscale. The transducer relies on the nonlinear optical and electrical properties of an optical gap antenna operating in the tunneling regime. We discuss the underlying physical mechanisms controlling the conversion involving d-band electrons and demonstrate that a simple two-wire optical antenna can provide advanced optoelectronic functionalities beyond tailoring the electromagnetic response of a single emitter. Interfacing an electronic command layer with a nanoscale optical device may thus be facilitated by the optical rectennas discussed here.

Engineered nanomaterials for solar energy conversion

Understanding how to engineer nanomaterials for targeted solar-cell applications is the key to improving their efficiency and could lead to breakthroughs in their design. Proposed mechanisms for the conversion of solar energy to electricity are those exploiting the particle nature of light in conventional photovoltaic cells, and those using the collective electromagnetic nature, where light is captured by antennas and rectified. In both cases, engineered nanomaterials form the crucial components. Examples include arrays of semiconductor nanostructures as an intermediate band (so called intermediate band solar cells), semiconductor nanocrystals for multiple exciton generation, or, in antenna-rectifier cells, nanomaterials for effective optical frequency rectification. Here, we discuss the state of the art in p-n junction, intermediate band, multiple exciton generation, and antenna-rectifier solar cells. We provide a summary of how engineered nanomaterials have been used in these systems and a discussion of the open questions.