Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching

Evaporation-Induced Hierarchical Assembly of Rigid Silicon Nanopillars Fabricated by a Scalable Two-Level Colloidal Lithography Approach

Periodic arrays of silicon nanowires/nanopillars are of great technological importance in developing novel electrical, optical, biosensing, and electromechanical devices. Here, we report a novel two-level colloidal lithography technology for making periodic arrays of single-crystalline silicon nanopillars (or nanocolumns) over large areas. Spin-coated monolayer silica colloidal crystals with unusual nonclose-packed structures are utilized as first-level etching masks in generating ordered polymer posts whose sizes can be much smaller than the templating silica microspheres. These polymer posts can then be used as second-level structural templates in fabricating highly ordered silicon nanopillars with broadly tunable geometries by employing metal-assisted chemical etching. As the silicon nanopillars are produced by direct wet etching on the surface of a single-crystalline silicon wafer, they are relatively free of volume defects and thus their bending strength approaches the predicted theoretical maximum. Most importantly, the unique nonclose-packed structure of the original colloidal template and the close-to-ideal mechanical property enables the formation of unusual open-structured hierarchical assemblies of rigid silicon nanopillars during water evaporation. Both experiments and numerical finite-difference time-domain modeling confirm the importance of high aspect ratios of the templated silicon nanopillars in achieving superior broadband antireflection properties. The large fraction of entrapped air in the hierarchically assembled silicon nanopillars further facilitates to accomplish superhydrophobic surface states, promising for developing self-cleaning antireflection coatings for many important optoelectronic applications.

Ordered Al xGa1- xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

The ternary III-V semiconductor compound, Al _xGa_{1 -x}As, is an important material that serves a central role within a variety of nanoelectronic, optoelectronic, and photovoltaic devices. With all of its uses, the material itself poses a host of fabrication difficulties stemming from conventional top-down processing, including standard wet-chemical etching and reactive-ion etching (RIE). Metal-assisted chemical etching (MacEtch) techniques provide low-cost and benchtop methods that combine many of the advantages of RIE and wet-chemical etching, without being hindered by many of their disadvantages. Here, inverse-progression MacEtch (I-MacEtch) of Au-patterned Al _xGa_{1 -x}As is demonstrated for the first time and is exploited for the generation of vertical and ordered nanopillar arrays. The etching solution employed here consists of citric acid (C₆H₈O₇) and hydrogen peroxide (H₂O₂). The I-MacEtch evolution is tracked in time for Al _xGa_{1 -x}As samples with compositions defined by x = 0.55, x = 0.60, and x = 0.70. The vertical and lateral etch rates (VER and LER, respectively) are shown to be tunable with Al fraction and temperature of the etching solution, based on modification of catalytically injected hole distributions. Control over the VER/LER ratio is demonstrated by tailoring etch conditions for single-step fabrication of ordered AlGaAs nanopillar arrays with predefined aspect ratios. Maximum VER and LER values of ∼40 nm/min and ∼105 nm/min, respectively, are measured for Al_0.55Ga_0.45As at a process temperature of 65 °C. The I-MacEtch nanofabrication methodology outlined in this study may be utilized for the processing of many devices, including high electron mobility transistors, distributed Bragg reflectors, lasers, light-emitting diodes, and multijunction solar cells containing AlGaAs components.

Controllable Fabrication of Non-Close-Packed Colloidal Nanoparticle Arrays by Ion Beam Etching

Polystyrene (PS) nanoparticle films with non-close-packed arrays were prepared by using ion beam etching technology. The effects of etching time, beam current, and voltage on the size reduction of PS particles were well investigated. A slow etching rate, about 9.2 nm/min, is obtained for the nanospheres with the diameter of 100 nm. The rate does not maintain constant with increasing the etching time. This may result from the thermal energy accumulated gradually in a long-time bombardment of ion beam. The etching rate increases nonlinearly with the increase of beam current, while it increases firstly then reach its saturation with the increase of beam voltage. The diameter of PS nanoparticles can be controlled in the range from 34 to 88 nm. Based on the non-close-packed arrays of PS nanoparticles, the ordered silicon (Si) nanopillars with their average diameter of 54 nm are fabricated by employing metal-assisted chemical etching technique. Our results pave an effective way to fabricate the ordered nanostructures with the size less than 100 nm.

Recent advancement on micro-/nano-spherical lens photolithography based on monolayer colloidal crystals

Highly ordered nanostructures have gained substantial interest in the research community due to their fascinating properties and wide applications.Micro-/nano-spherical lens photolithography (SLPL) has been recognized as an inexpensive, inherently parallel, and high-throughput approach to the creation of highly ordered nanostructures. SLPL based on monolayer colloidal crystals (MCCs) of self-assembled colloidal micro-/nano-spheres have recently made remarkable progress in overcoming the constraints of conventional photolithography in terms of cost, feature size, tunability, and pattern complexity. In this review, we highlight the current state-of-the-art in this field with an emphasis on the fabrication of a variety of highly ordered nanostructures based on this technique and their demonstrated applications in light emitting diodes, nano-patterning semiconductors, and localized surface plasmon resonance devices. Finally, we present a perspective on the future development of MCC-based SLPL technique, including a discussion on the improvement of the quality of MCCs and the compatibility of this technique with other semiconductor micromachining process for nanofabrication.

Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching

Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved. By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved.