Nucleation and growth of primary nanostructures in SrTiO3 homoepitaxy

Watching nanostructure growth: kinetically controlled diffusion and condensation of Xe in a surface metal organic network

Diffusion, nucleation and growth provide the fundamental access to control nanostructure growth. In this study, the temperature activated diffusion of Xe at and between different compartments of an on-surface metal organic coordination network on Cu(111) has been visualized in real space. Xe atoms adsorbed at lower energy sites become mobile with increased temperature and gradually populate energetically more favourable binding sites or remain in a delocalized 'fluid' form confined to diffusion along a topological subset of the on-surface network. These diffusion pathways can be studied individually under kinetic control via the chosen thermal energy kT of the sample and are determined by the network and sample architecture. The spatial distribution of Xe in its different modes of mobility and the time scales of the motion is revealed by Scanning Tunneling Microscopy (STM) at variable temperatures up to 40 K and subsequent cooling to 4 K. The system provides insight into the diffusion of a van der Waals gas on a complex structured surface and its nucleation and coarsening/growth into larger condensates at elevated temperature under thermodynamic conditions.

Imaging pulsed laser deposition growth of homo-epitaxial SrTiO3 by low-energy electron microscopy

By combining low-energy electron microscopy with in situ pulsed laser deposition we have developed a new technique for film growth analysis, making use of both diffraction and real-space information. Working at the growth temperature, we can use: the intensity and profile variations of the specular beam to follow the coverage in a layer-by-layer fashion; real-space microscopy to follow e.g. atomic steps at the surface; and electron reflectivity to probe the unoccupied band structure of the grown material. Here, we demonstrate our methodology for homo-epitaxial growth of SrTiO₃. Interestingly, the same combination of techniques will also be applicable to hetero-epitaxial oxide growth, largely extending the scope of research possibilities.

Direct Nanoscale Analysis of Temperature-Resolved Growth Behaviors of Ultrathin Perovskites on SrTiO3

Revealing growth mechanism of a thin film and properties of its film-substrate interface necessarily require microscopic investigations on the initial growth stages in temperature- and thickness-resolved manners. Here we applied in situ scanning tunneling microscopy and atomic force microscopy to investigate the growth dynamics in homo- (SrTiO3) and hetero- (SrRuO3) epitaxies on SrTiO3(001). A comparison of temperature-dependent surface structures of SrRuO3 and SrTiO3 films suggests that the peculiar growth mode switching from a "layer-by-layer" to "step-flow" type in a SrRuO3 films arises from a reduction of surface migration barrier, caused by the change in the chemical configuration of the interface between the topmost and underlying layers. Island densities in perovskite epitaxies exhibited a clear linear inverse-temperature dependence. A prototypical study on island nucleation stage of SrTiO3 homoepitaxy revealed that classical diffusion model is valid for the perovskite growths.