Effects of Defects on the Mechanical Properties of Kinked Silicon Nanowires

Atomic Simulations of Packing Structures, Local Stress and Mechanical Properties for One Silicon Lattice with Single Vacancy on Heating

The effect of vacancy defects on the structure and mechanical properties of semiconductor silicon materials is of great significance to the development of novel microelectronic materials and the processes of semiconductor sensors. In this paper, molecular dynamics is used to simulate the atomic packing structure, local stress evolution and mechanical properties of a perfect lattice and silicon crystal with a single vacancy defect on heating. In addition, their influences on the change in Young’s modulus are also analyzed. The atomic simulations show that in the lower temperature range, the existence of vacancy defects reduces the Young’s modulus of the silicon lattice. With the increase in temperature, the local stress distribution of the atoms in the lattice changes due to the migration of the vacancy. At high temperatures, the Young’s modulus of the silicon lattice changes in anisotropic patterns. For the lattice with the vacancy, when the temperature is higher than 1500 K, the number and degree of distortion in the lattice increase significantly, the obvious single vacancy and its adjacent atoms contracting inward structure disappears and the defects in the lattice present complex patterns. By applying uniaxial tensile force, it can be found that the temperature has a significant effect on the elasticity–plasticity behaviors of the Si lattice with the vacancy.

A Facile, Low-Cost Plasma Etching Method for Achieving Size Controlled Non-Close-Packed Monolayer Arrays of Polystyrene Nano-Spheres

Monolayer nano-sphere arrays attract great research interest as they can be used as templates to fabricate various nano-structures. Plasma etching, and in particular high-frequency plasma etching, is the most commonly used method to obtain non-close-packed monolayer arrays. However, the method is still limited in terms of cost and efficiency. In this study, we demonstrate that a low frequency (40 kHz) plasma etching system can be used to fabricate non-close-packed monolayer arrays of polystyrene (PS) nano-spheres with smooth surfaces and that the etching rate is nearly doubled compared to that of the high-frequency systems. The study reveals that the low-frequency plasma etching process is dominated by a thermal evaporation etching mechanism, which is different from the atom-scale dissociation mechanism that underlines the high-frequency plasma etching. It is found that the polystyrene nano-sphere size can be precisely controlled by either adjusting the etching time or power. Through introducing oxygen as the assisting gas in the low frequency plasma etching system, we achieved a coalesced polystyrene nano-sphere array and used it as a template for metal-assisted chemical etching. We demonstrate that the method can significantly improve the aspect ratio of the silicon nanowires to over 200 due to the improved flexure rigidity.