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Le L, Zeng H, Zhou W, Tang N, Yin SF, Kambe N, Qiu R. Catalyst-Free, Zn-Mediated Decarboxylative Coupling of Chlorostibines to Access Alkylstibines with Stable C(sp 3)-Sb Bonds. Org Lett 2024. [PMID: 38968445 DOI: 10.1021/acs.orglett.4c02132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/07/2024]
Abstract
Herein, decarboxylative C(sp3)-Sb coupling of aliphatic carboxylic acid derivatives with chlorostibines to access alkylstibines has been achieved. This catalyst-, ligand-, and base-free approach using zinc as a reductant affords various kinds of benzyldiarylstibines and other monoalkyldiarylstibines and tolerates various functional groups, including chlorine, bromine, hydroxyl, amide, sulfone, and cyano groups. The late-stage modification and the gram-scale experiments illustrate its potential application.
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Affiliation(s)
- Liyuan Le
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Huifan Zeng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Wenjun Zhou
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Niu Tang
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Shuang-Feng Yin
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
- College of Science, Central South University of Forestry and Technology, Changsha 410004, P. R. China
| | - Nobuaki Kambe
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Renhua Qiu
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
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Devkota S, Kuchoor H, Dawkins K, Pokharel R, Parakh M, Li J, Iyer S. Heterostructure axial GaAsSb ensemble near-infrared p-i-n based axial configured nanowire photodetectors. NANOTECHNOLOGY 2023; 34:265204. [PMID: 36893449 DOI: 10.1088/1361-6528/acc2c6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Accepted: 03/09/2023] [Indexed: 06/18/2023]
Abstract
In this work, we present a systematic design of growth experiments and subsequent characterization of self-catalyzed molecular beam epitaxially grown GaAsSb heterostructure axial p-i-n nanowires (NWs) on p-Si <111> for the ensemble photodetector (PD) application in the near-infrared region. Diverse growth methods have been explored to gain a better insight into mitigating several growth challenges by systematically studying their impact on the NW electrical and optical properties to realize a high-quality p-i-n heterostructure. The successful growth approaches are Te-dopant compensation to suppress the p-type nature of intrinsic GaAsSb segment, growth interruption for strain relaxation at the interface, decreased substrate temperature to enhance supersaturation and minimize the reservoir effect, higher bandgap compositions of the n-segment of the heterostructure relative to the intrinsic region for boosting the absorption, and the high-temperature ultra-high vacuumin situannealing to reduce the parasitic radial overgrowth. The efficacy of these methods is supported by enhanced photoluminescence (PL) emission, suppressed dark current in the heterostructure p-i-n NWs accompanied by increased rectification ratio, photosensitivity, and a reduced low-frequency noise level. The PD fabricated utilizing the optimized GaAsSb axial p-i-n NWs exhibited the longer wavelength cutoff at ∼1.1μm with a significantly higher responsivity of ∼120 A W-1(@-3 V bias) and a detectivity of 1.1 × 1013Jones operating at room temperature. Frequency and the bias independent capacitance in the pico-Farad (pF) range and substantially lower noise level at the reverse biased condition, show the prospects of p-i-n GaAsSb NWs PD for high-speed optoelectronic applications.
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Affiliation(s)
- Shisir Devkota
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Hirandeep Kuchoor
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Kendall Dawkins
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Rabin Pokharel
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Mehul Parakh
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Jia Li
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Shanthi Iyer
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
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Wen L, Pan D, Liao D, Zhao J. Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular-beam epitaxy. NANOTECHNOLOGY 2020; 31:155601. [PMID: 31783375 DOI: 10.1088/1361-6528/ab5d78] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We have successfully fabricated foreign-catalyst-free GaSb nanowires directly on cleaved Si (111) substrates by molecular-beam epitaxy. We find that GaSb nanowires with the absence and presence of Ga droplets at the tip can be simultaneously obtained on cleaved Si substrates without Ga pre-deposition. Systematic morphological and structural studies verify that the two kinds of nanowires presented have different growth mechanisms, which are vapor-solid and vapor-liquid-solid mechanisms. The growth of GaSb nanowires can also be achieved on cleaved Si (110) and Si (100) substrates. The cleavage plane of the Si substrate has an obvious influence on the growth of the GaSb nanowires. The growth direction and crystal quality of catalyst-free nanowires are independent of the cleavage plane of the substrate. Our results may facilitate the understanding of the growth mechanism of III-V nanowires and the integration of foreign-catalyst-free GaSb nanowire-based devices with mature semiconductor technology.
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Affiliation(s)
- Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Yip S, Shen L, Ho JC. Recent advances in III-Sb nanowires: from synthesis to applications. NANOTECHNOLOGY 2019; 30:202003. [PMID: 30625448 DOI: 10.1088/1361-6528/aafcce] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The excellent properties of III-V semiconductors make them intriguing candidates for next-generation electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.
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Affiliation(s)
- SenPo Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong Special Administrative Region of China, People's Republic of China. Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, People's Republic of China
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