Electronic Properties of Armchair Black Phosphorene Nanoribbons Edge-Modified by Transition Elements V, Cr, and Mn

Self-passivated edges of ZnO nanoribbons: a global search

The edge structure of two-dimensional (2D) materials plays a critical role in controlling their growth kinetics and morphological evolution, electronic structures and functionalities. However, until now, the accurate edge reconstruction of ZnO nanoribbons remains absent. Here, we present results of a global search of ZnO edge structures having used the CALYPSO program combined with the density functional theory (DFT) method. In addition to a database of all the possible edge reconstructed structures of ZnO nanoribbons, the most stable edge reconstructed structures of armchair (ZnO_AC), O-enriched zigzag (O_ZZ) and Zn-enriched zigzag edges (Zn_ZZ) have been confirmed based on molecular dynamics (MD) simulation and bonding configuration analysis of atoms near the edges. The edge formation energies show that their stabilities depend on the chemical potential (μ_O) and the concentrations (ρ_O) of oxygen atoms. Interestingly, a highly stable Zn_ZZ edge exhibits a novel nanotube-like structure and metallic characteristics, while the most stable reconstructed O_ZZ edge, resembling the letter "T", exhibits a narrow direct band-gap. It is almost certain that their electronic properties are determined by the edge states.

Electric-Field Control in Phosphorene-Based Heterostructures

Phosphorene is a graphene-like material with an intermediate band gap, in contrast to zero-gap graphene and large-gap dichalcogenides or hexagonal boron nitride (hBN), which makes it more suitable for nanoelectronic devices. However, inducing band-gap modulation in freestanding phosphorene nanoribbons (PNRs) is problematic, as high in-plane electric fields are necessary to close the gap. We perform here a detailed investigation concerning the substrate influence on the electric-field control exerted by an external gate, using the density functional theory-non-equilibrium Green's functions (DFT-NEGF) framework. It is established that the interaction with a hexagonal boron nitride supporting layer significantly enhances the gap modulation. Furthermore, we address the issue of contacting the PNRs, by using conducting graphene nanoribbons embedded in the support hBN layer. Within this setup, a measurable spin polarization is achieved owing to the anti-ferromagnetic coupling between the edges of the graphene nanoribbons.

Self-passivation leads to semiconducting edges of black phosphorene

The edges of black phosphorene (BP) have been extensively explored. The previous experimental observations that all the BP edges are semiconducting implies that the as-cut edges of BP tend to be reconstructed. Here we present a global structural search of three typical BP edges, namely armchair, zigzag and zigzag-1 edges. It is found that all the three pristine edges are metastable, and all of them can be quickly self-passivated by (i) forming P[double bond, length as m-dash]P double bonds (one σ and one π bond), (ii) reconstructing new polygonal rings will all P atoms bonded with three sp³ bonds or (iii) forming a special P(2)-P(4) configuration with a two-coordinated P atom accommodating two lone pair electrons and one four-coordinated P atom without lone pair electrons. Highly different from the pristine edges, all these highly stable reconstructed edges are semiconducting. This study showed that the reconstruction of the edges of a 2D material, just like the surfaces of a 3D crystal, must be considered for both fundamental studies and practical applications. Besides BP, this study also sheds light on the structures and properties of the edges of many other 2D materials.