|
1
|
Li J, Li B, Meng M, Sun L, Jiang M. Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction. OPTICS EXPRESS 2022; 30:24773-24787. [PMID: 36237023 DOI: 10.1364/oe.459837] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Accepted: 06/15/2022] [Indexed: 06/16/2023]
Abstract
Interface engineering in the fabrication of low-dimensional optoelectronic devices has been highlighted in recent decades to enhance device characteristics such as reducing leakage current, optimizing charge transport, and modulating the energy-band structure. In this paper, we report a dielectric interface approach to realize one-dimensional (1D) wire near-infrared light-emitting devices with high brightness and enhanced emission efficiency. The light-emitting diode is composed of a zinc oxide microwire covered by a silver nanolayer (Ag@ZnO MW), magnesium oxide (MgO) buffer layer, and p-type gallium arsenide (GaAs) substrate. In the device structure, the insertion of a MgO dielectric layer in the n-ZnO MW/p-GaAs heterojunction can be used to modulate the device features, such as changing the charge transport properties, reducing the leakage current and engineering the band alignment. Furthermore, the cladding of the Ag nanolayer on the ZnO MW can optimize the junction interface quality, thus reducing the turn-on voltage and increasing the current injection and electroluminescence (EL) efficiency. The combination of MgO buffer layer and Ag nanolayer cladding can be utilized to achieve modulating the carrier recombination path, interfacial engineering of heterojunction with optimized band alignment and electronic structure in these carefully designed emission devices. Besides, the enhanced near-infrared EL and improved physical contact were also obtained. The study of current transport modulation and energy-band engineering proposes an original and efficient route for improving the device performances of 1D wire-type heterojunction light sources.
Collapse
|
|
2
|
Liang H, Yao R, Zhang G, Zhang X, Liang Z, Yang Y, Ning H, Zhong J, Qiu T, Peng J. A Strategy toward Realizing Narrow Line with High Electrical Conductivity by Electrohydrodynamic Printing. MEMBRANES 2022; 12:membranes12020141. [PMID: 35207062 PMCID: PMC8879046 DOI: 10.3390/membranes12020141] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Revised: 01/13/2022] [Accepted: 01/17/2022] [Indexed: 02/04/2023]
Abstract
Over the past few decades, electrohydrodynamic (EHD) printing has proved to be an environmentally friendly, cost-effective and powerful tool in manufacturing electronic devices with a wire width of less than 50 μm. In particular, EHD printing is highly valued for the printing of ultrafine wire-width silver electrodes, which is important in manufacturing large-area, high-resolution micron-scale or even nanoscale structures. In this paper, we compare two methods of surface modification of glass substrate: UV treatment and oxygen plasma treatment. We found that oxygen plasma was better than UV treatment in terms of wettability and uniformity. Secondly, we optimized the annealing temperature parameter, and found that the conductivity of the electrode was the highest at 200 °C due to the smoothing silver electrode and the oxidation-free internal microstructure. Thirdly, we used EHD printing to fabricate silver electrodes on the glass substrate. Due to the decrease of conductivity as a result of the skin effect and the decrease of silver content, we found that driving voltage dropped, line width decreased, and the conductivity of silver line decreased. After the optimization of the EHD printing process, Ag electrode line width and conductivity reached 19.42 ± 0.24 μm and 6.01 × 106 S/m, demonstrating the potential of electro-hydraulic printing in the manufacturing of flexible, wearable, high-density, low-power-consumption electronics.
Collapse
Affiliation(s)
- Hongfu Liang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Rihui Yao
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Guanguang Zhang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Xu Zhang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Zhihao Liang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Yuexin Yang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Honglong Ning
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
- Correspondence: (H.N.); (T.Q.); Tel.: +86-20-8711-4525 (H.N.)
| | - Jinyao Zhong
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Tian Qiu
- Department of Intelligent Manufacturing, Wuyi University, Jiangmen 529020, China
- Correspondence: (H.N.); (T.Q.); Tel.: +86-20-8711-4525 (H.N.)
| | - Junbiao Peng
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| |
Collapse
|
|
3
|
Hou B, Li L, Li X, Li Q, Li J, Wang H, Wang Q, Gu Y, Kim BH, Huang J. Influence of Bi3+ doping on microstructure and photoelectric properties of ZnO thin film. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2020.138174] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
|
|
4
|
Zhu X, Lin F, Chen X, Zhang Z, Chen X, Wang D, Tang J, Fang X, Fang D, Liao L, Wei Z. Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector. NANOTECHNOLOGY 2020; 31:444001. [PMID: 32585644 DOI: 10.1088/1361-6528/aba02c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In semiconductor nanowire (NW) photodetectors, the Schottky barrier formed by the contact between metal and semiconductor can act as a depletion layer. For NW structures with a smaller diameter, the depletion region is especially important to the carrier transport. We prepared a GaAs/AlGaAs quantum well NW photodetector with a two-dimensional electron-hole tube, in which the two-dimensional hole tube (2DHT) formed by the inner layer of GaAs and AlGaAs has the most important role in the regulation of carriers. By adjusting the bias voltage to vary the depth of the depletion region, we have confirmed the influence of the depletion region in a 2DHT. A significant inflection point was found in the responsivity-voltage curve at 1.5 V. By combining the depletion region and 2DHT, the responsivity of the fabricated device was increased by 18 times to 0.199 A W-1 and the detectivity is increased by 5 times to 5.8 × 1010 Jones, compared to the pure GaAs NW photodetector. Reasonable combination of depletion layer and 2DHT was proved to promote high-performance NW photodetector.
Collapse
Affiliation(s)
- Xiaotian Zhu
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, People's Republic of China
| | | | | | | | | | | | | | | | | | | | | |
Collapse
|