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Jeong SG, Cho SW, Song S, Oh JY, Jeong DG, Han G, Jeong HY, Mohamed AY, Noh WS, Park S, Lee JS, Lee S, Kim YM, Cho DY, Choi WS. Dimensionality Engineering of Magnetic Anisotropy from the Anomalous Hall Effect in Synthetic SrRuO 3 Crystals. NANO LETTERS 2024; 24:7979-7986. [PMID: 38829309 DOI: 10.1021/acs.nanolett.4c01536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here we investigate the impact of dimensionality of epitaxially grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1500% improvement of the coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications.
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Affiliation(s)
- Seung Gyo Jeong
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
| | - Seong Won Cho
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Sehwan Song
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jin Young Oh
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
| | - Do Gyeom Jeong
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Gyeongtak Han
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | | | - Woo-Suk Noh
- cCPM, Max Planck POSTECH/Korea Research Initiative, Pohang 37673, Korea
| | - Sungkyun Park
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Suyoun Lee
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
| | - Deok-Yong Cho
- Department of Physics, Jeonbuk National University, Jeonju 54896, Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
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2
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San Gabriel ML, Qiu C, Yu D, Yaguchi T, Howe JY. Simultaneous secondary electron microscopy in the scanning transmission electron microscope with applications for in situ studies. Microscopy (Oxf) 2024; 73:169-183. [PMID: 38334743 DOI: 10.1093/jmicro/dfae007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 12/09/2023] [Accepted: 02/05/2024] [Indexed: 02/10/2024] Open
Abstract
Scanning/transmission electron microscopy (STEM) is a powerful characterization tool for a wide range of materials. Over the years, STEMs have been extensively used for in situ studies of structural evolution and dynamic processes. A limited number of STEM instruments are equipped with a secondary electron (SE) detector in addition to the conventional transmitted electron detectors, i.e. the bright-field (BF) and annular dark-field (ADF) detectors. Such instruments are capable of simultaneous BF-STEM, ADF-STEM and SE-STEM imaging. These methods can reveal the 'bulk' information from BF and ADF signals and the surface information from SE signals for materials <200 nm thick. This review first summarizes the field of in situ STEM research, followed by the generation of SE signals, SE-STEM instrumentation and applications of SE-STEM analysis. Combining with various in situ heating, gas reaction and mechanical testing stages based on microelectromechanical systems (MEMS), we show that simultaneous SE-STEM imaging has found applications in studying the dynamics and transient phenomena of surface reconstructions, exsolution of catalysts, lunar and planetary materials and mechanical properties of 2D thin films. Finally, we provide an outlook on the potential advancements in SE-STEM from the perspective of sample-related factors, instrument-related factors and data acquisition and processing.
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Affiliation(s)
- Mia L San Gabriel
- Department of Materials Science and Engineering, University of Toronto, 184 College St, Toronto, ON M5S 3E4,Canada
| | - Chenyue Qiu
- Department of Materials Science and Engineering, University of Toronto, 184 College St, Toronto, ON M5S 3E4,Canada
| | - Dian Yu
- Department of Materials Science and Engineering, University of Toronto, 184 College St, Toronto, ON M5S 3E4,Canada
| | - Toshie Yaguchi
- Electron Microscope Systems Design Department, Hitachi High-Tech Corporation, 552-53 shinko-cho, Hitachinaka-shi, Ibaraki-ken 312-8504, Japan
| | - Jane Y Howe
- Department of Materials Science and Engineering, University of Toronto, 184 College St, Toronto, ON M5S 3E4,Canada
- Department of Chemical Engineering, University of Toronto, 200 College St, Toronto, ON M5T 3E5, Canada
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3
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Tsurusawa H, Uzuhashi J, Kozuka Y, Kimoto K, Ohkubo T. Robust Preparation of Sub-20-nm-Thin Lamellae for Aberration-Corrected Electron Microscopy. SMALL METHODS 2024:e2301425. [PMID: 38389181 DOI: 10.1002/smtd.202301425] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 01/24/2024] [Indexed: 02/24/2024]
Abstract
Aberration-corrected scanning transmission electron microscopy (STEM) has been advancing resolution, sensitivity, and microanalysis due to the intense demands of atomic-level microstructural investigations. Recent STEM technologies require preparing a thin lamella whose thickness is ideally below 20 nm. Although focused-ion-beam/scanning-electron-microscopy (FIB/SEM) is an established method to prepare a high-quality lamella, nanometer-level controllability of lamella thickness remains a fundamental problem. Here, the robust preparation of a sub-20-nm-thin lamella is demonstrated by FIB/SEM with real-time feedback from thickness quantification. The lamella thickness is quantified by back-scattered-electron SEM imaging in a thickness range between 0 and 100 nm without any reference to numerical simulation. Using real-time feedback from the thickness quantification, the FIB/SEM terminates thinning a lamella at a targeted thickness. The real-time feedback system eventually provides 1-nm-level controllability of the lamella thickness. As a proof-of-concept, a near-10-nm-thin lamella is prepared from a SrTiO3 crystal by our methodology. Moreover, the lamella thickness is controllable at a target heterointerface. Thus, a sub-20-nm-thin lamella is prepared from a LaAlO3 /SrTiO3 heterointerface. The methodology offers a robust and operator-independent platform to prepare a sub-20-nm-thin lamella from various materials. This platform will broadly impact aberration-corrected STEM studies in materials science and the semiconductor industry.
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Affiliation(s)
- Hideyo Tsurusawa
- LQUOM Inc., 79-5, Tokiwadai, Hodogaya, Yokohama, 240-8501, Japan
| | - Jun Uzuhashi
- National Institute for Materials Science (NIMS), Research Center for Magnetic and Spintronic Materials, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
| | - Yusuke Kozuka
- National Institute for Materials Science (NIMS), Research Center for Materials Nanoarchitectonics (MANA), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Koji Kimoto
- National Institute for Materials Science (NIMS), Center for Basic Research on Materials, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
| | - Tadakatsu Ohkubo
- National Institute for Materials Science (NIMS), Research Center for Magnetic and Spintronic Materials, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
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4
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Kučera J, Lofaj F, Nagyová-Krchova Z, Šurín Hudáková N, Vojtko M, Březina V. Stimulation of Osteogenic Activity of Autologous Teeth Hard Tissues as Bone Augmentation Material. BIOLOGY 2024; 13:40. [PMID: 38248471 PMCID: PMC10813725 DOI: 10.3390/biology13010040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 01/08/2024] [Accepted: 01/08/2024] [Indexed: 01/23/2024]
Abstract
The issue of bone volume loss is playing an increasing role in bone tissue engineering. Research has focused on studying the preparation and use of different types of human or xenogenic materials and their osteogenic properties. An alternative source for this purpose could be autologous extracted teeth. The simple preparation protocol, minimal immune response, and rapid organizing of the newly formed bone with optimal mechanical properties predispose autologous hard teeth tissues (HTTs) as a promising material suitable in the indication of augmentation of maxillary and mandible defects, comparable to other high-end augmentation materials. The aim of this study was to experimentally evaluate the osteogenic potential of ground native autologous HTTs prepared by different demineralization procedures, aimed at potentiating the osteoinductive and osteoconductive properties of their organic components. The results indicate that the most effective preparation process for HTT stimulation is the application of Cleanser for 10 min followed by exposure to 0.6 N HCl for 5 min with a wash in phosphate-buffered saline solution.
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Affiliation(s)
- Jan Kučera
- Department of Dentistry and Maxillofacial Surgery, Faculty of Medicine, Pavol Jozef Safarik University in Kosice, Tr. SNP 1, 040 01 Kosice, Slovakia
| | - František Lofaj
- Institute of Materials Research, Slovak Academy of Sciences, ÚMV SAV Košice, 040 01 Kosice, Slovakia; (F.L.); (M.V.)
| | - Zuzana Nagyová-Krchova
- Department of Stomatology and Maxillofacial Surgery, Faculty of Medicine, Pavol Jozef Safarik University in Kosice, Tr. SNP 1, 040 11 Kosice, Slovakia;
| | - Natália Šurín Hudáková
- Department of Microbiology and Immunology, University of Veterinary Medicine and Pharmacy in Kosice, Komenskeho 73, 041 81 Kosice, Slovakia;
| | - Marek Vojtko
- Institute of Materials Research, Slovak Academy of Sciences, ÚMV SAV Košice, 040 01 Kosice, Slovakia; (F.L.); (M.V.)
| | - Vitěslav Březina
- Department of Stomatology, Faculty of Medicine, Masaryk University, Kamenice 5, 625 00 Brno, Czech Republic;
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Cho H, Sritharan M, Ju Y, Pujar P, Dutta R, Jang WS, Kim YM, Hong S, Yoon Y, Kim S. Se-Vacancy Healing with Substitutional Oxygen in WSe 2 for High-Mobility p-Type Field-Effect Transistors. ACS NANO 2023. [PMID: 37125893 DOI: 10.1021/acsnano.2c11567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Transition-metal dichalcogenides possess high carrier mobility and can be scaled to sub-nanometer dimensions, making them viable alternative to Si electronics. WSe2 is capable of hole and electron carrier transport, making it a key component in CMOS logic circuits. However, since the p-type electrical performance of the WSe2-field effect transistor (FET) is still limited, various approaches are being investigated to circumvent this issue. Here, we formed a heterostructural multilayer WSe2 channel and solution-processed aluminum-doped zinc oxide (AZO) for compositional modification of WSe2 to obtain a device with excellent electrical properties. Supplying oxygen anions from AZO to the WSe2 channel eliminated subgap states through Se-deficiency healing, resulting in improved transport capacity. Se vacancies are known to cause mobility degradation due to scattering, which is mitigated through ionic compensation. Consequently, the hole mobility can reach high values, with a maximum of approximately 100 cm2/V s. Further, the transport behavior of the oxygen-doped WSe2-FET is systematically analyzed using density functional theory simulations and photoexcited charge collection spectroscopy measurements.
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Affiliation(s)
- Haewon Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
| | - Mayuri Sritharan
- Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Younghyun Ju
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
| | - Pavan Pujar
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
- Department of Ceramic Engineering, Indian Institute of Technology (IIT-BHU), Varanasi, Uttar Pradesh 221005, India
| | - Riya Dutta
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
| | - Woo-Sung Jang
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Seongin Hong
- Department of Physics, Gachon University, Seongnam 13120, Republic of Korea
| | - Youngki Yoon
- Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Sunkook Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
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6
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Su Y, Xu F, Zhang X, Qiu Y, Wang H. Rational Design of High-Performance PEO/Ceramic Composite Solid Electrolytes for Lithium Metal Batteries. NANO-MICRO LETTERS 2023; 15:82. [PMID: 37002362 PMCID: PMC10066058 DOI: 10.1007/s40820-023-01055-z] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/25/2022] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
Composite solid electrolytes (CSEs) with poly(ethylene oxide) (PEO) have become fairly prevalent for fabricating high-performance solid-state lithium metal batteries due to their high Li+ solvating capability, flexible processability and low cost. However, unsatisfactory room-temperature ionic conductivity, weak interfacial compatibility and uncontrollable Li dendrite growth seriously hinder their progress. Enormous efforts have been devoted to combining PEO with ceramics either as fillers or major matrix with the rational design of two-phase architecture, spatial distribution and content, which is anticipated to hold the key to increasing ionic conductivity and resolving interfacial compatibility within CSEs and between CSEs/electrodes. Unfortunately, a comprehensive review exclusively discussing the design, preparation and application of PEO/ceramic-based CSEs is largely lacking, in spite of tremendous reviews dealing with a broad spectrum of polymers and ceramics. Consequently, this review targets recent advances in PEO/ceramic-based CSEs, starting with a brief introduction, followed by their ionic conduction mechanism, preparation methods, and then an emphasis on resolving ionic conductivity and interfacial compatibility. Afterward, their applications in solid-state lithium metal batteries with transition metal oxides and sulfur cathodes are summarized. Finally, a summary and outlook on existing challenges and future research directions are proposed.
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Affiliation(s)
- Yanxia Su
- State Key Laboratory of Solidification Processing, Centre for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, People's Republic of China
| | - Fei Xu
- State Key Laboratory of Solidification Processing, Centre for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, People's Republic of China.
| | - Xinren Zhang
- State Key Laboratory of Solidification Processing, Centre for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, People's Republic of China
| | - Yuqian Qiu
- State Key Laboratory of Solidification Processing, Centre for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, People's Republic of China
| | - Hongqiang Wang
- State Key Laboratory of Solidification Processing, Centre for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, People's Republic of China.
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7
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Kang S, Jang WS, Morozovska AN, Kwon O, Jin Y, Kim YH, Bae H, Wang C, Yang SH, Belianinov A, Randolph S, Eliseev EA, Collins L, Park Y, Jo S, Jung MH, Go KJ, Cho HW, Choi SY, Jang JH, Kim S, Jeong HY, Lee J, Ovchinnikova OS, Heo J, Kalinin SV, Kim YM, Kim Y. Highly enhanced ferroelectricity in HfO 2-based ferroelectric thin film by light ion bombardment. Science 2022; 376:731-738. [PMID: 35549417 DOI: 10.1126/science.abk3195] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO2)-based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion-induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.
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Affiliation(s)
- Seunghun Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Woo-Sung Jang
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Anna N Morozovska
- Institute of Physics, National Academy of Sciences of Ukraine, 46, Prospekt. Nauky, 03028 Kyiv, Ukraine
| | - Owoong Kwon
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Yeongrok Jin
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Young-Hoon Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hagyoul Bae
- Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea
| | - Chenxi Wang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sang-Hyeok Yang
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Alex Belianinov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.,Sandia National Laboratories, Albuquerque, NM 87123, USA
| | - Steven Randolph
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Eugene A Eliseev
- Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Krjijanovskogo 3, 03142 Kyiv, Ukraine
| | - Liam Collins
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Yeehyun Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sanghyun Jo
- Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Kyoung-June Go
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Hae Won Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jae Hyuck Jang
- Center for Scientific Instrumentation, Korea Basic Science Institute (KBSI), Daejeon 34133, Republic of Korea
| | - Sunkook Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Olga S Ovchinnikova
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Jinseong Heo
- Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea
| | - Sergei V Kalinin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.,Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37920, USA
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Yunseok Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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8
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Zhang Y, Qu W, Peng G, Zhang C, Liu Z, Liu J, Li S, Wu H, Meng L, Gao L. Seeing Structural Mechanisms of Optimized Piezoelectric and Thermoelectric Bulk Materials through Structural Defect Engineering. MATERIALS 2022; 15:ma15020487. [PMID: 35057205 PMCID: PMC8780573 DOI: 10.3390/ma15020487] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2021] [Revised: 12/28/2021] [Accepted: 01/05/2022] [Indexed: 02/04/2023]
Abstract
Aberration-corrected scanning transmission electron microscopy (AC-STEM) has evolved into the most powerful characterization and manufacturing platform for all materials, especially functional materials with complex structural characteristics that respond dynamically to external fields. It has become possible to directly observe and tune all kinds of defects, including those at the crucial atomic scale. In-depth understanding and technically tailoring structural defects will be of great significance for revealing the structure-performance relation of existing high-property materials, as well as for foreseeing paths to the design of high-performance materials. Insights would be gained from piezoelectrics and thermoelectrics, two representative functional materials. A general strategy is highlighted for optimizing these functional materials’ properties, namely defect engineering at the atomic scale.
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Affiliation(s)
- Yang Zhang
- Instrumental Analysis Center of Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China; (L.M.); (L.G.)
- Correspondence:
| | - Wanbo Qu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Guyang Peng
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Chenglong Zhang
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Ziyu Liu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Juncheng Liu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Shurong Li
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Haijun Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Lingjie Meng
- Instrumental Analysis Center of Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China; (L.M.); (L.G.)
| | - Lumei Gao
- Instrumental Analysis Center of Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China; (L.M.); (L.G.)
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9
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Malkin AY, Gumennyi IV, Aliev AD, Chalykh AE, Kulichikhin VG. Molecular motion in mixtures of polymer melts in a capillary flow. J Mol Liq 2021. [DOI: 10.1016/j.molliq.2021.117919] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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10
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Tsurusawa H, Nakanishi N, Kawano K, Chen Y, Dutka M, Van Leer B, Mizoguchi T. Robotic fabrication of high-quality lamellae for aberration-corrected transmission electron microscopy. Sci Rep 2021; 11:21599. [PMID: 34732755 PMCID: PMC8566590 DOI: 10.1038/s41598-021-00595-x] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2021] [Accepted: 10/14/2021] [Indexed: 11/09/2022] Open
Abstract
Aberration-corrected scanning transmission electron microscopy (STEM) is widely used for atomic-level imaging of materials but severely requires damage-free and thin samples (lamellae). So far, the preparation of the high-quality lamella from a bulk largely depends on manual processes by a skilled operator. This limits the throughput and repeatability of aberration-corrected STEM experiments. Here, inspired by the recent successes of "robot scientists", we demonstrate robotic fabrication of high-quality lamellae by focused-ion-beam (FIB) with automation software. First, we show that the robotic FIB can prepare lamellae with a high success rate, where the FIB system automatically controls rough-milling, lift-out, and final-thinning processes. Then, we systematically optimized the FIB parameters of the final-thinning process for single crystal Si. The optimized Si lamellae were evaluated by aberration-corrected STEM, showing atomic-level images with 55 pm resolution and quantitative repeatability of the spatial resolution and lamella thickness. We also demonstrate robotic fabrication of high-quality lamellae of SrTiO3 and sapphire, suggesting that the robotic FIB system may be applicable for a wide range of materials. The throughput of the robotic fabrication was typically an hour per lamella. Our robotic FIB will pave the way for the operator-free, high-throughput, and repeatable fabrication of the high-quality lamellae for aberration-corrected STEM.
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Affiliation(s)
- Hideyo Tsurusawa
- Thermo Fisher Scientific, FEI Japan Ltd., 4-12-2, Higashi-Shinagawa, Shinagawa-ku, Tokyo, 140-0002, Japan.
| | - Nobuto Nakanishi
- Thermo Fisher Scientific, FEI Japan Ltd., 4-12-2, Higashi-Shinagawa, Shinagawa-ku, Tokyo, 140-0002, Japan
| | - Kayoko Kawano
- Thermo Fisher Scientific, FEI Japan Ltd., 4-12-2, Higashi-Shinagawa, Shinagawa-ku, Tokyo, 140-0002, Japan
| | - Yiqiang Chen
- Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG, Eindhoven, The Netherlands
| | - Mikhail Dutka
- Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG, Eindhoven, The Netherlands
| | - Brandon Van Leer
- Thermo Fisher Scientific, 5350 NE Dawson Creek Drive, Hillsboro, OR, 97124, USA
| | - Teruyasu Mizoguchi
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan.
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11
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Ghimire G, Dhakal KP, Choi W, Esthete YA, Kim SJ, Tran TT, Lee H, Yang H, Duong DL, Kim YM, Kim J. Doping-Mediated Lattice Engineering of Monolayer ReS 2 for Modulating In-Plane Anisotropy of Optical and Transport Properties. ACS NANO 2021; 15:13770-13780. [PMID: 34296605 DOI: 10.1021/acsnano.1c05316] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
ReS2 exhibits strong anisotropic optical and electrical responses originating from the asymmetric lattice. Here, we show that the anisotropy of monolayer (1L) ReS2 in optical scattering and electrical transport can be practically erased by lattice engineering via lithium (Li) treatment. Scanning transmission electron microscopy revealed that significant strain is induced in the lattice of Li-treated 1L-ReS2, due to high-density electron doping and the resultant formation of continuous tiling of nanodomains with randomly rotating orientations of 60°, which produced a nearly isotropic response of polarized Raman scattering and absorption of Li-treated 1L-ReS2. With Li treatment, the in-plane conductance of 1L-ReS2 increased by an order of magnitude, and its angle dependence became negligible. Our result that the asymmetric phase was converted into the isotropic phase by electron injection could significantly expand the optoelectronic applications of polymorphic two-dimensional transition metal dichalcogenides.
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Affiliation(s)
- Ganesh Ghimire
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Krishna P Dhakal
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Wooseon Choi
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yonas Assefa Esthete
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seon Je Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Trang Thu Tran
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyoyoung Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Suwon 16419, Republic of Korea
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Heejun Yang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Dinh Loc Duong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Suwon 16419, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Suwon 16419, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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12
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Yang S, Choi W, Cho BW, Agyapong‐Fordjour FO, Park S, Yun SJ, Kim H, Han Y, Lee YH, Kim KK, Kim Y. Deep Learning-Assisted Quantification of Atomic Dopants and Defects in 2D Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2101099. [PMID: 34081415 PMCID: PMC8373156 DOI: 10.1002/advs.202101099] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2021] [Revised: 04/10/2021] [Indexed: 05/16/2023]
Abstract
Atomic dopants and defects play a crucial role in creating new functionalities in 2D transition metal dichalcogenides (2D TMDs). Therefore, atomic-scale identification and their quantification warrant precise engineering that widens their application to many fields, ranging from development of optoelectronic devices to magnetic semiconductors. Scanning transmission electron microscopy with a sub-Å probe has provided a facile way to observe local dopants and defects in 2D TMDs. However, manual data analytics of experimental images is a time-consuming task, and often requires subjective decisions to interpret observed signals. Therefore, an approach is required to automate the detection and classification of dopants and defects. In this study, based on a deep learning algorithm, fully convolutional neural network that shows a superior ability of image segmentation, an efficient and automated method for reliable quantification of dopants and defects in TMDs is proposed with single-atom precision. The approach demonstrates that atomic dopants and defects are precisely mapped with a detection limit of ≈1 × 1012 cm-2 , and with a measurement accuracy of ≈98% for most atomic sites. Furthermore, this methodology is applicable to large volume of image data to extract atomic site-specific information, thus providing insights into the formation mechanisms of various defects under stimuli.
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Affiliation(s)
- Sang‐Hyeok Yang
- Department of Energy ScienceSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Wooseon Choi
- Department of Energy ScienceSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Byeong Wook Cho
- Department of Energy ScienceSungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Center for Integrated Nanostructure PhysicsInstitute for Basic Science (IBS)Suwon16419Republic of Korea
| | | | - Sehwan Park
- Department of Energy ScienceSungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Center for Integrated Nanostructure PhysicsInstitute for Basic Science (IBS)Suwon16419Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure PhysicsInstitute for Basic Science (IBS)Suwon16419Republic of Korea
| | - Hyung‐Jin Kim
- Department of Energy and Materials EngineeringDongguk UniversitySeoul04620Republic of Korea
| | - Young‐Kyu Han
- Department of Energy and Materials EngineeringDongguk UniversitySeoul04620Republic of Korea
| | - Young Hee Lee
- Department of Energy ScienceSungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Center for Integrated Nanostructure PhysicsInstitute for Basic Science (IBS)Suwon16419Republic of Korea
| | - Ki Kang Kim
- Department of Energy ScienceSungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Center for Integrated Nanostructure PhysicsInstitute for Basic Science (IBS)Suwon16419Republic of Korea
| | - Young‐Min Kim
- Department of Energy ScienceSungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Center for Integrated Nanostructure PhysicsInstitute for Basic Science (IBS)Suwon16419Republic of Korea
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13
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Common Phase and Structure Misidentifications in High-Resolution TEM Characterization of Perovskite Materials. CONDENSED MATTER 2020. [DOI: 10.3390/condmat6010001] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
High-resolution TEM (HRTEM) is a powerful tool for structure characterization. However, methylammonium lead iodide (MAPbI3) perovskite is highly sensitive to electron beams and easily decomposes into lead iodide (PbI2). Misidentifications, such as PbI2 being incorrectly labeled as perovskite, are widely present in HRTEM characterization and would negatively affect the development of perovskite research field. Here misidentifications in MAPbI3 perovskite are summarized, classified, and corrected based on low-dose imaging and electron diffraction (ED) simulations. Corresponding crystallographic parameters of intrinsic tetragonal MAPbI3 and the confusable hexagonal PbI2 are presented unambiguously. Finally, the method of proper phase identification and some strategies to control the radiation damage in HRTEM are provided. This warning paves the way to avoid future misinterpretations in HRTEM characterization of perovskite and other electron beam-sensitive materials.
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14
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Kwon JH, Jang S, Kim HJ, Joo BS, Yu KN, Choi E, Han M, Park JH, Chang YJ. Microscopic and chemical analysis of room temperature UV laser annealing of solution-based zinc-tin-oxide thin films. J Anal Sci Technol 2020. [DOI: 10.1186/s40543-020-00216-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
Abstract
AbstractAs a promising transparent semiconducting oxide (TSO) candidate, zinc-tin-oxide (ZTO) thin films were fabricated by combining solution coating and ultraviolet (UV) laser annealing. Instead of external heating, an intense UV laser was applied to transform sol-gel coatings via surface heating and photoexcited dissociation into oxide films. The laser-induced phase transformation was extensively investigated with synchrotron-based X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and electron energy loss spectroscopy (EELS). The chemical states and microscopic distributions of oxygen, zinc, and tin were significantly modified during the laser irradiation. Relative oxidation and surface migration between zinc and tin gradually evolved toward a combination of ZnO1−x host and SnO2−y grains. Our results present deeper insight into the use of UV laser annealing for developing a room temperature (RT) fabrication method of TSO thin films and other relevant solution coatings.
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15
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Zhang C, Feng Y, Han Z, Gao S, Wang M, Wang P. Electrochemical and Structural Analysis in All-Solid-State Lithium Batteries by Analytical Electron Microscopy: Progress and Perspectives. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903747. [PMID: 31660670 DOI: 10.1002/adma.201903747] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2019] [Revised: 09/14/2019] [Indexed: 06/10/2023]
Abstract
Advanced scanning transmission electron microscopy (STEM) and its associated instruments have made significant contributions to the characterization of all-solid-state (ASS) Li batteries, as these tools provide localized information on the structure, morphology, chemistry, and electronic state of electrodes, electrolytes, and their interfaces at the nano- and atomic scale. Furthermore, the rapid development of in situ techniques has enabled a deep understanding of interfacial dynamic behavior and heterogeneous characteristics during the cycling process. However, due to the beam-sensitive nature of light elements in the interphases, e.g., Li and O, thorough and reliable studies of the interfacial structure and chemistry at an ultrahigh spatial resolution without beam damage is still a formidable challenge. Herein, the following points are discussed: (1) the recent contributions of advanced STEM to the study of ASS Li batteries; (2) current challenges associated with using this method; and (3) potential opportunities for combining cryo-electron microscopy and the STEM phase contrast imaging techniques.
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Affiliation(s)
- Chunchen Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yuzhang Feng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhen Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Si Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Meiyu Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Peng Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
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16
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Shim JH, Kim YH, Yoon HS, Kim HA, Kim JS, Kim J, Cho NH, Kim YM, Lee S. Hierarchically Structured Core-Shell Design of a Lithium Transition-Metal Oxide Cathode Material for Excellent Electrochemical Performance. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4017-4027. [PMID: 30607937 DOI: 10.1021/acsami.8b19902] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Tuning geometrical parameters of lithium-mixed transition-metal oxide (LiTM) cathode materials is a promising strategy for resource-efficient design of high-performance Li-ion batteries. In this paper, we demonstrate that simple and facile geometrical tailoring of the secondary microstructure of LiTM cathode materials without complex chemical modification or heterostructure engineering can significantly improve overall electrochemical performance of the active cathode materials. An optimized LiTM with a bimodal size distribution of primary particles inside the secondary particles exhibits a 53.8% increase in capacity at a high discharge rate (10 C) compared to a commercially available reference and comparable rate capability after 100 charge/discharge cycles. The key concept of this approach is to maximize the beneficial effects arising from the controlled sizes of primary particles. Multimodal/multiscale microscopic characterizations based on electron tomography and scanning transmission electron microscopy, combined with electron energy-loss spectroscopy and energy-dispersive X-ray spectroscopy from the atomic level to the microscale level, were employed to elucidate structural origins of enhanced battery performance. This study paves the way for the resource-efficient microstructure design of LiTM cathode materials to maximize capacity and stability via simple adjustment of processing conditions, which is advantageous for mass-production applications.
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Affiliation(s)
- Jae-Hyun Shim
- Department of Advanced Materials and Energy Engineering , Dongshin University , Naju 58245 , Republic of Korea
| | - Young-Hoon Kim
- Department of Energy Science , Sungkyunkwan University (SKKU) , Suwon 16419 , Republic of Korea
| | - Han-Sol Yoon
- Department of Materials Science and Engineering , Inha University , Incheon 22212 , Republic of Korea
| | - Han-A Kim
- Department of Chemistry , Dong-A University , Busan 49315 , Republic of Korea
| | - Ji-Soo Kim
- Gumi Electronics and Information Technology Research Institute , Gumi 39171 , Republic of Korea
| | - Jongsik Kim
- Department of Chemistry , Dong-A University , Busan 49315 , Republic of Korea
| | - Nam-Hee Cho
- Department of Materials Science and Engineering , Inha University , Incheon 22212 , Republic of Korea
| | - Young-Min Kim
- Department of Energy Science , Sungkyunkwan University (SKKU) , Suwon 16419 , Republic of Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
| | - Sanghun Lee
- Department of Chemistry , Gachon University , Seongnam 13120 , Republic of Korea
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17
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Wu H, Zhao X, Guan C, Zhao LD, Wu J, Song D, Li C, Wang J, Loh KP, Venkatesan TV, Pennycook SJ. The Atomic Circus: Small Electron Beams Spotlight Advanced Materials Down to the Atomic Scale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1802402. [PMID: 30306651 DOI: 10.1002/adma.201802402] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2018] [Revised: 08/06/2018] [Indexed: 06/08/2023]
Abstract
Defects in crystalline materials have a tremendous impact on their functional behavior. Controlling and tuning of these imperfections can lead to marked improvements in their physical, electrical, magnetic, and optical properties. Thanks to the development of aberration-corrected (scanning) transmission electron microscopy (STEM/TEM), direct visualization of defects at multiple length scales has now become possible, including those critically important defects at the atomic scale. Thorough understanding of the nature and dynamics of these defects is the key to unraveling the fundamental origins of structure-property relationships. Such insight can therefore allow the creation of new materials with desired properties through appropriate defect engineering. Herein, several examples of new insights obtained from representative functional materials are shown, including piezoelectrics/ferroelectrics, oxide interfaces, thermoelectrics, electrocatalysts, and 2D materials.
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Affiliation(s)
- Haijun Wu
- Department of Materials Science and Engineering, National University of Singapore (NUS), Singapore, 117574, Singapore
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore (NUS), Singapore, 117574, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 13 Centre for Life Sciences, #05-01, 28 Medical Drive, Singapore, 117456, Singapore
| | - Cao Guan
- Department of Materials Science and Engineering, National University of Singapore (NUS), Singapore, 117574, Singapore
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Jiagang Wu
- Department of Materials Science, Sichuan University, Chengdu, 610064, China
| | - Dongsheng Song
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
| | - Changjian Li
- Department of Materials Science and Engineering, National University of Singapore (NUS), Singapore, 117574, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore (NUS), Singapore, 117574, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- Centre for Advanced 2D Materials (CA2DM), National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore
| | - Thirumalai V Venkatesan
- Department of Materials Science and Engineering, National University of Singapore (NUS), Singapore, 117574, Singapore
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
| | - Stephen J Pennycook
- Department of Materials Science and Engineering, National University of Singapore (NUS), Singapore, 117574, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 13 Centre for Life Sciences, #05-01, 28 Medical Drive, Singapore, 117456, Singapore
- Centre for Advanced 2D Materials (CA2DM), National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore
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