1
|
Liu H, Jia P, Su C, Zhao A, Liu J, Ren Q, Xiong J. High-Temperature Fiber-Optic Fabry-Perot Vibration Sensor Based on Single-Crystal Sapphire. SENSORS (BASEL, SWITZERLAND) 2023; 23:4952. [PMID: 37430867 DOI: 10.3390/s23104952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2023] [Revised: 05/16/2023] [Accepted: 05/17/2023] [Indexed: 07/12/2023]
Abstract
In this paper, a fiber-optic Fabry-Perot (F-P) vibration sensor that can work at 800 °C is proposed. The F-P interferometer is composed of an upper surface of inertial mass placed parallel to the end face of the optical fiber. The sensor was prepared by ultraviolet-laser ablation and three-layer direct-bonding technology. Theoretically, the sensor has a sensitivity of 0.883 nm/g and a resonant frequency of 20.911 kHz. The experimental results show that the sensitivity of the sensor is 0.876 nm/g in the range of 2 g to 20 g at an operating frequency of 200 Hz at 20 °C. The nonlinearity was evaluated from 20 °C to 800 °C with a nonlinear error of 0.87%. In addition, the z-axis sensitivity of the sensor was 25 times higher than that of the x-axis and y-axis. The vibration sensor will have wide high-temperature engineering-application prospects.
Collapse
Affiliation(s)
- Hua Liu
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China
| | - Pinggang Jia
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China
| | - Chengxin Su
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China
| | - Aihao Zhao
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China
| | - Jia Liu
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China
| | - Qianyu Ren
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China
| | - Jijun Xiong
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China
| |
Collapse
|
2
|
Chen YA, Chien KC, Chen IT, Chang CH. Sapphire nanophotonics: Fabrication challenges and optical properties. MICRO AND NANO ENGINEERING 2022. [DOI: 10.1016/j.mne.2022.100115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
|
3
|
Lin ZQ, Wang GG, Tian JL, Wang LY, Zhao DD, Liu Z, Han JC. Broad-band anti-reflective pore-like sub-wavelength surface nanostructures on sapphire for optical windows. NANOTECHNOLOGY 2018; 29:055302. [PMID: 29303115 DOI: 10.1088/1361-6528/aa9d14] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Compared with conventional anti-reflective film, an anti-reflective sub-wavelength surface structure provides an ideal choice for a sapphire optical window especially in harsh environments. However, it is still a challenge to obtain a sapphire anti-reflective surface microstructure because of its high hardness and chemical inertness. In this paper, combined with optical simulation, we proposed a facile method based on the anodic oxidation of aluminum film and following epitaxial annealing. Al thin film was deposited on a sapphire substrate by magnetron sputtering, and anodic oxidation was then performed to prepare surface pore-like structures on the Al film. Followed by two-step annealing, both the anodic oxidized coating and underlying unoxidized Al film were transformed totally into alumina. The parameters of anodic oxidation were analyzed to obtain the optimal pore-like structures for the antireflection in the mid-infrared and visible spectrum regions, respectively. Finally, the optimized surface sub-wavelength nanostructure on sapphire can increase the transmittance by 7% in the wavelength range of 3000-5000 nm and can increase 13.2% significantly for visible spectrum region, respectively. Meanwhile, the surface wettability can be also manipulated effectively. The preparation of surface pore-like sub-wavelength structure by the annealing of anodic oxidized aluminum film on sapphire is a feasible, economical and convenient approach and can find the applications for various optoelectronic fields.
Collapse
Affiliation(s)
- Zhao-Qing Lin
- Shenzhen Key Laboratory for Advanced Materials, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China
| | | | | | | | | | | | | |
Collapse
|
4
|
Chu Y, Kharel P, Renninger WH, Burkhart LD, Frunzio L, Rakich PT, Schoelkopf RJ. Quantum acoustics with superconducting qubits. Science 2017; 358:199-202. [PMID: 28935771 DOI: 10.1126/science.aao1511] [Citation(s) in RCA: 79] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2017] [Accepted: 09/05/2017] [Indexed: 11/02/2022]
Affiliation(s)
- Yiwen Chu
- Department of Applied Physics, Yale University, New Haven, CT 06511, USA.
- Yale Quantum Institute, Yale University, New Haven, CT 06520, USA
| | - Prashanta Kharel
- Department of Applied Physics, Yale University, New Haven, CT 06511, USA
- Yale Quantum Institute, Yale University, New Haven, CT 06520, USA
| | - William H Renninger
- Department of Applied Physics, Yale University, New Haven, CT 06511, USA
- Yale Quantum Institute, Yale University, New Haven, CT 06520, USA
| | - Luke D Burkhart
- Department of Applied Physics, Yale University, New Haven, CT 06511, USA
- Yale Quantum Institute, Yale University, New Haven, CT 06520, USA
| | - Luigi Frunzio
- Department of Applied Physics, Yale University, New Haven, CT 06511, USA
- Yale Quantum Institute, Yale University, New Haven, CT 06520, USA
| | - Peter T Rakich
- Department of Applied Physics, Yale University, New Haven, CT 06511, USA
- Yale Quantum Institute, Yale University, New Haven, CT 06520, USA
| | - Robert J Schoelkopf
- Department of Applied Physics, Yale University, New Haven, CT 06511, USA.
- Yale Quantum Institute, Yale University, New Haven, CT 06520, USA
| |
Collapse
|
5
|
Sabry YM, Khalil D, Saadany B, Bourouina T. In-Plane Optical Beam Collimation Using a Three-Dimensional Curved MEMS Mirror. MICROMACHINES 2017. [PMCID: PMC6189714 DOI: 10.3390/mi8050134] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The collimation of free-space light propagating in-plane with respect to the substrate is an important performance factor in optical microelectromechanical systems (MEMS). This is usually carried out by integrating micro lenses into the system, which increases the cost of fabrication/assembly in addition to limiting the wavelength working range of the system imposed by the dispersion characteristic of the lenses. In this work we demonstrate optical fiber light collimation using a silicon micromachined three-dimensional curved mirror. Sensitivity to micromachining and fiber alignment tolerance is shown to be low enough by restricting the ratio between the mirror focal length and the optical beam Rayleigh range below 5. The three-dimensional curvature of the mirror is designed to be astigmatic and controlled by a process combining deep, reactive ion etching and isotropic etching of silicon. The effect of the micromachining surface roughness on the collimated beam profile is investigated using a Fourier optics approach for different values of root-mean-squared (RMS) roughness and correlation length. The isotropic etching step of the structure is characterized and optimized for the optical-grade surface requirement. The experimental optical results show a beam-waist ratio of about 4.25 and a corresponding 12-dB improvement in diffraction loss, in good agreement with theory. This type of micromirror can be monolithically integrated into lensless microoptoelectromechanical systems (MOEMS), improving their performance in many different applications.
Collapse
Affiliation(s)
- Yasser M. Sabry
- Department of Electronics and Communication Engineering, Faculty of Engineering, Ain-Shams University, 1 Elsarayat St., Abbassia 11517, Egypt;
- Si-Ware Systems, 3 Khaled Ibn El-Waleed Street, Heliopolis, Cairo 11361, Egypt; (B.S.); (T.B.)
- Correspondence: ; Tel.: +20-100-183-4833
| | - Diaa Khalil
- Department of Electronics and Communication Engineering, Faculty of Engineering, Ain-Shams University, 1 Elsarayat St., Abbassia 11517, Egypt;
- Si-Ware Systems, 3 Khaled Ibn El-Waleed Street, Heliopolis, Cairo 11361, Egypt; (B.S.); (T.B.)
| | - Bassam Saadany
- Si-Ware Systems, 3 Khaled Ibn El-Waleed Street, Heliopolis, Cairo 11361, Egypt; (B.S.); (T.B.)
| | - Tarik Bourouina
- Si-Ware Systems, 3 Khaled Ibn El-Waleed Street, Heliopolis, Cairo 11361, Egypt; (B.S.); (T.B.)
- Paris-Est, Laboratoire ESYCOM, ESIEE Paris, Cité Descartes, F-93162 Noisy-le-Grand CEDEX, France
| |
Collapse
|
6
|
Hu H, Zhou S, Liu X, Gao Y, Gui C, Liu S. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes. Sci Rep 2017; 7:44627. [PMID: 28294166 PMCID: PMC5353678 DOI: 10.1038/srep44627] [Citation(s) in RCA: 78] [Impact Index Per Article: 11.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2017] [Accepted: 02/10/2017] [Indexed: 11/29/2022] Open
Abstract
We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.
Collapse
Affiliation(s)
- Hongpo Hu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China.,Quantum Wafer Inc., Foshan, 528251, China
| | - Shengjun Zhou
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China.,State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xingtong Liu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China
| | - Yilin Gao
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China
| | - Chengqun Gui
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China
| | - Sheng Liu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China
| |
Collapse
|
7
|
Weng YJ. Direct Imprinting Using Magnetic Nickel Mold and Electromagnetism Assisted Pressure for Replication of Microstructures. INT POLYM PROC 2013. [DOI: 10.3139/217.2423] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
Abstract
Abstract
This study proposes a simple technology using electromagnetism to control the direct hot imprint resist of a nickel mold. Combining the present gas-assisted hot imprint molding technology, electroforming technology, and self-designed heatable electromagnetic plate for even control and progressive pressuring technology, this study used electromagnetic nickel mold direct hot imprint to replicate microstructures, in order to make the molding technology and application of micro/nanoimprint more mature. This study first used gas-assisted hot embossing method to replicate structures on polycarbonate (PC), this PC film with microstructures is cast into nickel molds by electroforming. This nickel mold was used as the mold for magnetic embossing to imprint hot plastic polymethylmethacrylate (PMMA). The result showed that through gas-assisted hot embossing molding and electroforming, molds with high costs and complicated production processes can be massively replicated, and the replication precision is good. Through electroforming, the casting duration of magnetic nickel molds can be shortened and costs can be effectively lowered. Moreover, an electromagnetic plate was used to evenly control the direct hot pressure imprint resist, which is an advantage of the production process for micro structures.
Collapse
Affiliation(s)
- Y.-J. Weng
- Grace Laboratory for Polymer Processing, Department of Information Communications, Kainan University, Taoyuan, Taiwan, R.O.C
| |
Collapse
|
8
|
Oh TS, Jeong H, Lee YS, Park AH, Seo TH, Kim H, Lee KJ, Jeong MS, Suh EK. Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate. OPTICS EXPRESS 2011; 19:9385-9391. [PMID: 21643195 DOI: 10.1364/oe.19.009385] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
GaN-based light-emitting diode (LED) was fabricated on the sapphire substrate with monolithic convex microstructures (CMs) array. Using confocal scanning electroluminescence (EL), we have directly observed the strong outcoupling phenomenon of the light confined in a LED via the CMs array. This outcoupled light could be efficiently converged on the convex center through consecutive reflections at the flat area and the curved slant area of the CMs array. Compared to the conventional LED, the ray tracing simulation and far field EL results of the LED with a CM array showed efficient light extraction toward the top surface, i.e., 0-5, 40-45 and 60-65 degree by the outcoupling effect. We conclude that the outcoupled optical path via CMs is the dominant factor of the enhanced light extraction in the LED with a CM array.
Collapse
Affiliation(s)
- Tae Su Oh
- School of Semiconductor & Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, South Korea
| | | | | | | | | | | | | | | | | |
Collapse
|
9
|
Weng YJ, Yang SY. Applying magnetic soft mold imprint technology with ultraviolet light-emitting-diode array on the fabrication of microlens arrays. POLYM ADVAN TECHNOL 2011. [DOI: 10.1002/pat.1580] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
|
10
|
Törmä PT, Ali M, Svensk O, Suihkonen S, Sopanen M, Lipsanen H, Mulot M, Odnoblyudov MA, Bougrov VE. InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates. CrystEngComm 2010. [DOI: 10.1039/c001607a] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
11
|
Lee MK, Kuo KK. Microlens Array on Sapphire Substrate Prepared by FIB to Enhance Electroluminescence of GaN/Sapphire Blue LED. ACTA ACUST UNITED AC 2007. [DOI: 10.1149/1.2364304] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
|
12
|
Wang S, Zhou C, Ru H, Zhang Y. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology. APPLIED OPTICS 2005; 44:4429-34. [PMID: 16047890 DOI: 10.1364/ao.44.004429] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.
Collapse
Affiliation(s)
- Shunquan Wang
- Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, China
| | | | | | | |
Collapse
|
13
|
Chen CF, Tzeng SD, Chen HY, Gwo S. Silicon microlens structures fabricated by scanning-probe gray-scale oxidation. OPTICS LETTERS 2005; 30:652-654. [PMID: 15792006 DOI: 10.1364/ol.30.000652] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
We report on the micromachining of silicon microlens structures by use of scanning-probe gray-scale anodic oxidation along with dry anisotropic etching. Convex, concave, and arbitrarily shaped silicon microlenses with diameters as small as 2 microm are demonstrated. We also confirm the high fidelity of pattern transfer between the probe-induced oxides and the etched silicon microlens structures. Besides the flexibility, the important features of scanning-probe gray-scale anodic oxidation are small pixel size and pitch (of the order of tens of nanometers), an unlimited number of gray-scale levels, and the possibility of creating arbitrarily designed microlens structures with exquisite precision and resolution. With this approach, refractive, diffractive, and hybrid microlens arrays can be developed to create innovative optical components.
Collapse
Affiliation(s)
- C F Chen
- Department of Physics and Institute of Microelectromechanical Systems, National Tsing-Hua University, Hsinchu 300, Taiwan
| | | | | | | |
Collapse
|