Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs

High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure

In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO) contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric electrode and metal reflective layer, applying ANSYS to build a coupled electro-thermal finite element model (FEM) of the temperature distribution in the multiple quantum wells (MQWs). We compare our system with the traditional Au-bump flip-chip LED and a flip-chip LED with a Distributed Bragg Reflector (DBR) layer. The simulation results have shown that the flip-chip LED with a metal reflective layer and symmetric electrode exhibits better heat dissipation performance, particularly at high input power. The influence of the insulating layer on the LED chip junction temperature is also examined. The simulation data establish an effect due to the thermal conductivity of the insulating layer in terms of heat dissipation, but this effect is negligible at an insulation layer thickness ≤1 µm.

Light Extraction Analysis of AlGaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method

Micro-scale light emitting diodes (micro-LEDs) commonly employ a thin-film flip-chip (TFFC) structure whose substrate is lifted off by an excimer laser. However, flip-chip (FC) micro-LEDs with a substrate can provide a sharp rise on sidewall emission by increasing the sidewall area. Here, we investigate the influence of substrate thickness, encapsulation, surface texture, microstructures between the substrate and epilayer, as well as the size, cutting shape, and angle of the chip on the light extraction efficiencies (LEEs) of FC micro-LEDs by using the Monte Carlo ray tracing method. We find that the LEE of the blue FC micro-LED chip increases by 46.5% over that of the blue TFFC micro-LED chip. After the encapsulation with the epoxy lens is applied, the LEEs of the blue TFFC micro-LED and blue FC micro-LED increase by 129% and 110.5%, respectively. The underlying mechanisms for the use of surface texture, patterned sapphire substrate, air-void array, and chip shaping technologies to improve the LEEs of FC micro-LEDs are also investigated in detail. We find that the LEEs AlGaInP based red FC micro-LED and GaN based blue/green FC micro-LEDs exhibit a sharp rise when the chip size drops from 30 to 10 µm. The inverted trapezoid FC micro-LED with patterned sapphire substrate (PSS) and encapsulation shows extraordinarily strong top emission and high collimation. We believe that our study offers a promising and practical route for obtaining high efficiency micro-LEDs.

48 × 48 pixelated addressable full-color micro display based on flip-chip micro LEDs

This paper reports on the design and fabrication of a ${48} \times {48}$48×48 full-color pixelated addressable light-emitting diode on silicon (LEDoS) micro display. The metallization pattern was designed and fabricated on a silicon substrate, while red, green, and blue monochromatic micro LEDs were integrated on the silicon substrate using transfer printing. The red, green, and blue micro LEDs are flip-chip structures in which red micro LEDs were fabricated using substrate transfer, mesa etching, metal deposition, and chip dicing. The integration process does not require wire bonding, which reduces the full-color pixel size and increases the integration speed. The LEDoS micro display can be addressed individually for each LED pixel and display representative patterns.

Highly efficient GaN-based high-power flip-chip light-emitting diodes

High-power flip-chip light-emitting diodes (FCLEDs) suffer from low efficiencies because of poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is possible to improve both the light extraction efficiency (LEE) and current spreading of an FCLED by incorporating a highly reflective metallic reflector made from silver (Ag). The reflector, which consists of an Ag film covered by three pairs of TiW/Pt multilayers, demonstrates high reflectance of 95.0% at 460 nm at arbitrary angles of incidence. Our numerical simulation and experimental results reveal that the FCLED with Ag-based reflector exhibits higher LEE and better current spreading than the FCLED with indium-tin oxide (ITO)/distributed Bragg reflector (DBR). As a result, the external quantum efficiency (EQE) of FCLED with Ag-based reflector was 6.0% higher than that of FCLED with ITO/DBR at 750 mA injection current. Our work also suggests that the EQE of FCLED with the Ag-based reflector could be further enhanced 5.2% by replacing the finger-like n-electrodes with three-dimensional (3D) vias n-electrodes, which spread the injection current uniformly over the entire light-emitting active region. This study paves the way towards higher-performance LED technology.

Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes

We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with distributed Bragg reflector (DBR) and without DBR to investigate the effect of dielectric TiO₂/SiO₂ DBR on optical and electrical characteristics of FCLEDs. The reflector consisting of two single TiO₂/SiO₂ DBR stacks optimized for different central wavelengths demonstrates a broader reflectance bandwidth and a less dependence of reflectance on the incident angle of light. As a result, the light output power (LOP) of FCLED with DBR shows 25.3% higher than that of FCLED without DBR at 150 mA. However, due to the better heat dissipation of FCLED without DBR, it was found that the light output saturation current shifted from 268 A/cm² for FCLED with DBR to 296 A/cm² for FCLED without DBR. We found that the use of via-hole-based n-type contacts can spread injection current uniformly over the entire active emitting region. Our study paves the way for application of DBR and via-hole-based n-type contact in high-efficiency FCLEDs.

GaN-based mid-power flip-chip light-emitting diode with high -3 dB bandwidth for visible light communications

By directly flip-chip soldering three mid-power light-emitting diode (LED) chips with periodic micro-via-holes on ceramic substrates, -3  dB modulation bandwidths of 49.9 MHz, 58.8 MHz, and 25 MHz are obtained at the driving current of 170 mA. To the best of our knowledge, these are the reported highest -3  dB bandwidth values for flip-chip power-type LEDs (FC-LEDs) at the low-bias current levels. Moreover, good radiant powers are also achieved: 180.2 mW, 168.8 mW, and 233.8 mW at 150 mA, respectively. With a gold wire-free feature, the fabricated FC-LEDs could offer an opportunity to miniaturize the package volume of a LED module for illumination and free-space high-speed VLC dual-usage applications.