Broadband and omnidirectional antireflection employing disordered GaN nanopillars

Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes

Antireflective (AR) surface texturing is a feasible way to boost the light absorption of photosensitive materials and devices. As a plasma-free etching method, metal-assisted chemical etching (MacEtch) has been employed for fabricating GaN AR surface texturing. However, the poor etching efficiency of typical MacEtch hinders the demonstration of highly responsive photodetectors on an undoped GaN wafer. In addition, GaN MacEtch requires metal mask patterning by lithography, which leads to a huge processing complexity when the dimension of GaN AR nanostructure scales down to the submicron range. In this work, we have developed a facile texturing method of forming a GaN nanoridge surface on an undoped GaN thin film by a lithography-free submicron mask-patterning process via thermal dewetting of platinum. The nanoridge surface texturing effectively reduces the surface reflection in the ultraviolet (UV) regime, which can be translated to a 6-fold enhancement in responsivity (i.e., 115 A/W) of the photodiode at 365 nm. The results demonstrated in this work show that MacEtch can offer a viable route for enhanced UV light-matter interaction and surface engineering in GaN UV optoelectronic devices.

Disorder-Induced Material-Insensitive Optical Response in Plasmonic Nanostructures: Vibrant Structural Colors from Noble Metals

Materials show various responses to incident light, owing to their unique dielectric functions. A well-known example is the distinct colors displayed by metals, providing probably the simplest method to identify gold, silver, and bronze since ancient times. With the advancement of nanotechnology, optical structures with feature sizes smaller than the optical wavelength have been routinely achieved. In this regime, the optical response is also determined by the geometry of the nanostructures, inspiring flourishing progress in plasmonics, photonic crystals, and metamaterials. Nevertheless, the nature of the materials still plays a decisive role in light-matter interactions, and this material-dependent optical response is widely accepted as a norm in nanophotonics. Here, a counterintuitive system-plasmonic nanostructures composed of different materials but exhibiting almost identical reflection-is proposed and realized. The geometric disorder embedded in the system overwhelms the contribution of the material properties to the electrodynamics. Both numerical simulations and experimental results provide concrete evidence of the insensitivity of the optical response to different plasmonic materials. The same optical response is preserved with various materials, providing great flexibility of freedom in material selection. As a result, the proposed configuration may shed light on novel applications ranging from Raman spectroscopy, photocatalysis, to nonlinear optics.

Light trapping enhancement induced by bimetallic non-alloyed nanoparticles on a disordered subwavelength flexible thin film crystalline silicon substrate using metal-assisted chemical etching

We report the application of gold and silver (AuAg) bimetallic non-alloyed nanoparticles (BNNPs) on disordered subwavelength structures (d-SWSs). The combined advantages of the plasmonic structures and d-SWSs improved the light trapping performance of flexible thin film crystalline silicon (c-Si) solar cells. Antireflective d-SWSs were fabricated using spin-coated Ag ink and subsequent metal-assisted chemical etching, which reduced the ion-induced surface damage produced by the dry etching process. The dimensions of the d-SWSs were finely tuned by adjusting the Ag ink ratio. Au8Ag8 BNNPs were employed on optimized d-SWSs to achieve low reflectance at broadband wavelengths. The Au8Ag8 BNNPs on the d-SWSs showed 180% and 145% enhanced absorption compared to bare c-Si film and Au8Ag8 BNNPs on c-Si film, respectively, in the wavelength range of 300-1100 nm. After 200 cycles of bending the antireflection of the structures remained similar to the original level. This study introduces new approaches for light management in flexible thin film c-Si solar cells over the broadband wavelength range.

AuAg bimetallic nonalloyed nanoparticles on a periodically nanostructured GaAs substrate for enhancing light trapping

We present a light trapping structure consisting of AuAg bimetallic nonalloyed nanoparticles (BNNPs) on cone-shaped GaAs subwavelength structures (SWSs), combining the advantages of plasmonic structures and SWSs for GaAs-based solar cell applications. To obtain efficient light trapping in solar cells, the optical properties' dependence on the size and composition of the Ag and Au metal nanoparticles was systematically investigated. Cone-shaped GaAs SWSs with AuAg BNNPs formed from an Au film of 12 nm and an Ag film of 10 nm exhibited the extremely low average reflectance (R(avg)) of 2.43% and the solar-weighted reflectance (SWR) of 2.38%, compared to that of a bare GaAs substrate (R(avg), 37.50%; SWR, 36.72%) in the wavelength range of 300 to 870 nm.

Surface antireflection properties of GaN nanostructures with various effective refractive index profiles

GaN nanostructures with various effective refractive index profiles (Linear, Cubic, and Quintic functions) were numerically studied as broadband omnidirectional antireflection structures for concentrator photovoltaics by using three-dimensional finite difference time domain (3D-FDTD) method. Effective medium theory was used to design the surface structures corresponding to different refractive index profiles. Surface antireflection properties were calculated and analyzed for incident light with wavelength, polarization and angle dependences. The surface antireflection properties of GaN nanostructures based on six-sided pyramid with both uniform and non-uniform patterns were also investigated. Results indicate a significant dependence of the surface antireflection on the refractive index profiles of surface nanostructures as well as their pattern uniformity. The GaN nanostructures with linear refractive index profile show the best performance to be used as broadband omnidirectional antireflection structures.

PDMS-based triboelectric and transparent nanogenerators with ZnO nanorod arrays

Vertically-grown ZnO nanorod arrays (NRAs) on indium tin oxide (ITO)-coated polyethylene terephthalate (PET), as a top electrode of nanogenerators, were investigated for the antireflective property as well as an efficient contact surface in bare polydimethysiloxane (PDMS)-based triboelectric nanogenerators. Compared to conventional ITO-coated PET (i.e., ITO/PET), the ZnO NRAs considerably suppressed the reflectance from 20 to 9.7% at wavelengths of 300-1100 nm, creating a highly transparent top electrode, as demonstrated by theoretical analysis. Also, the interval time between the peaks of generated output voltage under external pushing forces was significantly decreased from 1.84 to 0.19 s because the reduced contact area of the PDMS by discrete surfaces of the ZnO NRAs on ITO/PET causes a rapid sequence for triboelectric charge generation process including rubbing and separating. Therefore, the use of this top electrode enabled to operate the transparent PDMS-based triboelectric nanogenerator at high frequency of external pushing force. Under different external forces of 0.3-10 kgf, the output voltage and current were also characterized.

Compound biomimetic structures for efficiency enhancement of Ga₀.₅In₀.₅P/GaAs/Ge triple-junction solar cells

Biomimetic nanostructures have shown to enhance the optical absorption of Ga₀.₅In₀.₅P/GaAs/Ge triple junction solar cells due to excellent antireflective (AR) properties that, however, are highly dependent on their geometric dimensions. In practice, it is challenging to control fabrication conditions which produce nanostructures in ideal periodic arrangements and with tapered side-wall profiles, leading to sacrificed AR properties and solar cell performance. In this work, we introduce compound biomimetic nanostructures created by depositing a layer of silicon dioxide (SiO₂) on top of titanium dioxide (TiO₂) nanostructures for triple junction solar cells. The device exhibits photogenerated current and power conversion efficiency that are enhanced by ~8.9% and ~6.4%, respectively, after deposition due to their improved antireflection characteristics. We further investigate and verify the optical properties of compound structures via a rigorous coupled wave analysis model. The additional SiO₂ layer not only improves the geometric profile, but also serves as a double-layer dielectric coating. It is concluded that the compound biomimetic nanostructures exhibit superior AR properties that are relatively insensitive to fabrication constraints. Therefore, the compound approach can be widely adopted for versatile optoelectronic devices and applications.

Numerical Modeling of Sub-Wavelength Anti-Reflective Structures for Solar Module Applications

This paper reviews the current progress in mathematical modeling of anti-reflective subwavelength structures. Methods covered include effective medium theory (EMT), finite-difference time-domain (FDTD), transfer matrix method (TMM), the Fourier modal method (FMM)/rigorous coupled-wave analysis (RCWA) and the finite element method (FEM). Time-based solutions to Maxwell's equations, such as FDTD, have the benefits of calculating reflectance for multiple wavelengths of light per simulation, but are computationally intensive. Space-discretized methods such as FDTD and FEM output field strength results over the whole geometry and are capable of modeling arbitrary shapes. Frequency-based solutions such as RCWA/FMM and FEM model one wavelength per simulation and are thus able to handle dispersion for regular geometries. Analytical approaches such as TMM are appropriate for very simple thin films. Initial disadvantages such as neglect of dispersion (FDTD), inaccuracy in TM polarization (RCWA), inability to model aperiodic gratings (RCWA), and inaccuracy with metallic materials (FDTD) have been overcome by most modern software. All rigorous numerical methods have accurately predicted the broadband reflection of ideal, graded-index anti-reflective subwavelength structures; ideal structures are tapered nanostructures with periods smaller than the wavelengths of light of interest and lengths that are at least a large portion of the wavelengths considered.

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

Antireflective disordered subwavelength structure on GaAs using spin-coated Ag ink mask

We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs d-SWSs rely on their geometric profiles, which were controlled by adjusting the distribution of Ag etch masks via changing the concentration of Ag atoms and the sintering temperature of Ag ink as well as the ICP etching conditions. The fabricated GaAs d-SWSs drastically reduced the reflection loss compared to that of bulk GaAs (>30%) in the wavelength range of 300-870 nm. The most desirable GaAs d-SWSs for practical solar cell applications exhibited a solar-weighted reflectance (SWR) of 2.12%, which is much lower than that of bulk GaAs (38.6%), and its incident angle-dependent SWR was also investigated.

Nano-patterned glass superstrates with different aspect ratios for enhanced light harvesting in a-Si:H thin film solar cells

Nano-patterned glass superstrates obtained via a large-area production approach are desirable for antireflection and light trapping in thin-film solar cells. The tapered nanostructures allow a graded refractive index profile between the glass and material interfaces, leading to suppressed surface reflection and increased forward diffraction of light. In this work, we investigate nanostructured glass patterns with different aspect ratios using scalable nanosphere lithography for hydrogenated amorphous silicon (a-Si:H) thin film solar cells. Compared to flat glass cell and Asahi U-type glass cell, enhancements in short-circuit current density (J(sc)) of 51.6% and 8%, respectively, were achieved for a moderate aspect ratio of 0.16. The measured external quantum efficiencies (EQE) spectra confirmed a broadband enhancement due to antireflection and light trapping properties.

Analysis of diffuse reflectivity of a highly disordered GaN nanostructure as an antireflection coating

A highly disordered GaN nanostructure was grown by using hydride vapor phase epitaxy on an Si(100) substrate, and its diffuse reflectivity was measured in the 200-1200 nm spectral range by using an integrating sphere. A modified multiple-scattering-based model successfully explained the spectral distribution of diffuse reflectivity of this highly disordered GaN nanostructure.

Enhanced transmittance and hydrophilicity of nanostructured glass substrates with antireflective properties using disordered gold nanopatterns

We fabricated surface nanostructures with different pillar and cone shapes on glass substrates using thermally dewetted gold (Au) nanoparticles as etch masks by dry etching. Their optical total transmittance characteristics, together with theoretical predictions using rigorous coupled-wave analysis simulation, and wetting behaviors were investigated. The nanostructured glass substrates strongly enhanced the surface transmission compared to the flat glass substrate. The glass nanocones with a linearly graded effective refractive index profile exhibited better transmission properties than the glass nanopillars due to the lower surface reflectance, thus leading to higher average transmittance with increasing their height. For the glass nanocones with a period of 106 ± 39 nm at the Au film thickness of 5 nm, the higher average total transmittance (Tave) and solar weighted transmittance (SWT) of ~95.5 and ~95.8% at wavelengths of 300-1100 nm and the lower contact angle (θc) of 31° were obtained compared to the flat glass substrate (i.e., Tave~92.7%, SWT~92.7%, and θc~65°). The calculated total transmittance results showed a similar tendency to the experimental results.

Use of two-dimensional nanorod arrays with slanted ITO film to enhance optical absorption for photovoltaic applications

Two-dimensional (2D) Si-nanorod arrays offer a promising architecture that has been widely recognized as attractive devices for photovoltaic applications. To further reduce the Fresnel reflection that occurs at the interface between the air and the 2D Si-nanorod array because of the large difference in their effective refractive indices, we propose and adopt a slanted ITO film as an intermediate layer by using oblique-angle sputtering deposition. The nearly continuous surface of the slanted ITO film is lossless and has high electrical conductivity; therefore, it could serve as an electrode layer for solar cells. As a result, the combination of the above-mentioned nanostructures exhibits high optical absorption over a broad range of wavelengths and incident angles, along with a calculated short-circuit current density of JSC = 32.81 mA/cm2 and a power generation efficiency of η = 22.70%, which corresponds to an improvement of approximately 42% over that of its bare single-crystalline Si counterpart.

Broadband antireflective germanium surfaces based on subwavelength structures for photovoltaic cell applications

We fabricated the germanium (Ge) subwavelength structures (SWSs) using gold (Au) metallic nanopatterns dewetted by rapid thermal annealing and inductively coupled plasma etching in SiCl(4) plasma for Ge-based photovoltaic cells. Using the optimized Au nanopatterns as an etch mask, the Ge SWSs were formed by varying the etching parameters to achieve the better antireflection properties. The reflectance of Ge SWSs depended strongly on their period, height, and shape which are closely related to the refractive index profile between air and the Ge substrate. The tapered cone Ge SWSs reduced considerably the reflectance compared to the samples with a truncated cone shape as well as the Ge substrate due to the linearly graded refractive index distribution from air to the Ge substrate. The Ge SWS with the tapered cone shape and high height exhibited a dramatic decrease in the reflectance (i.e., <10%) over a wide wavelength region of 350-1800 nm, thus leading to a low solar weighted reflectance of ~3.6%. The reflectance was also lower than ~8.8% at a wavelength of 633 nm in the incident angle range of 15-85°. The measured reflectance data of Ge SWSs showed similar trends to the calculated results in a rigorous coupled wave analysis simulation.

Wafer-scale broadband antireflective silicon fabricated by metal-assisted chemical etching using spin-coating Ag ink

We report broadband antireflective disordered subwavelength structures (d-SWSs), which were fabricated on 4-inch silicon wafers by spin-coating Ag ink and metal-assisted chemical etching. The antireflection properties of the d-SWSs depend on its dimensions and heights, which were changed by the sintering temperature of the spin-coated Ag ink and etching time. The fabricated d-SWSs drastically reduced surface reflection over a wide range of wavelengths and incident angles, providing good surface uniformity. The d-SWSs with the most appropriate geometry for practical solar cell applications exhibit only 1.23% solar-weighted reflectance in the wavelength range of 300-1100 nm and average reflectance <5% up to an incident angle of 55° in the wavelength range of 300-2500 nm. This simple and low-cost nanofabrication method for antireflection could be of great importance in optical device applications because it allows mass production without any lithography processes or sophisticated equipment.

Embedded biomimetic nanostructures for enhanced optical absorption in thin-film solar cells

Light-management is critical to thin film solar cells due to their usually limited optical absorption in the active layer. Conventional approaches involve employing separate techniques for anti-reflection and light trapping. Here, we demonstrate an embedded biomimetic nanostructure (EBN) that achieves both effects for hydrogenated amorphous silicon (a-Si:H) solar cells. The fabrication of EBNs is accomplished by patterning an index-matching silicon-nitride layer deposited on a glass substrate using polystyrene nanospheres lithography, followed by reactive ion etching. The profile of EBN is then reproduced layer by layer during the deposition of a-Si:H cells. We show that a solar cell with an optimized EBN exhibits a broadband enhanced external quantum efficiency due to both anti-reflection and light-trapping, with respect to an industrial standard cell using an Asahi U glass substrate which is mostly optimized for light trapping. Overall, the cell with an optimized EBN achieves a large short-circuit current density of 17.74 mA/cm(2), corresponding to a 37.63% enhancement over a flat control cell. The power conversion efficiency is also increased from 5.36% to 8.32%. Moreover, the light management enabled by the EBN remains efficient over a wide range of incident angles up to 60°, which is particularly desirable for real environments with diffused sun light. The novel patterning method is not restricted to a-Si:H solar cells, but is also widely applicable to other thin film materials.

Realization of effective light trapping and omnidirectional antireflection in smooth surface silicon nanowire arrays

We have successfully fabricated well-ordered silicon nanowire (SiNW) arrays of smooth surface by using a low-cost and facile Ag-assisted chemical etching technique. We have experimentally found that the reflectance can be significantly suppressed (<1%) over a wide solar spectrum (300-1000 nm) in the as-grown samples. Also, based on our bundled model, we have used rigorous coupled-wave analysis to simulate the reflectance in SiNW arrays, and found that the calculated results are in good agreement with the experimental data. From a further simulation study on the light absorption in SiNW arrays, we have obtained a photocurrent enhancement of up to 425% per unit volume of material as compared to crystalline Si, implying that effective light trapping can be realized in the as-grown samples. In addition, we have demonstrated experimentally and theoretically that the as-grown samples have an omnidirectional high-efficiency antireflection property.

Enhanced conversion efficiency of a crystalline silicon solar cell with frustum nanorod arrays

Enhanced photoelectric conversion is demonstrated in a crystalline silicon (c-Si) solar cell with frustum nanorod arrays (FNAs), fabricated using colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the cell with FNAs improves the power conversion efficiency by nearly 30%, compared to a conventional wet-chemical-textured reference. The enhancement mostly arises from the superior antireflective properties for wavelengths between 400 nm and 1000 nm. In that spectral range, we show that photons gained by reflection reduction directly contribute to collected carriers without auxiliary losses due to nano-fabrication. Moreover, the omnidirectional antireflection of FNAs is also investigated using an angle-resolved reflectance spectroscopy. The dimensions of FNAs are further analyzed with numerical calculations based on Maxwell's equations. The optimized short-circuit current density achieves nearly 40 mA/cm2, corresponding to a 16% enhancement compared to the conventional device.

Enhancement of optical transmission with random nanohole structures

We demonstrate an enhancement of optical transmission by creating randomly distributed nanoholes in a glass surface using a simple bottom-up fabrication process. V-shaped holes with sub-100 nm diameter are created by anodized aluminum oxide template and dry etching on glass substrates. The broadband and omnidirectional antireflective effect of the proposed nanostructures is confirmed by measuring the transmittance of the patterned glasses, leading to 3% better transmission. Subsequently, the short-circuit current and the open-circuit voltage of a solar cell with nanostructures are enhanced by 3-4%, improving the solar cell efficiency from 10.47% to 11.20% after two weeks of outdoor testing.

Improved optical transmission and current matching of a triple-junction solar cell utilizing sub-wavelength structures

Sub-wavelength antireflective structures are fabricated on a silicon nitride passivation layer of a Ga₀.₅In₀.₅P/GaAs/Ge triple-junction solar cell using polystyrene nanosphere lithography followed by anisotropic etching. The fabricated structures enhance optical transmission in the ultraviolet wavelength range, compared to a conventional single-layer antireflective coating (ARC). The transmission improvement contributes to an enhanced photocurrent, which is also verified by the external quantum efficiency characterization of the fabricated solar cells. Under one-sun illumination, the short-circuit current of a cell with sub-wavelength structures is enhanced by 46.1% and 3.4% due to much improved optical transmission and current matching, compared to cells without an ARC and with a conventional SiN(x) ARC, respectively. Further optimizations of the sub-wavelength structures including the periodicity and etching depth are conducted by performing comprehensive calculations based on a rigorous couple-wave analysis method.

Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure

We propose, fabricate and characterize the freestanding GaN nanocolumn membrane with bottom subwavelength nanostructures. The GaN nanocolumns are epitaxially grown on freestanding nanostructured silicon substrate that is achieved by a combination of self-assemble technique and silicon-on-insulator (SOI) technology. Optical reflection is greatly suppressed in the visible range due to the graded refractive index effect of subwavelength nanostructures. The freestanding GaN nanocolumn membrane is realized by removing silicon substrate from the backside, eliminating the silicon absorption of the emitted light and leading to a strong blue emission from the bottom side. The obtained structures also demonstrate the potential application for anti-reflective (AR) coating and GaN-Si hybrid microelectromechanical system (MEMS).

Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab

We develop a novel way to fabricate subwavelength nanostructures on the freestanding GaN slab using a GaN-on-silicon system by combining self-assemble technique and backside thinning method. Silicon substrate beneath the GaN slab is removed by bulk silicon micromachining, generating the freestanding GaN slab and eliminating silicon absorption of the emitted light. Fast atom beam (FAB) etching is conducted to thin the freestanding GaN slab from the backside, reducing the number of confined modes inside the GaN slab. With self-assembled silica nanospheres acting as an etching mask, subwavelength nanostructures are realized on the GaN surface by FAB etching. The reflection losses at the GaN interfaces are thus suppressed. When the InGaN/GaN multiple quantum wells (MQWs) active layers are excited, the light extraction efficiency is significantly improved for the freestanding nanostructured GaN slab. This work provides a very practical approach to fabricate freestanding nanostructures on the GaN-on-silicon system for further improving the light extraction efficiency.

Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes

This paper presents a novel and mass-producible technique to fabricate indium-tin-oxide (ITO) nanorods which serve as an omnidirectional transparent conductive layer (TCL) for InGaN/GaN light emitting diodes (LEDs). The characteristic nanorods, prepared by oblique electron-beam evaporation in a nitrogen ambient, demonstrate high optical transmittance (T>90%) for the wavelength range of 450nm to 900nm. The light output power of a packaged InGaN/GaN LED with the incorporated nanorod layer is increased by 35.1% at an injection current of 350mA, compared to that of a conventional LED. Calculations based on a finite difference time domain (FDTD) method suggest that the extraction enhancement factor can be further improved by increasing the thickness of the nanorod layer, indicating great potential to enhance the luminous intensity of solid-state lighting devices using ITO nanorod structures.

Lithography-Free Fabrication of Large Area Subwavelength Antireflection Structures Using Thermally Dewetted Pt/Pd Alloy Etch Mask

We have demonstrated lithography-free, simple, and large area fabrication method for subwavelength antireflection structures (SAS) to achieve low reflectance of silicon (Si) surface. Thin film of Pt/Pd alloy on a Si substrate is melted and agglomerated into hemispheric nanodots by thermal dewetting process, and the array of the nanodots is used as etch mask for reactive ion etching (RIE) to form SAS on the Si surface. Two critical parameters, the temperature of thermal dewetting processes and the duration of RIE, have been experimentally studied to achieve very low reflectance from SAS. All the SAS have well-tapered shapes that the refractive index may be changed continuously and monotonously in the direction of incident light. In the wavelength range from 350 to 1800 nm, the measured reflectance of the fabricated SAS averages out to 5%. Especially in the wavelength range from 550 to 650 nm, which falls within visible light, the measured reflectance is under 0.01%.