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Moridsadat M, Tamura M, Chrostowski L, Shekhar S, Shastri BJ. Physics to system-level modeling of silicon-organic-hybrid nanophotonic devices. Sci Rep 2024; 14:11751. [PMID: 38782947 PMCID: PMC11116435 DOI: 10.1038/s41598-024-61618-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 05/07/2024] [Indexed: 05/25/2024] Open
Abstract
The continuous growth in data volume has sparked interest in silicon-organic-hybrid (SOH) nanophotonic devices integrated into silicon photonic integrated circuits (PICs). SOH devices offer improved speed and energy efficiency compared to silicon photonics devices. However, a comprehensive and accurate modeling methodology of SOH devices, such as modulators corroborating experimental results, is lacking. While some preliminary modeling approaches for SOH devices exist, their reliance on theoretical and numerical methodologies, along with a lack of compatibility with electronic design automation (EDA), hinders their seamless and rapid integration with silicon PICs. Here, we develop a phenomenological, building-block-based SOH PICs simulation methodology that spans from the physics to the system level, offering high accuracy, comprehensiveness, and EDA-style compatibility. Our model is also readily integrable and scalable, lending itself to the design of large-scale silicon PICs. Our proposed modeling methodology is agnostic and compatible with any photonics-electronics co-simulation software. We validate this methodology by comparing the characteristics of experimentally demonstrated SOH microring modulators (MRMs) and Mach Zehnder modulators with those obtained through simulation, demonstrating its ability to model various modulator topologies. We also show our methodology's ease and speed in modeling large-scale systems. As an illustrative example, we use our methodology to design and study a 3-channel SOH MRM-based wavelength-division (de)multiplexer, a widely used component in various applications, including neuromorphic computing, data center interconnects, communications, sensing, and switching networks. Our modeling approach is also compatible with other materials exhibiting the Pockels and Kerr effects. To our knowledge, this represents the first comprehensive physics-to-system-level EDA-compatible simulation methodology for SOH modulators.
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Affiliation(s)
- Maryam Moridsadat
- Department of Physics, Center of Nanophotonics, Engineering Physics and Astronomy, Queen's University, 64 Bader Lane, Kingston, ON, K7L 3N6, Canada.
| | - Marcus Tamura
- Department of Physics, Center of Nanophotonics, Engineering Physics and Astronomy, Queen's University, 64 Bader Lane, Kingston, ON, K7L 3N6, Canada
| | - Lukas Chrostowski
- Department of Electrical and Computer Engineering, University of British Columbia, Vancouver, BC, V6T 1Z4, Canada
| | - Sudip Shekhar
- Department of Electrical and Computer Engineering, University of British Columbia, Vancouver, BC, V6T 1Z4, Canada
| | - Bhavin J Shastri
- Department of Physics, Center of Nanophotonics, Engineering Physics and Astronomy, Queen's University, 64 Bader Lane, Kingston, ON, K7L 3N6, Canada.
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Hong J, Rokumyo K, Mao J, Bannaron A, Sato H, Yokoyama S. Efficient four-wave mixing wavelength conversion in a hybrid silicon slot and polymer microring resonator. OPTICS EXPRESS 2022; 30:45499-45507. [PMID: 36522954 DOI: 10.1364/oe.475748] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2022] [Accepted: 11/15/2022] [Indexed: 06/17/2023]
Abstract
We present a silicon slot microring resonator for efficient frequency conversion via four-wave mixing (FWM). The slot consists of a narrow silicon waveguide pair with a gap of 80 nm, which is filled with a nonlinear optical polymer. The group velocity dispersion for the microring is controlled by engineering the geometry of the slot structure. Because of the large buildup factor of the slot microring, an FWM conversion efficiency of -27.4 dB is achieved with an optical pump power of less than 1.0 mW. From the measured power dependence of FWM generation, a nonlinear refractive index coefficient of 1.31 × 10-17 m2 W-1 is obtained at a wavelength of 1562 nm. This work presents a hybrid silicon slot and polymer microring as a potential nonlinear device for applications in integrated photonic devices.
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Pushkarev AV, Orlov AV, Znoyko SL, Bragina VA, Nikitin PI. Rapid and Easy-to-Use Method for Accurate Characterization of Target Binding and Kinetics of Magnetic Particle Bioconjugates for Biosensing. SENSORS (BASEL, SWITZERLAND) 2021; 21:2802. [PMID: 33921145 PMCID: PMC8071512 DOI: 10.3390/s21082802] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2021] [Revised: 04/07/2021] [Accepted: 04/12/2021] [Indexed: 12/14/2022]
Abstract
The ever-increasing use of magnetic particle bioconjugates (MPB) in biosensors calls for methods of comprehensive characterization of their interaction with targets. Label-free optical sensors commonly used for studying inter-molecular interactions have limited potential for MPB because of their large size and multi-component non-transparent structure. We present an easy-to-use method that requires only three 20-min express measurements to determine the key parameters for selection of optimal MPB for a biosensor: kinetic and equilibrium characteristics, and a fraction of biomolecules on the MPB surface that are capable of active targeting. The method also provides a prognostic dependence of MPB targeting efficiency upon interaction duration and sample volume. These features are possible due to joining a magnetic lateral flow assay, a highly sensitive sensor for MPB detection by the magnetic particle quantification technique, and a novel mathematical model that explicitly describes the MPB-target interactions and does not comprise parameters to be fitted additionally. The method was demonstrated by experiments on MPB targeting of cardiac troponin I and staphylococcal enterotoxin B. The validation by an independent label-free technique of spectral-correlation interferometry showed good correlation between the results obtained by both methods. The presented method can be applied to other targets for faster development and selection of MPB for affinity sensors, analytical technologies, and realization of novel concepts of MPB-based biosensing in vivo.
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Affiliation(s)
- Averyan V. Pushkarev
- Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow, Russia; (A.V.P.); (A.V.O.); (S.L.Z.); (V.A.B.)
- Moscow Institute of Physics and Technology, 9 Institutskii per., Dolgoprudny, 141700 Moscow Region, Russia
| | - Alexey V. Orlov
- Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow, Russia; (A.V.P.); (A.V.O.); (S.L.Z.); (V.A.B.)
| | - Sergey L. Znoyko
- Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow, Russia; (A.V.P.); (A.V.O.); (S.L.Z.); (V.A.B.)
| | - Vera A. Bragina
- Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow, Russia; (A.V.P.); (A.V.O.); (S.L.Z.); (V.A.B.)
| | - Petr I. Nikitin
- Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow, Russia; (A.V.P.); (A.V.O.); (S.L.Z.); (V.A.B.)
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Harris GI, Sawadsky A, Sfendla YL, Wasserman WW, Bowen WP, Baker CG. Proposal for a quantum traveling Brillouin resonator. OPTICS EXPRESS 2020; 28:22450-22461. [PMID: 32752505 DOI: 10.1364/oe.397478] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2020] [Accepted: 07/07/2020] [Indexed: 06/11/2023]
Abstract
Brillouin systems operating in the quantum regime have recently been identified as a valuable tool for quantum information technologies and fundamental science. However, reaching the quantum regime is extraordinarily challenging, owing to the stringent requirements of combining low thermal occupation with low optical and mechanical dissipation, and large coherent phonon-photon interactions. Here, we propose an on-chip liquid based Brillouin system that is predicted to exhibit large phonon-photon coupling with exceptionally low acoustic dissipation. The system is comprised of a silicon-based "slot" waveguide filled with superfluid helium. This type of waveguide supports optical and acoustical traveling waves, strongly confining both fields into a subwavelength-scale mode volume. It serves as the foundation of an on-chip traveling wave Brillouin resonator with an electrostrictive single photon optomechanical coupling rate exceeding 240 kHz. Such devices may enable applications ranging from ultra-sensitive superfluid-based gyroscopes, to non-reciprocal optical circuits. Furthermore, this platform opens up new possibilities to explore quantum fluid dynamics in a strongly interacting condensate.
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Sadeghi M, Janjan B. Enhanced quasi-phase-matched second-harmonic generation in a silicon-organic hybrid microring resonator. APPLIED OPTICS 2020; 59:1117-1122. [PMID: 32225250 DOI: 10.1364/ao.380046] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2019] [Accepted: 12/23/2019] [Indexed: 06/10/2023]
Abstract
An enhanced second-harmonic generation process in a dually resonant silicon-organic hybrid microring resonator is presented. The necessary phase matching is fulfilled through quasi-phase matching by periodically altering the spatial distribution of the second-order nonlinearity ${\chi ^{(2)}}$χ(2) of polymer infiltrated into a slot layer along the microring resonator propagation length. Absolute conversion efficiency up to ${P_{2\omega }}/{P_\omega } = {38}\% $P2ω/Pω=38% with only 10 mW pump power at $\lambda = 3.1\;{\unicode{x00B5}{\rm m}}$λ=3.1µm is obtained in an optimized structure, which shows a ${\sim}{76}$∼76-fold improvement compared to that of the straight waveguide. Also, our efficiency is comparable to that of previous works, even with the much lower pump power. We expect that our device will provide a potential application for bridging the mid-infrared and near-infrared bands on silicon photonics platforms.
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Qiu F, Spring AM, Hong J, Yokoyama S. Plate-slot polymer waveguide modulator on silicon-on-insulator. OPTICS EXPRESS 2018; 26:11213-11221. [PMID: 29716045 DOI: 10.1364/oe.26.011213] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2018] [Accepted: 04/04/2018] [Indexed: 06/08/2023]
Abstract
Electro-optic (EO) modulators are vital for efficient "electrical to optical" transitions and high-speed optical interconnects. In this work, we applied an EO polymer to demonstrate modulators on silicon-on-insulator substrates. The fabricated Mach-Zehnder interferometer (MZI) and ring resonator consist of a Si and TiO2 slot, in which the EO polymer was embedded to realize a low-driving and large bandwidth modulation. The designed optical and electrical constructions are able to provide a highly concentrated TM mode with low propagation loss and effective EO properties. The fabricated MZI modulator shows a π-voltage-length product of 0.66 V·cm and a 3-dB bandwidth of 31 GHz. The measured EO activity is advantageous to exploit the ring modulator with a resonant tunability of 0.065 nm/V and a 3-dB modulation bandwidth up to 13 GHz.
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Fujiwara M, Wakabayashi R, Sasaki M, Takeoka M. Wavelength division multiplexed and double-port pumped time-bin entangled photon pair generation using Si ring resonator. OPTICS EXPRESS 2017; 25:3445-3453. [PMID: 28241558 DOI: 10.1364/oe.25.003445] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report a wavelength division multiplexed time-bin entangled photon pair source in telecom wavelength using a 10 μm radius Si ring resonator. This compact resonator has two add ports and two drop ports. By pumping one add port by a continuous laser, we demonstrate an efficient generation of two-wavelength division multiplexed time-bin entangled photon pairs in the telecom C-band, which come out of one drop port, and are then split into the signal and idler photons via a wavelength filter. The resonator structure enhances four-wave mixing for pair generation. Moreover, we demonstrate the double-port pumping where two counter propagating pump lights are injected to generate entanglement from the two drop ports simultaneously. We successfully observe the highly entangled outputs from both two drop ports. Surprisingly, the count rate at each drop port is even increased by twice that of the single-port pumping. Possible mechanisms of this observation are discussed. Our technique allows for the efficient use of the Si ring resonator and widens its functionality for variety of applications.
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8
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Ahmadi L, Kontturi V, Laukkanen J, Saarinen J, Honkanen S, Kuittinen M, Roussey M. Strip-loaded waveguide on titanium dioxide thin films by nanoimprint replication. OPTICS LETTERS 2017; 42:527-530. [PMID: 28146519 DOI: 10.1364/ol.42.000527] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We present a convenient, low-cost, and mass-production-compatible technique for the fabrication of strip-loaded waveguides. The technique is based on the atomic layer deposition of a slab waveguide, nanoimprinting of a strip, and integration of two structures by lamination. The guiding layer is chosen to be a 200 nm thick titanium dioxide film. The waveguide characteristics are determined by the use of ring resonators. The technique is demonstrated for titanium dioxide thin films, but it is applicable to any other material that meets the refractive index difference condition between the loading strip and the slab waveguide.
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Lauermann M, Weimann C, Knopf A, Heni W, Palmer R, Koeber S, Elder DL, Bogaerts W, Leuthold J, Dalton LR, Rembe C, Freude W, Koos C. Integrated optical frequency shifter in silicon-organic hybrid (SOH) technology. OPTICS EXPRESS 2016; 24:11694-11707. [PMID: 27410095 DOI: 10.1364/oe.24.011694] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We demonstrate for the first time a waveguide-based frequency shifter on the silicon photonic platform using single-sideband modulation. The device is based on silicon-organic hybrid (SOH) electro-optic modulators, which combine conventional silicon-on-insulator waveguides with highly efficient electro-optic cladding materials. Using small-signal modulation, we demonstrate frequency shifts of up to 10 GHz. We further show large-signal modulation with optimized waveforms, enabling a conversion efficiency of -5.8 dB while suppressing spurious side-modes by more than 23 dB. In contrast to conventional acousto-optic frequency shifters, our devices lend themselves to large-scale integration on silicon substrates, while enabling frequency shifts that are several orders of magnitude larger than those demonstrated with all-silicon serrodyne devices.
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10
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Ong JR, Chen VH. Optimal geometry of nonlinear silicon slot waveguides accounting for the effect of waveguide losses. OPTICS EXPRESS 2015; 23:33622-33633. [PMID: 26832026 DOI: 10.1364/oe.23.033622] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The optimal geometry of silicon-organic hybrid slot waveguides is investigated in the context of the efficiency of four-wave mixing (FWM), a χ(3) nonlinear optical process. We study the effect of slot and waveguide widths, as well as waveguide asymmetry on the two-photon absorption (TPA) figure of merit and the roughness scattering loss. The optimal waveguide core width is shown to be 220nm (symmetric) with a slot width of 120nm, at a fixed waveguide height of 220nm. We also show that state-of-the-art slot waveguides can outperform rib waveguides, especially at high powers, due to the high TPA figure-of-merit.
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11
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Zhang W, Serna S, Le Roux X, Alonso-Ramos C, Vivien L, Cassan E. Analysis of silicon-on-insulator slot waveguide ring resonators targeting high Q-factors. OPTICS LETTERS 2015; 40:5566-5569. [PMID: 26625052 DOI: 10.1364/ol.40.005566] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Vertical slot waveguide micro-ring resonators in silicon photonics have already been demonstrated in previous works and applied to several schemes, including sensing and hybrid nonlinear optics. Their performances, first quantified by the reachable Q-factors, are still perceived to be restrained by larger intrinsic propagation losses than those suffered by simple Si wire waveguides. In this Letter, the optical loss mechanisms of slot waveguide micro-ring resonators are thoroughly investigated with a special focus on the coupler loss contribution that turns out to be the key obstacle to achieving high Q-factors. By engineering the coupler design, slotted ring resonators with a 50 μm radius are experienced with a loaded Q-factor up to 10 times improvement from Q=3,000 to Q=30,600. The intrinsic losses due to the light propagation in the bent slot ring itself are proved to be as low as 1.32±0.87 dB/cm at λ=1,550 nm. These investigations of slot ring resonators open high performance potentials for on-chip nonlinear optical processing or sensing in hybrid silicon photonics.
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12
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Zhou F, Zhang M, Dai J, Wang Y, Deng L, Liu D. Efficient and broadband wavelength conversion in a slot waveguide with the periodic structure altering the phase-mismatch. APPLIED OPTICS 2015; 54:7753-7759. [PMID: 26368901 DOI: 10.1364/ao.54.007753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
High-efficiency wavelength conversion based on the quasi-phase-matching technique is proposed and simulated in a silicon slot waveguide. Due to the tight light confinement and high nonlinear material (silicon nanocrystal) filled in the slot region, a large nonlinear coefficient of 4100/(W·m) is achieved. With the waveguide width changing alternately to manage the phase-mismatch, periodical attenuation of the idler power is suppressed even in the presence of severe dispersion. Numerical simulation shows that an efficiency of -12.3 dB at 1850 nm and a 3-dB bandwidth of 484 nm are available for the 1550 nm wavelength pump in a 4 mm long silicon slot waveguide.
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13
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Luo S, Wang Y, Tong X, Wang Z. Graphene-based optical modulators. NANOSCALE RESEARCH LETTERS 2015; 10:199. [PMID: 26034412 PMCID: PMC4444650 DOI: 10.1186/s11671-015-0866-7] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2015] [Accepted: 03/17/2015] [Indexed: 05/22/2023]
Abstract
Optical modulators (OMs) are a key device in modern optical systems. Due to its unique optical properties, graphene has been recently utilized in the fabrication of optical modulators, which promise high performance such as broadband response, high modulation speed, and high modulation depth. In this paper, the latest experimental and theoretical demonstrations of graphene optical modulators (GOMs) with different structures and functions are reviewed. Particularly, the principles of electro-optical and all-optical modulators are illustrated. Additionally, the limitation of GOMs and possible methods to improve performance and practicability are discussed. At last, graphene terahertz modulators (GTMs) are introduced.
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Affiliation(s)
- Siyuan Luo
- />Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
- />State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
| | - Yanan Wang
- />Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
| | - Xin Tong
- />Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
| | - Zhiming Wang
- />Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
- />State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
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14
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Chen L, Wood MG, Reano RM. Compensating thermal drift of hybrid silicon and lithium niobate ring resonances. OPTICS LETTERS 2015; 40:1599-1602. [PMID: 25831394 DOI: 10.1364/ol.40.001599] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We present low-power compensation of thermal drift of resonance wavelengths in hybrid silicon and lithium niobate ring resonators based on the linear electro-optic effect. Fabricated devices demonstrate a resonance wavelength tunability of 12.5 pm/V and a tuning range of 1 nm. A capacitive geometry and low thermal sensitivity result in the compensation of 17°C of temperature variation using tuning powers at sub-nanowatt levels. The method establishes a route for stabilizing high-quality factor resonators in chip-scale integrated photonics subject to temperature variations.
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15
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A hybrid electro-optic polymer and TiO2 double-slot waveguide modulator. Sci Rep 2015; 5:8561. [PMID: 25708425 PMCID: PMC4338480 DOI: 10.1038/srep08561] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2014] [Accepted: 01/27/2015] [Indexed: 11/08/2022] Open
Abstract
An electro-optic (EO) modulator using a TiO2 slot hybrid waveguide has been designed and fabricated. Optical mode calculations revealed that the mode was primarily confined within the slots when using a double-slot configuration, thus achieving a high EO activity experimentally. The TiO2 slots also acted as an important barrier to induce an enhanced DC field during the poling of the EO polymer and the driving of the EO modulator. The hybrid phase modulator exhibited a driving voltage (Vπ) of 1.6 V at 1550 nm, which can be further reduced to 0.8 V in a 1 cm-long push-pull Mach-Zehnder interferometer (MZI) structure. The modulator demonstrated a low propagation loss of 5 dB/cm and a relatively high end-fire coupling efficiency.
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Subbaraman H, Xu X, Hosseini A, Zhang X, Zhang Y, Kwong D, Chen RT. Recent advances in silicon-based passive and active optical interconnects. OPTICS EXPRESS 2015; 23:2487-2510. [PMID: 25836116 DOI: 10.1364/oe.23.002487] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.
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Müller J, Merget F, Sharif Azadeh S, Hauck J, García SR, Shen B, Witzens J. Optical peaking enhancement in high-speed ring modulators. Sci Rep 2014; 4:6310. [PMID: 25209255 PMCID: PMC4160714 DOI: 10.1038/srep06310] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/13/2014] [Accepted: 08/19/2014] [Indexed: 11/23/2022] Open
Abstract
Ring resonator modulators (RRM) combine extreme compactness, low power consumption and wavelength division multiplexing functionality, making them a frontrunner for addressing the scalability requirements of short distance optical links. To extend data rates beyond the classically assumed bandwidth capability, we derive and experimentally verify closed form equations of the electro-optic response and asymmetric side band generation resulting from inherent transient time dynamics and leverage these to significantly improve device performance. An equivalent circuit description with a commonly used peaking amplifier model allows straightforward assessment of the effect on existing communication system architectures. A small signal analytical expression of peaking in the electro-optic response of RRMs is derived and used to extend the electro-optic bandwidth of the device above 40 GHz as well as to open eye diagrams penalized by intersymbol interference at 32, 40 and 44 Gbps. Predicted peaking and asymmetric side band generation are in excellent agreement with experiments.
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Affiliation(s)
- J Müller
- Integrated Photonics Laboratory, RWTH Aachen, Sommerfeldstr. 14, D-52074 Aachen, Germany
| | - F Merget
- Integrated Photonics Laboratory, RWTH Aachen, Sommerfeldstr. 14, D-52074 Aachen, Germany
| | - S Sharif Azadeh
- Integrated Photonics Laboratory, RWTH Aachen, Sommerfeldstr. 14, D-52074 Aachen, Germany
| | - J Hauck
- Integrated Photonics Laboratory, RWTH Aachen, Sommerfeldstr. 14, D-52074 Aachen, Germany
| | - S Romero García
- Integrated Photonics Laboratory, RWTH Aachen, Sommerfeldstr. 14, D-52074 Aachen, Germany
| | - B Shen
- Integrated Photonics Laboratory, RWTH Aachen, Sommerfeldstr. 14, D-52074 Aachen, Germany
| | - J Witzens
- Integrated Photonics Laboratory, RWTH Aachen, Sommerfeldstr. 14, D-52074 Aachen, Germany
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Enami Y, Kayaba Y, Luo J, Jen AKY. Mesoporous sol-gel silica cladding for hybrid TiO2/electro-optic polymer waveguide modulators. OPTICS EXPRESS 2014; 22:16418-16423. [PMID: 24977890 DOI: 10.1364/oe.22.016418] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We report the efficient poling of an electro-optic (EO) polymer in a hybrid TiO(2)/electro-optic polymer multilayer waveguide modulator on mesoporous sol-gel silica cladding. The mesoporous sol-gel silica has nanometer-sized pores and a low refractive index of 1.24, which improves mode confinement in the 400-nm-thick EO polymer film in the modulators and prevents optical absorption from the lower Au electrode, thereby resulting in a lower half-wave voltage of the modulators. The half-wave voltage (Vπ) of the hybrid modulator fabricated on the mesoporous sol-gel silica cladding is 6.0 V for an electrode length (Le) of 5 mm at a wavelength of 1550 nm (VπLe product of 3.0 V·cm) using a low-index guest-host EO polymer (in-device EO coefficient of 75 pm/V).
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Yu H, Ying D, Pantouvaki M, Van Campenhout J, Absil P, Hao Y, Yang J, Jiang X. Trade-off between optical modulation amplitude and modulation bandwidth of silicon micro-ring modulators. OPTICS EXPRESS 2014; 22:15178-15189. [PMID: 24977610 DOI: 10.1364/oe.22.015178] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
An analytic model is developed to study the dynamic response of carrier-depletion silicon ring modulators. Its validity is confirmed by a detailed comparison between the modeled and the measured small signal frequency response of a practical device. The model is used to investigate how to maximize the optical modulation amplitude (OMA) and how the OMA could be traded for the bandwidth by tuning the coupling strength and the operation wavelength. Our calculation shows that for a ring modulator with equal RC time constant and photon lifetime, if its operation wavelength shifts from the position of the maximum OMA towards the direction that is away from the resonance, the 3dB modulation bandwidth increases ~2.1 times with a penalty of 3 dB to the OMA.
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Matheisen C, Waldow M, Chmielak B, Sawallich S, Wahlbrink T, Bolten J, Nagel M, Kurz H. Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices. OPTICS EXPRESS 2014; 22:5252-5259. [PMID: 24663865 DOI: 10.1364/oe.22.005252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Silicon is not an electro-optic material by itself but the required second-order optical nonlinearity can be induced by breaking the inversion symmetry of the crystal lattice. Recently, an attractive approach has been demonstrated based on a surface-activation in a CMOS-compatible HBr dry etching process. In this work, we further investigate and quantify the second-order nonlinearity induced by this process. Using THz near-field probing we demonstrate that this simple and versatile process can be applied to locally equip silicon nanophotonic chips with micro-scale areas of electro-optic activity. The realization of a first fully integrated Mach-Zehnder modulator device - based on this process - is applied to quantify the nonlinearity to an effective χ((2)) of 9 ± 1 pm/V. Analysis of the thermal stability of the induced nonlinearity reveals post-processing limitations and paths for further efficiency improvements.
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Zhang X, Hosseini A, Chakravarty S, Luo J, Jen AKY, Chen RT. Wide optical spectrum range, subvolt, compact modulator based on an electro-optic polymer refilled silicon slot photonic crystal waveguide. OPTICS LETTERS 2013; 38:4931-4934. [PMID: 24322169 DOI: 10.1364/ol.38.004931] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We design and demonstrate a compact and low-power, band-engineered, electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW) modulator. The EO polymer is engineered for large EO activity and near-infrared transparency. A PCW step coupler is used for optimum coupling to the slow-light mode of the band-engineered PCW. The half-wave switching voltage is measured to be Vπ = 0.97 ± 0.02 V over an optical spectrum range of 8 nm, corresponding to the effective in-device r(33) of 1199 pm/V and V(π) × L = 0.291 ± 0.006 V × mm in a push-pull configuration. Excluding the slow-light effect, we estimate that the EO polymer is poled with an efficiency of 89 pm/V in the slot.
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Chen L, Wood MG, Reano RM. 12.5 pm/V hybrid silicon and lithium niobate optical microring resonator with integrated electrodes. OPTICS EXPRESS 2013; 21:27003-10. [PMID: 24216923 DOI: 10.1364/oe.21.027003] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
We present a silicon microring resonator with a lithium niobate top cladding and integrated tuning electrodes. Submicrometer thin films of z-cut lithium niobate are bonded to silicon microring resonators via benzocyclobutene. Integrated electrodes are incorporated to confine voltage controlled electric fields within the lithium niobate thin film. The electrode design utilizes thin film metal electrodes and an optically transparent electrode wherein the silicon waveguide core serves as both an optical waveguide medium and as a conductive electrode medium. The hybrid material system combines the electro-optic functionality of lithium niobate with the high index contrast of silicon waveguides, enabling compact low tuning voltage microring resonators. Optical characterization of fabricated devices results in a measured loaded quality factor of 11,500 and a free spectral range of 7.15 nm in the infrared. The demonstrated tunability is 12.5 pm/V, which is over an order of magnitude greater than electrode-free designs.
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Chmielak B, Matheisen C, Ripperda C, Bolten J, Wahlbrink T, Waldow M, Kurz H. Investigation of local strain distribution and linear electro-optic effect in strained silicon waveguides. OPTICS EXPRESS 2013; 21:25324-25332. [PMID: 24150373 DOI: 10.1364/oe.21.025324] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We present detailed investigations of the local strain distribution and the induced second-order optical nonlinearity within strained silicon waveguides cladded with a Si₃N₄ strain layer. Micro-Raman Spectroscopy mappings and electro-optic characterization of waveguides with varying width w(WG) show that strain gradients in the waveguide core and the effective second-order susceptibility χ(2)(yyz) increase with reduced w(WG). For 300 nm wide waveguides a mean effective χ(2)(yyz) of 190 pm/V is achieved, which is the highest value reported for silicon so far. To gain more insight into the origin of the extraordinary large optical second-order nonlinearity of strained silicon waveguides numerical simulations of edge induced strain gradients in these structures are presented and discussed.
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Lou F, Dai D, Thylen L, Wosinski L. Design and analysis of ultra-compact EO polymer modulators based on hybrid plasmonic microring resonators. OPTICS EXPRESS 2013; 21:20041-20051. [PMID: 24105551 DOI: 10.1364/oe.21.020041] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Ultra-compact EO polymer modulators based on hybrid plasmonic microring resonators are proposed, simulated and analyzed. Comparing with Si slot microring modulator, hybrid plasmonic microring modulator shows about 6-times enhancement of the figure of merit when the bending radius is around 510 nm, due to its much larger intrinsic quality factor in sub-micron radius range. Influences of the EO polymer height and Si height on the device's performance are analyzed and optimal design is given. When operating with a bias of 3.6 V, the proposed device has optical modulation amplitude of 0.8 and insertion loss of about 1 dB. The estimated power consumption is about 5 fJ/bit at 100 GHz.
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Prorok S, Petrov AY, Eich M, Luo J, Jen AKY. Trimming of high-Q-factor silicon ring resonators by electron beam bleaching. OPTICS LETTERS 2012; 37:3114-3116. [PMID: 22859103 DOI: 10.1364/ol.37.003114] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
We demonstrate a novel position-resolved resonance trimming strategy for silicon ring resonators. Ring resonators are covered with a chromophore-doped guest host polymer cladding. Illumination of the polymer cladding with high-energy electrons causes a bleaching of the chromophore molecules. Bleaching of the chromophores induces a reduction of the polymer refractive index, which can be used to trim the resonance frequency of the ring resonators. A maximum refractive index change of 0.06 and a TM polarization resonance shift of 16.4 nm have been measured. A Q factor of 20,000 before bleaching remains unaltered after the electron beam exposure process.
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Affiliation(s)
- Stefan Prorok
- Institute of Optical and Electronic Materials, Hamburg University of Technology, Hamburg, Germany. stefan.prorok@tu‑harburg.de
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26
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Ayazi A, Baehr-Jones T, Liu Y, Lim AEJ, Hochberg M. Linearity of silicon ring modulators for analog optical links. OPTICS EXPRESS 2012; 20:13115-13122. [PMID: 22714339 DOI: 10.1364/oe.20.013115] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
We study the nonlinear distortions of a silicon ring modulator based on the carrier depletion effect for analog links. Key sources of modulation nonlinearity are identified and modeled. We find that the most important source of nonlinearity is from the pn junction itself, as opposed to the nonlinear wavelength response of the ring modulator. Spurious free dynamic range for intermodulation distortion of as high as 84 dB.Hz²/₃ is obtained.
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Affiliation(s)
- Ali Ayazi
- Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA.
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27
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Miller DAB. Energy consumption in optical modulators for interconnects. OPTICS EXPRESS 2012; 20 Suppl 2:A293-A308. [PMID: 22418679 DOI: 10.1364/oe.20.00a293] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We analyze energy consumption in optical modulators operated in depletion and intended for low-power interconnect applications. We include dynamic dissipation from charging modulator capacitance and net energy consumption from absorption and photocurrent, both in reverse and small forward bias. We show that dynamic dissipation can be independent of static bias, though only with specific kinds of bias circuits. We derive simple expressions for the effects of photocurrent on energy consumption, valid in both reverse and small forward bias. Though electroabsorption modulators with large reverse bias have substantial energy penalties from photocurrent dissipation, we argue that modulator diodes with thin depletion regions and operating in small reverse and/or forward bias could have little or no such photocurrent energy penalty, even conceivably being more energy-efficient than an ideal loss-less modulator.
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Affiliation(s)
- David A B Miller
- Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305-4088, USA.
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28
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Huang S, Luo J, Yip HL, Ayazi A, Zhou XH, Gould M, Chen A, Baehr-Jones T, Hochberg M, Jen AKY. Efficient poling of electro-optic polymers in thin films and silicon slot waveguides by detachable pyroelectric crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2012; 24:OP42-OP47. [PMID: 22213467 DOI: 10.1002/adma.201102874] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2011] [Indexed: 05/31/2023]
Abstract
Pyroelectric crystals are used as a conformal and detachable electric field source to efficiently pole electro-optic (E-O) polymers in both parallel-plate (transverse) and in-plane (quasi-longitudinal) configurations. Large Pockels coefficients in poled thin films and high tunability of resonance wavelength shift in hybrid polymer silicon slot waveguide ring-resonator modulators have been achieved using this method.
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Affiliation(s)
- Su Huang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, USA
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29
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Chmielak B, Waldow M, Matheisen C, Ripperda C, Bolten J, Wahlbrink T, Nagel M, Merget F, Kurz H. Pockels effect based fully integrated, strained silicon electro-optic modulator. OPTICS EXPRESS 2011; 19:17212-17219. [PMID: 21935084 DOI: 10.1364/oe.19.017212] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We demonstrate for the first time a fully integrated electro-optic modulator based on locally strained silicon rib-waveguides. By depositing a Si3N4 strain layer directly on top of the silicon waveguide the silicon crystal is asymmetrically distorted. Thus its inversion symmetry is broken and a linear electro-optic effect is induced. Electro-optic characterization yields a record high value χ(2)(yyz) = 122 pm/V for the second-order susceptibility of the strained silicon waveguide and a strict linear dependence between the applied modulation voltage V(mod) and the resulting effective index change Δn(eff). Spatially resolved micro-Raman and terahertz (THz) difference frequency generation (DFG) experiments provide in-depth insight into the origin of the electro-optic effect by correlating the local strain distribution with the observed second-order optical activity.
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Affiliation(s)
- Bartos Chmielak
- Institute of Semiconductor Electronics (IHT), RWTH Aachen University, Aachen, Germany.
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31
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Xin M, Png CE, Lim ST, Dixit V, Danner AJ. A high speed electro-optic phase shifter based on a polymer-infiltrated P-S-N diode capacitor. OPTICS EXPRESS 2011; 19:14354-14369. [PMID: 21934799 DOI: 10.1364/oe.19.014354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
A polymer-infiltrated P-S-N diode capacitor configuration is proposed and a high speed electro-optic phase shifter based on a silicon organic hybrid platform is designed and modeled. The structure enables fast carrier depletion in addition to the second order nonlinearity so that a large electro-optic overlapped volume is achievable. Moreover, the device speed can be significantly improved with the introduction of free carriers due to a reduced experienced transient capacitance. The advantages of the diode capacitor structure are highly suitable for application to a class of low aspect ratio slot waveguides where the RC limitation of the radio frequency response is minimized. According to our numerical results, by optimizing both the waveguide geometry and polarization mode, at least 269 GHz 3-dB bandwidth with high efficiency of 5.5 V-cm is achievable. More importantly, the device does not rely on strong optical confinement within the nano-slot, a feature that gives considerable tolerance in the use of nano-fabrication techniques. Finally, the high overlap and energy efficiency of the device can be applied to slow light or optical resonance media for realizing photonic integrated circuits-based green photonics.
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Affiliation(s)
- Maoqing Xin
- Centre for Optoelectronics, Dept. of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore
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