Loss mechanisms of surface plasmon polaritons propagating on a smooth polycrystalline Cu surface

Flexible Plasmonics Using Aluminum and Copper Epitaxial Films on Mica

We demonstrate here the growth of aluminum (Al), copper (Cu), gold (Au), and silver (Ag) epitaxial films on two-dimensional, layered muscovite mica (Mica) substrates via van der Waals (vdW) heteroepitaxy with controllable film thicknesses from a few to hundreds of nanometers. In this approach, the mica thin sheet acts as a flexible and transparent substrate for vdW heteroepitaxy, which allows for large-area formation of atomically smooth, single-crystalline, and ultrathin plasmonic metals without the issue of film dewetting. The high-quality plasmonic metal films grown on mica enable us to design and fabricate well-controlled Al and Cu plasmonic nanostructures with tunable surface plasmon resonances ranging from visible to the near-infrared spectral region. Using these films, two kinds of plasmonic device applications are reported, including (1) plasmonic sensors with high effective index sensitivities based on surface plasmon interferometers fabricated on the Al/Mica film and (2) Cu/Mica nanoslit arrays for plasmonic color filters in the visible and near-infrared regions. Furthermore, we show that the responses of plasmonic nanostructures fabricated on the Mica substrates remain unaltered under large substrate bending conditions. Therefore, the metal-on-mica vdW heteroepitaxy platform is suitable for flexible plasmonics based on their bendable properties.

Enhanced High Performance of a Metasurface Polarizer Through Numerical Analysis of the Degradation Characteristics

This study focuses on the experimental and numerical investigations for the degradation characteristics of a metasurface polarizer. The metasurface has a stacked complementary structure that exhibits a high extinction ratio of the order of 10,000 in the near-infrared region. However, its performance has significantly degraded over time. To clarify the origin of this degradation, the effects of surface roughness and metallic loss are investigated numerically. The degradation is mainly attributed to increase in the loss. These numerical calculations also reveal that the extinction ratio is enhanced by adjusting the thicknesses of the complementary structures to different values. This study paves a way to realize a metasurface polarizer that has a low sensitivity to the time degradation and has a high extinction ratio.

Application of confocal surface wave microscope to self-calibrated attenuation coefficient measurement by Goos-Hänchen phase shift modulation

In this paper, we present a direct method to measure surface wave attenuation arising from both ohmic and coupling losses using our recently developed phase spatial light modulator (phase-SLM) based confocal surface plasmon microscope. The measurement is carried out in the far-field using a phase-SLM to impose an artificial surface wave phase profile in the back focal plane (BFP) of a microscope objective. In other words, we effectively provide an artificially engineered backward surface wave by modulating the Goos Hänchen (GH) phase shift of the surface wave. Such waves with opposing phase and group velocities are well known in acoustics and electromagnetic metamaterials but usually require structured or layered surfaces, here the effective wave is produced externally in the microscope illumination path. Key features of the technique developed here are that it (i) is self-calibrating and (ii) can distinguish between attenuation arising from ohmic loss (k″ _Ω ) and coupling (reradiation) loss (k″ _c ). This latter feature has not been achieved with existing methods. In addition to providing a unique measurement the measurement occurs of over a localized region of a few microns. The results were then validated against the surface plasmons (SP) dip measurement in the BFP and a theoretical model based on a simplified Green's function.

Superior Sensitivity of Copper-Based Plasmonic Biosensors

Plasmonic biosensing has been demonstrated to be a powerful technique for quantitative determination of molecular analytes and kinetic analysis of biochemical reactions. However, interfaces of most plasmonic biosensors are made of noble metals, such as gold and silver, which are not compatible with industrial production technologies. This greatly limits biosensing applications beyond biochemical and pharmaceutical research. Here, we propose and investigate copper-based biosensor chips fully fabricated with a standard complementary metal-oxide-semiconductor (CMOS) process. The protection of thin copper films from oxidation is achieved with SiO₂ and Al₂O₃ dielectric films deposited onto the metal surface. In addition, the deposition of dielectric films with thicknesses of only several tens of nanometers significantly improves the biosensing sensitivity, owing to better localization of electromagnetic field above the biosensing surface. According to surface plasmon resonance (SPR) measurements, the copper biosensor chips coated with thin films of SiO₂ (25 nm) and Al₂O₃ (15 nm) show 55% and 75% higher sensitivity to refractive index changes, respectively, in comparison to pure gold sensor chips. To test biomolecule immobilization, the copper-dielectric biosensor chips are coated with graphene oxide linking layers and used for the selective analysis of oligonucleotide hybridization. The proposed plasmonic biosensors make SPR technology more affordable for various applications and provide the basis for compact biosensors integrated with modern electronic devices.

Characterization of CMOS metal based dielectric loaded surface plasmon waveguides at telecom wavelengths

Dielectric loaded surface plasmon waveguides (DLSPPWs) comprised of polymer ridges deposited on top of CMOS compatible metal thin films are investigated at telecom wavelengths. We perform a direct comparison of the properties of copper (Cu), aluminum (Al), titanium nitride (TiN) and gold (Au) based waveguides by implementing the same plasmonic waveguiding configuration for each metal. The DLSPPWs are characterized by leakage radiation microscopy and a fiber-to-fiber configuration mimicking the cut-back method. We introduce the ohmic loss rate (OLR) to analyze quantitatively the properties of the CMOS metal based DLSPPWs relative to the corresponding Au based waveguides. We show that the Cu, Al and TiN based waveguides feature extra ohmic loss compared to Au of 0.027 dB/μm, 0.18 dB/μm and 0.52 dB/μm at 1550nm respectively. The dielectric function of each metal extracted from ellipsometric spectroscopic measurements is used to model the properties of the DLSP-PWs. We find a fairly good agreement between experimental and modeled DLSPPWs properties except for Al featuring a large surface roughness. Finally, we conclude that TiN based waveguides sustaining intermediate effective index (in the range 1.05-1.25) plasmon modes propagate over very short distances restricting the the use of those modes in practical situations.

High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy

The need for a dedicated spectroscopic technique with nanoscale resolution to characterize SERS substrates pushed us to develop a proof of concept of a functionalized tip-surface enhanced Raman scattering (FTERS) technique. We have been able to map hot spots on semi-continuous gold films; in order to validate our approach we compare our results with photoemission electron microscopy (PEEM) data, the complementary electron microscopy tool to map hot spots on random metallic surfaces. Enhanced Raman intensity maps at high spatial resolution reveal the localisation of hotspots at gaps for many neighboring nanostructures. Finally, we compare our findings with theoretical simulations of the enhancement factor distribution, which confirms a dimer effect as the dominant origin of hot spots.

Plasmofluidic Disk Resonators

Waveguide-coupled silicon ring or disk resonators have been used for optical signal processing and sensing. Large-scale integration of optical devices demands continuous reduction in their footprints, and ultimately they need to be replaced by silicon-based plasmonic resonators. However, few waveguide-coupled silicon-based plasmonic resonators have been realized until now. Moreover, fluid cannot interact effectively with them since their resonance modes are strongly confined in solid regions. To solve this problem, this paper reports realized plasmofluidic disk resonators (PDRs). The PDR consists of a submicrometer radius silicon disk and metal laterally surrounding the disk with a 30-nm-wide channel in between. The channel is filled with fluid, and the resonance mode of the PDR is strongly confined in the fluid. The PDR coupled to a metal-insulator-silicon-insulator-metal waveguide is implemented by using standard complementary metal oxide semiconductor technology. If the refractive index of the fluid increases by 0.141, the transmission spectrum of the waveguide coupled to the PDR of radius 0.9 μm red-shifts by 30 nm. The PDR can be used as a refractive index sensor requiring a very small amount of analyte. Plus, the PDR filled with liquid crystal may be an ultracompact intensity modulator which is effectively controlled by small driving voltage.

Ultralow-Loss CMOS Copper Plasmonic Waveguides

Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips.

Influence of silver grain size, roughness, and profile on the extraordinary fluorescence enhancement capabilities of grating coupled surface plasmon resonance

Silver gratings with different metal film properties and structures were examined to determine their effect on metal enhanced fluorescence.

Investigation of 90° submicrometer radius bends of metal-insulator-silicon-insulator-metal waveguides

We theoretically and experimentally investigate 90° submicrometer radius bends (SRB) of metal-insulator-silicon-insulator-metal (MISIM) waveguides that are plasmonic waveguides fabricated with standard CMOS technology. We focus on the bends of MISIM waveguides with a wide (e.g., 160-220 nm) silicon line. This study shows that the bend efficiently turns the direction of the MISIM waveguide by 90° if its radius is about 0.7 μm. Moreover, we discuss the fact that the bend may be superior to a SRB of a silicon photonic waveguide when it is used to implement a ring resonator with a high quality factor and small volume.

Silicon nitride based plasmonic components for CMOS back-end-of-line integration

Silicon nitride waveguides provide low propagation loss but weak mode confinement due to the relatively small refractive index contrast between the Si₃N₄ core and the SiO2 cladding. On the other hand, metal-insulator-metal (MIM) plasmonic waveguides offer strong mode confinement but large propagation loss. In this work, MIM-like plasmonic waveguides and passive devices based on horizontal Cu-Si₃N₄-Cu or Cu-SiO₂-Si₃N₄-SiO₂-Cu structures are integrated in the conventional Si₃N₄ waveguide circuits using standard CMOS backend processes, and are characterized around 1550-nm telecom wavelengths using the conventional fiber-waveguide-fiber method. The Cu-Si₃N₄(~100 nm)-Cu devices exhibit ~0.78-dB/μm propagation loss for straight waveguides, ~38% coupling efficiency with the conventional 1-μm-wide Si₃N₄ waveguide through a 2-μm-long taper coupler, ~0.2-dB bending loss for sharp 90° bends, and ~0.1-dB excess loss for ultracompact 1 × 2 and 1 × 4 power splitters. Inserting a ~10-nm SiO₂ layer between the Si3N4 core and the Cu cover (i.e., the Cu-SiO2(~10 nm)-Si₃N₄(~100 nm)-SiO2(~10 nm)-Cu devices), the propagation loss and the coupling efficiency are improved to ~0.37 dB/μm and ~52% while the bending loss and the excess loss are degraded to ~3.2 dB and ~2.1 dB, respectively. These experimental results are roughly consistent with the numerical simulation results after taking the influence of possible imperfect fabrication into account. Ultracompact plasmonic ring resonators with 1-μm radius are demonstrated with an extinction ratio of ~18 dB and a quality factor of ~84, close to the theoretical prediction.

Spatiotemporal characterization of SPP pulse propagation in two-dimensional plasmonic focusing devices

The spatiotemporal evolution of a SPP wave packet with femtosecond duration is experimentally investigated in two different plasmonic focusing structures. A two-dimensional reconstruction of the plasmonic field in space and time is possible by the numerical analysis of interferometric time-resolved photoemission electron microscopy data. We show that the time-integrated and time-resolved view onto the wave packet dynamics allow one to characterize and compare the capabilities of two-dimensional components for use in plasmonic devices operating with ultrafast pulses.

Characterizations of realized metal-insulator-silicon-insulator-metal waveguides and nanochannel fabrication via insulator removal

We investigate experimentally metal-insulator-silicon-insulator-metal (MISIM) waveguides that are fabricated by using fully standard CMOS technology. They are hybrid plasmonic waveguides, and they have a feature that their insulator is replaceable with functional material. We explain a fabrication process for them and discuss fabrication results based on 8-inch silicon-on-insulator wafers. We measured the propagation characteristics of the MISIM waveguides that were actually fabricated to be connected to Si photonic waveguides through symmetric and asymmetric couplers. When incident light from an optical source has transverse electric (TE) polarization and its wavelength is 1318 or 1554 nm, their propagation losses are between 0.2 and 0.3 dB/μm. Excess losses due to the symmetric couplers are around 0.5 dB, which are smaller than those due to the asymmetric couplers. Additional measurement results indicate that the MISIM waveguide supports a TE-polarized hybrid plasmonic mode. Finally, we explain a process of removing the insulator without affecting the remaining MISIM structure to fabricate ~30-nm-wide nanochannels which may be filled with functional material.

Photonic signal processing on electronic scales: electro-optical field-effect nanoplasmonic modulator

We develop a highly efficient approach for the modulation of photonic signals at the nanoscale, combining an ultrasubwavelength plasmonic guiding scheme with a robust electroabsorption effect in degenerate semiconductors. We numerically demonstrate an active electro-optical field-effect nanoplasmonic modulator with a revolutionary size of just 25 × 30 × 100 nm(3), providing signal extinction ratios as high as 2 at switching voltages of only 1 V. The design is compatible with complementary metal-oxide-semiconductor (CMOS) technology and allows low-loss insertion in standard plasmonic and Si-photonic circuitry.

MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

We study the electro optical properties of a Metal-Nitride-Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si(3)N(4) layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.μm(-1)), in good agreement with predictions using ellipsometric optical constants of Cu.