Characterizations of realized metal-insulator-silicon-insulator-metal waveguides and nanochannel fabrication via insulator removal

Mid-infrared subwavelength modulator based on grating-assisted coupling of a hybrid plasmonic waveguide mode to a graphene plasmon

This work reports a mid-infrared modulator based on a hybrid plasmonic waveguide with graphene on a grating in its slot region. The modulator utilizes a graphene plasmon for electro-optic tuning in a more practical and effective way than graphene-plasmon-based waveguide devices studied up to now. The hybrid plasmonic waveguide can be easily and efficiently integrated with input and output photonic waveguides. It supports a hybrid plasmonic waveguide mode and a graphene-plasmon-based waveguide mode. Grating-assisted coupling of the former to the latter in it is demonstrated to work successfully even though the two modes have significantly different propagation constants and losses. Theoretical investigation of the modulator shows that the coupling via the grating of length 5.92 μm generates a deep rejection band at a wavelength of 8.014 μm in the transmission spectrum of the output photonic waveguide of the modulator. With the graphene chemical potential tuned between 0.6 eV and 0.65 eV, the transmission at the wavelength is modulated between -27 dB and -1.8 dB. The subwavelength modulator, which may have a large bandwidth and small energy consumption, is expected to play a key role in free-space communications and sensing requiring mid-infrared integrated photonics.

Plasmofluidic Disk Resonators

Waveguide-coupled silicon ring or disk resonators have been used for optical signal processing and sensing. Large-scale integration of optical devices demands continuous reduction in their footprints, and ultimately they need to be replaced by silicon-based plasmonic resonators. However, few waveguide-coupled silicon-based plasmonic resonators have been realized until now. Moreover, fluid cannot interact effectively with them since their resonance modes are strongly confined in solid regions. To solve this problem, this paper reports realized plasmofluidic disk resonators (PDRs). The PDR consists of a submicrometer radius silicon disk and metal laterally surrounding the disk with a 30-nm-wide channel in between. The channel is filled with fluid, and the resonance mode of the PDR is strongly confined in the fluid. The PDR coupled to a metal-insulator-silicon-insulator-metal waveguide is implemented by using standard complementary metal oxide semiconductor technology. If the refractive index of the fluid increases by 0.141, the transmission spectrum of the waveguide coupled to the PDR of radius 0.9 μm red-shifts by 30 nm. The PDR can be used as a refractive index sensor requiring a very small amount of analyte. Plus, the PDR filled with liquid crystal may be an ultracompact intensity modulator which is effectively controlled by small driving voltage.

Adiabatic Nanofocusing in Hybrid Gap Plasmon Waveguides on the Silicon-on-Insulator Platform

We present an experimental demonstration of a new class of hybrid gap plasmon waveguides on the silicon-on-insulator (SOI) platform. Created by the hybridization of the plasmonic mode of a gap in a thin metal sheet and the transverse-electric (TE) photonic mode of an SOI slab, this waveguide is designed for efficient adiabatic nanofocusing simply by varying the gap width. For gap widths greater than 100 nm, the mode is primarily photonic in character and propagation lengths can be many tens of micrometers. For gap widths below 100 nm, the mode becomes plasmonic in character with field confinement predominantly within the gap region and with propagation lengths of a few microns. We estimate the electric field intensity enhancement in hybrid gap plasmon waveguide tapers at 1550 nm by three-photon absorption of selectively deposited CdSe/ZnS quantum dots within the gap. Here, we show electric field intensity enhancements of up to 167 ± 26 for a 24 nm gap, proving the viability of low loss adiabatic nanofocusing on a commercially relevant photonics platform.

Utilization of Field Enhancement in Plasmonic Waveguides for Subwavelength Light-Guiding, Polarization Handling, Heating, and Optical Sensing

Plasmonic nanostructures have attracted intensive attention for many applications in recent years because of the field enhancement at the metal/dielectric interface. First, this strong field enhancement makes it possible to break the diffraction limit and enable subwavelength optical waveguiding, which is desired for nanophotonic integrated circuits with ultra-high integration density. Second, the field enhancement in plasmonic nanostructures occurs only for the polarization mode whose electric field is perpendicular to the metal/dielectric interface, and thus the strong birefringence is beneficial for realizing ultra-small polarization-sensitive/selective devices, including polarization beam splitters, and polarizers. Third, plasmonic nanostructures provide an excellent platform of merging electronics and photonics for some applications, e.g., thermal tuning, photo-thermal detection, etc. Finally, the field enhancement at the metal/dielectric interface helps a lot to realize optical sensors with high sensitivity when introducing plasmonic nanostrutures. In this paper, we give a review for recent progresses on the utilization of field enhancement in plasmonic nanostructures for these applications, e.g., waveguiding, polarization handling, heating, as well as optical sensing.

Investigation of 90° submicrometer radius bends of metal-insulator-silicon-insulator-metal waveguides

We theoretically and experimentally investigate 90° submicrometer radius bends (SRB) of metal-insulator-silicon-insulator-metal (MISIM) waveguides that are plasmonic waveguides fabricated with standard CMOS technology. We focus on the bends of MISIM waveguides with a wide (e.g., 160-220 nm) silicon line. This study shows that the bend efficiently turns the direction of the MISIM waveguide by 90° if its radius is about 0.7 μm. Moreover, we discuss the fact that the bend may be superior to a SRB of a silicon photonic waveguide when it is used to implement a ring resonator with a high quality factor and small volume.

Towards CMOS-compatible nanophotonics: ultra-compact modulators using alternative plasmonic materials

We propose several planar layouts of ultra-compact plasmonic modulators that utilize alternative plasmonic materials such as transparent conducting oxides and titanium nitride. The modulation is achieved by tuning the carrier concentration in a transparent conducting oxide layer into and out of the plasmon resonance with an applied electric field. The resonance significantly increases the absorption coefficient of the modulator, which enables larger modulation depth. We show that an extinction ratio of 46 dB/µm can be achieved, allowing for a 3-dB modulation depth in much less than one micron at the telecommunication wavelength. Our multilayer structures can be integrated with existing plasmonic and photonic waveguides as well as novel semiconductor-based hybrid photonic/electronic circuits.

Silicon nitride based plasmonic components for CMOS back-end-of-line integration

Silicon nitride waveguides provide low propagation loss but weak mode confinement due to the relatively small refractive index contrast between the Si₃N₄ core and the SiO2 cladding. On the other hand, metal-insulator-metal (MIM) plasmonic waveguides offer strong mode confinement but large propagation loss. In this work, MIM-like plasmonic waveguides and passive devices based on horizontal Cu-Si₃N₄-Cu or Cu-SiO₂-Si₃N₄-SiO₂-Cu structures are integrated in the conventional Si₃N₄ waveguide circuits using standard CMOS backend processes, and are characterized around 1550-nm telecom wavelengths using the conventional fiber-waveguide-fiber method. The Cu-Si₃N₄(~100 nm)-Cu devices exhibit ~0.78-dB/μm propagation loss for straight waveguides, ~38% coupling efficiency with the conventional 1-μm-wide Si₃N₄ waveguide through a 2-μm-long taper coupler, ~0.2-dB bending loss for sharp 90° bends, and ~0.1-dB excess loss for ultracompact 1 × 2 and 1 × 4 power splitters. Inserting a ~10-nm SiO₂ layer between the Si3N4 core and the Cu cover (i.e., the Cu-SiO2(~10 nm)-Si₃N₄(~100 nm)-SiO2(~10 nm)-Cu devices), the propagation loss and the coupling efficiency are improved to ~0.37 dB/μm and ~52% while the bending loss and the excess loss are degraded to ~3.2 dB and ~2.1 dB, respectively. These experimental results are roughly consistent with the numerical simulation results after taking the influence of possible imperfect fabrication into account. Ultracompact plasmonic ring resonators with 1-μm radius are demonstrated with an extinction ratio of ~18 dB and a quality factor of ~84, close to the theoretical prediction.