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Mallem SPR, Puneetha P, Lee DY, An SJ. Strain-Modulated Flexible Bio-Organic/Graphene/PET Sensors Based on DNA-Curcumin Biopolymer. Biomolecules 2024; 14:698. [PMID: 38927101 PMCID: PMC11201641 DOI: 10.3390/biom14060698] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2024] [Revised: 06/12/2024] [Accepted: 06/12/2024] [Indexed: 06/28/2024] Open
Abstract
In recent years, there has been growing interest in the development of metal-free, environmentally friendly, and cost-effective biopolymer-based piezoelectric strain sensors (bio-PSSs) for flexible applications. In this study, we have developed a bio-PSS based on pure deoxyribonucleic acid (DNA) and curcumin materials in a thin-film form and studied its strain-induced current-voltage characteristics based on piezoelectric phenomena. The bio-PSS exhibited flexibility under varying compressive and tensile loads. Notably, the sensor achieved a strain gauge factor of 407 at an applied compressive strain of -0.027%, which is 8.67 times greater than that of traditional metal strain gauges. Furthermore, the flexible bio-PSS demonstrated a rapid response under a compressive strain of -0.08%. Our findings suggest that the proposed flexible bio-PSS holds significant promise as a motion sensor, addressing the demand for environmentally safe, wearable, and flexible strain sensor applications.
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Affiliation(s)
- Siva Pratap Reddy Mallem
- Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea;
| | - Peddathimula Puneetha
- Department of Robotics and Intelligent Machine Engineering, College of Mechanical and IT Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea;
| | - Dong Yeon Lee
- Department of Robotics and Intelligent Machine Engineering, College of Mechanical and IT Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea;
| | - Sung Jin An
- Department of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea
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Basyooni MA, Zaki SE, Shaban M, Eker YR, Yilmaz M. Efficient MoWO 3/VO 2/MoS 2/Si UV Schottky photodetectors; MoS 2 optimization and monoclinic VO 2 surface modifications. Sci Rep 2020; 10:15926. [PMID: 32985575 PMCID: PMC7522211 DOI: 10.1038/s41598-020-72990-9] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/26/2020] [Accepted: 09/09/2020] [Indexed: 11/21/2022] Open
Abstract
The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. MoWO3/VO2/MoS2 photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO3/VO2/MoS2/Si with MoS2 deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO2 layer on MoS2/Si causes a redshift and intensive MoS2 Raman peaks. Interestingly, the incorporation of VO2 dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO2/(30 s)MoS2/Si from < 1 to > 1. By increasing the deposition time of MoS2 from 60 to 180 s, the relative intensity of the B-exciton/A-exciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO2/(60 s)MoS2/Si structure. Both the VO2/(60 s)MoS2/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS2/Si structure. The MoWO3/VO2/(60 s)MoS2/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 × 108 Jones detectivity, and ~ 1.0 × 1010 quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at ~ 40 °C.
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Affiliation(s)
- Mohamed A Basyooni
- Nanophysics Laboratory, Department of NanoScience and NanoEngineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya, 42060, Turkey
- Science and Technology Research and Application Center (BITAM), University of Necmettin Erbakan, Konya, 42060, Turkey
| | - Shrouk E Zaki
- Nanophysics Laboratory, Department of NanoScience and NanoEngineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya, 42060, Turkey
| | - Mohamed Shaban
- Nanophotonics and Applications Laboratory, Department of Physics, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt.
- Department of Physics, Faculty of Science, Islamic University in Almadinah Almonawara, Almadinah Almonawara, 42351, Saudi Arabia.
| | - Yasin Ramazan Eker
- Department of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya, 42060, Turkey
- Science and Technology Research and Application Center (BITAM), University of Necmettin Erbakan, Konya, 42060, Turkey
| | - Mucahit Yilmaz
- Nanophysics Laboratory, Department of NanoScience and NanoEngineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya, 42060, Turkey
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Dayan O, Gencer Imer A, Al-Sehemi AG, Özdemir N, Dere A, Şerbetçi Z, Al-Ghamdi AA, Yakuphanoglu F. Photoresponsivity and photodetectivity properties of copper complex-based photodiode. J Mol Struct 2020. [DOI: 10.1016/j.molstruc.2019.127062] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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Abdel-Khalek H, El-Samahi M, El Salam MA, El-Mahalawy AM. Fabrication and performance evaluation of ultraviolet photodetector based on organic /inorganic heterojunction. CURRENT APPLIED PHYSICS 2018; 18:1496-1506. [DOI: 10.1016/j.cap.2018.09.006] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
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Mitta SB, Dugasani SR, Reddeppa M, Vellampatti S, Gnapareddy B, Kim MD, Park SH. DNA nanostructures doped with lanthanide ions for highly sensitive UV photodetectors. Colloids Surf B Biointerfaces 2018; 175:212-220. [PMID: 30530233 DOI: 10.1016/j.colsurfb.2018.11.089] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2018] [Revised: 11/26/2018] [Accepted: 11/30/2018] [Indexed: 12/18/2022]
Abstract
Deoxyribonucleic acid (DNA) and lanthanide ions (Ln3+) exhibit exceptional optical properties that are applicable to the development of nanoscale devices and sensors. Although DNA nanostructures and Ln3+ ions have been investigated for use in the current state of technology for more than a few decades, researchers have yet to develop DNA and Ln3+ based ultra-violet (UV) photodetectors. Here, we fabricate Ln3+ (such as holmium (Ho3+), praseodymium (Pr3+), and ytterbium (Yb3+))‒doped double crossover (DX)‒DNA lattices through substrate-assisted growth and salmon DNA (SDNA) thin films via a simple drop-casting method on oxygen (O2) plasma-treated substrates for high performance UV photodetectors. Topological (AFM), optical (UV-vis absorption and FTIR), spectroscopic (XPS), and electrical (I‒V and photovoltage) measurements of the DX‒DNA and SDNA thin films doped with various concentrations of Ln3+ ([Ln3+]) are explored. From the AFM analysis, the optimum concentrations of various Ln3+ ([Ln3+]O) are estimated (where the phase transition of Ln3+‒doped DX‒DNA lattices takes place from crystalline to amorphous) as 1.2 mM for Ho3+, 1.5 mM for Pr3+, and 1.5 mM for Yb3+. The binding modes and chemical states are evaluated through optical and spectroscopic analysis. From UV-vis absorption studies, we found that as the [Ln3+] was increased, the absorption intensity decreased up to [Ln3+]O, and increased above [Ln3+]O. The variation in FTIR peak intensities in the nucleobase and phosphate regions, and the changes in XPS peak intensities and peak positions detected in the N 1 s and P 2p core spectra of Ln3+‒doped SDNA thin films clearly indicate that the Ln3+ ions are properly bound between the bases (through chemical intercalation) and to the phosphate backbone (through electrostatic interactions) of the DNA molecules. Finally, the I‒V characteristics and time-dependent photovoltage of Ln3+‒doped SDNA thin films are measured both in the dark and under UV LED illuminations (λLED = 382 nm) at various illumination powers. The photocurrent and photovoltage of Ln3+‒doped SDNA thin films are enhanced up to the [Ln3+]O compared to pristine SDNA due to the charge carriers generated from both SDNA and Ln3+ ions upon the absorption of light. From our observations, the photovoltages as function of illumination power suggest higher responsivities, and the photovoltages as function of time are almost constant which indicates the stability and retention characteristics of the Ln3+‒doped SDNA thin films. Hence, our method which provides an efficient doping of Ln3+ into the SDNA with a simple fabrication process might be useful in the development of high-performance optoelectronic devices and sensors.
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Affiliation(s)
- Sekhar Babu Mitta
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sreekantha Reddy Dugasani
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Maddaka Reddeppa
- Department of Physics, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Srivithya Vellampatti
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Bramaramba Gnapareddy
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Moon-Deock Kim
- Department of Physics, Chungnam National University, Daejeon, 34134, Republic of Korea.
| | - Sung Ha Park
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
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Abdel-Khalek H, Shalaan E, Abd-El Salam M, El-Mahalawy AM. Effect of illumination intensity on the characteristics of Cu(acac)2/n-Si photodiode. SYNTHETIC METALS 2018; 245:223-236. [DOI: 10.1016/j.synthmet.2018.09.009] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
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Zoromba MS, Abdel-Aziz MH, Bassyouni M, Bahaitham H, Al-Hossainy AF. Poly(o-phenylenediamine) thin film for organic solar cell applications. J Solid State Electrochem 2018. [DOI: 10.1007/s10008-018-4077-x] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
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Polley N, Sarkar PK, Chakrabarti S, Lemmens P, Pal SK. DNA Biomaterial Based Fiber Optic Sensor: Characterization and Application for Monitoringin situMercury Pollution. ChemistrySelect 2016. [DOI: 10.1002/slct.201600391] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Nabarun Polley
- Department of Chemical, Biological and Macromolecular Sciences; S. N. Bose National Centre for Basic Sciences; Block JD, Sector III, Salt Lake Kolkata 700 106 India
| | - Probir Kumar Sarkar
- Department of Chemical, Biological and Macromolecular Sciences; S. N. Bose National Centre for Basic Sciences; Block JD, Sector III, Salt Lake Kolkata 700 106 India
| | - Subhananda Chakrabarti
- Dept. of Electrical Engineering; Indian Institute of Technology Bombay, Powai; Mumbai 400 076, Maharashtra India
| | - Peter Lemmens
- Institute for Condensed Matter Physics; TU Braunschweig; Mendelssohnsstr 3 38106 Braunschweig Germany
| | - Samir Kumar Pal
- Department of Chemical, Biological and Macromolecular Sciences; S. N. Bose National Centre for Basic Sciences; Block JD, Sector III, Salt Lake Kolkata 700 106 India
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Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. PLoS One 2016; 11:e0145423. [PMID: 26799703 PMCID: PMC4723132 DOI: 10.1371/journal.pone.0145423] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2015] [Accepted: 12/03/2015] [Indexed: 11/19/2022] Open
Abstract
Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.
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