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Microstructure effects on the phase transition behavior of a prototypical quantum material. Sci Rep 2022; 12:10464. [PMID: 35729245 PMCID: PMC9213476 DOI: 10.1038/s41598-022-13872-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Accepted: 05/30/2022] [Indexed: 11/08/2022] Open
Abstract
Materials with insulator-metal transitions promise advanced functionalities for future information technology. Patterning on the microscale is key for miniaturized functional devices, but material properties may vary spatially across microstructures. Characterization of these miniaturized devices requires electronic structure probes with sufficient spatial resolution to understand the influence of structure size and shape on functional properties. The present study demonstrates the use of imaging soft X-ray absorption spectroscopy with a spatial resolution better than 2 \documentclass[12pt]{minimal}
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\begin{document}$$\upmu$$\end{document}μm to study the insulator-metal transition in vanadium dioxide thin-film microstructures. This novel technique reveals that the transition temperature for the conversion from insulating to metallic vanadium dioxide is lowered by 1.2 K ± 0.4 K close to the structure edges compared to the center. Facilitated strain release during the phase transition is discussed as origin of the observed behavior. The experimental approach enables a detailed understanding of how the electronic properties of quantum materials depend on their patterning at the micrometer scale.
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Hwang IH, Park CI, Yeo S, Sun CJ, Han SW. Decoupling the metal insulator transition and crystal field effects of VO 2. Sci Rep 2021; 11:3135. [PMID: 33542342 PMCID: PMC7862372 DOI: 10.1038/s41598-021-82588-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2020] [Accepted: 01/18/2021] [Indexed: 11/08/2022] Open
Abstract
VO2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) with a dramatic change of conductivity accompanied by a first-order structural phase transition (SPT) near room temperature. The origin of the MIT is still controversial and there is ongoing debate over whether an SPT induces the MIT and whether the Tc can be engineered using artificial parameters. We examined the electrical and local structural properties of Cr- and Co-ion implanted VO2 (Cr-VO2 and Co-VO2) films using temperature-dependent resistance and X-ray absorption fine structure (XAFS) measurements at the V K edge. The temperature-dependent electrical resistance measurements of both Cr-VO2 and Co-VO2 films showed sharp MIT features. The Tc values of the Cr-VO2 and Co-VO2 films first decreased and then increased relative to that of pristine VO2 as the ion flux was increased. The pre-edge peak of the V K edge from the Cr-VO2 films with a Cr ion flux ≥ 1013 ions/cm2 showed no temperature-dependent behavior, implying no changes in the local density of states of V 3d t2g and eg orbitals during MIT. Extended XAFS (EXAFS) revealed that implanted Cr and Co ions and their tracks caused a substantial amount of structural disorder and distortion at both vanadium and oxygen sites. The resistance and XAFS measurements revealed that VO2 experiences a sharp MIT when the distance of V-V pairs undergoes an SPT without any transitions in either the VO6 octahedrons or the V 3d t2g and eg states. This indicates that the MIT of VO2 occurs with no changes of the crystal fields.
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Affiliation(s)
- In-Hui Hwang
- Department of Physics Education, Institute of Fusion Science, and Institute of Science Education, Jeonbuk National University, Jeonju, 54896, Korea
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Chang-In Park
- Department of Physics Education, Institute of Fusion Science, and Institute of Science Education, Jeonbuk National University, Jeonju, 54896, Korea
| | - Sunmog Yeo
- Korea Atomic Energy Research Institute, KOMAC, Miraero 181, Gyoungju, 38180, Korea
| | - Cheng-Jun Sun
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Sang-Wook Han
- Department of Physics Education, Institute of Fusion Science, and Institute of Science Education, Jeonbuk National University, Jeonju, 54896, Korea.
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Calais T, Valdivia y Alvarado P. Advanced functional materials for soft robotics: tuning physicochemical properties beyond rigidity control. ACTA ACUST UNITED AC 2019. [DOI: 10.1088/2399-7532/ab4f9d] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
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Lee JW, Park J, Kwon H, Hong WK, Kim JK, Cho J. Self-protective GaInN-based light-emitting diodes with VO 2 nanowires. NANOSCALE 2019; 11:18444-18448. [PMID: 31576892 DOI: 10.1039/c9nr04227j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We presented a new functional GaInN-based light-emitting diode (LED) that is capable of protecting itself from unwanted thermal damage (a so-called self-protective LED). This functionality was achieved by incorporating VO2 nanowires on the LED chip. VO2 nanowires, as metal-insulator transition materials, show a phase transition from insulating to metallic at a characteristic transition temperature. By placing a VO2 nanowire between the n- and p-contacts of an LED, a parallel circuit was formed with the existing diode. As the VO2 nanowire became metal-like at its characteristic temperature, it induced a short-circuit state in the device, protecting the LED from heat damage at elevated temperatures. Details on the self-protective LED were elucidated, from a conceptual description to experimental proof.
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Affiliation(s)
- Jong Won Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
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Liu H, Lu J, Wang XR. Metamaterials based on the phase transition of VO 2. NANOTECHNOLOGY 2018; 29:024002. [PMID: 29231183 DOI: 10.1088/1361-6528/aa9cb1] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In this article, we present a comprehensive review on recent research progress in design and fabrication of active tunable metamaterials and devices based on phase transition of VO2. Firstly, we introduce mechanisms of the metal-to-insulator phase transition (MIPT) in VO2 investigated by ultrafast THz spectroscopies. By analyzing the THz spectra, the evolutions of MIPT in VO2 induced by different external excitations are described. The superiorities of using VO2 as building blocks to construct highly tunable metamaterials are discussed. Subsequently, the recently demonstrated metamaterial devices based on VO2 are reviewed. These metamaterials devices are summarized and described in the categories of working frequency. In each working frequency range, representative metamaterials based on VO2 with different architectures and functionalities are reviewed and the contributions of the MIPT of VO2 are emphasized. Finally, we conclude the recent reports and provide a prospect on the strategies of developing future tunable metamaterials based on VO2.
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Affiliation(s)
- Hongwei Liu
- Jiangsu Key Lab on Opto-Electronic Technology, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China
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Hwang IH, Jin Z, Park CI, Han SW. The influence of structural disorder and phonon on metal-to-insulator transition of VO 2. Sci Rep 2017; 7:14802. [PMID: 29093503 PMCID: PMC5666023 DOI: 10.1038/s41598-017-14235-w] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2017] [Accepted: 10/06/2017] [Indexed: 11/09/2022] Open
Abstract
We used temperature-dependent x-ray absorption fine structure (XAFS) measurements to examine the local structural properties around vanadium atoms at the V K edge from VO2 films. A direct comparison of the simultaneously-measured resistance and XAFS regarding the VO2 films showed that the thermally-driven structural transition occurred prior to the resistance transition during a heating, while this change simultaneously occured during a cooling. Extended-XAFS (EXAFS) analysis revealed significant increases of the Debye-Waller factors of the V-O and V-V pairs in the {111} direction of the R-phase VO2 that are due to the phonons of the V-V arrays along the same direction in a metallic phase. The existance of a substantial amount of structural disorder on the V-V pairs along the c-axis in both M1 and R phases indicates the structural instability of V-V arrays in the axis. The anomalous structural disorder that was observed on all atomic sites at the structural phase transition prevents the migration of the V 3d1 electrons, resulting in a Mott insulator in the M2-phase VO2.
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Affiliation(s)
- In-Hui Hwang
- Department of Physics Education and Institute of Fusion Science, Jeonbuk(Chonbuk) National University, Jeonju, 54896, Korea
| | - Zhenlan Jin
- Department of Physics Education and Institute of Fusion Science, Jeonbuk(Chonbuk) National University, Jeonju, 54896, Korea
| | - Chang-In Park
- Department of Physics Education and Institute of Fusion Science, Jeonbuk(Chonbuk) National University, Jeonju, 54896, Korea
| | - Sang-Wook Han
- Department of Physics Education and Institute of Fusion Science, Jeonbuk(Chonbuk) National University, Jeonju, 54896, Korea.
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Broadband modulation of terahertz waves through electrically driven hybrid bowtie antenna-VO 2 devices. Sci Rep 2017; 7:12725. [PMID: 28983089 PMCID: PMC5629206 DOI: 10.1038/s41598-017-13085-w] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2017] [Accepted: 09/18/2017] [Indexed: 11/24/2022] Open
Abstract
Broadband modulation of terahertz (THz) light is experimentally realized through the electrically driven metal-insulator phase transition of vanadium dioxide (VO2) in hybrid metal antenna-VO2 devices. The devices consist of VO2 active layers and bowtie antenna arrays, such that the electrically driven phase transition can be realized by applying an external voltage between adjacent metal wires extended to a large area array. The modulation depth of the terahertz light can be initially enhanced by the metal wires on top of VO2 and then improved through the addition of specific bowties in between the wires. As a result, a terahertz wave with a large beam size (~10 mm) can be modulated within the measurable spectral range (0.3–2.5 THz) with a frequency independent modulation depth as high as 0.9, and the minimum amplitude transmission down to 0.06. Moreover, the electrical switch on/off phase transition depends very much on the size of the VO2 area, indicating that smaller VO2 regions lead to higher modulation speeds and lower phase transition voltages. With the capabilities in actively tuning the beam size, modulation depth, modulation bandwidth as well as the modulation speed of THz waves, our study paves the way in implementing multifunctional components for terahertz applications.
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Dahal K, Zhang Q, Wang Y, Mishra IK, Ren Z. V–VO2core–shell structure for potential thermal switching. RSC Adv 2017. [DOI: 10.1039/c7ra05766k] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
An increase in thermal conductivity is achieved by increasing electronic thermal conductivityviamodulation doping, resulting from solid–solid phase transition.
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Affiliation(s)
- Keshab Dahal
- Department of Physics and TcSUH
- University of Houston
- Houston
- USA
| | - Qian Zhang
- Department of Physics and TcSUH
- University of Houston
- Houston
- USA
- Department of Materials Science and Engineering
| | - Yumei Wang
- Department of Physics and TcSUH
- University of Houston
- Houston
- USA
- Beijing National Laboratory for Condensed Matter Physics
| | | | - Zhifeng Ren
- Department of Physics and TcSUH
- University of Houston
- Houston
- USA
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Teixeira D, Quesada-Cabrera R, Powell MJ, Goh GKL, Sankar G, Parkin IP, Palgrave RG. Particle size, morphology and phase transitions in hydrothermally produced VO2(D). NEW J CHEM 2017. [DOI: 10.1039/c7nj02165h] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
An easy and reproducible method to synthesise thermochromic VO2[M] via VO2[D] at a low calcination temperature.
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Affiliation(s)
- Diana Teixeira
- Department of Chemistry, Materials Chemistry Centre
- University College London
- London WC1H 0AJ
- UK
- Institute of Materials Research and Engineering
| | - Raul Quesada-Cabrera
- Department of Chemistry, Materials Chemistry Centre
- University College London
- London WC1H 0AJ
- UK
| | - Michael J. Powell
- Department of Chemistry, Materials Chemistry Centre
- University College London
- London WC1H 0AJ
- UK
| | - G. K. L. Goh
- Institute of Materials Research and Engineering
- Agency for Science, Technology and Research (A*STAR)
- Singapore 138634
- Singapore
| | - G. Sankar
- Department of Chemistry, Materials Chemistry Centre
- University College London
- London WC1H 0AJ
- UK
| | - I. P. Parkin
- Department of Chemistry, Materials Chemistry Centre
- University College London
- London WC1H 0AJ
- UK
| | - R. G. Palgrave
- Department of Chemistry, Materials Chemistry Centre
- University College London
- London WC1H 0AJ
- UK
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Yoon J, Kim H, Chen X, Tamura N, Mun BS, Park C, Ju H. Controlling the Temperature and Speed of the Phase Transition of VO2 Microcrystals. ACS APPLIED MATERIALS & INTERFACES 2016; 8:2280-2286. [PMID: 26713678 DOI: 10.1021/acsami.5b11144] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We investigated the control of two important parameters of vanadium dioxide (VO2) microcrystals, the phase transition temperature and speed, by varying microcrystal width. By using the reflectivity change between insulating and metallic phases, phase transition temperature is measured by optical microscopy. As the width of square cylinder-shaped microcrystals decreases from ∼70 to ∼1 μm, the phase transition temperature (67 °C for bulk) varied as much as 26.1 °C (19.7 °C) during heating (cooling). In addition, the propagation speed of phase boundary in the microcrystal, i.e., phase transition speed, is monitored at the onset of phase transition by using the high-speed resistance measurement. The phase transition speed increases from 4.6 × 10(2) to 1.7 × 10(4) μm/s as the width decreases from ∼50 to ∼2 μm. While the statistical description for a heterogeneous nucleation process explains the size dependence on phase transition temperature of VO2, the increase of effective thermal exchange process is responsible for the enhancement of phase transition speed of small VO2 microcrystals. Our findings not only enhance the understanding of VO2 intrinsic properties but also contribute to the development of innovative electronic devices.
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Affiliation(s)
- Joonseok Yoon
- Department of Physics, Yonsei University , Seoul 03722, Republic of Korea
| | - Howon Kim
- Department of Physics, Yonsei University , Seoul 03722, Republic of Korea
| | - Xian Chen
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology , Hong Kong 999077, China
| | - Nobumichi Tamura
- Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | | | - Changwoo Park
- Division of Applied Chemistry and Biotechnology, Hanbat National University , Daejeon 34158, Republic of Korea
- Advanced Nano Products , Sejong, 30077, Republic of Korea
| | - Honglyoul Ju
- Department of Physics, Yonsei University , Seoul 03722, Republic of Korea
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