Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator

Highly efficient silicon modulator via a slow-wave Michelson structure

The weak free carrier dispersion effect significantly hinders the adoption of silicon modulators in low-power applications. While various structures have been demonstrated to reduce the half-wave voltage, it is always challenging to balance the trade-off between modulation efficiency and the bandwidth. Here, we demonstrated a slow-wave Michelson structure with 1-mm-long active length. The modulator was designed at the emerging 2-μm wave band which has a stronger free carrier effect. A record high modulation efficiency of 0.29 V·cm was achieved under a carrier depletion mode. The T-rail traveling wave electrodes were designed to improve the modulation bandwidth to 13.3 GHz. Up to 20 Gb/s intensity modulation was achieved at a wavelength of 1976 nm.

Silicon-Organic Hybrid Electro-Optic Modulator and Microwave Photonics Signal Processing Applications

Electro-optic modulator (EOM) is one of the key devices of high-speed optical fiber communication systems and ultra-wideband microwave photonic systems. Silicon-organic hybrid (SOH) integration platform combines the advantages of silicon photonics and organic materials, providing a high electro-optic effect and compact structure for photonic integrated devices. In this paper, we present an SOH-integrated EOM with comprehensive investigation of EOM structure design, silicon waveguide fabrication with Slot structure, on-chip poling of organic electro-optic material, and characterization of EO modulation response. The SOH-integrated EOM is measured with 3 dB bandwidth of over 50 GHz and half-wave voltage length product of 0.26 V·cm. Furthermore, we demonstrate a microwave photonics phase shifter by using the fabricated SOH-integrated dual parallel Mach-Zehnder modulator. The phase shift range of 410° is completed from 8 GHz to 26 GHz with a power consumption of less than 38 mW.

Slow-light silicon modulator with 110-GHz bandwidth

Silicon modulators are key components to support the dense integration of electro-optic functional elements for various applications. Despite numerous advances in promoting the modulation speed, a bandwidth ceiling emerges in practices and becomes an obstacle toward Tbps-level throughput on a single chip. Here, we demonstrate a compact pure silicon modulator that shatters present bandwidth ceiling to 110 gigahertz. The proposed modulator is built on a cascade corrugated waveguide architecture, which gives rise to a slow-light effect. By comprehensively balancing a series of merits, the modulators can benefit from the slow light for better efficiency and compact size while remaining sufficiently high bandwidth. Consequently, we realize a 110-gigahertz modulator with 124-micrometer length, enabling 112 gigabits per second on-off keying operation. Our work proves that silicon modulators with 110 gigahertz are feasible, thus shedding light on its potentials in ultrahigh bandwidth applications such as optical interconnection and photonic machine learning.

Design of a silicon Mach-Zehnder modulator via deep learning and evolutionary algorithms

As an essential block in optical communication systems, silicon (Si) Mach-Zehnder modulators (MZMs) are approaching the limits of possible performance for high-speed applications. However, due to a large number of design parameters and the complex simulation of these devices, achieving high-performance configuration employing conventional optimization methods result in prohibitively long times and use of resources. Here, we propose a design methodology based on artificial neural networks and heuristic optimization that significantly reduces the complexity of the optimization process. First, we implemented a deep neural network model to substitute the 3D electromagnetic simulation of a Si-based MZM, whereas subsequently, this model is used to estimate the figure of merit within the heuristic optimizer, which, in our case, is the differential evolution algorithm. By applying this method to CMOS-compatible MZMs, we find new optimized configurations in terms of electro-optical bandwidth, insertion loss, and half-wave voltage. In particular, we achieve configurations of MZMs with a [Formula: see text] bandwidth and a driving voltage of [Formula: see text], or, alternatively, [Formula: see text] with a driving voltage of [Formula: see text]. Furthermore, the faster simulation allowed optimizing MZM subject to different constraints, which permits us to explore the possible performance boundary of this type of MZMs.

A Novel Silicon Forward-Biased PIN Mach-Zehnder Modulator with Two Operating States

In this paper, we demonstrate a silicon forward-biased positive intrinsic negative (PIN) Mach-Zehnder modulator (MZM), which has two operating states of high efficiency and high speed. The two operating states are switched by changing the position where the electric signal is loaded. The modulator incorporates a PIN phase shifter integrated with the passive resistance and capacitance (RC) equalizer (PIN-RC), which expands the electro-optic (E-O) bandwidth by equalizing it with modulation efficiency. The fabricated modulator exhibits a low insertion loss of 1.29 dB in two operating states and a compact design with a phase shifter length of 500 μm. The modulation efficiencies are 0.0088 V·cm and 1.43 V·cm, and the corresponding 3 dB E-O bandwidths are 200 MHz and 7 GHz, respectively. The high-speed modulation performance of the modulator is confirmed by non-return-to-zero (NRZ) modulation with a data rate of 15 Gbps without any pre-emphasis or post-processing. The presented modulator shows functional flexibility, low insertion loss, and a compact footprint, and it can be suitable for applications like optical switch arrays and analog signal processing.

X-Intersected Silicon Modulator of Well-Rounded Performance

In silicon modulator design, implantation is always a key factor, significantly influencing the doping profile and carrier distribution. As waveguide doping is limited by the compact footprint of the modulator rib, three-dimensional complex optimization is a viable option to improve performance. This work proposes an X-intersected modulator based on two inversely slanted junctions using the effective 3D Monte Carlo method for junction generation. The optimized results show that the modulation efficiency of the design is 1.09 V·cm, while the loss is 18 dB/cm, and the 3 dB bandwidth reaches over 35 GHz owing to the decreased resistance and capacitance of the 3D junction. This work demonstrates the benefits of 3D doping design in silicon modulators, contributing to higher efficiency and avoiding additional PN overlap to introduce lower capacitance. The design of 3D doping profiles well balances the DC and AC performance, and provides novel modulator solutions for high-speed datacom.

Co-packaged optics (CPO): status, challenges, and solutions

Due to the rise of 5G, IoT, AI, and high-performance computing applications, datacenter traffic has grown at a compound annual growth rate of nearly 30%. Furthermore, nearly three-fourths of the datacenter traffic resides within datacenters. The conventional pluggable optics increases at a much slower rate than that of datacenter traffic. The gap between application requirements and the capability of conventional pluggable optics keeps increasing, a trend that is unsustainable. Co-packaged optics (CPO) is a disruptive approach to increasing the interconnecting bandwidth density and energy efficiency by dramatically shortening the electrical link length through advanced packaging and co-optimization of electronics and photonics. CPO is widely regarded as a promising solution for future datacenter interconnections, and silicon platform is the most promising platform for large-scale integration. Leading international companies (e.g., Intel, Broadcom and IBM) have heavily investigated in CPO technology, an inter-disciplinary research field that involves photonic devices, integrated circuits design, packaging, photonic device modeling, electronic-photonic co-simulation, applications, and standardization. This review aims to provide the readers a comprehensive overview of the state-of-the-art progress of CPO in silicon platform, identify the key challenges, and point out the potential solutions, hoping to encourage collaboration between different research fields to accelerate the development of CPO technology.

High-performance Ge/Si electro-absorption optical modulator up to 85°C and its highly efficient photodetector operation

We studied a high-speed Ge/Si electro-absorption optical modulator (EAM) evanescently coupled with a Si waveguide of a lateral p-n junction for a high-bandwidth optical interconnect over a wide range of temperatures from 25 °C to 85 °C. We demonstrated 56 Gbps high-speed operation at temperatures up to 85 °C. From the photoluminescence spectra, we confirmed that the bandgap energy dependence on temperature is relatively small, which is consistent with the shift in the operation wavelengths with increasing temperature for a Ge/Si EAM. We also demonstrated that the same device operates as a high-speed and high-efficiency Ge photodetector with the Franz-Keldysh (F-K) and avalanche-multiplication effects. These results demonstrate that the Ge/Si stacked structure is promising for both high-performance optical modulators and photodetectors integrated on Si platforms.

53 GBd PAM-4 fully-integrated silicon photonics transmitter with a hybrid flip-chip bonded laser

We present a fully-integrated single-lane 53 GBd PAM-4 silicon photonics (SiPh) transmitter (Tx) with a flip-chip bonded laser diode (LD). The LD is butt-coupled to a Si edge coupler including a SiO₂ suspended spot-size converter. The coupled power exceeds 10 dBm with a 1 dB allowable misalignment of 2.3 µm. The RF and eye performances of the Tx are evaluated. Extinction ratio >5 dB is obtained at 3.5 V_ppd voltage swing. Aided by silicon capacitors, the Tx decouples parasitic inductances leading to remarkable improvements in the eye openings and transmitter dispersion eye closure quaternary by 1.16 dB. By implementing the fully-integrated Tx with driver packaging, we successfully demonstrate 106 Gb/s real-time operation satisfying KP4-FEC threshold at -5 dBm receiver sensitivity.

Design, analysis, and characterization of a compact silicon photonic modulator with meandered phase shifters

We present a C-band Mach-Zehnder modulator with meandered phase shifters and a compact footprint of 432 × 260 μm² on the silicon-on-insulator platform. Electrode, p-n junction, and optical transit time are considered when performing the electro-optic bandwidth (EO BW) simulations. The simulation results prove that the dominant bandwidth limiting factor for this type of modulator is optical transit time. The insertion loss of the modulator without bias is 2.1 dB. The measured half-wave voltage (V _π ) and 3-dB EO BW at -0.5 V bias are 6.4 V and 7.7 GHz, respectively. 53 Gbaud PAM-4 transmission over 2 km of standard single-mode fiber is achieved at a bit error rate (BER) below the 6.7% overhead hard-decision forward error correction BER threshold of 3.8×10 ^-3.

Silicon mode-insensitive modulator for TE0 mode and TE1 mode

Mode-division multiplexing (MDM), which could further increase the capacity and flexibility of the communication systems, has attracted much attention. In this Letter, we demonstrate a proof-of-principle silicon mode-insensitive modulator based on the balanced Mach-Zehnder interferometer that could realize modulation of both TE₀ and TE₁ modes using a horizontal PN junction. The PN junction is offset from the center of the waveguide to the n-type doped region to modulate both TE₀ and TE₁ modes effectively. An adiabatic directional coupler is used as a mode-insensitive 3-dB power splitter for both modes. A mode-insensitive thermal phase shifter is used to change the operation point of the modulator. On-off keying modulation at 32 Gb/s is successfully demonstrated for both TE₀ and TE₁ modes. This modulator can be potentially used in MDM-assisted optical sampling systems.

High linearity silicon DC Kerr modulator enhanced by slow light for 112 Gbit/s PAM4 over 2 km single mode fiber transmission

We demonstrate a high efficiency, high linearity and high-speed silicon Mach-Zehnder modulator based on the DC Kerr effect enhanced by slow light. The two modulation arms based on 500-µm-long grating waveguides are embedded with PN and PIN junctions, respectively. A comprehensive comparison between the two modulation arms reveals that insertion loss, bandwidth and modulation linearity are improved significantly after employing the DC Kerr effect. The complementary advantages of the slow light and the DC Kerr effect enable a modulation efficiency of 0.85 V·cm, a linearity of 115 dB·Hz^2/3, and a bandwidth of 30 GHz when the group index of slow light is set to 10. Furthermore, 112 Gbit/s PAM4 transmission over 2 km standard single mode fiber (SSMF) with bit error ratio (BER) below the soft decision forward error correction (SD-FEC) threshold is also demonstrated.

Circuit-level convergence of electronics and photonics: basic concepts and recent advances

Integrated photonics is widely regarded as an important post-Moore's law research direction. However, it suffers from intrinsic limitations, such as lack of control and satisfactory photonic memory, that cannot be solved in the optical domain and must be combined with electronics for practical use. Inevitably, electronics and photonics will converge. The photonic fabrication and integration technology is gradually maturing and electronics-photonics convergence (EPC) is experiencing a transition from device integration to circuit design. We derive a conceptual framework consisting of regulator, oscillator, and memory for scalable integrated circuits based on the fundamental concepts of purposeful behavior in cybernetics, entropy in information theory, and symmetry breaking in physics. Leveraging this framework and emulating the successes experienced by electronic integrated circuits, we identify the key building blocks for the integrated circuits for EPC and review the recent advances.

Advances in integrated ultra-wideband electro-optic modulators [Invited]

Increasing data traffic and bandwidth-hungry applications require electro-optic modulators with ultra-wide modulation bandwidth for cost-efficient optical networks. Thus far, integrated solutions have emerged to provide high bandwidth and low energy consumption in compact sizes. Here, we review the design guidelines and delicate structures for higher bandwidth, applying them to lumped-element and traveling-wave electrodes. Additionally, we focus on candidate material platforms with the potential for ultra-wideband optical systems. By comparing the superiority and mechanism limitations of different integrated modulators, we design a future roadmap based on the recent advances.

Recent Progress in Silicon-Based Slow-Light Electro-Optic Modulators

As an important optoelectronic integration platform, silicon photonics has achieved significant progress in recent years, demonstrating the advantages on low power consumption, low cost, and complementary metal–oxide–semiconductor (CMOS) compatibility. Among the different silicon photonics devices, the silicon electro-optic modulator is a key active component to implement the conversion of electric signal to optical signal. However, conventional silicon Mach–Zehnder modulators and silicon micro-ring modulators both have their own limitations, which will limit their use in future systems. For example, the conventional silicon Mach–Zehnder modulators are hindered by large footprint, while the silicon micro-ring modulators have narrow optical bandwidth and high temperature sensitivity. Therefore, developing a new structure for silicon modulators to improve the performance is a crucial research direction in silicon photonics. Meanwhile, slow-light effect is an important physical phenomenon that can reduce the group velocity of light. Applying slow-light effect on silicon modulators through photonics crystal and waveguide grating structures is an attractive research point, especially in the aspect of reducing the device footprint. In this paper, we review the recent progress of silicon-based slow-light electro-optic modulators towards future communication requirements. Beginning from the principle of slow-light effect, we summarize the research of silicon photonic crystal modulators and silicon waveguide grating modulators in detail. Simultaneously, the experimental results of representative silicon slow-light modulators are compared and analyzed. Finally, we discuss the existing challenges and development directions of silicon-based slow-light electro-optic modulators for the practical applications.

High-efficiency and high-speed narrow-width MOS capacitor-type Si optical modulator with TM mode excitation

We developed a high-speed and high-efficiency narrow-width metal-oxide-semiconductor (MOS) capacitor-type Si optical modulator (Si-MOD) by applying TM optical mode excitation. We designed and fabricated an optical-mode-converter structure from TE to TM mode. Even in the case of a 200-nm width, the Si MOS-MOD showed high-modulation efficiency in TM mode (about 0.18 Vcm), and the electrical capacitance decreased as the MOS junction width decreased. We also demonstrated high-speed operation at 32 Gbps and 40 Gbps for the 30-µm-long Si MOS-MOD in TM mode.

Variation of Signal Reflection on Electrodes of Silicon Mach-Zehnder Modulators: Influence of Nanoscale Variation and Mitigation Strategies

Driving signal reflection on traveling wave electrodes (TWEs) is a critical issue in Mach–Zehnder modulators. Fabrication variation often causes a random variation in the electrode impedance and the signal reflection, which induces modulation characteristics variation. The variation of reflection could be intertwined with the variation of other electrode characteristics, such as microwave signal attenuation, resulting in complexity. Here, we characterize the (partial) correlation coefficients between the reflection and modulation characteristics at different bit rates. Decreasing correlation at higher bit rates is observed. Device physics analysis shows how the observed variation can be related to nanoscale variation of material properties, particularly in the embedded diode responsible for electro-optic modulation. We develop a detailed theory to analyze two variation modes of the diode (P-i-N diode or overlapping P/N regions), which reveal insight beyond simplistic diode models. Microwave signal attenuation tends to reduce the correlation with on-electrode reflection, particularly at high bit rates. The theory shows the relative importance of conductor-induced attenuation and “dielectric”-induced attenuation, with different dependence on the frequency and fabrication variation. Strategies on how to mitigate the effect of variation for better fabrication tolerance are discussed by considering three key factors: pre-shift in structural design, bias condition, and fabrication control accuracy.

High-speed Ge/Si electro-absorption optical modulator in C-band operation wavelengths

We studied a high-speed electro-absorption optical modulator (EAM) of a Ge layer evanescently coupled with a Si waveguide (Si WG) of a lateral pn junction for high-bandwidth optical interconnect. By decreasing the widths of selectively grown Ge layers below 1 µm, we demonstrated a high-speed modulation of 56 Gbps non-return-to-zero (NRZ) and 56 Gbaud pulse amplitude modulation 4 (PAM4) EAM operation in the C-band wavelengths, in contrast to the L-band wavelengths operations in previous studies on EAMs of pure Ge on Si. From the photoluminescence and Raman analyses, we confirmed an increase in the direct bandgap energy for such a submicron Ge/Si stack structure. The operation wavelength for the Ge/Si stack structure of a Ge/Si EAM was optimized by decreasing the device width below 1-µm and setting the post-growth anneal condition, which would contribute to relaxing the tensile-strain of a Ge layer on a Si WG and broadening the optical bandwidths for Franz-Keldysh (FK) effect with SiGe alloy formation.

Verified equivalent-circuit model for slot-waveguide modulators

We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travelling-wave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and π-voltage of SOH slot-waveguide modulators.

Triply resonant coupled-cavity electro-optic modulators for RF to optical signal conversion

We propose an on-chip triply resonant electro-optic modulator architecture for RF-to-optical signal conversion and provide a detailed theoretical analysis of the optimal "circuit-level" device geometries and their performance limits. The designs maximize the RF-optical conversion efficiency through simultaneous resonant enhancement of the RF drive signal, a continuous-wave (CW) optical pump, and the generated optical sideband. The optical pump and sideband are resonantly enhanced in respective supermodes of a two-coupled-cavity optical resonator system, while the RF signal can be enhanced in addition by an LC circuit formed by capacitances of the optical resonator active regions and (integrated) matching inductors. We show that such designs can offer 15-50 dB improvement in conversion efficiency over conventional microring modulators. In the proposed configurations, the photon lifetime (resonance linewidth) limits the instantaneous RF bandwidth of the electro-optic response but does not limit its central RF frequency. The latter is set by the coupling strength between the two coupled cavities and is not subject to the photon lifetime constraint inherent to conventional singly resonant microring modulators. This feature enables efficient operation at high RF carrier frequencies without a reduction in efficiency commonly associated with the photon lifetime limit and accounts for 10-30 dB of the total improvement. Two optical configurations of the modulator are proposed: a "basic" configuration with equal Q-factors in both supermodes, most suitable for narrowband RF signals, and a "generalized" configuration with independently tailored supermode Q-factors that supports a wider instantaneous bandwidth. A second significant 5-20 dB gain in modulation efficiency is expected from RF drive signal enhancement by integrated LC resonant matching, leading to the total expected improvement of 15-50 dB. Previously studied triply-resonant modulators, with coupled longitudinal [across the free spectral range (FSR)] modes, have large resonant mode volume for typical RF frequencies, which limits the interaction between the optical and RF fields. In contrast, the proposed modulators support maximally tightly confined resonant modes, with strong coupling between the mode fields, which increases and maintains high device efficiency across a range of RF frequencies. The proposed modulator architecture is compact, efficient, capable of modulation at high RF carrier frequencies and can be applied to any cavity design or modulation mechanism. It is also well suited to moderate Q, including silicon, implementations, and may be enabling for future CMOS RF-electronic-photonic systems on chip.

Partial Pre-Emphasis for Pluggable 400 G Short-Reach Coherent Systems

Pre-emphasis filters are used to pre-compensate for the transmitter frequency response of coherent systems to mitigate receiver noise enhancement. This is particularly essential for low-cost, low-power coherent transceivers due to having an extremely bandlimited transmitter. However, the pre-emphasis filter also increases the signal peak-to-average power ratio (PAPR), thus posing a higher effective number of bits (ENoB) requirement for the arbitrary waveform generator (AWG). In this paper, we first numerically study the PAPR impact of partial pre-emphasis filters. We show that with partial pre-emphasis, an ENoB reduction from 5 to 4.5 bits is attainable at the same signal-to-noise ratio (SNR) out of the AWG. Next, we experimentally investigate the overall performance penalty of partial pre-emphasis in a 50 Gbaud 16QAM coherent system. A manageable Q factor penalty of around 0.5 dB is found for both single-polarization and dual-polarization systems with a 0.8 dB PAPR reduction.

Integrated source-free all optical sampling with a sampling rate of up to three times the RF bandwidth of silicon photonic MZM

Source-free all optical sampling, based on the convolution of the signal spectrum with a frequency comb in an electronic-photonic, co-integrated silicon device will be presented for the first time, to the best of our knowledge. The method has the potential to achieve very high precision, requires only low power and can be fully tunable in the electrical domain. Sampling rates of three and four times the RF bandwidths of the photonics and electronics can be achieved. Thus, the presented method might lead to low-footprint, fully-integrated, precise, electrically tunable, photonic ADCs with very high-analog bandwidths for the digital infrastructure of tomorrow.

Pure phase modulation based on a silicon plasma dispersion modulator

Plasma dispersion modulators (PDMs), such as carrier injection modulators and carrier depletion modulators, are widely used for high speed phase modulation in silicon photonic circuits, but they suffer from spurious intensity modulation. This can be a problem in coherent communication systems that make use of complex multi-level quadrature modulation formats, as well as analog applications such as microwave photonics. In this article, a method to achieve pure phase modulation using PDMs is proposed based on a configurable modulator circuit. The configurable modulator is implemented as a Mach-Zehnder interferometer with a PDM and tunable couplers (TCs). The spurious intensity modulation of the phase modulated lightwave can be compensated by tuning the coupling ratios of the TCs and the phase delay between the two arms of the MZI. Simulation results show that for a depletion modulator, the 1.26 dB spurious intensity modulation can be suppressed down to 0.023 dB within a phase range of 0.4π, and for injection modulator, the 1.27 dB spurious intensity modulation can be suppressed down to 0.07 dB within a phase range of 0.76π.

180 Gb/s single carrier single polarization 16-QAM transmission using an O-band silicon photonic IQM

In this paper, we present inphase-quadrature (IQ) modulation in the O-band using dual parallel Mach-Zehnder modulators on the silicon photonics platform. The detailed design of the IQ modulator (IQM) is discussed. We then report the DC and small signal characterization of the device and investigate the performance of the device in a coherent transmission system. A bit rate of 180 Gb/s with 16-QAM modulation is achieved over 20 km of single-mode fiber without any chromatic dispersion compensation. Furthermore, we demonstrate that 77 Gbaud QPSK transmission can be achieved with a low drive voltage of 3 Vpp.

64 Gbps Si photonic crystal slow light modulator by electro-optic phase matching

We demonstrate 64 Gbps operation in a compact Si photonic crystal optical modulator that employs meander line electrodes and compensate for the phase mismatch between slow light and RF signals. Although low dispersion slow light increases the modulation efficiency, maintaining a sufficiently wide working spectrum, the phase mismatch becomes a limiting factor on the operation speed even when the phase shifter length is as short as 200 μm. Meander line electrodes broke this limit and enhanced the cutoff frequency by up to 31 and 38 GHz using 50 Ω and 20 Ω termination resistors, respectively. This allowed to use a group index of slow light higher than 20, and greatly improved the quality of the modulation characteristics at 25 and 32 Gbps. Clear open eye was observed even at 40-64 Gbps.

400 Gb/s O-band silicon photonic transmitter for intra-datacenter optical interconnects

We present and experimentally demonstrate a silicon photonic (SiP)-based four-lane 400 Gb/s transmitter for fiber-rich intra-datacenter optical interconnects. Four parallel SiP series push-pull traveling wave Mach-Zehnder modulators (MZMs) operating in the O-band are used in the transmitter. The MZMs have an average electro-optic (EO) bandwidth of approximately 30 GHz at 3 V reverse bias voltage. To assess the parallel operation, we measure the EO crosstalk between the four MZMs, where the EO crosstalk between the closest MZMs is below -17 dB over 50 GHz bandwidth. Then, we use a four-channel digital-to-analog converter (DAC) to simultaneously drive the MZMs and characterize the performance of the transmitter versus various parameters. Results reveal that 53 Gbaud pulse amplitude modulation over 4-levels (PAM4), i.e., 100 Gb/s net rate, per lane can be received at a bit error rate (BER) below the KP4- forward error correction (KP4-FEC) threshold of 2.4×10^-4 using only a 5-tap feed-forward equalizer (FFE) at the receiver. In addition, we show that 53 Gbaud and 64 Gbaud PAM4 per lane can be received at a BER below the KP4-FEC and 7% hard decision FEC (HD-FEC), respectively, using a driving voltage swing below 1.8 Vpp. To the best of our knowledge, these are the best results for 100 Gb/s PAM4 using a single electrode SiP TWMZM with a lateral PN junction in a multi-project wafer process. Finally, we show that the BER is still below the KP4-FEC at maximum crosstalk for all lanes, and an aggregate rate of 400 Gb/s can be achieved at an average BER of approximately 1×10^-4.

Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon

The electro-optical Pockels effect is an essential nonlinear effect used in many applications. The ultrafast modulation of the refractive index is, for example, crucial to optical modulators in photonic circuits. Silicon has emerged as a platform for integrating such compact circuits, but a strong Pockels effect is not available on silicon platforms. Here, we demonstrate a large electro-optical response in silicon photonic devices using barium titanate. We verify the Pockels effect to be the physical origin of the response, with r₄₂ = 923 pm V^-1, by confirming key signatures of the Pockels effect in ferroelectrics: the electro-optic response exhibits a crystalline anisotropy, remains strong at high frequencies, and shows hysteresis on changing the electric field. We prove that the Pockels effect remains strong even in nanoscale devices, and show as a practical example data modulation up to 50 Gbit s^-1. We foresee that our work will enable novel device concepts with an application area largely extending beyond communication technologies.

Demonstration of a 120° hybrid based simplified coherent receiver on SOI for high speed PON applications

We demonstrate the first simplified coherent receiver using a 120° hybrid on silicon-on-insulator (SOI) for high speed PON applications. This coherent receiver integrates an inverse taper edge coupler for the received signal, a vertical grating coupler for the local oscillator input, a polarization splitter and rotator (PSR), a 120° hybrid based on a 3×3 multimode interference (MMI) coupler, and three germanium photodetectors. We achieved 25 Gbit/s two-level pulse amplitude modulation (PAM-2) transmission over 30 km standard single mode fiber (SMF) in the C-band without any digital signal processing (DSP) (e.g., pre-emphasis, pulse shaping, equalization, nonlinearity compensation) and dispersion compensation (e.g., optical or digital) either at the transmitter or at the receiver. The requirements for frequency and phase locking of the local oscillator (LO) were avoided due to the use of intensity modulated signals. Receiver sensitivities of -23.70 dBm, -20.30 dBm, and -15.10 dBm are achieved at a bit error rate (BER) below the hard-decision forward error correction (HD-FEC) threshold (i.e., 3.8 × 10^-3) in back-to-back (B2B), after 21 km and 30 km, respectively. We also demonstrate 25 Gbit/s PAM-4 transmission achieving receiver sensitivities of -15.30 dBm, -13.90 dBm, and -9.50 dBm below the HD-FEC threshold in B2B, after 10.5 km and 21 km, respectively.

Tunable Orbital Angular Momentum Radiation from Angular-Momentum-Biased Microcavities

Lasers and light emitters do not typically radiate fields with orbital angular momentum (OAM). Here we show that a suitable scheme of spatiotemporal modulation of a microring cavity laser can impart a synthetic angular momentum, resulting in beams with well-defined OAM. The phenomenon relies on a traveling wave modulation of the refractive index of the microring, which breaks the degeneracy of oppositely oriented whispering gallery modes. In parallel, a static structural grating on the periphery of the microring enables efficient vertical radiation. The proposed structure is inherently tunable and can also emit fields with zero net OAM while retaining toroidal energy distributions similar to the effect of an axicon lens.

Electro-optic phase matching in a Si photonic crystal slow light modulator using meander-line electrodes

We demonstrate a Si photonic crystal waveguide Mach-Zehnder modulator that incorporates meander-line electrodes to compensate for the phase mismatch between slow light and RF signals. We first employed commonized ground electrodes in the modulator to suppress undesired fluctuations in the electro-optic (EO) response due to coupled slot-line modes of RF signals. Then, we theoretically and experimentally investigated the effect of the phase mismatch on the EO response. We confirmed that meander-line electrodes improve the EO response, particularly in the absence of internal reflection of the RF signals. The cut-off frequency of this device can reach 27 GHz, which allows high-speed modulation up to 50 Gbps.

Frequency response of dual-drive silicon photonic modulators with coupling between electrodes

We characterize the electro-optic frequency response of a four-port traveling-wave dual-drive modulator with relatively strong coupling amongst the electrodes. We show that the electro-optic frequency response of the MZM can still be predicted with the 2×2 cascaded matrix model if the MZM is symmetric and differentially driven.

200 Gb/s transmission using a dual-polarization O-Band silicon photonic intensity modulator for Stokes vector direct detection applications

We present a dual-polarization O-band silicon photonic (SiP) transmitter for intra-datacenter optical interconnects. The transmitter is built using two identical O-band traveling wave Mach-Zehnder modulators with an average VπL and a bandwidth at 1.5 V bias voltage of 2.88 V.cm and 24.5 GHz, respectively. We experimentally demonstrate the transmitter in a Stokes vector direct-detection (SV-DD) system for dual-polarization intensity modulated signals with 2-level and 4-level pulse amplitude modulation (DP-PAM2 and DP-PAM4) formats. The direct-detection Stokes vector receiver (DD-SVR) followed by offline digital signal processing (DSP) is implemented for SOP de-rotation. We characterize the performance of the SV-DD system versus number of taps, received signal power, state of polarization (SOP), reach, and bit rate. Results reveal that 112 Gb/s DP-PAM2 can be transmitted over 10 km of single mode fiber (SMF) at a bit error rate (BER) below 10^-5 at -1 dBm received signal power irrespective of the SOP. Moreover, a 168 Gb/s (42 Gbaud) DP-PAM4 signal can be transmitted over 2 km and 10 km at a BER below the 7% hard-decision forward error correction (HD-FEC) threshold (i.e., 3.8 × 10^-3) at 0 dBm and 2 dBm, respectively. Furthermore, 224 Gb/s and 200 Gb/s DP-PAM4 are successfully received at a BER below the HD-FEC in the back-to-back and 2 km cases, respectively. Finally, we compare the performance of the 6 × 2 multiple-input multiple-output (MIMO) equalization to a simpler 4 × 2 MIMO equalization and explain the superior performance of the 6 × 2 in the presence of SVR imperfections.

Experimental parametric study of 128 Gb/s PAM-4 transmission system using a multi-electrode silicon photonic Mach Zehnder modulator

We present an experimental study and analysis of a travelling wave series push-pull silicon photonic multi-electrode Mach-Zehnder modulator (ME-MZM) and compare its performance with a single-electrode travelling wave Mach-Zehnder modulator (TWMZM). Utilizing the functionality of the ME-MZM structure plus digital-signal-processing, we report: 1) the C-band transmission of 84 Gb/s OOK modulated data below the KP4 forward error correction threshold with 2 V_pp drive voltage over a distance of 2 km; 2) the transmission of a 128 Gb/s optical 4-level pulse amplitude modulated signal over 1 km of fiber; and 3) the generation of a 168 Gb/s PAM-4 signal using two electrical OOK signals. By comparing the transmission system performance measurements for the ME-MZM with measurements performed using a similar series push-pull TWMZM, we show that the ME-MZM provides a clear advantage in achieving higher baud PAM-4 generation and transmission compared to a TWMZM.

High-speed low-chirp PAM-4 transmission based on push-pull silicon photonic microring modulators

We report a silicon photonic modulator based on the use of dual parallel microring modulators (MRMs) inserted in a Mach-Zehnder interferometer (MZI). It is operated in a push-pull configuration for low-chirp transmission at approximately 1550 nm. The chirp parameters of the device are measured using 10 Gb/s on-off keying (OOK) transmission over 20 km of standard single mode fiber (SSMF), and they are less than 0.01, showing the low-chirp characteristic of the modulator. We further demonstrate four-level pulse amplitude modulation (PAM-4) transmission at 92 Gb/s over 1 km of SSMF and at 40 Gb/s over 20 km of SSMF. The measured bit error rates (BERs) are below the hard-decision (HD) forward error correction (FEC) threshold of 3.8 × 10^-3.

U-shaped PN junctions for efficient silicon Mach-Zehnder and microring modulators in the O-band

We demonstrate U-shaped silicon PN junctions for energy efficient Mach-Zehnder modulators and ring modulators in the O-band. This type of junction has an improved modulation efficiency compared to existing PN junction geometries, has low losses, and supports high-speed operation. The U-shaped junctions were fabricated in an 8" silicon photonics platform, and they were incorporated in travelling-wave Mach-Zehnder modulators and microring modulators. For the high-bandwidth Mach-Zehnder modulator, the DC V_πL at -0.5 V bias was 4.6 V·mm. It exhibited a 3dB bandwidth of 13 GHz, and eye patterns at up to 24 Gb/s were observed. A V_πL as low as ~2.6 V·mm at a -0.5 V bias was measured in another device. The ring modulator tuning efficiency was 40 pm·V^-1 between 0 V and -0.5 V bias. It had a 3-dB bandwidth of 13.5 GHz and open eye patterns at up to 13 Gb/s were measured. This type of PN junctions can be easily fabricated without extra masks and can be incorporated into generic silicon photonics platforms.

Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

Coplanar-waveguide-based silicon Mach-Zehnder modulator using a meandering optical waveguide and alternating-side PN junction loading

We demonstrate a silicon Mach-Zehnder modulator with a coplanar waveguide transmission-line electrode structure using a meandering optical waveguide and alternating-side PN junction loading of the electrodes, which helps suppress the signal distortion caused by the parasitic slot-line mode and improves the electro-optic (EO) bandwidth. The silicon MZM exhibits a π-phase-shift voltage (V_π) of 4.5 V with an EO 3 dB bandwidth of ∼20  GHz for a 5 mm long phase shifter. This achieved V_π is among the lowest for silicon-only modulators with a bandwidth of more than 20 GHz.

Segmented silicon MZM for PAM-8 transmissions at 114 Gb/s with binary signaling

We experimentally demonstrate PAM-8 generation from binary electrical signals driving a silicon multi-electrode Mach-Zehnder modulator acting as an optical digital-to-analog converter. Measured BER in back-to-back configuration is used to evaluate signal quality. We demonstrate 38 GBd PAM-8 transmission below the forward error correction (FEC) threshold using minimum mean square error (MMSE) equalization. The results show that modulators with segmented phase shifters can be advantageously used to eliminate the need for high bandwidth electronic digital-to-analog converters in the generation of multilevel signals. These modulators, that can be designed and fabricated with standard CMOS compatible tools and processes, are of high interest for short range high-speed data links.

Dual phase-shift Bragg grating silicon photonic modulator operating up to 60 Gb/s

We demonstrate PAM-4 and OOK operation of a novel silicon photonic modulator. The modulator design is based on two phase-shifts in a Bragg Grating structure driven in a push pull configuration. Back-to-back PAM-4 modulation is demonstrated below the FEC threshold at up to 60 Gb/s. OOK modulation is also shown up to 55 Gb/s with MMSE equalization and up to 50 Gb/s without equalization. Eye diagrams and BER curves at different bit rates are provided for both PAM-4 and OOK modulations. To our knowledge, this structure is the fastest silicon photonic modulator based on Bragg gratings, reaching modulation speed comparable to the fastest Mach-Zehnder modulators and micro-ring modulators.

High-quality silicon on silicon nitride integrated optical platform with an octave-spanning adiabatic interlayer coupler

Hybrid nanophotonic platforms based on three-dimensional integration of different photonic materials are emerging as promising ecosystems for the optoelectronic device fabrication. In order to benefit from key features of both silicon (Si) and silicon nitride (SiN) on a single chip, we have developed a wafer-scale hybrid photonic platform based on the integration of a thin crystalline Si layer on top of a thin SiN layer with an ultra-thin oxide buffer layer. A complete optical path in the hybrid platform is demonstrated by coupling light back and forth between nanophotonic devices in Si and SiN layers. Using an adiabatic tapered coupling method, a record-low interlayer coupling-loss of 0.02 dB is achieved at 1550 nm telecommunication wavelength window. We also demonstrate high-Q resonators on the hybrid material platform with intrinsic Q's as high as 3 × 10(6) for a 60 μm-radius microring resonator, which is (to the best of our knowledge) the highest Q observed for a micro-resonator on a hybrid Si/SiN platform.