Non-degenerate two-photon absorption in silicon waveguides: analytical and experimental study

Near-infrared non-degenerate two-photon absorption coefficients of bulk GaAs and Si

We investigate the non-degenerate two-photon absorption coefficient β(ω₁, ω₂) as a function of the non-degeneracy parameter ω₁/ω₂ for bulk GaAs and Si at a constant transition energy ℏ ω ₁+ℏ ω ₂=1.57eV. In both materials, the two-photon absorption strength increases with increasing ω₁/ω₂ regardless of the direct and indirect character of the bandgap. The GaAs measurement data agrees well with corresponding theoretical predictions for direct semiconductors. The Si data reveals similar trends albeit with smaller overall absorption strength. In addition, different crystallographic orientations and polarization configurations are analyzed.

Infrared chemical imaging through non-degenerate two-photon absorption in silicon-based cameras

Chemical imaging based on mid-infrared (MIR) spectroscopic contrast is an important technique with a myriad of applications, including biomedical imaging and environmental monitoring. Current MIR cameras, however, lack performance and are much less affordable than mature Si-based devices, which operate in the visible and near-infrared regions. Here, we demonstrate fast MIR chemical imaging through non-degenerate two-photon absorption (NTA) in a standard Si-based charge-coupled device (CCD). We show that wide-field MIR images can be obtained at 100 ms exposure times using picosecond pulse energies of only a few femtojoules per pixel through NTA directly on the CCD chip. Because this on-chip approach does not rely on phase matching, it is alignment-free and does not necessitate complex postprocessing of the images. We emphasize the utility of this technique through chemically selective MIR imaging of polymers and biological samples, including MIR videos of moving targets, physical processes and live nematodes.

Reflection from a free carrier front via an intraband indirect photonic transition

The reflection of light from moving boundaries is of interest both fundamentally and for applications in frequency conversion, but typically requires high pump power. By using a dispersion-engineered silicon photonic crystal waveguide, we are able to achieve a propagating free carrier front with only a moderate on-chip peak power of 6 W in a 6 ps-long pump pulse. We employ an intraband indirect photonic transition of a co-propagating probe, whereby the probe practically escapes from the front in the forward direction. This forward reflection has up to 35% efficiency and it is accompanied by a strong frequency upshift, which significantly exceeds that expected from the refractive index change and which is a function of group velocity, waveguide dispersion and pump power. Pump, probe and shifted probe all are around 1.5 µm wavelength which opens new possibilities for “on-chip” frequency manipulation and all-optical switching in optical telecommunications.

Here the authors present an experimental demonstration of a free carrier front induced intraband indirect photonic transition and show how the waveguide dispersion can be exploited to decrease the required free carrier concentration for substantial reflection via an indirect intraband transition.

Multichannel phase-sensitive amplification in a low-loss CMOS-compatible spiral waveguide

We investigate single-channel and multichannel phase-sensitive amplification (PSA) in a highly nonlinear, CMOS-compatible spiral waveguide with ultralow linear and negligible nonlinear losses. We achieve a net gain of 10.4 dB and an extinction ratio of 24.6 dB for single-channel operation, as well as a 5 dB gain and a 15 dB extinction ratio spanning over a bandwidth of 24 nm for multiple-channel operation. In addition, we derive a simple analytic solution that enables calculating the maximum phase-sensitive gain in any Kerr medium featuring linear and nonlinear losses. These results not only give a clear guideline for designing PSA-based amplifiers but also show that it is possible to implement both optical regeneration and amplification in a single on-chip device.

Cross-phase modulation-induced spectral broadening in silicon waveguides

We analytically and experimentally investigate cross-phase modulation (XPM) in silicon waveguides. In contrast to the well known result in pure Kerr media, the spectral broadening ratio of XPM to self-phase modulation is not two in the presence of either two-photon absorption (TPA) or free carriers. The physical origin of this change is different for each effect. In the case of TPA, this nonlinear absorption attenuates and slightly modifies the pulse shape due to differential absorption in the pulse peak and wings. When free carriers are present two different mechanisms modify the dynamics. First, free-carrier absorption performs a similar role to TPA, but is additionally asymmetric due to the delayed free-carrier response. Second, free-carrier dispersion induces an asymmetric blue phase shift which competes directly with the symmetric Kerr-induced XPM red shift. We confirm this analysis with pump-probe experiments in a silicon photonic crystal waveguide.