Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector

Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs

Single layer graphene (SLG) was synthesized via high-quality chemical vapor deposition (CVD) on high-quality copper and subsequently transferred onto SiO2 and on n-GaAs substrates with varying doping electron concentrations (n = 1016, 1017, 5 × 1017, 1018, and 5 × 1018 cm-3). The n-GaAs substrates were grown by molecular beam epitaxy. The optical properties of the SLG were investigated through photoluminescence (PL) and Raman spectroscopy measurements. Carrier concentration n or p and Fermi energy (EF) values in SLG were determined both before and after the transfer onto n-GaAs, and these findings were validated through PL studies. The Raman spectroscopy results indicated an increase in the transfer of electrons from n-GaAs to SLG as the doping electron density in n-GaAs increased. PL analysis revealed a significant change in the bandgap energy (Eg) of n-GaAs due to bandgap narrowing and the Burstein-Moss shift. Our data enable us to determine the energy band diagrams. Upon aligning the energy bands, an increase in transferred carrier density is accompanied by changes in Fermi energies and an increase in the potential barrier (∆U). The increase in ∆U is of significant interest to ensure that charges are directed more efficiently toward the cell's electrical contacts in the case of photovoltaic application. There, they can contribute significantly to the generated electric current, thereby enhancing the performance of a cell. Our results can provide insights into the interaction in graphene-based heterostructures and aid in selecting the best parameters for developing new advanced devices.

Self-Driven Photo-Polarized Water Molecule-Triggered Graphene-Based Photodetector

Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices. Herein, we present the feasibility of a polarized liquid-triggered photodetector in which polarized water is sandwiched between graphene and a semiconductor. Due to the polarization and depolarization processes of water molecules driven by photogenerated carriers, a photo-sensitive current can be repeatedly produced, resulting in a high-performance photodetector. The response wavelength of the photodetector can be fine-tuned as a result of the free choice of semiconductors as there is no requirement of lattice match between graphene and the semiconductors. Under zero voltage bias, the responsivity and specific detectivity of Gr/NaCl (0.5 M)W/N-GaN reach values of 130.7 mA/W and 2.3 × 10⁹ Jones under 350 nm illumination, respectively. Meanwhile, using a polar liquid photodetector can successfully read the photoplethysmography signals to produce accurate oxygen blood saturation and heart rate. Compared with the commercial pulse oximetry sensor, the average errors of oxygen saturation and heart rate in the designed photoplethysmography sensor are ~1.9% and ~2.1%, respectively. This study reveals that water can be used as a high-performance photodetector in informative industries.

High Efficient Solar Cell Based on Heterostructure Constructed by Graphene and GaAs Quantum Wells

Despite the fascinating optoelectronic properties of graphene, the power conversion efficiency (PCE) of graphene based solar cells remains to be lifted up. Herein, it is experimentally shown that the graphene/quantum wells/GaAs heterostructure solar cell can reach a PCE of 20.2% and an open-circuit voltage (V_oc ) as high as 1.16 V at 90 K. The high efficiency is a result of carrier multiplication (CM) effect of graphene in the graphene/GaAs heterostructure. Especially, the external quantum efficiency (EQE) in the ultraviolet wavelength can be improved up to 72.2% based on the heterostructure constructed by graphene/In_0.15 Ga_0.85 As/GaAs_0.75 P_0.25 quantum wells/GaAs. The EQE increases as the light wavelength decreases, which indicates more carriers can be effectively excited by the higher energy photons through CM effect. Owing to these physical characters, the graphene/GaAs heterostructure solar cell will provide a possible way to exceed Shockley-Queisser (S-Q) limit.

Coexistence of Contact Electrification and Dynamic p-n Junction Modulation Effects in Triboelectrification

The triboelectric effect occurs when two dissimilar materials are in physical contact, attributed to the combination of contact electrification (CE) and electrostatic induction. It has been extensively explored for the development of high-performance triboelectric nanogenerators (TENGs). In this paper, we report on, besides the CE-related charge generation, an additional charge generation phenomenon associated with the modulation of the p-n junction when two semiconductor materials [methylammonium lead iodide (MAPI) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)] are put in contact and separated dynamically. The electrical outputs generated by the CE effect are determined by the surface potential difference between the two friction materials, while the ones induced by the p-n junction modulation are determined by the dynamic variations in the depletion widths of the two semiconductor friction materials. The outputs generated by the CE effect and the p-n junction effect are well separated in time scale; the p-n junction modulation contributes ∼20% of the total charge generated and could be varied by changing the chemical composition of the semiconductors. The results may provide an alternative method for the development of high-performance TENGs by utilizing this additional p-n junction modulation effect.

Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications

Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III–V compounds are systematically summarized, and the prospects are discussed.

Guided fractures in graphene mechanical diode-like structures

The concept of a diode is usually applied to electronic and thermal devices but very rarely for mechanical ones. A recently proposed fracture rectification effect in polymer-based structures with triangular void defects has motivated us to test these ideas at the nanoscale using graphene membranes. Using fully-atomistic reactive molecular dynamics simulations we showed that robust rectification-like effects exist. The fracture can be 'guided' to more easily propagate along one specific direction than its opposite. We also observed that there is an optimal value for the spacing between each void for the rectification effect.

First-Principles Study of Electronic and Optical Properties of Tri-Layered van der Waals Heterostructures Based on Blue Phosphorus and Zinc Oxide

The creation of van der Waals heterostructures with tunable properties from various combinations of modern 2D materials is one of the promising tasks of nanoelectronics, focused on improving the parameters of electronic nanodevices. In this paper, using ab initio methods, we theoretically predict the existence of new three-layer van der Waals zinc oxide/blue phosphorus/zinc oxide (ZnO/BlueP/ZnO) heterostructure with AAA, ABA, ABC layer packing types. It is found that AAA-, ABA-, and ABC-stacked ZnO/BlueP/ZnO heterostructures are semiconductors with a gap of about 0.7 eV. The dynamic conductivity and absorption spectra are calculated in the wavelength range of 200–2000 nm. It is revealed that the BlueP monolayer makes the greatest contribution to the formation of the profiles the dynamic conductivity and absorption coefficient spectrums of the ZnO/BlueP/ZnO heterostructure. This is indicated by the fact that, for the ZnO/BlueP/ZnO heterostructure, conductivity anisotropy is observed at different directions of wave polarization, as for blue phosphorus. It has been established that the absorption maximum of the heterostructure falls in the middle ultraviolet range, and, starting from a wavelength of 700 nm, there is a complete absence of absorption. The type of layer packing has practically no effect on the regularities in the formation of the spectra of dynamic conductivity and the absorption coefficient, which is important from the point of view of their application in optoelectronics.

Quantum-coupled borophene-based heterolayers for excitonic and molecular sensing applications

Borophene (B), with remarkably unique chemical binding in its crystallographic structural phases including anisotropic structures, theoretically has high Young's modulus and thermal conductivity. Moreover, it is metallic in nature, and has recently joined the family of two-dimensional (2D) materials and is poised to be employed in flexible hetero-layered devices and sensors in fast electronic gadgets and excitonic devices. Interfacial coupling helps individual atomic sheets synergistically work in tandem, and is very crucial in controllable functionality. Most of the microscopic and spectroscopic scans reveal surface information; however, information regarding interfacial coupling is difficult to obtain. Electronic signatures of dynamic inter-layer coupling in B/boron nitride (BN) and B/molybdenum disulfide (MoS₂) have been detected in the form of distinct peaks in differential current signals obtained from scanning tunneling spectroscopy (STS) and conducting atomic force microscopy (CAFM). These unique sets of observed peaks represent interfacial coupling quantum states. The peaks in the electronic density of states (DOS) obtained via density functional theory (DFT) band structure calculations matched well with the electronic signatures of coupling quantum states. In our calculations, we found that the DOS peak evolves when the component layers are brought to compromised distances. While B/BN exhibits green sensitivity indicating mid-gap formation, B/MoS₂ bestows red sensitivity indicating band-gap excitation of MoS₂. Molecular detection of methylene blue (MB) based on surface-enhanced Raman spectroscopy (SERS) was carried out with borophene-based hetero-layered stacks as molecular anchoring platforms.

Performance enhancement of solar cells based on high photoelectric conversion efficiency of h-BN and metal nanoparticles

In this article, we propose a new type of CdTe thin-film solar cell based on a CdTe/CdS heterojunction. We used the finite difference time domain method to simulate the propagation of electromagnetic waves in the time domain under certain boundary conditions and the change in the absorption rate of cells when optimising the structure. The simulation shows that the light absorption rate of the cell is significantly enhanced after adding h-BN and metal particles to the proposed structure. Under the irradiation of standard light AM1.5 with the wavelength range of 300 nm to 1000 nm, presenting a 90% absorption bandwidth over 700 nm, and the average absorption rate is as high as 92.9%. The short-circuit current and open-circuit voltage are 30.98 mA/cm² and 1.155 V, respectively, and the photoelectric conversion efficiency (PCE) increases to 30.76%, which is an increase of 27.58% compared to the original PCE. The result shows that, after metal nanoparticles are embedded in the absorption layer of the cell, the free electrons on the surface of the metal particles oscillate under the action of light. The electromagnetic field is confined to a small area on the surface of the particles and is enhanced, which is beneficial for the absorption of light by the cells. This study provides a basis for theoretical research and feasible solutions for the manufacture of thin-film solar cells with a high absorption rate and high efficiency.

Towards Integration of Two-Dimensional Hexagonal Boron Nitride (2D h-BN) in Energy Conversion and Storage Devices

The prominence of two-dimensional hexagonal boron nitride (2D h-BN) nanomaterials in the energy industry has recently grown rapidly due to their broad applications in newly developed energy systems. This was necessitated as a response to the demand for mechanically and chemically stable platforms with superior thermal conductivity for incorporation in next-generation energy devices. Conventionally, the electrical insulation and surface inertness of 2D h-BN limited their large integration in the energy industry. However, progress on surface modification, doping, tailoring the edge chemistry, and hybridization with other nanomaterials paved the way to go beyond those conventional characteristics. The current application range, from various energy conversion methods (e.g., thermoelectrics) to energy storage (e.g., batteries), demonstrates the versatility of 2D h-BN nanomaterials for the future energy industry. In this review, the most recent research breakthroughs on 2D h-BN nanomaterials used in energy-based applications are discussed, and future opportunities and challenges are assessed.

Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface

Hexagonal boron nitride (h-BN), together with other members of the van der Waals crystal family, has been studied for over a decade, both in terms of fundamental and applied research. Up to now, the spectrum of h-BN-based devices has broadened significantly, and systems containing the h-BN/III-V junctions have gained substantial interest as building blocks in, inter alia, light emitters, photodetectors, or transistor structures. Therefore, the understanding of electronic phenomena at the h-BN/III-V interfaces becomes a question of high importance regarding device engineering. In this study, we present the investigation of electronic phenomena at the h-BN/GaN interface by means of contactless electroreflectance (CER) spectroscopy. This nondestructive method enables precise determination of the Fermi level position at the h-BN/GaN interface and the investigation of carrier transport across the interface. CER results showed that h-BN induces an enlargement of the surface barrier height at the GaN surface. Such an effect translates to Fermi level pinning deeper inside the GaN band gap. As an explanation, we propose a mechanism based on electron transfer from GaN surface states to the native acceptor states in h-BN. We reinforced our findings by thorough structural characterization and demonstration of the h-BN/GaN Schottky diode. The surface barriers obtained from CER (0.60 ± 0.09 eV for GaN and 0.91 ± 0.12 eV for h-BN/GaN) and electrical measurements are consistent within the experimental accuracy, proving that CER is an excellent tool for interfacial studies of 2D/III-V hybrids.

2D III-Nitride Materials: Properties, Growth, and Applications

2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin-based devices, and gas detectors. Although the developments of 2D h-BN materials have been successful, the fabrication of other 2D III-nitride materials, such as 2D h-AlN, h-GaN, and h-InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III-nitride materials are summarized. The properties of the 2D III-nitride materials are mainly obtained by first-principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III-nitride materials is focused on 2D h-BN and h-AlN, as the developments of 2D h-GaN and h-InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h-BN materials; however, many potential applications are cited for the entire range of 2D III-nitride materials. Finally, future research directions and prospects in this field are also discussed.

Parity-Dependent Moiré Superlattices in Graphene/h-BN Heterostructures: A Route to Mechanomutable Metamaterials

The superlattice of alternating graphene/h-BN few-layered heterostructures is found to exhibit strong dependence on the parity of the number of layers within the stack. Odd-parity systems show a unique flamingolike pattern, whereas their even-parity counterparts exhibit regular hexagonal or rectangular superlattices. When the alternating stack consists of 7 layers or more, the flamingo pattern becomes favorable, regardless of parity. Notably, the out-of-plane corrugation of the system strongly depends on the shape of the superstructure resulting in significant parity dependence of its mechanical properties. The predicted phenomenon originates in an intricate competition between moiré patterns developing at the interface of consecutive layers. This mechanism is of general nature and is expected to occur in other alternating stacks of closely matched rigid layered materials as demonstrated for homogeneous alternating junctions of twisted graphene and h-BN. Our findings thus allow for the rational design of mechanomutable metamaterials based on van der Waals heterostructures.

MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device's photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.

Density functional study of gallium clusters on graphene: electronic doping and diffusion

Motivated by experimental results on transport properties of graphene covered by gallium atoms, the density functional theory study of clustering of gallium atoms on graphene (up to a size of 8 atoms) is presented. The paper explains a rapid initial increase of graphene electron doping by individual Ga atoms with Ga coverage, which is continually reduced to zero, when bigger multiple-atom clusters have been formed. According to density functional theory calculations with and without the van der Waals correction, gallium atoms start to form a three-dimensional cluster from five and three atoms, respectively. The results also explain an easy diffusion of Ga atoms while forming clusters caused by a small diffusion barrier of 0.11 eV. Moreover, the calculations show this barrier can be additionally reduced by the application of an external electric field, which was simulated by the ionization of graphene. This effect offers a unique possibility to control the cluster size in experiments only by applying a gate-voltage to the graphene in a field-effect transistor geometry and thereby without growth temperature assistance.

2D/3D graphene on h-BN interlayer-silicon solar cell with ZnO:Al buffer layer and enormous light captivation using Au/Ag NPs

In this paper, systematic design and analysis of thin-film graphene-silicon solar cells with the addition of an anti-reflection coating (ARC), hexagonal boron nitride (h-BN) interlayer and decorated with Au/Ag NPs infused in rear ZnO:Al buffer layer is reported. The 3D NPs are located on the top and rear side of the solar cell. Initially, we simulated a reference 2D graphene-silicon solar cell with highest simulated short circuit current density (Jsc) 30mA/ cm² and power conversion efficiency (PCE) of 10.65%. Using 2D and 3D full vectorial finite element method (FVFEM) simulations, we significantly improved the Jsc by 6.2mA/ cm² from 30mA/cm² to 36.21mA/cm² and PCE from 10.93% to 12.03%. We utilized a patterned graphene sheet with small nanoholes to increase surface and optical conductivity. Plasmonic NPs embedded in a graphene-silicon solar cell to increase plasmonic resonance effects is investigated. The 3D position of the patterned graphene, rear buffer layer stack, size, shape, and periodicity of NPs were well-controlled and analyzed under certain parametric variation conditions. Ag NPs located inside textured ZnO:Al detached to metal contact and small periodic Au NPs decorated beneath a h-BN interlayer lead to highly efficient light confinement and increase photon current generation. The proposed device exhibits 12.03% PCE, maximum light absorption over 80% and high overall quantum efficiency (QE). Furthermore, this structure offers major light trapping advantages, including significant EM light propagation throughout the solar cell structure.

Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure

Here, we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature. Based on the I-type band structure, the device can realize a two-dimensional electron-hole tube (2DEHT) structure for the substantial performance enhancement. The 2DEHT is observed to form at the interface on both sides of GaAs/AlGaAs barriers, which constructs effective pathways for both electron and hole transport in reducing the photocarrier recombination and enhancing the device photocurrent. In particular, the G/A/G NW photodetector exhibits a responsivity of 0.57 A/W and a detectivity of 1.83 × 10¹⁰ Jones, which are about 7 times higher than those of the pure GaAs NW device. The recombination probability has also been significantly suppressed from 81.8% to 13.2% with the utilization of the 2DEHT structure. All of these can evidently demonstrate the importance of the appropriate band structure design to promote photocarrier generation, separation, and collection for high-performance optoelectronic devices.

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Static heterojunction-based electronic devices have been widely applied because carrier dynamic processes between semiconductors can be designed through band gap engineering. Herein, we demonstrate a tunable direct-current generator based on the dynamic heterojunction, whose mechanism is based on breaking the symmetry of drift and diffusion currents and rebounding hot carrier transport in dynamic heterojunctions. Furthermore, the output voltage can be delicately adjusted and enhanced with the interface energy level engineering of inserting dielectric layers. Under the ultrahigh interface electric field, hot electrons will still transfer across the interface through the tunneling and hopping effect. In particular, the intrinsic anisotropy of black phosphorus arising from the lattice structure produces extraordinary electronic, transport, and mechanical properties exploited in our dynamic heterojunction generator. Herein, the voltage of 6.1 V, current density of 124.0 A/m², power density of 201.0 W/m², and energy-conversion efficiency of 31.4% have been achieved based on the dynamic black phosphorus/AlN/Si heterojunction, which can be used to directly and synchronously light up light-emitting diodes. This direct-current generator has the potential to convert ubiquitous mechanical energy into electric energy and is a promising candidate for novel portable and miniaturized power sources in the in situ energy acquisition field.

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

The static PN junction is the foundation of integrated circuits. Herein, we pioneer a high current density generation by mechanically moving N-type semiconductor over P-type semiconductor, named as the dynamic PN junction. The establishment and destruction of the depletion layer causes the redistribution and rebounding of diffusing carriers by the built-in field, similar to a capacitive charge/discharge process of PN junction capacitance during the movement. Through inserting dielectric layer at the interface of the dynamic PN junction, output voltage can be improved and designed numerically according to the energy level difference between the valence band of semiconductor and conduction band of dielectric layer. Especially, the dynamic MoS₂/AlN/Si generator with open-circuit voltage of 5.1 V, short-circuit current density of 112.0 A/m², power density of 130.0 W/m², and power-conversion efficiency of 32.5% has been achieved, which can light up light-emitting diode timely and directly. This generator can continuously work for 1 h, demonstrating its great potential applications.

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High current density direct-current generator based on dynamic PN junctions

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Dynamic equilibrium between establishment and destruction of the depletion layer

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Capacitive discharge of PN junction capacitance caused by hot carriers rebounding

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Enhance and design voltage numerically by inserting dielectric layer at the interface

Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate

Surface acoustic waves (SAWs) have been widely studied due to their unique advantage to couple the mechanical, electrical, and optical characteristics of semiconductor materials and have successfully been used in many industrial applications. In this work, we report a design that uses piezoelectric material Zinc Oxide (ZnO) to enhance the generation and propagation of SAWs on the surface of a highly doped p-type Gallium Arsenide (GaAs) substrate, which is more extensively used in optoelectronic devices than intrinsic GaAs structures. To maximize the piezoelectricity and successfully generate SAWs, high quality c-axis orientation of the ZnO film is needed; thus we experiment and develop optimized recipes of a radio frequency (RF) magnetron sputtering system to deposit ZnO on the GaAs substrate. To further optimize the SAW performance, an intermediate Silicon Oxide (SiO₂) layer is added between the ZnO film and GaAs substrate. Additionally, we test samples with varied thickness of ZnO films and dimensions of interdigital transducer (IDT) fingers to figure out their individual effect on SAW properties. The results and techniques demonstrated in this paper will provide guidance for further studies on enhancing SAWs propagating along many other doped semiconductor materials. This combination of acoustics and optoelectronics in doped semiconductors is a promising start to building enhanced and hybrid devices in various fields.

Low dark current and high-responsivity graphene mid-infrared photodetectors using amplification of injected photo-carriers by photo-gating

Low dark current, high-responsivity middle-wavelength infrared (IR) graphene photodetectors using photo-gating amplification of injected photo-carriers are demonstrated. A graphene/p-indium antimonide (InSb) heterojunction and graphene/insulator region were formed. The injected photo-carriers from InSb to graphene were amplified by photo-gating induced in the graphene/tetraethyl orthosilicate (TEOS) region, resulting in the high responsivity and low dark current performance. A responsivity of 14.9 A/W and an ON/OFF ratio of 2.66×10⁴ were achieved. The photoresponse is shown to be determined by the cross-sectional area between the graphene and the TEOS-SiO₂, in which the injected photo-carriers into graphene were modulated and amplified by the photo-gating effect. Our results indicate that high-performance IR photodetectors based on the developed graphene photodetectors can be realized.

Recent progress in synthesis, properties, and applications of hexagonal boron nitride-based heterostructures

Featuring an absence of dangling bonds, large band gap, low dielectric constant, and excellent chemical inertness, atomically thin hexagonal boron nitride (h-BN) is considered an ideal candidate for integration with graphene and other 2D materials. During the past years, great efforts have been devoted to the research of h-BN-based heterostructures, from fundamental study to practical applications. In this review we summarize the recent progress in the synthesis, novel properties, and potential applications of h-BN-based heterostructures, especially the synthesis technique. Firstly, various approaches to the preparation of both in-plane and vertically stacked h-BN-based heterostructures are introduced in detail, including top-down strategies associated with exfoliation transfer processes and bottom-up strategies such as chemical vapor deposition (CVD)-based growth. Secondly, we discuss some novel properties arising in these heterostructures. Several promising applications in electronic and optoelectronic devices are also reviewed. Finally, we discuss the main challenges and possible research directions in this field.

A High Current Density Direct-Current Generator Based on a Moving van der Waals Schottky Diode

Traditionally, Schottky diodes are used statically in the electronic information industry while dynamic or moving Schottky diode-based applications are rarely explored. Herein, a novel Schottky diode named "moving Schottky diode generator" is designed, which can convert mechanical energy into electrical energy by means of lateral movement between the graphene/metal film and semiconductor. The mechanism is based on the built-in electric field separation of the diffusing carriers in moving Schottky diode. A current-density output up of 40.0 A m^-2 is achieved through minimizing the contact distance between metal and semiconductor, which is 100-1000 times higher than former piezoelectric and triboelectric nanogenerators. The power density and power conversion efficiency of the heterostructure-based generator can reach 5.25 W m^-2 and 20.8%, which can be further enhanced by Schottky junction interface design. Moreover, the graphene film/semiconductor moving Schottky diode-based generator behaves better flexibility and stability, which does not show obvious degradation after 10 000 times of running, indicating its great potential in the usage of portable energy source. This moving Schottky diode direct-current generator can light up a blue light-emitting diode and a flexible graphene wristband is demonstrated for wearable energy source.

Determination of optimum optoelectronic properties in vertically stacked MoS2/h-BN/WSe2 van der Waals heterostructures

Inserting an insulator at the interface in vdW heterostructure solar cell unit can improve the photoelectric conversion efficiency, and the insulator has an optimal thickness.

KAgSe: A New Two-Dimensional Efficient Photovoltaic Material with Layer-Independent Behaviors

Recent advances in the development of two-dimensional (2D) materials have stimulated people's interest and enthusiasm to discover new kinds of 2D functional materials. In this paper, we propose a novel 2D layered semiconductor KAgSe using the first-principles calculation method, which displays excellent photovoltaic properties with proper direct band gap and significant carrier mobility. By evaluating the cohesive energy, vibrational phonon spectrum, and temporal evolution of the total energy at a high temperature of 500 K, the KAgSe monolayer is proved to be stable. Finite cleavage energy comparable to that of black phosphorus implies the feasibility of mechanical exfoliation of a KAgSe monolayer from the bulk. Layered KAgSe shows a ∼1.5 eV direct band gap, which is roughly independent of the number of layers. Remarkable optical absorption coefficients in the visible light region and significant carrier mobilities reveal a favorable application prospect of layered KAgSe in photovoltaic devices. Especially, the layer-independent optical absorption provides enormous convenience and less difficulty in experimental fabrication of photoelectronic devices which are based on finite layer KAgSe. To further explore the photovoltaic behaviors, the polarization angle-related photocurrent is evaluated for the KAgSe monolayer-based nanodevice by irradiating a beam of linearly polarized light to the scattering region. Moreover, large photon responsivity and external quantum efficiency are also obtained for the KAgSe monolayer.

Double D-shaped hole optical fiber coated with graphene as a polarizer

A double D-shaped hole optical fiber coated with graphene is proposed as a polarizer at the wavelength of 1.55 μm. As the planar surfaces of D-shaped holes are both coated with graphene, the interaction between the core and graphene can be doubled. Moreover, the interaction can be further improved by introducing functional materials into the holes. The proposed fiber provides a high extinction ratio (ER) and low insertion loss, and it operates in the single polarization mode. The ER of 42.5 dB with a 2.5-mm-long optical fiber can be achieved for a transverse-electric-pass polarizer, and the insertion loss is approximately 1.08 dB. Specifically, the proposed fiber can achieve simultaneously dual-band polarization at 1.55 μm and 1.31 μm. The proposed fiber is feasible for seamless integration in existing fiber systems. We hope our work benefits high-efficiency polarizers, and we believe that the proposed fiber has some potential applications in photonic integrated circuits.

Gate tunable surface plasmon resonance enhanced graphene/Ag nanoparticles-polymethyl methacrylate/graphene/p-GaN heterostructure light-emitting diodes

By combining the surface plasmon enhancement technique with gating effect, a tunable blue lighting emitting diode (LED) based on graphene/Ag nanoparticles (NPs)-polymethyl methacrylate (PMMA)/graphene/p-GaN heterostructure has been achieved. The surface plasmon enhancement is introduced through spin-coating Ag nanoparticles on graphene/p-GaN heterostructure while the gating effect is demonstrated through a graphene/PMMA/graphene sandwich structure, where the top graphene layer acts as the gate electrode. Compared with initial graphene/p-GaN heterostructure LEDs, the electroluminescence (EL) emission intensity of Ag NPs/graphene/p-GaN heterostructure LEDs has been largely enhanced, attributing to the surface plasmon resonance (SPR) of Ag nanoparticles. The EL emission intensity of graphene/Ag NPs-PMMA/graphene/p-GaN heterostructure LEDs can further be gate-tunable effectively through exerting a static voltage between the sandwich structure, which tunes the Fermi level of graphene contacting with p-GaN. These results indicate that through sophisticated design, graphene/Ag NPs-PMMA/graphene/p-GaN heterostructure LEDs can be a potential candidate for many essential electronic and optoelectronic applications.

High-efficiency energy transfer in perovskite heterostructures

Here, we report the energy transfer in (PEA)₂PbI₄/MAPbBr₃ perovskite heterostructures. Under two-photon excitation, the photoluminescence (PL) emission of the (PEA)₂PbI₄ flake is nearly completely quenched, while that of the MAPbBr₃ microplate is greatly increased (6.5 folds higher) in the heterostructure. The opposite variation character of the PL emissions is attributed to the radiative energy transfer from the (PEA)₂PbI₄ flake to the MAPbBr₃ microplate. The radiative energy transfer occurs on an ultrafast timescale with a high efficiency (~100%). In addition, a strongly thickness- and wavelength-dependent interlayer interaction is observed under one-photon excitation. This work advocates great promise for revealing the interlayer interaction of perovskite heterostructures and developing high-performance optoelectronic devices.

Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles

Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illumination (980 nm) is far beyond the absorption limitation of GaAs (874 nm). This means that the photocurrent originates from the separation of photo-induced carriers in graphene, which is caused by the vertically built-in electric field formed through the high quality van der Waals contact between graphene and GaAs. Moreover, after introducing NaYF4:Yb3+/Er3+ upconversion nanoparticles (UCNPs) onto the graphene/GaAs heterojunction, the responsivity increases to be as superior as 5.97 mA W-1 and the corresponding detectivity is 1.1 × 1011 cm Hz0.5 W-1 under self-driven conditions. This dramatic improvement is mainly ascribed to the radiative energy transfer from UCNPs to the graphene/GaAs heterostructure. The high-quality and self-driven UCNPs/graphene/GaAs heterostructure NIRPD holds significant potential for practical application in low-consumption and large-scale optoelectronic devices.

Graphene, hexagonal boron nitride, and their heterostructures: properties and applications

In recent years, two-dimensional atomic-level thickness crystal materials have attracted widespread interest such as graphene, hexagonal boron nitride (h-BN), silicene, germanium, black phosphorus (BP), transition metal sulfides and so on.

The physics and chemistry of graphene-on-surfaces

This review describes the major “graphene-on-surface” structures and examines the roles of their properties in governing the overall performance for specific applications.

Multi-type quantum dots photo-induced doping enhanced graphene/semiconductor solar cell

ZnO and InP QDs were applied to improve the performance of graphene (Gr)/semiconductor solar cells, which can effectively hop light-induced carriers into Gr by absorbing incident light at the surface; under such cooperative doping, final PCE was improved by 34.2%.

ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W^-1 and detectivity of more than 1.02 × 10¹³ Jones (Jones = cm Hz^1/2 W^-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W^-1 to 1915 A W^-1 and the detectivity is improved from 5.8 × 10¹² to 1.0 × 10¹³ Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.