Color tunable monolithic InGaN/GaN LED having a multi-junction structure

Modelling and Thermographic Measurements of LED Optical Power

This paper presents a simple engineering method for evaluating the optical power emitted by light-emitting diodes (LEDs) using infrared thermography. The method is based on the simultaneous measurement of the electrical power and temperature of an LED and a heat source (resistor) that are enclosed in the same plastic packaging under the same cooling conditions. This ensures the calculation of the optical power emitted by the LED regardless of the value of the heat transfer coefficient. The obtained result was confirmed by comparing it with the standard direct measurement method using an integrated sphere. The values of the estimated optical power using the proposed method and the integrated sphere equipped with a spectrometer were consistent with each other. The tested LED exhibited a high optical energy efficiency, reaching approximately η ≈ 30%. In addition, an uncertainty analysis of the obtained results was performed. Compact modelling based on a thermal resistor network (Rth) and a 3D-FEM analysis were performed to confirm the experimental results.

Integration Technology of Micro-LED for Next-Generation Display

Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors have been widely studied for self-emissive displays. From chips to applications, integration technology plays an indispensable role in micro-LED displays. For example, large-scale display relies on the integration of discrete device dies to achieve extended micro-LED array, and full color display requires integration of red, green, and blue micro-LED units on the same substrate. Moreover, the integration with transistors or complementary metal-oxide-semiconductor circuits are necessary to control and drive the micro-LED display system. In this review article, we summarized the 3 main integration technologies for micro-LED displays, which are called transfer integration, bonding integration, and growth integration. An overview of the characteristics of these 3 integration technologies is presented, while various strategies and challenges of integrated micro-LED display system are discussed.

Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission

In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution. Herein, we introduce adhesive bonding and a chemical wet etching process to monolithically integrate two materials with different bandgap energies for green and red light emission. We successfully transferred AlGaInP-based red LED film onto InGaN-based green LEDs without any cracks or void areas and then separated the green and red subpixel LEDs in a lateral direction; the dual color LEDs integrated by the bonding technique were tunable from the green to red color regions (530–630 nm) as intended. In addition, we studied vertically stacked subpixel LEDs by deeply analyzing their light absorption and the interaction between the top and bottom pixels to achieve ultra-high resolution.

Feature issue introduction: light, energy and the environment, 2015

The feature issue highlights contributions from authors who presented their research at the OSA Light, Energy and the Environment Congress, held in Suzhou, China from 2 to 5 November, 2015.