High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator

Hybrid 3C-silicon carbide-lithium niobate integrated photonic platform

In this paper, we demonstrate a novel hybrid 3C-silicon carbide-lithium niobate (3C-SiC-LN) platform for passive and active integrated nanophotonic devices enabled through wafer bonding. These devices are fabricated by etching the SiC layer, with the hybrid optical mode power distributed between SiC and LN layers through a taper design. We present a racetrack resonator-based electro-optic (EO) phase shifter where the resonator is fabricated in SiC while using LN for EO-effect (r33≈ 27 pm/V). The proposed phase shifter demonstrates efficient resonance wavelength tuning with low voltage-length product (Vπ.Lπ ≈ 2.18 V cm) using the EO effect of LN. This hybrid SiC-LN platform would enable high-speed, low-power, and miniaturized photonic devices (e.g., modulators, switches, filters) operable over a broad range of wavelengths (visible to infrared) with applications in both classical and quantum nanophotonics.

High-Q adiabatic micro-resonators on a wafer-scale ion-sliced 4H-silicon carbide-on-insulator platform

A 4H-silicon carbide-on-insulator (4H-SiCOI) has emerged as a prominent material contender for integrated photonics owing to its outstanding material properties such as CMOS compatibility, high refractive index, and high second- and third-order nonlinearities. Although various micro-resonators have been realized on the 4H-SiCOI platform, enabling numerous applications including frequency conversion and electro-optical modulators, they may suffer from a challenge associated with spatial mode interactions, primarily due to the widespread use of multimode waveguides. We study the suppression of spatial mode interaction with Euler bends, and demonstrate micro-resonators with improved Q values above 1 × 105 on ion-sliced 4H-SiCOI platform with a SiC thickness nonuniformity less than 1%. The spatial-mode-interaction-free micro-resonators reported on the CMOS-compatible wafer-scale 4H-SiCOI platform would constitute an important ingredient for the envisaged large-scale integrated nonlinear photonic circuits.

χ(2) nonlinear photonics in integrated microresonators

Second-order (χ⁽²⁾) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ⁽²⁾ response due to their centrosymmetric structures. A variety of novel material platforms possessing χ⁽²⁾ nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ⁽²⁾ nonlinear effects are introduced. Afterward, we highlight the commonly used χ⁽²⁾ nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ⁽²⁾ nonlinearity in the field of integrated microcavity photonics.

Emerging SiC Applications beyond Power Electronic Devices

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

A 3C-SiC-on-Insulator-Based Integrated Photonic Platform Using an Anodic Bonding Process with Glass Substrates

Various crystalline silicon carbide (SiC) polytypes are emerging as promising photonic materials due to their wide bandgap energies and nonlinear optical properties. However, their wafer forms cannot readily provide a refractive index contrast for optical confinement in the SiC layer, which makes it difficult to realize a SiC-based integrated photonic platform. In this paper, we demonstrate a 3C-SiC-on-insulator (3C-SiCoI)-based integrated photonic platform by transferring the epitaxial 3C-SiC layer from a silicon die to a borosilicate glass substrate using anodic bonding. By fine-tuning the fabrication process, we demonstrated nearly 100% area transferring die-to-wafer bonding. We fabricated waveguide-coupled microring resonators using sulfur hexafluoride (SF₆)-based dry etching and demonstrated a moderate loaded quality (Q) factor of 1.4 × 10⁵. We experimentally excluded the existence of the photorefractive effect in this platform at sub-milliwatt on-chip input optical power levels. This 3C-SiCoI platform is promising for applications, including large-scale integration of linear, nonlinear and quantum photonics.

Novel Photonic Applications of Silicon Carbide

Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

High-Q ultrasensitive integrated photonic sensors based on slot-ring resonator on a 3C-SiC-on-insulator platform

We demonstrate, to the best of our knowledge, the first high-Q silicon carbide (SiC) integrated photonic sensor based on slot-ring resonators on a 3C-SiC-on-insulator (SiCOI) platform. We experimentally demonstrate an intrinsic Q of 17,400 at around 1310 nm wavelength for a slot-ring resonator with 40 µm radius with water cladding. By applying different concentrations of a sodium chloride (NaCl) solution that covers the devices, measured bulk sensitivities of 264-300 nm/RIU (refractive index unit) are achieved in the slot-ring resonator with a 400-450 nm rail width and a 100-200 nm slot width. The device performance for biomolecular layer sensing (BMLS) is proved by the detection of the cardiac biomarker troponin with 248-322 pm/nm surface sensitivity. The reported slot-ring resonators can be of great interest for diverse sensing applications from visible to infrared wavelengths.

Suppression of avoided resonance crossing in microresonators

Kerr frequency comb generation in microresonators is enabled by notable developments in fabrication technology and novel nonlinear material platforms. However, even in a low loss and highly nonlinear microresonator, the avoided resonance crossing may hamper reliable frequency comb generation. We present a method to suppress the avoided resonance crossing induced by polarization mode coupling. Our approach employs a filter waveguide coupled to a microring resonator for selective filtering of the TM₀₀ mode while keeping the operational TE₀₀ mode with low loss. We experimentally demonstrate an avoided-crossing-suppressed microresonator in the AlGaAs-on-insulator platform.

High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 10⁶ were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

Visible and near-infrared microdisk resonators on a 4H-silicon-carbide-on-insulator platform

Wavelength-sized microdisk resonators were fabricated on a single crystalline 4H-silicon-carbide-on-insulator (4H-SiCOI) platform. By carrying out micro-photoluminescence measurements at room temperature, we show that the microdisk resonators support whispering-gallery modes (WGMs) with quality factors up to 5.25×10³ and mode volumes down to 2.61×(λ/n)³ at the visible and near-infrared wavelengths. Moreover, the demonstrated wavelength-sized microdisk resonators exhibit WGMs whose resonant wavelengths are compatible with the zero-phonon lines of silicon related spin defects in 4H-SiCOI, making them a promising candidate for applications in cavity quantum electrodynamics and integrated quantum photonic circuits.

Racetrack microresonator based electro-optic phase shifters on a 3C silicon-carbide-on-insulator platform

We report, to the best of our knowledge, the first demonstration of integrated electro-optic (EO) phase shifters based on racetrack microresonators on a 3C silicon-carbide-on-insulator (SiCOI) platform working at near-infrared wavelengths. By applying DC voltage in the crystalline axis perpendicular to the waveguide plane, we have observed optical phase shifts from the racetrack microresonators whose loaded quality ($ Q $) factors are $\sim\! {30,\!000}$. We show voltage-length product (${{V}_{\pi}} \cdot {{L}_{ \pi}}$) of ${118}\;{{\rm V}\cdot{\rm cm}}$, which corresponds to an EO coefficient ${{r}_{41}}$ of 2.6 pm/V. The SiCOI platform can be used to realize tunable silicon carbide integrated photonic devices that are desirable for applications in nonlinear and quantum photonics over a wide bandwidth that covers visible and infrared wavelengths.

Single-crystal 3C-SiC-on-insulator platform for integrated quantum photonics

Photonic quantum information processing and communication demand highly integrated device platforms, which can offer high-fidelity control of quantum states and seamless interface with fiber-optic networks simultaneously. Exploiting the unique quantum emitter characteristics compatible with photonic transduction, combined with the outstanding nonlinear optical properties of silicon carbide (SiC), we propose and numerically investigate a single-crystal cubic SiC-on-insulator (3C-SiCOI) platform toward multi-functional integrated quantum photonic circuit. Benchmarking with the state-of-the-art demonstrations on individual components, we have systematically engineered and optimized device specifications and functions, including state control via cavity quantum electrodynamics and frequency conversion between quantum emission and telecommunication wavelengths, while also considering the manufacturing aspects. This work will provide concrete guidelines and quantitative design considerations for realizing future SiCOI integrated photonic circuitry toward quantum information applications.

High-Q titanium dioxide micro-ring resonators for integrated nonlinear photonics

We report on the nonlinear characterizations of the titanium dioxide micro-ring resonators (TiO₂ MRRs). By utilizing optimized fabrication processes, high quality factors (Q∼1.4 × 10⁵) doubling that of the previous work are achieved here for TiO₂ MRRs with high-confinement TiO₂ waveguides. The four-wave mixing (FWM) experiment results with low and high signal power demonstrate that, the fabricated TiO₂ MRRs can perform broadband (∼40 nm) wavelength conversion and cascaded FWMs. These achievements pave the way for key nonlinear photonic applications with TiO₂ waveguides and provide an efficient platform for various integrated photonic devices.

Silicon carbide zipper photonic crystal optomechanical cavities

We demonstrate a silicon carbide (SiC) zipper photonic crystal optomechanical cavity. The device is on a 3C-SiC-on-silicon platform and has a compact footprint of ∼30 × 1 μm. The device shows an optical quality of 2800 at telecom and a mechanical quality of 9700 at 12 MHz with an effective mass of ∼3.76 pg. The optical mode and mechanical mode exhibit strong nonlinear interaction, namely, the quadratic spring effect, with a nonlinear spring constant of 3.3 × 10⁴ MHz²/nm. The SiC zipper cavity is potentially useful in sensing and metrology in harsh environments.

High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

We fabricate suspended single-mode optical waveguides and ring resonators in 3C silicon carbide (SiC) that operate at telecommunication wavelength, and leverage post-fabrication thermal annealing to minimize optical propagation losses. Annealed optical resonators yield quality factors of over 41,000, which corresponds to a propagation loss of 7 dB/cm, and is a significant improvement over the 24 dB/cm in the case of the non-annealed chip. This improvement is attributed to the enhancement of SiC crystallinity and a significant reduction of waveguide surface roughness, from 2.4 nm to below 1.7 nm. The latter is attributed to surface layer oxide growth during the annealing step. We confirm that the thermo-optic coefficient, an important parameter governing high-power and temperature-dependent performance of SiC, does not vary with annealing and is comparable to that of bulk SiC. Our annealing-based approach, which is especially suitable for suspended structures, offers a straightforward way to realize high-performance 3C-SiC integrated circuits.

Octave-spanning coherent supercontinuum generation in an AlGaAs-on-insulator waveguide

We demonstrate supercontinuum generation over an octave spaning from 1055 to 2155 nm on the highly nonlinear aluminum gallium arsenide (AlGaAs)-on-insulator platform. This is enabled by the generation of two dispersive waves in a 3-mm-long dispersion-engineered nano-waveguide. The waveguide is pumped at telecom wavelengths (1555 nm) with 3.6 pJ femtosecond pulses. We experimentally validate the coherence of the generated supercontinuum around the pump wavelength (1450-1750 nm), and our numerical simulation shows a high degree of coherence over the full spectrum.

4H-SiC microring resonators for nonlinear integrated photonics

We demonstrate enhanced four-wave mixing (FWM) in high-quality factor, high-confinement 4H-SiC microring resonators via continuous-wave FWM. With the large power buildup effect of the microring resonator, -21.7  dBFWM conversion efficiency is achieved with 79 mW pump power. Thanks to the strong light confinement in SiC-on-insulator (SiCOI) waveguides with submicrometer cross-sectional dimensions, a high nonlinear parameter wγ of 7.4±0.9  W^-1 m^-1 is obtained, from which the nonlinear refractive index (n₂) of 4H-SiC is estimated to be (6.0±0.6)×10^-19  m²/W at the telecom wavelengths. Besides, we are able to engineer the dispersion of a SiCOI waveguide to achieve 3 dB FWM conversion bandwidth of more than 130 nm. This work represents a step toward enabling all-optical signal processing functionalities using highly nonlinear SiCOI waveguides.

Dewetting Metal Nanofilms-Effect of Substrate on Refractive Index Sensitivity of Nanoplasmonic Gold

The localized surface plasmon resonance (LSPR) sensitivity of metal nanostructures is strongly dependent on the interaction between the supporting substrate and the metal nanostructure, which may cause a change in the local refractive index of the metal nanostructure. Among various techniques used for the development of LSPR chip preparation, solid-state dewetting of nanofilms offers fast and cost effective methods to fabricate large areas of nanostructures on a given substrate. Most of the previous studies have focused on the effect of the size, shape, and inter-particle distance of the metal nanostructures on the LSPR sensitivity. In this work, we reveal that the silicon-based supporting substrate influences the LSPR associated refractive index sensitivity of gold (Au) nanostructures designed for sensing applications. Specifically, we develop Au nanostructures on four different silicon-based ceramic substrates (Si, SiO₂, Si₃N₄, SiC) by thermal dewetting process and demonstrate that the dielectric properties of these ceramic substrates play a key role in the LSPR-based refractive index (RI) sensitivity of the Au nanostructures. Among these Si-supported Au plasmonic refractive index (RI) sensors, the Au nanostructures on the SiC substrates display the highest average RI sensitivity of 247.80 nm/RIU, for hemispherical Au nanostructures of similar shapes and sizes. Apart from the significance of this work towards RI sensing applications, our results can be advantageous for a wide range of applications where sensitive plasmonic substrates need to be incorporated in silicon based optoelectronic devices.

High-Q microresonators integrated with microheaters on a 3C-SiC-on-insulator platform

We demonstrate, to the best of our knowledge, the first thermally reconfigurable high-Q silicon carbide (SiC) microring resonators with integrated microheaters on a 3C-SiC-on-insulator platform. We extract a thermo-optic coefficient of around 2.67×10^-5/K for 3C-SiC from wavelength shift of a resonator heated by a hot plate. Finally, we fabricate a 40-μm-radius microring resonator with intrinsic Q of 139,000 at infrared wavelengths (∼1550  nm) after integration with a NiCr microheater. By applying current through the microheater, a resonance shift of 30 pm/mW is achieved in the microring, corresponding to ∼50  mW per π phase shift. This platform offers an easy and reliable way for integration with electronic devices as well as great potential for diverse integrated optics applications.