Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm

Monolithic beam combined quantum cascade laser arrays with integrated arrayed waveguide gratings

Quantum cascade lasers (QCLs) are ubiquitous mid-infrared sources owing to their flexible designs and compact footprints. Manufacturing multiwavelength QCL chips with high power levels and good beam quality is highly desirable for many applications. In this study, we demonstrate an λ ∼ 4.9 µm monolithic, wavelength beam-combined (WBC) infrared laser source by integrating on a single chip array of five QCL gain sections with an arrayed waveguide grating (AWG). Optical feedback from the cleaved facets enables lasing, whereas the integrated AWG locks the emission spectrum of each gain section to its corresponding input channel wavelength and spatially combines their signals into a single-output waveguide. Our chip features high peak power from the common aperture exceeding 0.6 W for each input channel, with a side-mode suppression ratio (SMSR) of over 27 dB when operated in pulsed mode. Our active/passive integration approach allows for a seamless transition from the QCL ridges to the AWG without requiring regrowth or evanescent coupling schemes, leading to a robust design. These results pave the way for the development of highly compact mid-IR sources suitable for applications such as hyperspectral imaging.

High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband

The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-μm waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive 4 × 4 photonic switch operating at the 2-μm waveband with the highest switching speed. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 × 4 implementation, crosstalk below -15 dB and power consumption lower than 19.15 mW across all 16 optical paths are indicated. This result brings high-speed optical switching to the portfolio of devices at the promising waveband.

Integrated Pockels laser

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 1018 Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.

Optical frequency comb generation from a 1.65 µm single-section quantum well laser

Optical frequency combs (OFCs) in the 1.65 µm wavelength band are promising for methane sensing and extended high-capacity optical communications. In this work, a frequency-modulated (FM) OFC is generated from a 1.65 µm single-section quantum well laser. This is characterized by a 1 kHz-wide beatnote signal at ∼19.4 GHz. Typical FM optical spectra are shown and optical linewidth of the OFC narrows through the mutual injection locking process in the comb formation. No distinct pulse train is observed on oscilloscope, which conforms with the FM operation. Furthermore, to add further evidence that four-wave mixing (FWM) is the driving mechanism of the comb formation, FWM frequency conversion characterization is conducted on a semiconductor optical amplifier (SOA) fabricated together with the tested laser. An efficiency of ∼-30 dB confirms the capability of FM mode locking.

Widely tunable silicon-fiber laser at 2 µm

Laser sources operating in the 2 µm spectral region play an important role for sensing and spectroscopy, and potentially for optical communication systems. In this work, we demonstrate a widely tunable hybrid silicon-fiber laser operating in the 2 µm band. By introducing a silicon-integrated Vernier filter in a fiber laser, we achieved continuous wavelength tuning over a range of 100 nm, from 1970 to 2070 nm. Fiber-coupled output power up to 28 mW was measured with a full-width-half-maximum linewidth smaller than 260 kHz and a side-mode-suppression ratio greater than 40 dB over the spectral range.

Sub-kHz linewidth, hybrid III-V/silicon wavelength-tunable laser diode operating at the application-rich 1647-1690 nm

The wavelength region about of 1650 nm enables pervasive applications. Some instances include methane spectroscopy, free-space/fiber communications, LIDAR, gas sensing (i.e. C₂H₂, C₂H₄, C₃H₈), surgery and medical diagnostics. In this work, through the hybrid integration between an III-V optical amplifier and an extended, low-loss wavelength tunable silicon Vernier cavity, we report for the first time, a III-V/silicon hybrid wavelength-tunable laser covering the application-rich wavelength region of 1647-1690 nm. Room-temperature continuous wave operation is achieved with an output power of up to 31.1 mW, corresponding to a maximum side-mode suppression ratio of 46.01 dB. The laser is ultra-coherent, with an estimated linewidth of 0.7 kHz, characterized by integrating a 35 km-long recirculating fiber loop into the delayed self-heterodyne interferometer setup. The laser linewidth is amongst the lowest in hybrid/heterogeneous III-V/silicon lasers.