Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides

Heterogeneously integrated InGaP/Si waveguides for nonlinear photonics

The heterogeneous integration of III-V semiconductors with the Silicon platform enables the merging of photon sources with Silicon electronics while allowing the use of Silicon mature processing techniques. However, the inherent sufficient quality of III-Vs' native oxides made imperative the use of deposited interfacial oxide layers or adhesives to permit the bonding. Here we present a novel approach enabling the heterogeneous integration of structured III-V semiconductors on silicates via molecular bonding at 150 °C, much below the CMOS degradation temperature, is presented. The transfer of 235 nm thick and 2 mm long InGaP waveguides with widths of 4.65, 2.6 and 1.22 μm on 4 μm thick Si thermal oxide, with optional SX AR-N 8200.18 cladding, has been experimentally verified. Post-processing of the 1.20 and 0.60 μm input/output tappers has allowed the implementation of double-inverse tapers. The minimal processing requirements and the compatibility with transferring non-cladded structures of the presented technique are demonstrated. The quality of the transferred waveguides bonding interface and their viability for non-linear optics applications has been tested by means of the surface contribution to the optical non-linearity via modal phase-matched second-harmonic generation.

Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions

III-nitrides provide a versatile platform for nonlinear photonics. In this work, we explore a new promising configuration - composite waveguides containing GaN and AlN layers with inverted polarity, i.e., having opposite signs of the χ(2) nonlinear coefficient. This configuration allows us to address the limiting problem of the mode overlap for nonlinear interactions. Our modelling predicts a significant improvement in the conversion efficiency. We confirm our theoretical prediction with the experimental demonstration of second harmonic generation with an efficiency of 4%W-1cm-2 using a simple ridge waveguide. This efficiency is an order of magnitude higher compared to the previously reported results for III-nitride waveguides. Further improvement, reaching a theoretical efficiency of 30%W-1cm-2, can be achieved by reducing propagation losses.

Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits

Understanding and mitigating optical loss is critical to the development of high-performance photonic integrated circuits (PICs). In particular, in high refractive index contrast compound semiconductor (III-V) PICs, surface absorption and scattering can be a significant loss mechanism, and needs to be suppressed. Here, we quantify the optical propagation loss due to surface state absorption in a suspended GaAs PIC platform, probe its origins using x-ray photoemission spectroscopy and spectroscopic ellipsometry, and show that it can be mitigated by surface passivation using alumina (Al₂O₃).

Modelling second harmonic generation at mid-infrared frequencies in waveguide integrated Ge/SiGe quantum wells

A promising alternative to bulk materials for the nonlinear coupling of optical fields is provided by photonic integrated circuits based on heterostructures made of asymmetric-coupled quantum wells. These devices achieve a huge nonlinear susceptivity but are affected by strong absorption. Here, driven by the technological relevance of the SiGe material system, we focus on Second-Harmonic Generation in the mid-infrared spectral region, realized by means of Ge-rich waveguides hosting p-type Ge/SiGe asymmetric coupled quantum wells. We present a theoretical investigation of the generation efficiency in terms of phase mismatch effects and trade-off between nonlinear coupling and absorption. To maximize the SHG efficiency at feasible propagation distances, we also individuate the optimal density of quantum wells. Our results indicate that conversion efficiencies of ≈ 0.6%/W can be achieved in WGs featuring lengths of few hundreds µm only.

Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits

We report a method for integrating GaAs waveguide circuits containing self-assembled quantum dots on a Si/SiO₂ wafer, using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO₂ enables fabricating single-mode waveguides without compromising the photon-emitter coupling. Anti-bunched emission from individual quantum dots is observed, along with a waveguide propagation loss <7 dB/mm, which is comparable with the performance of suspended GaAs circuits. These results enable the integration of quantum emitters with different material platforms, towards the realization of scalable quantum photonic integrated circuits.

AlGaAs Nonlinear Integrated Photonics

Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others. Numerous nonlinear waveguide platforms have been explored for these roles; the group of materials capable of combining both passive and active functionalities monolithically on the same chip is III–V semiconductors. AlGaAs is the most studied III–V nonlinear waveguide platform to date; it exhibits both second- and third-order optical nonlinearity and can be used for a wide range of integrated nonlinear photonic devices. In this review, we conduct an extensive overview of various AlGaAs nonlinear waveguide platforms and geometries, their nonlinear optical performances, as well as the measured values and wavelength dependencies of their effective nonlinear coefficients. Furthermore, we highlight the state-of-the-art achievements in the field, among which are efficient tunable wavelength converters, on-chip frequency-comb generation, and ultra-broadband on-chip supercontinuum generation. Moreover, we overview the applications in development where AlGaAs nonlinear functional devices aspire to be the game-changers. Among such applications, there is all-optical signal processing in optical communication networks and integrated quantum photonic circuits.

Towards integrated photonic interposers for processing octave-spanning microresonator frequency combs

Microcombs-optical frequency combs generated in microresonators-have advanced tremendously in the past decade, and are advantageous for applications in frequency metrology, navigation, spectroscopy, telecommunications, and microwave photonics. Crucially, microcombs promise fully integrated miniaturized optical systems with unprecedented reductions in cost, size, weight, and power. However, the use of bulk free-space and fiber-optic components to process microcombs has restricted form factors to the table-top. Taking microcomb-based optical frequency synthesis around 1550 nm as our target application, here, we address this challenge by proposing an integrated photonics interposer architecture to replace discrete components by collecting, routing, and interfacing octave-wide microcomb-based optical signals between photonic chiplets and heterogeneously integrated devices. Experimentally, we confirm the requisite performance of the individual passive elements of the proposed interposer-octave-wide dichroics, multimode interferometers, and tunable ring filters, and implement the octave-spanning spectral filtering of a microcomb, central to the interposer, using silicon nitride photonics. Moreover, we show that the thick silicon nitride needed for bright dissipative Kerr soliton generation can be integrated with the comparatively thin silicon nitride interposer layer through octave-bandwidth adiabatic evanescent coupling, indicating a path towards future system-level consolidation. Finally, we numerically confirm the feasibility of operating the proposed interposer synthesizer as a fully assembled system. Our interposer architecture addresses the immediate need for on-chip microcomb processing to successfully miniaturize microcomb systems and can be readily adapted to other metrology-grade applications based on optical atomic clocks and high-precision navigation and spectroscopy.

Efficient Frequency Conversion in a Degenerate χ^{(2)} Microresonator

Microresonators on a photonic chip could enhance nonlinear optics effects and thus are promising for realizing scalable high-efficiency frequency conversion devices. However, fulfilling phase matching conditions among multiple wavelengths remains a significant challenge. Here, we present a feasible scheme for degenerate sum-frequency conversion that only requires the two-mode phase matching condition. When the drive and the signal are both near resonance to the same telecom mode, an on-chip photon-number conversion efficiency up to 42% is achieved, showing a broad tuning bandwidth over 250 GHz. Furthermore, cascaded Pockels and Kerr nonlinear optical effects are observed, enabling the parametric amplification of the optical signal to distinct wavelengths in a single device. The scheme demonstrated in this Letter provides an alternative approach to realizing high-efficiency frequency conversion and is promising for future studies on communications, atom clocks, sensing, and imaging.

Efficient type II second harmonic generation in an indium gallium phosphide on insulator wire waveguide aligned with a crystallographic axis

We theoretically and experimentally investigate type II second harmonic generation in III-V-on-insulator wire waveguides. We show that the propagation direction plays a crucial role and that longitudinal field components can be leveraged for robust and efficient conversion. We predict that the maximum theoretical conversion is larger than that of type I second harmonic generation for similar waveguide dimensions and reach an experimental conversion efficiency of 12%/W, limited by the propagation loss.

AlGaAs-on-insulator waveguide for highly efficient photon-pair generation via spontaneous four-wave mixing

We report on the generation of correlated photon pairs in AlGaAs-on-insulator (AlGaAs-OI) waveguides through nonlinear spontaneous four-wave-mixing (SFWM). Our measurements reveal an SFWM pair generation efficiency of ∼0.096×10¹²pairs/(sW²) at a wavelength of 1550 nm. This is one of the highest efficiencies achieved to date for integrated SFWM sources. A maximal coincidence-to-accidental ratio of ∼122 is measured. A spectral characterization of the device's pair emission at the quantum level demonstrates a broad generation bandwidth of 2.0 THz, which is important for frequency multiplexing applications. Our results indicate that AlGaAs-OI is an efficient material platform for integrated quantum photonics at telecom wavelengths.

Supercontinuum generation in dispersion engineered AlGaAs-on-insulator waveguides

The effect of engineering the dispersion of AlGaAs-on-insulator (AlGaAs-OI) waveguides on supercontinuum generation is investigated at telecom wavelengths. The pronounced effect the waveguide width has on the nonlinear dynamics governing the supercontinua is systematically analyzed and the coherence of the spectra verified with numerical simulations. Using dispersion engineered AlGaAs-OI waveguides, broadband supercontinua were readily obtained for pulse energies of [Formula: see text] and a device length of only 3 mm. The results presented here, further understanding of the design and fabrication of this novel platform and describe the soliton and dispersive wave dynamics responsible for supercontinuum generation. This study showcases the potential of AlGaAs-OI for exploring fundamental physics and realizing highly efficient, compact, nonlinear devices.

Engineering AlGaAs-on-insulator toward quantum optical applications

Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large bandgap for broadband low-loss operation. However, its full potential for record-strength nonlinear interactions is only released when the semiconductor is embedded within a dielectric cladding to produce highly confining waveguides. From simulations of such, we present second- and third-order pair generation that could improve upon state-of-the-art quantum optical sources and make novel regimes of strong parametric photon-photon nonlinearities accessible.

Ultrahigh-Q AlGaAs-on-insulator microresonators for integrated nonlinear photonics

Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a promising candidate for integrated photonics, including both linear and nonlinear devices, passive and active devices, and associated applications. Low propagation loss is essential for integrated photonics, particularly in nonlinear applications. However, achieving low-loss and high-confinement AlGaAs photonic integrated circuits poses a challenge. Here we show an effective reduction of surface-roughness-induced scattering loss in fully etched high-confinement AlGaAs-on-insulator nanowaveguides by using a heterogeneous wafer-bonding approach and optimizing fabrication techniques. We demonstrate ultrahigh-quality AlGaAs microring resonators and realize quality factors up to 3.52 × 10⁶ and finesses as high as 1.4 × 10⁴. We also show ultra-efficient frequency comb generations in those resonators and achieve record-low threshold powers on the order of ∼20 µW and ∼120 µW for the resonators with 1 THz and 90 GHz free-spectral ranges, respectively. Our result paves the way for the implementation of AlGaAs as a novel integrated material platform specifically for nonlinear photonics and opens a new window for chip-based efficiency-demanding practical applications.

Influence of longitudinal mode components on second harmonic generation in III-V-on-insulator nanowires

The large index contrast and the subwalength tranverse dimensions of nanowires induce strong longitudinal electric field components. We show that these components play an important role for second harmonic generation in III-V wire waveguides. To illustrate this behavior, an efficiency map of nonlinear conversion is determined based on full-vectorial calculations. It reveals that many different waveguide dimensions and directions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a higher-order second harmonic mode.

Efficient and highly tunable second-harmonic generation in Z-cut periodically poled lithium niobate nanowaveguides

Thin-film lithium-niobate-on-insulator (LNOI) has emerged as a superior integrated-photonics platform for linear, nonlinear, and electro-optics. Here we combine quasi-phase-matching, dispersion engineering, and tight mode confinement to realize nonlinear parametric processes with both high efficiency and wide wavelength tunability. On a millimeter-long, Z-cut LNOI waveguide, we demonstrate efficient (1900±500%W^-1cm^-2) and highly tunable (-1.71nm/K) second-harmonic generation from 1530 to 1583 nm by type-0 quasi-phase-matching. Our technique is applicable to optical harmonic generation, quantum light sources, frequency conversion, and many other photonic information processes across visible to mid-IR spectral bands.