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Zeng H, He ZQ, Fan YR, Luo Y, Lyu C, Wu JP, Li YB, Liu S, Wang D, Zhang DC, Zeng JJ, Deng GW, Wang Y, Song HZ, Wang Z, You LX, Guo K, Sun CZ, Luo Y, Guo GC, Zhou Q. Quantum Light Generation Based on GaN Microring toward Fully On-Chip Source. PHYSICAL REVIEW LETTERS 2024; 132:133603. [PMID: 38613308 DOI: 10.1103/physrevlett.132.133603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 12/12/2023] [Accepted: 01/29/2024] [Indexed: 04/14/2024]
Abstract
An integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, a new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential toward the monolithic integration of quantum light source. In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5±6.5%, which is further configured to generate a heralded single photon with a typical heralded second-order autocorrelation g_{H}^{(2)}(0) of 0.045±0.001. Our results pave the way for developing a chip-scale quantum photonic circuit.
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Affiliation(s)
- Hong Zeng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhao-Qin He
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Yun-Ru Fan
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yue Luo
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Chen Lyu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jin-Peng Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yun-Bo Li
- Department of Fundamental Network Technology, China Mobile Research Institute, Beijing 100053, China
| | - Sheng Liu
- Department of Fundamental Network Technology, China Mobile Research Institute, Beijing 100053, China
| | - Dong Wang
- Department of Fundamental Network Technology, China Mobile Research Institute, Beijing 100053, China
| | - De-Chao Zhang
- Department of Fundamental Network Technology, China Mobile Research Institute, Beijing 100053, China
| | - Juan-Juan Zeng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Center for Quantum Internet, Tianfu Jiangxi Laboratory, Chengdu 641419, China
| | - Guang-Wei Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - You Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Hai-Zhi Song
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Zhen Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Li-Xing You
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Kai Guo
- Institute of Systems Engineering, AMS, Beijing 100141, China
| | - Chang-Zheng Sun
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Yi Luo
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Guang-Can Guo
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
- Center for Quantum Internet, Tianfu Jiangxi Laboratory, Chengdu 641419, China
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
| | - Qiang Zhou
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
- Center for Quantum Internet, Tianfu Jiangxi Laboratory, Chengdu 641419, China
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
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Huang YK, Wang PH. CMOS-compatible 6-inch wafer integration of photonic waveguides and uniformity analysis. OPTICS EXPRESS 2024; 32:7197-7206. [PMID: 38439407 DOI: 10.1364/oe.515737] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Accepted: 01/26/2024] [Indexed: 03/06/2024]
Abstract
In this work, we demonstrate photonic fabrication by integrating waveguide resonators and groove structures using cost-effective i-line stepper lithography on a 6-inch full wafer. Low-loss silicon nitride (SiN) waveguide can be realized with the quality (Q) factor of waveguide resonators up to 105. In addition, groove structures are also integrated by the full-wafer process, providing long-term stability of coupling and package solutions. The uniformity of different die locations is verified within the full wafer, showing the good quality of the fabricated photonic devices. This process integration of photonic devices provides the potential for mass-productive, high-yield, and high-uniformity manufacturing.
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Wang PH, Lee TH, Huang WH. Fabrication of tapered waveguides by i-line UV lithography for flexible coupling control. OPTICS EXPRESS 2023; 31:4281-4290. [PMID: 36785400 DOI: 10.1364/oe.473623] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 11/01/2022] [Indexed: 06/18/2023]
Abstract
A tapered bus-waveguide is demonstrated to enhance the waveguide-to-cavity coupling by mass-productive, cost-effective i-line UV lithography. Through enlarging the overlap between the evanescent wave and waveguide resonator, we experimentally show that the coupling strength of silicon nitride waveguides can be 7 times stronger than the conventional coupling of a uniform, straight bus-waveguide. For the first time, strong over-coupling is identified at a 400 nm gap and quality factor ≈ 105 without elongating the coupling length. This design relieves the fabrication limits and provides the flexibility for coupling control, especially in the strongly over-coupled regime with i-line UV lithography.
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Wang C, Li J, Yi A, Fang Z, Zhou L, Wang Z, Niu R, Chen Y, Zhang J, Cheng Y, Liu J, Dong CH, Ou X. Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform. LIGHT, SCIENCE & APPLICATIONS 2022; 11:341. [PMID: 36473842 PMCID: PMC9726892 DOI: 10.1038/s41377-022-01042-w] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2022] [Revised: 11/10/2022] [Accepted: 11/17/2022] [Indexed: 06/17/2023]
Abstract
Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible, such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume. Silicon nitride has become the leading CMOS platform for integrated soliton devices, however, it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation. Other materials have emerged such as AlN, LiNbO3, AlGaAs and GaP that exhibit simultaneous second- and third-order nonlinearities. Here, we show that silicon carbide (SiC) -- already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics, MOSFET, and MEMS due to its wide bandgap properties, excellent mechanical properties, piezoelectricity and chemical inertia -- is a new competitive CMOS-compatible platform for nonlinear photonics. High-quality-factor microresonators (Q = 4 × 106) are fabricated on 4H-SiC-on-insulator thin films, where a single soliton microcomb is generated. In addition, we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC. Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.
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Affiliation(s)
- Chengli Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jin Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, 230026, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, China
| | - Ailun Yi
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Zhiwei Fang
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
| | - Liping Zhou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhe Wang
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
| | - Rui Niu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, 230026, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, China
| | - Yang Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jiaxiang Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Ya Cheng
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China
| | - Junqiu Liu
- International Quantum Academy, 518048, Shenzhen, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230026, China.
| | - Chun-Hua Dong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, 230026, Hefei, China.
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, China.
| | - Xin Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China.
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China.
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Platicon microcomb generation using laser self-injection locking. Nat Commun 2022; 13:1771. [PMID: 35365647 PMCID: PMC8975808 DOI: 10.1038/s41467-022-29431-0] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2021] [Accepted: 02/25/2022] [Indexed: 11/24/2022] Open
Abstract
The past decade has witnessed major advances in the development and system-level applications of photonic integrated microcombs, that are coherent, broadband optical frequency combs with repetition rates in the millimeter-wave to terahertz domain. Most of these advances are based on harnessing of dissipative Kerr solitons (DKS) in microresonators with anomalous group velocity dispersion (GVD). However, microcombs can also be generated with normal GVD using localized structures that are referred to as dark pulses, switching waves or platicons. Compared with DKS microcombs that require specific designs and fabrication techniques for dispersion engineering, platicon microcombs can be readily built using CMOS-compatible platforms such as thin-film (i.e., thickness below 300 nm) silicon nitride with normal GVD. Here, we use laser self-injection locking to demonstrate a fully integrated platicon microcomb operating at a microwave K-band repetition rate. A distributed feedback (DFB) laser edge-coupled to a Si3N4 chip is self-injection-locked to a high-Q ( > 107) microresonator with high confinement waveguides, and directly excites platicons without sophisticated active control. We demonstrate multi-platicon states and switching, perform optical feedback phase study and characterize the phase noise of the K-band platicon repetition rate and the pump laser. Laser self-injection-locked platicons could facilitate the wide adoption of microcombs as a building block in photonic integrated circuits via commercial foundry service. ’Here the authors provide the demonstration of platicon comb generation in an integrated photonic chip using laser self-injection locking, They take advantage of platicons generation in normal GVD resonators, which significantly relaxes the material and geometry design restrictions
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Wu K, Zhang Q, Poon AW. Integrated Si 3N 4 microresonator-based quantum light sources with high brightness using a subtractive wafer-scale platform. OPTICS EXPRESS 2021; 29:24750-24764. [PMID: 34614824 DOI: 10.1364/oe.429921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Accepted: 07/13/2021] [Indexed: 06/13/2023]
Abstract
The silicon nitride (Si3N4) platform, demonstrating a moderate third-order optical nonlinearity and a low optical loss compared with those of silicon, is suitable for integrated quantum photonic circuits. However, it is challenging to develop a crack-free, wafer-scale, thick Si3N4 platform in a single deposition run using a subtractive complementary metal-oxide-semiconductor (CMOS)-compatible fabrication process suitable for dispersion-engineered quantum light sources. In this paper, we demonstrate our unique subtractive fabrication process by introducing a stress-release pattern prior to the single Si3N4 film deposition. Our Si3N4 platform enables 950 nm-thick and 8 μm-wide microring resonators supporting whispering-gallery modes for quantum light sources at 1550 nm wavelengths. We report a high photon-pair generation rate of ∼1.03 MHz/mW2, with a high spectral brightness of ∼5×106 pairs/s/mW2/GHz. We demonstrate the first heralded single-photon measurement on the Si3N4 platform, which exhibits a high quality of conditional self-correlation gH(2)(0) of 0.008 ± 0.003.
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Twayana K, Ye Z, Helgason ÓB, Vijayan K, Karlsson M, Torres-Company V. Frequency-comb-calibrated swept-wavelength interferometry. OPTICS EXPRESS 2021; 29:24363-24372. [PMID: 34614683 DOI: 10.1364/oe.430818] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2021] [Accepted: 07/09/2021] [Indexed: 06/13/2023]
Abstract
Lasers are often used to characterize samples in a non-destructive manner and retrieve sensing information transduced in changes in amplitude and phase. In swept wavelength interferometry, a wavelength-tunable laser is used to measure the complex response (i.e. in amplitude and phase) of an optical sample. This technique leverages continuous advances in rapidly tunable lasers and is widely used for sensing, bioimaging and testing of photonic integrated components. However, the tunable laser requires an additional calibration step because, in practice, it does not tune at a constant rate. In this work, we use a self-referenced frequency comb as an optical ruler to calibrate the laser used in swept-wavelength interferometry and optical frequency domain reflectometry. This allows for realizing high-resolution complex spectroscopy over a bandwidth exceeding 10 THz. We apply the technique to the characterization of low-loss integrated photonic devices and demonstrate that the phase information can disentangle intrinsic from coupling losses in the characterization of high-Q microresonators. We also demonstrate the technique in reflection mode, where it can resolve attenuation and dispersion characteristics in integrated long spiral waveguides.
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Liu J, Huang G, Wang RN, He J, Raja AS, Liu T, Engelsen NJ, Kippenberg TJ. High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits. Nat Commun 2021; 12:2236. [PMID: 33863901 PMCID: PMC8052462 DOI: 10.1038/s41467-021-21973-z] [Citation(s) in RCA: 56] [Impact Index Per Article: 18.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2020] [Accepted: 02/17/2021] [Indexed: 01/19/2023] Open
Abstract
Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators with quality factors Q > 10 × 106 can be attained at die-level throughput. Yet, current fabrication techniques do not have sufficiently high yield and performance for existing and emerging applications, such as integrated travelling-wave parametric amplifiers that require meter-long photonic circuits. Here we demonstrate a fabrication technology that meets all requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 × 106, corresponding to 1.0 dB m-1 optical loss, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances, and confirmed via cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB m-1 loss in dies of only 5 × 5 mm2 size. Using a response measurement self-calibrated via the Kerr nonlinearity, we reveal that the intrinsic absorption-limited Q factor of our Si3N4 microresonators can exceed 2 × 108. This absorption loss is sufficiently low such that the Kerr nonlinearity dominates the microresonator's response even in the audio frequency band. Transferring this Si3N4 technology to commercial foundries can significantly improve the performance and capabilities of integrated photonics.
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Affiliation(s)
- Junqiu Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Guanhao Huang
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Rui Ning Wang
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Jijun He
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Arslan S Raja
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Tianyi Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Nils J Engelsen
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Tobias J Kippenberg
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.
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Designing Mid-Infrared Gold-Based Plasmonic Slot Waveguides for CO 2-Sensing Applications. SENSORS 2021; 21:s21082669. [PMID: 33920116 PMCID: PMC8070310 DOI: 10.3390/s21082669] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Revised: 04/01/2021] [Accepted: 04/08/2021] [Indexed: 11/18/2022]
Abstract
Plasmonic slot waveguides have attracted much attention due to the possibility of high light confinement, although they suffer from relatively high propagation loss originating from the presence of a metal. Although the tightly confined light in a small gap leads to a high confinement factor, which is crucial for sensing applications, the use of plasmonic guiding at the same time results in a low propagation length. Therefore, the consideration of a trade-off between the confinement factor and the propagation length is essential to optimize the waveguide geometries. Using silicon nitride as a platform as one of the most common material systems, we have investigated free-standing and asymmetric gold-based plasmonic slot waveguides designed for sensing applications. A new figure of merit (FOM) is introduced to optimize the waveguide geometries for a wavelength of 4.26 µm corresponding to the absorption peak of CO2, aiming at the enhancement of the confinement factor and propagation length simultaneously. For the free-standing structure, the achieved FOM is 274.6 corresponding to approximately 42% and 868 µm for confinement factor and propagation length, respectively. The FOM for the asymmetric structure shows a value of 70.1 which corresponds to 36% and 264 µm for confinement factor and propagation length, respectively.
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