Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 GBd PAM4 signaling with sub-1 dB phase-shifter loss

Design of a silicon Mach-Zehnder modulator via deep learning and evolutionary algorithms

As an essential block in optical communication systems, silicon (Si) Mach-Zehnder modulators (MZMs) are approaching the limits of possible performance for high-speed applications. However, due to a large number of design parameters and the complex simulation of these devices, achieving high-performance configuration employing conventional optimization methods result in prohibitively long times and use of resources. Here, we propose a design methodology based on artificial neural networks and heuristic optimization that significantly reduces the complexity of the optimization process. First, we implemented a deep neural network model to substitute the 3D electromagnetic simulation of a Si-based MZM, whereas subsequently, this model is used to estimate the figure of merit within the heuristic optimizer, which, in our case, is the differential evolution algorithm. By applying this method to CMOS-compatible MZMs, we find new optimized configurations in terms of electro-optical bandwidth, insertion loss, and half-wave voltage. In particular, we achieve configurations of MZMs with a [Formula: see text] bandwidth and a driving voltage of [Formula: see text], or, alternatively, [Formula: see text] with a driving voltage of [Formula: see text]. Furthermore, the faster simulation allowed optimizing MZM subject to different constraints, which permits us to explore the possible performance boundary of this type of MZMs.

Breakthrough in Silicon Photonics Technology in Telecommunications, Biosensing, and Gas Sensing

Silicon photonics has been an area of active research and development. Researchers have been working on enhancing the integration density and intricacy of silicon photonic circuits. This involves the development of advanced fabrication techniques and novel designs to enable more functionalities on a single chip, leading to higher performance and more efficient systems. In this review, we aim to provide a brief overview of the recent advancements in silicon photonic devices employed for telecommunication and sensing (biosensing and gas sensing) applications.

Near-IR & Mid-IR Silicon Photonics Modulators

As the silicon photonics field matures and a data-hungry future looms ahead, new technologies are required to keep up pace with the increase in capacity demand. In this paper, we review current developments in the near-IR and mid-IR group IV photonic modulators that show promising performance. We analyse recent trends in optical and electrical co-integration of modulators and drivers enabling modulation data rates of 112 GBaud in the near infrared. We then describe new developments in short wave infrared spectrum modulators such as employing more spectrally efficient PAM-4 coding schemes for modulations up to 40 GBaud. Finally, we review recent results at the mid infrared spectrum and application of the thermo-optic effect for modulation as well as the emergence of new platforms based on germanium to tackle the challenges of modulating light in the long wave infrared spectrum up to 10.7 μm with data rates of 225 MBaud.

Electro-optic crosslinkable chromophores with ultrahigh electro-optic coefficients and long-term stability

The development of organic electro-optic materials with ultrahigh electro-optic coefficients and high long-term alignment stability is the most challenging topic in this field. Next-generation crosslinkable nonlinear optical chromophore molecular glasses were developed to address this problem. A highly stable EO system including crosslinkable binary chromophores QLD1 and QLD2 or crosslinkable single chromophore QLD3 and multichromophore QLD4 with large hyperpolarizability was synthesized using tetrahydroquinoline as the donor. When the temperature continues to rise after poling, the chromophores modified with anthracene and acrylate can undergo Diels-Alder crosslinking reaction to fix the oriented chromophores through chemical bonds. After crosslinking, the QLD1/QLD2 and QLD2/QLD4 films achieved very high maximum r 33 values of 327 and 373 pm V-1, respectively, which are the highest values reported for crosslinkable chromophore systems. After Diels-Alder cycloaddition, the glass transition temperature of the EO film increased by ∼90 °C to 185 °C, which is higher than for any other pure chromophore films. After being annealed at 85 °C, 99.63% of the initial r 33 value could be maintained for over 500 h. The ultrahigh electro-optic activity and high long-term alignment stability of these materials showed new breakthroughs in organic EO materials for practical device explorations.

Thermo-optic phase shifters based on silicon-on-insulator platform: state-of-the-art and a review

Silicon photonic platforms offer relevance to large markets in many applications, such as optical phased arrays, photonic neural networks, programmable photonic integrated circuits, and quantum computation devices. As one of the basic tuning devices, the thermo-optic phase shifter (TOPS) plays an important role in all these applications. A TOPS with the merits of easy fabrication, low power consumption, small thermal time constant, low insertion loss, small footprint, and low crosstalk, is needed to improve the performance and lower the cost of the above applications. To meet these demands, various TOPS have been proposed and experimentally demonstrated on different foundry platforms In this paper, we review the state-of-the-art of TOPS, including metal heater, doped silicon, silicide, with silicon substrate undercut for heat insulation, folded waveguide structure, and multi-pass waveguide structure. We further compare these TOPSs and propose the directions of the future developments on TOPS.

Advances in integrated ultra-wideband electro-optic modulators [Invited]

Increasing data traffic and bandwidth-hungry applications require electro-optic modulators with ultra-wide modulation bandwidth for cost-efficient optical networks. Thus far, integrated solutions have emerged to provide high bandwidth and low energy consumption in compact sizes. Here, we review the design guidelines and delicate structures for higher bandwidth, applying them to lumped-element and traveling-wave electrodes. Additionally, we focus on candidate material platforms with the potential for ultra-wideband optical systems. By comparing the superiority and mechanism limitations of different integrated modulators, we design a future roadmap based on the recent advances.

Design and synthesis of chromophores with enhanced electro-optic activities in both bulk and plasmonic-organic hybrid devices

This study demonstrates enhancement of in-device electro-optic activity via a series of theory-inspired organic electro-optic (OEO) chromophores based on strong (diarylamino)phenyl electron donating moieties. These chromophores are tuned to minimize trade-offs between molecular hyperpolarizability and optical loss. Hyper-Rayleigh scattering (HRS) measurements demonstrate that these chromophores, herein described as BAH, show >2-fold improvement in β versus standard chromophores such as JRD1, and approach that of the recent BTP and BAY chromophore families. Electric field poled bulk devices of neat and binary BAH chromophores exhibited significantly enhanced EO coefficients (r₃₃) and poling efficiencies (r₃₃/E_p) compared with state-of-the-art chromophores such as JRD1. The neat BAH13 devices with charge blocking layers produced very large poling efficiencies of 11.6 ± 0.7 nm² V^-2 and maximum r₃₃ value of 1100 ± 100 pm V^-1 at 1310 nm on hafnium dioxide (HfO₂). These results were comparable to that of our recently reported BAY1 but with much lower loss (extinction coefficient, k), and greatly exceeding that of other previously reported OEO compounds. 3 : 1 BAH-FD : BAH13 blends showed a poling efficiency of 6.7 ± 0.3 nm² V^-2 and an even greater reduction in k. 1 : 1 BAH-BB : BAH13 showed a higher poling efficiency of 8.4 ± 0.3 nm² V^-2, which is approximately a 2.5-fold enhancement in poling efficiency vs. JRD1. Neat BAH13 was evaluated in plasmonic-organic hybrid (POH) Mach-Zehnder modulators with a phase shifter length of 10 μm and slot widths of 80 and 105 nm. In-device BAH13 achieved a maximum r₃₃ of 208 pm V^-1 at 1550 nm, which is ∼1.7 times higher than JRD1 under equivalent conditions.

Electro-Optic Activity in Excess of 1000 pm V-1 Achieved via Theory-Guided Organic Chromophore Design

High performance organic electro-optic (OEO) materials enable ultrahigh bandwidth, small footprint, and extremely low drive voltage in silicon-organic hybrid and plasmonic-organic hybrid photonic devices. However, practical OEO materials under device-relevant conditions are generally limited to performance of ≈300 pm V^-1 (10× the EO response of lithium niobate). By means of theory-guided design, a new series of OEO chromophores is demonstrated, based on strong bis(4-dialkylaminophenyl)phenylamino electron donating groups, capable of EO coefficients (r₃₃ ) in excess of 1000 pm V^-1 . Density functional theory modeling and hyper-Rayleigh scattering measurements are performed and confirm the large improvement in hyperpolarizability due to the stronger donor. The EO performance of the exemplar chromophore in the series, BAY1, is evaluated neat and at various concentrations in polymer host and shows a nearly linear increase in r₃₃ and poling efficiency (r₃₃ /E_p , E_p is poling field) with increasing chromophore concentration. 25 wt% BAY1/polymer composite shows a higher poling efficiency (3.9 ± 0.1 nm² V^-2 ) than state-of-the-art neat chromophores. Using a high-ε charge blocking layer with BAY1, a record-high r₃₃ (1100 ± 100 pm V^-1 ) and poling efficiency (17.8 ± 0.8 nm² V^-2 ) at 1310 nm are achieved. This is the first reported OEO material with electro-optic response larger than thin-film barium titanate.

Heterogeneously integrated ITO plasmonic Mach-Zehnder interferometric modulator on SOI

Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach–Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule V_πL of 95 V μm, deploying a one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example.

Numerical analyses of optical loss and modulation bandwidth of an InP organic hybrid optical modulator

We numerically analyzed the modulation characteristics of an InP organic hybrid (IOH) optical modulator consisting of an InP slot waveguide and an electro-optic (EO) polymer. Since InP has a higher electron mobility and a lower electron-induced free-carrier absorption than Si, the series resistance of an InP slot waveguide can be significantly reduced with relatively smaller optical loss than an Si slot waveguide. As a result, the trade-off between optical loss and modulation bandwidth can be remarkably improved compared with a Si organic hybrid (SOH) optical modulator. When the modulation bandwidth was designed to be 100 GHz, the optical loss of the IOH modulator was 13-fold smaller than that of the SOH one. The simulation of the eye diagram revealed that the improved optical modulation amplitude enabled the clear eye opening with a 100 Gbps non return-to-zero signal using the IOH modulator. The IOH integration is promising for a high-speed modulator with low energy consumption beyond 100 Gbps.