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Gromovyi M, Bhat N, Tronche H, Baldi P, Kurdi ME, Checoury X, Damilano B, Boucaud P. Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions. OPTICS EXPRESS 2023; 31:31397-31409. [PMID: 37710660 DOI: 10.1364/oe.501221] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 08/28/2023] [Indexed: 09/16/2023]
Abstract
III-nitrides provide a versatile platform for nonlinear photonics. In this work, we explore a new promising configuration - composite waveguides containing GaN and AlN layers with inverted polarity, i.e., having opposite signs of the χ(2) nonlinear coefficient. This configuration allows us to address the limiting problem of the mode overlap for nonlinear interactions. Our modelling predicts a significant improvement in the conversion efficiency. We confirm our theoretical prediction with the experimental demonstration of second harmonic generation with an efficiency of 4%W-1cm-2 using a simple ridge waveguide. This efficiency is an order of magnitude higher compared to the previously reported results for III-nitride waveguides. Further improvement, reaching a theoretical efficiency of 30%W-1cm-2, can be achieved by reducing propagation losses.
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Horváth R, Modica G, Ghorbel I, Beaudoin G, Pantzas K, Sagnes I, Martin A, De Rossi A, Combrié S, Braive R. Sub-Hz Closed-Loop Electro-Optomechanical Oscillator with Gallium Phosphide Photonic Crystal Integrated on SoI Circuitry. ACS PHOTONICS 2023; 10:2540-2548. [PMID: 37602296 PMCID: PMC10437041 DOI: 10.1021/acsphotonics.3c00074] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Indexed: 08/22/2023]
Abstract
We report on a new approach of a low phase noise electro-optomechanical oscillator directly working in the GHz frequency range. The developed nanoscale oscillator is a one-dimensional photonic crystal made of gallium phosphide (GaP), heterogeneously integrated on silicon-on-insulator circuitry. Based on the strong interaction between the optical mode at the telecommunication wavelength and the mechanical mode in GHz, ultra-pure mechanical oscillations are enabled and directly imprinted on an optical carrier. Further stabilization is achieved with a delayed optoelectronic feedback loop using integrated electro-mechanical self-injection. We achieve a short-term stability of 0.7 Hz linewidth and a long-term stability with an Allan deviation below 10-7 Hz/Hz at 10 s averaging time, which represents an important step toward fully integrated optomechanical oscillators. Integrability and the low phase noise of this oscillator address some of the most important needs of optoelectronic oscillators and pave the way toward on-chip integrated microwave oscillators for microwave applications such as RADARs.
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Affiliation(s)
- Róbert Horváth
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Giuseppe Modica
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Inès Ghorbel
- Thales
Research and Technology, Campus Polytechnique, Palaiseau 91120, France
| | - Grégoire Beaudoin
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Konstantinos Pantzas
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Isabelle Sagnes
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Aude Martin
- Thales
Research and Technology, Campus Polytechnique, Palaiseau 91120, France
| | - Alfredo De Rossi
- Thales
Research and Technology, Campus Polytechnique, Palaiseau 91120, France
| | - Sylvain Combrié
- Thales
Research and Technology, Campus Polytechnique, Palaiseau 91120, France
| | - Rémy Braive
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
- Université
Paris Cité, Paris 75006, France
- Institut
Universitaire de France (IUF), Paris 75231, France
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3
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Cheng W, Geng Z, Yu Z, Liu Y, Yang Y, Wu P, Ji H, Yu X, Wang Y, Bao C, Li Y, Zhao Q. Wafer-scale inverted gallium phosphide-on-insulator rib waveguides for nonlinear photonics. OPTICS LETTERS 2023; 48:3781-3784. [PMID: 37450749 DOI: 10.1364/ol.494949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2023] [Accepted: 06/27/2023] [Indexed: 07/18/2023]
Abstract
We report a gallium phosphide-on-insulator (GaP-OI) photonic platform fabricated by an intermediate-layer bonding process aiming to increase the manufacture scalability in a low-cost manner. This is enabled by the "etch-n-transfer" sequence, which results in inverted rib waveguide structures. The shallow-etched 1.8 µm-wide waveguide has a propagation loss of 23.5 dB/cm at 1550 nm wavelength. Supercontinuum generation based on the self-phase modulation effect is observed when the waveguides are pumped by femtosecond pulses. The nonlinear refractive index of GaP, n2, is extracted to be 1.9 × 10-17 m2/W, demonstrating the great promise of the GaP-OI platform in third-order nonlinear applications.
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Kuznetsov A, Moiseev E, Abramov AN, Fominykh N, Sharov VA, Kondratev VM, Shishkin II, Kotlyar KP, Kirilenko DA, Fedorov VV, Kadinskaya SA, Vorobyev AA, Mukhin IS, Arsenin AV, Volkov VS, Kravtsov V, Bolshakov AD. Elastic Gallium Phosphide Nanowire Optical Waveguides-Versatile Subwavelength Platform for Integrated Photonics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2301660. [PMID: 37178371 DOI: 10.1002/smll.202301660] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Revised: 04/09/2023] [Indexed: 05/15/2023]
Abstract
Emerging technologies for integrated optical circuits demand novel approaches and materials. This includes a search for nanoscale waveguides that should satisfy criteria of high optical density, small cross-section, technological feasibility and structural perfection. All these criteria are met with self-assembled gallium phosphide (GaP) epitaxial nanowires. In this work, the effects of the nanowire geometry on their waveguiding properties are studied both experimentally and numerically. Cut-off wavelength dependence on the nanowire diameter is analyzed to demonstrate the pathways for fabrication of low-loss and subwavelength cross-section waveguides for visible and near-infrared (IR) ranges. Probing the waveguides with a supercontinuum laser unveils the filtering properties of the nanowires due to their resonant action. The nanowires exhibit perfect elasticity allowing fabrication of curved waveguides. It is demonstrated that for the nanowire diameters exceeding the cut-off value, the bending does not sufficiently reduce the field confinement promoting applicability of the approach for the development of nanoscale waveguides with a preassigned geometry. Optical X-coupler made of two GaP nanowires allowing for spectral separation of the signal is fabricated. The results of this work open new ways for the utilization of GaP nanowires as elements of advanced photonic logic circuits and nanoscale interferometers.
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Affiliation(s)
- Alexey Kuznetsov
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, St. Petersburg, 199034, Russia
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Eduard Moiseev
- International Laboratory of Quantum Optoelectronics, HSE University, 16 Soyuza Pechatnikov, St. Petersburg, 190008, Russia
| | - Artem N Abramov
- School of Physics and Engineering, ITMO University, 49 Kronverksky Pr., St. Petersburg, 197101, Russia
| | - Nikita Fominykh
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Vladislav A Sharov
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
- Ioffe Institute, Politekhnicheskaya Str. 26, St. Petersburg, 194021, Russia
| | - Valeriy M Kondratev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Ivan I Shishkin
- School of Physics and Engineering, ITMO University, 49 Kronverksky Pr., St. Petersburg, 197101, Russia
| | - Konstantin P Kotlyar
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, St. Petersburg, 199034, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
- Institute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky Pr., 26, St. Petersburg, 190103, Russia
| | - Demid A Kirilenko
- Ioffe Institute, Politekhnicheskaya Str. 26, St. Petersburg, 194021, Russia
| | - Vladimir V Fedorov
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
- Higher School of Engineering Physics, Peter the Great Saint Petersburg Polytechnic University, Politekhnicheskaya 29, Saint Petersburg, 195251, Russia
| | - Svetlana A Kadinskaya
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Alexandr A Vorobyev
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Ivan S Mukhin
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
- School of Physics and Engineering, ITMO University, 49 Kronverksky Pr., St. Petersburg, 197101, Russia
- Higher School of Engineering Physics, Peter the Great Saint Petersburg Polytechnic University, Politekhnicheskaya 29, Saint Petersburg, 195251, Russia
| | - Aleksey V Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - Valentyn S Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
| | - Vasily Kravtsov
- School of Physics and Engineering, ITMO University, 49 Kronverksky Pr., St. Petersburg, 197101, Russia
| | - Alexey D Bolshakov
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, St. Petersburg, 199034, Russia
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
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Anikina MA, Roy P, Kadinskaya SA, Kuznetsov A, Kondratev VM, Bolshakov AD. Numerical Study of GaP Nanowires: Individual and Coupled Optical Waveguides and Resonant Phenomena. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:56. [PMID: 36615966 PMCID: PMC9824084 DOI: 10.3390/nano13010056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Revised: 12/19/2022] [Accepted: 12/20/2022] [Indexed: 06/17/2023]
Abstract
The development of novel nanophotonic devices and circuits necessitates studies of optical phenomena in nanoscale structures. Catalyzed semiconductor nanowires are known for their unique properties including high crystallinity and silicon compatibility making them the perfect platform for optoelectronics and nanophotonics. In this work, we explore numerically optical properties of gallium phosphide nanowires governed by their dimensions and study waveguiding, coupling between the two wires and resonant field confinement to unveil nanoscale phenomena paving the way for the fabrication of the integrated optical circuits. Photonic coupling between the two adjacent nanowires is studied in detail to demonstrate good tolerance of the coupling to the distance between the two aligned wires providing losses not exceeding 30% for the gap of 100 nm. The dependence of this coupling is investigated with the wires placed nearby varying their relative position. It is found that due to the resonant properties of a nanowire acting as a Fabry-Perot cavity, two coupled wires represent an attractive system for control over the optical signal processing governed by the signal interference. We explore size-dependent plasmonic behaviors of the metallic Ga nanoparticle enabling GaP nanowire as an antenna-waveguide hybrid system. We demonstrate numerically that variation of the structure dimensions allows the nearfield tailoring. As such, we explore GaP NWs as a versatile platform for integrated photonic circuits.
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Affiliation(s)
- Maria A. Anikina
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Prithu Roy
- Department of Physics, ITMO University, Kronverkskii 49, 197101 Saint Petersburg, Russia
| | - Svetlana A. Kadinskaya
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Alexey Kuznetsov
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Valeriy M. Kondratev
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Alexey D. Bolshakov
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
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Sultanov V, Santiago-Cruz T, Chekhova MV. Flat-optics generation of broadband photon pairs with tunable polarization entanglement. OPTICS LETTERS 2022; 47:3872-3875. [PMID: 35913336 DOI: 10.1364/ol.458133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 07/07/2022] [Indexed: 06/15/2023]
Abstract
The concept of "flat optics" is quickly conquering different fields of photonics, but its implementation in quantum optics is still in its infancy. In particular, polarization entanglement, strongly required in quantum photonics, is so far not realized on "flat" platforms. Meanwhile, relaxed phase matching of "flat" nonlinear optical sources enables enormous freedom in tailoring their polarization properties. Here we use this freedom to generate photon pairs with tunable polarization entanglement via spontaneous parametric downconversion (SPDC) in a 400-nm GaP film. By changing the pump polarization, we tune the polarization state of photon pairs from maximally entangled to almost disentangled, which is impossible in a single bulk SPDC source. Polarization entanglement, together with the broadband frequency spectrum, results in an ultranarrow (12 fs) Hong-Ou-Mandel effect and promises extensions to hyperentanglement.
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