Thickness dependence of surface plasmon polariton dispersion in transparent conducting oxide films at 1.55 microm

Photonic Characterisation of Indium Tin Oxide as a Function of Deposition Conditions

Indium tin oxide (ITO) has recently gained prominence as a photonic nanomaterial, for example, in modulators, tuneable metasurfaces and for epsilon-near-zero (ENZ) photonics. The optical properties of ITO are typically described by the Drude model and are strongly dependent on the deposition conditions. In the current literature, studies often make several assumptions to connect the optically measured material parameters to the electrical properties of ITO, which are not always clear, nor do they necessarily apply. Here, we present a comprehensive study of the structural, electrical, and optical properties of ITO and showed how they relate to the deposition conditions. We use guided mode resonances to determine the dispersion curves of the deposited material and relate these to structural and electrical measurements to extract all relevant material parameters. We demonstrate how the carrier density, mobility, plasma frequency, electron effective mass, and collision frequency vary as a function of deposition conditions, and that the high-frequency permittivity (ϵ∞) can vary significantly from the value of ϵ∞ = 3.9 that many papers simply assume to be a constant. The depth of analysis we demonstrate allows the findings to be easily extrapolated to the photonic characterisation of other transparent conducting oxides (TCOs), whilst providing a much-needed reference for the research area.

Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect

With the booming development of optoelectronic hybrid integrated circuits, the footprint and power consumption of photonic devices have become the most constraining factors for development. To solve these problems, this paper proposes a compact, extremely low-energy and non-volatile optical readout memory based on ferroelectric electrostatic doping and the epsilon-near-zero (ENZ) effect. The writing/erasing state of an optical circuit is controlled by electrical pulses and can remain non-volatile. The device works on the principle that residual polarization charges of ferroelectric film, which is compatible with CMOS processes, are utilized to electrostatically dope indium tin oxide to achieve the ENZ state. Simulation results show that a significant modulation depth of 10.4 dB can be achieved for a device length of 60 µm with an energy consumption below 1 pJ.

Non-Noble Plasmonic Metal-Based Photocatalysts

Solar-to-chemical energy conversion via heterogeneous photocatalysis is one of the sustainable approaches to tackle the growing environmental and energy challenges. Among various promising photocatalytic materials, plasmonic-driven photocatalysts feature prominent solar-driven surface plasmon resonance (SPR). Non-noble plasmonic metals (NNPMs)-based photocatalysts have been identified as a unique alternative to noble metal-based ones due to their advantages like earth-abundance, cost-effectiveness, and large-scale application capability. This review comprehensively summarizes the most recent advances in the synthesis, characterization, and properties of NNPMs-based photocatalysts. After introducing the fundamental principles of SPR, the attributes and functionalities of NNPMs in governing surface/interfacial photocatalytic processes are presented. Next, the utilization of NNPMs-based photocatalytic materials for the removal of pollutants, water splitting, CO₂ reduction, and organic transformations is discussed. The review concludes with current challenges and perspectives in advancing the NNPMs-based photocatalysts, which are timely and important to plasmon-based photocatalysis, a truly interdisciplinary field across materials science, chemistry, and physics.

Active optical metasurfaces: comprehensive review on physics, mechanisms, and prospective applications

Optical metasurfaces with subwavelength thickness hold considerable promise for future advances in fundamental optics and novel optical applications due to their unprecedented ability to control the phase, amplitude, and polarization of transmitted, reflected, and diffracted light. Introducing active functionalities to optical metasurfaces is an essential step to the development of next-generation flat optical components and devices. During the last few years, many attempts have been made to develop tunable optical metasurfaces with dynamic control of optical properties (e.g., amplitude, phase, polarization, spatial/spectral/temporal responses) and early-stage device functions (e.g., beam steering, tunable focusing, tunable color filters/absorber, dynamic hologram, etc) based on a variety of novel active materials and tunable mechanisms. These recently-developed active metasurfaces show significant promise for practical applications, but significant challenges still remain. In this review, a comprehensive overview of recently-reported tunable metasurfaces is provided which focuses on the ten major tunable metasurface mechanisms. For each type of mechanism, the performance metrics on the reported tunable metasurface are outlined, and the capabilities/limitations of each mechanism and its potential for various photonic applications are compared and summarized. This review concludes with discussion of several prospective applications, emerging technologies, and research directions based on the use of tunable optical metasurfaces. We anticipate significant new advances when the tunable mechanisms are further developed in the coming years.

All-dielectric multifunctional transmittance-tunable metasurfaces based on guided-mode resonance and ENZ effect

Electrically tunable metasurfaces open new doors for manipulating the phase, amplitude and polarization of light in ultrathin layers. Compared with metal assisted metasurfaces, all-dielectric transmission metasurfaces-with outstanding feature of low loss, especially incorporating with new electro-optical materials-show great potential for the next generation flat optics. In this study, by combining the epsilon-near-zero effect in indium tin oxide (ITO) with guided-mode resonance, we propose novel electrically tunable all-dielectric metasurface architectures with versatile functions for widespread potential application. The inserted periodic ITO and hafnium oxide layers sandwiched in silicon act as two metal-oxide-semiconductor capacitors in a single period to disturb the resonance wavelength in the near-infrared spectral range under the voltage applied. For the one-dimensional structure, the transmittances of this metasurface at 1512 and 1510 nm change 20 and -14 dB under 0∼5 V bias voltage, respectively. In addition, the bilayer structure performs well in double-waveband applications, indicating that more layers can support more operation wavebands. Meanwhile, the two-dimensional structure works as a polarization insensitive device when setting the same structural parameters in both orthogonal directions. The proposed architecture, with various merits including ultra-compact size, high-speed and complementary metal-oxide-semiconductor compatibility, provides a multifunctional and multi-degree-of-freedom design, as well as enormous potential applications in more complicated flat optics.

Ultra-low loss hybrid ITO/Si thermo-optic phase shifter with optimized power consumption

Typically, materials with large optical losses such as metals are used as microheaters for silicon based thermo-optic phase shifters. Consequently, the heater must be placed far from the waveguide, which could come at the expense of the phase shifter performance. Reducing the gap between the waveguide and the heater allows reducing the power consumption or increasing the switching speed. In this work, we propose an ultra-low loss microheater for thermo-optic tuning by using a CMOS-compatible transparent conducting oxide such as indium tin oxide (ITO) with the aim of drastically reducing the gap. Using finite element method simulations, ITO and Ti based heaters are compared for different cladding configurations and TE and TM polarizations. Furthermore, the proposed ITO based microheaters have also been fabricated using the optimum gap and cladding configuration. Experimental results show power consumption to achieve a π phase shift of 10 mW and switching time of a few microseconds for a 50 µm long ITO heater. The obtained results demonstrate the potential of using ITO as an ultra-low loss microheater for high performance silicon thermo-optic tuning and open an alternative way for enabling the large-scale integration of phase shifters required in emerging integrated photonic applications.

Modelling the Surface Plasmon Spectra of an ITONanoribbon Grating Adjacent to a LiquidCrystal Layer

The reflection and transmission coefficients of an indium tin oxide (ITO) nanoribbon grating placed between a nematic liquid crystal (LC) layer and an isotropic dielectric medium are calculated in the infrared region. Reflection and transmission spectra in the range of 1–5 μm related to the surface plasmon excitation in the ITO nanoribbons are obtained. Dependence of the peak spectral position on the grating spacing, the ribbon aspect ratio, and the 2D electron concentration in the nanoribbons is studied. It is shown that director reorientation in the LC layer influences the plasmon spectra of the grating, enabling a control of both the reflection and transmission of the system. The data obtained with our model are compared to the results obtained using COMSOL software, giving the similar results.

Ultra-compact non-volatile Mach-Zehnder switch enabled by a high-mobility transparent conducting oxide

Compact and broadband non-volatile silicon devices are mainly absorption based. Hence, access to low-loss non-volatile phase shifters is still a challenge. Here, this problem is addressed by using a high-mobility transparent conducting oxide such as cadmium oxide as a floating gate in a flash-like structure. This structure is integrated in a Mach-Zehnder interferometer switch. Results show an active length of only 30 µm to achieve a $ \pi $π phase shift. Furthermore, an extinction ratio of 20 dB and insertion loss as low as 1 dB may be attained. The device shows an optical broadband response and can be controlled with low-power pulses in the nanosecond range. These results open a new, to the best of our knowledge, way for enabling compact silicon-based phase shifters with non-volatile performance.

Towards Deep Integration of Electronics and Photonics

A combination of computational power provided by modern MOSFET-based devices with light assisted wideband communication at the nanoscale can bring electronic technologies to the next level. Obvious obstacles include a size mismatch between electronic and photonic components as well as a weak light–matter interaction typical for existing devices. Polariton modes can be used to overcome these difficulties at the fundamental level. Here, we review applications of such modes, related to the design and fabrication of electro–optical circuits. The emphasis is made on surface plasmon-polaritons which have already demonstrated their value in many fields of technology. Other possible quasiparticles as well as their hybridization with plasmons are discussed. A quasiparticle-based paradigm in electronics, developed at the microscopic level, can be used in future molecular electronics and quantum computing.

Non-volatile epsilon-near-zero readout memory

The lack of memory effect of silicon makes it unfeasible to store electronic data in photonics. Here we propose a non-volatile readout photonic memory, which is electronically written/erased and optically read. The memory utilizes indium tin oxide as a floating gate and exploits its epsilon-near-zero regime and electro-optic activity. Extinction ratios greater than 10 dB in a bandwidth of 100 nm for a 5 μm long memory are obtained. Furthermore, power consumption in the order of microwatts with retention times of about a decade have been predicted. The proposed structure opens a pathway for developing highly integrated electro-optic devices such as memory banks.

Waveguide-based electro-absorption modulator performance: comparative analysis

Electro-optic modulators perform a key function for data processing and communication. Rapid growth in data volume and increasing bits per second rates demand increased transmitter and thus modulator performance. Recent years have seen the introduction of new materials and modulator designs to include polaritonic optical modes aimed at achieving advanced performance in terms of speed, energy efficiency, and footprint. Such ad hoc modulator designs, however, leave a universal design for these novel material classes of devices missing. Here we execute a holistic performance analysis for waveguide-based electro-absorption modulators and use the performance metric switching energy per unit bandwidth (speed). We show that the performance is fundamentally determined by the ratio of the differential absorption cross-section of the switching material's broadening and the waveguide effective mode area. We find that the former shows highest performance for a broad class of materials relying on Pauli-blocking (absorption saturation), such as semiconductor quantum wells, quantum dots, graphene, and other 2D materials, but is quite similar amongst these classes. In this respect these materials are clearly superior to those relying on free carrier absorption, such as Si and ITO. The performance improvement on the material side is fundamentally limited by the oscillator sum rule and thermal broadening of the Fermi-Dirac distribution. We also find that performance scales with modal waveguide confinement. Thus, we find highest energy-bandwidth-ratio modulator designs to be graphene, QD, QW, or 2D material-based plasmonic slot waveguides where the electric field is in-plane with the switching material dimension. We show that this improvement always comes at the expense of increased insertion loss. Incorporating fundamental device physics, design trade-offs, and resulting performance, this analysis aims to guide future experimental modulator explorations.

Multi-layer MOS capacitor based polarization insensitive electro-optic intensity modulator

In this study, a multi-layer metal-oxide-semiconductor capacitor (MLMOSC) polarization insensitive modulator is proposed. The design is validated by numerical simulation with commercial software LUMERICAL SOLUTION. Based on the epsilon-near-zero (ENZ) effect of indium tin oxide (ITO), the device manages to uniformly modulate both the transverse electric (TE) and the transverse magnetic (TM) modes. With a 20μm-long double-layer metal-oxide-semiconductor capacitor (DLMOSC) polarization insensitive modulator, in which two metal-oxide-semiconductor (MOS) structures are formed by the n-doped Si/HfO₂/ITO/HfO₂/ n-doped Si stack, the extinction ratios (ERs) of both the TE and the TM modes can be over 20dB. The polarization dependent losses of the device can be as low as 0.05dB for the "OFF" state and 0.004dB for the "ON" state. Within 1dB polarization dependent loss, the device can operate with over 20dB ERs at the S, C, and L bands. The polarization insensitive modulator offers various merits including ultra-compact size, broadband spectrum, and complementary metal oxide semiconductor (CMOS) compatibility.

Tunable near-infrared epsilon-near-zero and plasmonic properties of Ag-ITO co-sputtered composite films

Series of co-sputtered silver-indium tin oxide (Ag-ITO) films are systematically fabricated. By tuning the atomic ratio of silver, composite films are manifested to have different microstructures with limited silver amount (<3 at.%). Two stages for film morphology changing are proposed to describe different status and growth mechanisms. The introduction of silver improves the preferred orientations of In2O3 component significantly. Remarkably, dielectric permittivity of Ag-ITO films is highly adjustable, allowing the cross-over wavelengths λc to be changed by more than 300 nm through rapid post-annealing, and thus resulting in tunable epsilon-near-zero and plasmonic properties in the near-infrared region. Lower imaginary permittivity compared with pure metal films, as well as larger tunability in λc than pure ITO films suggest the potentiality of Ag-ITO films as substituted near-infrared plasmonic materials. Extended Maxwell-Garnett model is applied for effective medium approximation and the red-shifting of epsilon-near-zero region with the increase of silver content is well-fitted. Angle-variable prism coupling is carried out to reveal the surface plasmon polariton features of our films at optical communication wavelength. Broad dips in reflectance curves around 52-56° correspond to the SPP in Ag-ITO films.

Active flat optics using a guided mode resonance

Dynamically-controlled flat optics relies on achieving active and effective control over light-matter interaction in ultrathin layers. A variety of metasurface designs have achieved efficient amplitude and phase modulation. Particularly, noteworthy progress has been made with the incorporation of newly emerging electro-optical materials into such metasurfaces, including graphene, phase change materials, and transparent conductive oxides. In this Letter, we demonstrate dynamic light-matter interaction in a silicon-based subwavelength grating that supports a guided mode resonance. By overcoating the grating with indium tin oxide as an electrically tunable material, its reflectance can be tuned from 4% to 86%. Guided mode resonances naturally afford higher optical quality factors than the optical antennas used in the construction of metasurfaces. As such, they facilitate more effective control over the flow of light within the same layer thickness.

Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region

Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  10(21) cm(-3) with the lowest corresponding resistivity of 2.41  ×  10(-4) Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range.

Analysis of light-emission enhancement of low-efficiency quantum dots by plasmonic nano-particle

In this paper, a nano-pillar array integrated near quantum dots (QDs), which serves as a Purcell cavity as well as a column antenna, is studied in order to enhance the spontaneous emission (SE) rate of low emission efficiency QDs. A systematic analysis for treating the isolated nano-pillar and loose ordered pillar is demonstrated by solving the electromagnetic field equations. As an illustrative example of potential applications, we proposed a new structure that Germanium (Ge) QDs are located in close proximity to the isolated Indium Tin Oxide (ITO) nano-pillar to raise its efficiency. From the results of numerical calculation, it is predicted that ITO pillars with slim (e.g., the radius is 25 nm and the height is 500 nm) and flat morphology (e.g., the radius is 40 nm and the height is 60 nm) exhibit superior enhancement over 20 folds. Finite difference time domain (FDTD) simulation is utilized for demonstrating the distinctive enhancement when QDs radiate at surface plasmonic resonance frequency of ITO nano-pillar. It can be found that the QDs emission enhancement profile accords with our results obtained from numerical analysis.

Free-carrier electro-refraction modulation based on a silicon slot waveguide with ITO

Recently, silicon-waveguide-based hybrid modulators with high-performance electro-optic materials have been proposed to overcome the intrinsic limitations of silicon materials. Indium-tin-oxide (ITO) is one of the important candidates for such applications due to its unique features including the ENZ effect and electrically tunable permittivity. In this paper, we propose an ultra-compact integrated phase modulator which consists of a silicon slot waveguide with a thin ITO film in the slot region. In the near-infrared regime, bias-voltage-dependent free-carrier accumulation at the dielectric-ITO interface induces an epsilon-near-zero (ENZ) effect, and contributes to the strong phase modulation of the guided electromagnetic wave. With a voltage swing of 2 V, the device experiences a large variation of the effective modal index, resulting in a π radian phase shift within the device length of <5 μm at 210 THz according to our computer simulations. A high modulation efficiency of V(π)L(π)~0.0071 V·cm and a large device bandwidth of ~70 GHz suggest a potential for an ultra-compact optoelectronic component in the integrated silicon photonics platform.

Nanoscale conducting oxide PlasMOStor

We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/μm) and low waveguide loss (∼0.45 dB/μm). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.

ITO/Au/ITO sandwich structure for near-infrared plasmonics

ITO/Au/ITO trilayers with varying gold spacer layer thicknesses were deposited on glass substrates by pulsed laser deposition. Transmission electron microscopy measurements demonstrated the continuous nature of the Au layer down to 2.4 nm. XRD patterns clearly showed an enhanced crystallinity of the ITO films promoted by the insertion of the gold layer. Compared with a single layer of ITO with a carrier concentration of 7.12 × 10(20) cm(-3), the ITO/Au/ITO structure achieved an effective carrier concentration as high as 3.26 × 10(22) cm(-3). Transmittance and ellipsometry measurements showed that the optical properties of ITO/Au/ITO films were greatly influenced by the thickness of the inserted gold layer. The cross-point wavelength of the trilayer samples was reduced with increasing gold layer thickness. Importantly, the trilayer structure exhibited a reduced loss (compared with plain Au) in the near-infrared region, suggesting its potential for plasmonic applications in the near-infrared range.

Broadband electro-optical modulator based on transparent conducting oxide

We report a broadband electro-optical (EO) modulator based on tunable plasmonic metamaterial. Transparent conducting oxides provide an excellent active plasmonic material for optoelectronic applications. By utilizing our indium-tin-oxide- (ITO) based multilayer structure, light absorption of the active ITO layer can be electrically modulated over a large spectrum range. Based on the attenuated total reflectance configuration, bias polarity-dependent modulation up to 37% has been experimentally demonstrated. This EO modulator has advantages of simple design, easy fabrication, compact size, broadband performance, large modulation depth, as well as compatibility with existing silicon photonics platforms.

Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO₂/ITO/Cu stack for CMOS backend integration

An ultra-compact electro-absorption (EA) modulator operating around 1.55-μm telecom wavelengths is proposed and theoretically investigated. The modulator is comprised of a stack of TiN/HfO2</ITO/Cu conformally deposited on a single-mode stripe waveguide to form a hybrid plasmonic waveguide (HPW). Since the thin ITO layer can behave as a semiconductor, the stack itself forms a MOS capacitor. A voltage is applied between the Cu and TiN layers to change the electron concentration of ITO (NITO), which in turn changes its permittivity as well as the propagation loss of HPW. For a HPW comprised of a Cu/3-nm-ITO/5-nm-HfO2/5-nm-TiN stack on a 400-nm × 340-nm-Si stripe waveguide, the propagation loss for the 1.55-μm TE (TM) mode increases from 1.6 (1.4) to 23.2 (23.9) dB/μm when the average NITO in the 3-nm ITO layer increases from 2 × 10(20) to 7 × 10(20) cm(-3), which is achieved by varying the voltage from -2 to 4 V if the initial NITO is 3.5 × 10(20) cm(-3). As a result, a 1-μm-long EA modulator inserted in the 400-nm × 340-nm-Si stripe waveguide exhibits insertion loss of 2.9 (3.2) dB and modulation depth of 19.9 (15.2) dB for the TE (TM) mode. The modulation speed is ~11 GHz, limited by the RC delay, and the energy consumption is ~0.4 pJ/bit. The stack can also be deposited on a low-index-contrast waveguide such as Si3N4. For example, a 4-μm-long EA modulator inserted in an 800-nm × 600-nm-Si3N4 stripe waveguide exhibits insertion loss of 6.3 (3.5) dB and modulation depth of 16.5 (15.8) dB for the TE (TM) mode. The influences of the ITO, TiN, HfO2 layers and the beneath dielectric core, as well as the processing tolerance, on the performance of the proposed EA modulator are systematically investigated.

Electro-optical modulation of a silicon waveguide with an "epsilon-near-zero" material

Accumulating electrons in transparent conductive oxides such as indium tin oxide (ITO) can induce an "epsilon-near-zero" (ENZ) in the spectral region near the important telecommunications wavelength of λ = 1.55 μm. Here we theoretically demonstrate highly effective optical electro-absorptive modulation in a silicon waveguide overcoated with ITO. This modulator leverages the combination of a local electric field enhancement and increased absorption in the ITO when this material is locally brought into an ENZ state via electrical gating. This leads to large changes in modal absorption upon gating. We find that a 3 dB modulation depth can be achieved in a non-resonant structure with a length under 30 μm for the fundamental waveguide modes of either linear polarization, with absorption contrast values as high as 37. We also show a potential for 100 fJ/bit modulation, with a sacrifice in performance.

Active unidirectional propagation of surface plasmons at subwavelength slits

Highly efficient, active and compact, unidirectional surface plasmon (SP) propagator composed of double subwavelength slits; filled with organic electro-optic (EO) material is proposed and investigated. By selecting appropriate structure parameters, obtained by solving phase relations between slits, the relative phase of SP generated at the slit exit aperture can be tailored. Simulation results show under normal illumination and external voltage of 8.7 V, SP launching efficiency of 55% and unidirectional SP extinction ratio about 47dB at wavelength of 632.8 nm is achieved. The power consumption of the structure is on the order of 9 fJ/bit which meet the power consumption limitation for optical devices. Moreover, the structure is very compact with effective total length of 1.2 µm and thickness of 0.6 µm.

Probing losses of dielectric multilayers by means of Bloch surface waves

We exploit the excitation of electromagnetic surface waves on high-quality dielectric multilayers to measure the very low extinction coefficient of the structures, with a resolution down to 4·10(-7) and in a simple optical configuration. The effect of exposition to a rhodamine 6G solution in water and ethanol is also reported, including dye adsorption in the layers and bleaching upon resonant excitation.

Photonic signal processing on electronic scales: electro-optical field-effect nanoplasmonic modulator

We develop a highly efficient approach for the modulation of photonic signals at the nanoscale, combining an ultrasubwavelength plasmonic guiding scheme with a robust electroabsorption effect in degenerate semiconductors. We numerically demonstrate an active electro-optical field-effect nanoplasmonic modulator with a revolutionary size of just 25 × 30 × 100 nm(3), providing signal extinction ratios as high as 2 at switching voltages of only 1 V. The design is compatible with complementary metal-oxide-semiconductor (CMOS) technology and allows low-loss insertion in standard plasmonic and Si-photonic circuitry.

Surface plasmon polariton absorption modulator

An electrically controlled ultra-compact surface plasmon polariton absorption modulator (SPPAM) is proposed. The device can be as small as a few micrometers depending on the required extinction ratio and the acceptable loss. The device allows for operation far beyond 100 Gbit/s, being only limited by RC time constants. The absorption modulator comprises a stack of metal/insulator/metal-oxide/metal layers, which support a strongly confined asymmetric surface plasmon polariton (SPP) in the 1.55 μm telecommunication wavelength window. Absorption modulation is achieved by electrically modulating the free carrier density in the intermediate metal-oxide layer. The concept is supported by proof-of-principle experiments.

Plasmon polaritons in the near infrared on fluorine doped tin oxide films

Here we investigate plasmon polaritons in fluorine doped tin oxide (FTO) films. By fitting reflectance and transmittance measurements as a function of wavelength lambda epsilon [1.0microm, 2.5microm] we derive a Drude dispersion relation of the free electrons in the transparent conducting oxide films. Then we compute the dispersion curves for the bulk and surface modes together with a reflectance map over an extended wavelength region (lambda==>10microm). Although the surface polariton dispersion for a single FTO/air interface when neglecting damping should appear clearly in the plots in the considered region (since it is supposedly far and isolated from other resonances), a complex behaviour can arise. This is due to different characteristic parameters, such as the presence of a finite extinction coefficient, causing an enlargement and backbending of the feature, and the low film thickness, via coupling between the modes from both the glass/FTO and FTO/air interfaces. Taking into account these effects, computations reveal a general behaviour for thin and absorbing conducting films. They predict a thickness dependent transition region between the bulk polariton and the surface plasmon branches as previously reported for indium tin oxide. Finally, attenuated total reflection measurements vs the incidence angle are performed over single wavelengths lines R(theta) (lambda= 0.633,0.830,1.300,1.550microm) and over a two dimensional domain R(theta,lambda) in the near infrared region lambda epsilon [1.45microm, 1.59microm]. Both of these functions exhibit a feature which is attributed to a bulk polariton and not to a surface plasmon polariton on the basis of comparison with spectrophotometer measurements and modeling. The predicted range for the emergence of a surface plasmon polariton is found to be above lambda >or= 2.1microm, while the optimal film thickness for its observation is estimated to be around 200nm.