Ultrahigh-efficiency apodized grating coupler using fully etched photonic crystals

Ultralow-loss optical interconnect enabled by topological unidirectional guided resonance

Grating couplers that interconnect photonic chips to off-chip components are crucial for various optoelectronics applications. Despite numerous efforts in past decades, the existing grating couplers are still far from optimal in energy efficiency and thus hinder photonic integration toward a larger scale. Here, we propose a strategy to achieve ultralow-loss grating couplers by using unidirectional guided resonances (UGRs), suppressing the useless downward radiation with no mirror on the bottom. By engineering the dispersion and apodizing the geometry of grating, we experimentally realize a grating coupler with a record-low loss of -0.34 dB and 1-dB bandwidth exceeding 30 nm at the telecom wavelength of 1550 nm and further demonstrate an optic via with a loss of only -0.94 dB. Given that UGRs ubiquitously exist in a variety of grating geometries, our work sheds light on a systematic method to achieve energy-efficient optical interconnect and paves the way to large-scale photonic integration.

Efficient low-reflection fully etched vertical free-space grating couplers for suspended silicon photonics

We design and fabricate a grating coupler for interfacing suspended silicon photonic membranes with free-space optics while being compatible with single-step lithography and etching in 220 nm silicon device layers. The grating coupler design simultaneously and explicitly targets both high transmission into a silicon waveguide and low reflection back into the waveguide by means of a combination of a two-dimensional shape-optimization step followed by a three-dimensional parameterized extrusion. The designed coupler has a transmission of -6.6 dB (21.8 %), a 3 dB bandwidth of 75 nm, and a reflection of -27 dB (0.2 %). We experimentally validate the design by fabricating and optically characterizing a set of devices that allow the subtraction of all other sources of transmission losses as well as the inference of back-reflections from Fabry-Pérot fringes, and we measure a transmission of 19 % ± 2 %, a bandwidth of 65 nm and a reflection of 1.0 % ± 0.8 %.

Efficient and fabrication error tolerant grating couplers on the InP membrane on silicon platform

In order to couple light between photonic integrated circuits and optical fibers, grating couplers are commonly employed. This paper describes the design and fabrication of deep and shallow-etched grating couplers with a metal back-reflector with record low insertion losses in InP-based platforms. The measured insertion losses for deep and shallow-etched gratings are 2.4 and 2.6 dB, respectively. Additionally, fabrication error tolerances in shallow etched grating couplers have been examined experimentally, which showed high tolerance of this structure toward the grating period and fill factor.

Hybrid microwave-optical scanning probe for addressing solid-state spins in nanophotonic cavities

Spin-photon interfaces based on solid-state atomic defects have enabled a variety of key applications in quantum information processing. To maximize the light-matter coupling strength, defects are often placed inside nanoscale devices. Efficiently coupling light and microwave radiation into these structures is an experimental challenge, especially in cryogenic or high vacuum environments with limited sample access. In this work, we demonstrate a fiber-based scanning probe that simultaneously couples light into a planar photonic circuit and delivers high power microwaves for driving electron spin transitions. The optical portion achieves 46% one-way coupling efficiency, while the microwave portion supplies an AC magnetic field with strength up to 9 Gauss at 10 Watts of input microwave power. The entire probe can be scanned across a large number of devices inside a ³He cryostat without free-space optical access. We demonstrate this technique with silicon nanophotonic circuits coupled to single Er³⁺ ions.

Deterministic design of focusing apodized subwavelength grating coupler based on weak form and transformation optics

The focusing apodized subwavelength grating coupler (F-ASGC) has advantages of high coupling efficiency, small footprint and simple fabrication process, which make it a popular component for chip-scale coupling and testing of integrated optical circuit. However, the design of F-ASGC based on effective medium theory lacks accuracy, causing the drawbacks of peak wavelength deviation and performance degradation. In this work, we propose a deterministic design method of F-ASGC. Our grating coupler is formed by assembling various subwavelength grating units according to their complex effective indexes. The complex effective indexes of these grating units are accurately obtained by the weak form calculation. Then combining with transformation optics, we strictly analyze the F-ASGC for the first time. The simulation results show that the deterministically designed F-ASGC has high coupling efficiency of -2.51 dB, 3 dB bandwidth of 51 nm, and accurate central wavelength of 1553.1 nm. And we also fabricated it on the commercial SOI wafer. The measured maximum efficiency is -3.10 dB, the 3 dB bandwidth is 55 nm, and the central wavelength is 1551.5 nm.

Low-loss, low-crosstalk waveguide crossing for scalable integrated silicon photonics applications

A waveguide crossing based on multi-mode interference is designed and experimentally characterized on the silicon platform. The insertion loss of the device is measured as 43 ± 4 mdB per crossing, with a crosstalk of < -50 dB between 1550 and 1560 nm, in good agreement with predictions from 3D finite-difference time-domain simulations. Furthermore, the device backscatter was investigated using white light reflectometry and no significant backscatter was observed from 160 waveguide crossings in the time domain. In the frequency domain, the backscatter of the waveguide crossing device was measured experimentally for the first time, achieving a backscatter of -55 dB. The crossing has a footprint of 14.3 x 14.3 µm² and can be fabricated in a single step.

Efficient arsenic trisulfide vertical grating coupler on lithium niobate for integrated photonic applications

An efficient vertical grating coupler design for arsenic trisulfide (As₂S₃) on silicon dioxide (SiO₂) on lithium niobate (LN) is proposed, fabricated, and experimentally verified. We report 4 dB coupling efficiency per grating for vertical fiber coupling at a wavelength of 1550 nm with a 3 dB bandwidth of 40 nm using an aluminum reflector mirror between the LN and SiO₂ interface. This coupler is the first step towards the demonstration of high-performance integrated photonic devices, which would simultaneously benefit from the acousto-optic properties of As₂S₃ and electro-optic and acoustic properties of LN. This hybrid platform is deemed to impact a broad range of applications such as imaging, ranging, and inertial sensing.

A high efficiency silicon nitride waveguide grating coupler with a multilayer bottom reflector

We propose a high efficiency apodized grating coupler with a bottom reflector for silicon nitride photonic integrated circuits. The reflector consists of a stack of alternate silicon nitride and silicon dioxide quarter-wave films. The design, fabrication and optical characterization of the couplers has been presented. The measured fiber to detector insertion loss was −3.5 dB which corresponds to a peak coupling efficiency of −1.75 dB. A 3 dB wavelength bandwidth of 76.34 nm was demonstrated for the grating coupler with a 20-layer reflector. The fabrication process is CMOS-compatible and requires only a single etching step.

Two-dimensional silicon photonic grating coupler with low polarization-dependent loss and high tolerance

We design and demonstrate a two-dimensional grating coupler with an elliptical-like etching pattern on the silicon-on-insulator platform. The polarization-dependent loss of the fabricated device is measured to be 0.2 dB at the C-band, lower than that of most conventional 2D GCs. The etching unit can be easily fabricated with a large tolerance of ± 10 nm and a large feature size of 310nm, which is beneficial to its manufacturing process and wide application.

Broadband 1310/1550 nm wavelength demultiplexer based on a multimode interference coupler with tapered internal photonic crystal for the silicon-on-insulator platform

We design and experimentally demonstrate a broadband 1310/1550 nm wavelength demultiplexer based on a multimode interference coupler with a tapered internal photonic crystal (PC) structure for the silicon-on-insulator platform. The tapered internal PC structure is engineered to reflect the C-band light while transmitting the O-band light. Novel PC nanotapers are introduced for the internal PC structure that effectively suppress the sidelobe of the photonic bandgap and enable our device to be operable over the O-band. The device was fabricated using electron beam lithography, and its performance has been experimentally characterized. The measured extinction ratios are higher than 15 dB over a 74 nm bandwidth from 1286 to 1360 nm at the O-band, and over a 103 nm bandwidth from 1527 to 1630 nm that covers the C-band and the L-band.

Efficient unidirectional and broadband vertical-emitting optical coupler assisted by aperture-coupled nanopatch antenna array

Vertical-emitting optical couplers that convert in-plane guided light to out-of-plane emission are crucial elements for future photonic integrated circuits. However, traditional vertical-coupling elements, such as grating couplers, by default radiate light in both upward and downward directions, leading to a significant reduction of device efficiency. In this paper, we propose to solve this problem using a novel nanopatch antenna array, inspired by patch antenna theories commonly deployed in microwave circuits. The proposed nanopatch array features an up-to-down emission directionality up to 12.91 dBc and a wide operating bandwidth of over 400 nm simultaneously. Compared with a typical waveguide grating antenna, our design shows a significantly higher free-space gain of 24.27 dBi. The unidirectional, efficient, and broadband antenna arrays presented here are promising for a range of integrated photonics applications, including inter-chip photonic interconnects, light ranging and detection, optical communications, and biological imaging.

All-silicon interferometer with multimode waveguides for temperature-insensitive filters and compact biosensors

We report a novel design of an all-silicon temperature-independent filter employing a Mach-Zehnder interferometer (MZI) with multimode waveguides. The two arms of the MZI have equal lengths and equal widths but propagate different modes having different effective indices to guarantee an optical path difference (OPD) but similar temperature-dependence to diminish any thermal shifts of the interference pattern. A temperature-independent MZI filter with only one channel is also proposed and experimentally demonstrated. Measurements verify the principle of operation and a low temperature sensitivity of -20 to 10 pm/°C in the C-band for both MZI filters is achieved. The one-channel MZI structure is furthermore employed to achieve a compact sensor exhibiting a high sensitivity of 826 nm/RIU (refractive index unit).

High positional freedom SOI subwavelength grating coupler (SWG) for 300 mm foundry fabrication

We present an apodized, single etch-step, subwavelength grating (SWG) high positional freedom (HPF) grating coupler based on the 220 nm silicon-on-insulator (SOI) with 2μm BOX substrate. The grating coupler was designed for 1550 nm light with transverse electric (TE) polarization. It has a measured maximum coupling efficiency of -7.49 dB (17.8%) and a -1 dB/-3 dB bandwidth of ~14 nm/29.5 nm respectively. It was fabricated in a 300mm state of the art CMOS foundry. This work presents an SOI-based grating coupler with the highest-to the best of our knowledge- -1 dB single mode fiber lateral alignment of 21.4 μm × 10.1 μm.

Photonic waveguide to free-space Gaussian beam extreme mode converter

Integration of photonic chips with millimeter-scale atomic, micromechanical, chemical, and biological systems can advance science and enable new miniaturized hybrid devices and technology. Optical interaction via small evanescent volumes restricts performance in applications such as gas spectroscopy, and a general ability to photonically access optical fields in large free-space volumes is desired. However, conventional inverse tapers and grating couplers do not directly scale to create wide, high-quality collimated beams for low-loss diffraction-free propagation over many millimeters in free space, necessitating additional bulky collimating optics and expensive alignment. Here, we develop an extreme mode converter, which is a compact planar photonic structure that efficiently couples a 300 nm × 250 nm silicon nitride high-index single-mode waveguide to a well-collimated near surface-normal Gaussian beam with an ≈160 µm waist, which corresponds to an increase in the modal area by a factor of >105. The beam quality is thoroughly characterized, and propagation over 4 mm in free space and coupling back into a single-mode photonic waveguide with low loss via a separate identical mode converter is demonstrated. To achieve low phase error over a beam area that is >100× larger than that of a typical grating coupler, our approach separates the two-dimensional mode expansion into two sequential separately optimized stages, which create a fully expanded and well-collimated Gaussian slab mode before out-coupling it into free space. Developed at 780 nm for integration with chip-scale atomic vapor cell cavities, our design can be adapted for visible, telecommunication, or other wavelengths. The technique can be expanded to more arbitrary phase and intensity control of both large-diameter, free-space optical beams and wide photonic slab modes.

Experimentally validated full-vectorial model of wavelength multicasting via four-wave mixing in straight waveguides

We derive full-vectorial nonlinear propagation equations of dual-pumped four-wave mixing in straight waveguides, which are valid in characterizing the one-to-six wavelength multicasting. Special attention is paid to the resulting idler wavelengths and their conversion efficiency, which enables the optimization of the experimental designs, including the incident wavelength and the power of pumps and signal. We validate the model by comparing the numerical simulation to the experimental measurement in a silicon-on-insulator waveguide, for the first time to our best knowledge, and achieve a good agreement. We further derive the general form of the proposed model for the case of using multiple,pumps, which holds a potential to numerically predict the performance of complex wavelength multicasting, and essentially guide the waveguide designs.

Silicon waveguide grating coupler based on a segmented grating structure

We present the simulation, fabrication, and experimental results of a high-efficiency and wide-bandwidth segmented waveguide grating coupler on a silicon-on-insulator platform for near vertical optical coupling between the waveguide and optical fiber. The coupler comprises segmented gratings, which can increase vertical coupling to the optical fiber and reduce backward reflection. The proposed grating coupler has a 3 dB bandwidth of 71.4 nm and a coupling efficiency of 51.7% at a wavelength of 1550 nm. Compared with the standard uniform waveguide grating coupler, the coupling efficiency was improved by 25.64%.

A compact silicon grating coupler based on hollow tapered spot-size converter

A new compact silicon grating coupler enabling fibre-to-chip light coupling at a minimized taper length is proposed. The proposed coupler, which incorporates a hollow tapered waveguide, converts the spot-size of optical modes from micro- to nano-scales by reducing the lateral dimension from 15 µm to 300 nm at a length equals to 60 µm. The incorporation of such a coupler in photonic integrated circuit causes a physical footprint as small as 81 µm × 15 µm with coupling efficiency and 3-dB coupling bandwidth as high as 72% and 69 nm respectively.

Chip-scale optical vortex lattice generator on a silicon platform

An optical vortex (OV) with an isolated field singularity has been extensively studied in a variety of fields. An OV lattice with a network of optical vortices may find more advanced applications in widespread areas such as optical metrology, optical manipulation, and quantum processing. An OV lattice generated by traditional approaches relies on a number of bulky diffractive optical elements with large volumes and long working distances. Here we present a simple and compact on-chip OV lattice emitter on silicon photonics platforms. The principle relies on three-plane-wave interference. We design, fabricate, and demonstrate an on-chip OV lattice emitter consisting of three parallel waveguides with etched tilt gratings. The tilt gratings facilitate flexible light emission in a wide range of directions, enabling the generation of an OV lattice above the silicon chip. The demonstrated on-chip OV lattice emitter may open a door to generate, manipulate, and detect an OV lattice using photonic integrated circuits.

High-efficiency grating-couplers: demonstration of a new design strategy

We present a simple and practical strategy that allows to design high-efficiency grating couplers. The technique is based on the simultaneous apodization of two structural parameters: the grating period and the fill-factor, along with the optimization of the grating coupler etching depth. Considering a 260 nm Si-thick Silicon-on-insulator platform, we numerically demonstrated a coupling efficiency of −0.8 dB (83%), well matching the experimental value of −0.9 dB (81%). Thanks to the optimized design, these results represent the best performance ever reported in the literature for SOI structures without the use of any back-reflector.

Efficient electro-optic modulation in low-loss graphene-plasmonic slot waveguides

Surface plasmon polaritons enable light concentration within subwavelength regions, opening thereby new avenues for miniaturizing the device and strengthening light-matter interactions. Here we realize efficient electro-optic modulation in low-loss plasmonic waveguides with the aid of graphene, and the devices are fully integrated in the silicon-on-insulator platform. By advantageously exploiting low-loss plasmonic slot-waveguide modes, which weakly leak into a substrate while featuring strong fields within the two-layer-graphene covered slots in metals, we successfully achieve a tunability of 0.13 dB μm^-1 for our fabricated graphene-plasmonic waveguide devices with extremely low insertion loss, which outperforms previously reported graphene-plasmonic devices. Our results highlight the potential of graphene plasmonic leaky-mode hybrid waveguides to realize active ultra-compact devices for optoelectronic applications.

Space division multiplexing chip-to-chip quantum key distribution

Quantum cryptography is set to become a key technology for future secure communications. However, to get maximum benefit in communication networks, transmission links will need to be shared among several quantum keys for several independent users. Such links will enable switching in quantum network nodes of the quantum keys to their respective destinations. In this paper we present an experimental demonstration of a photonic integrated silicon chip quantum key distribution protocols based on space division multiplexing (SDM), through multicore fiber technology. Parallel and independent quantum keys are obtained, which are useful in crypto-systems and future quantum network.

Full-vectorial propagation model and modified effective mode area of four-wave mixing in straight waveguides

We derive from Maxwell's equations full-vectorial nonlinear propagation equations of four-wave mixing valid in straight semiconductor-on-insulator waveguides. Special attention is given to the resulting effective mode area, which takes a convenient form known from studies in photonic crystal fibers, but has not been introduced in the context of integrated waveguides. We show that the difference between our full-vectorial effective mode area and the scalar equivalent often referred to in the literature may lead to mistakes when evaluating the nonlinear refractive index and optimizing designs of new waveguides. We verify the results of our derivation by comparing it to experimental measurements in a silicon-on-insulator waveguide, taking tolerances on fabrication parameters into account.

Efficient spot size converter for higher-order mode fiber-chip coupling

We propose and demonstrate a silicon-based spot size converter (SSC), composed of two identical tapered channel waveguides and a Y-junction. The SSC is designed for first-order mode fiber-to-chip coupling on the basis of mode petal separation and the recombination method. Compared with a traditional on-chip SSC, this method is superior with reduced coupling loss when dealing with a higher-order mode. To the best of our knowledge, we present the first experimental observations of a higher-order SSC which is fully compatible with a standard fabrication process. Average coupling losses of 3 and 5.5 dB are predicted by simulation and demonstrated experimentally. A fully covered 3 dB bandwidth over a 1515-1585 nm wavelength range is experimentally observed.

Inverse-designed ultra-compact star-crossings based on PhC-like subwavelength structures for optical intercross connect

With the development of highly densified photonic integrated circuits, the optical cross nodes number exhibits dramatically increasing. Not only efficient but also ultra-compact waveguide crossings are required to materialize the full potential of silicon photonics for on-chip optical intercross connect. In this work, we proposed several inverse-designed 4 × 4, 5 × 5 and 6 × 6 star-crossings based on the photonic-crystal-like (PhC-like) subwavelength structures, which have ultra-high port density of about 7.1 μm²/port, 5.83 μm²/port and 7.3 μm²/port respectively. Moreover, the star-crossings are practically fabricated and experimentally characterized. The average measured insertion losses (ILs) are less than 0.75, 0.9 dB and 1.5 dB, while the crosstalks are sub-22.5 dB, -20 dB and -18 dB for other output ports over 60 nm bandwidth centered at 1550 nm wavelength.

Silicon photonic bandpass filter based on apodized subwavelength grating with high suppression ratio and short coupling length

A compact silicon bandpass filter with high sidelobe suppression is proposed and experimentally demonstrated using an apodized subwavelength grating (SWG) coupler. The device is implemented by placing a SWG waveguide next to a strip waveguide, and apodization is employed with a Gaussian profile to taper the gap between the two waveguides. A high sidelobe suppression ratio of 27 dB can be obtained with a 3-dB bandwidth of 8.8 nm and an insertion loss of 2.5 dB. Owing to the large optical phase mismatch between the two waveguides and the presence of the SWG waveguide, the coupling length of the device is reduced to 100.3 μm. The experimental results validate our proposed apodized-SWG-based contradirectional coupler (contra-DC) as a promising device in suppressing out-of-band components in coarse wavelength division multiplexed (CWDM) optical communication systems.

Bandwidth-adaptable silicon photonic differentiator employing a slow light effect

A photonic differentiator (DIFF) plays a crucial role in photonic circuits. Despite the fact that a DIFF having a terahertz bandwidth has been reported, the practical bandwidth is limited to being a bandpass response. In this Letter, we propose the concept of a bandwidth-adaptable DIFF, which exploits the slow light effect in a photonic crystal waveguide (PhCW) to overcome the inherent bandwidth limitation of current photonic DIFFs. We fabricated a PhCW Mach-Zehnder interferometer (PhCW-MZI) on the silicon-on-isolator material platform to validate our concept. Input Gaussian pulses with full width to half-maximums (FWHMs) ranging from 2.7 to 81.4 ps are accurately differentiated using our PhCW-MZI. Our all-passive scheme circumvents the bandwidth bottlenecks of previously reported photonic DIFFs and can greatly broaden the application area of photonic DIFFs.

High-directional vortex beam emitter based on Archimedean spiral adiabatic waveguides

Integrated devices that emit light beams with orbital angular momentum (OAM) are becoming key components for wide-ranging applications. Here we propose and demonstrate a highly directional silicon photonic vortex beam emitter based on a 3-turn Archimedean spiral adiabatic waveguide integrated with an angular grating. Such a compact emitter is capable of generating vortex beams with small divergence angles and high directivity. Various orders of OAM modes can be selectively generated by the emitter at different wavelengths with a side-mode suppression ratio as large as 13.6 dB.

Mode-selective wavelength conversion of OFDM-QPSK signals in a multimode silicon waveguide

We experimentally demonstrate on-chip mode-selective wavelength conversions based on the degenerate four-wave mixing (FWM) nonlinear effect in a few-mode silicon waveguide. A multimode waveguide with tapered directional coupler based mode (de)multiplexers is designed and fabricated. Using signals with advanced modulation formats all-optical wavelength conversions of 102.6-Gb/s OFDM-QPSK signals are verified. Experimental results show that only small optical signal-to-noise ratio (OSNR) penalties are observed after wavelength conversion of both modes, which are less than 2 dB for OFDM-QPSK at 7% forward error correction (FEC) threshold.

Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW⁻¹ and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater.

Slow light can be used to sustain strong light–matter interaction in silicon photonics. Here, the authors combine graphene with a silicon slow-light photonic crystal waveguide, demonstrating a fast and energy-efficient graphene microheater.

Photonic arbitrary waveform generator based on Taylor synthesis method

Arbitrary waveform generation has been widely used in optical communication, radar system and many other applications. We propose and experimentally demonstrate a silicon-on-insulator (SOI) on chip optical arbitrary waveform generator, which is based on Taylor synthesis method. In our scheme, a Gaussian pulse is launched to some cascaded microrings to obtain first-, second- and third-order differentiations. By controlling amplitude and phase of the initial pulse and successive differentiations, we can realize an arbitrary waveform generator according to Taylor expansion. We obtain several typical waveforms such as square waveform, triangular waveform, flat-top waveform, sawtooth waveform, Gaussian waveform and so on. Unlike other schemes based on Fourier synthesis or frequency-to-time mapping, our scheme is based on Taylor synthesis method. Our scheme does not require any spectral disperser or large dispersion, which are difficult to fabricate on chip. Our scheme is compact and capable for integration with electronics.

Two-dimensional grating coupler with a low polarization dependent loss of 0.25 dB covering the C-band

We design and demonstrate a two-dimensional grating coupler (2D GC) with a low polarization dependent loss (PDL) based on the silicon-on-insulator (SOI) platform. Using a grating cell consisting of five cylinders and carefully optimizing the distances between the cylinders, a maximum PDL of 0.25 dB covering the C-band is realized, which is 1.25 dB better than a conventional 2D GC with a single cylinder etching pattern fabricated on the same SOI wafer.

Silicon band-rejection and band-pass filter based on asymmetric Bragg sidewall gratings in a multimode waveguide

A silicon photonic wire filter based on an asymmetric sidewall Bragg grating in a multimode silicon-on-insulator strip waveguide is demonstrated. The operating principle is based on the contra-directional coupling between the transverse electric fundamental (TE0) and first-order (TE1) modes, which is enabled by the asymmetric spatially periodic refractive-index perturbations. An asymmetric Y-junction is cascaded at the input port of the filter so as to drop the Bragg reflection. Compared with conventional Bragg grating-based filters, this device eliminates the back reflection at the input port and the 6 dB inherent insertion loss at the drop port; moreover, a narrow 3 dB bandwidth can be obtained with a large critical dimension as a result of the weak coupling strength between the TE0 and TE1 modes inside the multimode waveguide. Experimental results show that a bandwidth of ∼2.8  nm is achieved by a large corrugation width of 150 nm. The insertion loss at the drop port is -2.1  dB, and the extinction ratio is -33  dB at the through port.

Large-aperture subwavelength grating couplers

Subwavelength nanostructure grating couplers fabricated on silicon-on-insulator substrates are used to simplify the fabrication process while maintaining high coupling efficiency. The main obstacle for their application in photonic integrated circuits is the small aperture size of the nanostructure when TE polarization is involved, since they are difficult to achieve with 193 nm deep-ultraviolet lithography and cause problems in inductively coupled plasma etching. A larger lateral period has been used to increase the aperture size. Here, we propose that decreasing the effective index of the nanostructure can also enlarge the aperture size. We analyze the two methods in detail with a rectangle-hole nanostructure and 220 nm thick waveguide layer, aiming at TE polarization centered at 1560 nm. We find performance degenerations for large lateral periods, and this can be simply compensated by adjusting the width of the rectangle hole. The minimum linewidth of the nanostructure can reach 240 nm, while the coupling efficiency is just slightly decreased. The backreflections of a large-aperture grating increase but stay in the same order with ordinary ones, and we also show that this can be overcome by apodizing the grating structure. Finally, we experimentally demonstrate the designed large-aperture grating couplers and the coupling efficiencies are higher than 35%, and reach a rectangle-hole width.

Single step etched two dimensional grating coupler based on the SOI platform

We design and demonstrate a single step etched two dimensional grating coupler (2D GC) based on the silicon-on-insulator (SOI) platform using subwavelength cylinders. Taking the lag effect into consideration, the 2D GC is manufactured in the same lithography and etching processes with the strip waveguide. The measured coupling loss of the proposed 2D GC is -6.0 dB, which is comparable with conventional shallowly etched 2D GC, realizing a fabrication simplification without performance degradation.

Terahertz-bandwidth photonic temporal differentiator based on a silicon-on-isolator directional coupler

We experimentally demonstrate a terahertz-bandwidth photonic differentiator employing a silicon-on-insulator directional coupler. The integrated waveguide coupler with two identical paralleled strip waveguides achieves a first-order differentiator when full energy coupling is met from one waveguide to another. The integrated waveguide coupler can offer different operation bandwidths by changing the length and gap of the strip waveguides. Due to the large 3 dB bandwidth of the directional coupler, we implement the first differentiator with an operation bandwidth of 1.25 THz. The performance of this photonic differentiator is tested using Gaussian-like pulses with a pulsewidth of 2.8 ps, 4 ps, 6 ps, 8 ps, and 10 ps, respectively. The differentiation processing errors and relative energy efficiency are also discussed. This silicon chip may have potential applications in integrated photonic computing circuits with sub-picosecond pulses.

Low crosstalk Bragg grating/Mach-Zehnder interferometer optical add-drop multiplexer in silicon photonics

We characterize the interferometric crosstalk and system performance of two optical add-drop multiplexer (OADM) designs based on Bragg grating/Mach-Zehnder interferometers implemented in silicon-on-insulator. Both OADM designs exhibit low crosstalk and negligible crosstalk-induced power penalties over their 3 dB bandwidths. The devices are tolerant to wavelength drift and misalignment between the transmitter and OADM; moreover, their designs can be optimized further to enable high performance operation in WDM systems.

High-performance silicon-on-insulator grating coupler with completely vertical emission

We study the physical concept of utilizing a critical coupling to obtain a high-performance grating coupler with completely vertical emission on a silicon-on-insulator substrate. Following our design strategy, we numerically show that when our grating coupler is coupled to a standard single-mode fiber operating at 1310 nm wavelength, a -1.46 dB coupling loss, a 20 nm spectral full-width-half-maximum, and a -24 dB back reflection can be achieved at the same time without full optimization. A practical design that largely relaxes the stringent lithography requirement is also proposed and presented.

Broadband polarization independent nanophotonic coupler for silicon waveguides with ultra-high efficiency

Coupling of light to and from integrated optical circuits has been recognized as a major practical challenge since the early years of photonics. The coupling is particularly difficult for high index contrast waveguides such as silicon-on-insulator, since the cross-sectional area of silicon wire waveguides is more than two orders of magnitude smaller than that of a standard single-mode fiber. Here, we experimentally demonstrate unprecedented control over the light coupling between the optical fiber and silicon chip by constructing the nanophotonic coupler with ultra-high coupling efficiency simultaneously for both transverse electric and transverse magnetic polarizations. We specifically demonstrate a subwavelength refractive index engineered nanostructure to mitigate loss and wavelength resonances by suppressing diffraction effects, enabling a coupling efficiency over 92% (0.32 dB) and polarization independent operation for a broad spectral range exceeding 100 nm.

Ultra-compact broadband higher order-mode pass filter fabricated in a silicon waveguide for multimode photonics

An ultra-compact and broadband higher order-mode pass filter in a 1D photonic crystal silicon waveguide is proposed and experimentally demonstrated. The photonic crystal is designed for the lower order mode to work in the photonic band gap, while the higher order mode is located in the air band. Consequently, light on the lower order mode is prohibited to pass through the filter, while light on a higher order mode can be converted to a Bloch mode in the photonic crystal and pass through the filter with low insertion loss. As an example, we fabricate a ∼15-μm-long first-order-mode pass filter that filters out the fundamental mode and provides a measured insertion loss of ∼1.8  dB for the first-order-mode pass signals. The extinction ratio is measured to be around 50 dB (with a variation of ±10  dB due to the detection limitation of the measurement setup) in the measured wavelength range from 1480 to 1580 nm. Additionally, calculations predict the extinction ratio to be larger than 50 dB in a 170 nm broad bandwidth.

Effective Electro-Optical Modulation with High Extinction Ratio by a Graphene-Silicon Microring Resonator

Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultralarge absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of the Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.

Optimising apodized grating couplers in a pure SOI platform to -0.5 dB coupling efficiency

We present a theoretical optimisation of 1D apodized grating couplers in a "pure" Silicon-On-Insulator (SOI) architecture, i.e. without any bottom reflector element, by means of a general mutative method. We perform a comprehensive 2D Finite Difference Time Domain study of chirped and apodized grating couplers in 220 nm SOI, and demonstrate that the global maximum coupling efficiency in that platform is capped to 65% (-1.9 dB). Moving to designs with thicker Si-layers, we identify a new record design in 340 nm SOI, with a simulated coupling efficiency of 89% (-0.5 dB). Going to thicker Si layers does not further improve the efficiency, implying that -0.5 dB may be a global maximum for a grating coupler in SOI without a bottom-reflector. Even after allowing for 193 nm UV-lithographic fabrication constraints, the 340 nm design still offers -0.7 dB efficiency. These new apodized designs are the first pure SOI couplers compatible with deep-UV lithography to offer better than -1 dB insertion losses. With only very minor changes to existing deposition and lithography recipes, they are compatible with the multi-project wafer runs already offered by Si-Photonics foundries.

Arbitrary waveform generator and differentiator employing an integrated optical pulse shaper

We propose and demonstrate an optical arbitrary waveform generator and high-order photonic differentiator based on a four-tap finite impulse response (FIR) silicon-on-insulator (SOI) on-chip circuit. Based on amplitude and phase modulation of each tap controlled by thermal heaters, we obtain several typical waveforms such as triangular waveform, sawtooth waveform, square waveform and Gaussian waveform, etc., assisted by an optical frequency comb injection. Unlike other proposed schemes, our scheme does not require a spectral disperser which is difficult to fabricate on chip with high resolution. In addition, we demonstrate first-, second- and third-order differentiators based on the optical pulse shaper. Our scheme can switch the differentiator patterns from first- to third-order freely. In addition, our scheme has distinct advantages of compactness, capability for integration with electronics.

Demonstration of terabit-scale data transmission in silicon vertical slot waveguides

We design and fabricate silicon vertical slot waveguides for terabit-scale data transmission. The designed silicon photonic device is composed of apodized grating couplers, strip waveguides, strip-to-slot/slot-to-strip mode converters, and slot waveguide. Tight light confinement in the nano-scale air slot region is achieved in the silicon vertical slot waveguide which features relatively lower nonlinearity compared to silicon strip waveguide. Using the fabricated silicon photonic devices, we first demonstrate ultra-wide bandwidth 1.8-Tbit/s data transmission through a 2-mm-long silicon vertical slot waveguide using 161 wavelength-division multiplexing (WDM) channels each carrying 11.2-Gbit/s orthogonal frequency-division multiplexing (OFDM) 16-ary quadrature amplitude modulation (16-QAM) signal. All 161 WDM channels achieve bit-error rate (BER) less than 1e-3 after on-chip data transmission. We further demonstrate terabit-scale data transmission through four silicon vertical slot waveguides with different lengths (1 mm, 2 mm, 3.1 mm, 12.2 mm). The optical signal-to-noise ratio (OSNR) penalties of data transmission through four silicon vertical slot waveguides are 1, 2, 3.2 and 4.5 dB at a BER of 1e-3, respectively. The obtained results indicate that the presented silicon vertical slot waveguide might be an alternative promising candidate facilitating chip-scale high-speed optical interconnections.

Recent advances in silicon-based passive and active optical interconnects

Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.

On-chip grating coupler array on the SOI platform for fan-in/fan-out of MCFs with low insertion loss and crosstalk

We report the design and fabrication of a compact multi-core fiber fan-in/fan-out using a grating coupler array on the SOI platform. The grating couplers are fully-etched, enabling the whole circuit to be fabricated in a single lithography and etching step. Thanks to the apodized design for the grating couplers and the introduction of an aluminum reflective mirror, a highest coupling efficiency of -3.8 dB with 3 dB coupling bandwidth of 48 nm and 1.5 dB bandwidth covering the whole C band, together with crosstalk lower than -32 dB are demonstrated.

Integrated programmable photonic filter on the silicon-on-insulator platform

We propose and demonstrate a silicon-on-insulator (SOI) on-chip programmable filter based on a four-tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heaters. We further demonstrate the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability for integrating with electronics.

Short and efficient mode-size converter designed by segmented-stepwise method

We present an efficient segmented-stepwise method to design a short and low-loss mode-size converter. A silicon-on-insulator platform-based converter with 20 μm length and 95.2% conversion efficiency is acquired by taking only 10 optimization generations using 2D-FDTD method. A 3D-FDTD simulation is performed to verify the calculated results, returning an efficiency of 92.1%. The proposed device can be used to connect a 12-μm-wide waveguide and a 0.5-μm-wide single-mode waveguide, with comparable performance of a regular scheme using 150-μm-long linear taper. For demonstration, the converter was fabricated by electron-beam-lithography and inductively-coupled-plasma etching. A conversion loss of -0.62±0.02  dB at 1550 nm was experimentally measured.

Fully etched apodized grating coupler on the SOI platform with -0.58 dB coupling efficiency

We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon-on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity and coupling angle dependence are experimentally investigated. A record ultrahigh CE of -0.58 dB with a 3 dB bandwidth of 71 nm and low back reflection are demonstrated.

Polarization-insensitive wavelength conversion of 40 Gb/s NRZ-DPSK signals in a silicon polarization diversity circuit

Polarization insensitive wavelength conversion of a 40 Gb/s non-return-to-zero (NRZ) differential phase-shift keying (DPSK) data signal is demonstrated using four-wave mixing (FWM) in a silicon nanowire circuit. Polarization independence is achieved using a diversity circuit based on polarization rotators and splitters, which is fabricated by a simple process on the silicon-on-insulator (SOI) platform. Error-free performance is achieved with only 0.5 dB of power penalty compared to the wavelength conversion of a signal with well optimized input polarization. Additionally, data transmission over 161 km standard single-mode fiber (SSMF) is demonstrated at 40 Gb/s using optical phase conjugation (OPC) in the proposed circuit.