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Zhang G, Chen Y, Zheng Z, Shao R, Zhou J, Zhou Z, Jiao L, Zhang J, Wang H, Kong Q, Sun C, Ni K, Wu J, Chen J, Gong X. Thin film ferroelectric photonic-electronic memory. LIGHT, SCIENCE & APPLICATIONS 2024; 13:206. [PMID: 39179550 PMCID: PMC11344043 DOI: 10.1038/s41377-024-01555-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2024] [Revised: 07/16/2024] [Accepted: 07/25/2024] [Indexed: 08/26/2024]
Abstract
To reduce system complexity and bridge the interface between electronic and photonic circuits, there is a high demand for a non-volatile memory that can be accessed both electrically and optically. However, practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration. Here, we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator. We successfully demonstrate programming and erasing the memory using both electrical and optical methods, assisted by optical-to-electrical-to-optical conversion. The memory cell exhibits a high optical extinction ratio of 6.6 dB at a low working voltage of 5 V and an endurance of 4 × 104 cycles. Furthermore, the multi-level storage capability is analyzed in detail, revealing stable performance with a raw bit-error-rate smaller than 5.9 × 10-2. This ground-breaking work could be a key technology enabler for future hybrid electronic-photonic systems, targeting a wide range of applications such as photonic interconnect, high-speed data communication, and neuromorphic computing.
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Affiliation(s)
- Gong Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Yue Chen
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Zijie Zheng
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Rui Shao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Jiuren Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Zuopu Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Leming Jiao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Jishen Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Haibo Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Qiwen Kong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Chen Sun
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Kai Ni
- Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, 14623, USA
| | - Jixuan Wu
- School of Information Science and Engineering, Shandong University, Jinan, 250100, China
| | - Jiezhi Chen
- School of Information Science and Engineering, Shandong University, Jinan, 250100, China
| | - Xiao Gong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore.
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Shahbaz M, Butt MA, Piramidowicz R. Breakthrough in Silicon Photonics Technology in Telecommunications, Biosensing, and Gas Sensing. MICROMACHINES 2023; 14:1637. [PMID: 37630173 PMCID: PMC10456798 DOI: 10.3390/mi14081637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 08/17/2023] [Accepted: 08/18/2023] [Indexed: 08/27/2023]
Abstract
Silicon photonics has been an area of active research and development. Researchers have been working on enhancing the integration density and intricacy of silicon photonic circuits. This involves the development of advanced fabrication techniques and novel designs to enable more functionalities on a single chip, leading to higher performance and more efficient systems. In this review, we aim to provide a brief overview of the recent advancements in silicon photonic devices employed for telecommunication and sensing (biosensing and gas sensing) applications.
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Affiliation(s)
| | - Muhammad A. Butt
- Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
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3
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Wu W, Ma H, Cai X, Han B, Li Y, Xu K, Lin H, Zhang F, Chen Z, Zhang Z, Peng LM, Wang S. High-Speed Carbon Nanotube Photodetectors for 2 μm Communications. ACS NANO 2023. [PMID: 37470321 DOI: 10.1021/acsnano.3c04619] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
In the era of big data, the growing demand for data transmission capacity requires the communication band to expand from the traditional optical communication windows (∼1.3-1.6 μm) to the 2 μm band (1.8-2.1 μm). However, the largest bandwidth (∼30 GHz) of the current high-speed photodetectors for the 2 μm window is considerably less than the developed 1.55 μm band photodetectors based on III-V materials or germanium (>100 GHz). Here, we demonstrate a high-performance carbon nanotube (CNT) photodetector that can operate in both the 2 and 1.55 μm wavelength bands based on high-density CNT arrays on a quartz substrate. The CNT photodetector exhibits a high responsivity of 0.62 A/W and a large 3 dB bandwidth of 40 GHz (setup-limited) at 2 μm. The bandwidth is larger than that of existing photodetectors working in this wavelength range. Moreover, the CNT photodetector operating at 1.55 μm exhibits a setup-limited 3 dB bandwidth over 67 GHz at zero bias. Our work indicates that CNT photodetectors with high performance and low cost have great potential for future high-speed optical communication at both the 2 and 1.55 μm bands.
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Affiliation(s)
- Weifeng Wu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310007, China
| | - Xiang Cai
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Electronics, Peking University, Beijing 100871, China
| | - Bing Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Yan Li
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Ke Xu
- Department of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen 518055, China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310007, China
| | - Fan Zhang
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Electronics, Peking University, Beijing 100871, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Zhangyuan Chen
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Electronics, Peking University, Beijing 100871, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Sheng Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Electronics, Peking University, Beijing 100871, China
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4
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Li X, Liu Y, Song R, Li C, Wang S, Yue W, Tu Z, Chen X, Cai Y, Wang W, Yu M. PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band. OPTICS EXPRESS 2023; 31:3325-3335. [PMID: 36785328 DOI: 10.1364/oe.477776] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Accepted: 12/27/2022] [Indexed: 06/18/2023]
Abstract
We report the demonstration of a germanium waveguide p-i-n photodetector (PD) for the C + L band light detection. Tensile strain is transferred into the germanium layer using a SiN stressor on top surface of the germanium. The simulation and experimental results show that the trenches must be formed around the device, so that the strain can be transferred effectively. The device exhibits an almost flat responsivity with respect to the wavelength range from 1510 nm to 1630 nm, and high responsivity of over 1.1 A/W is achieved at 1625 nm. The frequency response measurement reveals that a high 3 dB bandwidth (f3dB) of over 50 GHz can be obtained. The realization of the photonic-integrated circuits (PIC)-integrable waveguide Ge PDs paves the way for future telecom applications in the C + L band.
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Ghosh S, Bansal R, Sun G, Soref RA, Cheng HH, Chang GE. Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics. SENSORS (BASEL, SWITZERLAND) 2022; 22:3978. [PMID: 35684598 PMCID: PMC9183011 DOI: 10.3390/s22113978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Revised: 05/17/2022] [Accepted: 05/20/2022] [Indexed: 11/24/2022]
Abstract
Silicon photonics is emerging as a competitive platform for electronic-photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. In this paper, we present a comprehensive theoretical study of GeSn vertical p-i-n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier collection path, thereby allowing for the simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2 µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2 µm wavelength band. The results indicate that the performance of the GeSn WGPD has a strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with a 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12 × 1010 cmHz½W-1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.
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Affiliation(s)
- Soumava Ghosh
- Institute of Radio Physics and Electronics, University of Calcutta, Kolkata 700009, India;
| | - Radhika Bansal
- Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High–Tech Innovations (AIM–HI), National Chung Cheng University, Chiayi County 62102, Taiwan;
| | - Greg Sun
- Department of Engineering, University of Massachusetts-Boston, Boston, MA 02125, USA; (G.S.); (R.A.S.)
| | - Richard A. Soref
- Department of Engineering, University of Massachusetts-Boston, Boston, MA 02125, USA; (G.S.); (R.A.S.)
| | - Hung-Hsiang Cheng
- Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
| | - Guo-En Chang
- Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High–Tech Innovations (AIM–HI), National Chung Cheng University, Chiayi County 62102, Taiwan;
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Kumar H, Pandey AK. GeSn-based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications. IEEE Trans Nanobioscience 2021; 21:175-183. [PMID: 34928801 DOI: 10.1109/tnb.2021.3136571] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Abstract
Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next-generation ultra-compact spectroscopic systems for various applications such as label-free and damage-free gas sensing, medical diagnosis, and defense. The epitaxial growth of Ge1-xSnx alloy on Si substrate provides the promising technique to extend the cut-off wavelength of Si photonics to MIR range by Sn alloying. Here, we present the theory and simulation of heterojunction p-i-n MIR photodetectors (PDs) with Ge0.87Sn0.13/Ge0.92Sn0.08 quantum-wells with an additional Ge0.91Sn0.09 layer to elongate the photoabsorption path in the MIR spectrum. The incorporation of QW pairs (N) enables the light-matter interaction due to the carrier and optical confinement in the active region. As a result, the spectral response of the device is enhanced in the MIR range. Devices with varying N were compared in terms of various figure-of merits including dark-current, a photocurrent-to-dark current ratio, detectivity, spectral responsivity, and noise equivalent power (NEP). Additionally, parasitic capacitance-dependent RC and 3dB bandwidth were also studied using a small-signal equivalent circuit model. The proposed device exhibited the extended photodetection wavelength at ~3370 nm and Iph/Idark up to ~7.3 × 103 with a dark current of ~56.3 nA for N = 8 at 300 K. At a bias of -3V, the proposed device achieved the spectral responsivity of 0.86 A/W at 2870 nm and 0.55 A/W at 3300 nm, detectivity more than 2.5 × 109 Jones and a NEP less than 2.1 × 10-13 WHz-0.5 for N = 8 at 3250 3250 nm The calculated 3dB bandwidth of 47.8 GHz, the signal-to-noise ratio (SNR), and linear dynamic range (LDR) of 93 dB and 74 dB were achieved at 3300 nm for N = 8. Thus, these results indicate that the proposed GeSn-based QW p-i-n PDs pave the pathway towards the realization of new and high-performance detectors for sensing in the MIR regime.
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