Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics

Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure

Interface interactions in 2D vertically stacked heterostructures play an important role in optoelectronic applications, and photodetectors based on graphene/InSe heterostructures show promising performance nowadays. However, nonlinear optical property studies based on the graphene/InSe heterostructure are insufficient. Here, we fabricated a graphene/InSe heterostructure by mechanical exfoliation and investigated the optically induced charge transfer between graphene/InSe heterostructures by taking photoluminescence and pump-probe measurements. The large built-in electric field at the interface was confirmed by Kelvin probe force microscopy. Furthermore, due to the efficient interfacial carrier transfer driven by the built-in electric potential (~286 meV) and broadband nonlinear absorption, the application of the graphene/InSe heterostructure in a mode-locked laser was realized. Our work not only provides a deeper understanding of the dipole orientation-related interface interactions on the photoexcited charge transfer of graphene/InSe heterostructures, but also enriches the saturable absorber family for ultrafast photonics application.

Layer-dependent excitonic valley polarization properties in MoS2-WS2 heterostructures

In this work, we investigate the polarization of the excitonics valley in MoS₂-WS₂ heterostructures using circular polarization-resolved photoluminescence. The valley polarization is the largest (≈28.45%) in the 1L-1L MoS₂-WS₂ heterostructure and the polarizability of A_WS2 decreases as the number of WS₂ layers increases. We further observed a redshift of exciton XMoS₂- in MoS₂-WS₂ heterostructures with the increase of WS₂ layers, which is attributed to the displacement of the MoS₂ band edge, indicating the layer-sensitive optical properties of the MoS₂-WS₂ heterostructure. Our findings shed light on the understanding of exciton behavior in multilayer MoS₂-WS₂ heterostructures that may promote their potential applications in optoelectronic devices.

Third-order harmonic mode-locked and Q-switched Er-doped fiber laser based on a Cr2Ge2Te6 saturable absorber

This paper reports the generation of fundamental solitons and third-order solitons in an erbium-doped fiber laser (EDFL) by a Cr₂Ge₂Te₆-polyvinyl alcohol (CGT-PVA) saturable absorber (SA). Stable fundamental solitons at 1559.09 nm at a repetition frequency of 5.1 MHz were detected, and third-order solitons with a maximum output power of 6.807 mW and narrowest monopulse duration of 615.2 fs were obtained under a repetition frequency of 15.3 MHz by changing pump power. To the best of our knowledge, it is the first time to achieve a Q-switched pulse with a minimum pulse duration of 2.2 µs and maximum single pulse energy of 12.11 nJ in EDFL based on CGT-PVA SA after reducing the cavity length. Its repetition rate monotonically increased from 18.8 kHz to 61.8 kHz with a tuning range of about 43 kHz. The experimental results sufficiently demonstrate that CGT has enormous potential as an ultrafast photonics device.

Femtosecond fiber oscillator based on a 3×3-coupler-NALM: numerical model and realizations at 1 and 2 µm

In this article, we present robust passively mode-locked femtosecond lasers operating at 1030 and approximately 2000 nm, respectively. The all-fiber, all-polarization-maintaining (PM) lasers are mode-locked by a nonlinear amplifying loop mirror (NALM) which is attached to the cavity by a 3×3-coupler. The NALM is phase-biased by the coupler, enabling turn-key operation of the oscillator. Femtosecond pulse generation is demonstrated using Ytterbium and Thulium doped active fibers. Depending on the wavelength and the installed dispersive elements, pulse formation can be aided by a range of attractors including self-similar pulse evolution, soliton, or dispersion-managed soliton formation.

Novel nanomaterials based saturable absorbers for passive mode locked fiber laser at 1.5μm

Compared with continuous wave lasers, ultrafast lasers have the advantages of ultra-short pulse width and ultra-high peak power, and have significant applications in optical communications, medical diagnostics, and precision machining. Saturable absorber (SA) technology is the most effective technique for the generation of ultra-fast lasers, which are based on artificial SAs and natural SAs. Among them, the semiconductor saturable absorber mirror has become the most commonly used form at present. Recently, basic research and application of nanomaterials such as carbon nanotubes (CNTs) and graphene have been developed rapidly. Researchers have found that nanomaterials exhibit extraordinary characteristics in ultrafast photonics, such as the low saturation intensity of CNTs, zero-band gap of graphene, and extremely high modulation depth of the topological insulator nano-films. Since graphene was first reported as an SA in 2009, many other nanomaterials have been successively explored, resulting in the rapid development of novel nanomaterial-based SAs. In this paper, we classified the nanomaterials used in SA mode-locking technology at 1.5μm and reviewed their research progress with a particular focus on nonlinear optical properties, integration strategies, and applications in the field of ultrafast photonics.

2 μm passively mode-locked thulium-doped fiber lasers with Ta2AlC-deposited tapered and side-polished fibers

In this work, mode-locked thulium-doped fiber lasers operating in the 2 µm wavelength region were demonstrated using tantalum aluminum carbide (Ta2AlC)-based saturable absorbers (SAs) utilizing the evanescent wave interaction. The Ta2AlC MAX Phase was prepared by dissolving the Ta2AlC powder in isopropyl alcohol and then deposited onto three different evanescent field-based devices, which were the tapered fiber, side-polished fiber, and arc-shaped fiber. Flame-brushing and wheel-polishing techniques were used to fabricate the tapered and arc-shaped fibers, respectively, while the side-polished fiber was purchased commercially. All three SA devices generated stable mode-locked pulses at center wavelengths of 1937, 1931, and 1929 nm for the tapered, side-polished, and arc-shaped fibers. The frequency of the mode-locked pulses was 10.73 MHz for the tapered fiber, 9.58 MHz for the side-polished fiber, and 10.16 MHz for the arc-shaped fiber. The measured pulse widths were 1.678, 1.734, and 1.817 ps for each of the three SA devices. The long-term stability of the mode-locked lasers was tested for each configuration over a 2-h duration. The lasers also showed little to no fluctuations in the center wavelengths and the peak optical intensities, demonstrating a reliable, ultrafast laser system.

TiN nanoparticles deposited onto a D-shaped fiber as an optical modulator for ultrafast photonics and temperature sensing

Titanium nitride (TiN) with outstanding physical and chemical properties has earned considerable attention. However, few studies have been conducted on the ability of TiN in the ultrafast photonics field. In this study, ultrafast fiber lasers operating at 1.5 and 2 μm were realized using TiN nanoparticles (NPs) deposited onto a D-shaped fiber (DF) as the optical modulator. TiN NPs were synthesized via a reduction-nitridation route. As the TiN-DF saturable absorber (SA) was integrated into the erbium-doped fiber laser (EDFL) and thulium-doped fiber laser (TDFL) cavities, femtosecond pulses of 1532 nm and 1960 nm were obtained with high performance. To the best of our knowledge, the mode-locked fiber laser operating around 1530 nm was realized for the first time. Interestingly, TiN-DF SA in the TDFL could be used as a temperature sensitive device, and a novel temperature sensor was proposed with the sensitivity of 88 pm °C^-1. Our results verified that TiN-DF modulators are excellent nonlinear optical devices for ultrafast photonic applications.

Black Phosphorus/Polymers: Status and Challenges

As a newly emerged mono-elemental nanomaterial, black phosphorus (BP) has been widely investigated for its fascinating physical properties, including layer-dependent tunable band gap (0.3-1.5 eV), high ON/OFF ratio (10⁴ ), high carrier mobility (10³ cm² V^-1 s^-1 ), excellent mechanical resistance, as well as special in-plane anisotropic optical, thermal, and vibrational characteristics. However, the instability caused by chemical degradation of its surface has posed a severe challenge for its further applications. A focused BP/polymer strategy has more recently been developed and implemented to hurdle this issue, so at present BP/polymers have been developed that exhibit enhanced stability, as well as outstanding optical, thermal, mechanical, and electrical properties. This has promoted researchers to further explore the potential applications of black phosphorous. In this review, the preparation processes and the key properties of BP/polymers are reviewed, followed by a detailed account of their diversified applications, including areas like optoelectronics, bio-medicine, and energy storage. Finally, in accordance with the current progress, the prospective challenges and future directions are highlighted and discussed.

Recent Progress of Two-Dimensional Materials for Ultrafast Photonics

Owing to their extraordinary physical and chemical properties, two-dimensional (2D) materials have aroused extensive attention and have been widely used in photonic and optoelectronic devices, catalytic reactions, and biomedicine. In particular, 2D materials possess a unique bandgap structure and nonlinear optical properties, which can be used as saturable absorbers in ultrafast lasers. Here, we mainly review the top-down and bottom-up methods for preparing 2D materials, such as graphene, topological insulators, transition metal dichalcogenides, black phosphorus, and MXenes. Then, we focus on the ultrafast applications of 2D materials at the typical operating wavelengths of 1, 1.5, 2, and 3 μm. The key parameters and output performance of ultrafast pulsed lasers based on 2D materials are discussed. Furthermore, an outlook regarding the fabrication methods and the development of 2D materials in ultrafast photonics is also presented.

Ultrafast Fiber Lasers with Low-Dimensional Saturable Absorbers: Status and Prospects

Wide-spectral saturable absorption (SA) in low-dimensional (LD) nanomaterials such as zero-, one-, and two-dimensional materials has been proven experimentally with outstanding results, including low saturation intensity, deep modulation depth, and fast carrier recovery time. LD nanomaterials can therefore be used as SAs for mode-locking or Q-switching to generate ultrafast fiber laser pulses with a high repetition rate and short duration in the visible, near-infrared, and mid-infrared wavelength regions. Here, we review the recent development of emerging LD nanomaterials as SAs for ultrafast mode-locked fiber laser applications in different dispersion regimes such as anomalous and normal dispersion regimes of the laser cavity operating in the near-infrared region, especially at ~1550 nm. The preparation methods, nonlinear optical properties of LD SAs, and various integration schemes for incorporating LD SAs into fiber laser systems are introduced. In addition to these, externally (electrically or optically) controlled pulsed fiber laser behavior and other characteristics of various LD SAs are summarized. Finally, the perspectives and challenges facing LD SA-based mode-locked ultrafast fiber lasers are highlighted.

Stacking-Engineered Heterostructures in Transition Metal Dichalcogenides

The layer-by-layer assembly of 2D transition metal dichalcogenide monolayer blocks to form a 3D stack, with a precisely chosen sequence/angle, is the newest development for these materials. In this way, one can create "van der Waals heterostructures (HSs)," opening up a new realm of materials engineering and novel devices with designed functionalities. Herein, a detailed systematic review of transition metal dichalcogenide stacking-engineered heterostructures, from controllable fabrication to typical characterization, and stacking-correlated physical behaviors is presented. Furthermore, recent advances in stacking design, such as stacking sequence, twist angles, and moiré superlattice heterojunctions, are also comprehensively summarized. Finally, the remaining challenges and possible strategies for using stacking engineering to tune the properties of 2D materials are also outlined.

Ultrafast transient sub-bandgap absorption of monolayer MoS2

The light-matter interaction in materials is of remarkable interest for various photonic and optoelectronic applications, which is intrinsically determined by the bandgap of the materials involved. To extend the applications beyond the bandgap limit, it is of great significance to study the light-matter interaction below the material bandgap. Here, we report the ultrafast transient absorption of monolayer molybdenum disulfide in its sub-bandgap region from ~0.86 µm to 1.4 µm. Even though this spectral range is below the bandgap, we observe a significant absorbance enhancement up to ~4.2% in the monolayer molybdenum disulfide (comparable to its absorption within the bandgap region) due to pump-induced absorption by the excited carrier states. The different rise times of the transient absorption at different wavelengths indicate the various contributions of the different carrier states (i.e., real carrier states in the short-wavelength region of ~<1 µm, and exciton states in the long wavelength region of ~>1 µm). Our results elucidate the fundamental understanding regarding the optical properties, excited carrier states, and carrier dynamics in the technologically important near-infrared region, which potentially leads to various photonic and optoelectronic applications (e.g., excited-state-based photodetectors and modulators) of two-dimensional materials and their heterostructures beyond their intrinsic bandgap limitations.

Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS2

Monolayer transition-metal dichalcogenides show strong optical nonlinearity with great potential for various emerging applications. Here we demonstrate the gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS₂. Up to 80% modulation depth in four-wave mixing is achieved when the generated signal is resonant with the A exciton at room temperature, corresponding to an effective third-order optical nonlinearity |χ⁽³⁾_eff| tuning from (∼12.0 to 5.45) × 10^-18 m²/V². The tunability of the effective second-order optical nonlinearity |χ⁽²⁾_eff| at 440 nm C-exciton resonance wavelength is also demonstrated from (∼11.6 to 7.40) × 10^-9 m/V with sum-frequency generation. Such a large tunability in optical nonlinearities arises from the strong excitonic charging effect in monolayer transition-metal dichalcogenides, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.

Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers

Graphene/WS₂ (G/WS₂) van der Waals (vdW) heterostructures are utilized as saturable absorbers (SAs) in compact mode-locked fiber lasers operating in the telecommunication L-band for the first time. The interlayer coupling is confirmed by Raman and photoluminescence spectra. In comparison with pure WS₂, the heterostructure exhibits excellent nonlinear optical properties in terms of larger modulation depth and lower saturation intensity due to the strong interlayer coupling. By incorporating the G/WS₂-based SA into an all-anomalous-dispersion fiber laser, stable conventional-soliton pulses with a pulse duration down to 660 fs can be realized at 1601.9 nm, manifesting better output performance compared to pure WS₂. In addition, through shifting the cavity dispersion to the net-normal dispersion, the G/WS₂ SA can also be applied for dissipative-soliton generation. Resultant output pulses feature the central wavelength of 1593.5 nm and the pulse duration of 55.6 ps. Our results indicate that the G/WS₂ vdW heterostructure is a promising candidate as SA for pulsed laser applications, which pave the way for the development of novel ultrafast photonic devices with desirable performance.

Nonlinear optical absorption properties of zirconium selenide in generating dark soliton and dark-bright soliton pairs

Our work reports the preparation of zirconium selenide (ZrSe₂)-polyvinyl alcohol (PVA) film-type saturable absorber (SA) and its nonlinear absorption performance in obtaining dark soliton and dark-bright soliton pairs in an Er-doped fiber (EDF) laser for the first time, to the best of our knowledge. The saturation intensity and modulation depth of the ZrSe₂-PVA SA were ∼12.72MW/cm² and 2.3%, respectively. Due to the modulation of the SA, under a pump power of 525.2 mW, stable dark soliton operation with an average output power of 9.75 mW, and a pulse repetition frequency of 20.84 MHz, a pulse width of 3.85 ns was attained successfully. By adjusting the state of the polarization controllers, dark-bright soliton pairs were also observed. To the best of our knowledge, this was the first demonstration focusing on the nonlinear optical absorption applications of ZrSe₂ in obtaining dark soliton and dark-bright soliton pairs. Our results show that ZrSe₂ is a good two-dimensional SA material for acting as an ultrafast optical device due to its suitable nonlinear optical absorption properties.

Emerging transparent conducting oxides material: 2-dimensional plasmonic Zn doped CuGaO2 nanoplates for Q-switched fiber laser

A passively Q-switched Er³⁺ doped fiber laser has been realized by using Zn doped hexagonal CuGaO₂ (CGZO) nanoplates (NPs) as a saturable absorber (SA) for the first time. The CGZO NPs SA film exhibits strong saturable absorption property, meanwhile with a small nonsaturable loss of 5.179%, and the modulation depth is up to 40.821%. A stable passively Q-switched laser, which was centered at 1559.75 nm, was achieved, and the threshold was as low as 42 mW. With an increase of the pump power from 42mW to 361mW, the pulse duration decreases from 36 μs to 1.71 μs, and the maximum output power of 12.1 mW is achieved. Particularly, the optical-optical conversion efficiency of the Q-Switched laser based on CGZO NPs reached 3.76%. Due to whispering-gallery-mode (WGM) resonance in CGZO NPs, the nonlinear optical response of CGZO NPs has been enhancement. These findings demonstrate that CGZO NPs are promising SA for fabricating high-efficiency and low-threshold pulse lasers.

Nonlinear optical properties of MoS2-WS2 heterostructure in fiber lasers

As a saturable absorption material, the heterostructure with the van der Waals structure has been paid much attention in material science. In general, the heterogeneous combination is able to neutralize, or even exceed, the individual material's advantages in some aspects. In this paper, which describes the magnetron sputtering deposition method, the tapered fiber is coated by the MoS₂-WS₂ heterostructure, and the MoS₂-WS₂ heterostructure saturable absorber (SA) is fabricated. The modulation depth of the prepared MoS₂-WS₂ heterostructure SA is measured to be 19.12%. Besides, the theoretical calculations for the band gap and carrier mobility of the MoS₂-WS₂ heterostructure are provided. By employing the prepared SA, a stable and passively erbium-doped fiber laser is implemented. The generated pulse duration of 154 fs is certified to be the shortest among all fiber lasers based on transition mental dichalcogenides. Results in this paper provide the new direction for the fabrication of ultrafast photon modulation devices.

High photoresponsivity and broadband photodetection with a band-engineered WSe2/SnSe2 heterostructure

van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe2/SnSe2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W-1 and 4.4 × 1010 Jones and those at 1550 nm are ∼80 A W-1 and 1.4 × 1010 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

Emerging 2D materials beyond graphene for ultrashort pulse generation in fiber lasers

Ultrafast fiber lasers have significant applications in ultra-precision manufacturing, medical diagnostics, medical treatment, precision measurement and astronomical detection, owing to their ultra-short pulse width and ultra-high peak-power. Since graphene was first explored as an optical saturable absorber for passively mode-locked lasers in 2009, many other 2D materials beyond graphene, including phosphorene, antimonene, bismuthene, transition metal dichalcogenides (TMDs), topological insulators (TIs), metal-organic frameworks (MOFs) and MXenes, have been successively explored, resulting in rapid development of novel 2D materials-based saturable absorbers. Herein, we review the latest progress of the emerging 2D materials beyond graphene for passively mode-locked fiber laser application. These 2D materials are classified into mono-elemental, dual-elemental and multi-elemental 2D materials. The atomic structure, band structure, nonlinear optical properties, and preparation methods of 2D materials are summarized. Diverse integration strategies for applying 2D materials into fiber laser systems are introduced, and the mode-locking performance of the 2D materials-based fiber lasers working at 1-3 μm are discussed. Finally, the perspectives and challenges facing 2D materials-based mode-locked fiber lasers are highlighted.

Diode-Pumped Solid-State Q-Switched Laser with Rhenium Diselenide as Saturable Absorber

We report a solid-state passively Q-switched Nd:YVO4 laser adopting rhenium diselenide (ReSe2) as saturable absorber (SA) materials. ReSe2 belongs to a type of transition metal dichalcogenides (TMDs) materials and it has the weak-layered dependent feature beneficial for the preparation of few-layer materials. The few-layer ReSe2 was prepared by ultrasonic exfoliation method. Using a power-dependent transmission experiment, its modulation depth and saturation intensity were measured to be 1.89% and 6.37 MW/cm2. Pumped by diode laser and based on few-layer ReSe2 SA, the Q-switched Nd:YVO4 laser obtained the shortest Q-switched pulse width of 682 ns with the highest repetition rate of 84.16 kHz. The maximum average output power was 125 mW with the slope efficiency of 17.27%. Our experiment, to the best of our knowledge, is the first demonstration that used ReSe2 as SA materials in an all-solid-state laser. The results show that the few-layer ReSe2 owns the nonlinear saturable absorption properties and it has the capacity to act as SA in an all-solid-state laser.

Active synchronization and modulation of fiber lasers with a graphene electro-optic modulator

We report the synchronization of two actively Q-switched fiber lasers operating at 1.5 μm and 2 μm with a shared broadband graphene electro-optic modulator. Two graphene monolayer sheets separated with a high-kHfO₂ dielectric layer are configured to enable broadband light modulation. The graphene electro-optic modulator is shared by two optical fiber laser cavities (i.e., an erbium-doped fiber laser cavity and a thulium/holmium-codoped fiber laser cavity) to actively Q-switch the two lasers, resulting in stable synchronized pulses at 1.5 μm and 2 μm with a repetition rate ranging from 46 kHz to 56 kHz.

Nonlinear Optics with 2D Layered Materials

2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g., electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented.

Wavelength and pulse duration tunable ultrafast fiber laser mode-locked with carbon nanotubes

Ultrafast lasers with tunable parameters in wavelength and time domains are the choice of light source for various applications such as spectroscopy and communication. Here, we report a wavelength and pulse-duration tunable mode-locked Erbium doped fiber laser with single wall carbon nanotube-based saturable absorber. An intra-cavity tunable filter is employed to continuously tune the output wavelength for 34 nm (from 1525 nm to 1559 nm) and pulse duration from 545 fs to 6.1 ps, respectively. Our results provide a novel light source for various applications requiring variable wavelength or pulse duration.

Magnetron-sputtering deposited WTe2for an ultrafast thulium-doped fiber laser

Ultrafast pulse generation was demonstrated in a thulium-doped fiber laser mode-locked by magnetron-sputtering deposited WTe₂ with a modulation depth, a nonsaturable loss, and a saturable intensity of 31%, 34.3%, and 7.6  MW/cm², respectively. Stable soliton pulses could be obtained at a 1915.5 nm central wavelength with a pulse duration of 1.25 ps, an average output power of 39.9 mW, and a signal-to-noise ratio of 95 dB. To the best of our knowledge, this was the first demonstration of WTe₂-based saturable absorbers in fiber lasers at a 2 μm regime.

Large-area highly crystalline WSe2 atomic layers for ultrafast pulsed lasers

Large-area and highly crystalline transition metal dichalcogenides (TMDs) films possess superior saturable absorption compared to the TMDs nanosheet counterparts, which make them more suitable as excellent saturable absorbers (SA) for ultrafast laser technology. Thus far, the nonlinear optical properties of large-scale WSe₂ and its applications in ultrafast photonics have not yet been fully investigated. In this work, the saturable absorption of chemical vapor deposition (CVD) grown WSe₂ films with large-scale and high quality are studied and the use of WSe₂ films as a broadband SA for passively mode-locked fiber lasers at both 1.5 and 2 μm ranges is demonstrated. To enhance the light-material interaction, large-area WSe₂ film is tightly transferred onto the side wall of a microfiber to form a hybrid structure, which realizes strong evanescent wave interaction between light and WSe₂ film. The integrated microfiber-WSe₂ device shows a large modulation depth of 54.5%. Using the large-area WSe₂ as a mode-locker, stable soliton mode-locked pulse generation is achieved and the pulse durations of 477 fs (at 1.5 μm) and 1.18 ps (at 2.0 μm) are demonstrated, which suggests that the large-area and highly crystalline WSe₂ films afford an excellent broadband SA for ultrafast photonic applications.