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Krishna R, Fan T, Hosseinnia AH, Wu X, Peng Z, Adibi A. Hybrid 3C-silicon carbide-lithium niobate integrated photonic platform. OPTICS EXPRESS 2024; 32:14555-14564. [PMID: 38859397 DOI: 10.1364/oe.517840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2024] [Accepted: 03/07/2024] [Indexed: 06/12/2024]
Abstract
In this paper, we demonstrate a novel hybrid 3C-silicon carbide-lithium niobate (3C-SiC-LN) platform for passive and active integrated nanophotonic devices enabled through wafer bonding. These devices are fabricated by etching the SiC layer, with the hybrid optical mode power distributed between SiC and LN layers through a taper design. We present a racetrack resonator-based electro-optic (EO) phase shifter where the resonator is fabricated in SiC while using LN for EO-effect (r33≈ 27 pm/V). The proposed phase shifter demonstrates efficient resonance wavelength tuning with low voltage-length product (Vπ.Lπ ≈ 2.18 V cm) using the EO effect of LN. This hybrid SiC-LN platform would enable high-speed, low-power, and miniaturized photonic devices (e.g., modulators, switches, filters) operable over a broad range of wavelengths (visible to infrared) with applications in both classical and quantum nanophotonics.
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Zhou L, Yi A, Su Y, Yang B, Zhu Y, Cai J, Wang C, Wu Z, Song S, Zhang J, Ou X. High-Q adiabatic micro-resonators on a wafer-scale ion-sliced 4H-silicon carbide-on-insulator platform. OPTICS LETTERS 2023; 48:6279-6282. [PMID: 38039246 DOI: 10.1364/ol.505777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 10/26/2023] [Indexed: 12/03/2023]
Abstract
A 4H-silicon carbide-on-insulator (4H-SiCOI) has emerged as a prominent material contender for integrated photonics owing to its outstanding material properties such as CMOS compatibility, high refractive index, and high second- and third-order nonlinearities. Although various micro-resonators have been realized on the 4H-SiCOI platform, enabling numerous applications including frequency conversion and electro-optical modulators, they may suffer from a challenge associated with spatial mode interactions, primarily due to the widespread use of multimode waveguides. We study the suppression of spatial mode interaction with Euler bends, and demonstrate micro-resonators with improved Q values above 1 × 105 on ion-sliced 4H-SiCOI platform with a SiC thickness nonuniformity less than 1%. The spatial-mode-interaction-free micro-resonators reported on the CMOS-compatible wafer-scale 4H-SiCOI platform would constitute an important ingredient for the envisaged large-scale integrated nonlinear photonic circuits.
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Liu P, Wen H, Ren L, Shi L, Zhang X. χ (2) nonlinear photonics in integrated microresonators. FRONTIERS OF OPTOELECTRONICS 2023; 16:18. [PMID: 37460874 DOI: 10.1007/s12200-023-00073-4] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Accepted: 05/22/2023] [Indexed: 07/20/2023]
Abstract
Second-order (χ(2)) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ(2) response due to their centrosymmetric structures. A variety of novel material platforms possessing χ(2) nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ(2) nonlinear effects are introduced. Afterward, we highlight the commonly used χ(2) nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ(2) nonlinearity in the field of integrated microcavity photonics.
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Affiliation(s)
- Pengfei Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Linhao Ren
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lei Shi
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Optics Valley Laboratory, Wuhan, 430074, China.
| | - Xinliang Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optics Valley Laboratory, Wuhan, 430074, China
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Ou H, Shi X, Lu Y, Kollmuss M, Steiner J, Tabouret V, Syväjärvi M, Wellmann P, Chaussende D. Novel Photonic Applications of Silicon Carbide. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1014. [PMID: 36770020 PMCID: PMC9919445 DOI: 10.3390/ma16031014] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 01/05/2023] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.
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Affiliation(s)
- Haiyan Ou
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, 2800 Kongens Lyngby, Denmark
| | - Xiaodong Shi
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, 2800 Kongens Lyngby, Denmark
| | - Yaoqin Lu
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, 2800 Kongens Lyngby, Denmark
| | - Manuel Kollmuss
- Crystal Growth Lab, Materials Department 6 (I-Meet), FAU Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
| | - Johannes Steiner
- Crystal Growth Lab, Materials Department 6 (I-Meet), FAU Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
| | - Vincent Tabouret
- Université Grenoble Alpes, CNRS, Grenoble INP, SIMaP, 38000 Grenoble, France
| | | | - Peter Wellmann
- Crystal Growth Lab, Materials Department 6 (I-Meet), FAU Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
| | - Didier Chaussende
- Université Grenoble Alpes, CNRS, Grenoble INP, SIMaP, 38000 Grenoble, France
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Wang C, Fang Z, Yi A, Yang B, Wang Z, Zhou L, Shen C, Zhu Y, Zhou Y, Bao R, Li Z, Chen Y, Huang K, Zhang J, Cheng Y, Ou X. High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics. LIGHT, SCIENCE & APPLICATIONS 2021; 10:139. [PMID: 34226498 PMCID: PMC8257887 DOI: 10.1038/s41377-021-00584-9] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 06/23/2021] [Accepted: 06/24/2021] [Indexed: 05/28/2023]
Abstract
The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 106 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.
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Grants
- National Key R&D Program of China (2017YFE0131300, 2019YFA0705000),Frontier Science Key Program of CAS (No. QYZDY-SSW-JSC032), Chinese-Austrian Cooperative R&D Project (No.GJHZ201950), Program of Shanghai Academic Research Leader (19XD1404600), Shanghai Sailing Program (No. 19YF1456200, 19YF1456400), K. C. Wong Education Foundation (GJTD-2019-11).
- National Natural Science Foundation of China (National Science Foundation of China)
- National Key RD Program of China (2017YFE0131300, 2019YFA0705000)
- Frontier Science Key Program of CAS (No. QYZDY-SSW-JSC032), Chinese-Austrian Cooperative RD Project (No.GJHZ201950), Program of Shanghai Academic Research Leader (19XD1404600)
- Chinese-Austrian Cooperative RD Project (No.GJHZ201950), Program of Shanghai Academic Research Leader (19XD1404600), Shanghai Sailing Program (No. 19YF1456200, 19YF1456400), K. C. Wong Education Foundation (GJTD-2019-11).
- Chinese-Austrian Cooperative R&D Project (No.GJHZ201950), Program of Shanghai Academic Research Leader (19XD1404600), Shanghai Sailing Program (No. 19YF1456200, 19YF1456400), K. C. Wong Education Foundation (GJTD-2019-11).
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Affiliation(s)
- Chengli Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiwei Fang
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
| | - Ailun Yi
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Bingcheng Yang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhe Wang
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China
| | - Liping Zhou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Chen Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Yifan Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yuan Zhou
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China
| | - Rui Bao
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
| | - Zhongxu Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yang Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Kai Huang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Jiaxiang Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China.
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China.
| | - Ya Cheng
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China.
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China.
| | - Xin Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China.
- The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China.
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