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Li G, Feng Y, Li L, Du W, Liu H, Sun X, Zhao X, Ma Y, Jia Y, Chen F. Broadband nonlinear optical response and sub-picosecond carrier dynamics in graphene-SnSe 2 van der Waals heterostructures. OPTICS EXPRESS 2024; 32:2867-2883. [PMID: 38297805 DOI: 10.1364/oe.515354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Accepted: 12/29/2023] [Indexed: 02/02/2024]
Abstract
The van der Waals (vdWs) heterostructures, with vertical layer stacking structure of various two-dimensional (2D) materials, maintain the reliable photonic characteristics while compensating the shortcomings of the participating individual components. In this work, we combine the less-studied multilayer tin selenide (SnSe2) thin film with one of the traditional 2D materials, graphene, to fabricate the graphene-based vdWs optical switching element (Gr-SnSe2) with superior broadband nonlinear optical response. The transient absorption spectroscopy (TAS) measurement results verify that graphene acts as the recombination channel for the photogenerated carrier in the Gr-SnSe2 sample, and the fast recovery time can be reduced to hundreds of femtoseconds which is beneficial for the optical modulation process. The optical switching properties are characterized by the I-scan measurements, exhibiting a saturable energy intensity of 2.82 mJ·cm-2 (0.425 µJ·cm-2) and a modulation depth of 15.6% (22.5%) at the wavelength of 1030 nm (1980nm). Through integrating Gr-SnSe2 with a cladding waveguide, high-performance picosecond Q-switched operation in the near-infrared (NIR) and mid-infrared (MIR) spectral regions are both achieved. This work experimentally demonstrates the great potential of graphene-based vdWs heterostructures for applications in broadband ultrafast photonics.
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Zhou R, Huang J, Liu D, He Y, Li N, Yang L, Yi J, Miao L, Zhao C. High-damage-threshold mid-infrared saturable absorber enabled by tantalum carbide nanoparticles. OPTICS LETTERS 2023; 48:4057-4060. [PMID: 37527117 DOI: 10.1364/ol.494970] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2023] [Accepted: 07/09/2023] [Indexed: 08/03/2023]
Abstract
A stable mid-infrared saturable absorber with a high damage threshold is urgently required for high-performance optical modulation in the mid-infrared regime. Here, we demonstrate stable mid-infrared erbium-doped fiber laser generation modulated by tantalum carbide nanoparticles (TaC NPs) experimentally. The TaC NPs show high physicochemical stability, obvious nonlinear optical absorption, and a high damage threshold. By introducing the TaC-based saturable absorber into an erbium-doped fiber laser, stable nanosecond pulses can be successfully delivered with a minimum pulse duration of 575 ns and signal-to-noise ratio of over 40 dB. The experimental results show that TaC NPs can act as a stable mid-infrared pulse modulator, and may make inroads for developing highly stable broadband optoelectronic devices.
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Huang J, Liu D, Chen L, Li N, Miao L, Zhao C. Broadband saturable absorption of indium tin oxide nanocrystals toward mid-infrared regime. OPTICS LETTERS 2022; 47:6413-6416. [PMID: 36538451 DOI: 10.1364/ol.478536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Accepted: 11/11/2022] [Indexed: 06/17/2023]
Abstract
We experimentally demonstrate the ultrabroadband optical nonlinearity of indium tin oxide nanocrystals (ITO NCs) in the mid-infrared regime. Especially, the ITO NCs show considerable saturation absorption behavior with large modulation depth covering the spectral range from 2-µm to 10-µm wavelength. We also demonstrate the application of the optical nonlinearity to successfully modulate the erbium-doped fluoride fiber laser to deliver a nanosecond pulse with a signal-to-noise ratio over 43 dB at 2.8-µm wavelength. The results provide a promising platform for the development of ITO-based broadband and robust optoelectronic devices toward the deep mid-infrared spectral range.
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Xu S, Zhang H, Yu J, Han Y, Wang Z, Hu J. Ultrafast modulation of a high harmonic generation in a bulk ZnO single crystal. OPTICS EXPRESS 2022; 30:41350-41358. [PMID: 36366615 DOI: 10.1364/oe.462638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Accepted: 08/03/2022] [Indexed: 06/16/2023]
Abstract
Optical modulation of high harmonic generation (HHG) is of fundamental interest in science and technology, which can facilitate understanding of HHG generation mechanisms and expand the potential optoelectronic applications. However, the current established works have neither shown the advanced modulation performance nor provided a deep understanding of modulation mechanisms. In this work, taking wurtzite zinc oxide (ZnO) single crystal as a prototype, we have demonstrated an all-optical intensity modulation of high-order HHG with a response time of less than 0.2 ps and a depth of more than 95%, based on the pump-probe configuration with two different pumping wavelengths. Besides the achieved excellent modulation performance, we have also revealed that the modulation dynamics in ZnO single crystal highly depend on the excitation conditions. Specifically, the modulation dynamics with the near-bandgap or above-bandgap excitation are attributed to the non-equilibrium interband carrier relaxations, while for mid-gap excitation, the modulation dynamics are dominated by the nonlinear frequency mixing process. This work may enhance the current understanding of the HHG modulation mechanism and enlighten novel device designs.
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Li ZH, He JX, Lv XH, Chi LF, Egbo KO, Li MD, Tanaka T, Guo QX, Yu KM, Liu CP. Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films. Nat Commun 2022; 13:6346. [PMID: 36289237 PMCID: PMC9606309 DOI: 10.1038/s41467-022-34117-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Accepted: 10/13/2022] [Indexed: 11/09/2022] Open
Abstract
As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Auger heating significantly slow down the cooling rate of hot-carriers in the case of high excitation density. The effect of defects on the carrier recombination and the two-photon induced ultrafast carrier dynamics are also investigated. These findings are crucial to the optoelectronic applications of copper iodide.
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Affiliation(s)
- Zhan Hua Li
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China ,grid.263451.70000 0000 9927 110XCenter of Semiconductor Materials and Devices, Shantou University, 515063 Shantou, Guangdong China
| | - Jia Xing He
- grid.263451.70000 0000 9927 110XDepartment of Chemistry, Shantou University, 515063 Shantou, Guangdong China
| | - Xiao Hu Lv
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China ,grid.263451.70000 0000 9927 110XCenter of Semiconductor Materials and Devices, Shantou University, 515063 Shantou, Guangdong China
| | - Ling Fei Chi
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China
| | - Kingsley O. Egbo
- grid.35030.350000 0004 1792 6846Department of Physics, City University of Hong Kong, 83 Tat Chee Ave., Kowloon, Hong Kong ,grid.5336.30000 0004 0497 2560Paul-Drude-Institut fur Festkorperelektronik, Liebniz-Institut im Forschungsverbund Berlin e. V, Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Ming-De Li
- grid.263451.70000 0000 9927 110XDepartment of Chemistry, Shantou University, 515063 Shantou, Guangdong China
| | - Tooru Tanaka
- grid.412339.e0000 0001 1172 4459Synchrotron Light Application Center, Saga University, Saga, 840-8502 Japan
| | - Qi Xin Guo
- grid.412339.e0000 0001 1172 4459Synchrotron Light Application Center, Saga University, Saga, 840-8502 Japan
| | - Kin Man Yu
- grid.35030.350000 0004 1792 6846Department of Physics, City University of Hong Kong, 83 Tat Chee Ave., Kowloon, Hong Kong
| | - Chao Ping Liu
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China ,grid.263451.70000 0000 9927 110XCenter of Semiconductor Materials and Devices, Shantou University, 515063 Shantou, Guangdong China
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Wang G, Mei S, Liao J, Wang W, Tang Y, Zhang Q, Tang Z, Wu B, Xing G. Advances of Nonlinear Photonics in Low-Dimensional Halide Perovskites. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100809. [PMID: 34121324 DOI: 10.1002/smll.202100809] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2021] [Revised: 03/17/2021] [Indexed: 06/12/2023]
Abstract
Hybrid halide perovskites emerging as a highly promising class of functional materials for semiconductor optoelectronic applications have drawn great attention from worldwide researchers. In the past few years, prominent nonlinear optical properties have been demonstrated in perovskite bulk structures indicating their bright prospect in the field of nonlinear optics (NLO). Following the surge of 3D perovskites, more recently, the low-dimensional perovskites (LDPs) materials ranging from two-, one-, to zero-dimension such as quantum-wells or colloidal nanostructures have displayed unexpectedly attractive NLO response due to the strong quantum confinement, remarkable exciton effect, and structural diversity. In this perspective, the current state of the art is reviewed in the field of NLO for LDP materials. The relationship between confinement effect and NLO is analyzed systematically to give a comprehensive understanding of the function of dimension reduction. Furthermore, future directions and challenges toward the improvement of the NLO in LDP materials are discussed to provide an outlook in this rapidly developing field.
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Affiliation(s)
- Gang Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
| | - Shiliang Mei
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
| | - Jinfeng Liao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
| | - Wei Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yuxin Tang
- College of Chemical Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zikang Tang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
| | - Bo Wu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
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Park T, Hur J. Self-Powered Low-Cost UVC Sensor Based on Organic-Inorganic Heterojunction for Partial Discharge Detection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100695. [PMID: 34114327 DOI: 10.1002/smll.202100695] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2021] [Revised: 03/22/2021] [Indexed: 06/12/2023]
Abstract
Power outages caused by the aging of high-voltage power facilities can cause significant economic and social damage. To prevent such problems, it is necessary to implement a widespread and sustainable monitoring system. Partial discharge (PD) is a preliminary symptom of power equipment aging accompanying the light, typically in the UV range. UVC (200-280 nm) is more useful than UVA and UVB because of low interference from the environment owing to its solar-blindness by the stratosphere. Therefore, to realize a wide-range and durable diagnosis system, it is necessary to develop sensors that can selectively detect UVC, while enabling mass production at low-cost and low power consumption. Here, a solution-processable photodiode sensor that is inexpensive, mass-producible, and self-powered with selective UVC detection is developed. The optoelectronic characteristics of photodiode consisting of organic p-polymer and inorganic n-ZnO nanoparticles are systematically studied to determine the optimum p-type polymer and its thickness. The device shows high-performance: fast response time (rise/fall time: 36.6/37.0 ms) and high spectral response in the UVC region (maximum responsivity of 20 mA W-1 ) under self-powered operation. Furthermore, the practical application of the device to detect PD signals with a visual alarm system under UVC release conditions is demonstrated.
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Affiliation(s)
- Taehyun Park
- Department of Chemical and Biological Engineering, Gachon University, Seongnam, Gyeonggi, 13120, Republic of Korea
| | - Jaehyun Hur
- Department of Chemical and Biological Engineering, Gachon University, Seongnam, Gyeonggi, 13120, Republic of Korea
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Wang Y, Wang Y, Chen K, Qi K, Xue T, Zhang H, He J, Xiao S. Niobium Carbide MXenes with Broad-Band Nonlinear Optical Response and Ultrafast Carrier Dynamics. ACS NANO 2020; 14:10492-10502. [PMID: 32687315 DOI: 10.1021/acsnano.0c04390] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Exploring the nonlinear photonics of emerging promising two-dimensional (2D) materials like MXenes will boost the development of broad-band optoelectronic and photonic applications. In this paper, the broad-band nonlinear optical response and the excited-carrier dynamics of an emerging MXene, Nb2C, are systematically investigated for the wavelength range of visible to the near-infrared band. The obtained nonlinear optical response shows a wavelength and excitation intensity dependence. The imaginary part of the third-order nonlinear optical susceptibility Imχ(3) and figure of merit were found to be -1.4 × 10-10 esu and 7.5 × 10-12 esu cm, respectively. The interesting nonlinear absorption response inversion properties (e.g., a shift from saturable absorption to two-photon absorption) of Nb2C nanosheets in the near-infrared promise possible important applications in nonlinear photonics, such as an optical switch. We also demonstrate that the wavelength-dependent relaxation times consist of two different relaxation components, that is, time constants in which one is hundreds of femtoseconds and the other is several picoseconds. Our results indicate promising potential in near-infrared nanophotonic applications of 2D Nb2C and offer a promising candidate for 2D-material-based nanophotonic devices and beyond.
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Affiliation(s)
- Yiduo Wang
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R. China
| | - Yingwei Wang
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R. China
- Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China
| | - Keqiang Chen
- Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China
| | - Kun Qi
- Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China
| | - Tianyu Xue
- Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China
| | - Han Zhang
- Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China
| | - Jun He
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R. China
| | - Si Xiao
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R. China
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