InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes

Limited impact of the sidewall effect in dependence of temperature for InGaN-based blue micro-LEDs grown on a silicon substrate

The electroluminescence (EL) properties of InGaN-based micro-LEDs grown on a silicon substrate are investigated in this Letter to reveal the dominant mechanism in dependence on different temperatures and dimensions. The invalidation of sidewall nonradiative recombination and the impact of localization-induced carrier tunneling on the external quantum efficiency (EQE) are analyzed systematically to realize high performance silicon-based micro-LEDs. Microscopic EL mapping exhibits that the localized carriers in the silicon-grown micro-LED mainly recombine in the central region of mesa. The defects in the multiple quantum wells (MQWs) grown on the silicon substrate can lead to carrier tunneling and EQE reduction at cryogenic temperatures below 200 K, which is more conspicuous for the 30 μm device with a larger inner area ratio. The low-temperature EQE evolution can be attributed to the trade-off between localization-induced tunneling and Shockley-Read-Hall (SRH) recombination.

Schottky-contact intrinsic current blocking layer for high efficiency AlGaInP-based red mini-LEDs

AlGaInP-based red light emitting diodes (LEDs) are considered as promising light sources in future full-color displays. At present, vertical chip configuration is still the mainstream device structure of AlGaInP-based red LEDs. However, current crowding around p-electrode severely hinders an efficient improvement. Here, we propose a Schottky-contact current blocking layer (SCBL) to enhance current spreading and to improve light extraction efficiency of AlGaInP-based red vertical miniaturized LEDs (mini-LEDs). By utilizing the Schottky contact between ITO and p-GaP, the SCBL can hinder current crowding around the p-electrode. The current is forced to inject into an active region through a p-GaP+ ohmic contact layer, avoiding light absorption by p-electrode. Through the transfer length method, the Schottky contact characteristics between the ITO and p-GaP as well as the ohmic contact characteristics between ITO and p-GaP+ are demonstrated. Benefiting from superior current spreading and improved light extraction, a mini-LED with SCBL realizes an enhancement of 31.8% in external quantum efficiency (EQE) at 20 mA in comparison with a mini-LED without SCBL.

High Power Pulsed LED Driver for Vibration Measurements

Vibration measurements pose specific experimental challenges to be faced. In particular, optical methods can be used to obtain full-field vibration information. In this scenario, stereo-camera systems can be developed to obtain 3D displacement measurements. As vibration frequency increases, the common approach is to reduce camera exposure time to avoid blurred images, which can lead to under-exposed images and data loss, as well as issues with the synchronization of the stereo pair. Both of these problems can be solved by using high-intensity light pulses, which can produce high-quality images and guarantee camera synchronization since data is saved by both cameras only during the short-time light pulse. To this extent, high-power Light-Emitting Diodes (LEDs) can be used, but even if the LED itself can have a fast response time, specific electronic drivers are needed to ensure the desired timing of the light pulse. In this paper, a circuit is specifically designed to achieve high-intensity short-time light pulses in the range of 1 µs. A prototype of the designed board was assembled and tested to check its capability to respect the specification. Three different measurement methods are proposed and validated to achieve short-time light pulse measurements: shunt voltage measurement, direct photodiode measurement with a low-cost sensor, and indirect pulse measurement through a low-frame-rate digital camera.

Potassium Iodide Doping for Vacancy Substitution and Dangling Bond Repair in InP Core-Shell Quantum Dots

This work highlights the novel approach of incorporating potassium iodide (KI) doping during the synthesis of In0.53P0.47 core quantum dots (QDs) to significantly reduce the concentration of vacancies (i.e., In vacancies; VIn-) within the bulk of the core QD and inhibit the formation of InPOx at the core QD-Zn0.6Se0.4 shell interfaces. The photoluminescence quantum yield (PLQY) of ~97% and full width at half maximum (FWHM) of ~40 nm were achieved for In0.53P0.47/Zn0.6Se0.4/Zn0.6Se0.1S0.3/Zn0.5S0.5 core/multi-shell QDs emitting red light, which is essential for a quantum-dot organic light-emitting diode (QD-OLED) without red, green, and blue crosstalk. KI doping eliminated VIn- in the core QD bulk by forming K+-VIn- substitutes and effectively inhibited the formation of InPO4(H2O)2 at the core QD-Zn0.6Se0.4 shell interface through the passivation of phosphorus (P)-dangling bonds by P-I bonds. The elimination of vacancies in the core QD bulk was evidenced by the decreased relative intensity of non-radiative unpaired electrons, measured by electron spin resonance (ESR). Additionally, the inhibition of InPO4(H2O)2 formation at the core QD and shell interface was confirmed by the absence of the {210} X-ray diffraction (XRD) peak intensity for the core/multi-shell QDs. By finely tuning the doping concentration, the optimal level was achieved, ensuring maximum K-VIn- substitution, minimal K+ and I- interstitials, and maximum P-dangling bond passivation. This resulted in the smallest core QD diameter distribution and maximized optical properties. Consequently, the maximum PLQY (~97%) and minimum FWHM (~40 nm) were observed at 3% KI doping. Furthermore, the color gamut of a QD-OLED display using R-, G-, and B-QD functional color filters (i.e., ~131.1%@NTSC and ~98.2@Rec.2020) provided a nearly perfect color representation, where red-light-emitting KI-doped QDs were applied.

Temperature-dependent electroluminescence of red high-In-content MQWs of dual-wavelength micro-LED

Temperature-dependent electroluminescence (TDEL) measurements have been employed to investigate the carrier transport and recombination processes of InGaN red micro-LED based on dual-wavelength InGaN/GaN MQWs structure. EL peak energy and carrier transport of the red micro-LED both show temperature dependence, due to temperature-induced changes in defect activation. In addition, the current density at which the blue peak of the low-In-content appears in the EL spectrum varies with temperature. As the temperature increases, the blue peak of the low In component tends to appear at higher current densities, which may be attributed to the increase in thermally activated defects hindering the injection of holes into the low-In-content MQWs further away from p-GaN. Furthermore, the IQEs of the high-In-content MQWs are estimated from the TDEL method and then reveal the temperature-dependent efficiency droop. The IQE decreases as temperature increases, particularly above 50 K, where it drops sharply due to temperature-dependent nonradiative recombination. And the two different variation trends in IQE of MQWs with high and low In content reveal a competitive mechanism in carrier distribution, implying that more escaping holes from high-In-content MQWs will further reduce red emission efficiency but enhance carrier injection and blue emission in low-In-content MQWs.

Improving the Electroluminescence Properties of New Chrysene Derivatives with High Color Purity for Deep-Blue OLEDs

Two blue-emitting materials, 4-(12-([1,1':3',1″-terphenyl]-5'-yl)chrysen-6-yl)-N,N-diphenylaniline (TPA-C-TP) and 6-([1,1':3',1″-terphenyl]-5'-yl)-12-(4-(1,2,2-triphenylvinyl)phenyl)chrysene (TPE-C-TP), were prepared with the composition of a chrysene core moiety and terphenyl (TP), triphenyl amine (TPA), and tetraphenylethylene (TPE) moieties as side groups. The maximum photoluminescence (PL) emission wavelengths of TPA-C-TP and TPE-C-TP were 435 and 369 nm in the solution state and 444 and 471 nm in the film state. TPA-C-TP effectively prevented intermolecular packing through the introduction of TPA, a bulky aromatic amine group, and it showed an excellent photoluminescence quantum yield (PLQY) of 86% in the film state. TPE-C-TP exhibited aggregation-induced emission; the PLQY increased dramatically from 0.1% to 78% from the solution state to the film state. The two synthesized materials had excellent thermal stability, with a high decomposition temperature exceeding 460 °C. The two compounds were used as emitting layers in a non-doped device. The TPA-C-TP device achieved excellent electroluminescence (EL) performance, with Commission Internationale de L'Eclairage co-ordinates of (0.15, 0.07) and an external quantum efficiency of 4.13%, corresponding to an EL peak wavelength of 439 nm.

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes

Here, we propose a sandwich-like Si-doping scheme (undoped/Si-doped/undoped) in Al0.6Ga0.4N quantum barriers (QBs) to simultaneously promote the optoelectronic performances and reliability of deep ultraviolet light-emitting diodes (DUV-LEDs). Through experimental and numerical analyses, in the case of DUV-LEDs with conventional uniform Si-doping QB structure, severe operation-induced reliability degradation, including the increase of reverse leakage current (IR) and reduction of light output power (LOP), will offset the enhancement of optoelectronic performances as the Si-doping levels increase to an extent, which hinders further development of DUV-LEDs. According to a transmission electron microscope characterization and a numerical simulation, an improved interfacial quality in multiple quantum wells (MQWs) and more uniform carrier distribution within MQWs are demonstrated for our proposed Si-doping structure in comparison to the uniform Si-doping structure. Consequently, the proposed DUV-LED shows superior wall-plug efficiency (4%), IR at -6 V reduced by almost one order of magnitude, and slower LOP degradation after 168-h 100 mA-current-stress operation. This feasible doping scheme provides a promising strategy for the high-efficiency and cost-competitive DUV-LEDs.

Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

AlGaInP-based light-emitting diodes (LEDs) suffer from a low external quantum efficiency (EQE), which is mainly restrained by the poor light extraction efficiency. Here, we demonstrate AlGaInP-based vertical miniaturized-LEDs (mini-LEDs) with a porous n-AlGaInP surface using a wet etching process to boost light extraction. We investigated the effects of etching time on the surface morphology of the porous n-AlGaInP surface. We found that as the etching time is prolonged, the density of pores increases initially and decreases subsequently. In comparison with the vertical mini-LED with a smooth n-AlGaInP surface, the vertical mini-LEDs with the porous n-AlGaInP surface reveal improvement in light output power and EQE, meanwhile, without the deterioration of electrical performance. The highest improvement of 38.9% in EQE measured at 20 mA is observed from the vertical mini-LED with the maximum density of the pores. Utilizing a three-dimensional finite-difference time-domain method, we reveal the underlying mechanisms of improved performance, which are associated with suppressed total internal reflection and efficient light scattering effect of the pores.

Improving optoelectronic performance and modulation bandwidth of green µ-LEDs via a compound pre-strained strategy

A composite strain-modulation strategy to achieve high-performing green µ-LED devices for visible light communication is proposed. Compared with the conventional pre-well structure, introducing a pre-layer to enlarge the lateral lattice constant of the underlayer decreased the strain in the overall strain-modulated layer and MQW. This improved the crystal quality and suppressed the quantum confinement Stark effect. Using this modulation strategy, the green µ-LED array with the compound pre-strained structure exhibited a light output power of 20.5 mW and modulation bandwidth of 366 MHz, corresponding to improvements of 61% and 78%, respectively, compared with those of µ-LEDs with a pre-well structure.

Contact Engineering of III-Nitrides and Metal Schemes toward Efficient Deep-Ultraviolet Light-Emitting Diodes

Throughout the development of III-nitride electronic and optoelectronic devices, electrically interfacing III-nitride semiconductors and metal schemes has been a long-standing issue that determines the contact resistance and operation voltage, which are tightly associated with the device performance and stability. Compared to the main research focus of the crystal quality of III-nitride semiconductors, the equally important contact interface between III-nitrides and metal schemes has received relatively less attention. Here, we demonstrate a comprehensive contact engineering strategy to realize low resistance to Al-rich n-AlGaN via pretreatment and metal scheme optimization. Prior to the metal deposition, the introduction of CHF3 treatment is conducive to the substantial resistance reduction, with the effect becoming more distinct by prolonging the treatment time. Furthermore, we compare different metal schemes, namely, Ti/Al/Ti/Au, Ti/Al/Ti/Pt/Au, and Cr/Ti/Al/Ti/Pt/Au, to form electrical contact on n-AlGaN. From microscale analysis based on multiple characterization methods, we reveal the correlation between electrical properties and the nature of the contact interface, attributing the contact improvement to the low-resistance Pt- and Cr-related alloy formation. Under the circumstance that no efforts have been devoted to optimizing the epitaxial growth, engineering the metal-semiconductor contact properties alone leads to a resistance value of 8.96 × 10-5 Ω·cm2. As a result, the fabricated deep-ultraviolet LEDs exhibit an ultralow forward voltage of 5.47 V at 30 A/cm2 and a 33% increase in the peak wall-plug efficiency.

Large-sized light-emitting diode integrated with a thermopile for on-chip temperature and power monitoring

A large-sized multiple quantum well (MQW) light-emitting diode (LED) integrated with a thermopile for on-chip temperature and power monitoring is presented in this study. Seven thermopile structures, fully compatible with the fabrication of LEDs, are strategically placed at different locations on the LED to monitor its temperature during the operation. Additionally, the thermopile allows for monitoring the power of the LED, as there exists an approximate linear relationship between the light output power and temperature. Compared to traditional methods of measuring LED temperature, the thermopile offers several advantages, including no moving parts, long lifetime, no maintenance, high reliability, and direct conversion without intermediate processes. The results demonstrate that the integration of the thermopiles onto the LED provides superior temperature and power monitoring capabilities. Furthermore, this integrated solution has the potential to enable real-time management and control of LED temperature.

Analysis of size-dependent optoelectronic properties of red AlGaInP micro-LEDs

We have theoretically investigated the size-dependent optoelectronic properties of InGaP/AlGaInP-based red micro-LEDs through an electro-optical-thermal coupling model. The model considers thermal effects due to current crowding near the electrodes, non-thermal efficiency droop due to electron leakage, and etch defects on the LED sidewall. Sidewall defects reduce the carrier concentration at the light-emitting surface's edge and exacerbate the current crowding effect. In addition, p-side electron leakage at high current densities is the leading cause of the efficiency droop of AlGaInP LEDs. In contrast, the effect of temperature on the overall efficiency degradation of LEDs is even more significant.

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

Currently, GaN-based blue- and green-light-emitting devices have achieved successful applications in practice, while the luminescence efficiency of devices with longer wavelengths (such as yellow light) is still very low. Therefore, in this paper, the electroluminescence characterization of yellow-light-emitting InGaN/GaN multiple quantum wells (MQWs) with different In content in the last InGaN quantum well, which is next to the p-type GaN electrode layer, are investigated numerically to reveal a possible physical mechanism by which the different distribution of In content in the active region impacts the carrier capture and the light emission process in yellow InGaN/GaN MQWs. The simulation results show that at low injection currents, the luminescence efficiency of high-In-content yellow MQWs is enhanced, which can be ascribed to the enhanced radiative recombination process induced by the increased carrier concentration in the last InGaN quantum wells with promoted carrier capture ability. However, in the case of high injection condition, the luminescence efficiency of yellow MQWs deteriorates with increasing In content, i.e., the droop effect becomes remarkable. This can be ascribed to both significantly enhanced Auger recombination and electron leakage in the last InGaN quantum well, induced also by the promoted capture ability of charge carriers.

Improved efficiency of AlGaN-based flip-chip deep-ultraviolet LEDs using a Ni/Rh/Ni/Au p-type electrode

Here, we propose a thermally stable and high-reflectivity Ni/Rh/Ni/Au p-type electrode for AlGaN-based deep-ultraviolet (DUV) flip-chip light-emitting diodes (FCLEDs). We discover that the reflectance of Ni/Au electrode deteriorated significantly after rapid thermal annealing. Experiments show that Ni and Au agglomerate at high temperatures, and more incident photons traverse the gaps between the agglomerates, leading to a decrease in reflectance of Ni/Au after annealing. In contrast, the proposed Ni/Rh/Ni/Au p-type electrode shows remarkable thermal stability as a result of the suppression of Ni agglomeration by the Rh layer at high temperatures. Besides, due to the higher reflectivity of the Ni/Rh/Ni/Au electrode and its lower specific contact resistivity formed with p-GaN, the external quantum efficiency and wall-plug efficiency of a DUV FCLED with Ni/Rh/Ni/Au electrode are increased by 13.94% and 17.30% in comparison with the one with Ni/Au electrode at an injection current of 100 mA. The Ni/Rh/Ni/Au electrode effectively solves the long-standing dilemma of efficiency degradation of DUV FCLEDs with a Ni/Au electrode after high-temperature annealing.

Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs

Here, we propose nanoimprinted patterned sapphire with a silica array (PSSA) with the aim to promote the efficiency of InGaN-based green (∼520 nm) mini-LEDs. According to x-ray diffraction measurements, the threading dislocation density of GaN epitaxial layers grown on nanoimprinted PSSA demonstrates a pronounced reduction compared with the epilayers on the conventional patterned sapphire substrate (PSS). Consequently, a mini-LED on PSSA exhibits a significantly boosted light output power (LOP) in comparison to a mini-LED on PSS. At 10 mA, the LOP of the mini-LED on PSS is 6.0 mW, and this is further improved to 6.8 mW for the mini-LED on PSSA. Moreover, the peak external quantum efficiencies of the mini-LEDs on PSS and PSSA are 41% and 47%, respectively. A three-dimensional (3D) finite-difference time-domain simulation demonstrates that the PSSA contributes enhanced light extraction for photons emitted from the active region. It is also highly feasible to use this nanoimprinted PSSA technology in red and blue mini-LEDs for the realization of full-color displays.

"Blue-free" orange ZnO-related light-emitting diode based on a natural interface layer of Ga2O3 and ZnGa2O4

To fabricate a ZnO-related light-emitting diode (LED) with zero emission at blue wavelengths ("blue-free"), an ingenious strategy is employed. Specifically, for the first time to the best of our knowledge, a natural oxide interface layer, possessing remarkable visible emission potential, is introduced into the Au/i-ZnO/n-GaN metal-insulator-semiconductor (MIS) structure. The unique Au/i-ZnO/interface layer/n-GaN structure successfully eliminated the harmful blue emissions (400-500 nm) from the ZnO film, and the remarkable orange electroluminescence is mainly attributed to the impact ionization process of the natural interface layer at high electric field. It is worth mentioning that the device achieved ultra-low color temperature (2101 K) and excellent color rendering index (92.8) under electrical injection, indicating that the device could fulfill the requirements of electronic display systems and general illumination, and might even play unexpected roles in special lighting domains. The results obtained provide a novel and effective strategy for the design and preparation of ZnO-related LEDs.

Thermal decomposition of trimethylindium and indium trisguanidinate precursors for InN growth: An ab initio and kinetic modeling study

Indium nitride (InN) is an interesting material for future electronic and photonic-related applications, as it combines high electron mobility and low-energy band gap for photoabsorption or emission-driven processes. In this context, atomic layer deposition techniques have been previously employed for InN growth at low temperatures (typically <350 °C), reportedly yielding crystals with high quality and purity. In general, this technique is assumed to not involve any gas phase reactions as a result from the time-resolved insertion of volatile molecular sources into the gas chamber. Nonetheless, such temperatures could still favor the precursor decomposition in the gas phase during the In half-cycle, therefore altering the molecular species that undergoes physisorption and, ultimately, driving the reaction mechanism to pursue other pathways. Thence, we herein evaluate the thermal decomposition of relevant In precursors in the gas phase, namely, trimethylindium (TMI) and tris(N,N'-diisopropyl-2-dimethylamido-guanidinato) indium (III) (ITG), by means of thermodynamic and kinetic modeling. According to the results, at T = 593 K, TMI should exhibit partial decomposition of ∼8% after 400 s to first generate methylindium and ethane (C2H6), a percentage that increases to ∼34% after 1 h of exposure inside the gas chamber. Therefore, this precursor should be present in an intact form to undergo physisorption during the In half-cycle of the deposition (<10 s). On the other hand, the ITG decomposition starts already at the temperatures used in the bubbler, in which it slowly decomposes as it is evaporated during the deposition process. At T = 300 °C, the decomposition is a fast process that reaches 90% completeness after 1 s and where equilibrium, at which almost no ITG remains, is achieved before 10 s. In this case, the decomposition pathway is likely to occur via elimination of the carbodiimide ligand. Ultimately, these results should contribute for a better understanding of the reaction mechanism involved in the InN growth from these precursors.

Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs' formation by molecular beam epitaxy on both matched GaP and artificial GaP/Si substrates were determined. An almost complete plastic relaxation of the elastic strain in SAQDs was reached. The strain relaxation in the SAQDs on the GaP/Si substrates does not lead to a reduction in the SAQDs luminescence efficiency, while the introduction of dislocations into SAQDs on the GaP substrates induced a strong quenching of SAQDs luminescence. Probably, this difference is caused by the introduction of Lomer 90°-dislocations without uncompensated atomic bonds in GaP/Si-based SAQDs, while threading 60°-dislocations are introduced into GaP-based SAQDs. It was shown that GaP/Si-based SAQDs have an energy spectrum of type II with an indirect bandgap and the ground electronic state belonging to the X-valley of the AlP conduction band. The hole localization energy in these SAQDs was estimated equal to 1.65-1.70 eV. This fact allows us to predict the charge storage time in the SAQDs to be as long as >>10 years, and it makes GaSb/AlP SAQDs promising objects for creating universal memory cells.

One-Pot Synthesis of Dual Color-Emitting CDs: Numerical and Experimental Optimization towards White LEDs

Carbon Dots (CDs) are fluorescent carbon-based nanoparticles that have attracted increasing attention in recent years as environment-friendly and cost-effective fluorophores. An application that can benefit from CDs in a relatively short-term perspective is the fabrication of color-converting materials in phosphor-converted white LEDs (WLEDs). In this work we present a one-pot solvothermal synthesis of polymer-passivated CDs that show a dual emission band (in the green and in the red regions) upon blue light excitation. A purposely designed numerical approach enables evaluating how the spectroscopic properties of such CDs can be profitable for application in WLEDs emulating daylight characteristics. Subsequently, we fabricate nanocomposite coatings based on the dual color-emitting CDs via solution-based strategies, and we compare their color-converting properties with those of the simulated ones to finally accomplish white light emission. The combined numerical and experimental approach can find a general use to reduce the number of experimental trial-and-error steps required for optimization of CD optical properties for lighting application.

Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effect

We have demonstrated piezo-phototronic enhanced modulation in green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) structure. It is found that an a-axis oriented MWA structure induces more c-axis compressive strain than a flat structure when a convex bending strain is applied. Moreover, the photoluminescence (PL) intensity exhibits a tendency to increase first and then decrease under the enhanced compressive strain. Specifically, light intensity reaches a maximum of about 123% accompanied by 1.1-nm blueshift, and the carrier lifetime comes to the minimum simultaneously. The enhanced luminescence characteristics are attributed to strain-induced interface polarized charges, which modulate the built-in field in InGaN/GaN MQWs and could promote the radiative recombination of carriers. This work opens a pathway to drastically improve InGaN-based long-wavelength micro-LEDs with highly efficient piezo-phototronic modulation.

Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate

This paper presents alternate pairs of InGaN/GaN prestrained layers with varying indium compositions, which are inserted between the GaN/InGaN MQW active region and the n-GaN layer in a light-emitting diode (LED) nanostructure in order to obtain enhanced optical characteristics. The device is mounted on a silicon substrate followed by a GaN buffer layer that promotes charge injection by minimizing the energy barrier between the electrode and active layers. The designed device attains more than 2.897% enhancement in efficiency when compared with the conventional LED, which is attributed to the reduction of a polarization field within the MQW region. The proposed device with 15% indium composition in the prestrained layer attains a maximum efficiency of 85.21% and a minimized efficiency droop of 3.848% at an injection current of 40 mA, with high luminous power in the output spectral range. The device also shows a minimum blueshift in the spectral range, indicating a decrease in the piezoelectric polarization.

Automatic Illumination Control Method for Indoor Luminaires Based on Multichromatic Quantum Dot Light-Emitting Diodes

Energy saving and visual comfort are two main considerations in designing of automatic illumination control systems. However, energy-saving-oriented illumination control always causes optical spectra drifting in light-conversion-material-based white light-emitting diodes (WLEDs), which are conventionally used as artificial luminaires in indoor areas. In this study, we propose a method for InP quantum dot (QD)-based WLEDs to minimize optical energy consumption by considering the influence caused by the outdoor environment and neighboring WLED units. Factors of (a) dimensions of room window and WLED matrix, (b) distance between WLED units, lighting height, species of InP QDs, and (c) user distribution are taken into consideration in calculation. Parameters of correlated color temperature (CCT) and color rendering index (Ra) of the WLED matrix are optimized according to the lighting environment to improve user visual comfort level. By dynamically controlling the light ingredients and optical power of WLEDs, we optimize the received illuminance distribution of table tops, improve the lighting homogeneity of all users, and guarantee the lowest energy consumption of the WLED matrix. The proposed approach can be flexibly applied in large-scale WLED intelligent controlling systems for industrial workshops and office buildings.