Ahmadivand A, Karabiyik M, Pala N. Fano-like resonances in split concentric nanoshell dimers in designing negative-index metamaterials for biological-chemical sensing and spectroscopic purposes.
APPLIED SPECTROSCOPY 2015;
69:563-573. [PMID:
25811974 DOI:
10.1366/14-07750]
[Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
In this study, we investigated numerically the plasmon response of a dimer configuration composed of a couple of split and concentric Au nanoshells in a complex orientation. We showed that an isolated composition of two concentric split nanoshells could be tailored to support strong plasmon resonant modes in the visible wavelengths. After determining the accurate geometric dimensions for the presented antisymmetric nanostructure, we designed a dimer array that shows complex behavior during exposure to different incident polarizations. We verified that the examined dimer was able to support destructive interference between dark and bright plasmon modes, which resulted in a pronounced Fano-like dip. Observation of a Fano minimum in such a simple molecular orientation of subwavelength particles opens new avenues for employing this structure in designing various practical plasmonic devices. Depositing the final dimer in a strong coupling condition on a semiconductor metasurface and measuring the effective refractive index at certain wavelengths, we demonstrate that each one of dimer units can be considered a meta-atom due to the high aspect ratio in the geometric parameters. Using this method, by extending the number of dimers periodically and illuminating the structure, we examined the isotropic, polarization-dependent, and transmission behavior of the metamaterial configuration. Using numerical methods and calculating the effective refractive indices, we computed and sketched corresponding figure of merit over the transmission window, where the maximum value obtained was 42.3 for Si and 54.6 for gallium phosphide (GaP) substrates.
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