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Albano G, Portus L, Martinelli E, Pescitelli G, Di Bari L. Impact of Temperature on the Chiroptical Properties of Thin Films of Chiral Thiophene-based Oligomers. Chempluschem 2024; 89:e202300667. [PMID: 38339881 DOI: 10.1002/cplu.202300667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 02/05/2024] [Accepted: 02/08/2024] [Indexed: 02/12/2024]
Abstract
According to the theoretical model based on the Mueller matrix approach, the experimental electronic circular dichroism (ECD) for thin films of chiral organic dyes can be expressed as the sum of several contributions, two of which are the most significant: 1) an intrinsic component (CDiso) invariant upon sample orientation, reflecting the molecular and/or supramolecular chirality, due to 3D-chiral nanoscopic structures; 2) a non-reciprocal component (LDLB) which inverts its sign upon sample flipping, which arises from the interaction of linear dichroism and linear birefringence in locally anisotropic domains, expression of 2D-chiral micro/mesoscopic structures. In this work, we followed in parallel through ECD and differential scanning calorimetry (DSC) the temperature evolution of the supramolecular arrangements of thin films of five structurally related chiral thiophene-based oligomers with different LDLB/CDiso ratio. By increasing the temperature, regardless of phase transitions observed by DSC analysis, systems with strong CDiso revealed no changes in the ECD spectrum, while compounds with dominant LDLB contribution underwent a gradual (and reversible) reduction of (apparent) ECD signals. These findings demonstrated that the concomitant occurrence of intrinsic and non-reciprocal components in the ECD spectrum of thin films of chiral organic dyes is strictly correlated with solid-state organizations of different stability.
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Affiliation(s)
- Gianluigi Albano
- Dipartimento di Chimica e Chimica Industriale, Università di Pisa, Via Giuseppe Moruzzi 13, 56124, Pisa, Italy
| | - Lorenzo Portus
- Dipartimento di Chimica e Chimica Industriale, Università di Pisa, Via Giuseppe Moruzzi 13, 56124, Pisa, Italy
| | - Elisa Martinelli
- Dipartimento di Chimica e Chimica Industriale, Università di Pisa, Via Giuseppe Moruzzi 13, 56124, Pisa, Italy
| | - Gennaro Pescitelli
- Dipartimento di Chimica e Chimica Industriale, Università di Pisa, Via Giuseppe Moruzzi 13, 56124, Pisa, Italy
| | - Lorenzo Di Bari
- Dipartimento di Chimica e Chimica Industriale, Università di Pisa, Via Giuseppe Moruzzi 13, 56124, Pisa, Italy
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2
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Guo L, Hu S, Gu X, Zhang R, Wang K, Yan W, Sun X. Emerging Spintronic Materials and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301854. [PMID: 37309258 DOI: 10.1002/adma.202301854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 06/01/2023] [Indexed: 06/14/2023]
Abstract
The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.
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Affiliation(s)
- Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Shunhua Hu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xianrong Gu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Rui Zhang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Wenjing Yan
- School of Physics and Astronomy, University of Nottingham, University Park, Nottingham, NG9 2RD, UK
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Material Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
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3
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Tanguturi RG, Tsai JC, Li YS, Tsay JS. Impact of a rubrene buffer layer on the dynamic magnetic behavior of nickel layers on Si(100). Phys Chem Chem Phys 2023; 25:32029-32039. [PMID: 37982149 DOI: 10.1039/d3cp04463g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
Interfaces of ferromagnetic/organic material hybrid structures refer to the spin interface that governs physical properties for achieving high spin polarization, low impedance mismatch, and long spin relaxation. Spintronics can add new functionalities to electronic devices by taking advantage of the spin degree of freedom of electrons, which makes understanding the dynamic magnetic properties of magnetic films important for spintronic device applications. Our knowledge regarding the magnetic dynamics and magnetic anisotropy of combining ferromagnetic layer and organic semiconductor by microwave-dependent magnetic measurements remains limited. Herein, we report the impact of an organic layer on the dynamic magnetic behavior of nickel/rubrene bilayers deposited on a Si(100) substrate. From magnetic dynamic measurements, opposite signs of effective magnetic fields between the in-plane (IP) and out-of-plane (OP) configurations suggest that the magnetization of Ni(x)/rubrene/Si prefers to coexist. A shift in OP resonance fields to higher values can mainly be attributed to the enhanced second-order anisotropy parameter K2 value. Based on IP measurements, a two-magnon scattering mechanism is dominant for thin Ni(x)/rubrene/Si bilayers. By adding a rubrene layer, the highly stable IP combined with the tunable OP ferromagnetic resonance spectra for Ni(x)/rubrene/Si bilayers make them promising materials for use in microwave magnetic devices and spintronics with controllable perpendicular magnetic anisotropy.
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Affiliation(s)
| | - Jian-Chen Tsai
- Department of Physics, National Taiwan Normal University, Taipei, 116, Taiwan.
| | - You-Siang Li
- Department of Physics, National Taiwan Normal University, Taipei, 116, Taiwan.
| | - Jyh-Shen Tsay
- Department of Physics, National Taiwan Normal University, Taipei, 116, Taiwan.
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4
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Yan X, Su X, Chen J, Jin C, Chen L. Two-Dimensional Metal-Organic Frameworks Towards Spintronics. Angew Chem Int Ed Engl 2023; 62:e202305408. [PMID: 37258996 DOI: 10.1002/anie.202305408] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Revised: 05/27/2023] [Accepted: 05/30/2023] [Indexed: 06/02/2023]
Abstract
The intrinsic properties of predesignable topologies and tunable electronic structures, coupled with the increase of electrical conductivity, make two-dimensional metal-organic frameworks (2D MOFs) highly prospective candidates for next-generation electronic/spintronic devices. In this Minireview, we present an outline of the design principles of 2D MOF-based spintronics materials. Then, we highlight the spin-transport properties of 2D MOF-based organic spin valves (OSVs) as a notable achievement in the progress of 2D MOFs for spintronics devices. After that, we discuss the potential for spin manipulation in 2D MOFs with bipolar magnetic semiconductor (BMS) properties as a promising field for future research. Finally, we provide a brief summary and outlook to encourage the development of novel 2D MOFs for spintronics applications.
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Affiliation(s)
- Xiaoli Yan
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Xi Su
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Jian Chen
- Key Laboratory of Theoretical Organic Chemistry and Functional Molecule of Ministry of Education, Hunan Provincial Key Laboratory of Controllable Preparation and Functional Application of Fine Polymers, School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan, 411201, China
| | - Chao Jin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Department of Applied Physics, School of Sciences, Tianjin University, Tianjin, 300350, China
| | - Long Chen
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
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5
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Zheng N, Liu H, Zeng YJ. Dynamical Behavior of Pure Spin Current in Organic Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207506. [PMID: 36995070 DOI: 10.1002/advs.202207506] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 02/27/2023] [Indexed: 06/04/2023]
Abstract
Growing concentration on the novel information processing technology and low-cost, flexible materials make the spintronics and organic materials appealing for the future interdisciplinary investigations. Organic spintronics, in this context, has arisen and witnessed great advances during the past two decades owing to the continuous innovative exploitation of the charge-contained spin polarized current. Albeit with such inspiring facts, charge-absent spin angular momentum flow, namely pure spin currents (PSCs) are less probed in organic functional solids. In this review, the past exploring journey of PSC phenomenon in organic materials are retrospected, including non-magnetic semiconductors and molecular magnets. Starting with the basic concepts and the generation mechanism for PSC, the representative experimental observations of PSC in the organic-based networks are subsequently demonstrated and summarized, by accompanying explicit discussion over the propagating mechanism of net spin itself in the organic media. Finally, future perspectives on PSC in organic materials are illustrated mainly from the material point of view, including single molecule magnets, complexes for the organic ligands framework as well as the lanthanide metal complexes, organic radicals, and the emerging 2D organic magnets.
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Affiliation(s)
- Naihang Zheng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology in Shenzhen, 518055, Shenzhen, P. R. China
| | - Haoliang Liu
- Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology in Shenzhen, 518055, Shenzhen, P. R. China
| | - Yu-Jia Zeng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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6
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Tanguturi RG, Tsai JC, Li YS, Tsay JS. Structural characterization and electronic properties of Ni/rubrene bilayers with alternative stacking sequences. Phys Chem Chem Phys 2023; 25:7927-7936. [PMID: 36861757 DOI: 10.1039/d3cp00297g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/18/2023]
Abstract
Recent progress in organic electronics has attracted interest due to their excellent characteristics that include photovoltaic, light emission, and semiconducting behaviours. Spin-induced properties play important roles in organic electronics, while introducing spin into an organic layer in which spin responses, such as a weak spin-orbital coupling and long spin-relaxation time, allows a variety of spintronic applications to be achieved. However, such spin responses are rapidly attenuated by misalignment in the electronic structure of hybrid structures. We report herein on the energy level diagrams of Ni/rubrene bilayers that can be tuned by an alternating stacking. The band edges of the highest occupied molecular orbital (HOMO) levels were determined to be 1.24 and 0.48 eV relative to the Fermi level for Ni/rubrene/Si and rubrene/Ni/Si bilayers, respectively. This raises a possibility of accumulating electric dipoles at the ferromagnetic/organic semiconductor (FM/OSC) interface, which would inhibit the transfer of spin in the OSC layer. This phenomenon is caused by the formation of a Schottky-like barrier in the rubrene/Ni heterostructures. According to the information about the band edges of the HOMO levels, schematic plots of the HOMO shift in the electronic structure of the bilayers are presented. Based on the lower value of the effective uniaxial anisotropy for Ni/rubrene/Si, the uniaxial anisotropy was suppressed compared to that of rubrene/Ni/Si. The characteristics of the formation of Schottky barriers at the FM/OSC interface have an impact on the temperature-dependent spin states in the bilayers.
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Affiliation(s)
| | - Jian-Chen Tsai
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - You-Siang Li
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Jyh-Shen Tsay
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
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7
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Zhang Y, Wang Y, Gao C, Ni Z, Zhang X, Hu W, Dong H. Recent advances in n-type and ambipolar organic semiconductors and their multi-functional applications. Chem Soc Rev 2023; 52:1331-1381. [PMID: 36723084 DOI: 10.1039/d2cs00720g] [Citation(s) in RCA: 32] [Impact Index Per Article: 32.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Abstract
Organic semiconductors have received broad attention and research interest due to their unique integration of semiconducting properties with structural tunability, intrinsic flexibiltiy and low cost. In order to meet the requirements of organic electronic devices and their integrated circuits, p-type, n-type and ambipolar organic semiconductors are all necessary. However, due to the limitation in both material synthesis and device fabrication, the development of n-type and ambipolar materials is quite behind that of p-type materials. Recent development in synthetic methods of organic semiconductors greatly enriches the range of n-type and ambipolar materials. Moreover, the newly developed materials with multiple functions also put forward multi-functional device applications, including some emerging research areas. In this review, we give a timely summary on these impressive advances in n-type and ambipolar organic semiconductors with a special focus on their synthesis methods and advanced materials with enhanced properties of charge carrier mobility, integration of high mobility and strong emission and thermoelectric properties. Finally, multi-functional device applications are further demonstrated as an example of these developed n-type and ambipolar materials.
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Affiliation(s)
- Yihan Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. .,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongshuai Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. .,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Gao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
| | - Zhenjie Ni
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaotao Zhang
- Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China.,Department of Functional Materials, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China.,Joint School of National University of Singapore and Tianjin University, Fuzhou International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. .,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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8
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Pawar S, Duadi H, Fixler D. Recent Advances in the Spintronic Application of Carbon-Based Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:598. [PMID: 36770559 PMCID: PMC9919822 DOI: 10.3390/nano13030598] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 01/29/2023] [Accepted: 01/30/2023] [Indexed: 06/18/2023]
Abstract
The term "carbon-based spintronics" mostly refers to the spin applications in carbon materials such as graphene, fullerene, carbon nitride, and carbon nanotubes. Carbon-based spintronics and their devices have undergone extraordinary development recently. The causes of spin relaxation and the characteristics of spin transport in carbon materials, namely for graphene and carbon nanotubes, have been the subject of several theoretical and experimental studies. This article gives a summary of the present state of research and technological advancements for spintronic applications in carbon-based materials. We discuss the benefits and challenges of several spin-enabled, carbon-based applications. The advantages include the fact that they are significantly less volatile than charge-based electronics. The challenge is in being able to scale up to mass production.
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Affiliation(s)
- Shweta Pawar
- Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan 5290002, Israel
- Bar-Ilan Institute of Nanotechnology & Advanced Materials (BINA), Bar Ilan University, Ramat Gan 5290002, Israel
| | - Hamootal Duadi
- Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan 5290002, Israel
| | - Dror Fixler
- Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan 5290002, Israel
- Bar-Ilan Institute of Nanotechnology & Advanced Materials (BINA), Bar Ilan University, Ramat Gan 5290002, Israel
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9
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Ran Y, Yu J, Cao F, Yu J, Bu L, Lu G. In situ infrared spectroscopy depth profilometer for organic thin films. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2022; 93:113901. [PMID: 36461549 DOI: 10.1063/5.0098346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Accepted: 09/28/2022] [Indexed: 06/17/2023]
Abstract
Organic films are widely used in organic optoelectronics due to their flexibility, low-cost fabrication, and ability to be processed over large areas. Typically, the composition of these thin films varies along the film depth direction. In this work, we present a home-developed in situ instrument comprised of a capacitive coupled plasma generator in combination with a Fourier transform infrared spectrometer, to measure the composition distribution along the film-normal direction. During the measurement, the film is sequentially etched by the soft plasma and the evolution of the infrared spectra of the film is in situ monitored by a spectrometer, from which the film-depth-dependent infrared spectra are extracted. The film-depth resolution of this analytical method has been improved to ∼1 nanometer. Thus, it is possible to calculate the composition that varies with depth by utilizing this analysis method. This equipment, which can be applied effectively to the characterization of thin films for both conjugated and unconjugated organic molecules by directly measuring their distinctive molecular vibration signatures, is simple and clear to set up in a large number of laboratories.
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Affiliation(s)
- Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, China
| | - Jinde Yu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, China
| | - Fan Cao
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, China
| | - Jifa Yu
- Shaanxi Puguang Weishi Co. Ltd., Xi'an 710100, China
| | - Laju Bu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, China
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10
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Cheng Y, Dong G, Li Y, Yang G, Zhang B, Guan M, Zhou Z, Liu M. Strain Modulation of Perpendicular Magnetic Anisotropy in Wrinkle-Patterned (Co/Pt) 5/BaTiO 3 Magnetoelectric Heterostructures. ACS NANO 2022; 16:11291-11299. [PMID: 35848713 DOI: 10.1021/acsnano.2c04754] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The rapid development of spintronics requires the devices to be flexible, to be used in wearable electronics, and controllable, to be used with magnetoelectric (ME) structures. However, the clamping effect inevitably leads to a decreased ME effect on the rigid substrate, and it remains challenging to directly prepare high-quality ferroelectric (FE) membranes on the widely used flexible substrate such as MICA or polyimide (PI). Here, periodic wrinkle-patterned flexible (Co/Pt)5/BaTiO3 (BTO) perpendicular magnetic anisotropy (PMA) heterostructures were prepared using the water-soluble method. The high-quality single-crystal BTO membrane ensures that intricate wrinkles do not fracture and a high ME coefficient is achievable. The transferred sample that is released from the clamping effect shows an enhanced ME effect in both in-plane and out-of-plane directions, with the ME coefficient reaching up to 68 Oe °C-1. The ferromagnetic resonance (FMR) field of the flexible sample can be tuned by tensile strain up to 272 Oe. The finely controlled wrinkle shows periodic strain variations at peak and valley regions that switch the PMA magnetic domain motion as an effective control method. The proposed ultraflexible wrinkle sample shows great potential for combining multiple magnetization tuning approaches, allowing it to potentially serve as a tunable high-density 3D storage prototype.
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Affiliation(s)
- Yuxin Cheng
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Guohua Dong
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yaojin Li
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Guannan Yang
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Butong Zhang
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Mengmeng Guan
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ziyao Zhou
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ming Liu
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
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11
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Knepp ZJ, Fredin LA. Real Temperature Model of Dynamic Disorder in Molecular Crystals. J Phys Chem A 2022; 126:3265-3272. [PMID: 35561418 DOI: 10.1021/acs.jpca.2c02120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Charge carrier mobilities in ordered organic semiconductors are limited by inherent vibrational phonons that scatter carriers. To improve a material's intrinsic mobility, restricting particularly detrimental modes with molecular substitutions may be a viable strategy. Here, we develop a probabilistic temperature-dependent displacement model that we couple with the density functional dimer projection protocol to predict effective electronic coupling fluctuations. The phonon-induced deviations from the equilibrium electronic couplings are used to infer the detriment of low-frequency phonons on charge carrier mobilities in a set of organic single crystals. We show that asymmetric sliding motions in pentacene and 2,6-diphenylanthracene induce large electronic coupling fluctuations, whereas seesawlike motions cause large fluctuations in rubrene, 9,10-diphenylanthracene, and, 2,6-diphenylanthracene. Vibrational analyses revealed that the asymmetric sliding phonon in rubrene persists only in the low-mobility direction of the crystal. Therefore, rubrene's intrinsic high mobility is likely due to the absence of this source of disorder in its high-mobility conduction channels. This model can be used to identify particularly harmful or helpful phonons in crystalline materials and may provide design rules for developing materials with intrinsically low disorder.
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Affiliation(s)
- Zachary J Knepp
- Department of Chemistry, Lehigh University, 6 E. Packer Avenue, Bethlehem, Pennsylvania 18015, United States
| | - Lisa A Fredin
- Department of Chemistry, Lehigh University, 6 E. Packer Avenue, Bethlehem, Pennsylvania 18015, United States
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12
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Doroftei C, Carlescu A, Leontie L, Danac R, Al-Matarneh CM. Structural, Electrical and Optical Properties of Pyrrolo[1,2- i][1,7] Phenanthroline-Based Organic Semiconductors. MATERIALS 2022; 15:ma15051684. [PMID: 35268915 PMCID: PMC8911188 DOI: 10.3390/ma15051684] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Revised: 02/17/2022] [Accepted: 02/21/2022] [Indexed: 02/05/2023]
Abstract
This work reports a study on structural, electrical and optical properties of some recently synthesized pyrrolo[1,2-i][1,7] phenanthrolines derivatives in thin films. The thin films were deposited onto glass substrates by spin coating technique, using chloroform as solvent. The obtained films exhibited a polycrystalline structure with an n–type semiconductor behavior after heat treatment in the temperature range 293–543 K, specific to each sample. The thermal activation energy lies between 0.68 and 0.78 eV, while the direct optical band gap values were found in the range 4.17–4.24 eV. The electrical and optical properties of the investigated organic semiconductor films were discussed in relation to microstructural properties, determined by the molecular structure. The investigated organic compounds are promising for applications in organic optoelectronics and nanoelectronics.
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Affiliation(s)
- Corneliu Doroftei
- Research Center in Environmental Sciences for the North-Eastern Romanian Region (CERNESIM), Science Research Department, Institute of Interdisciplinary Research, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi, Romania; (C.D.); (L.L.)
| | - Aurelian Carlescu
- Research Center in Environmental Sciences for the North-Eastern Romanian Region (CERNESIM), Science Research Department, Institute of Interdisciplinary Research, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi, Romania; (C.D.); (L.L.)
- Correspondence:
| | - Liviu Leontie
- Research Center in Environmental Sciences for the North-Eastern Romanian Region (CERNESIM), Science Research Department, Institute of Interdisciplinary Research, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi, Romania; (C.D.); (L.L.)
- Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi, Romania
| | - Ramona Danac
- Faculty of Chemistry, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi, Romania; (R.D.); (C.M.A.-M.)
| | - Cristina Maria Al-Matarneh
- Faculty of Chemistry, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi, Romania; (R.D.); (C.M.A.-M.)
- Institute of Macromolecular Chemistry “Petru Poni”, Aleea Ghica Voda, No. 41A, 700487 Iasi, Romania
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13
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Park S, Ryu S, Ho D, Chae W, Earmme T, Kim C, Seo S. Novel benzo[ b]thieno[2,3- d]thiophene derivatives with an additional alkyl-thiophene core: synthesis, characterization, and p-type thin film transistor performance. NEW J CHEM 2022. [DOI: 10.1039/d2nj01635d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Newly synthesized benzo[b]thieno[2,3-d]thiophene derivatives were employed as active layers of organic field effect transistors, and these transistors showed decent electrical performance.
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Affiliation(s)
- Soyoon Park
- Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul 04107, Korea
| | - Soomin Ryu
- Department of Smart Green Technology Engineering, Pukyong National University, Busan 48513, Korea
| | - Dongil Ho
- Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul 04107, Korea
| | - Wookil Chae
- Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Taeshik Earmme
- Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Choongik Kim
- Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul 04107, Korea
| | - SungYong Seo
- Department of Smart Green Technology Engineering, Pukyong National University, Busan 48513, Korea
- Department of Chemistry, Pukyong National University, Busan 48513, Korea
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14
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Rahman MW, Mañas-Torres MC, Firouzeh S, Cuerva JM, Álvarez de Cienfuegos L, Pramanik S. Molecular Functionalization and Emergence of Long-Range Spin-Dependent Phenomena in Two-Dimensional Carbon Nanotube Networks. ACS NANO 2021; 15:20056-20066. [PMID: 34870421 DOI: 10.1021/acsnano.1c07739] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Molecular functionalization of CNTs is a routine procedure in the field of nanotechnology. However, whether and how these molecules affect the spin polarization of the charge carriers in CNTs are largely unknown. In this work we demonstrate that spin polarization can indeed be induced in two-dimensional (2D) CNT networks by "certain" molecules and the spin signal routinely survives length scales significantly exceeding 1 μm. This result effectively connects the area of molecular spintronics with that of carbon-based 2D nanoelectronics. By using the versatility of peptide chemistry, we further demonstrate how spin polarization depends on molecular structural features such as chirality as well as molecule-nanotube interactions. A chirality-independent effect was detected in addition to the more common chirality-dependent effect, and the overall spin signal was found to be a combination of both. Finally, the magnetic field dependence of the spin signals has been explored, and the "chirality-dependent" signal has been found to exist only in certain field angles.
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Affiliation(s)
- Md Wazedur Rahman
- Department of Electrical and Computer Engineering, University of Alberta, Alberta T6G 1H9, Canada
| | - Mari C Mañas-Torres
- Departamento de Química Orgánica, Facultad de Ciencias, Unidad de Excelencia de Química Aplicada a Biomedicina y Medioambiente (UEQ), Universidad de Granada, 18071 Granada, Spain
| | - Seyedamin Firouzeh
- Department of Electrical and Computer Engineering, University of Alberta, Alberta T6G 1H9, Canada
| | - Juan Manuel Cuerva
- Departamento de Química Orgánica, Facultad de Ciencias, Unidad de Excelencia de Química Aplicada a Biomedicina y Medioambiente (UEQ), Universidad de Granada, 18071 Granada, Spain
| | - Luis Álvarez de Cienfuegos
- Departamento de Química Orgánica, Facultad de Ciencias, Unidad de Excelencia de Química Aplicada a Biomedicina y Medioambiente (UEQ), Universidad de Granada, 18071 Granada, Spain
| | - Sandipan Pramanik
- Department of Electrical and Computer Engineering, University of Alberta, Alberta T6G 1H9, Canada
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15
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Borovkov VI. Probing an Isolated Conjugated Polymer Molecule with Radiation-Generated Spin-Correlated Polaron Pairs. J Phys Chem Lett 2021; 12:8548-8553. [PMID: 34464139 DOI: 10.1021/acs.jpclett.1c02657] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
An understanding of the interplay between the spin and electronic degrees of freedom of polarons migrating along conjugated polymer molecules is required to further the development of organic electronics and spintronics. In this study, a novel experimental approach is proposed for studying spin-correlated polaron pairs (PPs) on an isolated molecule of a conjugated polymer. The polymer molecule of interest is immobilized in a nonluminescent poly(vinyl chloride) matrix, which is irradiated with X-rays to rapidly form secondary PPs on the conjugated polymer. The migration, recombination, and evolution of the spin state of the PPs can be monitored at nanosecond resolution by observing the recombination fluorescence under different magnetic fields. Examples supporting this concept are presented.
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Affiliation(s)
- Vsevolod I Borovkov
- Voevodsky Institute of Chemical Kinetics and Combustion, Siberian Branch of the Russian Academy of Science, 3, Institutskaya st., Novosibirsk 630090, Russia
- Novosibirsk State University, 2 Pirogova st., Novosibirsk 630090, Russia
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16
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Rahman MW, Firouzeh S, Pramanik S. Carrier localization and magnetoresistance in DNA-functionalized carbon nanotubes. NANOTECHNOLOGY 2021; 32:455001. [PMID: 34325416 DOI: 10.1088/1361-6528/ac18d9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2021] [Accepted: 07/26/2021] [Indexed: 06/13/2023]
Abstract
Helical functionalization of carbon nanotubes using DNA strands can polarize carrier spins through chirality induced spin selectivity (or CISS) effect. Detection of this effect using transport experiments unravels an underlying magnetoresistance effect, origin of which is not well understood. In the present study, we investigate this effect, a fundamental understanding of which is crucial for the potential use of this system in spintronic devices. The conduction mechanism has been found to be in the strongly localized regime due to DNA functionalization, with the observed magnetoresistance originating from the interference effects between the forward and backward hopping paths. CISS-induced spin polarization has been estimated to increase the carrier localization length by an order of magnitude in the low temperature range and it affects the magnetoresistance effect in a non-trivial way that is not observed in conventional systems.
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Affiliation(s)
- Md Wazedur Rahman
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada
| | - Seyedamin Firouzeh
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada
| | - Sandipan Pramanik
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada
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